JPH07249654A - Semiconductor device and its packaging method - Google Patents
Semiconductor device and its packaging methodInfo
- Publication number
- JPH07249654A JPH07249654A JP6067719A JP6771994A JPH07249654A JP H07249654 A JPH07249654 A JP H07249654A JP 6067719 A JP6067719 A JP 6067719A JP 6771994 A JP6771994 A JP 6771994A JP H07249654 A JPH07249654 A JP H07249654A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- substrate
- base material
- lead
- mounting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3421—Leaded components
Landscapes
- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、フィルムキャリアに半
導体チップを搭載してなる半導体装置、及びこの半導体
装置を基板に実装するための方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a semiconductor chip mounted on a film carrier and a method for mounting the semiconductor device on a substrate.
【０００２】[0002]
【従来の技術】従来、フィルムキャリアに半導体チップ
を搭載したＴＡＢ（Tape Automated Bonding）方式の半
導体装置においては、フィルムキャリアのフィルム基材
上に形成された複数のリードの一端と半導体チップの電
極とを接続し、この後、各リードの他端を基板の外部電
極に接続している。このような従来のＴＡＢ方式半導体
装置においては、通常、各リードの他端が何ら保持され
ていないので、これら各リードの他端に乱列（様々な方
向へのリードのバタツキまたはバラケ）が生じ易かっ
た。2. Description of the Related Art Conventionally, in a TAB (Tape Automated Bonding) type semiconductor device in which a semiconductor chip is mounted on a film carrier, one end of a plurality of leads formed on a film base material of the film carrier and electrodes of the semiconductor chip are formed. , And then the other end of each lead is connected to the external electrode of the substrate. In such a conventional TAB semiconductor device, the other end of each lead is not normally held at all, so that a random array (fluttering or variation of the lead in various directions) occurs at the other end of each lead. It was easy.
【０００３】上記問題の対策として、特公昭６１−５９
５５６号公報に記載された技術がある。即ち、図１１に
示すように、フィルムキャリア１のフィルム基材２上に
形成された複数のリード３の一端３ａはデバイス孔４内
に位置させるが、各リード３の他端３ｂはフィルム基材
２に保持させた状態とし、リード孔５に位置する各リー
ド３の部分を接合部３ｃとするものである。そして、図
１２に示すように、各リード３の一端３ａに半導体チッ
プ６を接続した後、ボンディングツール７によって各リ
ード３の接合部３ｃを基板８の外部電極９に熱圧着方式
で接続するものである。As a measure against the above problem, Japanese Patent Publication No. 61-59
There is a technology described in Japanese Patent No. 556. That is, as shown in FIG. 11, one end 3 a of the plurality of leads 3 formed on the film base material 2 of the film carrier 1 is located in the device hole 4, but the other end 3 b of each lead 3 is formed on the film base material 2. 2, the portion of each lead 3 located in the lead hole 5 is used as the joint portion 3c. Then, as shown in FIG. 12, after connecting the semiconductor chip 6 to one end 3a of each lead 3, the bonding portion 3c of each lead 3 is connected to the external electrode 9 of the substrate 8 by the thermocompression bonding method by the bonding tool 7. Is.
【０００４】[0004]
【発明が解決しようとする課題】上記従来例によれば、
各リード３の他端３ｂがフィルム基材２により保持され
ているので、各リード３の他端３ｂの乱列を防止するこ
とができる。しかしながら、基板８の外部電極９に対し
て実際に接続される各リード３の接合部３ｃは、フィル
ム基材２に保持された他端３ｂよりも内側で大きなリー
ド孔５内に位置しているので、これら各リード３の接合
部３ｃの乱列を完全に無くすことはできないという問題
があった。そして、フィルム基材２は薄く柔軟で各リー
ド３も微細なので、特に近年のＴＡＢ方式半導体装置の
ように各リード３の高密度・狭ピッチ化が進むと、各リ
ード３の接合部３ｃの僅かな乱列によっても、接合部３
ｃ間の短絡が生じたり外部電極９に対する位置ズレが生
じたりする虞れがあった。According to the above conventional example,
Since the other end 3b of each lead 3 is held by the film base material 2, disordering of the other end 3b of each lead 3 can be prevented. However, the joint portion 3c of each lead 3 that is actually connected to the external electrode 9 of the substrate 8 is located inside the larger lead hole 5 inside the other end 3b held by the film base material 2. Therefore, there is a problem that it is not possible to completely eliminate the disordered arrangement of the joint portions 3c of the leads 3. Since the film base material 2 is thin and flexible and each lead 3 is fine, especially when the density and pitch of each lead 3 are made narrower as in the recent TAB semiconductor device, the bonding portion 3c of each lead 3 is slightly reduced. Even if there is a random disorder, the joint 3
There is a risk that a short circuit may occur between c and a position shift with respect to the external electrode 9.
【０００５】そこで本発明は、フィルムキャリアに半導
体チップを搭載した半導体装置において、複数のリード
の接合部の乱列を完全に防止できるようにすることを目
的とする。Therefore, it is an object of the present invention to completely prevent a disordered arrangement of joints of a plurality of leads in a semiconductor device having a semiconductor chip mounted on a film carrier.
【０００６】また本発明は、フィルムキャリアに半導体
チップを搭載した半導体装置を基板に実装する際、複数
のリードの接合部を高精度かつ安定して基板に接続でき
るようにすることを目的とする。Another object of the present invention is to enable a joint portion of a plurality of leads to be accurately and stably connected to a substrate when a semiconductor device having a semiconductor chip mounted on a film carrier is mounted on the substrate. .
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
に、本発明は、フィルム基材上に複数のリードを形成し
たフィルムキャリアに半導体チップを搭載してなる半導
体装置において、前記複数のリードの先端部分を支持す
るフィルム基材に、前記各リードの接合部が局所的に露
出するスリット状の開孔部を設けたものである。In order to achieve the above object, the present invention provides a semiconductor device in which a semiconductor chip is mounted on a film carrier having a plurality of leads formed on a film substrate. In the film base material supporting the tip portion of the above, a slit-shaped opening for locally exposing the joint portion of each lead is provided.
【０００８】また、本発明は、前記半導体装置を基板に
実装するための方法であって、前記フィルム基材の開孔
部内にレーザを照射して、前記各リードの接合部を前記
基板の外部電極に接続するものである。Further, the present invention is a method for mounting the semiconductor device on a substrate, wherein a laser is applied to the inside of the opening of the film base material so that the joint portion of each lead is outside the substrate. It is connected to the electrodes.
【０００９】また、本発明は、前記半導体装置を基板に
実装するための方法であって、前記フィルム基材の開孔
部内にボンディングツールを挿入して、前記各リードの
接合部を前記基板の外部電極に熱圧着して接続するもの
である。Further, the present invention is a method for mounting the semiconductor device on a substrate, wherein a bonding tool is inserted into the opening of the film base material so that the bonding portion of each lead is connected to the substrate. It is connected by thermocompression bonding to the external electrode.
【００１０】なお、前記半導体装置の実装方法におい
て、前記フィルム基材の開孔部と同形状のスリット状の
透孔部を有する押え治具を、その透孔部が前記開孔部と
一致するように載置するとよい。In the method of mounting the semiconductor device, a holding jig having a slit-shaped through hole portion having the same shape as the open hole portion of the film base material, the through hole portion being in agreement with the open hole portion. It is good to put it like this.
【００１１】また、本発明は、前記半導体装置を基板に
実装するための方法であって、前記フィルム基材の開孔
部内にレーザ透過部材を載置し、このレーザ透過部材に
レーザを照射して、前記各リードの接合部を前記基板の
外部電極に接続するものである。Further, the present invention is a method for mounting the semiconductor device on a substrate, wherein a laser transmitting member is placed in the opening of the film base material, and the laser transmitting member is irradiated with a laser. Then, the joint portion of each lead is connected to the external electrode of the substrate.
【００１２】また、本発明は、前記半導体装置を基板に
実装するための方法であって、前記フィルム基材の開孔
部の周囲を加熱して、前記フィルム基材の下側で前記各
リードを前記基板の外部電極に接続するものである。Further, the present invention is a method for mounting the semiconductor device on a substrate, wherein the periphery of the opening of the film base material is heated so that each of the leads under the film base material is heated. Is connected to an external electrode of the substrate.
【００１３】[0013]
【作用】本発明の半導体装置によれば、複数のリードの
先端部分を支持するフィルム基材にスリット状の開孔部
が設けられ、この開孔部に局所的に露出する各リードの
部分が接合部となるので、これら各リードの乱列が完全
に防止される。According to the semiconductor device of the present invention, the film base material supporting the tip portions of the plurality of leads is provided with the slit-shaped openings, and the portions of the leads locally exposed to the openings are provided. Since it becomes a joint, the disordered arrangement of these leads is completely prevented.
【００１４】また、本発明の半導体装置の実装方法によ
れば、複数のリードの先端部分を支持するフィルム基材
の開孔部内に、レーザを照射またはボンディングツール
を挿入することによって、各リードの接合部に乱列がな
い状態で、これら各リードの接合部が基板の外部電極に
高精度かつ安定に接続される。Further, according to the semiconductor device mounting method of the present invention, laser irradiation or a bonding tool is inserted into the openings of the film base material supporting the tip portions of the plurality of leads, so that the leads are separated from each other. The joint portion of each of these leads is connected to the external electrode of the substrate with high precision and stability in a state where there is no disorder in the joint portion.
【００１５】[0015]
【実施例】以下、本発明による半導体装置及びその実装
方法の実施例について図１〜図１０を参照して説明す
る。Embodiments of the semiconductor device and its mounting method according to the present invention will be described below with reference to FIGS.
【００１６】まず、図２は本実施例の半導体装置を構成
するフィルムキャリアの平面図である。長尺テープ状を
なすフィルムキャリア１１は、ポリイミド等からなる絶
縁性のフィルム基材１２と、このフィルム基材１２上に
銅箔等によりパターン形成された複数の導電性のリード
１３とによって構成されている。フィルム基材１２には
デバイス孔１４が形成され、フィルム基材１２のサポー
ト部１２ａ上に支持された各リード１３のインナーリー
ド１３ａがデバイス孔１４内に突出している。そして、
各リード１３のアウターリード１３ｂの先端部分はフィ
ルム基材１２の外枠部１２ｂに支持されている。なお、
１５はフィルム基材１２に形成されたスプロケット孔で
ある。First, FIG. 2 is a plan view of a film carrier constituting the semiconductor device of this embodiment. The long tape-shaped film carrier 11 is composed of an insulating film base material 12 made of polyimide or the like and a plurality of conductive leads 13 patterned on the film base material 12 with a copper foil or the like. ing. Device holes 14 are formed in the film substrate 12, and inner leads 13 a of the leads 13 supported on the support portion 12 a of the film substrate 12 project into the device holes 14. And
The tip portion of the outer lead 13b of each lead 13 is supported by the outer frame portion 12b of the film base material 12. In addition,
Reference numeral 15 is a sprocket hole formed in the film substrate 12.
【００１７】上記のフィルム基材１２において、外枠部
１２ｂにはスリット状の開孔部１６が環状に形成されて
おり、この開孔部１６内に局所的に露出する各アウター
リード１３ｂの部分が接合部１３ｃとなっている。この
開孔部１６の幅は、後述のレーザ照射或いは熱圧着ツー
ルにも関係するが、１００〜３００μｍ程度の細さ、或
いはこれよりも細くすることが好ましく、このように細
い幅の開孔部１６を有することが大きな特徴である。In the film base material 12, the outer frame portion 12b is formed with a slit-shaped opening portion 16 in an annular shape, and a portion of each outer lead 13b locally exposed in the opening portion 16 is formed. Is the joint 13c. The width of the opening 16 is related to a laser irradiation or a thermocompression bonding tool which will be described later, but it is preferable that the width of the opening 16 is about 100 to 300 μm or thinner. Having 16 is a major feature.
【００１８】そして、デバイス孔１４内において各イン
ナーリード１３ａと半導体チップ１７の電極とが接合さ
れ、外枠部１２ｂの開孔部１６の外側近傍（図２の鎖線
部分）で切断されることによって、図３に示す半導体装
置が得られる。従って、この状態では、フィルム基材１
２のリング状をなす外枠部１２ｂが各アウターリード１
３ｂの先端部分を保持する保持部となり、この保持部１
２ｂが開孔部１６を有することになる。ところで、図２
及び図３に示す例では、保持部１２ｂの開孔部１６を環
状に連続して形成したが、図１に示すように、保持部１
２ｂの各辺にそれぞれ開孔部１６を形成してもよい。な
お、図１及び図３では半導体チップ１７が樹脂モールド
１８により封止されている。Then, the inner leads 13a are bonded to the electrodes of the semiconductor chip 17 in the device hole 14, and the inner lead 13a is cut in the vicinity of the outside of the opening 16 of the outer frame 12b (indicated by a chain line in FIG. 2). The semiconductor device shown in FIG. 3 is obtained. Therefore, in this state, the film substrate 1
The outer frame portion 12b in the shape of a ring 2 has outer leads 1
The holding portion 1 holds the tip portion of 3b.
2b will have an aperture 16. By the way,
In the example shown in FIG. 3 and FIG. 3, the opening portion 16 of the holding portion 12b is continuously formed in an annular shape, but as shown in FIG.
The openings 16 may be formed on each side of 2b. 1 and 3, the semiconductor chip 17 is sealed by the resin mold 18.
【００１９】このように、本実施例の半導体装置におい
ては、各アウターリード１３ｂの先端部分を保持するフ
ィルム基材１２の保持部１２ｂに、細いスリット状の開
孔部１６が形成されており、この開孔部１６内に局所的
に露出する各アウターリード１３ｂの部分が接合部１３
ｃとなっている。これによって、薄く柔軟なフィルム基
材１２に微細なリード１３を形成したものであっても、
各アウターリード１３ｂの接合部１３ｃに乱列が生じる
ことは全くない。As described above, in the semiconductor device according to the present embodiment, the thin slit-shaped opening portion 16 is formed in the holding portion 12b of the film base material 12 that holds the tip portion of each outer lead 13b, The portion of each outer lead 13b that is locally exposed in the opening 16 is the joint portion 13.
It is c. As a result, even if the fine leads 13 are formed on the thin and flexible film substrate 12,
No random rows occur at the joint portion 13c of each outer lead 13b.
【００２０】次に、上述のように構成された半導体装置
を回路基板に実装する方法について説明する。まず、図
４においては、開孔部１６で各アウターリード１３ｂの
接合部１３ｃと回路基板２０の外部電極２１との位置合
わせを行い、開孔部１６内にレーザ２２を照射して、接
合部１３ｃを外部電極２１に接続する。なお、２３はハ
ンダである。Next, a method of mounting the semiconductor device configured as described above on a circuit board will be described. First, in FIG. 4, the joint portion 13c of each outer lead 13b and the external electrode 21 of the circuit board 20 are aligned with each other in the opening portion 16, and the laser beam 22 is irradiated into the opening portion 16 to form the joint portion. 13c is connected to the external electrode 21. In addition, 23 is solder.
【００２１】また、図５においては、上述と同様に、開
孔部１６で各アウターリード１３ｂの接合部１３ｃと回
路基板２０の外部電極２１との位置合わせを行い、開孔
部１６内にボンディングツール２４を挿入し、接合部１
３ｃを加熱加圧して外部電極２１に熱圧着により接続す
る。Further, in FIG. 5, similarly to the above, the joint portion 13c of each outer lead 13b and the external electrode 21 of the circuit board 20 are aligned in the opening portion 16 and the bonding is performed in the opening portion 16. Insert tool 24 and join 1
3c is heated and pressed to be connected to the external electrode 21 by thermocompression bonding.
【００２２】このように、細いスリット状の開孔部１６
内にレーザ２２を照射またはボンディングツール２４を
挿入することによって、各アウターリード１３ｂの接合
部１３ｃに乱列がない状態で、これら接合部１３ｃを外
部電極２１に高精度かつ安定に接続することができる。
特に、レーザ２２を照射する場合には、開孔部１６の幅
を５０μｍ程度にまで細くすることができ、さらにレー
ザ２２のスポット径や照***度等を改良することでもっ
と細くすることができるので、接合部１３ｃの乱列防止
がより効果的である。As described above, the thin slit-shaped opening portion 16 is formed.
By irradiating the laser 22 or inserting the bonding tool 24 therein, these joints 13c can be connected to the external electrodes 21 with high accuracy and stability without any irregularity in the joints 13c of each outer lead 13b. it can.
In particular, when irradiating with the laser 22, the width of the aperture 16 can be reduced to about 50 μm, and further improved by improving the spot diameter of the laser 22, the irradiation accuracy, and the like. , It is more effective to prevent the disorder of the joint portion 13c.
【００２３】次に、図６においては、フィルム基材１２
の保持部１２ｂ上に、この保持部１２ｂの開孔部１６と
同形状のスリット状の透孔部２６を有する押え治具２５
を、その透孔部２６が開孔部１６と一致するように載置
する。なお、押え治具２５はガラスまたは水晶レンズ等
からなる。そして、図７に示すように、押え治具２５で
開孔部１６の周囲の保持部１２ｂを固定し、押え治具２
５の透孔部２６内にレーザ２２を照射して、接合部１３
ｃを外部電極２１に接続する。Next, referring to FIG. 6, the film substrate 12
A holding jig 25 having a slit-shaped through hole portion 26 having the same shape as the opening portion 16 of the holding portion 12b on the holding portion 12b.
Are placed so that the through holes 26 are aligned with the openings 16. The holding jig 25 is made of glass or a crystal lens. Then, as shown in FIG. 7, the holding portion 12b around the opening portion 16 is fixed by the holding jig 25, and the holding jig 2 is held.
The laser 22 is radiated into the through hole portion 26 of
c is connected to the external electrode 21.
【００２４】また、図８においては、上述と同様に押え
治具２５で開孔部１６の周囲の保持部１２ｂを固定し、
押え治具２５の透孔部２６内にボンディングツール２４
を挿入し、接合部１３ｃを加熱加圧して外部電極２１に
熱圧着により接続する。Further, in FIG. 8, the holding portion 12b around the opening 16 is fixed by the holding jig 25 in the same manner as described above,
The bonding tool 24 is inserted into the through hole portion 26 of the holding jig 25.
Is inserted, and the joint portion 13c is heated and pressed to be connected to the external electrode 21 by thermocompression bonding.
【００２５】このように、押え治具２５によって開孔部
１６の周囲の保持部１２ｂを固定すると、接合時におけ
る接合部１３ｃの不測な位置ズレが防止されるので、よ
り安定した実装を行うことができる。なお、押え治具２
５としてガラスまたは水晶レンズ等を用いると、上方か
らの位置合わせの確認が容易である。By fixing the holding portion 12b around the opening portion 16 by the holding jig 25 in this manner, an unexpected positional deviation of the joint portion 13c at the time of joining is prevented, so that more stable mounting is performed. You can The holding jig 2
If glass or a crystal lens is used as 5, it is easy to confirm the alignment from above.
【００２６】次に、図９においては、フィルム基材１２
の保持部１２ｂの開孔部１６内に、ガラスまたは水晶レ
ンズ等からなるレーザ透過部材２７を載置し、このレー
ザ透過部材２７にレーザ２２を照射して、接合部１３ｃ
を外部電極２１に接続する。Next, referring to FIG. 9, the film substrate 12
A laser transmitting member 27 made of glass, a crystal lens, or the like is placed in the opening portion 16 of the holding portion 12b, and the laser transmitting member 27 is irradiated with the laser 22 to join the joining portion 13c.
Is connected to the external electrode 21.
【００２７】このように、レーザ透過部材２７を介して
レーザ２２を照射することにより、各々の接合部１３ｃ
の全体に熱が均一に拡散されるため、接合強度の高い実
装を行うことができる。In this way, by irradiating the laser 22 through the laser transmitting member 27, the respective joint portions 13c are
Since the heat is uniformly diffused over the entire surface, mounting with high bonding strength can be performed.
【００２８】次に、図１０においては、各アウターリー
ド１３ｂがフィルム基材１２の下側に位置するように
し、開孔部１６の両側の保持部１２ｂ上から熱圧着用の
ボンディングツール２８によって開孔部１６の周囲を加
熱して、保持部１２ｂの下側で各アウターリード１３ｂ
を外部電極２１に接続する。なお、２９は開孔部１６内
で接合部１３ｃを押え付けるための押圧部である。Next, referring to FIG. 10, each outer lead 13b is positioned below the film substrate 12, and the outer leads 13b are opened from above the holding portions 12b on both sides of the opening 16 by a bonding tool 28 for thermocompression bonding. The periphery of the hole portion 16 is heated so that each outer lead 13b is provided below the holding portion 12b.
Is connected to the external electrode 21. Reference numeral 29 is a pressing portion for pressing the joint portion 13c in the opening portion 16.
【００２９】この方法によれば、保持部１２ｂの下側の
アウターリード１３ｂに接合部１３ｃも含めて熱が拡散
されるので、均一に接合することができる。According to this method, the heat is diffused to the outer lead 13b below the holding portion 12b including the joining portion 13c, so that the joining can be performed uniformly.
【００３０】図１は上述のようにして半導体装置を回路
基板２０に実装した状態の斜視図であるが、上記の各実
装方法において、リング状をなす保持部１２ｂの全体で
回路基板２０に対する位置合わせを行うことができる。
なお、実装後は、保持部１２ｂの各コーナー部分を切断
して、実装面積を小さくしてもよい。FIG. 1 is a perspective view showing a state in which the semiconductor device is mounted on the circuit board 20 as described above. In each of the mounting methods described above, the ring-shaped holding portion 12b is entirely positioned with respect to the circuit board 20. Matching can be done.
After mounting, the corners of the holding portion 12b may be cut to reduce the mounting area.
【００３１】以上、本発明の実施例について説明した
が、本発明は上記実施例に限定されることなく、本発明
の技術的思想に基づいて各種の有効な変更並びに応用が
可能である。例えば、本実施例のフィルム基材ではサポ
ート部と保持部とが別の部分として離されているが、こ
れらは連続させてもよい。Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and various effective modifications and applications are possible based on the technical idea of the present invention. For example, in the film substrate of this example, the support portion and the holding portion are separated as separate portions, but they may be continuous.
【００３２】[0032]
【発明の効果】以上説明したように、本発明の半導体装
置によれば、複数のリードの先端部分を支持するフィル
ム基材にスリット状の開孔部を設け、この開孔部に局所
的に露出する各リードの部分を接合部とすることによっ
て、これら各リードの接合部の乱列を完全に無くすこと
ができるので、この種のＴＡＢ方式半導体装置における
各リードの高密度・狭ピッチ化を促進することができ
る。As described above, according to the semiconductor device of the present invention, a slit-shaped opening portion is provided in the film base material supporting the tip portions of the leads, and the opening portion is locally provided. By forming the exposed portions of the leads as the joints, the random array of the joints of the respective leads can be completely eliminated. Therefore, it is possible to reduce the density and pitch of the leads in the TAB semiconductor device of this type. Can be promoted.
【００３３】また、本発明の半導体装置の実装方法によ
れば、上記開孔部内でレーザ照射またはボンディングツ
ールにより熱圧着することによって、各リードの接合部
に乱列がない状態で、各リードの接合部と基板の外部電
極との位置ズレもなく、極めて高精度で安定した実装を
行うことができる。Further, according to the mounting method of the semiconductor device of the present invention, laser irradiation or thermocompression bonding is performed in the opening by the bonding tool so that each lead is bonded without any disorder. There is no positional deviation between the bonding portion and the external electrode of the substrate, and highly accurate and stable mounting can be performed.
【図１】本発明の実施例において半導体装置を基板に実
装した状態の斜視図である。FIG. 1 is a perspective view of a semiconductor device mounted on a substrate according to an embodiment of the present invention.
【図２】実施例における半導体装置を構成するフィルム
キャリアの平面図である。FIG. 2 is a plan view of a film carrier that constitutes a semiconductor device according to an example.
【図３】上記フィルムキャリアから切離した半導体装置
の平面図である。FIG. 3 is a plan view of the semiconductor device separated from the film carrier.
【図４】レーザ照射により半導体装置を基板に実装する
例における要部の断面図である。FIG. 4 is a sectional view of a main part in an example of mounting a semiconductor device on a substrate by laser irradiation.
【図５】熱圧着ツールにより半導体装置を基板に実装す
る例における要部の断面図である。FIG. 5 is a cross-sectional view of a main part in an example of mounting a semiconductor device on a substrate with a thermocompression bonding tool.
【図６】押え治具をフィルム基材の保持部上に載置した
状態における要部の斜視図である。FIG. 6 is a perspective view of an essential part in a state where a holding jig is placed on a holding part of a film base material.
【図７】上記押え治具を用いてレーザ照射により半導体
装置を基板に実装する例における要部の断面図である。FIG. 7 is a cross-sectional view of a main part in an example in which a semiconductor device is mounted on a substrate by laser irradiation using the holding jig.
【図８】上記押え治具を用いて熱圧着ツールにより半導
体装置を基板に実装する例における要部の断面図であ
る。FIG. 8 is a cross-sectional view of a main part in an example in which a semiconductor device is mounted on a substrate by a thermocompression bonding tool using the pressing jig.
【図９】レーザ透過部材を用いてレーザ照射により半導
体装置を基板に実装する例における要部の断面図であ
る。FIG. 9 is a cross-sectional view of a main part in an example in which a semiconductor device is mounted on a substrate by laser irradiation using a laser transmitting member.
【図１０】保持部の下側のリードを接続して半導体装置
を基板に実装する例における要部の断面図である。FIG. 10 is a cross-sectional view of a main part in an example of mounting a semiconductor device on a substrate by connecting a lower lead of a holding part.
【図１１】リードの先端をフィルム基材により保持して
いる従来の半導体装置の平面図である。FIG. 11 is a plan view of a conventional semiconductor device in which the tips of leads are held by a film base material.
【図１２】上記従来の半導体装置を基板に実装する方法
を示す断面図である。FIG. 12 is a cross-sectional view showing a method of mounting the conventional semiconductor device on a substrate.
１１ フィルムキャリア １２ フィルム基材 １２ｂ 保持部 １３ リード １３ｂ アウターリード １３ｃ 接合部 １６ 開孔部 １７ 半導体チップ ２０ 回路基板 ２１ 外部電極 ２２ レーザ ２３ ハンダ ２４ ボンディングツール ２５ 押え治具 ２６ 透孔部 ２７ レーザ透過部材 ２８ ボンディングツール 11 film carrier 12 film base material 12b holding part 13 lead 13b outer lead 13c joint part 16 opening part 17 semiconductor chip 20 circuit board 21 external electrode 22 laser 23 solder 24 bonding tool 25 holding jig 26 through hole part 27 laser transmitting member 28 Bonding tools
Claims (6)
たフィルムキャリアに半導体チップを搭載してなる半導
体装置において、 前記複数のリードの先端部分を支持するフィルム基材
に、前記各リードの接合部が局所的に露出するスリット
状の開孔部を設けたことを特徴とする半導体装置。1. A semiconductor device in which a semiconductor chip is mounted on a film carrier having a plurality of leads formed on a film base material, wherein the leads are joined to a film base material supporting the tip portions of the plurality of leads. A semiconductor device having a slit-shaped opening portion whose portion is locally exposed.
するための方法であって、 前記フィルム基材の開孔部内にレーザを照射して、前記
各リードの接合部を前記基板の外部電極に接続すること
を特徴とする半導体装置の実装方法。2. A method for mounting the semiconductor device according to claim 1 on a substrate, wherein a laser is applied to the inside of the opening of the film base material so that the joint portion of each lead is outside the substrate. A method for mounting a semiconductor device, which comprises connecting to an electrode.
するための方法であって、 前記フィルム基材の開孔部内にボンディングツールを挿
入して、前記各リードの接合部を前記基板の外部電極に
熱圧着して接続することを特徴とする半導体装置の実装
方法。3. A method for mounting the semiconductor device according to claim 1 on a substrate, wherein a bonding tool is inserted into an opening portion of the film base material to form a bonding portion of each lead on the substrate. A method for mounting a semiconductor device, which comprises thermocompression-bonding and connecting to an external electrode.
装方法において、前記フィルム基材の開孔部と同形状の
スリット状の透孔部を有する押え治具を、その透孔部が
前記開孔部と一致するように載置することを特徴とする
半導体装置の実装方法。4. The method for mounting a semiconductor device according to claim 2, wherein the holding jig has a slit-shaped through hole portion having the same shape as the opening portion of the film base material, A method of mounting a semiconductor device, characterized in that the semiconductor device is mounted so as to coincide with the opening.
するための方法であって、 前記フィルム基材の開孔部内にレーザ透過部材を載置
し、このレーザ透過部材にレーザを照射して、前記各リ
ードの接合部を前記基板の外部電極に接続することを特
徴とする半導体装置の実装方法。5. A method for mounting the semiconductor device according to claim 1 on a substrate, wherein a laser transmitting member is placed in the opening of the film base material, and the laser transmitting member is irradiated with a laser. And a connecting part of each lead is connected to an external electrode of the substrate.
するための方法であって、 前記フィルム基材の開孔部の周囲を加熱して、前記フィ
ルム基材の下側で前記各リードを前記基板の外部電極に
接続することを特徴とする半導体装置の実装方法。6. A method for mounting the semiconductor device according to claim 1 on a substrate, wherein the periphery of the opening of the film base material is heated so that each of the leads is provided under the film base material. Is mounted on an external electrode of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6067719A JPH07249654A (en) | 1994-03-11 | 1994-03-11 | Semiconductor device and its packaging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6067719A JPH07249654A (en) | 1994-03-11 | 1994-03-11 | Semiconductor device and its packaging method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07249654A true JPH07249654A (en) | 1995-09-26 |
Family
ID=13353052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6067719A Withdrawn JPH07249654A (en) | 1994-03-11 | 1994-03-11 | Semiconductor device and its packaging method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07249654A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09232367A (en) * | 1996-02-21 | 1997-09-05 | Nec Corp | Manufacture of semiconductor device |
| JP2008055456A (en) * | 2006-08-30 | 2008-03-13 | Sumitomo Electric Ind Ltd | Soldering method and laser apparatus for soldering |
| US8080773B2 (en) | 2008-02-25 | 2011-12-20 | Sumitomo Electric Industries, Ltd. | Method and apparatus of measuring backward light, and laser processing method |
| US8305689B2 (en) | 2007-10-09 | 2012-11-06 | Sumitomo Electric Industries, Ltd. | Light source apparatus and optical module included therein |
| JP2017207722A (en) * | 2016-05-20 | 2017-11-24 | アルプス電気株式会社 | Lens drive device and manufacturing method of the same |
-
1994
- 1994-03-11 JP JP6067719A patent/JPH07249654A/en not_active Withdrawn
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09232367A (en) * | 1996-02-21 | 1997-09-05 | Nec Corp | Manufacture of semiconductor device |
| JP2008055456A (en) * | 2006-08-30 | 2008-03-13 | Sumitomo Electric Ind Ltd | Soldering method and laser apparatus for soldering |
| US8305689B2 (en) | 2007-10-09 | 2012-11-06 | Sumitomo Electric Industries, Ltd. | Light source apparatus and optical module included therein |
| US8080773B2 (en) | 2008-02-25 | 2011-12-20 | Sumitomo Electric Industries, Ltd. | Method and apparatus of measuring backward light, and laser processing method |
| JP2017207722A (en) * | 2016-05-20 | 2017-11-24 | アルプス電気株式会社 | Lens drive device and manufacturing method of the same |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
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