JPH0724798Y2 - High brightness light source - Google Patents
High brightness light sourceInfo
- Publication number
- JPH0724798Y2 JPH0724798Y2 JP1989035288U JP3528889U JPH0724798Y2 JP H0724798 Y2 JPH0724798 Y2 JP H0724798Y2 JP 1989035288 U JP1989035288 U JP 1989035288U JP 3528889 U JP3528889 U JP 3528889U JP H0724798 Y2 JPH0724798 Y2 JP H0724798Y2
- Authority
- JP
- Japan
- Prior art keywords
- light source
- dot
- back electrode
- light
- divided
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Light Sources And Details Of Projection-Printing Devices (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【考案の詳細な説明】 産業上の利用分野 本考案は電界発光を利用する高輝度光源に関するもので
あり、密着イメージセンサー用光源や微小高輝度光源と
して利用されるものである。DETAILED DESCRIPTION OF THE INVENTION Industrial Field of the Invention The present invention relates to a high-brightness light source using electroluminescence, and is used as a light source for a contact image sensor or a minute high-brightness light source.
従来の技術 光源としてよく用いられているLED素子を組み込んだ密
着イメージセンサーについて第２図を参照しながら説明
する。第２図において１はセラミック基板２上に形成し
たLEDアレイ３からなるLED光源,4は等倍結像光学系であ
るロッドレンズアレイ,5は受光素子,6は被測定物であ
る。2. Description of the Related Art A contact image sensor incorporating an LED element that is often used as a light source will be described with reference to FIG. In FIG. 2, reference numeral 1 is an LED light source including an LED array 3 formed on a ceramic substrate 2, 4 is a rod lens array which is an equal-magnification imaging optical system, 5 is a light receiving element, and 6 is an object to be measured.
この密着イメージセンサーの動作原理を第３図を参照し
ながら説明する。まず、LEDアレイ３の第１ドットD1が
点灯する。この第１ドットD1からの光はロッドレンズア
レイ４で集光され、被測定物６上にスポット光D1aを結
ぶ。次にLEDアレイ３の第２ドット2Dだけが点灯し被測
定物６上にスポット光D2aを結ぶ。以下同様にしてLEDア
レイ３の各ドットを順次一つずつ点灯させ、被測定物６
上のスポット光をD3a→D4a→D5a→…と移動させる。こ
のときの、被測定物６からの反射を受光素子５で受光
し、電気信号に変換して出力する。被測定物６上で、LE
Dアレイ３からのスポット光が当たった場所の反射率に
よりこの電気信号は変化し、被測定物６上の白い部分で
は＋側の出力が、黒い部分ではOVに近い出力が得られ
る。The operating principle of this contact image sensor will be described with reference to FIG. First, the first dot D1 of the LED array 3 is turned on. The light from the first dot D1 is condensed by the rod lens array 4 and forms a spot light D1a on the DUT 6. Next, only the second dot 2D of the LED array 3 is turned on and spot light D2a is connected onto the DUT 6. Similarly, each dot of the LED array 3 is sequentially lit up one by one, and the DUT 6 is measured.
Move the upper spot light as D3a → D4a → D5a → .... The reflection from the DUT 6 at this time is received by the light receiving element 5, converted into an electric signal, and output. LE on the DUT 6
This electric signal changes depending on the reflectance of the spot where the spot light from the D array 3 strikes, and the + side output is obtained in the white part on the DUT 6 and the output close to OV is obtained in the black part.
上記の様に、LED光源１は、LEDアレイ３が１ドットずつ
順次に点灯している。このため、センサーとしての感度
を高めるために、セラミック基板２上のLEDアレイ３のL
ED素子を微小ピッチで数多く並べ高輝度を得る必要があ
る。As described above, in the LED light source 1, the LED array 3 is sequentially turned on dot by dot. Therefore, in order to increase the sensitivity as a sensor, L of the LED array 3 on the ceramic substrate 2
It is necessary to arrange many ED elements at a fine pitch to obtain high brightness.
考案が解決しようとする課題 しかし、LED素子を微小ピッチで数多く並べることは困
難で、そのため高輝度を得ることができず、センサーと
しての感度が良くならないという欠点があった。However, there are drawbacks in that it is difficult to arrange many LED elements at a fine pitch, so that high brightness cannot be obtained and the sensitivity as a sensor is not improved.
課題を解決するための手段 本考案は、一方が平面、他方が凸面からなる片凸レンズ
の平面側に、透明電極、第１の絶縁層、発光層、第２の
絶縁層、背面電極と順次積層した薄膜EL素子を形成した
高輝度光源において、前記背面電極が一定ピッチで複数
に分割形成されていると共に、前記片凸レンズが前記分
割された背面電極のドット毎に複数の障壁により分割さ
れてなり、ドット毎に発光するようにしたことを特徴と
するものである。Means for Solving the Problems According to the present invention, a transparent electrode, a first insulating layer, a light emitting layer, a second insulating layer, and a back electrode are sequentially laminated on the flat surface side of a single-convex lens having one flat surface and the other convex surface. In the high-intensity light source forming the thin film EL element, the back electrode is divided into a plurality of parts at a constant pitch, and the single convex lens is divided by a plurality of barriers for each dot of the divided back electrode. The feature is that light is emitted for each dot.
作用 本考案に係る高輝度光源によれば、面発光である薄膜EL
素子を光源として用い、１ドット毎に順次発光させ、そ
の光を片凸レンズで集光するため、高輝度を得られ、セ
ンサーの感度が向上する。According to the high-intensity light source according to the present invention, the thin film EL that is surface emitting
The element is used as a light source, and light is emitted sequentially for each dot, and the light is condensed by a single-convex lens. Therefore, high brightness is obtained and the sensitivity of the sensor is improved.
実施例１ 以下、本考案について図を参照しながら説明する。Embodiment 1 Hereinafter, the present invention will be described with reference to the drawings.
第１図（ａ）は本考案の一実施例の密着イメージセンサ
ー用高輝度光源のＸ方向の部分断面図，第１図（ｂ）は
Ｘ方向と直交するＹ方向の断面図である。片凸レンズ７
の平面側に透明電極９（例えばITO），第１絶縁層10
（例えばSi3N4，Ta2O5），発光層11（例えばZnS:Mn），
第２絶縁層12（例えばSi3N4，Ta2O5），背面電極13（例
えばAl）を順次積層してなる薄膜EL素子を形成した構造
となっている。FIG. 1 (a) is a partial sectional view in the X direction of a high-intensity light source for a contact image sensor according to an embodiment of the present invention, and FIG. 1 (b) is a sectional view in the Y direction orthogonal to the X direction. Single convex lens 7
Transparent electrode 9 (eg ITO) on the flat side of the first insulating layer 10
(Eg Si 3 N 4 , Ta 2 O 5 ), light emitting layer 11 (eg ZnS: Mn),
It has a structure in which a thin film EL element is formed by sequentially laminating a second insulating layer 12 (eg Si 3 N 4 , Ta 2 O 5 ) and a back electrode 13 (eg Al).
この透明電極９と背面電極13との間に外部から交流電圧
を印加すると面電極の交差部分の発光層11が発光し、片
凸レンズ７にて集光され、光を取り出す。なお、１ドッ
トずつを順次に発光させるため、第１図（ａ）に示した
ように、背面電極13ドット分割してあり、片凸レンズ７
も１ドットを発光させた時、周辺に拡散しないように、
障壁８でドット毎に分割してある。When an AC voltage is applied from the outside between the transparent electrode 9 and the back electrode 13, the light emitting layer 11 at the intersection of the surface electrodes emits light, which is condensed by the single convex lens 7 to take out the light. In order to sequentially emit light one dot at a time, the back electrode is divided into 13 dots as shown in FIG.
Even when 1 dot is made to emit light, so as not to diffuse to the surroundings,
The barrier 8 divides each dot.
これにより、Ｘ−Ｘ′方向の背面電極13のピッチd1を変
えることなく、Ｙ−Ｙ′方向の透明電極９と背面電極13
の交差する部分の距離d2を長くすることで、容易に高輝
度を得られる。このため、密着イメージセンサーの感度
を上げられ、更にd1を小さくし、d2を大きくすることで
感度を下げることなく解像度も向上できる。As a result, the transparent electrode 9 and the back electrode 13 in the YY 'direction can be changed without changing the pitch d1 of the back electrode 13 in the XX' direction.
High brightness can be easily obtained by increasing the distance d2 at the intersecting point of. Therefore, the sensitivity of the contact image sensor can be increased, and the resolution can be improved without decreasing the sensitivity by further decreasing d1 and increasing d2.
実施例２ 前記実施例１では密着イメージセンサー用光源としての
例を述べたが、片凸レンズを背面電極側からみて円形に
し、その平面側に薄膜EL素子を形成した光源を用いるこ
とで、微小点を照明する高輝度光源としても利用でき
る。Example 2 In Example 1 described above, an example of a light source for a contact image sensor was described. By using a light source in which a single-convex lens has a circular shape when viewed from the back electrode side and a thin film EL element is formed on the flat surface side, minute points can be obtained. It can also be used as a high-intensity light source for illuminating.
考案の効果 以上説明したように、本考案は、片凸レンズの平面側に
薄膜EL素子を形成し、凸面側から集光して光を取り出す
ことで容易に高輝度を得られ、密着イメージセンサー用
高輝度光源や微小点を照明する微小高輝度光源を得るこ
とができる。Effects of the Invention As described above, according to the present invention, a thin film EL element is formed on the flat side of a single-convex lens, and high brightness can be easily obtained by collecting light from the convex side for use in a contact image sensor. It is possible to obtain a high-intensity light source and a minute high-intensity light source that illuminates a minute point.
第１図（ａ）は本考案の一実施例である密着イメージセ
ンサー用高輝度光源のＸ方向の部分断面，第１図（ｂ）
は本考案の一実施例である密着イメージセンサー用高輝
度光源のＸ方向と直交するＹ方向の断面図である。第２
図は従来の密着イメージセンサーの斜視図，第３図は従
来の密着イメージセンサーの縦断面図の部分拡大図であ
る。 ７……片凸レンズ、８……障壁、９……透明電極、10…
…第１絶縁層、11……発光層、12……第２絶縁層、13…
…背面電極。FIG. 1 (a) is a partial cross section in the X direction of a high-intensity light source for a contact image sensor according to an embodiment of the present invention, FIG. 1 (b).
FIG. 3 is a cross-sectional view of a high-intensity light source for a contact image sensor according to an embodiment of the present invention in a Y direction orthogonal to the X direction. Second
FIG. 3 is a perspective view of a conventional contact image sensor, and FIG. 3 is a partially enlarged view of a vertical sectional view of the conventional contact image sensor. 7 ... Single convex lens, 8 ... Barrier, 9 ... Transparent electrode, 10 ...
… First insulating layer, 11 …… Light emitting layer, 12 …… Second insulating layer, 13 ・ ・ ・
... back electrode.
Claims (1)
ズの平面側に、透明電極、第１の絶縁層、発光層、第２
の絶縁層、背面電極を順次積層した薄膜EL素子を形成し
た高輝度光源において、 前記背面電極が一定ピッチで複数に分割形成されている
と共に、前記片凸レンズが前記分割された背面電極のド
ット毎に複数の障壁により分割されてなり、ドット毎に
発光するようにしたことを特徴とする高輝度光源。1. A transparent electrode, a first insulating layer, a light emitting layer, and a second surface are provided on the plane side of a single-convex lens, one of which is a flat surface and the other of which is a convex surface.
In a high-brightness light source in which a thin film EL element in which an insulating layer and a back electrode are sequentially laminated is formed, the back electrode is divided into a plurality of parts at a constant pitch, and the single convex lens is formed for each dot of the divided back electrode. A high-brightness light source characterized in that it is divided by a plurality of barriers and emits light for each dot.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989035288U JPH0724798Y2 (en) | 1989-03-27 | 1989-03-27 | High brightness light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989035288U JPH0724798Y2 (en) | 1989-03-27 | 1989-03-27 | High brightness light source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02126396U JPH02126396U (en) | 1990-10-18 |
| JPH0724798Y2 true JPH0724798Y2 (en) | 1995-06-05 |
Family
ID=31540508
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989035288U Expired - Lifetime JPH0724798Y2 (en) | 1989-03-27 | 1989-03-27 | High brightness light source |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0724798Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5135998B2 (en) * | 2007-11-02 | 2013-02-06 | コニカミノルタビジネステクノロジーズ株式会社 | Image reading device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2670572B2 (en) * | 1987-06-18 | 1997-10-29 | 株式会社小松製作所 | Thin film EL element |
-
1989
- 1989-03-27 JP JP1989035288U patent/JPH0724798Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02126396U (en) | 1990-10-18 |
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