JPH0722496A - Device for sucking and holding substrate - Google Patents
Device for sucking and holding substrateInfo
- Publication number
- JPH0722496A JPH0722496A JP15851293A JP15851293A JPH0722496A JP H0722496 A JPH0722496 A JP H0722496A JP 15851293 A JP15851293 A JP 15851293A JP 15851293 A JP15851293 A JP 15851293A JP H0722496 A JPH0722496 A JP H0722496A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- holder
- suction
- substrate
- mounting surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】 本発明は、半導体素子を製造す
るための半導体ウエハや、液晶基板を製造するためのガ
ラスプレ─ト等の板状の基板を吸着保持する吸着保持装
置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a suction holding device for holding a semiconductor wafer for manufacturing a semiconductor element or a plate-shaped substrate such as a glass plate for manufacturing a liquid crystal substrate by suction.
【０００２】[0002]
【従来の技術】 従来この種の基板を加工する投影型露
光装置やレ─ザリペア装置等においては、基板を載置台
（ホルダ）上で基板（ウエハ）を保持するために基板を
ホルダ上で真空吸着している。図７、図８はこのような
従来の基板の吸着保持装置を示すものであり、図７は平
面図、図８は図７のＤ−Ｄ矢視断面図である。2. Description of the Related Art Conventionally, in a projection type exposure apparatus or a laser repair apparatus for processing a substrate of this type, a substrate is vacuumed on a holder in order to hold the substrate (wafer) on the mounting table (holder). Adsorbed. 7 and 8 show such a conventional suction and holding device for a substrate, FIG. 7 is a plan view, and FIG. 8 is a sectional view taken along line D-D of FIG.
【０００３】図７、図８において、載置台（以下、ウエ
ハを保持するのでウエハホルダという）１には同心円状
および放射状のウエハ吸着溝４０，４１が穿設されてお
り、溝４０，４１内には吸着穴３が１カ所あるいは数カ
所形成されている。この吸着穴３は図８に示したように
通気穴６に通じており、空圧継手７、配管８、電磁弁９
を介して真空源１０に通じている。In FIGS. 7 and 8, a mounting table (hereinafter, referred to as a wafer holder for holding a wafer) 1 is provided with concentric and radial wafer suction grooves 40 and 41, and the wafer suction grooves 40 and 41 are formed in the grooves 40 and 41. Has one or several suction holes 3. The suction hole 3 communicates with the ventilation hole 6 as shown in FIG. 8, and the pneumatic joint 7, the pipe 8 and the solenoid valve 9 are connected.
Through the vacuum source 10.
【０００４】ウエハホルダ１は、ウエハステ─ジ１１上
に取り付けられており、ウエハステ─ジ１１内には、ウ
エハ上下装置５が設けられている。ウエハ上下装置５は
ウエハを上下させる１本あるいは数本の上下動棒５ａを
有しており、ウエハ交換時にウエハホルダ１に形成した
貫通孔１ａを突き抜けて上下動し、ウエハ２を不図示の
搬送装置からウエハホルダ１へ受け渡し、もしくはウエ
ハホルダ１上から不図示の搬送装置に受け渡す構造とな
っている。The wafer holder 1 is mounted on a wafer stage 11, and a wafer raising / lowering device 5 is provided in the wafer stage 11. The wafer up-down device 5 has one or several up-and-down moving rods 5a for moving the wafer up and down. The wafer up-and-down device 5 moves up and down through a through hole 1a formed in the wafer holder 1 at the time of wafer exchange to transfer the wafer 2 (not shown). The structure is such that it is delivered from the apparatus to the wafer holder 1 or delivered from above the wafer holder 1 to a transfer device (not shown).
【０００５】図９は、ウエハをプリアライメントしてか
らウエハステ─ジ１１上のウエハホルダ１に吸着保持さ
れるまでの流れを模式的に示した図である。プリアライ
メント装置５１において外形レベルのプリアライメント
を行ったウエハ２は、ウエハ搬送ア─ム５２によってウ
エハステ─ジ１１上のウエハホルダ１の位置まで運ばれ
る。ここで、ウエハ位置決めステ─ジ１１内部に設置さ
れたウエハ上下装置５が上昇し、ウエハ搬送ア─ム５２
からウエハ２を受け取る。その後、ウエハ搬送ア─ム５
２はウエハホルダ１から退避し、ウエハ２を乗せたウエ
ハ上下装置の上下動棒５ａは下降して、ウエハホルダ１
にウエハ２を受け渡す。FIG. 9 is a diagram schematically showing the flow from pre-alignment of the wafer to suction holding by the wafer holder 1 on the wafer stage 11. The wafer 2 which has been pre-aligned to the outer shape level by the pre-alignment device 51 is carried to the position of the wafer holder 1 on the wafer stage 11 by the wafer carrying arm 52. At this time, the wafer up-and-down device 5 installed inside the wafer positioning stage 11 rises to move the wafer transfer arm 52.
Receive wafer 2 from. After that, wafer transfer arm 5
2 is retracted from the wafer holder 1 and the vertical moving rod 5a of the wafer vertical device on which the wafer 2 is placed is lowered to move the wafer holder 1
The wafer 2 is handed over to.
【０００６】[0006]
【発明が解決しようとする課題】図７、図８の如き従来
技術においては、ウエハ上下装置５に受け渡されたウエ
ハ２を下降させる時、ウエハ２とウエハホルダ１の隙間
の空気が抵抗となるため、ウエハ上下装置５の下降速度
を大きく出来ないという問題があった。さらに、この抵
抗となっている空気は、ウエハ２とウエハホルダ１の間
の狭い空間から放射状にしか逃げられない（図８に図示
した矢印方向）ため、ウエハ上下装置５が降りきって、
ウエハ上下装置の上下動棒５ａの真空吸着を止めてから
ウエハホルダ１の真空吸着がはじまるまでの間に、ウエ
ハ２とウエハホルダ１の載置面との間に残った空気の層
がウエハ２をウェハホルダ１上で横滑りさせる方向の力
として働くため、せっかくプリアライメント済で搬送さ
れてきたウエハ２のプリアライメント精度を劣化させて
しまうという問題点があった。また、処理済ウエハ２を
上昇させる時も、ウエハ２の表面と裏面の大気圧の差の
ためウエハがウエハホルダからはがれにくくなり、ウエ
ハ上昇速度を大きく出来ないという問題があった。In the prior art as shown in FIGS. 7 and 8, when the wafer 2 transferred to the wafer up-down device 5 is lowered, the air in the gap between the wafer 2 and the wafer holder 1 becomes a resistance. Therefore, there is a problem that the lowering speed of the wafer up-down device 5 cannot be increased. Furthermore, since the air that has become the resistance can only escape radially from the narrow space between the wafer 2 and the wafer holder 1 (in the direction of the arrow shown in FIG. 8), the wafer up-and-down device 5 goes down,
A layer of air left between the wafer 2 and the mounting surface of the wafer holder 1 holds the wafer 2 between the time when the vacuum suction of the vertical moving rod 5a of the wafer lifting device is stopped and the time when the vacuum suction of the wafer holder 1 starts. There is a problem in that the pre-alignment accuracy of the wafer 2 that has been pre-aligned and carried is deteriorated because it acts as a force in the direction of sliding on the wafer 1. Further, even when the processed wafer 2 is lifted, there is a problem in that the wafer cannot be easily peeled from the wafer holder due to the difference in atmospheric pressure between the front surface and the back surface of the wafer 2, and the wafer rising speed cannot be increased.
【０００７】[0007]
【課題を解決する為の手段】上記問題点を解決するため
に、基板が載置される載置面に一方の開口を形成された
貫通孔を載置面にほぼ均一に分散するように複数形成し
た。In order to solve the above-mentioned problems, a plurality of through holes having one opening formed on a mounting surface on which a substrate is mounted are arranged so as to be substantially evenly distributed on the mounting surface. Formed.
【０００８】[0008]
【作用】本発明における基板の表裏面の大気が基板にあ
たえる影響について本発明の第１実施例を示した図１，
図２を参照して説明する。図１は、ウエハホルダの平面
図、図２は図１の矢視断面図である。図１，図２のウエ
ハホルダ１上のウエハ載置面に、貫通孔４の一方の開口
を多数設けている。そのため、搬送装置からウエハ上下
装置５に受け渡されたウエハ２を下降させるとき、ウエ
ハ２とウエハホルダ１の隙間の空気が貫通孔４を通って
逃げられる。したがって、空気抵抗が小さくなり、ウエ
ハ上下装置５の下降速度を大きくすることができる。さ
らにウエハ上下装置５が降りきった時にウエハ２とウエ
ハホルダ１の載置面との間に薄い空気の層が出来にくい
ため、ウエハ上下装置５の上下動棒５ａの真空吸着が止
まってから、ウエハホルダ１の真空吸着穴３からの真空
吸着が始まるまでの間に、ウエハ２がウエハホルダ１上
を横滑りして、プリアライメント精度を劣化させるとい
う問題も解消あるいは軽減される。The effect of the atmosphere on the front and back surfaces of the substrate on the substrate according to the present invention is shown in FIG.
This will be described with reference to FIG. 1 is a plan view of the wafer holder, and FIG. 2 is a sectional view taken in the direction of the arrow in FIG. A large number of openings of the through holes 4 are provided on the wafer mounting surface on the wafer holder 1 shown in FIGS. Therefore, when the wafer 2 transferred from the transfer device to the wafer up-down device 5 is lowered, the air in the gap between the wafer 2 and the wafer holder 1 escapes through the through hole 4. Therefore, the air resistance is reduced, and the descending speed of the wafer up-down device 5 can be increased. Furthermore, since it is difficult to form a thin air layer between the wafer 2 and the mounting surface of the wafer holder 1 when the wafer raising / lowering device 5 is completely lowered, the wafer holder is stopped after the vacuum suction of the vertical moving rod 5a of the wafer raising / lowering device 5 is stopped. The problem that the wafer 2 slides over the wafer holder 1 before the vacuum suction from the vacuum suction hole 3 of No. 1 starts to deteriorate the pre-alignment accuracy is also solved or reduced.
【０００９】また、ウエハホルダ１上での作業処理済ウ
エハ２をウエハホルダ１から上昇させる時も、ウエハ２
表裏面の圧力差を小さく保てるため、ウエハ２の上昇速
度を大きく出来る。When the wafer 2 which has been processed on the wafer holder 1 is lifted from the wafer holder 1, the wafer 2 is also lifted.
Since the pressure difference between the front and back surfaces can be kept small, the rising speed of the wafer 2 can be increased.
【００１０】[0010]
【実施例】図１，図２は本発明の第１実施例である。図
１は平面図、図２は図１の矢視断面図である。ウエハホ
ルダ１には中心と周縁に計７個の吸着穴３が設けられて
おり、それぞれが、通気穴６，空圧継手７，配管８電磁
弁９を介して真空源１０に通じている。1 and 2 show a first embodiment of the present invention. FIG. 1 is a plan view, and FIG. 2 is a sectional view taken along the arrow in FIG. The wafer holder 1 is provided with a total of seven suction holes 3 at the center and the peripheral edge, and each of them is connected to a vacuum source 10 via a ventilation hole 6, a pneumatic joint 7, a pipe 8 and a solenoid valve 9.
【００１１】また、ウエハホルダ１上には、ウエハ載置
面全面に渡って複数の貫通孔４が設けられている。貫通
孔４はウエハ載置面から垂直にウエハホルダを貫通する
ように形成されている。ウエハステ─ジ１１上にはウエ
ハ上下装置５が設けられている。ウエハ上下装置５は、
ウエハを上下させる３本の上下動棒５ａを有しており、
ウエハ交換時にウエハホルダに形成された貫通孔１ａを
突き抜けて上下動しウエハ２を受け渡す。A plurality of through holes 4 are provided on the wafer holder 1 over the entire wafer mounting surface. The through hole 4 is formed so as to vertically penetrate the wafer holder from the wafer mounting surface. A wafer lifting device 5 is provided on the wafer stage 11. The wafer lifting device 5
It has three vertical moving rods 5a for moving the wafer up and down,
When the wafer is exchanged, it passes through the through hole 1a formed in the wafer holder and moves up and down to deliver the wafer 2.
【００１２】上述の如く構成された実施例の動作につい
て、以下に説明する。図１、図２のウエハホルダ１で
は、複数の貫通孔４が設けられている。そのため、ウエ
ハ上下装置５に受渡されたウエハ２を下降させる時、ウ
エハとウエハホルダ１との隙間の空気が、貫通孔４を通
りウエハホルダ１の裏面に逃げるため、空気抵抗が非常
に小さくなりウエハ上下装置１８の下降速度を大きく出
来る。さらにウエハ上下装置１８が降りきってウエハ上
下装置５の上下動棒５ａの真空吸着を止めてから、ウエ
ハホルダ１の真空吸着が始まるまでの間に、ウエハ２と
ウエハホルダ１の載置面との間に薄い空気の層が出来に
くいため、ウエハ２がウエハホルダ１上を横滑りして、
プリアライメント精度を劣化させるという問題も解消あ
るいは軽減する。また、処理済ウエハ２をウエハホルダ
１から上昇させる時も、ウエハ表裏面の空気の圧力差が
小さくなるため、ウエハ上下装置５の上昇速度を大きく
できる。The operation of the embodiment configured as described above will be described below. In the wafer holder 1 of FIGS. 1 and 2, a plurality of through holes 4 are provided. Therefore, when the wafer 2 transferred to the wafer up / down device 5 is lowered, the air in the gap between the wafer and the wafer holder 1 escapes to the back surface of the wafer holder 1 through the through holes 4, so that the air resistance becomes very small and the wafer up / down The descending speed of the device 18 can be increased. Further, between the wafer 2 and the mounting surface of the wafer holder 1 until the vacuum suction of the vertical movement rod 5a of the wafer vertical device 5 is stopped and the vacuum suction of the wafer holder 1 is started after the wafer vertical device 18 is completely lowered. Since it is difficult to form a thin air layer, the wafer 2 slides on the wafer holder 1,
It also eliminates or reduces the problem of degrading pre-alignment accuracy. Further, even when the processed wafer 2 is lifted from the wafer holder 1, the pressure difference between the air on the front and back surfaces of the wafer becomes small, so that the lifting speed of the wafer up-down device 5 can be increased.
【００１３】図３、図４は、本発明の第２実施例であ
る。図３は平面図、図４は図３のＢ−Ｂ矢視断面図であ
る。ウエハホルダ１上には、ウエハホルダ１の中心と２
重の同心円上にほぼ等間隔に計１３個の島状のウエハ吸
着面１６ａ，１６ｂが設けられており（１３個の吸着面
のうち異なる同心円上のもの１６ａ，１６ｂを例にと
る。）、ウエハ２は、ウエハ吸着面１６ａ，１６ｂのみ
でウエハホルダ１と接触出来るようになっている（図４
から明らかなように、他の部分は、低くなっているので
ウエハ２とは接触しない）。ウエハ吸着面１６ａ，１６
ｂの内部には、それぞれウエハ吸着溝１５ａ，１５ｂお
よび吸着穴３ａ，３ｂが設けられており、通気穴６ａ，
６ｂ、空圧継手７ａ，７ｂ、配管８ａ，８ｂ、電磁弁９
ａ，９ｂを介してそれぞれ真空源１０に通じている。3 and 4 show a second embodiment of the present invention. 3 is a plan view and FIG. 4 is a sectional view taken along the line BB of FIG. On the wafer holder 1, the center of the wafer holder 1 and
A total of 13 island-shaped wafer suction surfaces 16a and 16b are provided on the heavy concentric circles at substantially equal intervals (for example, among the 13 suction surfaces, those on different concentric circles 16a and 16b are taken as examples). The wafer 2 can contact the wafer holder 1 only by the wafer suction surfaces 16a and 16b (see FIG. 4).
As is clear from the above, the other parts are not in contact with the wafer 2 because they are low). Wafer suction surfaces 16a, 16
Wafer suction grooves 15a and 15b and suction holes 3a and 3b are provided in the inside of b, respectively.
6b, pneumatic couplings 7a, 7b, pipes 8a, 8b, solenoid valve 9
The vacuum source 10 is connected via a and 9b.
【００１４】また、ウエハホルダ１上には、ウエハ載置
面全面に渡って小断面積の開口を持つ貫通孔が多数設け
られている。なお、貫通孔４はウエハ載置面から垂直に
設けられている。ウエハホルダ１は、ウエハステ─ジ１
１上に取り付けられており、ウエハステ─ジ１１内に
は、ウエハ上下装置５が設けられている。ウエハ上下装
置５は、ウエハを上下動させる３本の上下動棒５ａを有
しておりウエハ交換時にウエハホルダ１に形成された貫
通孔１ａを突き抜けて上下動し、ウエハ２を受け渡す。Further, on the wafer holder 1, a large number of through holes each having an opening having a small cross-sectional area are provided over the entire wafer mounting surface. The through hole 4 is provided vertically from the wafer mounting surface. The wafer holder 1 is a wafer stage 1
1 and a wafer up-down device 5 is provided in the wafer stage 11. The wafer up / down device 5 has three up / down moving rods 5a for moving the wafer up and down, and moves up and down through a through hole 1a formed in the wafer holder 1 at the time of wafer exchange to transfer the wafer 2.
【００１５】上述の如く構成された実施例の動作につい
て、以下に説明する。図３、図４のウエハホルダ１で
は、多数の貫通孔４が設けられている。そのため、ウエ
ハ上下装置５に受渡されたウエハ２を下降させる時、ウ
エハとウエハホルダ１との隙間の空気が、貫通孔４を通
りウエハホルダ１の裏面に逃げるため、空気抵抗が非常
に小さくなりウエハ上下装置１８の下降速度を大きく出
来る。さらにウエハ上下装置１８が降りきってウエハ上
下装置５の上下動棒５ａの真空吸着を止めてから、ウエ
ハホルダ１の真空吸着が始まるまでの間に、ウエハ２と
ウエハホルダ１の載置面との間に薄い空気の層が出来に
くいため、ウエハ２がウエハホルダ１上を横滑りして、
プリアライメント精度を劣化させるという問題も解消あ
るいは軽減する。また、処理済ウエハ２をウエハホルダ
１から上昇させる時も、ウエハ表裏面の空気の圧力差が
小さくなるため、ウエハ上下装置５の上昇速度を大きく
できる。The operation of the embodiment configured as described above will be described below. In the wafer holder 1 shown in FIGS. 3 and 4, a large number of through holes 4 are provided. Therefore, when lowering the wafer 2 transferred to the wafer raising / lowering device 5, the air in the gap between the wafer and the wafer holder 1 escapes to the back surface of the wafer holder 1 through the through holes 4, so that the air resistance becomes very small and the wafer upper and lower sides are lowered. The descending speed of the device 18 can be increased. Further, between the wafer 2 and the mounting surface of the wafer holder 1 until the vacuum suction of the vertical movement rod 5a of the wafer vertical device 5 is stopped and the vacuum suction of the wafer holder 1 is started after the wafer vertical device 18 is completely lowered. Since it is difficult to form a thin air layer, the wafer 2 slides on the wafer holder 1,
It also eliminates or reduces the problem of degrading pre-alignment accuracy. Further, even when the processed wafer 2 is lifted from the wafer holder 1, the pressure difference between the air on the front and back surfaces of the wafer becomes small, so that the lifting speed of the wafer up-down device 5 can be increased.
【００１６】ところで、図３、図４において、二重の同
心円上に設けられた吸着面１６ａ，１６ｂのうち、外側
の同心円上の吸着面１６ａは、吸着経路１５ａ、３ａ、
６ａ、７ａ、８ａ、９ａ、１０を持ち、大きいサイズの
ウエハを吸着させるために設置されているものである。
また、内側の同心円上の吸着面１６ｂは、吸着経路１５
ｂ、３ｂ、６ｂ、７ｂ、８ｂ、９ｂ、１０を持ち、小さ
いサイズのウエハを吸着させるために設置されているも
のである。このように、電磁弁９ａ、９ｂを独立に切り
換えることにより、複数サイズのウエハの吸着にも対応
することができる。3 and 4, of the suction surfaces 16a, 16b provided on the double concentric circles, the suction surfaces 16a on the outer concentric circles are suction paths 15a, 3a,
It has 6a, 7a, 8a, 9a and 10 and is installed to adsorb a large size wafer.
Further, the suction surface 16b on the inner concentric circle is the suction path 15
b, 3b, 6b, 7b, 8b, 9b, 10 are provided for adsorbing a small size wafer. As described above, by independently switching the solenoid valves 9a and 9b, it is possible to handle suction of wafers of a plurality of sizes.
【００１７】図５、図６は、本発明の第３実施例であ
る。図５は平面図、図６は図５のＣ─Ｃ矢視断面図であ
る。ウエハホルダ１上には、計７個の島状のウエハ吸着
面１６がウエハホルダ１の中心と放射状にほぼ一定の間
隔で設けられており、ウエハ２は、ウエハ吸着面１６の
みでウエハホルダ１と接触出来るようになっている（他
の部分は、段差がついているので接触しない）。ウエハ
吸着面１６の内部には、ウエハ吸着溝１５および吸着穴
３が設けられており、通気穴６、空圧継手７、配管８、
電磁弁９を介して真空源１０に通じている。5 and 6 show the third embodiment of the present invention. 5 is a plan view, and FIG. 6 is a sectional view taken along the line CC of FIG. A total of seven island-shaped wafer suction surfaces 16 are provided on the wafer holder 1 at a substantially constant interval radially from the center of the wafer holder 1, and the wafer 2 can contact the wafer holder 1 only by the wafer suction surface 16. (The other parts do not touch because there is a step). A wafer suction groove 15 and a suction hole 3 are provided inside the wafer suction surface 16, and a ventilation hole 6, a pneumatic joint 7, a pipe 8,
It communicates with a vacuum source 10 via a solenoid valve 9.
【００１８】また、ウエハホルダ１上には、ウエハ載置
面のほぼ全面に渡り数個の大きな開口を持つ貫通孔４が
ウエハ載置面のほぼ全面に渡って等間隔に設けられてい
る。ウエハホルダ１は、ウエハステ─ジ１１上に取り付
けられている。さらに、ウエハステ─ジ１１内には、ウ
エハ上下装置５が取り付けられている。ウエハ上下装置
５は、ウエハを上下させる３本の上下動棒５ａを有して
おり、ウエハ交換時にウエハホルダ１に形成した貫通孔
１ａを突き抜けて上下動し、ウエハ２を受け渡す構造と
なっている。Further, on the wafer holder 1, through holes 4 having several large openings are provided at substantially equal intervals over substantially the entire surface of the wafer mounting surface. The wafer holder 1 is mounted on the wafer stage 11. Further, in the wafer stage 11, a wafer raising / lowering device 5 is attached. The wafer up-down device 5 has three up-and-down moving rods 5a for moving the wafer up and down, and has a structure for passing up and down by penetrating through the through hole 1a formed in the wafer holder 1 when the wafer is exchanged. There is.
【００１９】このように、多数の穴を開けるかわりに１
個または数個の大きな貫通孔を開けても、実施例１と同
様の効果が得られる。なお前記実施例においては、貫通
孔はウエハホルダのウエハ載置面から垂直にホルダ裏面
に穿孔したが、これに限られることなく載置面に一方の
開口を持っていれば、他方の開口は載置面以外の面であ
ればどのような位置でもよい。また実施例では円形のウ
エハについて考えたが、矩形のガラスプレ─ト等を吸着
保持するホルダについても、載置面に複数の開口を持つ
貫通孔を設けることによって、同様の効果が得られる。Thus, instead of making a large number of holes, 1
Even if one or several large through holes are opened, the same effect as that of the first embodiment can be obtained. In the above-described embodiment, the through hole is formed on the back surface of the wafer holder vertically from the wafer mounting surface of the wafer holder. However, the through hole is not limited to this, and if the mounting surface has one opening, the other opening is not mounted. Any position may be used as long as it is a surface other than the placement surface. Further, although a circular wafer is considered in the embodiment, the same effect can be obtained for a holder for sucking and holding a rectangular glass plate or the like by providing through holes having a plurality of openings on the mounting surface.
【００２０】[0020]
【発明の効果】以上のように、本発明によれば、載置台
上に貫通孔があるため基板下降時の基板と載置台の載置
面の間の空気抵抗が非常に小さくなり基板の下降速度を
大きく出来る。また、基板の表裏面の圧力差が小さくな
るので、基板上昇時の上昇速度も大きく出来る。したが
って、装置全体としてのサイクルタイムが小さくなると
いう効果がある。また、基板を下降させた時に基板と載
置台の載置面との隙間に薄い空気の層が出来にくいた
め、載置台上を基板が横滑りしてプリアライメント精度
を劣化させるという問題も解消あるいは軽減されるとい
う効果もある。As described above, according to the present invention, since there is a through hole on the mounting table, the air resistance between the substrate and the mounting surface of the mounting table when the substrate descends becomes very small, and the substrate descends. You can increase the speed. Further, since the pressure difference between the front and back surfaces of the substrate becomes small, the ascending speed at the time of ascending the substrate can be increased. Therefore, there is an effect that the cycle time of the entire apparatus is reduced. In addition, since it is difficult to form a thin air layer in the gap between the substrate and the mounting surface of the mounting table when the substrate is lowered, the problem that the substrate slides on the mounting table and deteriorates the pre-alignment accuracy is also eliminated or reduced. There is also the effect of being done.
【図１】本発明の第１実施例の平面図である。FIG. 1 is a plan view of a first embodiment of the present invention.
【図２】図１のＡ─Ａ矢視断面図である。FIG. 2 is a sectional view taken along the line AA of FIG.
【図３】本発明の第２実施例の平面図である。FIG. 3 is a plan view of a second embodiment of the present invention.
【図４】図３のＢ─Ｂ矢視断面図である。FIG. 4 is a sectional view taken along the line BB of FIG.
【図５】本発明の第３実施例の平面図である。FIG. 5 is a plan view of a third embodiment of the present invention.
【図６】図５のＣ─Ｃ矢視断面図である。6 is a cross-sectional view taken along the line CC of FIG.
【図７】従来の技術を示す平面図である。FIG. 7 is a plan view showing a conventional technique.
【図８】図７のＤ─Ｄ矢視断面図である。8 is a cross-sectional view taken along the line DD of FIG.
【図９】ウエハをプリアライメントしてから、ステ─ジ
上のウエハホルダに吸着するまでの流れを、模式的に示
した図である。FIG. 9 is a diagram schematically showing a flow from pre-alignment of a wafer to adsorption onto a wafer holder on a stage.
１ ウエハホルダ １ａ ウエハ上下動棒突き抜け用貫通
孔 ２ ウエハ ３，３ａ，３ｂ 吸着穴 ４ 貫通孔 ５ ウエハ上下装置 ５ａ 上下動棒 ６，６ａ，６ｂ 通気穴 ７，７ａ，７ｂ 空圧継手 ８，８ａ，８ｂ 配管 ９，９ａ，９ｂ 電磁弁 １０ 真空源 １１ ウエハステ─ジ １５ａ，１５ｂ，１５ 吸着溝 １６ａ，１６ｂ，１６ ウエハ吸着面 ４０ 同心円状のウエハ吸着溝 ４１ 放射状のウエハ吸着溝 ５１ プリアライメント装置 ５２ ウエハ搬送ア─ムDESCRIPTION OF SYMBOLS 1 Wafer holder 1a Wafer up-and-down moving rod penetrating through hole 2 Wafers 3, 3a, 3b Adsorption hole 4 Through-hole 5 Wafer up-and-down device 5a Up-and-down moving rod 6, 6a, 6b Vent hole 7, 7a, 7b Pneumatic coupling 8, 8a, 8b Piping 9, 9a, 9b Solenoid valve 10 Vacuum source 11 Wafer stage 15a, 15b, 15 Adsorption groove 16a, 16b, 16 Wafer adsorption surface 40 Concentric wafer adsorption groove 41 Radial wafer adsorption groove 51 Pre-alignment device 52 Wafer Transport arm
Claims (1)
置台と、前記載置面に前記基板を吸着保持させる吸着手
段と、前記載置面に対してほぼ垂直な方向へ上下し、基
板搬送装置から前記載置面に基板を受け渡す基板受け渡
し手段とを有する基板の吸着保持装置において、前記載
置面に一方の開口を形成された貫通孔を前記一方の開口
が前記載置面にほぼ均一に分散するように前記載置台に
複数形成したことを特徴とする基板の吸着保持装置。1. A mounting table having a mounting surface on which a plate-shaped substrate is mounted, suction means for sucking and holding the substrate on the mounting surface, and a direction substantially perpendicular to the mounting surface. In a substrate suction-holding device having up and down and a substrate transfer means for transferring a substrate from a substrate transfer device to the mounting surface, the one opening is provided with a through hole having one opening formed in the mounting surface. A plurality of substrate suction-holding devices, characterized in that a plurality of them are formed on the mounting table so as to be dispersed substantially uniformly on the mounting surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15851293A JPH0722496A (en) | 1993-06-29 | 1993-06-29 | Device for sucking and holding substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15851293A JPH0722496A (en) | 1993-06-29 | 1993-06-29 | Device for sucking and holding substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0722496A true JPH0722496A (en) | 1995-01-24 |
Family
ID=15673360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15851293A Pending JPH0722496A (en) | 1993-06-29 | 1993-06-29 | Device for sucking and holding substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0722496A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002057209A (en) * | 2000-06-01 | 2002-02-22 | Tokyo Electron Ltd | Single-wafer processing apparatus and single-wafer processing method |
| WO2003034483A1 (en) * | 2001-10-16 | 2003-04-24 | Tokyo Electron Limited | Treatment subject elevating mechanism, and treating device using the same |
| JP2007180125A (en) * | 2005-12-27 | 2007-07-12 | Hitachi High-Technologies Corp | Exposure apparatus, exposing method, and method of manufacturing display panel substrate |
| JP2009033178A (en) * | 2007-07-30 | 2009-02-12 | Applied Materials Inc | Vacuum chucking heater of axisymmetrical and uniform thermal profile |
-
1993
- 1993-06-29 JP JP15851293A patent/JPH0722496A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002057209A (en) * | 2000-06-01 | 2002-02-22 | Tokyo Electron Ltd | Single-wafer processing apparatus and single-wafer processing method |
| WO2003034483A1 (en) * | 2001-10-16 | 2003-04-24 | Tokyo Electron Limited | Treatment subject elevating mechanism, and treating device using the same |
| CN1331208C (en) * | 2001-10-16 | 2007-08-08 | 东京毅力科创株式会社 | Treatment subject elevating mechanism, and treating device using the same |
| JP2007180125A (en) * | 2005-12-27 | 2007-07-12 | Hitachi High-Technologies Corp | Exposure apparatus, exposing method, and method of manufacturing display panel substrate |
| JP2009033178A (en) * | 2007-07-30 | 2009-02-12 | Applied Materials Inc | Vacuum chucking heater of axisymmetrical and uniform thermal profile |
| JP2014053645A (en) * | 2007-07-30 | 2014-03-20 | Applied Materials Inc | Vacuum chucking heater of axisymmetrical and uniform thermal profile |
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