JPH07202114A - Film adhering method for lead frame, and chip adhering method for lead frame - Google Patents
Film adhering method for lead frame, and chip adhering method for lead frameInfo
- Publication number
- JPH07202114A JPH07202114A JP5337186A JP33718693A JPH07202114A JP H07202114 A JPH07202114 A JP H07202114A JP 5337186 A JP5337186 A JP 5337186A JP 33718693 A JP33718693 A JP 33718693A JP H07202114 A JPH07202114 A JP H07202114A
- Authority
- JP
- Japan
- Prior art keywords
- film
- lead frame
- adhesive
- chip
- attached
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
Landscapes
- Punching Or Piercing (AREA)
- Die Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、接着剤を介してフィル
ムをリードフレームに貼り付けるリードフレームへのフ
ィルム貼付け方法、及び半導体チップをリードフレーム
に貼り付けるリードフレームへのチップ貼付け方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for attaching a film to a lead frame for attaching a film to a lead frame via an adhesive, and a method for attaching a chip to a lead frame for attaching a semiconductor chip to the lead frame.
【0002】[0002]
【従来の技術】高密度実装を可能にしたCOL(Chip on
Lead)や、LOC(Lead on Chip)構造のパッケージで
は、チップ搭載用として、予め高耐熱ポリイミドフィル
ムの片面又は両面に接着剤を塗布した接着剤付きフィル
ムをリードフレームに貼り付けて、プレハブリードフレ
ームとしたものが実用化されている。2. Description of the Related Art COL (Chip on) that enables high-density mounting
Lead) or LOC (Lead on Chip) structure package, pre-fabricated lead frame by attaching a film with adhesive to the lead frame, in which adhesive is applied to one or both sides of high heat resistant polyimide film in advance for chip mounting. Has been put to practical use.
【0003】このリードフレームへのフィルム貼り付け
方法は図2(A)に示すように、金型6の定位置まで搬
送したリードフレーム9に、予め所定温度に加熱したヒ
ータブロック5をリードフレーム下面から接触させ、接
着剤付きフィルム7をパンチ1とダイ2で打ち抜く。そ
して図2(B)に示すように、リードフレーム9を介し
て打ち抜いたフィルム8をダイ2の直下のヒータブロッ
ク5に押し付け、フィルム8をリードフレーム9に熱圧
着する。なお、図中3はストリッパ、4はパンチ1にフ
ィルム7を吸着させる吸引口、10はパイロットホー
ル、11はパイロットピン、12はガイドレール、17
はガイドポストである。As shown in FIG. 2 (A), the method of attaching the film to the lead frame is as follows. The lead frame 9 conveyed to a fixed position of the die 6 is provided with the heater block 5 preheated to a predetermined temperature on the lower surface of the lead frame. Then, the adhesive-attached film 7 is punched out by the punch 1 and the die 2. Then, as shown in FIG. 2B, the film 8 punched through the lead frame 9 is pressed against the heater block 5 immediately below the die 2, and the film 8 is thermocompression bonded to the lead frame 9. In the figure, 3 is a stripper, 4 is a suction port for sucking the film 7 on the punch 1, 10 is a pilot hole, 11 is a pilot pin, 12 is a guide rail, 17
Is a guide post.
【0004】ところで、リードフレームに貼り付けられ
るフィルム7の形状は、初期のものは図3(A)に示す
ように、リードフレーム9のパターンに合わせてリード
9a間をつなぐ単純なな矩形形状を呈するものが主流で
あった。By the way, the initial shape of the film 7 attached to the lead frame is a simple rectangular shape for connecting the leads 9a according to the pattern of the lead frame 9 as shown in FIG. 3 (A). What was presented was the mainstream.
【0005】しかし、このような単純な矩形形状を呈し
ていると、ポリイミドフィルムは吸湿性が高いので使用
面積を最小限に止める必要があるが、リード9a間の不
要な部分にも貼り付けられているため面積が大きい。ま
た、フィルム面積が大きいと、図3(B)に示すよう
に、リード9a間のフィルム7はダイボンド時(チップ
貼付け時)の加圧によって撓み13を生じ、チップ14
とフィルム7間に隙間が生じる。これらの面積や隙間の
問題は、いずれも製品後パッケージクラックの原因とな
るため好ましくなかった。However, if the polyimide film has such a simple rectangular shape, the polyimide film has a high hygroscopic property, so that it is necessary to minimize the use area, but the polyimide film is also attached to an unnecessary portion between the leads 9a. Has a large area. Further, when the film area is large, the film 7 between the leads 9a is bent 13 due to the pressure applied at the time of die bonding (at the time of attaching the chip), as shown in FIG.
A gap is created between the film 7 and the film 7. All of these problems of area and gap are not preferable because they cause package cracks after the product is manufactured.
【0006】そこでごく最近では、リード9a間の不要
なフィルムを切り取るような検討が行なわれている。例
えば、図4(A)はDRAMのLOC用リードフレーム
例を示すが、配線長を短くし、アクセスタイムを高速化
するためにリード9aの内側にバスバ9bを設けてい
る。このため、打ち抜きフィルム7として、チップ固定
に必要なエリアのリード周囲に沿ってトレースした複雑
な形状(櫛形)が要求されるようになってきた。この場
合、フィルムの使用面積が最小限に止まり、また図4
(B)に示すように、ダイボンド時の加圧によるフィル
ムの隙間問題が生じない。Therefore, most recently, studies have been conducted to cut off unnecessary film between the leads 9a. For example, FIG. 4A shows an example of a LOC lead frame for a DRAM, but a bus bar 9b is provided inside the lead 9a in order to shorten the wiring length and speed up the access time. For this reason, the punching film 7 is required to have a complicated shape (comb shape) traced along the periphery of the lead in the area necessary for fixing the chip. In this case, the used area of the film is minimized, and as shown in FIG.
As shown in (B), the film gap problem due to pressure during die bonding does not occur.
【0007】[0007]
【発明が解決しようとする課題】上述したように、従来
のものでは、リードフレームに貼り付けるフィルムが複
雑な形状になってきたために、リードフレームへのフィ
ルム貼り付け工程で、次のような問題が新たに生じた。As described above, in the conventional device, the film to be attached to the lead frame has a complicated shape. Therefore, the following problems occur in the process of attaching the film to the lead frame. Was newly born.
【0008】(1) 使用するフィルムの物性にばらつきが
あったり、あるいはフィルム打ち抜き形状が複雑であっ
たりすると、フィルムの切り口から繊維状のバリが発生
する場合が多く、生産性を大幅に阻害する。すなわち図
5に示すように、打ち抜き時に発生するバリ18が、リ
ード9aの先端のボンディング面や、ワイヤボンダのキ
ャピラリ16の先端に付着すると、ワイヤが圧着されな
かったり、キャピラリが目詰りを起こしたりしてボンデ
ィング不良を起こす。(1) If the physical properties of the film to be used vary, or if the punched-out film has a complicated shape, fibrous burrs often occur at the cut end of the film, greatly impairing productivity. . That is, as shown in FIG. 5, when the burr 18 generated during punching adheres to the bonding surface at the tip of the lead 9a or the tip of the capillary 16 of the wire bonder, the wire is not crimped or the capillary is clogged. Cause bonding failure.
【0009】(2) 半導体パッケージは高精度に加工され
たリードフレームにSiチップを搭載し組み立てを行な
っているが、フィルムを貼付けたLOC等の接着剤付き
リードフレームでは、高温度(約400℃)でフィルム
を貼り付けた後、ガラス転位温度Tg(約250℃)で
硬化開始するため、常温になるとフィルムとリードフレ
ーム材料の線膨張係数の差から、リードフレームにバイ
メタルのように大きく反りが発生し、半導体装置の組立
てに支障を来す場合があった。(2) A semiconductor package is assembled by mounting a Si chip on a highly accurately processed lead frame. However, in a lead frame with an adhesive such as LOC to which a film is attached, a high temperature (about 400 ° C.) is used. After the film is pasted with), hardening starts at the glass transition temperature Tg (about 250 ° C), so at room temperature, due to the difference in linear expansion coefficient between the film and the lead frame material, the lead frame is largely warped like a bimetal. In some cases, this may occur, which may hinder the assembly of the semiconductor device.
【0010】(3) フィルムの打ち抜きと貼付けを同一金
型で行なっているため、貼付けに必要な発熱部の組込み
と強制水冷を必要とし、金型形状が複雑で高価になる。(3) Since the punching and the sticking of the film are carried out by the same mold, it is necessary to incorporate the heat generating part necessary for sticking and forced water cooling, which makes the mold shape complicated and expensive.
【0011】(4) リードフレームへのフィルム貼付けに
限らず、チップ貼付けの場合も同様な高温乾燥工程を経
るので、チップ下のリードフレームに反りが発生する。(4) The same high-temperature drying process is performed not only when the film is attached to the lead frame but also when the chip is attached, so that the lead frame under the chip is warped.
【0012】本発明の目的は、フィルムの貼付け性を改
善することによって、従来技術の欠点を解消し、フィル
ムの打ち抜き時に発生したバリに起因するボンディング
不良を無くし、しかもフィルム貼付け後にリードフレー
ムの反りを大幅に低減することが可能なリードフレーム
へのフィルム貼付け方法を提供することにある。An object of the present invention is to solve the drawbacks of the prior art by improving the sticking property of the film, to eliminate the defective bonding due to the burr generated at the time of punching the film, and to warp the lead frame after sticking the film. It is an object of the present invention to provide a method for attaching a film to a lead frame, which can significantly reduce
【0013】また、本発明の目的は、チップの貼付け性
を改善することによって、チップの貼付け後にリードフ
レームの反りを大幅に低減することが可能なリードフレ
ームへのチップ貼付け方法を提供することにある。Another object of the present invention is to provide a method of attaching a chip to a lead frame, which is capable of greatly reducing the warp of the lead frame after the chip is attached by improving the attachability of the chip. is there.
【0014】[0014]
【課題を解決するための手段】本発明は、絶縁性または
導電性フィルムを接着剤を介してリードフレームに貼り
付けるリードフレームへのフィルム貼付け方法におい
て、上記フィルムをその被接着面に接着剤を塗布してか
ら金型で所定形状に打ち抜き、打ち抜いたフィルムの被
接着面に塗布された接着剤を溶剤で膨潤溶解させ、該膨
潤溶解させた接着剤を介して上記フィルムをリードフレ
ームに貼り付け、貼付け後100℃前後で低温乾燥する
ようにしたものである。The present invention provides a method for attaching a film to a lead frame, wherein an insulating or conductive film is attached to the lead frame via an adhesive, and the film is attached to the surface to be attached with the adhesive. After applying, punch out into a predetermined shape with a die, swell and dissolve the adhesive applied to the adhered surface of the punched film with a solvent, and attach the above film to the lead frame through the swelled and dissolved adhesive After attachment, it was dried at a low temperature around 100 ° C.
【0015】また、本発明は、リードフレームに貼り付
けた絶縁性または導電性フィルムの被接着面に塗布され
た接着剤を介して半導体チップを貼り付けるリードフレ
ームへのチップ貼付け方法において、上記フィルムの被
接着面に塗布された接着剤を溶剤で膨潤溶解させ、該膨
潤溶解させた接着剤を介して上記半導体チップをリード
フレームへ貼り付け、貼付け後100℃前後で低温乾燥
するようにしたものである。The present invention also provides a method for attaching a chip to a lead frame, wherein a semiconductor chip is attached via an adhesive applied to the adhered surface of an insulating or conductive film attached to the lead frame. The adhesive applied to the surface to be adhered is swollen and dissolved with a solvent, the semiconductor chip is attached to the lead frame via the swollen and dissolved adhesive, and the adhesive is dried at a low temperature around 100 ° C. Is.
【0016】これらの場合において、上記接着剤には熱
可塑性又は熱硬化性接着剤などを、また溶剤にはこれら
を膨潤溶解する公知の溶剤を使用することができるが、
特に接着剤にポリエーテルアミドイミドを使用した場合
には、溶剤は膨潤溶解が短時間で始まるNMPとするこ
とが好ましい。In these cases, a thermoplastic or thermosetting adhesive or the like can be used as the above-mentioned adhesive, and a known solvent for swelling and dissolving them can be used as the solvent.
In particular, when polyether amide imide is used for the adhesive, the solvent is preferably NMP in which swelling and dissolution start in a short time.
【0017】[0017]
【作用】金型で所定形状にフィルムを打ち抜くと、フィ
ルムの切り口から繊維状のバリが発生する。しかし、接
着剤を塗布したフィルムの被接着面を溶剤槽に浸漬する
と、溶剤により接着剤が膨潤し溶解するので、このとき
バリは溶解除去される。残った接着剤は粘性を帯び、常
温でも直に接着が可能な状態となる。When the film is punched into a predetermined shape with a die, fibrous burrs are generated from the cut end of the film. However, when the surface to be adhered of the film coated with the adhesive is immersed in a solvent tank, the adhesive swells and dissolves by the solvent, so that the burr is dissolved and removed at this time. The remaining adhesive is viscous and ready for direct bonding even at room temperature.
【0018】この状態でフィルムをリードフレームに押
しつけて貼り付ける。貼付け後、雰囲気温度100℃前
後で乾燥し接着を完了すると、常温との温度差が小さい
ため、フィルムとリードフレーム材料の線膨張係数の差
があっても、リードフレームに反りが発生しないか、発
生してもきわめて小さい。In this state, the film is pressed and attached to the lead frame. After sticking, when drying is performed at an ambient temperature of about 100 ° C. and the bonding is completed, since the temperature difference from room temperature is small, even if there is a difference in linear expansion coefficient between the film and the lead frame material, warpage does not occur in the lead frame. Even if it occurs, it is extremely small.
【0019】フィルムを貼り付けたリードフレームに、
フィルム表面に塗布した接着剤で半導体チップを貼り付
ける場合も、上述したフィルムの貼り付けと全く同様の
方法で貼り付けることができ、リードフレームに反りが
発生しない。On the lead frame with the film attached,
Also when the semiconductor chip is attached with the adhesive applied to the film surface, it can be attached by the same method as the above-mentioned attachment of the film, and the lead frame is not warped.
【0020】[0020]
【実施例】以下、本発明の実施例を説明する。図1は、
LOC用リードフレームへのフィルム貼り付け方法の実
施例を示す工程図である。フィルム貼付け金型は、打ち
抜きと貼り付けを同一金型で行なっていた従来例(図2
参照)のものと異なり、打ち抜きと貼り付けを別の金型
とステージで行なうようにしている。EXAMPLES Examples of the present invention will be described below. Figure 1
It is process drawing which shows the Example of the film sticking method to the lead frame for LOC. With regard to the film sticking die, the conventional example in which punching and sticking were performed using the same die (Fig. 2
(See), punching and pasting are done in different molds and stages.
【0021】すなわち、打ち抜き金型は、フィルムの搬
送上、上からではなく下からの打ち抜き方式とし、パン
チ1、ストリッパ3、ダイ2を備えるが、ダイ2の上に
貼付け用のヒータブロックは設けない。その代りに、打
ち抜いたフィルム8を搬送するためにダイ吸着用のコレ
ット23を利用する(図1(A))。また、貼り付けス
テージは、上下に対向配設した2個のヒートブロック
5、5を備え、雰囲気温度100℃前後の低温に制御さ
れる(図1(E))。That is, the punching die is a punching method from the bottom, not from the top, in transporting the film, and is provided with a punch 1, a stripper 3 and a die 2, but a heater block for sticking is provided on the die 2. Absent. Instead, a die suction collet 23 is used to convey the punched film 8 (FIG. 1A). In addition, the bonding stage includes two heat blocks 5 and 5 which are vertically opposed to each other and is controlled to a low ambient temperature of about 100 ° C. (FIG. 1 (E)).
【0022】さて、接着剤としてポリエーテルアミドイ
ミドを両面に塗布した接着剤付きポリイミドフィルム7
を用意し、これを打ち抜き金型の定位置に供給した後
(図1(A))、パンチ1でフィルム7を所定形状に打
ち抜き、この打ち抜いたフィルム8をコレット23で吸
着する(図1(B))。Now, an adhesive-attached polyimide film 7 coated with polyetheramideimide on both sides as an adhesive
Is prepared and supplied to a fixed position of the punching die (FIG. 1 (A)), the film 7 is punched into a predetermined shape by the punch 1, and the punched film 8 is adsorbed by the collet 23 (FIG. 1 ( B)).
【0023】吸着したフィルム8はそのまま溶剤24と
してNMP等の入った溶剤槽25上に搬送し、リードフ
レーム9に貼り付けられる被接着面のみを溶剤24に接
触させ接着剤の表面を膨潤溶解する(図1(C))。被
接着面のみを接触させるのは、フィルムを損傷させない
ためである。発明者らは実験では、接着剤がポリエーテ
ルアミドイミドの場合、NMPに浸漬すると約10秒後
に接着層の表面が粘性を帯び、約20秒で常温接着が可
能な状態となることを確認している。The adsorbed film 8 is directly conveyed as a solvent 24 onto a solvent tank 25 containing NMP or the like, and only the adhered surface to be attached to the lead frame 9 is brought into contact with the solvent 24 to swell and dissolve the surface of the adhesive. (FIG. 1 (C)). The reason why only the adhered surface is brought into contact is that the film is not damaged. In the experiments, the inventors confirmed that when the adhesive is a polyether amide imide, when it is immersed in NMP, the surface of the adhesive layer becomes viscous after about 10 seconds and can be bonded at room temperature in about 20 seconds. ing.
【0024】次に、フィルム8を吸着したままコレット
23をリードフレーム9の所定位置に移送し、粘性を帯
びた接着剤でフィルム8をリードフレーム9に押し付け
る(図1(D))。その後、貼付けステージのヒートブ
ロック5間に移送し、雰囲気温度100℃前後の低温で
乾燥し接着を完了する(図1(E))。Next, the collet 23 is transferred to a predetermined position on the lead frame 9 while the film 8 is adsorbed, and the film 8 is pressed against the lead frame 9 with a viscous adhesive (FIG. 1 (D)). Then, it is transferred between the heat blocks 5 on the attaching stage and dried at a low ambient temperature of about 100 ° C. to complete the adhesion (FIG. 1 (E)).
【0025】このように本実施例によれば、リードフレ
ームへの貼り付け前に、打ち抜いたフィルム8の被接着
面のみを溶剤24に接触させて接着剤を膨潤溶解するの
で、フィルム打ち抜き時のバリも一緒に膨潤して溶解す
るため、バリ発生を無視できる。このことはバリの発生
が特に多い複雑なフィルム形状の打ち抜き時に、バリ対
策を考慮しなくてもよいのでメリットが大きい。従っ
て、リードフレーム製造工程において絶対に防止しなけ
ればならないバリ18に起因するワイヤ圧着不良や、キ
ャピラリ目詰りなどによるボンディング不良をなくすこ
とができる。As described above, according to this embodiment, only the adhered surface of the punched film 8 is brought into contact with the solvent 24 to swell and dissolve the adhesive before sticking to the lead frame. Since burr also swells and dissolves together, burr generation can be ignored. This is a great advantage because it is not necessary to consider a burr countermeasure when punching out a complicated film shape in which burr is particularly often generated. Therefore, it is possible to eliminate wire crimping defects due to the burr 18 that must be absolutely prevented in the lead frame manufacturing process and bonding defects due to capillary clogging.
【0026】また、本実施例によれば、リードフレーム
にフィルムを押し付けた後、高々100℃前後の低温で
乾燥するようにしたので、400℃近い高温度でフィル
ム貼付け後、ガラス転位温度Tgで硬化開始するように
した従来工程と異なり、常温になっても材料の線膨張係
数の差に起因する反りがリードフレームに発生せず、半
導体装置の組立てが円滑になる。Further, according to this embodiment, since the film is pressed against the lead frame and then dried at a low temperature of about 100 ° C. at most, the film is stuck at a high temperature of about 400 ° C. and then at the glass transition temperature Tg. Unlike the conventional process in which the curing is started, the warp due to the difference in the linear expansion coefficient of the material does not occur in the lead frame even at room temperature, and the assembly of the semiconductor device becomes smooth.
【0027】さらに、打ち抜きと貼り付けを別に行なう
ようにし、打ち抜き金型から発熱部や強制水冷機構を排
除したので、金型形状が単純となり安価に構成できる。Further, since punching and pasting are performed separately and the heat generating portion and the forced water cooling mechanism are eliminated from the punching die, the die shape is simple and the cost can be reduced.
【0028】ところで上記実施例では、リードフレーム
へのフィルム貼り付け方法を説明したが、この方法は、
リードフレームに半導体チップを搭載する場合にも全く
同様に適用できる。というのは、両面に接着剤を塗布し
た接着剤付きフィルムのそれぞれの面で、リード及びチ
ップの貼り付けを行なうからである。チップの場合は、
従ってリードフレームに貼り付けたチップ貼付け面とな
るフィルムの被接着面のみを溶剤に浸漬させて、塗布さ
れた接着剤を膨潤溶解させ、この溶解防塵した接着剤を
介して半導体チップをリードフレームの所定位置へ貼り
付ける。貼付け後、同じく100℃前後で低温乾燥する
と、チップ下のリードフレームに反りが発生しない。By the way, in the above embodiment, the method of attaching the film to the lead frame has been described.
The same applies to the case where a semiconductor chip is mounted on the lead frame. This is because the leads and the chips are attached to each surface of the adhesive-coated film whose both surfaces are coated with the adhesive. For chips,
Therefore, only the adhered surface of the film that is the chip attachment surface attached to the lead frame is immersed in a solvent to swell and dissolve the applied adhesive, and the semiconductor chip is attached to the lead frame through the dissolution and dustproof adhesive. Stick it in place. After attachment, if the same low temperature drying is performed at around 100 ° C., the lead frame under the chip does not warp.
【0029】打ち抜いたフィルムを溶剤に浸漬すると
き、フィルムの片面のみならず両面を浸漬しておけば、
リードフレームにフィルムを貼り付けた後、引き続きリ
ードフレームへのチップ貼り付けができるので、リード
フレームの製造が容易になる。なお、上記実施例ではL
OC用リードフレームについて説明したが、本発明はC
OL用リードフレームについても適用できる。また、リ
ードフレームに貼り付けるフィルムは絶縁層(ポリイミ
ドフィルム)に限らず、導電性フィルムであってもよ
い。また、熱可塑性接着剤としてハイマル(日立化成工
業株式会社製)を使うこともできる。When the punched film is dipped in a solvent, if not only one side but also both sides of the film are dipped,
Since the chip can be continuously attached to the lead frame after the film is attached to the lead frame, the lead frame can be easily manufactured. In the above embodiment, L
Although the lead frame for OC has been described, the present invention uses C
It can also be applied to an OL lead frame. The film attached to the lead frame is not limited to the insulating layer (polyimide film) and may be a conductive film. Further, Haimaru (manufactured by Hitachi Chemical Co., Ltd.) can be used as the thermoplastic adhesive.
【0030】また、打ち抜き金型は下からの打ち抜き方
式としたが、従来同様に上からの打ち抜き方式としても
よく、その場合、溶剤は浸漬ではなく、塗布方式とする
ことが好ましい。Further, although the punching die is a punching method from the bottom, it may be a punching method from the top as in the conventional case. In that case, it is preferable to use the coating method instead of dipping the solvent.
【0031】[0031]
【発明の効果】(1) 請求項1に記載の発明によれば、フ
ィルムの貼付け後の乾燥時の温度が100℃前後である
ため、材料間の線膨張差によるリードフレームの反りが
極めて少ない。また、フィルムの打ち抜き時に発生した
バリは膨潤し溶解するためバリ発生を無視して作業でき
る。従って、貼付け作業性やボンディング性が格段に向
上し信頼性に優れる。EFFECTS OF THE INVENTION (1) According to the invention described in claim 1, since the temperature of the film after drying is about 100 ° C. after attachment of the film, the warp of the lead frame due to the difference in linear expansion between the materials is extremely small. . In addition, since burrs generated during punching of the film swell and dissolve, burrs can be ignored in the work. Therefore, the sticking workability and the bonding property are remarkably improved and the reliability is excellent.
【0032】(2) 請求項2に記載の発明によれば、チッ
プ貼付けの場合においても、乾燥時の温度が100℃前
後であるため材料の線膨張差によるリードフレームの反
りが極めて少ない。(2) According to the second aspect of the present invention, even when the chip is attached, the temperature of the lead frame during drying is around 100 ° C., so that the warp of the lead frame due to the difference in linear expansion of the material is extremely small.
【0033】(3) 請求項3に記載の発明によれば、接着
剤にポリエーテルアミドイミドを使用してNMPに浸漬
するようにしたので、短時間に接着が可能な状態を作り
出すことができ、作業効率を高めることができる。(3) According to the invention described in claim 3, since the polyether amide imide is used as the adhesive and the adhesive is immersed in NMP, it is possible to create a state in which the adhesive can be adhered in a short time. , Work efficiency can be improved.
【図1】本発明のリードフレームへのフィルム貼付け方
法の実施例を説明する作業工程図。FIG. 1 is a work process diagram illustrating an embodiment of a method for attaching a film to a lead frame of the present invention.
【図2】従来のLOCパッケージのフィルム貼付け方法
を説明する金型装置の概略断面図であって、(A)はフ
ィルム貼付け前の説明図、(B)はフィルム打抜き貼付
け後の説明図。2A and 2B are schematic cross-sectional views of a mold device for explaining a conventional method of attaching a film of a LOC package, wherein FIG. 2A is an explanatory diagram before attaching the film, and FIG. 2B is an explanatory diagram after punching and attaching the film.
【図3】従来のLOCパッケージ用リードフレームのフ
ィルム貼付け状態を示す説明図であって、(A)はフィ
ルム貼付け状態の平面図、(B)はダイボンド時のフィ
ルム変形状態を示す断面図。3A and 3B are explanatory views showing a film pasting state of a conventional LOC package lead frame, FIG. 3A is a plan view of the film pasting state, and FIG. 3B is a sectional view showing a film deformed state at the time of die bonding.
【図4】従来の改善されたLOCパッケージ用リードフ
レームのフィルム貼付け状態を示す説明図であって、
(A)はリード間フィルムを切除したフィルム貼付け状
態の平面図、(B)はダイボンド時のフィルム貼付け状
態を示す断面図。FIG. 4 is an explanatory view showing a pasted state of a film of a conventional improved LOC package lead frame,
(A) is a plan view of a film attached state in which the inter-lead film is cut off, and (B) is a sectional view showing the film attached state at the time of die bonding.
【図5】従来のワイヤボンド時の不具合状況を示す説明
図。FIG. 5 is an explanatory view showing a defect situation at the time of conventional wire bonding.
1 パンチ 2 ダイ 3 ストリッパ 5 ヒートブロック 7 フィルム 8 打ち抜いたフィルム 9 リードフレーム 23 コレット 24 溶剤 25 溶剤槽 1 Punch 2 Die 3 Stripper 5 Heat Block 7 Film 8 Punched Film 9 Lead Frame 23 Collet 24 Solvent 25 Solvent Tank
Claims (3)
を貼り付けるリードフレームへのフィルム貼付け方法に
おいて、上記フィルムをその被接着面に接着剤を塗布し
てから金型で所定形状に打ち抜き、打ち抜いたフィルム
の被接着面に塗布された接着剤を溶剤で膨潤溶解させ、
該膨潤溶解させた接着剤を介して上記フィルムをリード
フレームに貼り付け、貼付け後100℃前後で低温乾燥
するようにしたことを特徴とするリードフレームへのフ
ィルム貼付け方法。1. A method of sticking a film to a lead frame via an adhesive, comprising: applying the adhesive to a surface to be adhered of the film; then punching the film into a predetermined shape by a die and punching. The adhesive applied to the adhered surface of the film is swollen and dissolved with a solvent,
A method of sticking a film to a lead frame, which comprises sticking the film to a lead frame via the swelling-dissolved adhesive, and drying the film at a low temperature around 100 ° C. after sticking.
接着面に塗布された接着剤を介して半導体チップを貼り
付けるリードフレームへのチップ貼付け方法において、
上記フィルムの被接着面に塗布された接着剤を溶剤で膨
潤溶解させ、該膨潤溶解させた接着剤を介して上記半導
体チップをリードフレームへ貼り付け、貼付け後100
℃前後で低温乾燥するようにしたことを特徴とするリー
ドフレームへのチップ貼付け方法。2. A chip attaching method to a lead frame, wherein a semiconductor chip is attached via an adhesive applied to an adhered surface of a film attached to a lead frame,
The adhesive applied to the surface to be adhered of the film is swollen and dissolved with a solvent, the semiconductor chip is attached to the lead frame via the swollen and dissolved adhesive, and after the attachment, 100
A method of attaching a chip to a lead frame, characterized in that it is dried at a low temperature around ℃.
あり、上記溶剤がNメチルピロリドン(NMP)である
ことを特徴とする請求項1に記載のリードフレームへの
フィルム貼付け方法、または請求項2に記載のリードフ
レームへのチップ貼付け方法。3. The method of attaching a film to a lead frame according to claim 1, wherein the adhesive is polyether amide imide and the solvent is N-methylpyrrolidone (NMP). The method of attaching the chip to the lead frame described in.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5337186A JP3018881B2 (en) | 1993-12-28 | 1993-12-28 | Method of attaching film to lead frame and method of attaching chip to lead frame |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5337186A JP3018881B2 (en) | 1993-12-28 | 1993-12-28 | Method of attaching film to lead frame and method of attaching chip to lead frame |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH07202114A true JPH07202114A (en) | 1995-08-04 |
JP3018881B2 JP3018881B2 (en) | 2000-03-13 |
Family
ID=18306264
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5337186A Expired - Fee Related JP3018881B2 (en) | 1993-12-28 | 1993-12-28 | Method of attaching film to lead frame and method of attaching chip to lead frame |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3018881B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6183589B1 (en) | 1997-03-14 | 2001-02-06 | Samsung Electronics Co., Ltd. | Method for manufacturing lead-on-chip (LOC) semiconductor packages using liquid adhesive applied under the leads |
US6379571B1 (en) * | 1998-06-11 | 2002-04-30 | Canon Kabushiki Kaisha | Etching method for processing substrate, dry etching method for polyetheramide resin layer, production method of ink-jet printing head, ink-jet head and ink-jet printing apparatus |
KR200482294Y1 (en) * | 2016-06-28 | 2017-01-10 | 주식회사 아이엠테크놀로지 | Mold Apparatus for Circuit Board |
CN110421635A (en) * | 2019-07-26 | 2019-11-08 | 苏州峰之建精密设备有限公司 | Film cuts sticking machine structure automatically |
-
1993
- 1993-12-28 JP JP5337186A patent/JP3018881B2/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6183589B1 (en) | 1997-03-14 | 2001-02-06 | Samsung Electronics Co., Ltd. | Method for manufacturing lead-on-chip (LOC) semiconductor packages using liquid adhesive applied under the leads |
US6379571B1 (en) * | 1998-06-11 | 2002-04-30 | Canon Kabushiki Kaisha | Etching method for processing substrate, dry etching method for polyetheramide resin layer, production method of ink-jet printing head, ink-jet head and ink-jet printing apparatus |
KR200482294Y1 (en) * | 2016-06-28 | 2017-01-10 | 주식회사 아이엠테크놀로지 | Mold Apparatus for Circuit Board |
CN110421635A (en) * | 2019-07-26 | 2019-11-08 | 苏州峰之建精密设备有限公司 | Film cuts sticking machine structure automatically |
Also Published As
Publication number | Publication date |
---|---|
JP3018881B2 (en) | 2000-03-13 |
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