JPH0719157Y2 - Semiconductor package for immersion cooling - Google Patents
Semiconductor package for immersion coolingInfo
- Publication number
- JPH0719157Y2 JPH0719157Y2 JP1988115465U JP11546588U JPH0719157Y2 JP H0719157 Y2 JPH0719157 Y2 JP H0719157Y2 JP 1988115465 U JP1988115465 U JP 1988115465U JP 11546588 U JP11546588 U JP 11546588U JP H0719157 Y2 JPH0719157 Y2 JP H0719157Y2
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- semiconductor package
- cooling
- heat
- cooling liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
Description
【考案の詳細な説明】 〔概要〕 各種電子機器に広く使用されて不活性の冷却液に浸漬す
るプリント板の回路を構成する浸漬冷却用半導体パッケ
ージに関し、 冷却液へ半導体パッケージを水平に浸漬した時にヒート
シンクの表面より発する気泡を冷却液と共に対流させ
て、ヒートシンク表面の膜沸騰発生を防止することがで
きて冷却効率が高い浸漬冷却用半導体パッケージの提供
を目的とし、 周辺より中央にかけて順次高なるように成形して熱伝導
性の優れたヒートシンクを、パッケージにマウントした
半導体チップの背面に貼着する。Detailed Description of the Invention [Outline] A semiconductor package for immersion cooling, which is widely used in various electronic devices and constitutes a circuit of a printed circuit board that is immersed in an inert cooling liquid. A semiconductor package is immersed horizontally in a cooling liquid. At the same time, air bubbles generated from the surface of the heat sink are allowed to convect with the cooling liquid to prevent film boiling on the surface of the heat sink, and the aim is to provide a semiconductor package for immersion cooling with high cooling efficiency. A heat sink having the above-mentioned shape and excellent thermal conductivity is attached to the back surface of the semiconductor chip mounted in the package.
本考案は、各種電子機器に広く使用されて不活性の冷却
液に浸漬するプリント板の回路を構成する浸漬冷却用半
導体パッケージに関する。The present invention relates to a semiconductor package for immersion cooling, which is widely used in various electronic devices and constitutes a circuit of a printed board which is immersed in an inert cooling liquid.
最近、特に大型電算機等に装着されるプリント板は大型
化，高密度化され、一方では実装される半導体チップも
更に高密度集積化されてその発熱量が増大しており、そ
の半導体チップ（以下素子と略称する）の冷却性能に対
する要求も大変厳しいものとなっている。Recently, especially printed boards mounted on large-scale computers and the like have become larger in size and higher in density, and on the other hand, the mounted semiconductor chips have been further integrated at a higher density and their heat generation amount has increased. The requirements for the cooling performance of the element (hereinafter abbreviated as “element”) are also very strict.
その対策として、不活性の冷却液にプリント板を直接浸
漬して冷却する冷却効率の高い浸漬液冷方法が採用され
ているが、素子の発熱が多い時には半導体パッケージの
表面において発生する冷却液の気泡が互いに融合して大
きな気泡となり、その大きな気泡によりの半導体パッケ
ージの表面が全てが覆われて蒸気膜により断熱されて、
その断熱により半導体パッケージの冷却効率が激減して
いる。そのため表面に発生した気泡を容易に離脱させ
て、常に高い冷却効率を有する新しい浸漬冷却用半導体
パッケージが要求されている。As a countermeasure against this, a high-efficiency immersion liquid cooling method is adopted, in which the printed board is directly immersed in an inert cooling liquid to cool, but when the heat of the element is high, the cooling liquid generated on the surface of the semiconductor package The bubbles fuse with each other to form large bubbles, and the large bubbles cover the entire surface of the semiconductor package and are insulated by the vapor film.
Due to the heat insulation, the cooling efficiency of the semiconductor package is drastically reduced. Therefore, there is a demand for a new semiconductor package for immersion cooling which has a high cooling efficiency by easily removing bubbles generated on the surface.
従来広く使用されている半導体パッケージは、第４図に
示すように例えばセラミックよるパッケージ２の孔にマ
ウントして複数本のリード３と接続した素子１の背面
に、前記孔を封止できる大きさの正方形平板に成形した
熱伝導の優れた，例えば銅板よりなるヒートシンク４を
同じく熱伝導の優れた接着剤で貼着して、パッケージ２
のリード３側開口部をキャップ５により封止し、発熱し
た素子１の熱をヒートシンク４に伝導して放熱するよう
に構成されている。As shown in FIG. 4, a semiconductor package which has been widely used in the past has a size such that the hole can be sealed on the back surface of the element 1 which is mounted in a hole of a package 2 made of ceramic and connected to a plurality of leads 3. The heat sink 4 made of, for example, a copper plate, which is formed into a square flat plate with a good heat conductivity, is attached with an adhesive that also has a good heat conductivity to form the package 2
The lead 3 side opening is sealed with a cap 5, and the heat of the generated element 1 is conducted to the heat sink 4 and radiated.
以上説明した従来の半導体パッケージで問題となるの
は、第５図（ａ）に示す基板６に実装した素子１に電圧
を印加すると、先ずヒートシンク４の表面に自然対流が
生じ、ついで表面のキズや凹凸，リード３の接続部など
を核として核沸騰と呼ばれる沸騰がはじまり熱伝達の効
率は著しく向上する。さらに発熱量が増えて行くと気泡
の発生量が増加するが、第５図の（ａ）に示すようにヒ
ートシンク４の表面が垂直の場合はその気泡７は冷却液
６内を上昇する。しかし、（ｂ）図に示すようにヒート
シンク４の表面が水平の場合には、ヒートシンク４の表
面において発生する気泡７が互いに融合して大きな気泡
７となる状態が生じ、その上部の２点鎖線で示す範囲の
冷却液の対流がなくなって、ついにはヒートシンク４の
表面が全て気泡７で覆われる膜沸騰が発生して断熱され
るために冷却効率が激減するという問題が生じている。The problem with the conventional semiconductor package described above is that when a voltage is applied to the device 1 mounted on the substrate 6 shown in FIG. 5A, natural convection first occurs on the surface of the heat sink 4, and then scratches on the surface occur. Boiling called nucleate boiling starts with the unevenness, the concavities and convexities, the connecting portion of the leads 3, etc. as nuclei, and the efficiency of heat transfer is significantly improved. As the amount of heat generation further increases, the amount of bubbles generated increases, but when the surface of the heat sink 4 is vertical as shown in FIG. 5A, the bubbles 7 rise in the cooling liquid 6. However, when the surface of the heat sink 4 is horizontal as shown in FIG. 7B, the bubbles 7 generated on the surface of the heat sink 4 are fused with each other to form a large bubble 7, and the two-dot chain line on the upper side thereof. There is a problem that the convection of the cooling liquid in the range shown by is eliminated, and finally the surface of the heat sink 4 is entirely covered with the bubbles 7 to cause film boiling and heat insulation, so that the cooling efficiency is drastically reduced.
本考案は上記ような問題点に鑑み、冷却液ヘLSiを水平
に浸漬した時にそのヒートシンクの表面より発する気泡
を冷却液と共に対流させて、ヒートシンク表面の膜沸騰
発生を防止することができて冷却効率が高い浸漬冷却用
半導体パッケージの提供を目的とする。In view of the above problems, the present invention allows the bubbles generated from the surface of the heat sink when the LSi is immersed horizontally into the cooling liquid to convect with the cooling liquid to prevent film boiling on the surface of the heat sink. An object is to provide a highly efficient semiconductor package for immersion cooling.
本考案は、第１図（ａ）に示すようにリード３を配設し
たパッケージ２の素子１に背面に、第１図（ａ）に示す
角錐，または、第２図の（ａ）（ｂ）に示すような半球
状，或いは円錐に成形した熱伝導性の優れた金属よりな
るヒートシンク14を貼着される。According to the present invention, the device 1 of the package 2 having the leads 3 arranged as shown in FIG. 1 (a) is provided on the back surface, the pyramid shown in FIG. 1 (a), or (a) (b) of FIG. ) A heat sink 14 made of a metal having excellent heat conductivity, which is formed into a hemispherical shape or a conical shape, is attached.
本考案では、実装したLSiが水平となるように冷却液に
基板６を浸漬してその素子１に電圧を印加すると、素子
１の発熱により発生した気泡７はヒートシンク14の斜面
を伝わって上昇するとともに、その上昇により周囲の冷
却液をで示すようにヒートシンク14の外周から中央に
流動させて上昇する対流が発生するので、常に冷却液が
ヒートシンク14の表面に接触して膜沸騰を防止すること
が可能となる。In the present invention, when the substrate 6 is immersed in the cooling liquid so that the mounted LSi is horizontal and a voltage is applied to the element 1, the bubbles 7 generated by the heat generation of the element 1 propagate up the slope of the heat sink 14 and rise. At the same time, the rise causes convection that flows from the outer periphery of the heat sink 14 to the center and rises as shown by the surrounding cooling liquid, so that the cooling liquid always contacts the surface of the heat sink 14 to prevent film boiling. Is possible.
尚、半導体パッケージを垂直に浸漬した場合において
は、ヒートシンク14の表面で発生した気泡７は従来と同
様に冷却液の中を上昇するので、常に冷却液がヒートシ
ンク14の全表面に接触しているので高い冷却効率を維持
することが可能となる。When the semiconductor package is vertically dipped, the bubbles 7 generated on the surface of the heat sink 14 rise in the cooling liquid as in the conventional case, so that the cooling liquid is always in contact with the entire surface of the heat sink 14. Therefore, it is possible to maintain high cooling efficiency.
以下第１図乃至第３図について本考案の実施例を説明す
る。An embodiment of the present invention will be described below with reference to FIGS.
第１図は本実施例による浸漬冷却用半導体パッケージを
示す斜視図，第２図はヒートシンクを示す斜視図，第３
図は本実施例の作用を説明する側面図を示し、図中にお
いて、第４図と同一部材には同一記号が付してあるが、
その他の14は電源印加により発熱した素子を熱を放熱す
るヒートシンクである。FIG. 1 is a perspective view showing a semiconductor package for immersion cooling according to this embodiment, FIG. 2 is a perspective view showing a heat sink, and FIG.
The figure shows a side view for explaining the operation of the present embodiment. In the figure, the same members as those in FIG. 4 are designated by the same symbols,
The other 14 is a heat sink that dissipates heat from the element that has generated heat when power is applied.
ヒートシンク14は、第１図に示すように素子１と対向す
る側を平面とし、その反対側を角錐状に成形した熱伝導
性の優れた金属，例えば銅合金より形成したものであ
る。As shown in FIG. 1, the heat sink 14 has a flat surface on the side facing the element 1 and a pyramid shaped metal on the opposite side, which is formed of a metal having excellent thermal conductivity, such as a copper alloy.
上記部材を使用した浸漬冷却用半導体パッケージは、第
１図（ａ）に示すようにリード３を配設したパッケージ
２にマウントした素子１に背面に、ヒートシンク14の平
面側を熱伝導の優れた接着剤により貼着し、パッケージ
２のリード３側開口部をキャップ５で封止している。The immersion cooling semiconductor package using the above-mentioned members has excellent heat conduction on the back side of the element 1 mounted on the package 2 having the leads 3 arranged thereon and on the flat side of the heat sink 14 as shown in FIG. 1 (a). It is attached by an adhesive and the opening of the package 2 on the lead 3 side is sealed with a cap 5.
その結果、水平となるように冷却液に浸漬した素子１の
発熱によりヒートシンク14の表面で生じた気泡７は、そ
の斜面を伝わって上昇するとともに周囲の冷却液がヒー
トシンク14の外周から中央に流動して上昇し、常に冷却
液がヒートシンク14表面を接触して冷却するので膜沸騰
の発生がなくなって高い冷却効率を維持することができ
る。As a result, the bubbles 7 generated on the surface of the heat sink 14 due to the heat generation of the element 1 immersed horizontally in the cooling liquid ascend along the slopes thereof and the surrounding cooling liquid flows from the outer periphery of the heat sink 14 to the center. As a result, the cooling liquid constantly contacts and cools the surface of the heat sink 14, so that film boiling does not occur and high cooling efficiency can be maintained.
尚、ヒートシンク14は第２図の（ａ）（ｂ）に示すよう
に方形板に半球，または円錐を載置した状態の形状に形
成した、他の実施例においても上記と同様の冷却効果が
得られる。The heat sink 14 is formed in a shape in which a hemisphere or a cone is placed on a square plate as shown in FIGS. 2 (a) and 2 (b). In other embodiments, the same cooling effect as above is obtained. can get.
以上の説明から明らかなように本考案によれば極めて簡
単な構成で、ヒートシンクの表面から発する気泡の膜沸
騰を防止することができて冷却効率が高い等の利点があ
り、著しい経済的及び、信頼性向上の効果が期待できる
浸漬冷却用半導体パッケージを提供することができる。As is apparent from the above description, according to the present invention, it is possible to prevent film boiling of bubbles generated from the surface of the heat sink with a very simple structure and to have high cooling efficiency. It is possible to provide a semiconductor package for immersion cooling, which can be expected to improve reliability.
第１図は本考案の一実施例による浸漬冷却用半導体パッ
ケージを示す斜視図、 第２図は他の実施例のヒートシンクを示す斜視図、 第３図は本実施例の作用説明図、 第４図は従来の半導体パッケージを示す図 第５図は課題を示す側面図である。 図において、 １は素子、２はパッケージ、３はリード、５はキャッ
プ、６は基板、７は気泡、14はヒートシンク、 を示す。FIG. 1 is a perspective view showing a semiconductor package for immersion cooling according to an embodiment of the present invention, FIG. 2 is a perspective view showing a heat sink of another embodiment, and FIG. 3 is an operation explanatory view of this embodiment. FIG. 5 is a diagram showing a conventional semiconductor package. FIG. 5 is a side view showing a problem. In the figure, 1 is an element, 2 is a package, 3 is a lead, 5 is a cap, 6 is a substrate, 7 is a bubble, and 14 is a heat sink.
Claims (1)
形して熱伝導性の優れたヒートシンク（14）を、パッケ
ージ（２）にマウントした半導体チップ（１）の背面に
貼着してなることを特徴とする浸漬冷却用半導体パッケ
ージ。1. A heat sink (14) having a high thermal conductivity, which is formed so as to be gradually higher from the peripheral edge toward the center, is attached to the back surface of a semiconductor chip (1) mounted on a package (2). A semiconductor package for immersion cooling, which is characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988115465U JPH0719157Y2 (en) | 1988-08-31 | 1988-08-31 | Semiconductor package for immersion cooling |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988115465U JPH0719157Y2 (en) | 1988-08-31 | 1988-08-31 | Semiconductor package for immersion cooling |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0236047U JPH0236047U (en) | 1990-03-08 |
| JPH0719157Y2 true JPH0719157Y2 (en) | 1995-05-01 |
Family
ID=31357148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988115465U Expired - Lifetime JPH0719157Y2 (en) | 1988-08-31 | 1988-08-31 | Semiconductor package for immersion cooling |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0719157Y2 (en) |
-
1988
- 1988-08-31 JP JP1988115465U patent/JPH0719157Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0236047U (en) | 1990-03-08 |
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