JPH07183754A - Lead-out electrode structure for piezoelectric parts - Google Patents
Lead-out electrode structure for piezoelectric partsInfo
- Publication number
- JPH07183754A JPH07183754A JP34654293A JP34654293A JPH07183754A JP H07183754 A JPH07183754 A JP H07183754A JP 34654293 A JP34654293 A JP 34654293A JP 34654293 A JP34654293 A JP 34654293A JP H07183754 A JPH07183754 A JP H07183754A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- lead
- piezoelectric
- thin film
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上利用分野】本発明は圧電部品の電極構造に関
し、殊に圧電部品パッケージ内外の電気的接続を行なう
引き出し電極の構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrode structure of a piezoelectric component, and more particularly to a structure of a lead electrode for electrically connecting the inside and outside of a piezoelectric component package.
【０００２】[0002]
【従来の技術】圧電部品は例えばバルク波を利用する圧
電共振子の場合、形状、厚さ及び表面状態を所定の寸法
に加工した圧電基板両面に夫々励振電極及び該励振電極
から前記圧電基板の端縁に向けて延びる電極リード部を
付着した圧電共振子をリード線が気密貫通している金属
ベース中に前記リード線に取り付け電気的接続及び機械
的保持を行ない最後に封止缶を被せて該封止缶と前記金
属ベースとを抵抗溶接し圧電共振子をパッケージ内に密
封するのが一般的であった。2. Description of the Related Art Piezoelectric components are, for example, in the case of a piezoelectric resonator utilizing a bulk wave, an excitation electrode is formed on each side of a piezoelectric substrate whose shape, thickness and surface condition are processed into predetermined dimensions, and the excitation electrode is connected to the piezoelectric substrate. A piezoelectric resonator having an electrode lead portion extending toward the edge is attached to the lead wire in a metal base in which the lead wire is airtightly penetrated, electrical connection and mechanical holding are performed, and finally a sealing can is covered. It has been general that the sealing can and the metal base are resistance-welded to seal the piezoelectric resonator in the package.
【０００３】近年、電子機器の小型化に伴い圧電部品の
小型化及び表面実装化の要求が高まっており、様々な小
型圧電部品の構造が提案されている。図３（ａ）及び
（ｂ）は表面実装型圧電部品の一例の構造を示す図であ
って、（ａ）は外観斜視図、（ｂ）はＡ―Ａ′断面図で
ある。In recent years, along with the miniaturization of electronic devices, there has been an increasing demand for miniaturization and surface mounting of piezoelectric components, and various structures of compact piezoelectric components have been proposed. 3 (a) and 3 (b) are views showing the structure of an example of the surface mount type piezoelectric component, FIG. 3 (a) is an external perspective view, and FIG. 3 (b) is an AA 'sectional view.
【０００４】即ち、圧電基板の両面に夫々励振電極（図
示しない）と該励振電極から該圧電基板の端部まで延び
る電極リード部（図示しない）を付着した圧電共振子１
を、セラミック、ガラス等の絶縁性材料からなるベース
２に固定された、りん青銅、洋白、ステンレス等の導電
性材料の薄板からなるサポート３，４に導電性接着剤
（図示しない）により接着し電気的接続及び機械的保持
をする。前記ベース２には前記サポート３，４固定箇所
から該ベース２端部まで引き出し電極５，６が付着され
ており、前記圧電共振子１を密封するようケース７を低
融点ガラス８により接着封止しても、圧電共振子１とケ
ース７外部との導通を確保できるよう構成したものであ
る。尚、該ケース７は低融点ガラス８によりベース２と
接着可能なら金属等の導電性材料、或はセラミック、ガ
ラス等の絶縁性材料のいずれでもよい。That is, the piezoelectric resonator 1 is provided with an excitation electrode (not shown) and an electrode lead portion (not shown) extending from the excitation electrode to the end of the piezoelectric substrate on both sides of the piezoelectric substrate.
With a conductive adhesive (not shown) fixed to a base 2 made of an insulating material such as ceramic or glass, and to a support 3 or 4 made of a thin plate of a conductive material such as phosphor bronze, nickel silver, or stainless steel. Electrical connection and mechanical retention. Lead electrodes 5, 6 are attached to the base 2 from the fixing positions of the supports 3, 4 to the ends of the base 2, and a case 7 is adhesively sealed with a low melting point glass 8 so as to seal the piezoelectric resonator 1. Even in this case, the piezoelectric resonator 1 and the outside of the case 7 can be electrically connected. The case 7 may be made of a conductive material such as metal, or an insulating material such as ceramic or glass as long as it can be bonded to the base 2 by the low melting point glass 8.
【０００５】前記低融点ガラス８とは、鉛の酸化物とホ
ウ素の酸化物を樹脂に混入してペースト状としたものを
スクリーン印刷手法等によりベース２とケース７の接合
部分に塗布した後、４００℃以上の温度にて加熱処理を
施すことによって樹脂を除去して溶融したガラスのみと
し、これを常温まで冷却することによりガラスを固体化
して被接着物を接着固定するものである。The low-melting glass 8 is a paste in which a lead oxide and a boron oxide are mixed in a resin, and the paste is applied to the joint portion between the base 2 and the case 7 by a screen printing method or the like. The resin is removed by heating at a temperature of 400 ° C. or higher to leave only the molten glass, and the glass is cooled to room temperature to solidify the glass and fix the adherend.
【０００６】前記引き出し電極５，６は真空蒸着等の薄
膜形成技術によりベース２に付着した金属薄膜とするの
が一般的でありその材料は安定且つ導電性の高い金が適
している。但し、周知のように前記ベース２に金単層を
付着しても十分な付着強度を得ることができないため、
図４に示す如く、下地としてニッケル層９を付着した後
金層１０を付着して２層とした薄膜構造とし、該金層１
０の付着強度を高くすることが一般的である。The extraction electrodes 5 and 6 are generally metal thin films adhered to the base 2 by a thin film forming technique such as vacuum vapor deposition, and gold, which is stable and has high conductivity, is suitable for the material. However, as is well known, even if a gold monolayer is attached to the base 2, sufficient adhesion strength cannot be obtained.
As shown in FIG. 4, a nickel layer 9 is deposited as a base and then a gold layer 10 is deposited to form a two-layer thin film structure.
It is common to increase the adhesive strength of 0.
【０００７】しかしながら、例えば前記金属薄膜の膜厚
をニッケル層９が５０〜１００オングストローム、金層
１０が５００〜２０００オングストロームとしたとき、
製造工程に於いてベース２とケース７を４００℃以上の
温度で加熱処理を施すことにより、低融点ガラス８と接
する領域の引き出し電極５，６が該低融点ガラス８中に
拡散溶解するという現象が発生し、最悪の場合前記引き
出し電極５，６が切断して外部から圧電共振子への電気
的接続が不可能となるという欠陥があった。However, for example, when the film thickness of the metal thin film is 50 to 100 angstroms for the nickel layer 9 and 500 to 2000 angstroms for the gold layer 10,
A phenomenon in which the extraction electrodes 5 and 6 in the region in contact with the low-melting glass 8 are diffused and dissolved in the low-melting glass 8 by heat-treating the base 2 and the case 7 at a temperature of 400 ° C. or higher in the manufacturing process. However, in the worst case, the extraction electrodes 5 and 6 are cut off, making it impossible to electrically connect the piezoelectric resonator from the outside.
【０００８】[0008]
【発明の目的】本発明は上述した如き従来の圧電部品の
欠陥を除去すべくなされたものであって、製造時に４０
０℃以上の加熱処理を施しても引き出し電極が低融点ガ
ラスに拡散溶解することなく、前記引き出し電極を切断
する恐れのない薄膜構造を有する圧電部品を提供するこ
とを目的とする。SUMMARY OF THE INVENTION The present invention has been made to eliminate the defects of the conventional piezoelectric component as described above.
An object of the present invention is to provide a piezoelectric component having a thin film structure in which the extraction electrode is not diffused and dissolved in the low melting point glass even if the heat treatment is performed at 0 ° C. or higher, and the extraction electrode is not likely to be cut.
【０００９】[0009]
【発明の概要】上述の目的を達成するため本発明に係わ
る表面実装型圧電部品の構造は、所定のキャビティを有
するパッケージ内に低融点ガラスを用いて圧電素子を封
入した圧電部品に於いて、パッケージ外部と圧電素子の
間を電気的に接続するための引き出し電極を設け、その
少なくとも前記低融点ガラスと接触する領域の表面にク
ロムのコーティングを施す、或は前記引き出し電極が最
下層よりニッケル層、金層、ニッケル層、クロム層の順
で構成した４層の薄膜構造であることを特徴とする圧電
部品の引き出し電極の構造とする。SUMMARY OF THE INVENTION To achieve the above object, the structure of a surface mount type piezoelectric component according to the present invention is a piezoelectric component in which a piezoelectric element is enclosed in a package having a predetermined cavity by using a low melting point glass. A lead electrode for electrically connecting the outside of the package and the piezoelectric element is provided, and at least the surface of the region in contact with the low melting point glass is coated with chromium, or the lead electrode is a nickel layer from the bottom layer. The lead electrode structure of the piezoelectric component has a four-layer thin film structure including a gold layer, a nickel layer, and a chromium layer in this order.
【００１０】[0010]
【発明の実施例】以下、本発明を実施例を示す図面に基
づいて詳細に説明する。図１は本発明の一実施例の薄膜
構造を示す断面図である。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will now be described in detail with reference to the drawings showing the embodiments. FIG. 1 is a sectional view showing a thin film structure according to an embodiment of the present invention.
【００１１】即ち、ベース２に付着する引き出し電極
５，６をベース２の表面から順にニッケル層１１、金層
１２、クロム層１３とした３層の薄膜構造とするもので
ある。該３層の金属薄膜の膜厚は例えば、ニッケル層１
１を５０〜２００オングストローム、金層１２を５００
〜１０００オングストローム、クロム層１３を５０〜２
００オングストロームとする。That is, the extraction electrodes 5 and 6 attached to the base 2 have a three-layer thin film structure including a nickel layer 11, a gold layer 12, and a chromium layer 13 in this order from the surface of the base 2. The thickness of the three-layer metal thin film is, for example, nickel layer 1
1 to 50-200 angstrom, gold layer 12 to 500
~ 1000 angstrom, chromium layer 13 50-2
00 angstrom.
【００１２】上述した如く構成することにより、ニッケ
ル層１１と金層１２が低融点ガラス中に拡散溶解するこ
とのないようにクロム層１３が障壁として作用し、前記
引き出し電極５，６を切断することなく圧電部品と電子
回路の電気的接続を確実なものとすることができる。With the above structure, the chromium layer 13 acts as a barrier so that the nickel layer 11 and the gold layer 12 do not diffuse and dissolve in the low melting point glass, and the lead electrodes 5, 6 are cut. The electrical connection between the piezoelectric component and the electronic circuit can be ensured without any trouble.
【００１３】ところが、上述した如き構成では製造工程
に於いて、４００℃以上の温度に加熱することによって
引き出し電極５，６の金層１２とクロム層１３が合金化
し、上述した厚みの薄膜構造で実験したところ該引き出
し電極５，６の抵抗率が加熱前には約５μΩ・ｃｍであ
ったのに対して加熱後には約３５μΩ・ｃｍへ上昇する
現象が見られた。そこで図２に示す如く、金層１２とク
ロム層１３の間に第２のニッケル層１４を設けて４層の
薄膜構造とすることにより、第２のニッケル層１４が障
壁として作用して、金層１２とクロム層１３が合金化す
ることがなくなる。例えば、前記第２のニッケル層１４
の膜厚を５０〜１００オングストロームとすることによ
り、金属薄膜の抵抗率が加熱後であっても約２０μΩ・
ｃｍとなり、前記引き出し電極５，６の抵抗率の上昇を
抑えることも可能となる。However, in the structure as described above, the gold layer 12 and the chromium layer 13 of the extraction electrodes 5, 6 are alloyed by heating to a temperature of 400 ° C. or higher in the manufacturing process, and the thin film structure having the above-mentioned thickness is obtained. As a result of an experiment, it was observed that the resistivity of the extraction electrodes 5 and 6 was about 5 μΩ · cm before heating, but increased to about 35 μΩ · cm after heating. Therefore, as shown in FIG. 2, by providing the second nickel layer 14 between the gold layer 12 and the chromium layer 13 to form a four-layer thin film structure, the second nickel layer 14 acts as a barrier, and The layer 12 and the chromium layer 13 are not alloyed. For example, the second nickel layer 14
By setting the film thickness of 50 to 100 Å, the resistivity of the metal thin film is about 20 μΩ even after heating.
cm, and it is possible to suppress the increase in the resistivity of the extraction electrodes 5 and 6.
【００１４】尚、引き出し電極５，６を真空蒸着等の薄
膜形成技術によりベース２に付着するものとして説明し
たが、金属薄膜形成方法としてスパッタ、メッキ等を適
用して構わない。更に、引き出し電極５，６形成時にマ
スク等を利用して低融点ガラス８を塗布する領域のみを
３層或は４層の薄膜構造とし、その他の箇所は従来のニ
ッケル層９と金層１０の２層からなる薄膜構造としても
よい。Although the extraction electrodes 5 and 6 have been described as being attached to the base 2 by a thin film forming technique such as vacuum deposition, sputtering, plating or the like may be applied as a metal thin film forming method. Further, when forming the extraction electrodes 5 and 6, only a region to which the low melting point glass 8 is applied by using a mask or the like has a three-layer or four-layer thin film structure, and other portions are formed by the conventional nickel layer 9 and gold layer 10. A thin film structure including two layers may be used.
【００１５】以上本発明は水晶基板を用いた水晶振動
子、モノリシック・クリスタル・フィルタ（ＭＣＦ）を
含む共振子、或は水晶以外の圧電基板を用いた共振子や
部分電極を二分割した構成の二重モードフィルタの如き
共振子、バルク波以外の表面弾性波（ＳＡＷ）等を用い
た共振子及びフィルタに適用してもよい。As described above, the present invention has a structure in which a crystal unit using a crystal substrate, a resonator including a monolithic crystal filter (MCF), or a resonator using a piezoelectric substrate other than crystal or a partial electrode is divided into two. It may be applied to a resonator such as a dual mode filter, a resonator using a surface acoustic wave (SAW) other than the bulk wave, and a filter.
【００１６】[0016]
【発明の効果】本発明は、以上説明した如く構成するも
のであるから、圧電部品の製造工程に於いて、引き出し
電極が切断することにより歩留まりが低下するという欠
陥の無い圧電部品を極めて安価に生産することが可能と
なると共に、完成した圧電部品を実装する電子回路の低
価格化に著しい効果を発揮するものである。EFFECT OF THE INVENTION Since the present invention is constructed as described above, a piezoelectric component having no defect that yield is reduced due to cutting of the lead electrode in the manufacturing process of the piezoelectric component is extremely inexpensive. Not only can it be produced, but it will also be extremely effective in lowering the price of electronic circuits for mounting completed piezoelectric components.
【図１】本発明に係わる薄膜構造の一実施例を示す断面
図FIG. 1 is a sectional view showing an embodiment of a thin film structure according to the present invention.
【図２】本発明に係わる薄膜構造の第２の実施例を示す
断面図FIG. 2 is a sectional view showing a second embodiment of the thin film structure according to the present invention.
【図３】（ａ）及び（ｂ）は従来の圧電部品を示す外観
斜視図及び断面図3 (a) and 3 (b) are external perspective views and cross-sectional views showing a conventional piezoelectric component.
【図４】従来の引き出し電極の薄膜構造を示す断面図FIG. 4 is a sectional view showing a thin film structure of a conventional extraction electrode.
２………ベース ５，６………引き出し電極 １１………ニッケル層 １２………金層 １３………クロム層 １４………第２のニッケル層 2 ... Base 5, 6 ... Extractor electrode 11 Nickel layer 12 Gold layer 13 Chrome layer 14 Second nickel layer
Claims (2)
低融点ガラスを用いて圧電素子を封入した圧電部品に於
いて、パッケージ外部と圧電素子の間を電気的に接続す
るための引き出し電極を設け、その少なくとも前記低融
点ガラスと接触する領域の表面にクロムのコーティング
を施したことを特徴とする圧電部品の引き出し電極構
造。1. In a piezoelectric component in which a piezoelectric element is enclosed by using a low melting point glass in a package having a predetermined cavity, an extraction electrode for electrically connecting the outside of the package and the piezoelectric element is provided, A lead electrode structure for a piezoelectric component, characterized in that at least a surface of a region in contact with the low melting point glass is coated with chromium.
層、金層、ニッケル層、クロム層の順で構成した４層の
薄膜構造であることを特徴とする請求項１記載の圧電部
品の引き出し電極構造。2. The lead electrode of the piezoelectric component according to claim 1, wherein the lead electrode has a four-layer thin film structure in which a nickel layer, a gold layer, a nickel layer, and a chromium layer are formed in this order from the bottom layer. Construction.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34654293A JPH07183754A (en) | 1993-12-21 | 1993-12-21 | Lead-out electrode structure for piezoelectric parts |
| JP25477794A JPH07307638A (en) | 1993-12-21 | 1994-09-22 | Draw out electrode structure for piezoelectric parts |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34654293A JPH07183754A (en) | 1993-12-21 | 1993-12-21 | Lead-out electrode structure for piezoelectric parts |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07183754A true JPH07183754A (en) | 1995-07-21 |
Family
ID=18384134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34654293A Pending JPH07183754A (en) | 1993-12-21 | 1993-12-21 | Lead-out electrode structure for piezoelectric parts |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07183754A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012054893A (en) * | 2010-09-03 | 2012-03-15 | Nippon Dempa Kogyo Co Ltd | Tuning fork type crystal vibrating piece and crystal device |
-
1993
- 1993-12-21 JP JP34654293A patent/JPH07183754A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012054893A (en) * | 2010-09-03 | 2012-03-15 | Nippon Dempa Kogyo Co Ltd | Tuning fork type crystal vibrating piece and crystal device |
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