JPH07183240A - Manufacture of semiconductor manufacturing jig - Google Patents
Manufacture of semiconductor manufacturing jigInfo
- Publication number
- JPH07183240A JPH07183240A JP34772893A JP34772893A JPH07183240A JP H07183240 A JPH07183240 A JP H07183240A JP 34772893 A JP34772893 A JP 34772893A JP 34772893 A JP34772893 A JP 34772893A JP H07183240 A JPH07183240 A JP H07183240A
- Authority
- JP
- Japan
- Prior art keywords
- members
- quartz glass
- semiconductor manufacturing
- jig
- purified
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B23/00—Re-forming shaped glass
- C03B23/20—Uniting glass pieces by fusing without substantial reshaping
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B32/00—Thermal after-treatment of glass products not provided for in groups C03B19/00, C03B25/00 - C03B31/00 or C03B37/00, e.g. crystallisation, eliminating gas inclusions or other impurities; Hot-pressing vitrified, non-porous, shaped glass products
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Glass Melting And Manufacturing (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体製造用治具の製造
方法に関し、特にハロゲン含有ガスを用いて石英ガラス
の表面の不純物を除去する半導体製造用治具の製造方法
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor manufacturing jig, and more particularly to a method for manufacturing a semiconductor manufacturing jig which removes impurities on the surface of quartz glass by using a halogen-containing gas.
【０００２】[0002]
【従来の技術】従来、例えば特開平２−３０６２８号公
報に示されるように、天然シリカ質粉末原料をハロゲン
あるいはその化合物を含む調整雰囲気中で１０００〜１
２００℃で加熱処理することで、高純度の石英ガラス用
原料が得られることが知られている。この方法によれ
ば、高純度な石英ガラス用原料を得ることができるが、
例えばこの原料を用いて石英ガラスの管状体を得よう
と、通常の管引き法を行うと炉内雰囲気から金属不純物
が石英ガラス材料中に混入する。また複雑な形状体を得
ようと酸水素ガスバ−ナ法を行うと、前記ガスバ−ナか
ら金属不純物が石英ガラス材料中に混入する。2. Description of the Related Art Conventionally, as disclosed in, for example, Japanese Patent Laid-Open No. 30628/1990, a natural siliceous powder raw material is used in a controlled atmosphere containing halogen or its compound in an amount of 1000 to 1: 1.
It is known that a high-purity raw material for quartz glass can be obtained by heat treatment at 200 ° C. According to this method, a high-purity raw material for quartz glass can be obtained,
For example, in order to obtain a quartz glass tubular body using this raw material, when a normal tube drawing method is performed, metallic impurities are mixed into the quartz glass material from the atmosphere in the furnace. Further, when the oxyhydrogen gas burner method is performed to obtain a complex shaped body, metal impurities are mixed into the quartz glass material from the gas burner.
【０００３】そのため、最終的な半導体製造用治具とし
ては、充分な純度を得ることができなかった。特に、Ｎ
ａ、Ｋ、Ｃａ等のアルカリ金属、アルカリ土類金属によ
る石英ガラス材料の汚染が顕著であった。これを解決す
るために、従来より最終製品段階でハロゲンガスによる
純化処理が行われてた。Therefore, it was not possible to obtain sufficient purity as a final jig for semiconductor manufacturing. In particular, N
Contamination of the quartz glass material by alkali metals such as a, K and Ca and alkaline earth metals was remarkable. In order to solve this, purification treatment with halogen gas has been conventionally performed in the final product stage.
【０００４】[0004]
【発明が解決しようとする課題】しかし、半導体製造用
治具組立後の最終製品段階で、ハロゲンガスによる高温
純化処理を行うと変形し、所定の形状のものが得られな
いという課題があった。具体的に例示すれば、複数の半
導体ウエハを所定間隔で立設保持するための所定の幅、
深さの溝が形成された４本の支持棒をもつボ−トを最終
製品段階で処理すると、高温処理のため溝幅等の均一性
が損なわれたり、また支持棒の変形等で同一平面上の４
つの溝の位置がずれてしまい、ウエハを適切に立設する
ことができなくなるという技術的課題があった。また、
最終製品をハロゲンガスで純化処理するため、それを収
納できる大きな炉が必要であり、結局半導体製造用治具
の価格を高いものとしていた。However, there has been a problem that when a high temperature purification treatment with a halogen gas is carried out in the final product stage after the jig for semiconductor manufacturing is assembled, it is deformed and a predetermined shape cannot be obtained. . Specifically, a predetermined width for vertically holding a plurality of semiconductor wafers at predetermined intervals,
When a boat having four support rods with deep grooves is processed in the final product stage, the uniformity of the groove width is impaired due to high temperature treatment, and the support rods are deformed to form the same plane. Top 4
There is a technical problem that the positions of the two grooves are displaced and the wafer cannot be properly erected. Also,
Since the final product is purified with halogen gas, a large furnace that can store it is required, and the price of the jig for semiconductor manufacturing is high.
【０００５】本発明は上記技術的課題を解決するために
なされた発明であり、半導体製造用治具として充分な純
度を得ることができ、また部材の変形がなく所定の寸法
形状に仕上げることができ、しかも安価な半導体製造用
治具が得られる半導体製造用治具の製造方法を提供する
ことを目的とする。The present invention has been made to solve the above technical problems, and it is possible to obtain sufficient purity as a semiconductor manufacturing jig, and to finish the member into a predetermined size and shape without deformation. An object of the present invention is to provide a method for manufacturing a semiconductor manufacturing jig, which is capable of obtaining a semiconductor manufacturing jig that is inexpensive.
【０００６】[0006]
【課題を解決するための手段】本発明にかかる半導体製
造用治具の製造方法は、石英ガラスから半導体製造用治
具を構成する部材を製造する工程と、前記部材を炉心管
内セットし、所定の処理条件下でハロゲン含有ガスを炉
に供給し前記部材を純化する工程と、前記純化した部材
を組立て半導体製造用治具とする組立て工程とからなる
ことを特徴とする。A method of manufacturing a semiconductor manufacturing jig according to the present invention comprises a step of manufacturing a member constituting a semiconductor manufacturing jig from quartz glass, setting the member in a core tube, and then performing a predetermined process. Under the processing conditions, the halogen-containing gas is supplied to the furnace to purify the member, and the purified member is assembled into a semiconductor manufacturing jig.
【０００７】[0007]
【作用】本発明にかかる半導体製造用治具の製造方法
は、半導体製造用治具を構成する部材を製造した後、そ
の部材を所定の処理条件下でハロゲン含有ガスにて、前
記部材を純化するため、また部材の変形がなく所定の寸
法形状に仕上げることができ、しかも安価な半導体製造
用治具が得られる。According to the method for manufacturing a semiconductor manufacturing jig of the present invention, after manufacturing a member constituting the semiconductor manufacturing jig, the member is purified with a halogen-containing gas under predetermined processing conditions. Therefore, it is possible to obtain a jig for semiconductor manufacturing which can be finished into a predetermined size and shape without deformation of members and which is inexpensive.
【０００８】[0008]
【実施例】本発明の実施例を図１に示す半導体ウエハボ
−トを例に説明する。まず、従来から知られている方法
で、天然水晶を粉砕後精製し各部材を溶融成形すること
により、半導体ウエハボ−トを構成する部材を製造す
る。半導体ウエハボ−トは、図に示されるように石英ガ
ラスの支持棒１，２，３と両側枠４，５とから構成され
ている。前記石英ガラスの支持棒１，２，３は、１辺が
１０mm、長さが４００mmの角柱状をなし、そしてこれら
の石英ガラスの支持棒１，２，３の両端には、円柱状の
柄１ａ、２ａ、３ａが一体に形成され、この柄１ａ、２
ａ、３ａの途中には略平行な２条の溝よりなる固定用係
止凹部（図示せず）が形成されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to the semiconductor wafer boat shown in FIG. First, by a conventionally known method, natural quartz is crushed and then purified, and each member is melt-molded to manufacture a member constituting a semiconductor wafer boat. As shown in the figure, the semiconductor wafer boat is composed of quartz glass support rods 1, 2 and 3 and both side frames 4 and 5. The support rods 1, 2 and 3 of the quartz glass have a prism shape with one side of 10 mm and a length of 400 mm, and the support rods 1, 2 and 3 of the quartz glass have a cylindrical handle at both ends. 1a, 2a, 3a are integrally formed, and the handles 1a, 2
In the middle of a and 3a, there is formed a locking recess (not shown) for fixing, which is formed by two grooves that are substantially parallel to each other.
【０００９】また、前記石英ガラスの支持棒１，２，３
の上面には、例えば巾０．５ｍｍ、深さ３ｍｍで、途中
まで約７０度のテーパー部を有する溝７が、約５ｍｍの
等間隔で多数形成されている。また、前記両側枠４，５
は板状に形成され、その所定の位置に前記石英ガラスの
支持棒１，２，３の柄１ａ、２ａ、３ａが、挿入される
取付孔（図示せず）が形成されている。The quartz glass support rods 1, 2, 3
A large number of grooves 7 having a width of 0.5 mm and a depth of 3 mm and a taper portion of about 70 degrees are formed at equal intervals of about 5 mm on the upper surface of the. Also, the both side frames 4, 5
Is formed in a plate shape, and a mounting hole (not shown) into which the handles 1a, 2a, 3a of the support rods 1, 2, 3 of the quartz glass are inserted is formed at a predetermined position thereof.
【００１０】尚、これらの部材の組み立ては、石英ガラ
ス板からなる両側枠４，５の取付孔（図示せず）に前記
石英ガラスの支持棒１，２，３を挿入し、両端において
側枠４，５に溶着された石英ガラス片からなる板状の係
止板６を、前記石英ガラスの支持棒１，２，３に形成さ
れた前記係止凹部に嵌め込み、石英ガラスの支持棒１，
２，３を所定の角度で両側枠４，５に固定することによ
って行われる。In order to assemble these members, the supporting rods 1, 2 and 3 of the quartz glass are inserted into the mounting holes (not shown) of the both side frames 4 and 5 made of quartz glass plates, and the side frames are provided at both ends. A plate-like locking plate 6 made of quartz glass pieces welded to 4,5 is fitted into the locking recesses formed in the supporting rods 1, 2 and 3 of the quartz glass, and the supporting rods 1 of the quartz glass 1
It is carried out by fixing 2, 3 to both side frames 4, 5 at a predetermined angle.
【００１１】また、金属含有量分析の結果、組立て前の
これらの部材中には、Ａｌ：１５ｐｐｍ、Ｎａ：１．０
ｐｐｍ、Ｋ：１．１ｐｐｍ、Ｃａ：１．５ｐｐｍ、Ｆ
ｅ：２ｐｐｍの不純物が含まれていた。このように構成
された部材、即ち、石英ガラスの支持棒１，２，３、側
枠４，５、を組立てる前に、図２、図３に示されるよう
な高純度黒鉛治具８、９に部材を載置し、炉心管内セッ
トして、塩化水素ガスを用いて純化処理する。As a result of metal content analysis, Al: 15 ppm and Na: 1.0 were found in these members before assembly.
ppm, K: 1.1 ppm, Ca: 1.5 ppm, F
e: Impurities of 2 ppm were contained. Before assembling the members thus configured, that is, the quartz glass support rods 1, 2, 3 and the side frames 4, 5, the high-purity graphite jigs 8, 9 as shown in FIGS. 2 and 3 are assembled. The member is placed on the core, set in the core tube, and purified using hydrogen chloride gas.
【００１２】その純化処理は、炉内温度１１５０℃と
し、ＨＣｌガスを０．３ｌ／min 及び０2 ガスを３ｌ／
min の条件下で炉に供給し、１００時間の処理を行っ
た。そして、これら部材を用いて組立てたボ−トの純度
及び前記組立てたボ−トの支持棒１の変形量を測定し
た。変形量の測定は、図４に示すように支持棒１の最大
変形量αを測定した。その測定結果を表１に示す。尚、
図４は組立てられたボ−トの支持棒部分のみの側面図で
ある。The purification treatment was carried out at a furnace temperature of 1150 ° C., with HCl gas at 0.3 l / min and O 2 gas at 3 l / min.
It was supplied to the furnace under the condition of min and treated for 100 hours. Then, the purity of the assembled boat and the amount of deformation of the support rod 1 of the assembled boat were measured using these members. The deformation amount was measured by measuring the maximum deformation amount α of the support rod 1 as shown in FIG. The measurement results are shown in Table 1. still,
FIG. 4 is a side view of only the support rod portion of the assembled boat.
【００１３】また、比較例１として、実施例と同様にし
て得られた石英ガラスの支持棒１，２，３と両側枠４，
５の各部材を組立後、実施例と同一の処理条件、即ち炉
内温度１１５０℃とし、ＨＣｌガスを０．３ｌ／min 及
び０2 ガスを３ｌ／min の条件下で炉に供給し、１００
時間その処理を行った。そして、組立てたボ−トの純度
及び組立てたボ−トの支持棒１の変形量を測定した。変
形量の測定は、図４に示すように支持棒１の最大変形量
αを測定した。その測定結果を表１に示す。As Comparative Example 1, quartz glass support rods 1, 2 and 3 and both side frames 4 obtained in the same manner as in Example 1 were used.
After assembling each member of No. 5 under the same processing conditions as in the embodiment, that is, the furnace temperature was 1150 ° C., HCl gas was supplied to the furnace under the conditions of 0.3 l / min and O 2 gas at 3 l / min, and 100
The processing was done for time. Then, the purity of the assembled boat and the amount of deformation of the support rod 1 of the assembled boat were measured. The deformation amount was measured by measuring the maximum deformation amount α of the support rod 1 as shown in FIG. The measurement results are shown in Table 1.
【００１４】また、比較例２は天然シリカ質粉末原料を
純化処理後、各構成部材を溶融成形し、組立て後ボ−ト
の純度及び支持棒１の変形量を測定した。即ち、天然シ
リカ質粉末原料を純化処理は、天然シリカ質原料を５０
０〜７００℃の温度で加熱後急冷し、得られた焼成物を
６０〜２００メッシュに粉砕し、次に上記焼成粉砕物を
フッ化水素酸と塩酸との混合液に浸漬し、そして上記浸
漬処理粉砕物をハロゲンもしくはその化合物を含む調整
雰囲気中で、１０００〜１２００℃の温度で加熱処理す
ることにより行う。その後溶融成形し、石英ガラスの支
持棒１，２，３と両側枠４，５の各部材を形成し、これ
ら構成部材を組み立てた。その測定結果を表１に示す。Further, in Comparative Example 2, after the natural siliceous powder raw material was purified, each constituent member was melt-molded, and after assembly, the purity of the boat and the deformation amount of the support rod 1 were measured. That is, the purification process of the natural siliceous powder raw material is performed by
After heating at a temperature of 0 to 700 ° C. and then rapidly cooling, the obtained fired product is crushed to 60 to 200 mesh, and then the fired crushed product is immersed in a mixed solution of hydrofluoric acid and hydrochloric acid, and then the above immersion. The treated pulverized product is heat-treated at a temperature of 1000 to 1200 ° C. in a controlled atmosphere containing halogen or its compound. After that, it was melt-molded to form each member of the support rods 1, 2 and 3 of quartz glass and both side frames 4 and 5, and these constituent members were assembled. The measurement results are shown in Table 1.
【００１５】[0015]
【表１】 [Table 1]
【００１６】表１からわかるように、実施例は比較例１
と比べて支持棒の変形量は格段と少なく、また実施例は
比較例２と比べてボ−ト全体の純度が極めて高い。しか
も組立前の部材で純化処理しているため大きな炉は必要
でなく、処理するための炉を小さくすることができる。As can be seen from Table 1, the example is the comparative example 1.
The deformation amount of the support rod is remarkably smaller than that of Comparative Example 2, and the purity of the entire boat in Example is extremely higher than that of Comparative Example 2. Moreover, since the purification process is performed on the members before assembly, a large furnace is not necessary, and the furnace for processing can be made small.
【００１７】尚、上記実施例では半導体ウェハボートを
用いて説明したが、石英ガラスを用いた半導体製造用治
具であれば、当然本発明を適用でき、例えば炉心管、半
導体ウェハボート搬送治具等の半導体製造用治具にも適
用できる。また上記実施例では、処理ガスとして塩化水
素ガスを用いた場合を示したが、ハロゲン含有ガスであ
れば同様に用いることができる。ハロゲン含有ガスに
は、ハロゲン単体ガスとハロゲン化合物ガスとが含まれ
る。Although the semiconductor wafer boat has been described in the above embodiments, the present invention can naturally be applied to any semiconductor manufacturing jig using quartz glass, for example, a furnace tube or a semiconductor wafer boat carrying jig. It can also be applied to semiconductor manufacturing jigs such as. Further, in the above embodiment, the case where the hydrogen chloride gas is used as the processing gas is shown, but any halogen-containing gas can be similarly used. The halogen-containing gas includes a halogen simple substance gas and a halogen compound gas.
【００１８】[0018]
【発明の効果】本発明にかかる製造方法は、半導体製造
用治具を構成する部材を製造した後、その部材を所定の
処理条件下でハロゲン含有ガスにて、前記部材を純化す
るため、半導体製造用治具として充分な純度を得ること
ができ、また部材の変形がなく所定の寸法形状に仕上げ
ることができ、しかも純化処理するための炉を小型化で
き、安価な半導体製造用治具を得ることができるもので
ある。According to the manufacturing method of the present invention, after the member constituting the semiconductor manufacturing jig is manufactured, the member is purified with the halogen-containing gas under the predetermined processing conditions. As a manufacturing jig, a sufficient purity can be obtained, the members can be finished to a predetermined size without deformation, and the purification furnace can be downsized. Is what you can get.
【図１】 図１は半導体ウェハボートの正面図である。FIG. 1 is a front view of a semiconductor wafer boat.
【図２】 図２は支持棒の純化処理のため用いられる治
具の斜視図である。FIG. 2 is a perspective view of a jig used for purifying a support rod.
【図３】 図３は側枠の純化処理のため用いられる治具
の斜視図である。FIG. 3 is a perspective view of a jig used for purifying the side frame.
【図４】 図４は支持棒の変形量を説明するための図で
ある。FIG. 4 is a diagram for explaining a deformation amount of a support rod.
１ 石英ガラスの支持棒 ２ 石英ガラスの支持棒 ３ 石英ガラスの支持棒 ４ 側枠 ５ 側枠 ６ 係止板 ７ 溝 ８ 治具 ９ 治具 1 Quartz glass support rod 2 Quartz glass support rod 3 Quartz glass support rod 4 Side frame 5 Side frame 6 Locking plate 7 Groove 8 Jig 9 Jig
Claims (1)
する部材を製造する工程と、前記部材を炉心管内セット
し、所定の処理条件下でハロゲン含有ガスを炉に供給し
前記部材の純化する工程と、前記純化した部材を組立て
半導体製造用治具とする組立て工程とからなることを特
徴とする半導体製造用治具の製造方法。1. A step of manufacturing a member constituting a semiconductor manufacturing jig from quartz glass, setting the member in a furnace core tube, and supplying a halogen-containing gas to the furnace under predetermined processing conditions to purify the member. A method for manufacturing a semiconductor manufacturing jig, comprising the steps of: and a step of assembling the purified member into a semiconductor manufacturing jig.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34772893A JPH07183240A (en) | 1993-12-24 | 1993-12-24 | Manufacture of semiconductor manufacturing jig |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34772893A JPH07183240A (en) | 1993-12-24 | 1993-12-24 | Manufacture of semiconductor manufacturing jig |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07183240A true JPH07183240A (en) | 1995-07-21 |
Family
ID=18392192
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34772893A Pending JPH07183240A (en) | 1993-12-24 | 1993-12-24 | Manufacture of semiconductor manufacturing jig |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07183240A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1471039A1 (en) * | 2003-04-21 | 2004-10-27 | Heraeus Quarzglas GmbH & Co. KG | Method for producing quartz glass jig and quartz glass jig |
| EP1386890A3 (en) * | 2002-07-31 | 2004-12-15 | Heraeus Quarzglas GmbH & Co. KG | Quartz glass jig and method for producing the same |
| WO2006114440A1 (en) * | 2005-04-28 | 2006-11-02 | Heraeus Quarzglas Gmbh & Co. Kg | Method for the regeneration of a worn quartz glass jig |
| JP2010219535A (en) * | 2003-04-15 | 2010-09-30 | Saint-Gobain Ceramics & Plastics Inc | Method for treating semiconductor processing component and component formed by the same |
| KR101126735B1 (en) * | 2005-12-20 | 2012-03-29 | 주식회사 엘지실트론 | Wafer cassette |
| CN102659303A (en) * | 2012-03-30 | 2012-09-12 | 湖州奥博石英科技有限公司 | Quartz spliced product and manufacturing method thereof |
-
1993
- 1993-12-24 JP JP34772893A patent/JPH07183240A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1386890A3 (en) * | 2002-07-31 | 2004-12-15 | Heraeus Quarzglas GmbH & Co. KG | Quartz glass jig and method for producing the same |
| JP2010219535A (en) * | 2003-04-15 | 2010-09-30 | Saint-Gobain Ceramics & Plastics Inc | Method for treating semiconductor processing component and component formed by the same |
| EP1471039A1 (en) * | 2003-04-21 | 2004-10-27 | Heraeus Quarzglas GmbH & Co. KG | Method for producing quartz glass jig and quartz glass jig |
| US7497095B2 (en) * | 2003-04-21 | 2009-03-03 | Heraeus Quarzglas Gmbh & Co. Kg | Method for producing quartz glass jig and quartz glass jig |
| WO2006114440A1 (en) * | 2005-04-28 | 2006-11-02 | Heraeus Quarzglas Gmbh & Co. Kg | Method for the regeneration of a worn quartz glass jig |
| JP2006306675A (en) * | 2005-04-28 | 2006-11-09 | Shinetsu Quartz Prod Co Ltd | Method for regenerating quartz-glass tool |
| KR101126735B1 (en) * | 2005-12-20 | 2012-03-29 | 주식회사 엘지실트론 | Wafer cassette |
| CN102659303A (en) * | 2012-03-30 | 2012-09-12 | 湖州奥博石英科技有限公司 | Quartz spliced product and manufacturing method thereof |
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