JP3649794B2 - Quartz glass jig for semiconductor heat treatment and manufacturing method thereof - Google Patents
Quartz glass jig for semiconductor heat treatment and manufacturing method thereof Download PDFInfo
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- JP3649794B2 JP3649794B2 JP33258695A JP33258695A JP3649794B2 JP 3649794 B2 JP3649794 B2 JP 3649794B2 JP 33258695 A JP33258695 A JP 33258695A JP 33258695 A JP33258695 A JP 33258695A JP 3649794 B2 JP3649794 B2 JP 3649794B2
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
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Description
【０００１】
【産業上の利用分野】
本発明は、半導体熱処理用石英ガラス治具及びその製造方法に関する。
【０００２】
【従来の技術】
従来、石英ガラスは高純度でしかも耐化学薬品性に優れているところから、シリコンウエハ−熱処理用ボート、ＲＣＡ洗浄の洗浄治具等に使用されてきた。前記治具の作成素材としては天然石英ガラスや合成シリカガラスが考えられるが、合成シリカガラスは高価なところから専ら天然石英ガラスが用いられている。このように半導体熱処理用石英ガラス治具は一般に天然石英ガラス素材で形成されるが、該天然石英ガラス素材は天然の結晶質二酸化珪素粉、特に水晶粉を１９００〜２１００℃に溶融し、それを自然放冷して製造した石英ガラスインゴットを加工して作成するので約１５００℃の仮想温度を示す。前記石英ガラス素材を用いて石英ガラス治具を作成するには火炎によって前記素材を溶接したのちアニール処理する工程を繰り返すのが通常であるが、該治具の仮想温度は、火炎によって溶接した部分と火炎と接触しない部分とではアニール処理後の仮想温度が１５００℃以下で変化し仮想温度の異なる部位が発生し、シリコンウエハの熱処理時に治具に部分的な伸長差が生じ、治具の変形が起こる。そのためアニール処理時の仮想温度の変化に対応した加工が施された石英ガラス治具が、例えば特開平７−１４７９３号、特開平７−１４７９４号等で提案されている。
【０００３】
【発明が解決しようとする課題】
しかしながら、上記公報記載の半導体熱処理用石英ガラス治具を用いてシリコンウエハを熱処理しても、熱処理が複数回に渡るとシリコンウエハに捩れが生じ、治具を長時間使用することができない上に、シリコンウェーハを複数の点で支持する石英ガラス治具では、部分的に支持した点が伸びて、シリコンウェーハの重量を複数の点で均等に支持できなくなり、シリコンウェーハの中心が自重によって撓み、熱処理によってスリップが発生する等の問題が起こった。
【０００４】
こうした現状に鑑み、本発明者等は鋭意研究を重ねた結果、石英ガラス治具の仮想温度を１２００℃以下とするとともに、治具を構成する各部材及び各部位の仮想温度差を５０℃以下とすることで上記の問題が解決できることを見出し、本発明を完成したものである。すなわち
【０００５】
本発明は、寸法精度を長時間維持でき、使用寿命の長い半導体熱処理用石英ガラス治具を提供することを目的とする。
【０００６】
また、本発明は、上記半導体熱処理用石英ガラス治具の製造方法を提供することを目的とする。
【０００７】
【課題を解決するための手段】
上記目的を達成する本発明は、石英ガラス素材で作成した半導体熱処理用石英ガラス治具において、治具の仮想温度が１２００℃以下で、かつ治具を構成する各部材及び各部位の仮想温度差が５０℃以下であることを特徴とする半導体熱処理用石英ガラス治具及びその製造方法に係る。
【０００８】
上記石英ガラス素材とは、天然の結晶質石英粉を１９００〜２１００℃の温度に溶融して得た石英ガラスのインゴット又はブロックを加工して作成した石英ガラスむく棒、角棒又は板をいう。前記石英ガラス素材のうち石英粉を１９００〜２１００℃に加熱溶融したのち急冷して製造したインゴット又はブロックを加工して作成した素材はその仮想温度が約１５００℃となる一方、加熱溶融され徐冷されたインゴット又はブロックを加工して作成した素材は仮想温度が約１２００℃となる。これらの石英ガラス素材を用いて周知のガラス細工等で半導体熱処理用石英ガラス治具を作成すると、治具には仮想温度が１５００℃の部分と仮想温度が１２００℃の部分とが混在することになる上に、ガラス細工で接合した部分の仮想温度が１５００℃に設定され、爾後の熱処理を行っても仮想温度が１５００℃と１２００℃の部分では設定される仮想温度に５０℃以上の差が生じることになる。一方、シリコンウェーハの熱処理温度は１２００℃以下であるところから、前記石英ガラス治具を使用してシリコンウェーハの熱処理を行うと部分的に仮想温度に差があることから石英ガラス治具に変形が生じる。そこで、本発明の半導体熱処理用石英ガラス治具では仮想温度を１２００℃以下とするとともに、治具を構成する各部材及び各部位の仮想温度差を５０℃以下とするものである。前記仮想温度を設定することにより石英ガラス治具に部分的な異常な密度収縮や膨張が起らず、治具の寸法精度が高く維持でき、使用寿命を長くできる。
【０００９】
上記仮想温度とは、熱履歴によって異なった物性値を示す室温の石英ガラスの物性値を設定する温度をいう（Ｒ．Ｂｒｕｃｋｎｅｒ（１９７０）Ｊｏｕｒｎａｌ ｏｆ Ｎｏｎ−Ｃｒｙｓｔａｌｌｉｎｅ Ｓｏｌｉｄｓ ｖｏｌ．５ ｐｐ１２３〜１７５）。例えば、天然二酸化珪素粉を酸水素火炎中に投入して急冷すると、その石英ガラスの仮想温度は１５００℃となりその温度に起因する物性値、例えば密度、屈折率、熱膨張率を示すようになる。ところが、その後１５００℃より低い温度で熱処理すると、１５００℃より低い仮想温度を有するようになり、その仮想温度に起因する物性値を示すようになる。
【００１０】
本発明の半導体熱処理用石英ガラス治具は、石英ガラス原料を溶融して得たインゴット又はブロックを加工して石英ガラスむく棒、角棒（仮想温度１５００℃）及び板（仮想温度１２００℃）を作成し、それをガラス細工で組み立てて半導体熱処理用石英ガラス治具を作成し、それを熱処理前に１２００℃以上の温度で加熱処理したのち、１０００〜１２００℃の温度範囲で所定の時間熱処理して仮想温度を１２００℃以下、各部材及び各部位の仮想温度差を５０℃以下とする方法で製造される。前記熱処理前の加熱処理は、治具の各部材及び各部位での部分的な仮想温度差をなくすための処理で、該処理で治具の接合部分以外の部分の仮想温度を上げ、熱処理する前に各部材及び各部位の仮想温度を同じくするものである。前記熱処理としてはアニール処理が好ましく、また加熱処理としてヒーター又は火炎で石英ガラス治具全体を加熱するのがよい。このように本発明の製造方法では１２００℃以上で加熱処理したのち、１０００〜１２００℃で熱処理するが、熱処理温度が１０００℃未満では各部材及び各部位での仮想温度差を５０℃以下とすることが不可能であり、また、熱処理温度が１２００℃を超えても各部材及び各部位の仮想温度差を５０℃以下とすることができるが、治具に変形が起こる。
【００１１】
本発明の半導体熱処理用石英ガラス治具は、また組立てられた半導体熱処理用石英ガラス治具に熱処理、特にアニール処理を複数回繰り返すことによっても製造できる。前記熱処理の繰り返しによる仮想温度の低下は治具の仮想温度が１２００〜１３００℃になるとその変化速度が遅くなり部分的な仮想温度差が小さくなることに起因するものと考えられる。さらに石英ガラス治具を作成するための石英ガラスむく棒及び板を予め熱処理し仮想温度を１２００℃以下、仮想温度差が５０℃以下の素材を作成し、それを接合により仮想温度が変わった部位を１２００℃以下の温度で熱処理を行って仮想温度を１２００℃以下とする方法によっても作成できる。
【００１２】
【発明の実施の態様】
以下に実施例で本発明をさらに詳しく説明するが、本発明はこれらの実施例に限定されるものではない。
【００１３】
また、以下の例の仮想温度の測定は、ラマン散乱分光光度法（Ｆｒａｎｋ Ｌ．Ｇａｌｅｎｅｅｒ（１９８２）Ｊｏｕｒｎａｌ ｏｆ Ｎｏｎ−Ｃｒｙｓｔａｌｌｉｎｅ Ｓｏｌｉｄｓ ｖｏｌ．４９ ｐｐ５３〜６２。Ａ．Ｃｈｍｅｌ ａｎｄ Ｇ．Ｍ．Ｓｏｃｈｉｖｋｉｎ（１９８６）Ｓｏｌｉｄ Ｓｔａｔｅ Ｃｏｍｍｕｎｉｃａｔｉｏｎｓ ｖｏｌ．５８、Ｎｏ．６ ＰＰ３６３〜３６５．）により行われる。
【００１４】
【実施例】
実施例１
天然二酸化珪素粉を酸水素火炎中で溶融して石英ガラスのインゴットを製造し、次いで該インゴットを加工して石英ガラスむく棒を得た。また、天然二酸化珪素粉を電気炉で溶融して石英ガラスのブロックを製造し、次いで該ブロックを切断して石英ガラス板を得た。むく棒及び板の仮想温度は、各々１５００℃と１２００℃であった。前記素材を溶接して１２インチシリコンウエハ熱処理用縦型リングボートを作成した。縦型リングボートは石英ガラスリング上の４点の突起でシリコンウェーハを保持するタイプの石英ガラスボートであるが、４点の突起で均等に１２インチシリコンウェーハの重量を保持するので、熱処理中にシリコンウェーハに転移が発生しにくい。前記縦型リングボートの作成時に、溶接個所以外の部分を火炎で加熱したのちに、電気炉内で１１５０℃で３０分間加熱したのち徐冷するアニール処理を１回行った。アニール処理後の縦型リングボートの仮想温度は１１８０℃であり、また仮想温度差が５０℃を超える部材もまた部位もなかった。この縦型リングボートを用いて１２インチシリコンウエハの熱処理を行ったところ、４点の突起部分での撓みが少なく１２インチシリコンウェーハの自重を均等に保持することができ、シリコンウェーハに歪みが発生せず、しかも結晶の転移部分が少なく歩留よく熱処理ができた。
【００１５】
実施例２
実施例１と同様に作成した縦型リングボートの作成時に、溶接加工後に１４００℃で１分熱処理を行った後、１１００℃で６０分間加熱後徐冷するアニール処理を１回行った。アニール処理後の縦型リングボートの仮想温度を測定したところ、１１５０℃であり、仮想温度差が５０℃を超える部材もまた部位もなかった。この縦型リングボートを用いて１２インチシリコンウエハの熱処理を行ったところ、４点の突起部分での撓みが少なく１２インチシリコンウェーハの自重を均等に保持することができ、シリコンウェーハに歪みが発生せず、しかも結晶の転移部分が少なく歩留よく熱処理ができた。
【００１６】
実施例３
実施例１と同様に作成した縦型リングボートに１１５０℃で３０分間加熱後徐冷するアニール処理を５回繰り返し行った。アニール処理後の縦型リングボートの仮想温度を測定したところ１１５０℃であり、仮想温度差が５０℃を超える部材もまた部位がなかった。前記縦型リングボートを用いて１２インチシリコンウエハの熱処理を行ったところ、４点の突起部分での撓みが少なく１２インチシリコンウェーハの自重を均等に保持することができ、シリコンウェーハに歪みが発生せず、しかも結晶の転移部分が少なく歩留よく熱処理ができた。
【００１７】
比較例１
実施例１と同様にして縦型リングボートを作成後、電気炉内で１１５０℃で３０分間加熱後徐冷するアニール処理を１回行った。アニール処理後の縦型リングボートの仮想温度を測定したところリング部では１１８０℃で、突起部では１３００℃であった。この縦型リングボートを用いて１２インチシリコンウエハの熱処理を行ったところ、４点の突起部分での撓みが発生し１２インチシリコンウェーハの自重を３点で保持する不具合が発生した。このため、１２インチシリコンウェーハには歪みが発生し、中心部で結晶が移転してしまい、歩留が低下した。
【００１８】
【発明の効果】
本発明の半導体熱処理用石英ガラス治具は、シリコンウェーハの熱処理時において寸法精度が高く維持され、長時間の使用によってもシリコンウェーハの自重を均等に保持することができ、シリコンウェーハに転移等の問題が起こることがない。しかも、前記半導体熱処理用石英ガラス治具は、治具を構成する各部材及び各部位の仮想温度差を５０℃以下となるように加熱処理後熱処理を加えるか、若しくは熱処理を繰り返すことで容易に製造できその工業的価値は多大なものがある。[0001]
[Industrial application fields]
The present invention relates to a quartz glass jig for semiconductor heat treatment and a method for manufacturing the same.
[0002]
[Prior art]
Conventionally, quartz glass has been used for silicon wafer-heat treatment boats, RCA cleaning jigs, etc. because of its high purity and excellent chemical resistance. Natural quartz glass or synthetic silica glass can be considered as a material for producing the jig, but synthetic silica glass is exclusively natural quartz glass because it is expensive. As described above, the quartz glass jig for semiconductor heat treatment is generally formed of a natural quartz glass material. The natural quartz glass material is obtained by melting natural crystalline silicon dioxide powder, particularly quartz powder, to 1900 to 2100 ° C. A fictive temperature of about 1500 ° C. is shown because it is made by processing a quartz glass ingot produced by natural cooling. In order to create a quartz glass jig using the quartz glass material, it is usual to repeat the annealing process after welding the material by a flame, but the virtual temperature of the jig is the part welded by the flame. And the part that does not come into contact with the flame, the fictive temperature after annealing changes to 1500 ° C or less, and a part with a different fictive temperature is generated. Happens. Therefore, for example, Japanese Laid-Open Patent Publication Nos. 7-14793 and 7-14794 propose quartz glass jigs that have been processed in accordance with changes in the fictive temperature during annealing.
[0003]
[Problems to be solved by the invention]
However, even if the silicon wafer is heat-treated using the quartz glass jig for semiconductor heat treatment described in the above publication, the silicon wafer is twisted if the heat treatment is performed a plurality of times, and the jig cannot be used for a long time. In the quartz glass jig that supports the silicon wafer at a plurality of points, the partially supported point extends, and the weight of the silicon wafer cannot be evenly supported at a plurality of points, and the center of the silicon wafer is bent by its own weight, Problems such as the occurrence of slip by heat treatment occurred.
[0004]
In view of the present situation, the present inventors have conducted extensive research and as a result, the virtual temperature of the quartz glass jig is set to 1200 ° C. or lower, and the virtual temperature difference between each member and each part constituting the jig is 50 ° C. or lower. Thus, the inventors have found that the above problem can be solved, and have completed the present invention. That is, [0005]
An object of the present invention is to provide a quartz glass jig for semiconductor heat treatment that can maintain dimensional accuracy for a long time and has a long service life.
[0006]
Another object of the present invention is to provide a method for producing the above quartz glass jig for semiconductor heat treatment.
[0007]
[Means for Solving the Problems]
The present invention that achieves the above object is a quartz glass jig for semiconductor heat treatment made of a quartz glass material, wherein the virtual temperature of the jig is 1200 ° C. or less, and each member constituting the jig and the virtual temperature difference of each part The present invention relates to a quartz glass jig for semiconductor heat treatment and a method for producing the same.
[0008]
The quartz glass material means a quartz glass bar, square bar or plate produced by processing a quartz glass ingot or block obtained by melting natural crystalline quartz powder at a temperature of 1900 to 2100 ° C. Among the quartz glass materials, quartz powder is heated and melted to 1900-2100 ° C., and then processed by ingot or block manufactured by rapid cooling, while the fictive temperature is about 1500 ° C., while it is heated and melted and gradually cooled. The material created by processing the ingot or block formed has a fictive temperature of about 1200 ° C. When a quartz glass jig for semiconductor heat treatment is created using these quartz glass materials by a known glass work or the like, the jig has a portion where the virtual temperature is 1500 ° C. and a portion where the virtual temperature is 1200 ° C. In addition, the fictive temperature of the part joined by the glasswork is set to 1500 ° C, and even if heat treatment is performed after heating, there is a difference of 50 ° C or more in the fictive temperature set at the fictive temperature of 1500 ° C and 1200 ° C Will occur. On the other hand, since the heat treatment temperature of the silicon wafer is 1200 ° C. or less, if the heat treatment of the silicon wafer is performed using the quartz glass jig, there is a difference in the fictive temperature. Arise. Therefore, in the quartz glass jig for semiconductor heat treatment of the present invention, the fictive temperature is set to 1200 ° C. or less, and the fictive temperature difference between each member and each part constituting the jig is set to 50 ° C. or less. By setting the fictive temperature, partial abnormal density shrinkage and expansion of the quartz glass jig does not occur, the dimensional accuracy of the jig can be maintained high, and the service life can be extended.
[0009]
The fictive temperature refers to a temperature at which a physical property value of room-temperature quartz glass showing different physical property values depending on a thermal history is set (R. Bruckner (1970) Journal of Non-Crystalline Solids vol. 5 pp123-175). For example, when natural silicon dioxide powder is put into an oxyhydrogen flame and rapidly cooled, the fictive temperature of the quartz glass becomes 1500 ° C., and physical properties such as density, refractive index, and coefficient of thermal expansion resulting from that temperature are exhibited. . However, after that, when heat treatment is performed at a temperature lower than 1500 ° C., a virtual temperature lower than 1500 ° C. is obtained, and physical property values resulting from the virtual temperature are exhibited.
[0010]
The quartz glass jig for semiconductor heat treatment according to the present invention processes an ingot or block obtained by melting a quartz glass raw material to produce a quartz glass peeling rod, square bar (virtual temperature 1500 ° C.) and plate (virtual temperature 1200 ° C.). Create and assemble it by glasswork to create a quartz glass jig for semiconductor heat treatment, heat it at a temperature of 1200 ° C. or higher before heat treatment, and then heat-treat in a temperature range of 1000 to 1200 ° C. for a predetermined time. The virtual temperature is 1200 ° C. or less, and the virtual temperature difference between each member and each part is 50 ° C. or less. The heat treatment before the heat treatment is a treatment for eliminating a partial virtual temperature difference in each member and each part of the jig, and the heat treatment is performed by raising the virtual temperature of the portion other than the joint portion of the jig in the treatment. The virtual temperature of each member and each part is made the same before. The heat treatment is preferably an annealing treatment, and the heat treatment is preferably performed by heating the entire quartz glass jig with a heater or a flame. As described above, in the production method of the present invention, after heat treatment at 1200 ° C. or higher, heat treatment is performed at 1000 to 1200 ° C. When the heat treatment temperature is less than 1000 ° C., the virtual temperature difference at each member and each part is 50 ° C. or less. In addition, even if the heat treatment temperature exceeds 1200 ° C., the virtual temperature difference between each member and each part can be 50 ° C. or less, but the jig is deformed.
[0011]
The quartz glass jig for semiconductor heat treatment of the present invention can also be produced by repeating heat treatment, particularly annealing treatment, a plurality of times on the assembled quartz glass jig for semiconductor heat treatment. The decrease in the virtual temperature due to the repetition of the heat treatment is considered to result from the fact that when the virtual temperature of the jig reaches 1200 to 1300 ° C., the rate of change becomes slow and the partial virtual temperature difference becomes small. Furthermore, the quartz glass bar and plate for making the quartz glass jig are pre-heated to create a material with a fictive temperature of 1200 ° C or less and a fictive temperature difference of 50 ° C or less, and the part where the fictive temperature has changed by bonding Can be created by a method in which heat treatment is performed at a temperature of 1200 ° C. or lower to set the fictive temperature to 1200 ° C. or lower.
[0012]
BEST MODE FOR CARRYING OUT THE INVENTION
The present invention will be described in more detail with reference to the following examples, but the present invention is not limited to these examples.
[0013]
In addition, the fictive temperature of the following examples is measured by Raman scattering spectrophotometry (Frank L. Galeneer (1982) Journal of Non-Crystalline Solids vol. 49 pp 53-62. A. Chmel and GM Sochikin (1986). Solid State Communications vol.58, No. 6 PP363-365.).
[0014]
【Example】
Example 1
Natural silicon dioxide powder was melted in an oxyhydrogen flame to produce an ingot of quartz glass, and then the ingot was processed to obtain a quartz glass bar. In addition, natural silicon dioxide powder was melted in an electric furnace to produce a quartz glass block, and then the block was cut to obtain a quartz glass plate. The fictive temperatures of the bar and the plate were 1500 ° C. and 1200 ° C., respectively. The said raw material was welded and the vertical ring boat for 12-inch silicon wafer heat processing was created. The vertical ring boat is a type of quartz glass boat that holds silicon wafers with four projections on the quartz glass ring, but the four-point projections hold the weight of a 12-inch silicon wafer evenly. Transfer is unlikely to occur on silicon wafers. At the time of making the vertical ring boat, after the portions other than the welded portions were heated with a flame, they were annealed once in the electric furnace at 1150 ° C. for 30 minutes and then gradually cooled. The virtual temperature of the vertical ring boat after the annealing treatment was 1180 ° C., and there was no member or part where the virtual temperature difference exceeded 50 ° C. When this vertical ring boat is used to heat-treat a 12-inch silicon wafer, there is little deflection at the four protrusions and the weight of the 12-inch silicon wafer can be held evenly, and the silicon wafer is distorted. In addition, the heat treatment could be performed with a high yield with few crystal transitions.
[0015]
Example 2
At the time of making the vertical ring boat made in the same manner as in Example 1, a heat treatment was performed at 1400 ° C. for 1 minute after welding, and then an annealing process was performed once, which was heated at 1100 ° C. for 60 minutes and then gradually cooled. When the virtual temperature of the vertical ring boat after the annealing treatment was measured, it was 1150 ° C., and there was no member or part where the virtual temperature difference exceeded 50 ° C. When this vertical ring boat is used to heat-treat a 12-inch silicon wafer, there is little deflection at the four protrusions and the weight of the 12-inch silicon wafer can be held evenly, and the silicon wafer is distorted. In addition, the heat treatment could be performed with a high yield with few crystal transitions.
[0016]
Example 3
An annealing process in which the vertical ring boat produced in the same manner as in Example 1 was heated at 1150 ° C. for 30 minutes and then slowly cooled was repeated five times. When the fictive temperature of the vertical ring boat after the annealing treatment was measured, it was 1150 ° C., and there was no portion of the member having a fictive temperature difference exceeding 50 ° C. When heat treatment was performed on a 12-inch silicon wafer using the vertical ring boat, there was little deflection at the four protrusions and the weight of the 12-inch silicon wafer could be held evenly, resulting in distortion of the silicon wafer. In addition, the heat treatment could be performed with a high yield with few crystal transitions.
[0017]
Comparative Example 1
A vertical ring boat was prepared in the same manner as in Example 1, and then annealed once in an electric furnace at 1150 ° C. for 30 minutes and then gradually cooled. When the virtual temperature of the vertical ring boat after the annealing treatment was measured, it was 1180 ° C. at the ring portion and 1300 ° C. at the protrusion portion. When this vertical ring boat was used to heat-treat a 12-inch silicon wafer, bending occurred at the four projections, resulting in a problem of holding the weight of the 12-inch silicon wafer at three points. For this reason, distortion occurred in the 12-inch silicon wafer, and the crystal moved at the center, resulting in a decrease in yield.
[0018]
【The invention's effect】
The quartz glass jig for semiconductor heat treatment of the present invention maintains high dimensional accuracy during the heat treatment of the silicon wafer, and can keep the weight of the silicon wafer even when used for a long time. There is no problem. Moreover, the quartz glass jig for semiconductor heat treatment can be easily obtained by applying heat treatment after heat treatment so that the virtual temperature difference between each member and each part constituting the jig is 50 ° C. or less, or by repeating the heat treatment. It can be manufactured and has great industrial value.
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33258695A JP3649794B2 (en) | 1995-11-28 | 1995-11-28 | Quartz glass jig for semiconductor heat treatment and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33258695A JP3649794B2 (en) | 1995-11-28 | 1995-11-28 | Quartz glass jig for semiconductor heat treatment and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09142859A JPH09142859A (en) | 1997-06-03 |
| JP3649794B2 true JP3649794B2 (en) | 2005-05-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33258695A Expired - Fee Related JP3649794B2 (en) | 1995-11-28 | 1995-11-28 | Quartz glass jig for semiconductor heat treatment and manufacturing method thereof |
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| WO2001012566A1 (en) * | 1999-08-12 | 2001-02-22 | Nikon Corporation | Method for preparation of synthetic vitreous silica and apparatus for heat treatment |
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| JPH09142859A (en) | 1997-06-03 |
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