JPH07180054A - Vacuum film forming device - Google Patents
Vacuum film forming deviceInfo
- Publication number
- JPH07180054A JPH07180054A JP5325388A JP32538893A JPH07180054A JP H07180054 A JPH07180054 A JP H07180054A JP 5325388 A JP5325388 A JP 5325388A JP 32538893 A JP32538893 A JP 32538893A JP H07180054 A JPH07180054 A JP H07180054A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- substrate
- film forming
- heated
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、枚様式に基板に成膜を
行なう真空成膜装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum film forming apparatus for forming a film on a substrate in a single wafer mode.
【０００２】[0002]
【従来の技術】従来のこの種の枚葉式に基板を成膜する
真空成膜装置としては、たとえば図５に示す構成が知ら
れている。この図５に示す真空成膜装置は、基板を搬入
し真空引きするロードロック室１に隣り合わせて、基板
を真空状態で搬送する真空搬送室２を設ける。また、こ
の真空搬送室２に隣り合わせて２つの成膜室３，３を設
けている。2. Description of the Related Art As a conventional vacuum film forming apparatus for forming a film on a substrate in this type of single wafer, a structure shown in FIG. 5 is known. The vacuum film forming apparatus shown in FIG. 5 is provided with a vacuum transfer chamber 2 for transferring a substrate in a vacuum state adjacent to a load lock chamber 1 for loading and evacuating the substrate. Further, two film forming chambers 3 and 3 are provided adjacent to the vacuum transfer chamber 2.
【０００３】そして、基板を加熱して成膜する際には、
ロードロック室１にて基板を真空引きし、真空搬送室２
を介して基板を成膜室３，３に搬送し、これら成膜室
３，３にて基板を所定の温度まで加熱し、その後プロセ
スガスを流して成膜している。When heating the substrate to form a film,
The substrate is evacuated in the load lock chamber 1, and the vacuum transfer chamber 2
The substrate is conveyed to the film forming chambers 3 and 3 via the, the substrate is heated to a predetermined temperature in the film forming chambers 3 and 3, and then a process gas is flown to form a film.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上述の
図５に示す実施例の場合には、加熱および成膜を成膜室
３にて実施しているため、成膜室３内では成膜のみなら
ず加熱のために基板が約１０分程度の長時間滞在しなけ
ればならず、タクトタイムが遅くなるため、生産性が低
下する問題を有している。However, in the case of the embodiment shown in FIG. 5 described above, since heating and film formation are performed in the film formation chamber 3, only film formation is performed in the film formation chamber 3. In addition, the substrate has to stay for a long time of about 10 minutes for heating, and the takt time is delayed, resulting in a problem that productivity is reduced.
【０００５】本発明は、上記問題点に鑑みなされたもの
で、タクトタイムを向上させて生産性を向上させる真空
成膜装置を提供することを目的とする。The present invention has been made in view of the above problems, and an object of the present invention is to provide a vacuum film forming apparatus which improves the takt time and improves the productivity.
【０００６】[0006]
【課題を解決するための手段】請求項１記載の真空成膜
装置は、基板を枚様式に搬送し、この基板を加熱して成
膜室にて成膜する真空成膜装置において、前記成膜室と
は別個に設けられ基板を加熱する基板加熱室と、この基
板加熱室に設けられ加熱時の圧力を制御する圧力制御機
構とを具備したものである。A vacuum film forming apparatus according to claim 1, wherein the substrate is conveyed in a single-piece manner, and the substrate is heated to form a film in a film forming chamber. A substrate heating chamber provided separately from the film chamber for heating the substrate, and a pressure control mechanism provided in the substrate heating chamber for controlling the pressure during heating are provided.
【０００７】請求項２記載の真空成膜装置は、請求項１
記載の真空成膜装置において、基板加熱室は、複数の基
板を同時に加熱可能な多段スロット構成であるものであ
る。According to a second aspect of the present invention, there is provided the vacuum film forming apparatus according to the first aspect.
In the vacuum film forming apparatus described above, the substrate heating chamber has a multi-stage slot structure capable of simultaneously heating a plurality of substrates.
【０００８】請求項３記載の真空成膜装置は、請求項２
記載の真空成膜装置において、多段スロットは、上下可
能なエレベータ機構を具備したものである。A vacuum film forming apparatus according to a third aspect is the second aspect.
In the vacuum film forming apparatus described above, the multistage slot is provided with an elevator mechanism that can be moved up and down.
【０００９】[0009]
【作用】請求項１記載の真空成膜装置は、真空成膜を行
なう成膜室とは別に基板加熱室を設け、基板加熱室にて
基板を加熱して成膜室で成膜するため、ある基板を成膜
している間に、次の基板を加熱できるため、複数の基板
の成膜と基板の加熱を同時にできるとともに、基板加熱
室内に圧力制御機構を設けることにより、基板の加熱時
間を短縮できるので、タクトタイムが向上して生産性が
向上する。In the vacuum film forming apparatus according to the present invention, the substrate heating chamber is provided separately from the film forming chamber for vacuum film formation, and the substrate is heated in the substrate heating chamber to form the film in the film forming chamber. While one substrate is being formed, the next substrate can be heated, so multiple substrates can be formed and the substrates can be heated at the same time.A pressure control mechanism is provided in the substrate heating chamber to increase the substrate heating time. As a result, the takt time is improved and the productivity is improved.
【００１０】請求項２記載の真空成膜装置は、請求項１
記載の真空成膜装置において、基板加熱室を多段スロッ
ト構成にすることにより、複数の基板を同時に加熱可能
とし、タクトタイムが向上して生産性が向上する。According to a second aspect of the present invention, there is provided the vacuum film forming apparatus according to the first aspect.
In the vacuum film forming apparatus described above, the substrate heating chamber has a multi-stage slot structure, so that a plurality of substrates can be heated at the same time, the tact time is improved, and the productivity is improved.
【００１１】請求項３記載の真空成膜装置は、請求項２
記載の真空成膜装置において、基板加熱室の多段スロッ
トは上下可能なエレベータ機構を有することにより、他
の成膜室、基板加熱室が１段のままでも対応できる。A vacuum film forming apparatus according to a third aspect is the second aspect.
In the vacuum film forming apparatus described above, the multi-stage slot of the substrate heating chamber has an elevator mechanism that can be moved up and down, so that other film forming chambers and substrate heating chambers can be used in the single stage.
【００１２】[0012]
【実施例】以下、本発明の真空成膜装置の一実施例の液
晶製造工程内のゲート線用真空成膜時に加熱成膜を実施
する真空成膜装置について図面を参照して説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A vacuum film forming apparatus for carrying out heating film formation during vacuum film formation for a gate line in a liquid crystal manufacturing process according to an embodiment of the vacuum film forming apparatus of the present invention will be described below with reference to the drawings.
【００１３】図１に示すように、基板Ｂを搬入して真空
引きするロードロック室11に隣り合わせて、基板Ｂを真
空状態で搬送する真空搬送室12を設ける。また、この真
空搬送室12に隣り合わせて、基板Ｂを真空状態で所定温
度まで加熱する基板加熱室13を設けるとともに、基板Ｂ
を成膜する２つの成膜室14，14を設けている。As shown in FIG. 1, a vacuum transfer chamber 12 for transferring the substrate B in a vacuum state is provided adjacent to a load lock chamber 11 for loading and vacuuming the substrate B. A substrate heating chamber 13 for heating the substrate B to a predetermined temperature in a vacuum state is provided adjacent to the vacuum transfer chamber 12, and the substrate B is also provided.
Two film forming chambers 14, 14 for forming a film are provided.
【００１４】さらに、基板加熱室13は、図２に示すよう
に、底板21上に下面が開口して形成された箱状の蓋体22
がＯリング23を介して気密に取り付けられて気密室24が
形成される。また、蓋体22には開口25が形成されて、こ
の開口25には開閉自在のゲート弁26が取り付けられ、こ
のゲート弁26と蓋体22ともＯリング27にて気密状態にな
っている。Further, the substrate heating chamber 13 is, as shown in FIG. 2, a box-shaped lid 22 formed by opening a lower surface on a bottom plate 21.
Are airtightly attached via an O-ring 23 to form an airtight chamber 24. Further, an opening 25 is formed in the lid body 22, and an openable / closable gate valve 26 is attached to the opening 25. Both the gate valve 26 and the lid body 22 are in an airtight state by an O-ring 27.
【００１５】また、気密室24内には、基板ヒータを兼ね
たステージ281 ，282 ，283 が３枚平行に設けられた多
段スロット構成で、これらステージ281 ，282 ，283 は
柱体29にて保持され、ステージ281 の下面には、主軸30
が設けられ、この主軸30には上下動可能な図示しないエ
レベータ機構が設けられている。そして、２段のステー
ジ281 ，282 上に、基板Ｂが載置できるようになってい
る。Further, in the hermetic chamber 24, three stages 28 1 , 28 2 , 28 3 also serving as substrate heaters are provided in parallel with each other in a multi-stage slot structure, and these stages 28 1 , 28 2 , 28 3 are held by pillar 29, the lower surface of the stage 28 1, the main shaft 30
The main shaft 30 is provided with an elevator mechanism (not shown) that is vertically movable. The substrate B can be placed on the two stages 28 1 and 28 2 .
【００１６】さらに、基板加熱室13は、図３に示すよう
に、窒素ガス（Ｎ2 ）を吸気する吸気パイプ31および排
気用の排気パイプ32が設けられ、吸気パイプ31にはエア
オペレーションバルブ33、マスフローコントローラ（Ｍ
ＦＣ）34およびエアオペレーションバルブ35が上流側か
ら順次設けられ、排気パイプ32にはバタフライバルブ36
が設けられている。そして、基板加熱室13には、基板加
熱室13内の圧力を検知する圧力ゲージ37が取り付けられ
ている。Further, as shown in FIG. 3, the substrate heating chamber 13 is provided with an intake pipe 31 for intake of nitrogen gas (N 2 ) and an exhaust pipe 32 for exhaust, and the intake pipe 31 has an air operation valve 33. , Mass flow controller (M
FC) 34 and an air operation valve 35 are sequentially provided from the upstream side, and a butterfly valve 36 is provided on the exhaust pipe 32.
Is provided. A pressure gauge 37 that detects the pressure inside the substrate heating chamber 13 is attached to the substrate heating chamber 13.
【００１７】また、圧力制御部38は、信号経路41によ
り、吸気パイプ31にはエアオペレーションバルブ33、マ
スフローコントローラ34およびエアオペレーションバル
ブ35、信号経路42により圧力ゲージ37、そして、信号経
路43によりバタフライバルブ36に接続され、これらにて
圧力制御機構44を構成している。The pressure control unit 38 uses the signal path 41 to connect the intake pipe 31 with the air operation valve 33, the mass flow controller 34 and the air operation valve 35, the signal path 42 to the pressure gauge 37, and the signal path 43 to the butterfly. It is connected to the valve 36, and these constitute a pressure control mechanism 44.
【００１８】次に、上記実施例の動作について説明す
る。Next, the operation of the above embodiment will be described.
【００１９】まず、基板Ｂはロードロック室11で真空引
きされ、真空引きされた基板Ｂは真空搬送室12により基
板加熱室13へ運ばれて所定温度まで加熱される。First, the substrate B is evacuated in the load lock chamber 11, and the evacuated substrate B is conveyed to the substrate heating chamber 13 by the vacuum transfer chamber 12 and heated to a predetermined temperature.
【００２０】そして、基板加熱室13内では、エレベータ
機構により主軸30を上下させ、真空搬送室12と同じ高さ
にそれぞれステージ281 ，282 を順次移動させ、それぞ
れのステージ281 ，282 上に基板Ｂを載置して加熱す
る。このようにステージ281 ，282 を２段にすることに
より、２枚の基板Ｂの加熱を同時に可能とし、タクトタ
イムが向上して、生産性が向上する。[0020] In the substrate heating chamber 13, the spindle 30 is vertically by an elevator mechanism, 1 vacuum transfer chamber 12 respectively at the same height as the stage 28, 28 2 sequentially move the respective stage 28 1, 28 2 The substrate B is placed on top and heated. By thus forming the stages 28 1 and 28 2 in two stages, two substrates B can be heated at the same time, the takt time is improved, and the productivity is improved.
【００２１】また、圧力制御機構44のマスフローコント
ローラ34によりエアオペレーションバルブ33，35で流量
を制御して、窒素ガスを基板加熱室13に導入する。そし
て、基板加熱室13内の圧力を圧力ゲージ37にてモニタ
し、圧力信号を信号経路42を介して圧力制御部38に送
り、圧力制御部38により目的の圧力たとえば１００Ｐａ
になるように、信号経路43を介してバタフライバルブ36
に指令が出される。この一連のシステムにより基板加熱
室13内の圧力を制御することを可能にする。Further, the mass flow controller 34 of the pressure control mechanism 44 controls the flow rate by the air operation valves 33 and 35 to introduce the nitrogen gas into the substrate heating chamber 13. Then, the pressure in the substrate heating chamber 13 is monitored by the pressure gauge 37, and the pressure signal is sent to the pressure control unit 38 via the signal path 42, and the pressure control unit 38 causes the target pressure, for example, 100 Pa.
The butterfly valve 36 via the signal path 43 to
Is issued to. This series of systems makes it possible to control the pressure in the substrate heating chamber 13.
【００２２】そして、基板Ｂを加熱する場合、基板加熱
室13内の圧力を１×１０-2Ｐａと１００Ｐａとした場合
で比較すると、雰囲気中のガスの圧力を上げることによ
り熱伝達が向上するために基板Ｂの加熱時間は、図４に
示すように、１０分から３分に短縮される。なお、従来
のように、１つの成膜室で加熱および成膜の両方を行な
う場合には、基板Ｂの加熱時に圧力を高めることは、成
膜実施時の圧力と加熱時の圧力が著しく異なるため、圧
力制御に時間を要し事実上不可能であるが、基板加熱室
13を成膜室14とは別個に設けることにより、加熱の際の
圧力を高めることができ、圧力を高めることにより処理
時間が短くなり、タクトタイムが向上して生産性が向上
する。When heating the substrate B, comparing the pressure inside the substrate heating chamber 13 with 1 × 10 -2 Pa and 100 Pa, heat transfer is improved by increasing the pressure of the gas in the atmosphere. Therefore, the heating time of the substrate B is shortened from 10 minutes to 3 minutes as shown in FIG. In the case where both heating and film formation are performed in one film forming chamber as in the conventional case, increasing the pressure during heating of the substrate B causes the pressure during film formation to be significantly different from the pressure during heating. Therefore, it takes time to control the pressure, which is practically impossible.
By providing 13 separately from the film forming chamber 14, the pressure at the time of heating can be increased. By increasing the pressure, the processing time is shortened, the tact time is improved, and the productivity is improved.
【００２３】さらに、基板加熱室13で加熱された基板は
成膜室14へ運ばれて成膜される。また、基板Ｂの成膜を
実施している間に、次の基板Ｂを基板加熱室13へ搬送し
て基板Ｂを加熱する。Further, the substrate heated in the substrate heating chamber 13 is conveyed to the film forming chamber 14 and a film is formed. Further, while the substrate B is being formed, the next substrate B is transported to the substrate heating chamber 13 to heat the substrate B.
【００２４】上述のように構成された真空成膜装置で
は、従来、１０分を要していた成膜前の基板Ｂの加熱の
所要時間を、まず、圧力制御をすることにより３分に短
縮し、ステージ281 ，282 を２段とした２段スロットと
することにより、リードタイムとして３分の半分の１．
５分とすることが可能であり、タクトタイムは成膜の所
要時間が１分の場合、従来加熱１０分＋成膜１分＝１１
分だったものが１．５分となり、飛躍的に生産性が向上
する。In the vacuum film forming apparatus constructed as described above, the time required for heating the substrate B before film formation, which conventionally required 10 minutes, is first reduced to 3 minutes by pressure control. Then, by making the stages 28 1 and 28 2 into a two-stage slot having two stages, the lead time is half that of 1/3.
It can be set to 5 minutes, and when the time required for film formation is 1 minute, the takt time is 10 minutes for conventional heating + 1 minute for film formation = 11.
What was a minute becomes 1.5 minutes, and productivity is dramatically improved.
【００２５】なお、ステージ281 ，282 は２段に限定す
るものではなく、また、上下可能なエレベータ機構を設
けなくても良い。さらに圧力制御に用いるガスは窒素に
限定されずアルゴン、水素などでも良い。The stages 28 1 and 28 2 are not limited to two stages, and an elevator mechanism capable of moving up and down may not be provided. Further, the gas used for pressure control is not limited to nitrogen, and may be argon, hydrogen, or the like.
【００２６】[0026]
【発明の効果】請求項１記載の真空成膜装置によれば、
真空成膜する成膜室とは別に基板加熱室を設け、基板加
熱室にて基板を加熱して成膜室で成膜するため、ある基
板を成膜している間に、次の基板を加熱でき、複数の基
板の成膜と基板の加熱を同時にできるとともに、基板加
熱室内に圧力制御機構を設けることにより、基板の加熱
時間を短縮できるので、タクトタイムが向上して生産性
を向上できる。According to the vacuum film forming apparatus of the first aspect,
A substrate heating chamber is provided separately from the film forming chamber for vacuum film formation, and a substrate is heated in the substrate heating chamber to form a film in the film forming chamber. Heating can be performed, film formation of multiple substrates and heating of substrates can be performed at the same time, and by providing a pressure control mechanism in the substrate heating chamber, the heating time of the substrates can be shortened, thus improving the takt time and improving the productivity. .
【００２７】請求項２記載の真空成膜装置によれば、請
求項１記載の真空成膜装置に加え、基板加熱室を多段ス
ロット構成にすることにより、複数の基板を同時に加熱
可能とし、タクトタイムが向上して生産性を向上でき
る。According to the vacuum film forming apparatus of the second aspect, in addition to the vacuum film forming apparatus of the first aspect, the substrate heating chamber has a multi-stage slot structure, so that a plurality of substrates can be heated at the same time. Time can be improved and productivity can be improved.
【００２８】請求項３記載の真空成膜装置によれば、請
求項２記載の真空成膜装置に加え、基板加熱室の多段ス
ロットは上下可能なエレベータ機構を有することによ
り、他の成膜室、基板加熱室が１段のままでも対応でき
る。According to the vacuum film forming apparatus of the third aspect, in addition to the vacuum film forming apparatus of the second aspect, the multistage slot of the substrate heating chamber has an elevator mechanism capable of moving up and down, so that another film forming chamber is provided. The substrate heating chamber can be used in the single stage.
【図１】本発明の真空成膜装置の一実施例のチャンバ構
成を示す構成図である。FIG. 1 is a configuration diagram showing a chamber configuration of an embodiment of a vacuum film forming apparatus of the present invention.
【図２】同上真空成膜装置の多段スロットの構成を示す
断面図である。FIG. 2 is a cross-sectional view showing the structure of a multi-stage slot of the above vacuum film forming apparatus.
【図３】同上真空成膜装置の圧力制御機構のシステムを
示す構成図である。FIG. 3 is a configuration diagram showing a system of a pressure control mechanism of the above vacuum film forming apparatus.
【図４】同上圧力制御機構を利用した基板温度と加熱時
間の関係を示すグラフである。FIG. 4 is a graph showing the relationship between substrate temperature and heating time using the same pressure control mechanism as above.
【図５】従来例の真空成膜装置のチャンバ構成を示す構
成図である。FIG. 5 is a configuration diagram showing a chamber configuration of a conventional vacuum film forming apparatus.
13 基板加熱室 14 成膜室 44 圧力制御機構 Ｂ 基板 13 Substrate heating chamber 14 Deposition chamber 44 Pressure control mechanism B Substrate
Claims (3)
して成膜室にて成膜する真空成膜装置において、 前記成膜室とは別個に設けられ基板を加熱する基板加熱
室と、 この基板加熱室に設けられ加熱時の圧力を制御する圧力
制御機構とを具備したことを特徴とする真空成膜装置。1. A vacuum film forming apparatus that conveys substrates in a single-piece manner and heats the substrates to form a film in a film forming chamber, wherein the substrate heating chamber is provided separately from the film forming chamber and heats the substrate. And a pressure control mechanism which is provided in the substrate heating chamber and controls a pressure during heating.
可能な多段スロット構成であることを特徴とする請求項
１記載の真空成膜装置。2. The vacuum film forming apparatus according to claim 1, wherein the substrate heating chamber has a multi-stage slot structure capable of simultaneously heating a plurality of substrates.
機構を具備したことを特徴とする請求項２記載の真空成
膜装置。3. The vacuum film forming apparatus according to claim 2, wherein the multi-stage slot is provided with an elevator mechanism that can be moved up and down.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5325388A JPH07180054A (en) | 1993-12-22 | 1993-12-22 | Vacuum film forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5325388A JPH07180054A (en) | 1993-12-22 | 1993-12-22 | Vacuum film forming device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07180054A true JPH07180054A (en) | 1995-07-18 |
Family
ID=18176280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5325388A Pending JPH07180054A (en) | 1993-12-22 | 1993-12-22 | Vacuum film forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07180054A (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS619567A (en) * | 1984-06-22 | 1986-01-17 | Hitachi Ltd | Method for forming film by sputtering |
| JPH02309630A (en) * | 1989-05-24 | 1990-12-25 | Fujitsu Ltd | Sputtering device |
| JPH03131542A (en) * | 1989-10-18 | 1991-06-05 | Toshiba Mach Co Ltd | Vapor-phase growth device |
| JPH04116165A (en) * | 1990-09-04 | 1992-04-16 | Sony Corp | Gas removing device and method for wafer holder |
| JPH05217919A (en) * | 1992-02-07 | 1993-08-27 | Tokyo Electron Ltd | Apparatus for removing spontaneous oxide film |
| JPH05275519A (en) * | 1992-03-27 | 1993-10-22 | Toshiba Corp | Multi-chamber type substrate treating device |
| JPH0669316A (en) * | 1992-06-15 | 1994-03-11 | Nissin Electric Co Ltd | Substrate treatment apparatus |
| JPH06173005A (en) * | 1992-12-07 | 1994-06-21 | Hitachi Ltd | Method for controlling substrate heating in vacuum treating device |
| JPH06172965A (en) * | 1992-12-07 | 1994-06-21 | Hitachi Ltd | Method for heat-treating substrate in film forming device and device therefor |
-
1993
- 1993-12-22 JP JP5325388A patent/JPH07180054A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS619567A (en) * | 1984-06-22 | 1986-01-17 | Hitachi Ltd | Method for forming film by sputtering |
| JPH02309630A (en) * | 1989-05-24 | 1990-12-25 | Fujitsu Ltd | Sputtering device |
| JPH03131542A (en) * | 1989-10-18 | 1991-06-05 | Toshiba Mach Co Ltd | Vapor-phase growth device |
| JPH04116165A (en) * | 1990-09-04 | 1992-04-16 | Sony Corp | Gas removing device and method for wafer holder |
| JPH05217919A (en) * | 1992-02-07 | 1993-08-27 | Tokyo Electron Ltd | Apparatus for removing spontaneous oxide film |
| JPH05275519A (en) * | 1992-03-27 | 1993-10-22 | Toshiba Corp | Multi-chamber type substrate treating device |
| JPH0669316A (en) * | 1992-06-15 | 1994-03-11 | Nissin Electric Co Ltd | Substrate treatment apparatus |
| JPH06173005A (en) * | 1992-12-07 | 1994-06-21 | Hitachi Ltd | Method for controlling substrate heating in vacuum treating device |
| JPH06172965A (en) * | 1992-12-07 | 1994-06-21 | Hitachi Ltd | Method for heat-treating substrate in film forming device and device therefor |
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| A02 | Decision of refusal |
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