JPH07176659A - Cooling structure for semiconductor device - Google Patents
Cooling structure for semiconductor deviceInfo
- Publication number
- JPH07176659A JPH07176659A JP32067993A JP32067993A JPH07176659A JP H07176659 A JPH07176659 A JP H07176659A JP 32067993 A JP32067993 A JP 32067993A JP 32067993 A JP32067993 A JP 32067993A JP H07176659 A JPH07176659 A JP H07176659A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- semiconductor device
- metal base
- cooling fin
- cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は中型、大型パッケージ
型半導体装置に係わり、特に半導体装置の冷却構造に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a medium-sized or large-sized package type semiconductor device, and more particularly to a semiconductor device cooling structure.
【０００２】[0002]
【従来の技術】図２に基づいて説明する。図２は従来例
を示すパッケージ型半導体装置の説明図であり、（ａ）
は上面図、（ｂ）はｂ−ｂ線部分断面図である。パッケ
ージ型半導体装置の金属ベース１上面にトランジスタチ
ップ４ａ、ダイオードチップ４ｂなどを搭載し、トラン
ジスタチップ４ａ、ダイオードチップ４ｂなどの半導体
チップ４から発生する熱を放出させるために金属ベース
１下面に金属冷却フィン９を取り付けてある。この半導
体装置を金属冷却フィン９に取り付ける場合、金属ベー
ス１下面と金属冷却フィン９との間にすき間が生じない
ようにするため、金属ベース１に図２（ｂ）に点線で示
すような５０〜１００μｍの反りを持たせ、ボルト１０
で金属冷却フィン９に締めつけることにより全面で密着
させるようにしている。なお反り量を５０〜１００μｍ
としたのは実験値より求めたものであり、半導体チップ
に応力を与えない範囲のものである。さらに半導体チッ
プ４より発生する熱を効率よく放出するために、金属冷
却フィン９の上面面積を半導体装置の下面面積の１．５
〜２倍としている。2. Description of the Related Art A description will be given with reference to FIG. FIG. 2 is an explanatory view of a package type semiconductor device showing a conventional example, (a)
Is a top view, and (b) is a partial sectional view taken along line bb. The transistor chip 4a, the diode chip 4b and the like are mounted on the upper surface of the metal base 1 of the package type semiconductor device, and the metal cooling is performed on the lower surface of the metal base 1 to radiate heat generated from the semiconductor chip 4 such as the transistor chip 4a and the diode chip 4b. The fin 9 is attached. When this semiconductor device is attached to the metal cooling fin 9, in order to prevent a gap from being formed between the lower surface of the metal base 1 and the metal cooling fin 9, the metal base 1 is provided with a 50 as shown by a dotted line in FIG. Bolt 10 with a warp of ~ 100 μm
The metal cooling fin 9 is tightened so that the entire surface is brought into close contact. The amount of warpage is 50 to 100 μm
The above is obtained from an experimental value, and is in a range where stress is not applied to the semiconductor chip. Furthermore, in order to efficiently dissipate the heat generated from the semiconductor chip 4, the upper surface area of the metal cooling fin 9 is set to 1.5 times the lower surface area of the semiconductor device.
~ 2 times.
【０００３】[0003]
【発明が解決しようとする課題】前述の方法によれば、
金属冷却フィンの上面面積を大きくした場合半導体装置
の端部の熱は効率よく放出できるが、半導体装置の中央
部で発生する熱は充分放出できず、この熱による熱応力
を低減することが難しいという問題が発生している。According to the method described above,
When the upper surface area of the metal cooling fin is increased, the heat at the end of the semiconductor device can be efficiently released, but the heat generated at the center of the semiconductor device cannot be sufficiently released, and it is difficult to reduce the thermal stress due to this heat. The problem is occurring.
【０００４】この発明は前記の問題点に鑑みてなされた
ものであり、その目的は半導体装置のどの部分からでも
均一に熱が放出できる半導体装置の冷却構造を提供する
ことにある。The present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a cooling structure for a semiconductor device capable of uniformly radiating heat from any part of the semiconductor device.
【０００５】[0005]
【課題を解決するための手段】この発明によれば前述の
目的は、金属ベースの上面に半導体チップを搭載し、金
属ベースの下面に金属冷却フィンを接合してなるパッケ
ージ型半導体装置において、金属ベースの下面に凹部を
設け、その凹部に対向する金属冷却フィン上面に凸部を
設け、前記金属冷却フィンのその凸部上面付近に冷却パ
イプを内蔵することにより達成される。According to the present invention, the aforementioned object is to provide a package type semiconductor device in which a semiconductor chip is mounted on the upper surface of a metal base and a metal cooling fin is joined to the lower surface of the metal base. This is achieved by providing a concave portion on the lower surface of the base, providing a convex portion on the upper surface of the metal cooling fin facing the concave portion, and incorporating a cooling pipe near the upper surface of the convex portion of the metal cooling fin.
【０００６】なお前記金属ベースの下面と前記金属冷却
フィン上面との間に熱伝導性パテを介在して接合するこ
とが有効である。[0006] It is effective to interpose a heat conductive putty between the lower surface of the metal base and the upper surface of the metal cooling fin to bond them together.
【０００７】[0007]
【作用】この発明の構成によれば、金属ベースの下面に
凹部を設け金属ベース下面と半導体チップとの間隔を狭
くすることができ熱の伝達が速くなり、さらに金属冷却
フィンの凸部上面付近に冷却パイプを内蔵させ、冷却水
を循環させることにより強制的に冷却される。また金属
ベースと金属冷却フィンとの接合面に熱伝導性パテを介
在させることとしたことにより、すき間のない接合がで
きる。According to the structure of the present invention, the concave portion is provided on the lower surface of the metal base so that the distance between the lower surface of the metal base and the semiconductor chip can be narrowed and the heat can be transferred quickly. It has a built-in cooling pipe and is forcedly cooled by circulating cooling water. In addition, since the heat conductive putty is interposed on the joint surface between the metal base and the metal cooling fin, there is no gap in the joint.
【０００８】[0008]
【実施例】図１に基づいて説明する。図１はこの発明の
実施例を示す半導体装置の構成図であり、（ａ）は上面
図、（ｂ）はａ−ａ線断面図である。従来例の部品と同
一、類似または対応する部品には同じ符号を付してあ
る。図に示すように金属ベース１の下面中央部に凹部を
設ける。金属ベース１の上面と凹部との間隔ｈ2 は金属
ベース１の強度を確保する必要性から金属ベース１の厚
さｈ1 の２／３程度がよい。このことにより半導体チッ
プ４と金属冷却フィンとの間隔が短くなり、その分熱の
放熱速度が早くなっている。金属冷却フィン９の上面に
は金属ベース１の凹部に対応する個所に凸部を設ける。
この凸部に冷却パイプ１２を埋め込むが、金属冷却フィ
ン９を鋳造で製作する場合は鋳造時に行うのがよく、機
械加工の場合はドリルなどでＸ軸、Ｙ軸方向に適宜孔を
あけ、不用部分を目隠ししてもよい。なお金属冷却フィ
ン９の接合部面積を金属ベース１の接合部面積とほぼ同
じとした。その後金属冷却フィン９の上面に熱伝導性パ
テ１１を約０．５ｍｍ程度塗布し、ボルト１０で金属ベ
ース１と金属冷却フィン９とを結合した。冷却パイプ１
２に流す冷却水は水道水で十分である。EXAMPLE An explanation will be given with reference to FIG. 1A and 1B are configuration diagrams of a semiconductor device showing an embodiment of the present invention. FIG. 1A is a top view and FIG. 1B is a sectional view taken along the line aa. Parts that are the same as, similar to, or correspond to the parts of the conventional example are denoted by the same reference numerals. As shown in the figure, a recess is provided in the center of the lower surface of the metal base 1. The distance h 2 between the upper surface of the metal base 1 and the recess is preferably about 2/3 of the thickness h 1 of the metal base 1 in order to secure the strength of the metal base 1. As a result, the distance between the semiconductor chip 4 and the metal cooling fin is shortened, and the heat dissipation rate is increased accordingly. On the upper surface of the metal cooling fin 9, a convex portion is provided at a position corresponding to the concave portion of the metal base 1.
Although the cooling pipe 12 is embedded in this convex portion, when the metal cooling fin 9 is manufactured by casting, it is preferable to perform it at the time of casting. In the case of machining, a hole is appropriately drilled in the X-axis and Y-axis directions by a drill, etc. The part may be blindfolded. The area of the joint portion of the metal cooling fin 9 was set to be substantially the same as the area of the joint portion of the metal base 1. After that, a heat-conducting putty 11 was applied to the upper surface of the metal cooling fin 9 by about 0.5 mm, and the metal base 1 and the metal cooling fin 9 were joined by the bolt 10. Cooling pipe 1
Tap water is sufficient as the cooling water to be supplied to 2.
【０００９】金属ベース１には予め絶縁基板７、トラン
ジスタチップ４ａ、ダイオードチップ４ｂなどが搭載さ
れ、金属端子６により端子ブロック３に接続されケース
２および封止樹脂８で被覆されている。トランジスタチ
ップ４ａ、ダイオードチップ４ｂなどの半導体チップ４
からの発熱は２．３〜５Ｗ／ｍｍ2 であり、この実施例
で製作した半導体装置で半導体チップ４の温度を測定し
た結果、なんら問題のないことを確認した。An insulating substrate 7, a transistor chip 4a, a diode chip 4b, etc. are mounted on the metal base 1 in advance, are connected to the terminal block 3 by metal terminals 6, and are covered with a case 2 and a sealing resin 8. Semiconductor chip 4 such as transistor chip 4a and diode chip 4b
The amount of heat generated from the semiconductor device was 2.3 to 5 W / mm 2 , and the temperature of the semiconductor chip 4 was measured with the semiconductor device manufactured in this example. As a result, it was confirmed that there was no problem.
【００１０】[0010]
【発明の効果】この発明によれば、金属ベースと金属冷
却フィンとの接合面に熱伝導性パテを介在させることと
したことにより、すき間のない接合ができ予め金属ベー
スに反りを形成する必要がなくなる。また金属ベースの
下面に凹部を設け金属ベース下面と半導体チップとの間
隔を狭くすることにより熱の伝達が速くなり、さらに金
属冷却フィンの凸部上面付近に冷却パイプを内蔵させこ
れに冷却水を流すことにより強制的に冷却され、特に半
導体装置の中央部の放熱効率が高まる。According to the present invention, since the heat-conducting putty is provided on the joint surface between the metal base and the metal cooling fin, it is necessary to form a warp on the metal base in advance so that the joint can be made without any gap. Disappears. In addition, by providing a recess on the bottom surface of the metal base to narrow the gap between the bottom surface of the metal base and the semiconductor chip, heat can be transferred more quickly, and a cooling pipe is built in near the top surface of the projection of the metal cooling fin to cool water. By flowing the liquid, it is forcibly cooled, and the heat dissipation efficiency is particularly improved in the central portion of the semiconductor device.
【図１】この発明の実施例を示す半導体装置の構成図で
あり、（ａ）は上面図、（ｂ）はａ−ａ線断面図1A and 1B are configuration diagrams of a semiconductor device showing an embodiment of the present invention, in which FIG. 1A is a top view and FIG. 1B is a sectional view taken along line aa.
【図２】従来例を示すパッケージ型半導体装置の説明図
であり、（ａ）は上面図、（ｂ）はｂ−ｂ線部分断面図2A and 2B are explanatory views of a package-type semiconductor device showing a conventional example, in which FIG. 2A is a top view and FIG. 2B is a partial sectional view taken along line bb.
【符号の説明】 １ 金属ベース ２ ケース ３ 端子ブロック ４ 半導体チップ ４ａ トランジスタチップ ４ｂ ダイオードチップ ６ 金属端子 ７ 絶縁基板 ８ 封止樹脂 ９ 金属冷却フィン １０ ボルト １１ 熱伝導性パテ １２ 冷却パイプ[Explanation of symbols] 1 metal base 2 case 3 terminal block 4 semiconductor chip 4a transistor chip 4b diode chip 6 metal terminal 7 insulating substrate 8 sealing resin 9 metal cooling fins 10 bolts 11 heat conductive putty 12 cooling pipes
Claims (3)
し、金属ベースの下面に金属冷却フィンを接合してなる
パッケージ型半導体装置において、金属ベースの下面に
凹部を設け、その凹部に対向する金属冷却フィン上面に
凸部を設けることを特徴とする半導体装置の冷却構造。1. A package-type semiconductor device in which a semiconductor chip is mounted on the upper surface of a metal base, and metal cooling fins are joined to the lower surface of the metal base. A recess is provided in the lower surface of the metal base, and a metal facing the recess is provided. A cooling structure for a semiconductor device, characterized in that a convex portion is provided on an upper surface of a cooling fin.
却フィンはその凸部上面付近に冷却パイプを内蔵するこ
とを特徴とする半導体装置の冷却構造。2. The cooling structure for a semiconductor device according to claim 1, wherein the metal cooling fin has a built-in cooling pipe near the upper surface of the convex portion.
ースの下面と前記金属冷却フィン上面との間に熱伝導性
パテを介在して接合することを特徴とする半導体装置の
冷却構造。3. The cooling structure for a semiconductor device according to claim 1, wherein a lower surface of the metal base and an upper surface of the metal cooling fin are bonded together with a heat conductive putty interposed therebetween.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32067993A JPH07176659A (en) | 1993-12-21 | 1993-12-21 | Cooling structure for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32067993A JPH07176659A (en) | 1993-12-21 | 1993-12-21 | Cooling structure for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07176659A true JPH07176659A (en) | 1995-07-14 |
Family
ID=18124125
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32067993A Pending JPH07176659A (en) | 1993-12-21 | 1993-12-21 | Cooling structure for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07176659A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007088365A (en) * | 2005-09-26 | 2007-04-05 | Sanyo Electric Co Ltd | Circuit device |
| US9257363B2 (en) | 2014-03-10 | 2016-02-09 | Mitsubishi Electric Corporation | Semiconductor device and method of manufacturing the same |
-
1993
- 1993-12-21 JP JP32067993A patent/JPH07176659A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007088365A (en) * | 2005-09-26 | 2007-04-05 | Sanyo Electric Co Ltd | Circuit device |
| JP4711792B2 (en) * | 2005-09-26 | 2011-06-29 | 三洋電機株式会社 | Circuit equipment |
| US9257363B2 (en) | 2014-03-10 | 2016-02-09 | Mitsubishi Electric Corporation | Semiconductor device and method of manufacturing the same |
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