TW202032874A - Semiconductor laser light source device equipped with a plurality of semiconductor laser elements and capable of realizing both high density and high heat dissipation - Google Patents

Semiconductor laser light source device equipped with a plurality of semiconductor laser elements and capable of realizing both high density and high heat dissipation Download PDF

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TW202032874A
TW202032874A TW108148509A TW108148509A TW202032874A TW 202032874 A TW202032874 A TW 202032874A TW 108148509 A TW108148509 A TW 108148509A TW 108148509 A TW108148509 A TW 108148509A TW 202032874 A TW202032874 A TW 202032874A
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semiconductor laser
heat sink
main board
light source
source device
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TW108148509A
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Chinese (zh)
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紺谷亘
北村政治
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日商牛尾電機股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling

Abstract

This invention provides a semiconductor laser light source device equipped with a plurality of semiconductor laser elements and capable of realizing both high density and high heat dissipation. A semiconductor laser light source device comprises: a main board defining a first through hole extending from a first surface to a second surface, a first heat dissipation sheet having at least a part thereof fitted in the first through hole and being made by a material with a higher thermal conductivity than the main board; a plurality of auxiliary bases arranged along a second direction on a surface in an area of a first surface side on which the first through hole is exposed; a plurality of semiconductor laser elements arranged on respective surfaces of the auxiliary bases; and a bonding material interposed between an inner wall of the main board and an outer wall of a first heat dissipation sheet in the first through hole. The first heat dissipation sheet has a first region fixed to the main board by the bonding material at the position on the first surface side and a second region not fixed to the main board at the position on the second surface side.

Description

半導體雷射光源裝置Semiconductor laser light source device

本發明，關於半導體雷射光源裝置。The present invention relates to a semiconductor laser light source device.

現在，在被稱為CAN封裝類型的封裝內收容有半導體雷射元件而成的半導體雷射光源裝置被實用化(例如參照專利文獻1)。圖23，是將上述專利文獻1所揭示之以往之CAN封裝型之半導體雷射光源裝置的構造予以示意表示的圖。At present, a semiconductor laser light source device in which a semiconductor laser element is housed in a package called a CAN package type is put into practical use (for example, refer to Patent Document 1). FIG. 23 is a diagram schematically showing the structure of the conventional CAN package type semiconductor laser light source device disclosed in Patent Document 1. FIG.

如圖23所示般，以往的半導體雷射光源裝置100，具備：主板101、在主板101的面上突出地形成的散熱片102、載放於散熱片102之面上的輔助座103、載放於輔助座103之面上的半導體雷射元件104。供電銷105，是將設在主板101的貫通孔予以貫通來配置，透過輔助座103來對半導體雷射元件104進行供電。As shown in FIG. 23, the conventional semiconductor laser light source device 100 includes a main board 101, a heat sink 102 protrudingly formed on the surface of the main board 101, an auxiliary seat 103 placed on the surface of the heat sink 102, and a carrier The semiconductor laser element 104 placed on the surface of the auxiliary seat 103. The power supply pins 105 are arranged by penetrating through holes provided in the main board 101, and supply power to the semiconductor laser element 104 through the auxiliary base 103.

罩蓋110，呈圓筒形狀，為了氣密而對主板101以蓋上的狀態來固定化。於罩蓋110設有窗部110a，從半導體雷射元件104射出的光是透過窗部110a而到達外部。 [先前技術文獻] [專利文獻]The cover 110 has a cylindrical shape, and is fixed to the main board 101 in a closed state for airtightness. The cover 110 is provided with a window 110a, and the light emitted from the semiconductor laser element 104 passes through the window 110a and reaches the outside. [Prior Technical Literature] [Patent Literature]

[專利文獻1]日本特開2017-130385號公報[Patent Document 1] JP 2017-130385 A

[發明所欲解決之問題][The problem to be solved by the invention]

供電銷105，是在主板101的貫通孔內，透過作為絕緣材料的低融點玻璃來***。且，罩蓋110，一般是對主板101藉由電阻焊接來固定。The power supply pin 105 is inserted in the through hole of the main board 101 through low melting point glass as an insulating material. Moreover, the cover 110 is generally fixed to the main board 101 by resistance welding.

就該觀點來看，主板101，要求著具有能承受電阻焊接之壓力之程度的高硬度，且為顯示出接近低融點玻璃的熱膨脹係數的材料。就該觀點來看，主板101，一般是利用Fe(鐵)或科伐合金等之鐵合金。但是，Fe並非熱傳導率充分高的材料，沒辦法將半導體雷射元件104之發光時所產生的熱有效率地散熱。就該觀點來看，如圖23所示般，除了主板101以外還另外配置由熱傳導率比Fe還高的材料所成的散熱片102，在該散熱片102之面上，透過輔助座103來安裝有半導體雷射元件104。From this point of view, the main board 101 is required to have a high hardness that can withstand the pressure of resistance welding, and be a material that exhibits a thermal expansion coefficient close to that of low melting point glass. From this point of view, the main board 101 generally uses iron alloys such as Fe (iron) or Kovar. However, Fe is not a material with sufficiently high thermal conductivity, and it cannot efficiently dissipate the heat generated when the semiconductor laser element 104 emits light. From this point of view, as shown in FIG. 23, in addition to the main board 101, a heat sink 102 made of a material with a higher thermal conductivity than Fe is also arranged. On the surface of the heat sink 102, the auxiliary seat 103 A semiconductor laser element 104 is installed.

散熱片102，一般是使用Cu(銅)等之熱傳導率比Fe還高且可比較便宜地取得的材料。散熱片102與主板101，是透過銀蠟等之金屬蠟材來接合。The heat sink 102 is generally made of materials such as Cu (copper), which has a higher thermal conductivity than Fe and can be obtained relatively cheaply. The heat sink 102 and the main board 101 are joined by a metal wax material such as silver wax.

但是，近年來，來自高輝度之半導體雷射光源裝置之市場的要求逐漸變高。本發明者們，針對圖23所示之以往的CAN封裝型的半導體雷射光源裝置100，檢討將複數個半導體雷射元件104予以並排藉此提高輝度。However, in recent years, the market demand for high-brightness semiconductor laser light source devices has gradually increased. The present inventors examined the conventional CAN package type semiconductor laser light source device 100 shown in FIG. 23 by arranging a plurality of semiconductor laser elements 104 to increase the brightness.

但是，使複數個半導體雷射元件104在狹窄的範圍內並排來構成的半導體雷射光源裝置100，與具備單獨半導體雷射元件104之以往的半導體雷射光源裝置100相較之下，散熱性的問題變得重要。本發明者們深入研究，得知若為圖23所圖示之以往的半導體雷射光源裝置100的構造的話，單純地將複數個半導體雷射元件104予以並排的情況，並無法確保充分高的散熱能力，而有著引起半導體雷射元件104之輸出的降低、射出光之波長的變化、或是減壽命化等之問題之虞。However, the semiconductor laser light source device 100 configured by arranging a plurality of semiconductor laser elements 104 side by side in a narrow range has lower heat dissipation performance than the conventional semiconductor laser light source device 100 provided with a single semiconductor laser element 104. The problem becomes important. The inventors of the present invention conducted intensive studies and found that in the case of the conventional semiconductor laser light source device 100 shown in FIG. 23, simply arranging a plurality of semiconductor laser elements 104 side by side cannot ensure a sufficiently high The heat dissipation capacity may cause problems such as a decrease in the output of the semiconductor laser element 104, a change in the wavelength of the emitted light, or a reduction in life.

本發明，是鑑於上述課題，以提供半導體雷射光源裝置為目的，其具備複數個半導體雷射元件，可實現高密度化與高散熱性之兩者。 [解決問題之技術手段]In view of the above-mentioned problems, the present invention aims to provide a semiconductor laser light source device, which includes a plurality of semiconductor laser elements and can achieve both high density and high heat dissipation. [Technical means to solve the problem]

本發明的半導體雷射光源裝置，其特徵為，具有： 主板，其由第一金屬材料所構成，且含有第一面、對於前述第一面位在第一方向的第二面、形成在部分區域並從前述第一面到達前述第二面的第一貫通孔； 第一散熱片，其配置成至少一部分嵌合於前述第一貫通孔內，且由熱傳導率比前述第一金屬材料還高的第二金屬材料所構成； 輔助座，其在前述第一散熱片之露出於前述第一貫通孔之前述第一面側的區域內之面上，沿著與前述第一方向正交的第二方向來複數配置； 複數個半導體雷射元件，其配置在複數個前述輔助座之各自的面上；以及 接合材，其在前述第一貫通孔內，中介於前述主板的內壁與前述第一散熱片的外壁之間， 前述第一散熱片，具有：在前述第一面側的位置藉由前述接合材來固定於前述主板的第一區域、在前述第二面側的位置沒有對前述主板固定的第二區域。The semiconductor laser light source device of the present invention is characterized in that it has: The main board is made of a first metal material and includes a first surface, a second surface in the first direction with respect to the first surface, and a first surface formed in a partial area and reaching the second surface from the first surface. Through hole The first heat sink is configured to fit at least a part of the first through hole and is made of a second metal material with a higher thermal conductivity than the first metal material; The auxiliary seat is arranged in plural along a second direction orthogonal to the first direction on the surface of the first heat sink exposed on the first surface side of the first through hole; A plurality of semiconductor laser elements are arranged on the respective surfaces of the plurality of auxiliary seats; and The bonding material is located in the first through hole and between the inner wall of the main board and the outer wall of the first heat sink, The first heat sink has: a first area fixed to the main board by the bonding material at a position on the first surface side, and a second area not fixed to the main board at a position on the second surface side.

例如，針對圖23所示之以往的CAN封裝型的半導體雷射光源裝置100，檢討將複數個半導體雷射元件104予以並排的情況時，為了確保散熱性，有必要使散熱片102變大。根據本發明者們的深入研究，得知若將大型的散熱片102與主板101藉由銀蠟等之金屬蠟材來接合的話，散熱片102容易往半導體雷射元件104側凸起而反曲。又，在此，為了方便說明，將從主板101來看之配置有半導體雷射元件104的朝向稱為「上」，將其反向稱為「下」。配合該稱呼方式來記載的話，根據本發明者們的深入研究，得知散熱片102容易反曲成上凸。For example, for the conventional CAN package type semiconductor laser light source device 100 shown in FIG. 23, when reviewing a case where a plurality of semiconductor laser elements 104 are arranged side by side, in order to ensure heat dissipation, it is necessary to enlarge the heat sink 102. According to the in-depth research of the present inventors, it is known that if the large heat sink 102 and the motherboard 101 are joined by a metal wax material such as silver wax, the heat sink 102 tends to bulge toward the semiconductor laser element 104 and bend. . In addition, here, for the convenience of description, the orientation in which the semiconductor laser element 104 is arranged from the main board 101 is referred to as "up", and the reverse is referred to as "down". According to the intensive research of the present inventors, if it is recorded in accordance with this addressing method, it is found that the heat sink 102 is easily curved upward.

為了進一步確保散熱性，有考慮到在主板101之與半導體雷射元件104相反側的面，亦即下側的面，直接或透過鋁壓鑄等之基台來配置冷卻構件的方法，該冷卻構件具有鰭片等之空冷構件或排水管等之水冷構件。但是，如上述般，若散熱片102反曲上凸的話，該冷卻構件與散熱片102就無法面接觸，無法確保高散熱性。In order to further ensure the heat dissipation, there is a method of arranging a cooling member directly or through a base such as aluminum die-casting on the surface of the motherboard 101 opposite to the semiconductor laser element 104, that is, the lower side. The cooling member Air-cooled components such as fins or water-cooled components such as drain pipes. However, as described above, if the heat sink 102 is curved and convex, the cooling member and the heat sink 102 cannot be in surface contact, and high heat dissipation cannot be ensured.

對此，根據本發明的半導體雷射光源裝置，第一散熱片，在第一面側(上側)是對於主板藉由接合材來固定，另一方面，在第二面側(下側)是不對主板固定。其結果，藉由主板與第一散熱片的接合工程，主板容易反曲下凸。藉此，在使空冷構件或水冷構件等之冷卻構件(在本說明書內對應於「第二散熱片」)接觸於主板的第二面側之際，將沿著下凸形狀的主板從第一面側將主板朝向第二面側(向下)按壓，藉此容易使第一散熱片對第二散熱片面接觸。其結果，可確保高散熱性。詳細後述於「發明的詳細說明」之項目。In this regard, according to the semiconductor laser light source device of the present invention, the first heat sink is fixed to the main board by a bonding material on the first surface side (upper side), and on the second surface side (lower side). Not fixed to the motherboard. As a result, through the joining process of the main board and the first heat sink, the main board is easy to bend and bulge. With this, when the cooling member (corresponding to the "second heat sink" in this specification) such as an air-cooling member or a water-cooling member is brought into contact with the second side of the main board, the main board along the downward convex shape is moved from the first The face side presses the main board toward the second face side (downward), thereby making it easy to make the first heat sink face the second heat sink. As a result, high heat dissipation performance can be ensured. Details will be described later in the item of "Detailed Description of Invention".

作為接合材，可利用銀蠟等之金屬蠟材、金屬共晶銲料材、金屬接著材等。As the bonding material, metal wax materials such as silver wax, metal eutectic solder materials, metal bonding materials, and the like can be used.

前述第一散熱片，在前述第一方向是比前述第二面還從前述第一貫通孔往外側突出亦可。The first heat sink may protrude outward from the first through hole in the first direction than the second surface.

第一散熱片，是從第一貫通孔突出至比第二面還外側，故即使第一散熱片為反曲成上凸的形狀，亦可迴避沒有與上述第二散熱片接觸的狀態。特別是，如上述般，主板為容易反曲成下凸的形狀，故將主板對第二散熱片向下按壓來固定，藉此，比主板更往下側突出的第一散熱片，會成為容易對第二散熱片面接觸的形狀。其結果，確保高散熱性。The first heat dissipation fin protrudes from the first through hole to the outside of the second surface. Therefore, even if the first heat dissipation fin is curved in an upward convex shape, the state where it is not in contact with the second heat dissipation fin can be avoided. In particular, as mentioned above, the motherboard is easy to bend into a downward convex shape. Therefore, the motherboard is pressed down to fix the second heat sink. Thereby, the first heat sink protruding below the motherboard becomes The shape is easy to contact the second heat sink. As a result, high heat dissipation is ensured.

前述接合材，在前述第一貫通孔內，僅形成在前述第一面側的區域亦可。The bonding material may be formed only in a region on the first surface side in the first through hole.

藉此，第一散熱片，具有：在主板之第一面側對主板固定的第一區域、在主板之第二面側沒有對主板固定的第二區域。Thereby, the first heat sink has: a first area fixed to the main board on the first surface side of the main board, and a second area not fixed to the main board on the second surface side of the main board.

前述半導體雷射光源裝置，亦可具有： 第二散熱片，其配置成與前述第一散熱片的前述第二區域接觸；以及 按壓構件，其用來固定前述第二散熱片與前述主板。The aforementioned semiconductor laser light source device may also have: A second heat sink configured to contact the second region of the first heat sink; and The pressing member is used to fix the second heat sink and the main board.

第二散熱片，可為具有鰭片等之空冷構件或排水管等之水冷構件的冷卻構件。又，第二散熱片，使前述冷卻構件單獨構成亦可，具備連結於前述冷卻構件的基台亦可。The second heat sink may be a cooling member having an air cooling member such as fins or a water cooling member such as a drain pipe. In addition, the second heat sink may be configured by the cooling member alone, or may be provided with a base connected to the cooling member.

複數個前述輔助座，在前述第一散熱片的面之中，配置在不與前述第一面平行的面上， 複數個前述半導體雷射元件，在複數個前述輔助座之面上配置成各自往前述第一方向射出光亦可。The plurality of auxiliary seats are arranged on a surface that is not parallel to the first surface among the surfaces of the first heat sink, The plurality of semiconductor laser elements may be arranged on the surface of the plurality of auxiliary seats so as to emit light in the first direction.

前述半導體雷射光源裝置，具有配置在前述第一散熱片之面上的鏡子， 複數個前述輔助座，在前述第一散熱片的面之中，配置在與前述第一面平行的面上， 複數個前述半導體雷射元件，在複數個前述輔助座之面上配置成各自往與前述第一方向及前述第二方向之雙方正交的第三方向射出光， 前述鏡子，將從複數個前述半導體雷射元件朝向前述第三方向射出的光之進行方向，變換成前述第一方向亦可。The semiconductor laser light source device has a mirror disposed on the surface of the first heat sink, The plurality of auxiliary seats are arranged on a surface parallel to the first surface among the surfaces of the first heat sink, The plurality of semiconductor laser elements are arranged on the surface of the plurality of auxiliary seats so as to emit light in a third direction orthogonal to both the first direction and the second direction, respectively, The mirror may transform the direction of light emitted from the plurality of semiconductor laser elements toward the third direction into the first direction.

前述第一金屬材料，是由鐵、鐵合金所成群之中選擇之1種以上的材料， 前述第二金屬材料，是由銅、銅合金所成群之中選擇之1種以上的材料亦可。 [發明之效果]The aforementioned first metal material is one or more materials selected from the group of iron and iron alloys, The aforementioned second metal material may be one or more materials selected from a group of copper and copper alloys. [Effects of Invention]

根據本發明的半導體雷射光源裝置，具備複數個半導體雷射元件，可實現高密度化與高散熱性之兩者。According to the semiconductor laser light source device of the present invention, a plurality of semiconductor laser elements are provided, and both high density and high heat dissipation can be achieved.

針對本發明之半導體雷射光源裝置的實施形態，參照圖式來說明。以下的各圖式，均為示意地圖示者，圖式上的尺寸比並不一定與實際的尺寸比一致。且，在各圖式間尺寸比也不一定一致。The embodiment of the semiconductor laser light source device of the present invention will be described with reference to the drawings. The following drawings are all schematically illustrated, and the size ratios on the drawings do not necessarily coincide with the actual size ratios. In addition, the size ratio between the various drawings is not necessarily the same.

[第一實施形態] 針對本發明之半導體雷射光源裝置的第一實施形態來說明。圖1，是將本實施形態之半導體雷射光源裝置的構造予以示意表示的立體圖。又，圖1，就容易理解的觀點，是以後述之罩蓋10的一部分被切斷的狀態來圖示。[First Embodiment] The first embodiment of the semiconductor laser light source device of the present invention will be described. FIG. 1 is a perspective view schematically showing the structure of the semiconductor laser light source device of this embodiment. In addition, FIG. 1 illustrates a state in which a part of the cover 10 described later is cut from an easy-to-understand viewpoint.

在以下的說明，適當參照圖1等所記載的XYZ座標系。In the following description, appropriately refer to the XYZ coordinate system described in FIG. 1 and the like.

如圖1所示般，半導體雷射光源裝置1，具備：沿著X方向複數配列的半導體雷射元件2、載放有各半導體雷射元件2的輔助座3、供輔助座3載放於面上的第一散熱片4、與第一散熱片4連結的主板5。As shown in FIG. 1, the semiconductor laser light source device 1 is provided with: semiconductor laser elements 2 arranged in plural along the X direction, an auxiliary base 3 on which each semiconductor laser element 2 is placed, and the auxiliary base 3 is placed on The first heat sink 4 on the surface and the main board 5 connected to the first heat sink 4.

半導體雷射元件2，含有基板與疊層於基板上之多層的半導體層，射出因應半導體層的構成材料而決定之波長的雷射光L2。例如，前述半導體層，含有由InGaP、或InGaAlP所成之活性層的情況，半導體雷射元件2，會射出波長在600nm〜800nm帶之所謂紅色光的雷射光L2。但是，本發明中，半導體雷射光源裝置1射出的雷射光L2之波長並未限定。The semiconductor laser element 2 includes a substrate and a multilayer semiconductor layer laminated on the substrate, and emits laser light L2 of a wavelength determined according to the constituent material of the semiconductor layer. For example, when the aforementioned semiconductor layer contains an active layer made of InGaP or InGaAlP, the semiconductor laser element 2 emits so-called red laser light L2 with a wavelength in the 600nm to 800nm band. However, in the present invention, the wavelength of the laser light L2 emitted by the semiconductor laser light source device 1 is not limited.

在本實施形態之例，如圖1所示般，各半導體雷射元件2是在XY平面上於X方向整列地配置。而且，半導體雷射光源裝置1，具有用來將從各半導體雷射元件2往Y方向射出的雷射光L2之進行方向變換成Z方向的鏡子12。被鏡子12改變進行方向後的雷射光L2，透過設在罩蓋10的窗部10a，而到達半導體雷射光源裝置1的外部。In the example of this embodiment, as shown in FIG. 1, the semiconductor laser elements 2 are arranged aligned in the X direction on the XY plane. Furthermore, the semiconductor laser light source device 1 has a mirror 12 for converting the proceeding direction of the laser light L2 emitted from each semiconductor laser element 2 in the Y direction into the Z direction. The laser light L2 whose progress direction is changed by the mirror 12 passes through the window portion 10 a provided in the cover 10 and reaches the outside of the semiconductor laser light source device 1.

罩蓋10，是以使內部氣密，藉此保護半導體雷射元件2的目的來設置，例如對於主板5以電阻焊接等之方法來接合。The cover 10 is provided for the purpose of making the inside airtight, thereby protecting the semiconductor laser element 2. For example, the main board 5 is joined by resistance welding or the like.

本說明書中，Z方向對應於「第一方向」，X方向對應於「第二方向」，Y方向對應於「第三方向」。In this manual, the Z direction corresponds to the "first direction", the X direction corresponds to the "second direction", and the Y direction corresponds to the "third direction".

輔助座3，例如在面上設有未圖示的電極配線，藉此形成用來對半導體雷射元件2供電的電性連接。且，輔助座3，具有將半導體雷射元件2之發光時所產生的熱予以導向第一散熱片4側的功能。輔助座3，是鑑於散熱性、絕緣性、與半導體雷射元件2的線膨脹係數差等，來選擇適當材料。作為一例，輔助座3，是由AlN、Al2 O3 、SiC、CuW等之材料所構成。The auxiliary base 3 is provided with, for example, electrode wiring not shown on the surface, thereby forming an electrical connection for supplying power to the semiconductor laser element 2. In addition, the auxiliary base 3 has a function of guiding the heat generated when the semiconductor laser element 2 emits light to the side of the first heat sink 4. The auxiliary seat 3 is selected from a suitable material in consideration of heat dissipation, insulation, and the difference in linear expansion coefficient from the semiconductor laser element 2. As an example, the auxiliary seat 3 is made of materials such as AlN, Al 2 O 3 , SiC, and CuW.

本實施形態中，各輔助座3，載放於與第一散熱片4之XY平面平行的面上。圖2，為了容易理解，是從圖1省略罩蓋10及鏡子12之圖示的圖。In this embodiment, each auxiliary seat 3 is placed on a surface parallel to the XY plane of the first heat sink 4. 2 is a diagram in which illustration of the cover 10 and the mirror 12 is omitted from FIG. 1 for easy understanding.

主板5，具有：第一面5a、對於第一面5a在Z方向面對之位置的第二面5b。主板5，如圖3所示般，具有從第一面5a對第二面5b於Z方向貫通的第一貫通孔21與第二貫通孔22。圖3，是從Z方向觀看主板5時的示意俯視圖。如圖3所示般，在本實施形態之例，主板5，具有：一個第一貫通孔21、兩個第二貫通孔(22、22)。The main board 5 has a first surface 5a and a second surface 5b facing the first surface 5a in the Z direction. As shown in FIG. 3, the main board 5 has a first through hole 21 and a second through hole 22 penetrating in the Z direction from the first surface 5 a to the second surface 5 b. FIG. 3 is a schematic plan view of the main board 5 when viewed from the Z direction. As shown in FIG. 3, in the example of this embodiment, the main board 5 has one first through hole 21 and two second through holes (22, 22).

主板5，如上述般，以電阻焊接等之方法來對第一面5a接合罩蓋10。因此，主板5，是由可電阻焊接等的材料所構成，例如由鐵、鐵合金等所構成。As for the main board 5, the cover 10 is joined to the first surface 5a by a method such as resistance welding as described above. Therefore, the main board 5 is made of materials that can be resistance welded, for example, iron, iron alloy, or the like.

在本實施形態，於主板5的面上，在Y方向之非對稱的位置形成有第一貫通孔21。亦即，主板5，是在Y方向於第一貫通孔21之外側的位置，具有：寬度較廣的區域(第一部分51)、寬度較窄的區域(第二部分52)。而且，於主板5的第一部分51內，在X方向分開的兩處位置形成有第二貫通孔22。In this embodiment, the first through hole 21 is formed on the surface of the main plate 5 at asymmetrical positions in the Y direction. That is, the main plate 5 is a position outside the first through hole 21 in the Y direction, and has a wide area (first portion 51) and a narrow area (second portion 52). In addition, in the first portion 51 of the main plate 5, second through holes 22 are formed at two positions separated in the X direction.

第一貫通孔21，是供第一散熱片4嵌合用的孔部。如圖1及圖2所示般，第一散熱片4，是配置成於Z方向嵌入至第一貫通孔21內。在本實施形態，是在第一貫通孔21之露出於主板5之第一面5a側的第一散熱片4之面上，載放有輔助座3及半導體雷射元件2。The first through hole 21 is a hole for fitting the first heat sink 4. As shown in FIGS. 1 and 2, the first heat sink 4 is arranged to be inserted into the first through hole 21 in the Z direction. In this embodiment, the auxiliary seat 3 and the semiconductor laser element 2 are placed on the surface of the first heat sink 4 of the first through hole 21 exposed on the first surface 5a side of the main board 5.

第一散熱片4，具有將半導體雷射元件2之發光時所產生的熱予以散熱的功能。因此，第一散熱片4，是由熱傳導率較高的材料所構成為佳。更詳細來說，第一散熱片4，是由熱傳導率比主板5還高的材料所構成，例如由銅、銅合金等所構成。The first heat sink 4 has a function of dissipating heat generated when the semiconductor laser element 2 emits light. Therefore, the first heat sink 4 is preferably made of a material with higher thermal conductivity. In more detail, the first heat sink 4 is made of a material with a higher thermal conductivity than the main board 5, such as copper, copper alloy, or the like.

如圖2所示般，在本實施形態，第一散熱片4，是在Z方向配置成比主板5的第二面5b還突出長度d4。As shown in FIG. 2, in this embodiment, the first heat sink 4 is arranged in the Z direction so as to protrude longer than the second surface 5b of the main board 5 by a length d4.

設在兩處的第二貫通孔(22、22)，是讓供電銷7***用的孔部。供電銷7，是由科伐合金等之鐵合金等的導電性材料所構成。更詳細來說，於第二貫通孔22內，嵌入有形成為中空狀(筒狀)之低融點玻璃等的絕緣構件13，並在其內側***有供電銷7，藉此確保供電銷7與主板5之間的絕緣性。供電銷7，在主板5之第二面5b側的位置與後述的供電基板15電性連接，在第一面5a側的位置與半導體雷射元件2電性連接。藉此，從供電基板15透過供電銷7來對半導體雷射元件2供電。The second through-holes (22, 22) provided at two places are holes for inserting the power supply pin 7. The power supply pin 7 is made of conductive materials such as iron alloys such as Kovar. In more detail, in the second through hole 22, an insulating member 13 formed in a hollow (cylindrical) shape such as low melting point glass is inserted, and a power supply pin 7 is inserted inside it, thereby ensuring that the power supply pin 7 and Insulation between the main boards 5. The power supply pin 7 is electrically connected to the power supply substrate 15 described later at a position on the second surface 5b side of the main board 5, and is electrically connected to the semiconductor laser element 2 at a position on the first surface 5a side. Thereby, power is supplied to the semiconductor laser element 2 from the power supply board 15 through the power supply pin 7.

第一散熱片4與主板5，是在第一貫通孔21內藉由接合材6來接合。作為接合材6，可利用銀蠟等之金屬蠟材、金屬共晶銲料材、金屬接著材等。The first heat sink 4 and the main board 5 are joined by the joining material 6 in the first through hole 21. As the bonding material 6, metal wax materials such as silver wax, metal eutectic solder materials, metal bonding materials, and the like can be used.

本實施形態中，第一散熱片4，是在主板5的第一面5a側藉由接合材6來與主板5接合，另一方面，在第二面5b側沒有與主板5接合。針對此點，參照圖4、圖5A及圖5B來說明。圖4，是將圖1所示的半導體雷射光源裝置1從Z方向觀看時的示意俯視圖。且，圖5A及圖5B，均為圖4內的A1-A1線剖面圖，但為了方便說明，標記的方法不同。且，為了容易理解，在圖5A及圖5B是將一部分的構件大小誇大地圖示。In this embodiment, the first heat sink 4 is joined to the main board 5 by the bonding material 6 on the first surface 5a side of the main board 5, on the other hand, it is not joined to the main board 5 on the second surface 5b side. For this point, description will be made with reference to FIGS. 4, 5A, and 5B. 4 is a schematic plan view of the semiconductor laser light source device 1 shown in FIG. 1 when viewed from the Z direction. In addition, FIGS. 5A and 5B are both cross-sectional views taken along the line A1-A1 in FIG. 4, but for convenience of description, the marking method is different. In addition, in order to make it easier to understand, in FIGS. 5A and 5B, the size of a part of the members is exaggerated and shown.

如上述般，嵌入至形成在主板5的第一貫通孔21內的第一散熱片4，是在第一貫通孔21內藉由接合材6來與主板5接合。且，配置成貫通於第二貫通孔22內的供電銷7，是藉由低融點玻璃等之絕緣構件13來確保與主板5之間的絕緣性。又，在本實施形態之例，在主板5之第二面5b側露出的第一散熱片4之Z方向的長度d4，比在主板5之第二面5b側露出的供電銷7之長度d7還長。As described above, the first heat sink 4 embedded in the first through hole 21 formed in the main board 5 is joined to the main board 5 by the bonding material 6 in the first through hole 21. In addition, the power supply pin 7 arranged to penetrate through the second through hole 22 is insulated from the main board 5 by an insulating member 13 such as low melting point glass. Also, in the example of this embodiment, the length d4 of the first heat sink 4 exposed on the second surface 5b side of the main board 5 in the Z direction is longer than the length d7 of the power supply pin 7 exposed on the second surface 5b side of the main board 5 Still long.

如圖5A及圖5B所示般，第一散熱片4，在Z方向是只有第一面5a側藉由接合材6來與主板5接合。其結果如圖5B所示般，第一散熱片4，在Z方向具有：藉由接合材6來與主板5固定的第一區域4a、沒有對主板5固定的第二區域4b。As shown in FIGS. 5A and 5B, the first heat sink 4 is bonded to the main board 5 by the bonding material 6 only on the side of the first surface 5 a in the Z direction. As a result, as shown in FIG. 5B, the first heat sink 4 has, in the Z direction, a first area 4 a fixed to the main board 5 by the bonding material 6 and a second area 4 b not fixed to the main board 5.

圖6，是將半導體雷射光源裝置1的構造予以示意表示的剖面圖，與圖5A及圖5B相較之下，進一步圖示出第二散熱片31及供電基板15。供電基板15，是實裝有用來控制對半導體雷射元件2之供電的電路元件(未圖示)的基板。又，於圖6，圖示有用來將供電銷7與半導體雷射元件2電性連接的導線18。6 is a cross-sectional view schematically showing the structure of the semiconductor laser light source device 1. Compared with FIGS. 5A and 5B, the second heat sink 31 and the power supply substrate 15 are further shown. The power supply substrate 15 is a substrate on which a circuit element (not shown) for controlling power supply to the semiconductor laser element 2 is actually mounted. In addition, in FIG. 6, a wire 18 for electrically connecting the power supply pin 7 and the semiconductor laser element 2 is shown.

如上述般，第一散熱片4，具有將半導體雷射元件2所產生的熱予以散熱的功能。就進一步提高該散熱效果的觀點來看，使第一散熱片4，接觸於由空冷構件或水冷構件所成的第二散熱片31為佳。在此，如上述般，第一散熱片4，在Z方向具有沒有與主板5接合的第二區域4b，故在使用接合材6來接合第一散熱片4與主板5之際，即使經過加熱及冷卻的工程，而使第一散熱片4變形，亦容易確保與第二散熱片31的面接觸。針對此點待留後述。As described above, the first heat sink 4 has a function of dissipating the heat generated by the semiconductor laser element 2. From the viewpoint of further improving the heat dissipation effect, it is preferable that the first heat dissipation fin 4 is in contact with the second heat dissipation fin 31 formed of an air cooling member or a water cooling member. Here, as described above, the first heat sink 4 has a second region 4b that is not bonded to the main board 5 in the Z direction. Therefore, when the bonding material 6 is used to bond the first heat sink 4 and the main board 5, even if heated And the cooling process, so that the first heat sink 4 is deformed, it is easy to ensure the surface contact with the second heat sink 31. This point will be described later.

且，根據本實施形態的半導體雷射光源裝置1，是在Z方向，使第一散熱片4配置成比供電銷7還要突出。其結果，如圖6所示般，可使供電基板15配置在主板5的第二面5b與第二散熱片31之間的位置。In addition, according to the semiconductor laser light source device 1 of this embodiment, the first heat sink 4 is arranged in the Z direction so as to protrude more than the power supply pin 7. As a result, as shown in FIG. 6, the power supply board 15 can be arranged at a position between the second surface 5 b of the main board 5 and the second heat sink 31.

圖7，是將含有供電基板15的半導體雷射光源裝置1從Z方向觀看時的示意俯視圖。如圖6及圖7所示般，供電基板15，是在主板5的第二面5b側配置成於X方向延伸。供電銷7，例如是藉由銲料材16來對供電基板15形成電性連接。FIG. 7 is a schematic plan view of the semiconductor laser light source device 1 including the power supply substrate 15 when viewed from the Z direction. As shown in FIGS. 6 and 7, the power supply substrate 15 is arranged on the second surface 5 b side of the main board 5 so as to extend in the X direction. The power supply pins 7 are electrically connected to the power supply substrate 15 by the solder material 16, for example.

根據該構造，供電銷7，在Z方向的突出長度是比第一散熱片4還短，故不需要透過用來配置供電基板15的鋁壓鑄等之基台，就能直接使第一散熱片4對第二散熱片31接觸。由於鋁壓鑄等之基台，熱傳導率比第二散熱片31還低，故該構造可進一步提高散熱性。According to this structure, the protruding length of the power supply pin 7 in the Z direction is shorter than that of the first heat sink 4. Therefore, the first heat sink can be directly installed without passing through a base such as aluminum die-casting for arranging the power supply board 15. 4 pairs of second heat sinks 31 are in contact. Since the base base such as aluminum die-cast has lower thermal conductivity than the second heat sink 31, this structure can further improve heat dissipation.

此外，第一散熱片4，是在與XY平面平行的方向具有一定程度之寬廣度的形狀，以具有該寬廣度的模樣嵌入至第一貫通孔21內。藉此，作為散熱經路來利用之第一散熱片4的剖面積可確保成較大，故散熱效率提高。In addition, the first heat sink 4 has a shape having a certain degree of width in a direction parallel to the XY plane, and is inserted into the first through hole 21 in a pattern having the width. Thereby, the cross-sectional area of the first radiating fin 4 used as a heat dissipation path can be ensured to be large, so the heat dissipation efficiency is improved.

圖8，是經過使用接合材6來接合第一散熱片4與主板5的工程之後，將對第一散熱片4及主板5施加之應力予以示意說明的圖。FIG. 8 is a diagram schematically illustrating the stress applied to the first heat sink 4 and the main board 5 after the process of joining the first heat sink 4 and the main board 5 by using the bonding material 6.

在形成於主板5的第一貫通孔21之內壁設有由金屬蠟等所成的接合材6，在其內側嵌入第一散熱片4。之後，加熱至超過金屬蠟之融點的溫度(例如800℃左右)，藉此使融解的接合材6附著於位在第一貫通孔21內的第一散熱片4之外壁。之後，冷卻至室溫下而使接合材6凝固，藉此，使第一散熱片4與主板5固定。A bonding material 6 made of metal wax or the like is provided on the inner wall of the first through hole 21 formed in the main plate 5, and the first heat sink 4 is embedded inside the bonding material. After that, it is heated to a temperature exceeding the melting point of the metal wax (for example, about 800° C.), whereby the molten bonding material 6 is attached to the outer wall of the first heat sink 4 located in the first through hole 21. After that, it is cooled to room temperature and the bonding material 6 is solidified, thereby fixing the first heat sink 4 and the main board 5.

圖8中，(a)是表示加熱前之時間點之第一散熱片4及主板5之狀態的圖。且，(b)是示意表示在加熱後到冷卻至常溫為止的狀態中，對於第一散熱片4及主板5所產生之應力的圖。又，在圖8(b)，力的朝向是以箭頭的方向來表示，力的大小是以箭頭的長度來表示。In FIG. 8, (a) is a figure which shows the state of the 1st heat sink 4 and the main board 5 at the time point before heating. In addition, (b) is a diagram schematically showing the stress generated on the first heat sink 4 and the main board 5 in the state after heating and cooling to normal temperature. In addition, in FIG. 8(b), the direction of the force is indicated by the direction of the arrow, and the magnitude of the force is indicated by the length of the arrow.

藉由加熱使第一散熱片4及主板5膨脹。此處，在第一散熱片4由Cu(銅)所成，且主板5由Fe(鐵)所成的情況，熱膨脹係數是第一散熱片4比主板5還大。因此，在冷卻時，對於第一散熱片4，是作用有比主板5還大的欲收縮之力。The first heat sink 4 and the main board 5 are expanded by heating. Here, when the first heat sink 4 is made of Cu (copper) and the main board 5 is made of Fe (iron), the coefficient of thermal expansion is that the first heat sink 4 is larger than the main board 5. Therefore, during cooling, the first heat sink 4 has a greater force to shrink than the main board 5.

此處，如上述般，第一散熱片4，是在主板5的第一面5a側以接合材6來與主板5固定。因此，第一散熱片4之靠近主板5之第一面5a側的區域(第一區域4a)，是藉由以接合材6來固定的主板5，來抵抗欲收縮之力。其結果，第一散熱片4的第一區域4a，受到從主板5朝向外側的拉伸應力(Sr1a、Sr2a)。Here, as described above, the first heat sink 4 is fixed to the main board 5 by the bonding material 6 on the first surface 5 a side of the main board 5. Therefore, the area (first area 4a) of the first heat sink 4 close to the first surface 5a of the main board 5 is the main board 5 fixed by the bonding material 6 to resist the force of contraction. As a result, the first region 4a of the first heat sink 4 receives tensile stress (Sr1a, Sr2a) from the main plate 5 toward the outside.

另一方面，第一散熱片4，在主板5的第二面5b側，並沒有以接合材6來與主板5固定。因此，第一散熱片4的第二區域4b，不會受到來自主板5的拉伸應力，只作用有欲收縮之力(Sr3a、Sr4a)。On the other hand, the first heat sink 4 is not fixed to the main board 5 with the bonding material 6 on the second surface 5b side of the main board 5. Therefore, the second area 4b of the first heat sink 4 does not receive the tensile stress from the main board 5, and only the force (Sr3a, Sr4a) to contract is applied.

反之，在主板5之靠近第一面5a的區域，作用有欲對第一散熱片4收縮的力，故受到朝向內側的拉伸應力(Sr1b、Sr2b)。另一方面，在靠近第二面5b的區域，並沒有以接合材6來與第一散熱片4固定，故不會受到來自第一散熱片4的拉伸應力，只有作用欲收縮之力(Sr3b、Sr4b)。但是，主板5的構成材料，其熱膨脹係數比第一散熱片4的構成材料還低，故與第一散熱片4的收縮力(Sr3a、Sr4a)相較之下，主板5的收縮力(Sr3b、Sr4b)較小。Conversely, in the area of the main board 5 close to the first surface 5a, a force to contract the first heat sink 4 acts, and therefore, tensile stress (Sr1b, Sr2b) toward the inside is applied. On the other hand, in the area close to the second surface 5b, the bonding material 6 is not fixed to the first heat sink 4, so the tensile stress from the first heat sink 4 is not received, and only the force to contract ( Sr3b, Sr4b). However, the constituent material of the main board 5 has a lower thermal expansion coefficient than the constituent material of the first heat sink 4, so the contraction force of the main board 5 (Sr3b) is lower than the contraction force (Sr3a, Sr4a) of the first heat sink 4 , Sr4b) is smaller.

也就是說，第一散熱片4，是在主板5的第一面5a側作用有往外側拉伸的應力(Sr1a、Sr2a)，在主板5的第二面5b側作用有欲往內側收縮之力(Sr3a、Sr4a)。其結果，第一散熱片4，容易成為往主板5的第一面5a側，亦即往+Z方向反曲成凸出的形狀。In other words, the first heat sink 4 acts on the first surface 5a side of the main board 5 with stresses (Sr1a, Sr2a) extending outward, and acts on the second surface 5b side of the main board 5 to shrink inwardly. Force (Sr3a, Sr4a). As a result, the first heat sink 4 is likely to be curved into a convex shape toward the first surface 5a side of the main board 5, that is, in the +Z direction.

反之，主板5，是在第一面5a側作用有往內側拉伸的應力(Sr1b、Sr2b)，在第二面5b側作用有欲往外側收縮之力(Sr3b、Sr4b)。其結果，主板5，容易成為往第二面5b側，亦即往-Z方向反曲成凸出的形狀。On the other hand, the main plate 5 acts on the first surface 5a side with stresses (Sr1b, Sr2b) extending inwardly, and acts on the second surface 5b side with forces (Sr3b, Sr4b) to contract outward. As a result, the main plate 5 is likely to be curved into a convex shape toward the second surface 5b side, that is, in the -Z direction.

其結果，如圖9示意表示般，將反曲成往-Z方向凸出之形狀的主板5，透過按壓構件33來往-Z方向按壓(外力P1)，藉此容易使第一散熱片4對第二散熱片31面接觸。藉此，可使半導體雷射元件2所產生的熱透過經路Th2來有效率地散熱。圖9，是示意表示將第一散熱片4及主板5對第二散熱片31固定之方法之一例的圖。但是，為了方便說明，是將反曲等的形狀極為誇大地描繪。As a result, as shown schematically in FIG. 9, the main board 5 that is curved into a shape protruding in the -Z direction is pressed back and forth in the -Z direction through the pressing member 33 (external force P1), thereby easily aligning the first heat sink 4 The second heat sink 31 is in surface contact. Thereby, the heat generated by the semiconductor laser element 2 can be efficiently dissipated through the path Th2. FIG. 9 is a diagram schematically showing an example of a method of fixing the first heat sink 4 and the main board 5 to the second heat sink 31. However, for the convenience of explanation, the shape such as recurve is drawn extremely exaggerated.

作為按壓構件33，例如可使用鋁、鋁合金、鐵合金。且，在主板5之反曲較大的情況，如圖9所示般，在主板5與第二散熱片31之間設置墊片35亦可。墊片35，例如可使用銅、銅合金、鋁、鋁合金、鐵合金。As the pressing member 33, for example, aluminum, aluminum alloy, or iron alloy can be used. Moreover, in the case where the recurve of the main board 5 is large, as shown in FIG. 9, a spacer 35 may be provided between the main board 5 and the second heat sink 31. For the gasket 35, for example, copper, copper alloy, aluminum, aluminum alloy, and iron alloy can be used.

此外，如圖4所示般，將半導體雷射元件2，配置在第一散熱片4的面上之中靠近主板5之第一部分51那側為佳。在Y方向長度較長的第一部分51，與在Y方向的長度比第一部分51還短的第二部分52相較之下，冷卻時產生的拉伸應力較大。亦即，圖8中，應力Sr1a比應力Sr2a還大。其結果，在冷卻工程之後，第一散熱片4，靠近第一部分51之側會往-Z方向位移(上述之往Z方向的反曲量變大)。因此，在該區域附近配置半導體雷射元件2，藉此使與第二散熱片31之間的距離變近，故使配置有成為熱源之半導體雷射元件2那側確實地與第二散熱片31接觸，進一步提高散熱效果。In addition, as shown in FIG. 4, it is better to arrange the semiconductor laser element 2 on the side of the first heat sink 4 close to the first portion 51 of the main board 5. The first portion 51 having a longer length in the Y direction is lower than the second portion 52 having a shorter length in the Y direction than the first portion 51, and the tensile stress generated during cooling is greater. That is, in FIG. 8, the stress Sr1a is larger than the stress Sr2a. As a result, after the cooling process, the side of the first heat sink 4 close to the first portion 51 will be displaced in the -Z direction (the aforementioned amount of reflex in the Z direction becomes larger). Therefore, the semiconductor laser element 2 is arranged near this area, thereby shortening the distance from the second heat sink 31, so that the side where the semiconductor laser element 2 serving as the heat source is arranged is surely connected to the second heat sink 31. 31 contacts to further improve the heat dissipation effect.

又，上述實施形態中，舉例說明了在X方向，第二貫通孔22配置在與半導體雷射元件2相同的座標位置的構造。亦即，舉例說明了貫通於第二貫通孔22來配置的供電銷7，是配置在與半導體雷射元件2相同的座標位置的構造。但是，如圖10所示般，供電銷7(及該供電銷7所***之第二貫通孔22)，並不一定要在X方向配置在與半導體雷射元件2相同的座標位置亦可。在以下的各實施形態中也是一樣。Furthermore, in the above-mentioned embodiment, the structure in which the second through-hole 22 is arranged at the same coordinate position as the semiconductor laser element 2 in the X direction has been exemplified. In other words, the power supply pin 7 arranged to penetrate through the second through hole 22 is described as an example of a structure in which the power supply pin 7 is arranged at the same coordinate position as the semiconductor laser element 2. However, as shown in FIG. 10, the power supply pin 7 (and the second through hole 22 into which the power supply pin 7 is inserted) does not necessarily have to be arranged at the same coordinate position as the semiconductor laser element 2 in the X direction. The same applies to the following embodiments.

[第二實施形態] 針對本發明之半導體雷射光源裝置的第二實施形態，以與第一實施形態不同的部分為中心來說明。[Second Embodiment] Regarding the second embodiment of the semiconductor laser light source device of the present invention, the description will be focused on the parts different from the first embodiment.

圖11，是將本實施形態之半導體雷射光源裝置的構造予以示意表示的立體圖，與圖1同樣地，以罩蓋10的一部分被切斷的狀態來圖示。圖12，是從圖11省略罩蓋10之圖示的圖。圖13，是將圖11所示的半導體雷射光源裝置1從Z方向觀看時的示意俯視圖。圖14，是圖13內的A2-A2線剖面圖，是模仿圖5B的標記方法來圖示者。FIG. 11 is a perspective view schematically showing the structure of the semiconductor laser light source device of the present embodiment, and similarly to FIG. 1, it is shown in a state where a part of the cover 10 is cut off. FIG. 12 is a diagram omitting the illustration of the cover 10 from FIG. 11. FIG. 13 is a schematic plan view of the semiconductor laser light source device 1 shown in FIG. 11 when viewed from the Z direction. FIG. 14 is a cross-sectional view taken along the line A2-A2 in FIG. 13, which is a representation that imitates the marking method of FIG. 5B.

在本實施形態，與第一實施形態不同，半導體雷射光源裝置1不具備鏡子12。各半導體雷射元件2及各輔助座3，是配置在第一散熱片4的面之中沒有與主板5之第一面5a平行的面(在此是與XZ平面平行的面)上。又，各半導體雷射元件2及各輔助座3，在X方向整列地配置這點，是與第一實施形態一樣。In this embodiment, unlike the first embodiment, the semiconductor laser light source device 1 does not include a mirror 12. Each semiconductor laser element 2 and each auxiliary seat 3 are arranged on a surface of the first heat sink 4 that is not parallel to the first surface 5a of the main board 5 (here, a surface parallel to the XZ plane). In addition, the point that each semiconductor laser element 2 and each auxiliary base 3 are arranged in a row in the X direction is the same as the first embodiment.

各半導體雷射元件2，配置成往Z方向射出雷射光L2。藉此，該雷射光L2，會透過設在罩蓋10的窗部10a，而到達半導體雷射光源裝置1的外部。Each semiconductor laser element 2 is arranged to emit laser light L2 in the Z direction. Thereby, the laser light L2 passes through the window portion 10a provided in the cover 10 and reaches the outside of the semiconductor laser light source device 1.

如圖14所示般，在本實施形態也是，第一散熱片4，在Z方向是只有第一面5a側藉由接合材6來與主板5接合。其結果如圖14所示般，第一散熱片4，在Z方向具有：藉由接合材6來與主板5固定的第一區域4a、沒有對主板5固定的第二區域4b。藉此，與第一實施形態的半導體雷射光源裝置1同樣地，容易使第一散熱片4對第二散熱片31(參照圖6)面接觸，謀求散熱性的提升。As shown in FIG. 14, also in this embodiment, the first heat sink 4 is joined to the main board 5 by the joining material 6 only on the first surface 5a side in the Z direction. As a result, as shown in FIG. 14, the first heat sink 4 has, in the Z direction, a first area 4 a fixed to the main board 5 by the bonding material 6 and a second area 4 b that is not fixed to the main board 5. Thereby, similarly to the semiconductor laser light source device 1 of the first embodiment, it is easy to bring the first heat sink 4 to the second heat sink 31 (see FIG. 6) in surface contact, thereby improving heat dissipation.

且，與第一實施形態同樣地，在主板5之第二面5b側露出的第一散熱片4之Z方向的長度d4，比在主板5之第二面5b側露出的供電銷7之長度d7還長亦可。根據該構造，參照圖6而如上述般，不需要透過用來配置供電基板15的鋁壓鑄等之基台，就能直接使第一散熱片4對第二散熱片31接觸，故提升散熱性。Also, as in the first embodiment, the length d4 of the first heat sink 4 exposed on the second surface 5b side of the main board 5 in the Z direction is longer than the length of the power supply pin 7 exposed on the second surface 5b side of the main board 5 d7 can be long. According to this structure, referring to FIG. 6 and as described above, the first heat sink 4 can be directly contacted with the second heat sink 31 without the need for a base such as aluminum die-casting for arranging the power supply board 15, thereby improving heat dissipation. .

[第三實施形態] 針對本發明之半導體雷射光源裝置的第三實施形態，以與上述各實施形態不同的部分為中心來說明。[Third Embodiment] Regarding the third embodiment of the semiconductor laser light source device of the present invention, the description will be focused on the parts that are different from the foregoing embodiments.

圖15，是將本實施形態之半導體雷射光源裝置的構造予以示意表示的立體圖，與圖1同樣地，以罩蓋10的一部分被切斷的狀態來圖示。本實施形態的半導體雷射光源裝置1，與第一實施形態相較之下，供電銷7從主板5的第二面5b往Z方向突出的長度，是比第一散熱片4的突出長度還長，僅在這點不同。FIG. 15 is a perspective view schematically showing the structure of the semiconductor laser light source device of the present embodiment, and similarly to FIG. 1, it is shown in a state where a part of the cover 10 is cut. In the semiconductor laser light source device 1 of this embodiment, compared with the first embodiment, the length of the power supply pin 7 protruding from the second surface 5b of the main board 5 in the Z direction is longer than the protruding length of the first heat sink 4. Long, different only in this point.

圖16，是從圖15省略罩蓋10及鏡子12之圖示的圖。又，本實施形態之半導體雷射光源裝置1的俯視圖，是與圖4所示之第一實施形態之半導體雷射光源裝置1的俯視圖一樣，故省略圖示。圖17，是本實施形態的半導體雷射光源裝置1中，以圖4內的A1-A1線來切斷時的示意俯視圖，為模仿圖5B的標記方法來圖示者。FIG. 16 is a diagram omitting the illustration of the cover 10 and the mirror 12 from FIG. 15. In addition, the top view of the semiconductor laser light source device 1 of the present embodiment is the same as the top view of the semiconductor laser light source device 1 of the first embodiment shown in FIG. 4, so illustration is omitted. FIG. 17 is a schematic plan view of the semiconductor laser light source device 1 according to the present embodiment when it is cut along the line A1-A1 in FIG. 4, and is a diagram that imitates the marking method of FIG. 5B.

本實施形態的半導體雷射光源裝置1，供電銷7從主板5的第二面5b側往Z方向突出的長度較長。因此，在第一實施形態及第二實施形態中如上述般，在Z方向，沒辦法在第一散熱片4之-Z方向的端面與主板5的第二面5b之間的位置配置供電基板15。因此，半導體雷射光源裝置1，例如圖18所示般，可設置用來配置供電基板15之由鋁壓鑄等所成的基台37，並將供電基板15安裝於基台37。又，基台37，設有用來配置供電銷7及供電基板15的凹部37a亦可。In the semiconductor laser light source device 1 of this embodiment, the power supply pin 7 protrudes in the Z direction from the second surface 5b side of the main board 5 with a longer length. Therefore, in the first and second embodiments, as described above, in the Z direction, there is no way to arrange the power supply board between the end surface of the first heat sink 4 in the -Z direction and the second surface 5b of the main board 5 15. Therefore, the semiconductor laser light source device 1 can be provided with a base 37 made of aluminum die-casting or the like for arranging the power supply substrate 15 as shown in, for example, FIG. 18, and the power supply substrate 15 can be mounted on the base 37. In addition, the base 37 may be provided with a recess 37a for arranging the power supply pins 7 and the power supply board 15.

該構造的情況，是將第二散熱片31配置成與基台37的-Z側之面接觸。In the case of this structure, the second heat sink 31 is arranged to be in contact with the surface on the −Z side of the base 37.

在本實施形態也是，第一散熱片4，在Z方向是只有第一面5a側藉由接合材6來與主板5接合。其結果如圖17所示般，第一散熱片4，在Z方向具有：藉由接合材6來與主板5固定的第一區域4a、沒有對主板5固定的第二區域4b。藉此，使第一散熱片4容易對基台37面接觸。基台37，熱傳導率是比第二散熱片31還低，故散熱性是比第一實施形態的半導體雷射光源裝置1還低。但是，若使第一散熱片4與基台37的接觸面積降低的話，會進一步使散熱性降低。亦即，即使如本實施形態般，使供電銷7的突出長度變長，且具備基台37的構造之情況，只要將第一散熱片4之中靠主板5之第一面5a側藉由接合材6來對主板5固定，且主板5的第二面5b側不設置接合材6而不對主板5固定，藉此可提高散熱性。Also in this embodiment, the first heat sink 4 is joined to the main board 5 by the joining material 6 only on the first surface 5a side in the Z direction. As a result, as shown in FIG. 17, the first heat sink 4 has, in the Z direction, a first area 4 a fixed to the main board 5 by the bonding material 6 and a second area 4 b that is not fixed to the main board 5. Thereby, the first heat sink 4 can easily contact the base 37 on the surface. The base 37 has a lower thermal conductivity than the second heat sink 31, so the heat dissipation is lower than the semiconductor laser light source device 1 of the first embodiment. However, if the contact area between the first heat sink 4 and the base 37 is reduced, the heat dissipation performance is further reduced. That is, even if the protruding length of the power supply pin 7 is increased as in this embodiment, and the structure of the base 37 is provided, it is only necessary to place the first heat sink 4 on the first surface 5a side of the main board 5 The bonding material 6 is used to fix the main board 5, and the bonding material 6 is not provided on the second surface 5b side of the main board 5 and is not fixed to the main board 5, thereby improving heat dissipation.

[第四實施形態] 針對本發明之半導體雷射光源裝置的第四實施形態，以與上述各實施形態不同的部分為中心來說明。[Fourth Embodiment] Regarding the fourth embodiment of the semiconductor laser light source device of the present invention, the description will be focused on the parts that are different from the foregoing embodiments.

圖19，是將本實施形態之半導體雷射光源裝置的構造予以示意表示的立體圖，與圖1同樣地，以罩蓋10的一部分被切斷的狀態來圖示。本實施形態的半導體雷射光源裝置1，與第二實施形態相較之下，供電銷7從主板5的第二面5b往Z方向突出的長度，是比第一散熱片4的突出長度還長，僅在這點不同。FIG. 19 is a perspective view schematically showing the structure of the semiconductor laser light source device of the present embodiment, and similarly to FIG. 1, it is shown in a state where a part of the cover 10 is cut off. In the semiconductor laser light source device 1 of this embodiment, compared with the second embodiment, the length of the power supply pin 7 protruding from the second surface 5b of the main board 5 in the Z direction is longer than the protruding length of the first heat sink 4. Long, different only in this point.

圖20，是從圖19省略罩蓋10之圖示的圖。又，本實施形態之半導體雷射光源裝置1的俯視圖，是與圖13所示之第二實施形態之半導體雷射光源裝置1的俯視圖一樣，故省略圖示。圖21，是本實施形態的半導體雷射光源裝置1中，以圖13內的A2-A2線來切斷時的示意俯視圖，為模仿圖5B的標記方法來圖示者。FIG. 20 is a diagram omitting the illustration of the cover 10 from FIG. 19. In addition, the plan view of the semiconductor laser light source device 1 of the present embodiment is the same as the plan view of the semiconductor laser light source device 1 of the second embodiment shown in FIG. 13, so illustration is omitted. FIG. 21 is a schematic plan view of the semiconductor laser light source device 1 according to the present embodiment when it is cut along the line A2-A2 in FIG. 13, and is illustrated in imitation of the marking method in FIG. 5B.

在本實施形態也是與第三實施形態同樣地，供電銷7之從主板5之第二面5b側往Z方向突出的長度較長，故與第三實施形態同樣地，可設置用來配置供電基板15之由鋁壓鑄等所成的基台37，並將供電基板15安裝於基台37。In this embodiment, as in the third embodiment, the length of the power supply pin 7 protruding in the Z direction from the second surface 5b side of the main board 5 is longer, so similar to the third embodiment, it can be provided for distributing power supply. The base 37 of the substrate 15 is made of aluminum die-casting or the like, and the power supply board 15 is mounted on the base 37.

在本實施形態也是，第一散熱片4，在Z方向是只有第一面5a側藉由接合材6來與主板5接合。其結果如圖21所示般，第一散熱片4，在Z方向具有：藉由接合材6來與主板5固定的第一區域4a、沒有對主板5固定的第二區域4b。藉此，使第一散熱片4容易對基台37面接觸，而提高散熱性。Also in this embodiment, the first heat sink 4 is joined to the main board 5 by the joining material 6 only on the first surface 5a side in the Z direction. As a result, as shown in FIG. 21, the first heat sink 4 has, in the Z direction, a first area 4 a fixed to the main board 5 by the bonding material 6 and a second area 4 b that is not fixed to the main board 5. As a result, the first heat sink 4 can easily contact the base 37 to improve heat dissipation.

[其他實施形態] 以下，針對其他實施形態來說明。[Other embodiments] Hereinafter, other embodiments will be described.

〈1〉在上述實施形態，提及在第一貫通孔21內，僅在主板5之第一面5a側設有接合材6的構造。但是，如第一實施形態及第二實施形態那般，使第一散熱片4對於主板5的第二面5b於Z方向大幅突出的構造中，針對該突出的區域，第一散熱片4並沒有對主板5固定。因此，在該構造中，即使在第一貫通孔21內遍及Z方向全體來設有接合材6，也會在加熱後的冷卻工程中，對於第一散熱片4及主板5產生與參照圖8所說明的應力相同的應力。<1> In the above embodiment, the structure in which the bonding material 6 is provided only on the first surface 5a side of the main plate 5 in the first through hole 21 is mentioned. However, as in the first and second embodiments, in the structure in which the first heat sink 4 protrudes significantly in the Z direction from the second surface 5b of the main board 5, the first heat sink 4 is parallel to the protruding area. The motherboard 5 is not fixed. Therefore, in this structure, even if the bonding material 6 is provided throughout the Z direction in the first through hole 21, the first heat sink 4 and the main board 5 will be generated during the cooling process after heating. The stress described is the same stress.

也就是說，在該構造之下，與上述實施形態同樣地，主板5會往-Z側反曲成凸狀，故第一散熱片4容易對第二散熱片31面接觸，使散熱性提升。In other words, under this structure, similar to the above-mentioned embodiment, the main board 5 is curved toward the -Z side into a convex shape, so the first heat sink 4 is easily in surface contact with the second heat sink 31, which improves heat dissipation. .

〈2〉在上述實施形態，說明了第一貫通孔21是在主板5之面上，形成在Y方向之非對稱的位置。但是，本發明中，第一貫通孔21是在主板5之面上，形成在Y方向之對稱的位置亦可。亦即，第一部分51與第二部分52，是在Y方向具有相同寬度亦可。該情況時，兩個第二貫通孔22，是設在第一部分51與第二部分52之任一側皆可。<2> In the above embodiment, it is described that the first through hole 21 is formed on the surface of the main plate 5 at an asymmetrical position in the Y direction. However, in the present invention, the first through hole 21 is formed on the surface of the main plate 5 and may be formed at a symmetrical position in the Y direction. That is, the first portion 51 and the second portion 52 may have the same width in the Y direction. In this case, the two second through holes 22 may be provided on either side of the first portion 51 and the second portion 52.

〈3〉在上述實施形態，說明了兩個第二貫通孔22，是對於第一貫通孔21設在Y方向的外側。但是，如圖22所示般，兩個第二貫通孔22，是對於第一貫通孔21設在X方向的外側亦可。<3> In the above embodiment, the two second through-holes 22 were described, and the first through-holes 21 are provided outside in the Y direction. However, as shown in FIG. 22, the two second through-holes 22 may be provided on the outer side of the first through-hole 21 in the X direction.

〈4〉在上述實施形態，說明了半導體雷射元件2在第一散熱片4之面上的設置位置，是對於主板5之中於Y方向之寬度較廣的第一部分51比較接近的位置。但是，在本發明中，第一散熱片4之面上的半導體雷射元件2之設置位置，並不限定於上述內容。例如，在上述各實施形態中，半導體雷射元件2，是在第一散熱片4的面上之中，配置在：對於主板5之中於Y方向寬度較窄的第二部分52比較接近的位置亦可。<4> In the above embodiment, it is explained that the position of the semiconductor laser element 2 on the surface of the first heat sink 4 is relatively close to the first portion 51 of the main board 5 that has a wider width in the Y direction. However, in the present invention, the installation position of the semiconductor laser element 2 on the surface of the first heat sink 4 is not limited to the above. For example, in each of the above embodiments, the semiconductor laser element 2 is arranged on the surface of the first heat sink 4, which is relatively close to the second portion 52 of the main board 5, which has a narrow width in the Y direction. Location is also possible.

〈5〉第一實施形態及第二實施形態中，說明了半導體雷射光源裝置1，是在主板5的第二面5b側設置供電基板15，使第一散熱片4直接接觸第二散熱片31的構造。但是，在該等實施形態中，亦可如第三實施形態及第四實施形態所說明般，使半導體雷射光源裝置1具備用來設置供電基板15的基台37，使第一散熱片4透過基台37來對第二散熱片31接觸的構造。<5> In the first and second embodiments, the semiconductor laser light source device 1 is described. The power supply substrate 15 is provided on the second surface 5b side of the main board 5, so that the first heat sink 4 directly contacts the second heat sink 31's structure. However, in these embodiments, as described in the third and fourth embodiments, the semiconductor laser light source device 1 may be provided with a base 37 on which the power supply substrate 15 is installed, and the first heat sink 4 A structure in which the second heat sink 31 is in contact through the base 37.

〈6〉在上述實施形態，雖說明了設在主板5的第二貫通孔22有兩處，但在三處以上形成第二貫通孔22亦可。<6> In the above embodiment, although it is described that there are two second through holes 22 provided in the main board 5, the second through holes 22 may be formed at three or more places.

〈7〉在上述實施形態，雖說明了半導體雷射元件2是在X方向配置成一列的情況，但在X方向及Y方向配置成矩陣狀亦可。<7> In the above embodiment, although the case where the semiconductor laser elements 2 are arranged in a row in the X direction has been described, they may be arranged in a matrix in the X direction and the Y direction.

1:半導體雷射光源裝置 2:半導體雷射元件 3:輔助座 4:第一散熱片 4a:第一散熱片的第一區域 4b:第一散熱片的第二區域 5:主板 5a:主板的第一面 5b:主板的第二面 6:接合材 7:供電銷 10:罩蓋 10a:窗部 12:鏡子 13:絕緣構件 15:供電基板 16:銲料材 18:導線 21:第一貫通孔 22:第二貫通孔 31:第二散熱片 33:按壓構件 35:墊片 37:基台 37a:凹部 51:主板的第一部分 52:主板的第二部分 100:以往的半導體雷射光源裝置 101:主板 102:散熱片 103:輔助座 104:半導體雷射元件 105:供電銷 110:罩蓋 110a:窗部 L2:雷射光1: Semiconductor laser light source device 2: Semiconductor laser components 3: auxiliary seat 4: The first heat sink 4a: The first area of the first heat sink 4b: The second area of the first heat sink 5: Motherboard 5a: The first side of the motherboard 5b: The second side of the motherboard 6: Joining material 7: Power supply pin 10: Cover 10a: Window 12: Mirror 13: Insulating member 15: Power supply board 16: Solder material 18: Wire 21: The first through hole 22: The second through hole 31: second heat sink 33: pressing member 35: Gasket 37: Abutment 37a: recess 51: The first part of the motherboard 52: The second part of the motherboard 100: Conventional semiconductor laser light source device 101: Motherboard 102: heat sink 103: auxiliary seat 104: Semiconductor laser components 105: power supply pin 110: cover 110a: Window L2: Laser light

[圖1]，是將半導體雷射光源裝置之第一實施形態的構造予以示意表示的立體圖。 [圖2]，是從圖1省略罩蓋及鏡子之圖示的圖。 [圖3]，是表示主板之構造的示意俯視圖。 [圖4]，是將圖1所示的半導體雷射光源裝置從Z方向觀看時的示意俯視圖。 [圖5A]，是圖4內的A1-A1線剖面圖。 [圖5B]，是圖4內的A1-A1線剖面圖。 [圖6]，是將含有第二散熱片的半導體雷射光源裝置之第一實施形態的構造予以示意表示的剖面圖。 [圖7]，是將圖6所示的半導體雷射光源裝置從Z方向觀看時的示意圖。 [圖8]，是示意說明在接合工程時對第一散熱片及主板施加之應力的圖。 [圖9]，是示意表示將第一散熱片及主板對第二散熱片固定之方法之一例的圖。 [圖10]，是將從Z方向觀看圖1所示之半導體雷射光源裝置之其他實施例時的示意俯視圖，以圖4的方式來圖示的圖。 [圖11]，是將半導體雷射光源裝置之第二實施形態的構造予以示意表示的立體圖。 [圖12]，是從圖11省略罩蓋之圖示的圖。 [圖13]，是將圖11所示的半導體雷射光源裝置從Z方向觀看時的示意俯視圖。 [圖14]，圖13內的A1-A1線剖面圖。 [圖15]，是將半導體雷射光源裝置之第三實施形態的構造予以示意表示的立體圖。 [圖16]，是從圖15省略罩蓋之圖示的圖。 [圖17]，是圖15所示之半導體雷射光源裝置的示意剖面圖。 [圖18]，是將含有第二散熱片的半導體雷射光源裝置之第三實施形態的構造予以示意表示的剖面圖。 [圖19]，是將半導體雷射光源裝置之第四實施形態的構造予以示意表示的立體圖。 [圖20]，是從圖19省略罩蓋之圖示的圖。 [圖21]，是圖19所示之半導體雷射光源裝置的示意剖面圖。 [圖22]，是將其他實施形態的半導體雷射光源裝置所具備之主板的構造予以示意表示的俯視圖。 [圖23]，是將以往之CAN封裝型之半導體雷射光源裝置的構造予以示意表示的圖。[Fig. 1] is a perspective view schematically showing the structure of the first embodiment of the semiconductor laser light source device. [Fig. 2] is a diagram omitting the illustration of the cover and the mirror from Fig. 1. [Figure 3] is a schematic plan view showing the structure of the motherboard. [Fig. 4] is a schematic plan view of the semiconductor laser light source device shown in Fig. 1 when viewed from the Z direction. [FIG. 5A] is a cross-sectional view along the line A1-A1 in FIG. 4. [Fig. 5B] is a cross-sectional view along the line A1-A1 in Fig. 4. [Fig. 6] is a cross-sectional view schematically showing the structure of the first embodiment of the semiconductor laser light source device including the second heat sink. [Fig. 7] is a schematic view when the semiconductor laser light source device shown in Fig. 6 is viewed from the Z direction. [Fig. 8] is a diagram schematically illustrating the stress applied to the first heat sink and the main board during the bonding process. [Fig. 9] is a diagram schematically showing an example of a method of fixing the first heat sink and the main board to the second heat sink. [FIG. 10] is a schematic plan view when another embodiment of the semiconductor laser light source device shown in FIG. 1 is viewed from the Z direction, and is a diagram illustrated in the manner of FIG. 4. Fig. 11 is a perspective view schematically showing the structure of the second embodiment of the semiconductor laser light source device. [FIG. 12] is a diagram omitting the illustration of the cover from FIG. 11. [Fig. 13] is a schematic plan view of the semiconductor laser light source device shown in Fig. 11 when viewed from the Z direction. [Fig. 14], a cross-sectional view along the line A1-A1 in Fig. 13. Fig. 15 is a perspective view schematically showing the structure of the third embodiment of the semiconductor laser light source device. [FIG. 16] is a diagram omitting the illustration of the cover from FIG. 15. [FIG. 17] is a schematic cross-sectional view of the semiconductor laser light source device shown in FIG. 15. Fig. 18 is a cross-sectional view schematically showing the structure of the third embodiment of the semiconductor laser light source device including the second heat sink. Fig. 19 is a perspective view schematically showing the structure of the fourth embodiment of the semiconductor laser light source device. [FIG. 20] is a diagram omitting the illustration of the cover from FIG. 19. [FIG. 21] is a schematic cross-sectional view of the semiconductor laser light source device shown in FIG. 19. Fig. 22 is a plan view schematically showing the structure of a main board included in a semiconductor laser light source device according to another embodiment. [Fig. 23] is a diagram schematically showing the structure of a conventional CAN package type semiconductor laser light source device.

1:半導體雷射光源裝置 1: Semiconductor laser light source device

2:半導體雷射元件 2: Semiconductor laser components

3:輔助座 3: auxiliary seat

4:第一散熱片 4: The first heat sink

4a:第一散熱片的第一區域 4a: The first area of the first heat sink

4b:第一散熱片的第二區域 4b: The second area of the first heat sink

5:主板 5: Motherboard

5a:主板的第一面 5a: The first side of the motherboard

5b:主板的第二面 5b: The second side of the motherboard

6:接合材 6: Joining material

7:供電銷 7: Power supply pin

12:鏡子 12: Mirror

13:絕緣構件 13: Insulating member

Claims (7)

一種半導體雷射光源裝置，其特徵為，具有： 主板，其由第一金屬材料所構成，且含有第一面、對於前述第一面位在第一方向的第二面、形成在部分區域並從前述第一面到達前述第二面的第一貫通孔； 第一散熱片，其配置成至少一部分嵌合於前述第一貫通孔內，且由熱傳導率比前述第一金屬材料還高的第二金屬材料所構成； 輔助座，其在前述第一散熱片之露出於前述第一貫通孔之前述第一面側的區域內之面上，沿著與前述第一方向正交的第二方向來複數配置； 複數個半導體雷射元件，其配置在複數個前述輔助座之各自的面上；以及 接合材，其在前述第一貫通孔內，中介於前述主板的內壁與前述第一散熱片的外壁之間， 前述第一散熱片，具有：在前述第一面側的位置藉由前述接合材來固定於前述主板的第一區域、在前述第二面側的位置沒有對前述主板固定的第二區域。A semiconductor laser light source device is characterized in that it has: The main board is made of a first metal material and includes a first surface, a second surface in the first direction with respect to the first surface, and a first surface formed in a partial area and reaching the second surface from the first surface. Through hole The first heat sink is configured to fit at least a part of the first through hole and is made of a second metal material with a higher thermal conductivity than the first metal material; The auxiliary seat is arranged in plural along a second direction orthogonal to the first direction on the surface of the first heat sink exposed on the first surface side of the first through hole; A plurality of semiconductor laser elements are arranged on the respective surfaces of the plurality of auxiliary seats; and The bonding material is located in the first through hole and between the inner wall of the main board and the outer wall of the first heat sink, The first heat sink has: a first area fixed to the main board by the bonding material at a position on the first surface side, and a second area not fixed to the main board at a position on the second surface side. 如請求項1所述之半導體雷射光源裝置，其中，前述第一散熱片，在前述第一方向是比前述第二面還從前述第一貫通孔往外側突出。The semiconductor laser light source device according to claim 1, wherein the first heat sink protrudes outward from the first through hole in the first direction than the second surface. 如請求項1或2所述之半導體雷射光源裝置，其中，前述接合材，在前述第一貫通孔內，僅形成在前述第一面側的區域。The semiconductor laser light source device according to claim 1 or 2, wherein the bonding material is formed only in a region on the first surface side in the first through hole. 如請求項1或2所述之半導體雷射光源裝置，其中， 第二散熱片，其配置成與前述第一散熱片的前述第二區域接觸；以及 按壓構件，其用來固定前述第二散熱片與前述主板。The semiconductor laser light source device according to claim 1 or 2, wherein: A second heat sink configured to contact the second region of the first heat sink; and The pressing member is used to fix the second heat sink and the main board. 如請求項1或2所述之半導體雷射光源裝置，其中， 複數個前述輔助座，在前述第一散熱片的面之中，配置在不與前述第一面平行的面上， 複數個前述半導體雷射元件，在複數個前述輔助座之面上配置成各自往前述第一方向射出光。The semiconductor laser light source device according to claim 1 or 2, wherein: The plurality of auxiliary seats are arranged on a surface that is not parallel to the first surface among the surfaces of the first heat sink, The plurality of semiconductor laser elements are arranged on the surface of the plurality of auxiliary seats so as to emit light in the first direction. 如請求項1或2所述之半導體雷射光源裝置，其中， 具有配置在前述第一散熱片之面上的鏡子， 複數個前述輔助座，在前述第一散熱片的面之中，配置在與前述第一面平行的面上， 複數個前述半導體雷射元件，在複數個前述輔助座之面上配置成各自往與前述第一方向及前述第二方向之雙方正交的第三方向射出光， 前述鏡子，將從複數個前述半導體雷射元件朝向前述第三方向射出的光之進行方向，變換成前述第一方向。The semiconductor laser light source device according to claim 1 or 2, wherein: Having a mirror arranged on the surface of the aforementioned first heat sink, The plurality of auxiliary seats are arranged on a surface parallel to the first surface among the surfaces of the first heat sink, The plurality of semiconductor laser elements are arranged on the surface of the plurality of auxiliary seats so as to emit light in a third direction orthogonal to both the first direction and the second direction, respectively, The mirror transforms the direction of light emitted from the plurality of semiconductor laser elements toward the third direction into the first direction. 如請求項1或2所述之半導體雷射光源裝置，其中， 前述第一金屬材料，是由鐵、鐵合金所成群之中選擇之1種以上的材料， 前述第二金屬材料，是由銅、銅合金所成群之中選擇之1種以上的材料。The semiconductor laser light source device according to claim 1 or 2, wherein: The aforementioned first metal material is one or more materials selected from the group of iron and iron alloys, The aforementioned second metal material is one or more materials selected from a group of copper and copper alloys.
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JP6056146B2 (en) * 2012-01-26 2017-01-11 日亜化学工業株式会社 Semiconductor laser device

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