JPH07169553A - Surge absorber - Google Patents
Surge absorberInfo
- Publication number
- JPH07169553A JPH07169553A JP31464293A JP31464293A JPH07169553A JP H07169553 A JPH07169553 A JP H07169553A JP 31464293 A JP31464293 A JP 31464293A JP 31464293 A JP31464293 A JP 31464293A JP H07169553 A JPH07169553 A JP H07169553A
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- Prior art keywords
- sealing
- insulating film
- surge
- sealing electrodes
- electrodes
- Prior art date
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- Thermistors And Varistors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、通信ラインに侵入する
サージを吸収して、通信ライン端末に使用される電話
機、ファクシミリ等の電子機器を保護するサージアブソ
ーバに関する。更に詳しくは絶縁管内にハーメチックシ
ール（hermetic seal）したサージアブソーバに関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surge absorber that absorbs surges entering a communication line and protects electronic devices such as telephones and facsimiles used for communication line terminals. More specifically, it relates to a surge absorber having a hermetic seal in an insulating tube.
【０００２】[0002]
【従来の技術】従来、ハーメチックシールしたサージア
ブソーバとして、図３及び図４に示すようなマイクロギ
ャップ式のサージアブソーバ９ａ及び９ｂが知られてい
る。２つのサージアブソーバ９ａ及び９ｂに内蔵される
マイクロギャップ式サージ吸収素子１は、導電性皮膜１
ａで被包した円柱状のセラミック素体１ｂの中央に円周
方向に幅数１０μｍのマイクロギャップ１ｃを形成し、
このセラミック素体１ｂの両端に一対のキャップ電極１
ｄ，１ｅを冠着して作られる。図３に示すように、サー
ジアブソーバ９ａは、サージ吸収素子１を絶縁管４内に
収容してサージ吸収素子１の両端に一対の封止電極２，
３を配置し、これらの封止電極２，３をキャップ電極１
ｄ，１ｅに電気的に接続し同時に絶縁管４内部に不活性
ガスを封入して作られる。封止電極２，３にはそれぞれ
リード線６，７が接続される。2. Description of the Related Art Conventionally, as a hermetically sealed surge absorber, microgap type surge absorbers 9a and 9b as shown in FIGS. 3 and 4 are known. The microgap type surge absorbing element 1 built in the two surge absorbers 9a and 9b has a conductive film 1
A cylindrical ceramic body 1b encapsulated with a is provided with a microgap 1c having a width of several 10 μm in the circumferential direction at the center,
A pair of cap electrodes 1 is provided on both ends of the ceramic body 1b.
It is made by wearing d and 1e. As shown in FIG. 3, the surge absorber 9a accommodates the surge absorbing element 1 in the insulating tube 4 and has a pair of sealing electrodes 2 at both ends of the surge absorbing element 1.
3 are arranged, and these sealing electrodes 2 and 3 are connected to the cap electrode 1.
It is made by electrically connecting to d and 1e and at the same time enclosing an inert gas inside the insulating tube 4. Lead wires 6 and 7 are connected to the sealing electrodes 2 and 3, respectively.
【０００３】図４に示すように、サージアブソーバ９ｂ
は、マイクロギャップ式サージ吸収素子１をその両端の
キャップ電極１ｄ，１ｅに接続したリード線６，７とと
もにガラス管８で封止して作られる。ガラス管８には不
活性ガスが封入される。上記サージアブソーバ９ａ又は
９ｂでは雷サージ等に起因してリード線６，７に異常電
圧が印加すると、最初に円柱状のセラミック素体１ｂを
被包する導電性皮膜１ａに沿ってグロー放電が起こり、
最終的に一対のキャップ電極１ｄ，１ｅ間でのアーク放
電に移行してサージ電圧を吸収する。As shown in FIG. 4, a surge absorber 9b is provided.
Is manufactured by sealing the microgap type surge absorbing element 1 with the glass tubes 8 together with the lead wires 6 and 7 connected to the cap electrodes 1d and 1e at both ends thereof. The glass tube 8 is filled with an inert gas. In the surge absorber 9a or 9b, when an abnormal voltage is applied to the lead wires 6 and 7 due to a lightning surge or the like, glow discharge first occurs along the conductive film 1a enclosing the cylindrical ceramic body 1b. ,
Finally, the surge voltage is absorbed by shifting to arc discharge between the pair of cap electrodes 1d and 1e.
【０００４】[0004]
【発明が解決しようとする課題】しかし、上記従来のサ
ージアブソーバ９ａ及び９ｂは部品点数が多く、しかも
導電性皮膜１ａの形成工程、キャップ電極１ｄ，１ｅの
冠着工程、マイクロギャップ１ｃの形成工程、封止工程
等の多くの工程を要する不具合があった。特にマイクロ
ギャップの形成には大規模の設備や高度の技術を必要と
し、安定したマイクロギャップを得るためには多大の労
力を要していた。本発明の目的は、部品点数が少なくて
済み、製造が簡単で、しかもサージ電圧を吸収し得るサ
ージアブソーバを提供することにある。However, the above-mentioned conventional surge absorbers 9a and 9b have a large number of parts, and further, the step of forming the conductive film 1a, the step of attaching the cap electrodes 1d and 1e, and the step of forming the microgap 1c. However, there is a problem that requires many steps such as a sealing step. In particular, formation of a microgap requires a large-scale facility and high technology, and a great deal of labor is required to obtain a stable microgap. An object of the present invention is to provide a surge absorber that can be manufactured with a small number of parts, is simple, and can absorb a surge voltage.
【０００５】[0005]
【課題を解決するための手段】図１に示すように、本発
明のサージアブソーバ１０は絶縁管１４と、この絶縁管
１４内に収容され、絶縁膜１５で覆われたシリコン素体
１１と、絶縁管１４の両端に封着可能に構成され、封着
した状態で不活性ガスを封入して絶縁膜１５を介してシ
リコン素体１１に密着した一対の封止電極１２，１３と
を備えたものである。As shown in FIG. 1, a surge absorber 10 of the present invention includes an insulating tube 14, a silicon body 11 housed in the insulating tube 14 and covered with an insulating film 15. The insulating tube 14 is provided with a pair of sealing electrodes 12 and 13 which are configured to be sealable at both ends and sealed with an inert gas and adhered to the silicon body 11 through the insulating film 15. It is a thing.
【０００６】以下、本発明を詳述する。本発明の絶縁膜
は酸化珪素膜又は窒化珪素膜であることが好ましく、特
に膜の生成が容易で電気的に高い絶縁性が得られる酸化
珪素膜が好ましい。この絶縁膜の厚さは放電開始電圧に
応じて、またサージアブソーバの寿命の観点から好まし
くは０．５〜１０μｍの範囲から選ばれる。更に、サー
ジアブソーバの一対の封止電極の間隔、即ちシリコン素
体の長さは放電開始電圧に応じて好ましくは１００〜１
０００μｍの範囲から選ばれる。The present invention will be described in detail below. The insulating film of the present invention is preferably a silicon oxide film or a silicon nitride film, and particularly preferably a silicon oxide film that can be easily formed and has high electrical insulation. The thickness of this insulating film is preferably selected from the range of 0.5 to 10 μm depending on the discharge starting voltage and from the viewpoint of the life of the surge absorber. Further, the distance between the pair of sealing electrodes of the surge absorber, that is, the length of the silicon body is preferably 100 to 1 depending on the discharge starting voltage.
It is selected from the range of 000 μm.
【０００７】シリコン素体は全面を絶縁膜で覆われる。
このシリコン素体は両端面が平面であれば直方体に限ら
ず、円柱体でもよい。The entire surface of the silicon body is covered with an insulating film.
The silicon body is not limited to a rectangular parallelepiped, and may be a cylinder if the both end surfaces are flat.
【０００８】本発明の絶縁管はガラス管、セラミック管
等である。ガラス管はホウケイ酸ガラスのような硬質ガ
ラス、又は鉛ガラス、ソーダ石灰ガラスのような軟質ガ
ラスから作られる。セラミック管はＰＬＺＴ、透明アル
ミナのような可視光線を透過するセラミック焼結体から
作られたもののみならず、他の絶縁性のあるセラミック
管であればよい。The insulating tube of the present invention is a glass tube, a ceramic tube or the like. The glass tube is made of hard glass such as borosilicate glass, or soft glass such as lead glass, soda lime glass. The ceramic tube is not limited to one made of a ceramic sintered body that transmits visible light, such as PLZT or transparent alumina, but may be another ceramic tube having an insulating property.
【０００９】本発明の封止電極は封着時の絶縁管の熱収
縮によるクラックの発生を防止するために絶縁管と熱膨
張係数のほぼ等しい金属を用いる。従って封止電極は絶
縁管の種類より材質を選定する。絶縁管が軟質ガラス管
である場合には、封止電極にジュメット線（Dumet wir
e）、鉄５２ｗｔ％−ニッケル４２ｗｔ％−クロム６ｗ
ｔ％合金等が用いられ、絶縁管が硬質ガラス管である場
合には、鉄５８ｗｔ％−ニッケル４２ｗｔ％合金（以
下、４２合金という）等が用いられる。絶縁管がセラミ
ック管である場合には、封止電極に４２合金と銅のクラ
ッド材、コバール（Kovar）等が用いられる。ジュメッ
ト線は輪切りにして封止電極にする。４２合金と銅のク
ラッド材は４２合金の板材の片面又は両面に銅薄膜を密
着させ、高温で機械的に圧延するクラッド法（claddin
g）により作られる。クラッド材の銅薄膜を酸化させて
銅表面を亜酸化銅にすると封着時にガラスとのなじみが
良くなり好ましい。このクラッド材を円板に打抜いた
後、絞り加工して封止電極にする。The sealing electrode of the present invention uses a metal whose coefficient of thermal expansion is almost the same as that of the insulating tube in order to prevent cracking due to thermal contraction of the insulating tube during sealing. Therefore, the material of the sealing electrode is selected according to the type of insulating tube. If the insulating tube is a soft glass tube, use Dumet wire for the sealing electrode.
e), iron 52 wt% -nickel 42 wt% -chromium 6w
When a t% alloy or the like is used and the insulating tube is a hard glass tube, an iron 58 wt% -nickel 42 wt% alloy (hereinafter referred to as 42 alloy) or the like is used. When the insulating tube is a ceramic tube, a clad material of 42 alloy and copper, Kovar, or the like is used for the sealing electrode. The dumet wire is cut into rings to form a sealed electrode. The clad material of 42 alloy and copper is a clad method (claddin) in which a copper thin film is adhered to one or both sides of a plate material of 42 alloy and mechanically rolled at high temperature.
made by g). It is preferable to oxidize the copper thin film of the clad material to form cuprous oxide on the copper surface, because the compatibility with glass becomes good at the time of sealing. After punching this clad material into a disk, it is drawn into a sealed electrode.
【００１０】封止電極を封着するときには 絶縁管の内
部にはアルゴンガス、ネオンガス、窒素ガス等の不活性
ガスが充填される。本発明のサージアブソーバの放電開
始電圧は、前述した絶縁膜の厚さ、封止電極間の間隔以
外に、不活性ガスの封止圧力により制御される。When the sealing electrode is sealed, the inside of the insulating tube is filled with an inert gas such as argon gas, neon gas or nitrogen gas. The discharge start voltage of the surge absorber of the present invention is controlled by the sealing pressure of the inert gas, in addition to the thickness of the insulating film and the gap between the sealing electrodes described above.
【００１１】[0011]
【作用】通常はシリコン素体１１の絶縁膜１５が高絶縁
抵抗の皮膜として作用し、一対の封止電極１２，１３間
の電気的絶縁が保たれる。サージである瞬間的な異常電
圧が一対の封止電極１２，１３に印加されると、放電現
象が絶縁膜１５を挟んで封止電極１２又は１３とシリコ
ン素体１１の間で発生し、異常電圧は瞬時に吸収され
る。異常電圧が止むと、放電は停止し、一対の封止電極
１２，１３間の電気的絶縁は復元される。In general, the insulating film 15 of the silicon body 11 acts as a film having a high insulation resistance, and the electrical insulation between the pair of sealing electrodes 12 and 13 is maintained. When a momentary abnormal voltage, which is a surge, is applied to the pair of sealing electrodes 12 and 13, a discharge phenomenon occurs between the sealing electrode 12 or 13 and the silicon element body 11 with the insulating film 15 sandwiched between them, resulting in abnormalities. The voltage is absorbed instantly. When the abnormal voltage stops, the discharge stops and the electrical insulation between the pair of sealing electrodes 12 and 13 is restored.
【００１２】[0012]
【実施例】次に、本発明の実施例を比較例とともに図面
に基づいて詳しく説明する。 ＜実施例＞図１及び図２に示すように、直方体のシリコ
ン素体１１が一対の封止電極１２，１３に挟まれてガラ
ス管１４内に収容される。この例ではシリコン素体１１
は一辺が約５００μｍの立方体であって、シリコン素体
全体が厚さ約１μｍのＳｉＯ2からなる絶縁膜１５で覆
われる。このＳｉＯ2膜はシリコン素体を大気中で高温
で加熱することにより形成される。Embodiments of the present invention will now be described in detail with reference to the drawings together with comparative examples. <Example> As shown in FIGS. 1 and 2, a rectangular parallelepiped silicon body 11 is sandwiched between a pair of sealing electrodes 12 and 13 and housed in a glass tube 14. In this example, the silicon body 11
Is a cube whose one side is about 500 μm, and the entire silicon body is covered with an insulating film 15 made of SiO 2 and having a thickness of about 1 μm. This SiO 2 film is formed by heating a silicon body at high temperature in the atmosphere.
【００１３】絶縁膜１５で覆われたシリコン素体１１は
一対の封止電極１２，１３で挟持される。一対の封止電
極１２，１３の各外面にはリード線１６，１７がそれぞ
れ溶着される。シリコン素体１１を挟持した状態で鉛ガ
ラスからなる内径１．８ｍｍ、厚さ０．７ｍｍ、長さ４
ｍｍのガラス管１４内に挿入する。封止電極１２，１３
はそれぞれ直径約１．７ｍｍのジュメット線を長さ約
１．５ｍｍに輪切りしたものである。この状態でガラス
管内の空気をアルゴンガスで置換して８００Ｔｏｒｒの
圧力にした後、６５０℃に加熱することにより封止電極
１２，１３によりガラス管１４が封止される。The silicon body 11 covered with the insulating film 15 is sandwiched by a pair of sealing electrodes 12 and 13. Lead wires 16 and 17 are welded to the outer surfaces of the pair of sealing electrodes 12 and 13, respectively. Internal diameter 1.8 mm, thickness 0.7 mm, length 4 made of lead glass with the silicon body 11 being sandwiched
It is inserted into the mm glass tube 14. Sealing electrodes 12, 13
Is a Jumet wire with a diameter of about 1.7 mm, which is cut into a length of about 1.5 mm. In this state, the air inside the glass tube is replaced with argon gas to a pressure of 800 Torr, and the glass tube 14 is sealed by the sealing electrodes 12 and 13 by heating to 650 ° C.
【００１４】＜比較例＞図３に示される前述したサージ
アブソーバ９ａを比較例とした。このサージアブソーバ
９ａのガラス管４にはサージ吸収素子１がアルゴンガス
とともに封止される。封止電極２，３は実施例と同じジ
ュメット線を用いた。サージ吸収素子１はムライトから
なる長さ５．５ｍｍで直径１．７ｍｍの円柱状のセラミ
ック素体１ｂの全面にスパッタリングにより導電性皮膜
１ａを形成した後、このセラミック素体１ｂの両端にそ
れぞれ厚さ０．２ｍｍ、外径２．１ｍｍ、長さ１．５ｍ
ｍの一対のキャップ電極１ｄ，１ｅを圧入して冠着し、
更にセラミック素体１ｂの周面中央に数１０μｍ幅のマ
イクロギャップ１ｃをレーザにより形成することにより
作られる。<Comparative Example> The aforementioned surge absorber 9a shown in FIG. 3 was used as a comparative example. The surge absorber 1 is sealed in the glass tube 4 of the surge absorber 9a together with argon gas. As the sealing electrodes 2 and 3, the same Dumet wire as in the example was used. The surge absorbing element 1 is made of mullite and has a length of 5.5 mm and a diameter of 1.7 mm, and a conductive film 1a is formed on the entire surface of a cylindrical ceramic body 1b by sputtering. 0.2 mm, outer diameter 2.1 mm, length 1.5 m
m pair of cap electrodes 1d and 1e are press-fitted and capped,
Further, it is produced by forming a microgap 1c having a width of several tens of μm in the center of the peripheral surface of the ceramic body 1b by laser.
【００１５】実施例及び比較例のサージアブソーバの直
流放電開始電圧、絶縁抵抗、静電容量、静電気応答電
圧、静電気寿命特性等の電気的特性を調べた。その結果
を表１に示す。なお、静電気応答電圧及び静電気寿命特
性測定に使用した静電気印加条件は１５００ｐＦ−０Ω
−１０ｋＶである。The electrical characteristics of the surge absorbers of Examples and Comparative Examples such as DC discharge starting voltage, insulation resistance, electrostatic capacitance, electrostatic response voltage, and electrostatic life characteristic were examined. The results are shown in Table 1. In addition, the static electricity applied condition used for the static electricity response voltage and the static electricity life characteristic measurement is 1500 pF-0 Ω.
It is -10 kV.
【００１６】[0016]
【表１】 [Table 1]
【００１７】表１から明かなように、実施例及び比較例
のサージアブソーバとも同じ電気的特性を示した。As is clear from Table 1, the surge absorbers of Examples and Comparative Examples also showed the same electrical characteristics.
【００１８】[0018]
【発明の効果】以上述べたように、本発明によれば、絶
縁膜で覆ったシリコン素体を絶縁膜を介して一対の封止
電極で挟持して絶縁管に不活性ガスとともに封止するこ
とにより、従来のマイクロギャップ式のサージ吸収素子
と比べて、部品点数が少なくて済み、マイクロギャップ
を形成する工程が不要になるため、製造が簡単になる。
本発明のサージアブソーバは通常シリコン素体を覆う絶
縁膜が高絶縁抵抗膜として作用し、一対の封止電極間の
電気的絶縁を保つ。一方サージである瞬間的な異常電圧
が封止電極間に印加されると、放電現象が絶縁膜を挟ん
で封止電極とシリコン素体の間で発生し、異常電圧は瞬
時に吸収される。異常電圧が止むと、放電は停止し、封
止電極間の電気的絶縁は復元され、マイクロギャップ式
サージアブソーバと同等にサージを吸収することができ
る。As described above, according to the present invention, a silicon element body covered with an insulating film is sandwiched by a pair of sealing electrodes via the insulating film and sealed in an insulating tube together with an inert gas. As a result, the number of parts is smaller than that of the conventional microgap type surge absorbing element, and the step of forming the microgap is not required, which simplifies manufacturing.
In the surge absorber of the present invention, the insulating film that normally covers the silicon element acts as a high insulation resistance film, and maintains electrical insulation between the pair of sealing electrodes. On the other hand, when a momentary abnormal voltage, which is a surge, is applied between the sealing electrodes, a discharge phenomenon occurs between the sealing electrode and the silicon element body with the insulating film interposed therebetween, and the abnormal voltage is instantaneously absorbed. When the abnormal voltage stops, the discharge stops, the electrical insulation between the sealing electrodes is restored, and the surge can be absorbed in the same manner as the microgap type surge absorber.
【図１】本発明実施例のサージアブソーバの中央断面
図。FIG. 1 is a central sectional view of a surge absorber according to an embodiment of the present invention.
【図２】その分解した状態を示す斜視図。FIG. 2 is a perspective view showing the disassembled state.
【図３】従来例サージアブソーバの中央断面図。FIG. 3 is a central cross-sectional view of a conventional surge absorber.
【図４】別の従来例サージアブソーバの断面図。FIG. 4 is a cross-sectional view of another conventional surge absorber.
１０ サージアブソーバ １１ シリコン素体 １２，１３ 封止電極 １４ ガラス管（絶縁管） １５ 絶縁膜 10 Surge Absorber 11 Silicon Element 12, 13 Sealing Electrode 14 Glass Tube (Insulating Tube) 15 Insulating Film
───────────────────────────────────────────────────── フロントページの続き (72)発明者 池田 富士男 埼玉県秩父郡横瀬町大字横瀬2270番地 三 菱マテリアル株式会社セラミックス研究所 内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Fujio Ikeda 2270 Yokose, Yokose-cho, Chichibu-gun, Saitama Sanryo Materials Co., Ltd. Ceramics Laboratory
Claims (4)
リコン素体(11)と、 前記絶縁管(14)の両端に封着可能に構成され、封着した
状態で不活性ガスを封入して前記絶縁膜(15)を介してシ
リコン素体(11)に密着した一対の封止電極(12,13)とを
備えたサージアブソーバ。1. An insulating pipe (14), a silicon body (11) housed in the insulating pipe (14) and covered with an insulating film (15), and a sealing member at both ends of the insulating pipe (14). And a pair of sealing electrodes (12, 13) which are configured to be attachable and which are sealed and filled with an inert gas and adhered to the silicon body (11) through the insulating film (15). surge absorber.
である請求項１記載のサージアブソーバ。2. The surge absorber according to claim 1, wherein the insulating film (15) is a silicon oxide film or a silicon nitride film.
ある請求項１記載のサージアブソーバ。3. The surge absorber according to claim 1, wherein the insulating film (15) has a thickness of 0.5 to 10 μm.
〜１０００μｍである請求項１記載のサージアブソー
バ。4. The gap between the pair of sealing electrodes (12, 13) is 100.
The surge absorber according to claim 1, which has a thickness of about 1000 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05314642A JP3134912B2 (en) | 1993-12-15 | 1993-12-15 | surge absorber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05314642A JP3134912B2 (en) | 1993-12-15 | 1993-12-15 | surge absorber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07169553A true JPH07169553A (en) | 1995-07-04 |
| JP3134912B2 JP3134912B2 (en) | 2001-02-13 |
Family
ID=18055788
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP05314642A Expired - Fee Related JP3134912B2 (en) | 1993-12-15 | 1993-12-15 | surge absorber |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3134912B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013069561A (en) * | 2011-09-22 | 2013-04-18 | Tdk Corp | Electrostatic protective element |
-
1993
- 1993-12-15 JP JP05314642A patent/JP3134912B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013069561A (en) * | 2011-09-22 | 2013-04-18 | Tdk Corp | Electrostatic protective element |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3134912B2 (en) | 2001-02-13 |
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