JP3134912B2 - surge absorber - Google Patents
surge absorberInfo
- Publication number
- JP3134912B2 JP3134912B2 JP05314642A JP31464293A JP3134912B2 JP 3134912 B2 JP3134912 B2 JP 3134912B2 JP 05314642 A JP05314642 A JP 05314642A JP 31464293 A JP31464293 A JP 31464293A JP 3134912 B2 JP3134912 B2 JP 3134912B2
- Authority
- JP
- Japan
- Prior art keywords
- surge absorber
- surge
- sealing
- insulating film
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【０００１】[0001]
【産業上の利用分野】本発明は、通信ラインに侵入する
サージを吸収して、通信ライン端末に使用される電話
機、ファクシミリ等の電子機器を保護するサージアブソ
ーバに関する。更に詳しくは絶縁管内にハーメチックシ
ール（hermetic seal）したサージアブソーバに関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surge absorber that protects electronic equipment such as telephones and facsimile devices used in communication line terminals by absorbing surges entering a communication line. More particularly, the present invention relates to a surge absorber having a hermetic seal in an insulating tube.
【０００２】[0002]
【従来の技術】従来、ハーメチックシールしたサージア
ブソーバとして、図３及び図４に示すようなマイクロギ
ャップ式のサージアブソーバ９ａ及び９ｂが知られてい
る。２つのサージアブソーバ９ａ及び９ｂに内蔵される
マイクロギャップ式サージ吸収素子１は、導電性皮膜１
ａで被包した円柱状のセラミック素体１ｂの中央に円周
方向に幅数１０μｍのマイクロギャップ１ｃを形成し、
このセラミック素体１ｂの両端に一対のキャップ電極１
ｄ，１ｅを冠着して作られる。図３に示すように、サー
ジアブソーバ９ａは、サージ吸収素子１を絶縁管４内に
収容してサージ吸収素子１の両端に一対の封止電極２，
３を配置し、これらの封止電極２，３をキャップ電極１
ｄ，１ｅに電気的に接続し同時に絶縁管４内部に不活性
ガスを封入して作られる。封止電極２，３にはそれぞれ
リード線６，７が接続される。2. Description of the Related Art Conventionally, microgap surge absorbers 9a and 9b as shown in FIGS. 3 and 4 have been known as hermetic sealed surge absorbers. The micro-gap surge absorbing element 1 built in the two surge absorbers 9a and 9b has a conductive film 1
a micro gap 1c having a width of several tens μm is formed in the circumferential direction at the center of the cylindrical ceramic body 1b wrapped with a;
A pair of cap electrodes 1 are provided at both ends of the ceramic body 1b.
It is made by wearing d and 1e. As shown in FIG. 3, the surge absorber 9a includes a surge absorbing element 1 housed in an insulating tube 4 and a pair of sealing electrodes 2 at both ends of the surge absorbing element 1.
3 and these sealing electrodes 2 and 3 are
It is made by electrically connecting to d and 1e and at the same time filling an inert gas inside the insulating tube 4. Lead wires 6 and 7 are connected to the sealing electrodes 2 and 3, respectively.
【０００３】図４に示すように、サージアブソーバ９ｂ
は、マイクロギャップ式サージ吸収素子１をその両端の
キャップ電極１ｄ，１ｅに接続したリード線６，７とと
もにガラス管８で封止して作られる。ガラス管８には不
活性ガスが封入される。上記サージアブソーバ９ａ又は
９ｂでは雷サージ等に起因してリード線６，７に異常電
圧が印加すると、最初に円柱状のセラミック素体１ｂを
被包する導電性皮膜１ａに沿ってグロー放電が起こり、
最終的に一対のキャップ電極１ｄ，１ｅ間でのアーク放
電に移行してサージ電圧を吸収する。As shown in FIG. 4, a surge absorber 9b
Is formed by sealing a microgap type surge absorbing element 1 with a glass tube 8 together with lead wires 6 and 7 connected to cap electrodes 1d and 1e at both ends thereof. An inert gas is sealed in the glass tube 8. In the above-described surge absorber 9a or 9b, when an abnormal voltage is applied to the lead wires 6 and 7 due to a lightning surge or the like, a glow discharge occurs first along the conductive film 1a that covers the cylindrical ceramic body 1b. ,
Eventually, arc discharge occurs between the pair of cap electrodes 1d and 1e to absorb the surge voltage.
【０００４】[0004]
【発明が解決しようとする課題】しかし、上記従来のサ
ージアブソーバ９ａ及び９ｂは部品点数が多く、しかも
導電性皮膜１ａの形成工程、キャップ電極１ｄ，１ｅの
冠着工程、マイクロギャップ１ｃの形成工程、封止工程
等の多くの工程を要する不具合があった。特にマイクロ
ギャップの形成には大規模の設備や高度の技術を必要と
し、安定したマイクロギャップを得るためには多大の労
力を要していた。本発明の目的は、部品点数が少なくて
済み、製造が簡単で、しかもサージ電圧を吸収し得るサ
ージアブソーバを提供することにある。However, the above-mentioned conventional surge absorbers 9a and 9b have a large number of parts, and furthermore, a process for forming the conductive film 1a, a process for capping the cap electrodes 1d and 1e, and a process for forming the micro gap 1c. And a problem that requires many steps such as a sealing step. In particular, formation of a microgap requires large-scale equipment and advanced technology, and a great deal of effort is required to obtain a stable microgap. An object of the present invention is to provide a surge absorber that requires a small number of parts, is easy to manufacture, and can absorb a surge voltage.
【０００５】[0005]
【課題を解決するための手段】図１に示すように、本発
明のサージアブソーバ１０は、素体全面が絶縁膜１５で
覆われたシリコン素体１１が絶縁管１４内に収容され、
一対の封止電極１２，１３がシリコン素体１１の両端面
にこれらの両端面を覆った絶縁膜１５を介してシリコン
素体１１に密着しかつ絶縁管１４の両端に不活性ガスを
封入して封着したことを特徴とする。 As shown in FIG. 1, a surge absorber 10 of the present invention has an insulating film 15 on the entire surface of a body.
The covered silicon body 11 is accommodated in the insulating tube 14,
The pair of sealing electrodes 12 and 13 are both end faces of the silicon body 11
Through an insulating film 15 covering both end surfaces thereof.
Inert gas is applied to both ends of the insulating tube 14 in close contact with the body 11.
It is characterized by being sealed and sealed.
【０００６】以下、本発明を詳述する。本発明の絶縁膜
は酸化珪素膜又は窒化珪素膜であることが好ましく、特
に膜の生成が容易で電気的に高い絶縁性が得られる酸化
珪素膜が好ましい。この絶縁膜の厚さは放電開始電圧に
応じて、またサージアブソーバの寿命の観点から好まし
くは０．５〜１０μｍの範囲から選ばれる。更に、サー
ジアブソーバの一対の封止電極の間隔、即ちシリコン素
体の長さは放電開始電圧に応じて好ましくは１００〜１
０００μｍの範囲から選ばれる。Hereinafter, the present invention will be described in detail. The insulating film of the present invention is preferably a silicon oxide film or a silicon nitride film, and particularly preferably a silicon oxide film from which a film can be easily formed and an electrically high insulating property can be obtained. The thickness of the insulating film is preferably selected from the range of 0.5 to 10 μm according to the discharge starting voltage and from the viewpoint of the life of the surge absorber. Further, the distance between the pair of sealing electrodes of the surge absorber, that is, the length of the silicon body is preferably 100 to 1 depending on the firing voltage.
000 μm.
【０００７】シリコン素体は全面を絶縁膜で覆われる。
このシリコン素体は両端面が平面であれば直方体に限ら
ず、円柱体でもよい。The entire surface of the silicon body is covered with an insulating film.
The silicon body is not limited to a rectangular parallelepiped as long as both end faces are flat, and may be a cylindrical body.
【０００８】本発明の絶縁管はガラス管、セラミック管
等である。ガラス管はホウケイ酸ガラスのような硬質ガ
ラス、又は鉛ガラス、ソーダ石灰ガラスのような軟質ガ
ラスから作られる。セラミック管はＰＬＺＴ、透明アル
ミナのような可視光線を透過するセラミック焼結体から
作られたもののみならず、他の絶縁性のあるセラミック
管であればよい。The insulating tube of the present invention is a glass tube, a ceramic tube or the like. The glass tube is made of hard glass, such as borosilicate glass, or soft glass, such as lead glass, soda-lime glass. The ceramic tube is not limited to one made of a ceramic sintered body that transmits visible light such as PLZT or transparent alumina, but may be any other insulating ceramic tube.
【０００９】本発明の封止電極は封着時の絶縁管の熱収
縮によるクラックの発生を防止するために絶縁管と熱膨
張係数のほぼ等しい金属を用いる。従って封止電極は絶
縁管の種類より材質を選定する。絶縁管が軟質ガラス管
である場合には、封止電極にジュメット線（Dumet wir
e）、鉄５２ｗｔ％−ニッケル４２ｗｔ％−クロム６ｗ
ｔ％合金等が用いられ、絶縁管が硬質ガラス管である場
合には、鉄５８ｗｔ％−ニッケル４２ｗｔ％合金（以
下、４２合金という）等が用いられる。絶縁管がセラミ
ック管である場合には、封止電極に４２合金と銅のクラ
ッド材、コバール（Kovar）等が用いられる。ジュメッ
ト線は輪切りにして封止電極にする。４２合金と銅のク
ラッド材は４２合金の板材の片面又は両面に銅薄膜を密
着させ、高温で機械的に圧延するクラッド法（claddin
g）により作られる。クラッド材の銅薄膜を酸化させて
銅表面を亜酸化銅にすると封着時にガラスとのなじみが
良くなり好ましい。このクラッド材を円板に打抜いた
後、絞り加工して封止電極にする。The sealing electrode of the present invention uses a metal having substantially the same thermal expansion coefficient as the insulating tube in order to prevent the occurrence of cracks due to thermal contraction of the insulating tube during sealing. Therefore, the material of the sealing electrode is selected according to the type of the insulating tube. If the insulating tube is a soft glass tube, a Dumet wire (Dumet wir
e), iron 52wt% -nickel 42wt% -chromium 6w
A t% alloy or the like is used, and when the insulating tube is a hard glass tube, an iron 58 wt% -nickel 42 wt% alloy (hereinafter, referred to as a 42 alloy) is used. When the insulating tube is a ceramic tube, a cladding material of 42 alloy and copper, Kovar, or the like is used for the sealing electrode. The dumet wire is sliced into a sealed electrode. The 42 alloy and copper clad material is a cladding method in which a copper thin film is adhered to one or both surfaces of a 42 alloy plate and mechanically rolled at a high temperature.
g). It is preferable to oxidize the copper thin film of the clad material to convert the copper surface to cuprous oxide, because the affinity with glass at the time of sealing is improved. After punching this clad material into a disk, it is drawn to form a sealing electrode.
【００１０】封止電極を封着するときには 絶縁管の内
部にはアルゴンガス、ネオンガス、窒素ガス等の不活性
ガスが充填される。本発明のサージアブソーバの放電開
始電圧は、前述した絶縁膜の厚さ、封止電極間の間隔以
外に、不活性ガスの封止圧力により制御される。When sealing the sealing electrode, the inside of the insulating tube is filled with an inert gas such as an argon gas, a neon gas or a nitrogen gas. The discharge starting voltage of the surge absorber of the present invention is controlled by the sealing pressure of the inert gas, in addition to the above-mentioned thickness of the insulating film and the interval between the sealing electrodes.
【００１１】[0011]
【作用】通常はシリコン素体１１の絶縁膜１５が高絶縁
抵抗の皮膜として作用し、一対の封止電極１２，１３間
の電気的絶縁が保たれる。サージである瞬間的な異常電
圧が一対の封止電極１２，１３に印加されると、放電現
象が絶縁膜１５を挟んで封止電極１２又は１３とシリコ
ン素体１１の間で発生し、異常電圧は瞬時に吸収され
る。異常電圧が止むと、放電は停止し、一対の封止電極
１２，１３間の電気的絶縁は復元される。Normally, the insulating film 15 of the silicon body 11 functions as a film having a high insulation resistance, and the electrical insulation between the pair of sealing electrodes 12 and 13 is maintained. When an instantaneous abnormal voltage as a surge is applied to the pair of sealing electrodes 12 and 13, a discharge phenomenon occurs between the sealing electrode 12 or 13 and the silicon body 11 with the insulating film 15 interposed therebetween. The voltage is absorbed instantly. When the abnormal voltage stops, the discharge stops and the electrical insulation between the pair of sealing electrodes 12 and 13 is restored.
【００１２】[0012]
【実施例】次に、本発明の実施例を比較例とともに図面
に基づいて詳しく説明する。 ＜実施例＞図１及び図２に示すように、直方体のシリコ
ン素体１１が一対の封止電極１２，１３に挟まれてガラ
ス管１４内に収容される。この例ではシリコン素体１１
は一辺が約５００μｍの立方体であって、シリコン素体
全体が厚さ約１μｍのＳｉＯ2からなる絶縁膜１５で覆
われる。このＳｉＯ2膜はシリコン素体を大気中で高温
で加熱することにより形成される。Next, embodiments of the present invention will be described in detail with reference to the drawings together with comparative examples. <Embodiment> As shown in FIGS. 1 and 2, a rectangular silicon body 11 is housed in a glass tube 14 sandwiched between a pair of sealing electrodes 12 and 13. In this example, the silicon body 11
Is a cube having a side of about 500 μm, and the entire silicon body is covered with an insulating film 15 made of SiO 2 having a thickness of about 1 μm. This SiO 2 film is formed by heating a silicon body at a high temperature in the air.
【００１３】絶縁膜１５で覆われたシリコン素体１１は
一対の封止電極１２，１３で挟持される。一対の封止電
極１２，１３の各外面にはリード線１６，１７がそれぞ
れ溶着される。シリコン素体１１を挟持した状態で鉛ガ
ラスからなる内径１．８ｍｍ、厚さ０．７ｍｍ、長さ４
ｍｍのガラス管１４内に挿入する。封止電極１２，１３
はそれぞれ直径約１．７ｍｍのジュメット線を長さ約
１．５ｍｍに輪切りしたものである。この状態でガラス
管内の空気をアルゴンガスで置換して８００Ｔｏｒｒの
圧力にした後、６５０℃に加熱することにより封止電極
１２，１３によりガラス管１４が封止される。The silicon body 11 covered with the insulating film 15 is sandwiched between a pair of sealing electrodes 12 and 13. Lead wires 16 and 17 are welded to the outer surfaces of the pair of sealing electrodes 12 and 13, respectively. 1.8 mm in inner diameter, 0.7 mm in thickness and 4 in length made of lead glass with the silicon body 11 held therebetween
mm glass tube 14. Sealing electrodes 12, 13
Is a circle obtained by cutting a dumet wire having a diameter of about 1.7 mm into a length of about 1.5 mm. In this state, the air in the glass tube is replaced with argon gas to obtain a pressure of 800 Torr, and then heated to 650 ° C., whereby the glass tube 14 is sealed by the sealing electrodes 12 and 13.
【００１４】＜比較例＞図３に示される前述したサージ
アブソーバ９ａを比較例とした。このサージアブソーバ
９ａのガラス管４にはサージ吸収素子１がアルゴンガス
とともに封止される。封止電極２，３は実施例と同じジ
ュメット線を用いた。サージ吸収素子１はムライトから
なる長さ５．５ｍｍで直径１．７ｍｍの円柱状のセラミ
ック素体１ｂの全面にスパッタリングにより導電性皮膜
１ａを形成した後、このセラミック素体１ｂの両端にそ
れぞれ厚さ０．２ｍｍ、外径２．１ｍｍ、長さ１．５ｍ
ｍの一対のキャップ電極１ｄ，１ｅを圧入して冠着し、
更にセラミック素体１ｂの周面中央に数１０μｍ幅のマ
イクロギャップ１ｃをレーザにより形成することにより
作られる。<Comparative Example> The above-described surge absorber 9a shown in FIG. 3 was used as a comparative example. The surge absorbing element 1 is sealed in the glass tube 4 of the surge absorber 9a together with argon gas. The sealing electrodes 2 and 3 used the same dumet wire as in the example. The surge absorbing element 1 is formed by forming a conductive film 1a on the entire surface of a cylindrical ceramic body 1b made of mullite and having a length of 5.5 mm and a diameter of 1.7 mm by sputtering. 0.2mm, outer diameter 2.1mm, length 1.5m
m and a pair of cap electrodes 1d and 1e are press-fitted and crowned,
Further, a microgap 1c having a width of several tens of μm is formed at the center of the peripheral surface of the ceramic body 1b by laser.
【００１５】実施例及び比較例のサージアブソーバの直
流放電開始電圧、絶縁抵抗、静電容量、静電気応答電
圧、静電気寿命特性等の電気的特性を調べた。その結果
を表１に示す。なお、静電気応答電圧及び静電気寿命特
性測定に使用した静電気印加条件は１５００ｐＦ−０Ω
−１０ｋＶである。The surge absorbers of the embodiment and the comparative example were examined for electrical characteristics such as DC discharge starting voltage, insulation resistance, capacitance, electrostatic response voltage, and electrostatic life characteristic. Table 1 shows the results. Note that the static electricity application conditions used for measuring the static electricity response voltage and the static lifetime characteristic were 1500 pF-0Ω.
-10 kV.
【００１６】[0016]
【表１】 [Table 1]
【００１７】表１から明かなように、実施例及び比較例
のサージアブソーバとも同じ電気的特性を示した。As is apparent from Table 1, the surge absorbers of the embodiment and the comparative example exhibited the same electrical characteristics.
【００１８】[0018]
【発明の効果】以上述べたように、本発明によれば、絶
縁膜で覆ったシリコン素体を絶縁膜を介して一対の封止
電極で挟持して絶縁管に不活性ガスとともに封止するこ
とにより、従来のマイクロギャップ式のサージ吸収素子
と比べて、部品点数が少なくて済み、マイクロギャップ
を形成する工程が不要になるため、製造が簡単になる。
本発明のサージアブソーバは通常シリコン素体を覆う絶
縁膜が高絶縁抵抗膜として作用し、一対の封止電極間の
電気的絶縁を保つ。一方サージである瞬間的な異常電圧
が封止電極間に印加されると、放電現象が絶縁膜を挟ん
で封止電極とシリコン素体の間で発生し、異常電圧は瞬
時に吸収される。異常電圧が止むと、放電は停止し、封
止電極間の電気的絶縁は復元され、マイクロギャップ式
サージアブソーバと同等にサージを吸収することができ
る。As described above, according to the present invention, the silicon body covered with the insulating film is sandwiched between the pair of sealing electrodes via the insulating film and sealed in the insulating tube together with the inert gas. As a result, the number of components can be reduced as compared with the conventional micro-gap type surge absorbing element, and the step of forming the micro-gap is not required, thereby simplifying the manufacturing.
In the surge absorber of the present invention, the insulating film that normally covers the silicon body acts as a high insulation resistance film, and maintains electrical insulation between the pair of sealing electrodes. On the other hand, when an instantaneous abnormal voltage as a surge is applied between the sealing electrodes, a discharge phenomenon occurs between the sealing electrode and the silicon body with the insulating film interposed therebetween, and the abnormal voltage is instantaneously absorbed. When the abnormal voltage stops, the discharge stops, the electrical insulation between the sealing electrodes is restored, and the surge can be absorbed as in the case of the microgap surge absorber.
【図１】本発明実施例のサージアブソーバの中央断面
図。FIG. 1 is a central sectional view of a surge absorber according to an embodiment of the present invention.
【図２】その分解した状態を示す斜視図。FIG. 2 is a perspective view showing the disassembled state.
【図３】従来例サージアブソーバの中央断面図。FIG. 3 is a central sectional view of a conventional surge absorber.
【図４】別の従来例サージアブソーバの断面図。FIG. 4 is a cross-sectional view of another conventional surge absorber.
１０ サージアブソーバ １１ シリコン素体 １２，１３ 封止電極 １４ ガラス管（絶縁管） １５ 絶縁膜 Reference Signs List 10 surge absorber 11 silicon body 12, 13 sealing electrode 14 glass tube (insulating tube) 15 insulating film
───────────────────────────────────────────────────── フロントページの続き (72)発明者 池田 富士男 埼玉県秩父郡横瀬町大字横瀬2270番地 三菱マテリアル株式会社 セラミックス 研究所内 (56)参考文献 特開 平７−6853（ＪＰ，Ａ) 特開 昭62−237686（ＪＰ，Ａ) 特開 平３−250576（ＪＰ，Ａ) 実公 平４−19751（ＪＰ，Ｙ２) 実公 平２−3271（ＪＰ，Ｙ２) (58)調査した分野(Int.Cl.7，ＤＢ名) H01T 1/00 - 4/20 ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Fujio Ikeda 2270 Yokoze, Yokoze-cho, Chichibu-gun, Saitama Mitsubishi Materials Corporation Ceramics Research Laboratory (56) References JP-A 7-6853 (JP, A) JP-A Sho 62-237686 (JP, A) JP-A-3-250576 (JP, A) JP-A-4-19751 (JP, Y2) JP-A-2-3271 (JP, Y2) (58) Fields investigated (Int. Cl. 7 , DB name) H01T 1/00-4/20
Claims (4)
ン素体(11)が絶縁管(14)内に収容され、一対の封止電極
(12,13)が前記シリコン素体(11)の両端面にこれらの両
端面を覆った前記絶縁膜(15)を介してシリコン素体(11)
に密着しかつ前記絶縁管(14)の両端に不活性ガスを封入
して封着したことを特徴とするサージアブソーバ。 A silicon body whose entire surface is covered with an insulating film (15).
The element body (11) is housed in the insulating tube (14), and a pair of sealing electrodes
(12, 13) are provided on both end faces of the silicon body (11).
Silicon body (11) via the insulating film (15) covering the end face
Sealed with inert gas at both ends of the insulating tube (14)
A surge absorber characterized by being sealed .
である請求項１記載のサージアブソーバ。2. The surge absorber according to claim 1, wherein the insulating film is a silicon oxide film or a silicon nitride film.
ある請求項１記載のサージアブソーバ。3. The surge absorber according to claim 1, wherein the thickness of the insulating film is 0.5 to 10 μm.
〜１０００μｍである請求項１記載のサージアブソー
バ。4. An interval between a pair of sealing electrodes (12, 13) is 100.
The surge absorber according to claim 1, wherein the thickness is from 1000 to 1000 m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05314642A JP3134912B2 (en) | 1993-12-15 | 1993-12-15 | surge absorber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05314642A JP3134912B2 (en) | 1993-12-15 | 1993-12-15 | surge absorber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07169553A JPH07169553A (en) | 1995-07-04 |
| JP3134912B2 true JP3134912B2 (en) | 2001-02-13 |
Family
ID=18055788
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP05314642A Expired - Fee Related JP3134912B2 (en) | 1993-12-15 | 1993-12-15 | surge absorber |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3134912B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5760894B2 (en) * | 2011-09-22 | 2015-08-12 | Tdk株式会社 | ESD protection element |
-
1993
- 1993-12-15 JP JP05314642A patent/JP3134912B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07169553A (en) | 1995-07-04 |
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