JPH07162081A - Optical element - Google Patents

Optical element

Info

Publication number
JPH07162081A
JPH07162081A JP30824793A JP30824793A JPH07162081A JP H07162081 A JPH07162081 A JP H07162081A JP 30824793 A JP30824793 A JP 30824793A JP 30824793 A JP30824793 A JP 30824793A JP H07162081 A JPH07162081 A JP H07162081A
Authority
JP
Japan
Prior art keywords
optical
type
layer
reflecting film
type gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP30824793A
Other languages
Japanese (ja)
Other versions
JP2555962B2 (en
Inventor
Takaaki Numai
貴陽 沼居
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP5308247A priority Critical patent/JP2555962B2/en
Publication of JPH07162081A publication Critical patent/JPH07162081A/en
Application granted granted Critical
Publication of JP2555962B2 publication Critical patent/JP2555962B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H01S5/426—Vertically stacked cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To realize a surface emitting type optical element wherein the oscillation threshold value is low and the external differential quantum effect is large. CONSTITUTION:On an N-type substrate 10, the following are formed; an N-type multilayered reflecting film 11, an N-type layer 20, an active layer 12, a P-type layer 21 and a P-type multilayered reflecting film 13 which constitute an optical amplifier, a high resistance layer 14 which electrically isolates the optical amplifier from a light emitting element, and an N-type layer 15, an N-type multilayered reflecting film 16, an N-type layer 22, an active layer 17, a P-type layer 23, and a P-type multilayered reflecting film 18 which constitute a semiconductor laser. As the electrodes for the optical amplifier, a cathode 30 on the substrate 10 and an anode 31 on the P-type multilayered reflecting film 13 are selectively formed. As the electrodes for the semiconductor laser, a cathode 32 on the N-type layer 15 and an anode 30 on the P-type multilayered reflecting film 18 are selectively formed. Thereby a surface emitting optical element of high efficiency wherein the optical output is 1mW and the electric power/light conversion efficiency is 50% when the injection current is 1mA can be realized.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、光伝送や光情報処理用
の面発光型光素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface emitting optical device for optical transmission and optical information processing.

【０００２】[0002]

【従来の技術】光伝送や光情報処理の光源である半導体
レーザの研究が進められている。近年では、半導体レー
ザをアレイ状に配置し、並列光伝送や並列光情報処理に
利用しようとする試みが行われるようになった。導波型
半導体レーザでは、１次元のアレイ集積のみが可能だ
が、さらに２次元状に集積可能なレーザとして、面型半
導体レーザの研究が活発になってきている。2. Description of the Related Art Research on a semiconductor laser, which is a light source for optical transmission and optical information processing, is under way. In recent years, attempts have been made to arrange semiconductor lasers in an array and use them for parallel optical transmission and parallel optical information processing. In the waveguide type semiconductor laser, only one-dimensional array integration is possible, but as a laser that can be integrated in a two-dimensional form, research on a surface type semiconductor laser is becoming active.

【０００３】これらの半導体レーザを集積化するために
は、個々の素子の消費電力が小さいことが必要である。
このための１つの重要な課題として、発振しきい値の低
減があげられる。導波型レーザでは、発振しきい電流値
として２５０μＡが得られており、この結果は１９９２
年発行のチェン（Ｃｈｅｎ）他著のアプライド・フィジ
ックス・レターズ（Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ
Ｌｅｔｔｅｒｓ）第６０巻１７８２ページ記載の論文に
報告されている。今のところ、半導体レーザにおける最
小の発振しきい値は１９０μＡであり、これは面発光レ
ーザで実現されている。この結果は、１９９３年発行の
沼居他著のジャパニーズ・ジャーナル・オブ・アプライ
ド・フィジックス・パート２（Ｊａｐａｎｅｓｅ Ｊｏ
ｕｒｎａｌ ｏｆ Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ，
Ｐａｒｔ２）第３２巻１５３３ページ記載の論文に報告
されている。In order to integrate these semiconductor lasers, it is necessary that the power consumption of each element is small.
One important issue for this purpose is reduction of the oscillation threshold. In the waveguide laser, the oscillation threshold current value of 250 μA is obtained, and the result is 1992.
Applied Physics, by Chen et al., Published annually
Letters) Vol. 60, page 1782. At present, the minimum oscillation threshold of the semiconductor laser is 190 μA, which is realized by the surface emitting laser. The results are based on the Japanese Journal of Applied Physics Part 2 (Japanese Jo) published by Numai et al. In 1993.
internal of Applied Physics,
Part 2) Volume 32, page 1533.

【０００４】[0004]

【発明が解決しようとする課題】しかしながら、従来の
発振しきい値の低い発光素子には次のような課題が存在
する。発振しきい値を低減するためには、内部損失（吸
収損失、散乱損失、ミラー損失）等を低減することが必
要であるが、この中で最も発振しきい値の低減に効果が
あるのは、ミラー損失の低減である。そこで、従来の素
子では、ミラー損失を小さくする、すなわち、ミラーの
反射率を大きくすることによって、発振しきい値を低減
していた。しかし、反射率を大きくすると、光の共振器
外への取り出し効率が低下するため、外部微分量子効率
は小さくなってしまっていた。However, the conventional light emitting element having a low oscillation threshold has the following problems. In order to reduce the oscillation threshold, it is necessary to reduce internal loss (absorption loss, scattering loss, mirror loss), etc., but the most effective reduction of the oscillation threshold is , Reduction of mirror loss. Therefore, in the conventional element, the oscillation threshold is reduced by reducing the mirror loss, that is, by increasing the reflectance of the mirror. However, when the reflectance is increased, the extraction efficiency of light to the outside of the resonator is reduced, and thus the external differential quantum efficiency is reduced.

【０００５】そこで、本発明は、２次元集積化に適した
面発光素子において、低発振しきい値で、かつ外部微分
量子効率の大きい、すなわち消費電力の小さい特性を実
現することを目的とする。Therefore, an object of the present invention is to realize, in a surface-emitting device suitable for two-dimensional integration, a characteristic of a low oscillation threshold and a large external differential quantum efficiency, that is, a small power consumption. .

【０００６】[0006]

【課題を解決するための手段】本発明の光素子は、３次
元の光共振器において少なくとも１次元のサイズが共振
波長程度である光共振器を有する面発光素子と、共振波
長にくらべて充分大きなサイズ光増幅器とが光の伝播方
向に沿って直列に配置されていることを特徴とする。The optical element of the present invention has a surface emitting element having a three-dimensional optical resonator having an optical resonator having a size of at least one dimension of the resonance wavelength, and a surface emitting element which is sufficiently larger than the resonance wavelength. It is characterized in that a large size optical amplifier is arranged in series along the propagation direction of light.

【０００７】あるいは、前記の光素子において、面発光
素子または光増幅素子が波長可変、受光、メモリ、しき
い値機能等の機能も有する光機能素子であることを特徴
とする。Alternatively, in the above-mentioned optical element, the surface emitting element or the optical amplifying element is an optical functional element having functions such as wavelength tunability, light reception, memory, and threshold function.

【０００８】あるいは、前述までの光素子が、１次元あ
るいは２次元上に集積して配置されたことを特徴とす
る。Alternatively, it is characterized in that the above-mentioned optical elements are integrated and arranged one-dimensionally or two-dimensionally.

【０００９】[0009]

【作用】本発明の光素子では、極めて小さい発振しきい
値を実現するために、ミラー損失を小さくするだけでな
く、共振波長と同程度のサイズの光共振器を用いる。こ
のような微小光共振器では、自然放出光のうち多くの部
分がレーザ発振モードに結合する。そのため、１００μ
Ａ以下の極めて低い発振しきい値が期待できる。しかし
ながら、光共振器が極めて小さい（発振波長１μｍ、屈
折率３．５とすると光共振器のサイズは０．２９μｍ）
ことと、ミラーの反射率が極めて大きいため、レーザ光
の強度は、１０μＷのオーダーである。そこで、光強度
を増幅するために、レーザー光の伝播方向に沿って、面
発光素子と直列に光増幅器を配置する。単位面積あたり
の量子効率が一定であるとすると、高出力化には素子の
大面積化が有利である。そのため、光増幅器のサイズ
は、共振波長に比べて充分大きくする。たとえば、光増
幅器の光の伝播方向に垂直な断面の大きさを１０μｍ×
１０μｍとする。面発光素子と光増幅器との間の回折に
よってレーザービームが広がるため、光増幅器の活性層
全体でレーザー光を増幅することができる。光増幅器の
構造は、基本的に半導体レーザと同じであるが、発振し
ない状態で使用するため、半導体レーザに比べてミラー
の反射率を下げてあることが多い。たとえば、光増幅器
が発振しきい値１ｍＡでレーザ発振するように設計して
おき、光増幅器に０．９８ｍＡの電流（発振しきい値の
０．９８倍）を流しておけば、光増幅器の利得は、１０
μＷの入射光に対して２０ｄＢ以上であるので、光増幅
器からの光出力として１ｍＷ以上が得られることにな
る。In the optical element of the present invention, in order to realize an extremely small oscillation threshold value, not only the mirror loss is reduced, but also an optical resonator having a size similar to the resonance wavelength is used. In such a micro optical resonator, most of spontaneous emission light is coupled to the laser oscillation mode. Therefore, 100μ
An extremely low oscillation threshold of A or less can be expected. However, the optical resonator is extremely small (assuming that the oscillation wavelength is 1 μm and the refractive index is 3.5, the size of the optical resonator is 0.29 μm).
In addition, since the reflectance of the mirror is extremely high, the intensity of the laser light is on the order of 10 μW. Therefore, in order to amplify the light intensity, an optical amplifier is arranged in series with the surface emitting element along the propagation direction of the laser light. If the quantum efficiency per unit area is constant, it is advantageous to increase the area of the device for higher output. Therefore, the size of the optical amplifier is made sufficiently larger than the resonance wavelength. For example, the size of the cross section perpendicular to the light propagation direction of the optical amplifier is 10 μm ×
10 μm. Since the laser beam is spread by the diffraction between the surface emitting element and the optical amplifier, the laser light can be amplified in the entire active layer of the optical amplifier. The structure of the optical amplifier is basically the same as that of the semiconductor laser, but since it is used in a state where it does not oscillate, the reflectance of the mirror is often lower than that of the semiconductor laser. For example, if the optical amplifier is designed to oscillate at the oscillation threshold of 1 mA and a current of 0.98 mA (0.98 times the oscillation threshold) is applied to the optical amplifier, the gain of the optical amplifier is increased. Is 10
Since it is 20 dB or more for incident light of μW, 1 mW or more is obtained as the optical output from the optical amplifier.

【００１０】また、前述の光素子において、面発光素子
または光増幅素子が波長可変、受光、メモリ、しきい値
機能等の機能も有する光機能素子であれば、単なる光伝
送だけでなく、スイッチングやルーティングなどの機能
を比較的簡単な駆動回路で構成することが可能となる。
さらに、前述までの光素子を１次元あるいは２次元上に
集積して配置すれば、並列光伝送、光接続、光情報処理
が可能となる。Further, in the above-mentioned optical element, if the surface emitting element or the optical amplifying element is an optical functional element having functions such as wavelength tunability, light reception, memory, and threshold function, not only simple optical transmission but also switching. Functions such as routing and routing can be configured with a relatively simple drive circuit.
Furthermore, if the above-described optical elements are integrated and arranged in one dimension or two dimensions, parallel optical transmission, optical connection, and optical information processing become possible.

【実施例】図面を参照して、本実施例を詳細に説明す
る。図１は、本発明の第１の実施例の面光型光素子の構
造を示す断面図である。ｎ形ＧａＡｓ基板１０上に光増
幅器を構成するｎ形ＧａＡｓ／ＡｌＡｓ多層反射膜（Ｄ
ＢＲ）１１、ｎ形ＧａＡｓ層２０、Ｉｎ0 . 2 Ｇａ
0 . 8 Ａｓ活性層１２、ｐ形ＧａＡｓ層２１、ｐ形Ｇａ
Ａｓ／ＡｌＡｓ多層反射膜（ＤＢＲ）１３、光増幅器と
発光素子とを電気的に分離する高抵抗ＧａＡｓ１４、半
導体（発光素子）を構成するｎ形ＧａＡｓ層１５、ｎ形
ＧａＡｓ／ＡｌＡｓ多層反射膜（ＤＢＲ）１６、ｎ形Ｇ
ａＡｓ層２２、Ｉｎ0 . 2 Ｇａ0 . 8 Ａｓ活性層１７、
ｐ形ＧａＡｓ層２３、ｐ形ＧａＡｓ／ＡｌＡｓ多層反射
膜（ＤＢＲ）１８を形成してある。光増幅器用の電極と
して基板１０上にカソード３０を、ｐ形ＧａＡｓ／Ａｌ
Ａｓ多層反射膜１３上にアノード３１をそれぞれ選択的
に形成してある。一方、半導体レーザ（発光素子）用の
電極としてｎ形ＧａＡｓ層１５上にカソード３２を、ｐ
形ＧａＡｓ／ＡｌＡｓ多層反射膜１８上にアノード３３
をそれぞれ選択的に形成してある。DESCRIPTION OF THE PREFERRED EMBODIMENTS This embodiment will be described in detail with reference to the drawings. FIG. 1 is a sectional view showing the structure of a surface light type optical element according to the first embodiment of the present invention. On the n-type GaAs substrate 10, an n-type GaAs / AlAs multilayer reflection film (D
BR) 11, n-type GaAs layer 20, In 0. 2 Ga
0.8 As active layer 12, p-type GaAs layer 21, p-type Ga
As / AlAs multilayer reflection film (DBR) 13, high resistance GaAs 14 for electrically separating an optical amplifier and a light emitting element, n-type GaAs layer 15 constituting a semiconductor (light emitting element), n-type GaAs / AlAs multilayer reflection film ( DBR) 16, n type G
aAs layer 22, In 0. 2 Ga 0 . 8 As active layer 17,
A p-type GaAs layer 23 and a p-type GaAs / AlAs multilayer reflective film (DBR) 18 are formed. A cathode 30 is formed on the substrate 10 as an electrode for an optical amplifier, and p-type GaAs / Al.
Anodes 31 are selectively formed on the As multilayer reflective film 13. On the other hand, a cathode 32 is formed on the n-type GaAs layer 15 as an electrode for a semiconductor laser (light emitting device),
Anode 33 on the GaAs / AlAs multilayer reflective film 18
Are selectively formed.

【００１１】この発光素子では、ｎ形多層反射膜１６と
ｐ形多層反射膜１８との間隔、すなわち共振器長が０．
３μｍであり、円筒の直径は２μｍである。発振しきい
値５０μＡでレーザ発振し、１００μＡ電流を流したと
きに光出力は１０μＷである。なお、発振波長は１μｍ
である。一方、光増幅器の円筒部の直径は１０μｍであ
り、０．９ｍＡ電流を注入するとこの光増幅器もレーザ
発振する。発振しきい値の０．９８倍、すなわち、０．
８８ｍＡの電流を注入すると、光利得２０ｄＢが得ら
れ、その結果１ｍＷの光出力が基板１０を通して出射さ
れる。駆動電圧は、いずれも２Ｖであり、電力変換効率
として５０％という高い値が得られる。In this light emitting device, the distance between the n-type multilayer reflective film 16 and the p-type multilayer reflective film 18, that is, the cavity length is 0.
3 μm and the diameter of the cylinder is 2 μm. When the laser is oscillated with an oscillation threshold of 50 μA and a current of 100 μA is applied, the optical output is 10 μW. The oscillation wavelength is 1 μm
Is. On the other hand, the diameter of the cylindrical portion of the optical amplifier is 10 μm, and when a 0.9 mA current is injected, this optical amplifier also oscillates a laser. 0.98 times the oscillation threshold, that is, 0.
When a current of 88 mA is injected, an optical gain of 20 dB is obtained, and as a result, an optical output of 1 mW is emitted through the substrate 10. The drive voltage is 2 V in each case, and a high value of 50% is obtained as the power conversion efficiency.

【００１２】図２は、本発明の第２の実施例の面発光型
光素子の構造を示す断面図である。図１との違いは、光
増幅器に波長可変機能を設けるため、ｎ形多層反射膜１
１上に電流注入用の電極３４を設けたことである。電極
３４とカソード３０との間に電流を流すことによってｎ
形多層反射膜１１のブラッグ波長が変化するため、光増
幅器の波長可変動作を実現することができる。FIG. 2 is a sectional view showing the structure of a surface emitting optical element according to the second embodiment of the present invention. The difference from FIG. 1 is that the n-type multilayer reflective film 1 is provided because the optical amplifier has a wavelength variable function.
That is, the electrode 34 for current injection is provided on the first electrode 1. By passing an electric current between the electrode 34 and the cathode 30,
Since the Bragg wavelength of the multi-layer reflective film 11 changes, the wavelength variable operation of the optical amplifier can be realized.

【００１３】図３は、本発明の第３の実施例の面発光型
光素子の構造を示す断面図である。図１との違いは、光
増幅器に波長可変機能を設けるため、ｎ形多層反射膜１
６上に電流注入用の電極３５を設けたことである。電極
３５とカソード３２との間に電流を流すことによってｎ
形多層反射膜１６のブラック波長が変化するため、光増
幅器の波長可変動作を実現することができる。FIG. 3 is a sectional view showing the structure of a surface emitting optical element according to the third embodiment of the present invention. The difference from FIG. 1 is that the n-type multilayer reflective film 1 is provided because the optical amplifier has a wavelength variable function.
That is, the electrode 35 for current injection is provided on the electrode 6. By passing an electric current between the electrode 35 and the cathode 32,
Since the black wavelength of the multi-layer reflective film 16 changes, the wavelength variable operation of the optical amplifier can be realized.

【００１４】図４は、本発明の第４の実施例の面発光型
光素子の構造を示す断面図である。図１との違いは、光
増幅器が、ｎ形ＧａＡｓ層４０、ｐ形ＧａＡｓ層４１、
活性層１２、ｎ形ＧａＡｓ層４２、ｐ形ＧａＡｓ層４３
からなるｐｎｐｎ構造をとっており、光増幅だけでなく
受光、メモリ、しきい値機能を持つことができる。FIG. 4 is a sectional view showing the structure of a surface emitting optical element according to the fourth embodiment of the present invention. The difference from FIG. 1 is that the optical amplifier has an n-type GaAs layer 40, a p-type GaAs layer 41,
Active layer 12, n-type GaAs layer 42, p-type GaAs layer 43
It has a pnpn structure and is capable of not only light amplification but also light reception, memory, and threshold function.

【００１５】図５は、本発明の第５の実施例の面発光型
光素子の構造を示す断面図である。これは、第４の実施
例において、電極３４を設けることにより第２の実施例
と同様な波長可変動作を実現したものである。FIG. 5 is a sectional view showing the structure of a surface emitting optical element according to the fifth embodiment of the present invention. This is because the wavelength tunable operation similar to that of the second embodiment is realized by providing the electrode 34 in the fourth embodiment.

【００１６】図６は、本発明の第６の実施例の面発光型
光素子の構造を示す断面図である。これは第４の実施例
において、電極３５を設けて、第３の実施例と同様な波
長可変動作を実現したものである。FIG. 6 is a sectional view showing the structure of a surface emitting optical element according to the sixth embodiment of the present invention. This is achieved by providing the electrode 35 in the fourth embodiment and realizing the same wavelength tunable operation as in the third embodiment.

【００１７】図７は、本発明の第７の実施例の面発光型
光素子の構造を示す断面図である。図１との違いは、発
光素子が、ｎ形ＧａＡｓ層５０、ｐ形ＧａＡｓ層５１、
活性層１７、ｎ形ＧａＡｓ層５２、ｐ形ＧａＡｓ層５３
からなるｐｎｐｎ構造をとっており、発光だけでなく受
光、メモリ、しきい値機能を持つことができる。FIG. 7 is a sectional view showing the structure of a surface emitting optical element according to the seventh embodiment of the present invention. The difference from FIG. 1 is that the light emitting element is composed of an n-type GaAs layer 50, a p-type GaAs layer 51,
Active layer 17, n-type GaAs layer 52, p-type GaAs layer 53
It has a pnpn structure and is capable of not only light emission but also light reception, memory, and threshold function.

【００１８】図８は、本発明の第８の実施例の面発光型
光素子の構造を示す断面図である。これは、第７の実施
例において、第２の実施例と同様な波長可変動作を実現
したものである。FIG. 8 is a sectional view showing the structure of a surface emitting optical element according to the eighth embodiment of the present invention. This realizes the same wavelength tunable operation as in the second embodiment in the seventh embodiment.

【００１９】図９は、本発明の第８の実施例の面発光型
光素子の構造を示す断面図である。これは第７の実施例
において、第３の実施例と同様な波長可変動作を実現し
たものである。FIG. 9 is a sectional view showing the structure of a surface emitting optical element according to the eighth embodiment of the present invention. In the seventh embodiment, the wavelength tunable operation similar to that of the third embodiment is realized.

【００２０】図１０は、本発明の第１０の実施例の面発
光型光素子の構造を示す上面図である。これは、第１の
実施例の素子を２次元状に配列したもものである。これ
により、並列の光伝送を行うことができる。第２から第
９の実施例の素子を図１０と同様に２次元状に配列すれ
ば、光交換や光機能接続なども可能となる。FIG. 10 is a top view showing the structure of a surface emitting optical element according to the tenth embodiment of the present invention. This is a two-dimensional array of the elements of the first embodiment. This allows parallel optical transmission. By arranging the elements of the second to ninth embodiments two-dimensionally as in the case of FIG. 10, optical exchange and optical functional connection can be performed.

【００２１】なお、半導体材料については上述のＧａＡ
ｓ系に限定する必要はなく、例えばＡｌを含んだ系やＩ
ｎＰ系の材料であってもよい。Regarding the semiconductor material, the above-mentioned GaA is used.
It is not necessary to limit to s system, for example, a system containing Al or I
It may be an nP-based material.

【００２２】[0022]

【発明の効果】光素子として、２次元集積化に適した消
費電力の小さい素子（光出力１ｍＷ時に電力／光変換効
率５０％）を実現することができる。As an optical element, an element with low power consumption suitable for two-dimensional integration (power / optical conversion efficiency of 50% at an optical output of 1 mW) can be realized.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の第１の実施例の光素子の構造を示す断
面図である。FIG. 1 is a cross-sectional view showing the structure of an optical device according to a first embodiment of the present invention.

【図２】本発明の第２の実施例の光素子の構造を示す断
面図である。FIG. 2 is a sectional view showing the structure of an optical device according to a second embodiment of the present invention.

【図３】本発明の第３の実施例の光素子の構造を示す断
面図である。FIG. 3 is a sectional view showing the structure of an optical device according to a third embodiment of the present invention.

【図４】本発明の第４の実施例の光素子の構造を示す断
面図である。FIG. 4 is a sectional view showing the structure of an optical device according to a fourth embodiment of the present invention.

【図５】本発明の第５の実施例の光素子の構造を示す断
面図である。FIG. 5 is a sectional view showing the structure of an optical device according to a fifth embodiment of the present invention.

【図６】本発明の第６の実施例の光素子の構造を示す断
面図である。FIG. 6 is a sectional view showing the structure of an optical device according to a sixth embodiment of the present invention.

【図７】本発明の第７の実施例の光素子の構造を示す断
面図である。FIG. 7 is a sectional view showing the structure of an optical device according to a seventh embodiment of the present invention.

【図８】本発明の第８の実施例の光素子の構造を示す断
面図である。FIG. 8 is a sectional view showing the structure of an optical device according to an eighth embodiment of the present invention.

【図９】本発明の第９の実施例の光素子の構造を示す断
面図である。FIG. 9 is a sectional view showing the structure of an optical device according to a ninth embodiment of the present invention.

【図１０】本発明の第１０の実施例の光素子の構造を示
す断面図である。FIG. 10 is a sectional view showing the structure of an optical device according to a tenth embodiment of the present invention.

【符号の説明】[Explanation of symbols]

１０ ｎ形ＧａＡｓ基板 １１ ｎ形ＧａＡｓ／ＡｌＡｓ多層反射膜 １２ Ｉｎ0 . 2 Ｇａ0 . 8 Ａｓ活性層 １３ ｐ形ＧａＡｓ／ＡｌＡｓ多層反射膜 １４ 高抵抗ＧａＡｓ層 １５ ｎ形ＧａＡｓ層 １６ ｎ形ＧａＡｓ／ＡｌＡｓ多層反射膜 １７ Ｉｎ0 . 2 Ｇａ0 . 8 Ａｓ活性層 １８ ｐ形ＧａＡｓ／ＡｌＡｓ多層反射膜 ２０ ｎ形ＧａＡｓ層 ２１ ｐ形ＧａＡｓ層 ２２ ｎ形ＧａＡｓ層 ２３ ｐ形ＧａＡｓ層 ３０ カソード ３１ アノード ３２ カソード ３３ アノード ３４ 電極 ３５ 電極 ４０ ｎ形ＧａＡｓ層 ４１ ｐ形ＧａＡｓ層 ４２ ｎ形ＧａＡｓ層 ４３ ｐ形ＧａＡｓ層 ５０ ｎ形ＧａＡｓ層 ５１ ｐ形ＧａＡｓ層 ５２ ｎ形ＧａＡｓ層 ５３ ｐ形ＧａＡｓ層10 n-type GaAs substrate 11 n-type GaAs / AlAs multilayer reflective film 12 In 0. 2 Ga 0. 8 As active layer 13 p-type GaAs / AlAs multilayer reflective film 14 a high resistance GaAs layer 15 n-type GaAs layer 16 n-type GaAs / AlAs multilayer reflective film 17 In 0. 2 Ga 0. 8 As active layer 18 p-type GaAs / AlAs multilayer reflective film 20 n-type GaAs layer 21 p-type GaAs layer 22 n-type GaAs layer 23 p-type GaAs layer 30 cathode 31 anode 32 Cathode 33 Anode 34 Electrode 35 Electrode 40 n-type GaAs layer 41 p-type GaAs layer 42 n-type GaAs layer 43 p-type GaAs layer 50 n-type GaAs layer 51 p-type GaAs layer 52 n-type GaAs layer 53 p-type GaAs layer

Claims (3)

【特許請求の範囲】[Claims] 【請求項１】 ３次元の光共振器において少なくとも１
次元のサイズが共振波長程度である光共振器を有する面
発光素子と、共振波長にくらべて充分大きなサイズの光
増幅器とが光の伝播方向に沿って直列に配置されている
ことを特徴とする光素子。1. At least one in a three-dimensional optical resonator.
It is characterized in that a surface emitting element having an optical resonator whose dimension size is approximately the resonance wavelength and an optical amplifier having a size sufficiently larger than the resonance wavelength are arranged in series along the light propagation direction. Optical element. 【請求項２】 請求項１の光素子において、前記面発光
素子または、光増幅素子が波長可変、または受光、また
はメモリ、またはしきい値機能の機能も有する光機能素
子であることを特徴とする光素子。2. The optical element according to claim 1, wherein the surface emitting element or the optical amplifying element is an optical functional element having a wavelength tunable property, a light receiving property, a memory, or a threshold function. Optical element to do. 【請求項３】 請求項１または請求項２の光素子が、１
次元あるいは２次元上に配置されたことを特徴とする集
積光素子。3. The optical element according to claim 1 or 2,
An integrated optical device characterized by being arranged in one dimension or two dimensions.
JP5308247A 1993-12-08 1993-12-08 Optical element Expired - Lifetime JP2555962B2 (en)

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JPH07162081A true JPH07162081A (en) 1995-06-23
JP2555962B2 JP2555962B2 (en) 1996-11-20

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ID=17978715

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