JPH0714905A - Vacuum treatment vessel with substrate transfer mechanism in semiconductor manufacturing device - Google Patents
Vacuum treatment vessel with substrate transfer mechanism in semiconductor manufacturing deviceInfo
- Publication number
- JPH0714905A JPH0714905A JP15556893A JP15556893A JPH0714905A JP H0714905 A JPH0714905 A JP H0714905A JP 15556893 A JP15556893 A JP 15556893A JP 15556893 A JP15556893 A JP 15556893A JP H0714905 A JPH0714905 A JP H0714905A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- transfer mechanism
- substrate transfer
- vacuum
- vacuum chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体製造装置における
基板搬送機構付真空処理槽に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum processing tank with a substrate transfer mechanism in a semiconductor manufacturing apparatus.
【０００２】[0002]
【従来の技術】従来のプラズマ処理装置において、図３
は従来の装置の垂直断面図、図４はその直交方向の垂直
断面図で、右半分は基板搬送時，左半分は成膜時を示
す。処理を行う真空槽１において、図示のように外槽２
内には内槽３を設ける。内槽３内の上部にはカソード４
を設け、その中心には上方よりの外槽２の中心の供給孔
５に供給されたプロセスガスの通孔６を設ける。内槽３
の下方にはアノード７を設け、このアノード７内には処
理する基板８を載せた搬送用のロボットアーム９を挿入
し、このロボットアーム９は外槽２の搬送口１０より次
の真空槽に基板８を搬送するものとする。2. Description of the Related Art In a conventional plasma processing apparatus, FIG.
4 is a vertical sectional view of a conventional apparatus, and FIG. 4 is a vertical sectional view in a direction orthogonal to the conventional apparatus. In the vacuum tank 1 for processing, as shown in the figure, the outer tank 2
An inner tank 3 is provided inside. At the top of the inner tank 3 is a cathode 4
A through hole 6 for the process gas supplied to the supply hole 5 at the center of the outer tank 2 from above is provided at the center. Inner tank 3
An anode 7 is provided below the robot 7, and a robot arm 9 for carrying a substrate 8 to be processed is inserted into the anode 7. The robot arm 9 is transferred from the carrier port 10 of the outer tank 2 to the next vacuum tank. It is assumed that the substrate 8 is transported.
【０００３】外槽２の下部中心には基板上下シャフト１
１を基板上下用エアシリンダ１２により上下動すべく設
け、この基板上下シャフト１１の上端に固定した基板上
下ベース１３には基板８を上下動させる基板上下ピン１
４を植設する。外槽２の下部の周辺にはアノード上下シ
ャフト１５をアノード上下用エアシリンダ１６により上
下動すべく設け、このアノード上下シャフト１５の上端
に固定したアノード上下ベース１７には上記アノード７
を支持する。At the center of the lower part of the outer tank 2, the substrate upper and lower shafts 1
1 is provided to move up and down by a substrate up-and-down air cylinder 12, and a substrate up-and-down base 1 fixed to the upper end of the substrate up-down shaft 11 moves the substrate 8 up and down.
Plant 4. Around the lower part of the outer tank 2, an anode vertical shaft 15 is provided to be vertically moved by an anode vertical air cylinder 16, and the anode upper and lower base 17 fixed to the upper end of the anode vertical shaft 15 has the anode 7
Support.
【０００４】基板８の搬送を行う機構が真空槽１の中心
に設けられているため、プロセスガスの排気は中心から
はずれた位置に設けた排気孔２０を通して行っている。
図中、矢印はプロセスガスの通路を示す。また、図５，
６は真空槽１内の排気を、中心に設けた排気孔２０によ
り行なえるようにした場合を示すもので、図３，４と同
じ部分は同じ符号を用いて説明する。この場合、排気孔
２０は外槽２の下部中心に設けられ、基板上下シャフト
１１はアノード上下シャフト１５と同様に外槽２の下部
周辺の中心よりずれた位置に設けられている。この場合
基板上下シャフト１１は真空槽１の下方に設けられる。
図中、矢印はプロセスガスの通路を示す。Since the mechanism for carrying the substrate 8 is provided at the center of the vacuum chamber 1, the process gas is exhausted through an exhaust hole 20 provided at a position deviated from the center.
In the figure, the arrow indicates the passage of the process gas. Also, in FIG.
6 shows the case where the exhaust in the vacuum chamber 1 can be performed by the exhaust hole 20 provided at the center, and the same parts as those in FIGS. 3 and 4 will be described using the same reference numerals. In this case, the exhaust hole 20 is provided at the center of the lower portion of the outer tank 2, and the substrate vertical shaft 11 is provided at a position displaced from the center of the lower peripheral portion of the outer tank 2 as with the anode vertical shaft 15. In this case, the substrate vertical shaft 11 is provided below the vacuum chamber 1.
In the figure, the arrow indicates the passage of the process gas.
【０００５】[0005]
【発明が解決しようとする課題】しかし、図３，４示の
装置はプロセスガスを真空槽１の中心からはずれた位置
で行っているため、基板１の外周より均一に排気するこ
とが難しいという欠点がある。また、図５，６示の装置
はフィードスルー部が増え、構造が複雑になり、また、
真空に対する信頼性（０リングの数が増え、Ｏリングか
らのアウトガスを含むリーク量が増える），保守性（定
期的にＯリングを交換しなければならない、また、使っ
ている間にリークが発生する可能性がある）が落ちると
いう欠点がある。However, since the apparatus shown in FIGS. 3 and 4 performs the process gas at a position deviated from the center of the vacuum chamber 1, it is difficult to uniformly exhaust the process gas from the outer periphery of the substrate 1. There are drawbacks. In addition, the device shown in FIGS. 5 and 6 has an increased number of feedthrough portions, which makes the structure complicated, and
Reliability against vacuum (the number of 0-rings increases, the amount of leak gas including outgas from the O-ring increases), maintainability (the O-ring must be replaced regularly, and leaks occur during use) There is a drawback that it falls).
【０００６】本発明の目的は、従来の真空槽内排気を中
心から行なえるようにしつつ、基板搬送機構でのフィー
ドスルー部を最小にすることのできる均一排気可能な基
板搬送機構付真空処理槽を提供することにある。An object of the present invention is to provide a vacuum processing tank with a substrate transfer mechanism capable of uniform exhaustion while minimizing the feed-through portion in the substrate transfer mechanism while allowing the conventional vacuum chamber exhaust to be performed from the center. To provide.
【０００７】[0007]
【課題を解決するための手段】本発明は上記の課題に鑑
みてなされたもので、真空槽１と、その真空槽１の内部
のカソード４と、アノード７と、基板８を搬送するロボ
ットアーム９と、基板上下シャフト１１と、アノード上
下シャフト１５とよりなり、真空槽１の中心には基板搬
送機構を包囲する大きさのプロセスガスの排気用マニホ
ールド２１を設けてなるものである。The present invention has been made in view of the above problems, and a robot arm for transporting a vacuum chamber 1, a cathode 4 inside the vacuum chamber 1, an anode 7, and a substrate 8. 9, a substrate upper and lower shaft 11, and an anode upper and lower shaft 15, and at the center of the vacuum chamber 1, a process gas exhaust manifold 21 having a size surrounding the substrate transfer mechanism is provided.
【０００８】[0008]
【作用】排気用マニホールド２１から排気することで真
空槽１内のプロセスガスの均一排気を可能にする。Operation: By exhausting from the exhaust manifold 21, the process gas in the vacuum chamber 1 can be uniformly exhausted.
【０００９】[0009]
【実施例】以下図１，２につき本発明の一実施例を従来
例と同じ部分は同じ符号を用いて説明する。真空槽１内
排気を中心から行うためと、基板上下シャフト１１，基
板上下用エアシリンダ１２等の基板搬送機構を外槽２の
下部中心に設け、大気と真空のフィードスルー部を最小
にするために、上記基板上下シャフト１１，基板上下用
エアシリンダ１２等の基板搬送機構を包囲する大きさの
排気用マニホールド２１を設け、この排気用マニホール
ド２１の側面には排気管２２を連結する。DESCRIPTION OF THE PREFERRED EMBODIMENT An embodiment of the present invention will be described below with reference to FIGS. In order to exhaust the inside of the vacuum chamber 1 from the center and to provide a substrate transfer mechanism such as the substrate vertical shaft 11 and the substrate vertical air cylinder 12 in the lower center of the outer chamber 2 so as to minimize the feedthrough part between the atmosphere and vacuum. Further, an exhaust manifold 21 having a size enclosing a substrate transfer mechanism such as the substrate vertical shaft 11 and the substrate vertical air cylinder 12 is provided, and an exhaust pipe 22 is connected to a side surface of the exhaust manifold 21.
【００１０】本発明はかかる構成よりなるものであるか
ら、プロセスガスを真空槽１の中心に設けた排気用マニ
ホールド２１の側面から排気することで真空槽１内を均
一に排気でき、また排気用マニホールド２１底面に上記
基板搬送機構を設けることでフィードスルー部を最小に
することができる。この場合、真空槽１内容積をできる
だけ小さくするため、また真空槽１内をできるだけ均一
に排気するために、排気用マニホールド２１内容積を小
容積にし、排気口をできるだけ中心よりにするとよい。Since the present invention has such a structure, by exhausting the process gas from the side surface of the exhaust manifold 21 provided at the center of the vacuum chamber 1, the interior of the vacuum chamber 1 can be uniformly exhausted and the exhaust gas can be exhausted. By providing the substrate transfer mechanism on the bottom surface of the manifold 21, the feedthrough portion can be minimized. In this case, in order to make the internal volume of the vacuum chamber 1 as small as possible and to exhaust the interior of the vacuum chamber 1 as uniformly as possible, it is preferable that the internal volume of the exhaust manifold 21 be made small and the exhaust port be as close to the center as possible.
【００１１】[0011]
【発明の効果】以上のように本発明によれば、真空槽１
内のプロセスガスを均一に排気することが可能であるた
め、プロセスガスは処理基板８の外周から均一に排気さ
れ、基板処理の均一性は向上される。また、基板搬送機
構での大気と真空フィードスルー部を最小にすること
で、真空洩れの虞が減少し、信頼性，保守性が向上され
る。As described above, according to the present invention, the vacuum chamber 1
Since it is possible to uniformly exhaust the process gas therein, the process gas is uniformly exhausted from the outer periphery of the processing substrate 8, and the uniformity of substrate processing is improved. Further, by minimizing the atmosphere and the vacuum feedthrough portion in the substrate transfer mechanism, the risk of vacuum leakage is reduced, and reliability and maintainability are improved.
【図面の簡単な説明】[Brief description of drawings]
【図１】本発明の一実施例の垂直断面図である。FIG. 1 is a vertical sectional view of an embodiment of the present invention.
【図２】その直交方向の垂直断面図で、右半分は基板搬
送時，左半分は成膜時を示す。FIG. 2 is a vertical cross-sectional view in the orthogonal direction, in which the right half shows a substrate transfer and the left half shows a film formation.
【図３】従来の装置の垂直断面図である。FIG. 3 is a vertical sectional view of a conventional device.
【図４】その直交方向の垂直断面図で、右半分は基板搬
送時，左半分は成膜時を示す。FIG. 4 is a vertical cross-sectional view in the orthogonal direction, in which the right half shows the substrate transfer and the left half shows the film formation.
【図５】従来の別の装置の垂直断面図である。FIG. 5 is a vertical cross-sectional view of another conventional device.
【図６】その直交方向の垂直断面図で、右半分は基板搬
送時，左半分は成膜時を示す。FIG. 6 is a vertical cross-sectional view in the orthogonal direction, in which the right half shows the substrate transfer and the left half shows the film formation.
１ 真空槽 ４ カソード ７ アノード ８ 基板 ９ ロボットアーム １１ 基板上下シャフト １５ アノード上下シャフト ２１ 排気用マニホールド 1 Vacuum Tank 4 Cathode 7 Anode 8 Substrate 9 Robot Arm 11 Substrate Vertical Shaft 15 Anode Vertical Shaft 21 Exhaust Manifold
Claims (1)
と、アノードと、基板を搬送するロボットアームと、基
板上下シャフトと、アノード上下シャフトとよりなり、
真空槽の中心には基板搬送機構を包囲する大きさのプロ
セスガスの排気用マニホールドを設け、この排気用マニ
ホールドから排気することで真空槽内のプロセスガスの
均一排気を可能にしたことを特徴とする半導体製造装置
における基板搬送機構付真空処理槽。1. A vacuum chamber, a cathode inside the vacuum chamber, an anode, a robot arm for transporting a substrate, a substrate vertical shaft, and an anode vertical shaft,
At the center of the vacuum chamber, a process gas exhaust manifold of a size surrounding the substrate transfer mechanism is provided, and by exhausting from this exhaust manifold, the process gas in the vacuum chamber can be uniformly exhausted. Vacuum processing tank with substrate transfer mechanism for semiconductor manufacturing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15556893A JPH0714905A (en) | 1993-06-25 | 1993-06-25 | Vacuum treatment vessel with substrate transfer mechanism in semiconductor manufacturing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15556893A JPH0714905A (en) | 1993-06-25 | 1993-06-25 | Vacuum treatment vessel with substrate transfer mechanism in semiconductor manufacturing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0714905A true JPH0714905A (en) | 1995-01-17 |
Family
ID=15608891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15556893A Pending JPH0714905A (en) | 1993-06-25 | 1993-06-25 | Vacuum treatment vessel with substrate transfer mechanism in semiconductor manufacturing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0714905A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100429434B1 (en) * | 1997-07-04 | 2004-07-01 | 동경 엘렉트론 주식회사 | Substrate Carrier and Substrate Processing Equipment Using It |
| CN106591941A (en) * | 2016-10-31 | 2017-04-26 | 中国电子科技集团公司第四十八研究所 | Silicon epitaxy reaction chamber |
| CN115188871A (en) * | 2022-09-13 | 2022-10-14 | 昆山鸿仕达智能科技股份有限公司 | Microminiature LED transfer device, transfer method and bearing frame |
-
1993
- 1993-06-25 JP JP15556893A patent/JPH0714905A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100429434B1 (en) * | 1997-07-04 | 2004-07-01 | 동경 엘렉트론 주식회사 | Substrate Carrier and Substrate Processing Equipment Using It |
| CN106591941A (en) * | 2016-10-31 | 2017-04-26 | 中国电子科技集团公司第四十八研究所 | Silicon epitaxy reaction chamber |
| CN115188871A (en) * | 2022-09-13 | 2022-10-14 | 昆山鸿仕达智能科技股份有限公司 | Microminiature LED transfer device, transfer method and bearing frame |
| CN115188871B (en) * | 2022-09-13 | 2022-12-09 | 昆山鸿仕达智能科技股份有限公司 | Microminiature LED transferring device and transferring method |
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