JPH07142168A - Manufacture of organic el element - Google Patents
Manufacture of organic el elementInfo
- Publication number
- JPH07142168A JPH07142168A JP5286370A JP28637093A JPH07142168A JP H07142168 A JPH07142168 A JP H07142168A JP 5286370 A JP5286370 A JP 5286370A JP 28637093 A JP28637093 A JP 28637093A JP H07142168 A JPH07142168 A JP H07142168A
- Authority
- JP
- Japan
- Prior art keywords
- anode
- organic
- film
- ito film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000007789 sealing Methods 0.000 claims abstract description 13
- 238000004381 surface treatment Methods 0.000 claims abstract description 13
- 239000011368 organic material Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 abstract description 6
- 239000001301 oxygen Substances 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 4
- 230000004075 alteration Effects 0.000 abstract description 2
- 238000004020 luminiscence type Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 37
- 239000010410 layer Substances 0.000 description 37
- 230000005525 hole transport Effects 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は有機ＥＬ素子の製造方法
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an organic EL device.
【０００２】[0002]
【従来の技術】ＥＬ（エレクトロルミネッセンス）素子
とは、固体蛍光性物質の電界発光またはエレクトロルミ
ネッセンスといわれる現象を利用した発光デバイスであ
り、現在無機系材料を発光体として用いた無機ＥＬ素子
が実用化され、液晶ディスプレイ用バックライト、フラ
ットパネル・ディスプレイ等へ応用されている。しかし
ながら、無機ＥＬ素子は、素子を発光させるために高電
圧（〜２００Ｖ）が必要であること、カラー化が困難で
あること等の欠点がある。一方、有機系材料を用いたＥ
Ｌ素子に関する研究も古くから行われていたが、無機Ｅ
Ｌデバイスに比べ著しく性能が劣っていたため、本格的
な実用化研究にまでは至っていなかった。しかし、1987
年にTangらにより提案された、有機物層をホール輸送層
および発光層の２層より構成した有機薄膜ＥＬ素子は、
直流で作動し１０Ｖ以下の低電圧で１０００cd/m2 以上
の高輝度発光を実現し注目を集め、近年同様の有機薄膜
積層型のＥＬ素子の実用化に向けての研究が盛んに行な
われている（C.W.Tang and S.A.VanSlyke:Appl.Phys.Le
tt.,51(1987)913 ）。2. Description of the Related Art An EL (electroluminescence) element is a light-emitting device that utilizes a phenomenon called electroluminescence or electroluminescence of a solid fluorescent substance. Currently, an inorganic EL element using an inorganic material as a light emitter is practically used. It has been applied to LCD backlights, flat panel displays, etc. However, the inorganic EL element has drawbacks such as a high voltage (up to 200 V) required to emit light from the element and difficulty in colorization. On the other hand, E using an organic material
Research on L-elements has been conducted for a long time, but inorganic E
Since the performance was significantly inferior to that of the L device, full-scale practical research was not reached. But 1987
The organic thin-film EL device proposed by Tang et al. In which the organic material layer is composed of two layers, a hole transport layer and a light emitting layer, is
It is operated by direct current and has achieved high brightness emission of 1000 cd / m 2 or more at a low voltage of 10 V or less and has attracted attention. In recent years, much research has been conducted toward the practical application of a similar organic thin film layered EL device. (CWTang and SAVanSlyke: Appl.Phys.Le
tt., 51 (1987) 913).
【０００３】上記のような有機ＥＬ素子においては、発
光層材料や層構造を変化させることにより無機ＥＬ素子
では難しかった青色発光を含む種々の発光波長を有する
物が得られており、各種発光デバイスやフルカラーディ
スプレイへの応用が期待されているが、無機ＥＬ素子に
比べ経時劣化が著しく、実用化レベルの素子は得られて
いない。In the organic EL element as described above, various light emitting devices having various emission wavelengths including blue light emission, which is difficult for the inorganic EL element, have been obtained by changing the light emitting layer material and layer structure. Although it is expected to be applied to a full-color display or a full-color display, deterioration over time is remarkable as compared with an inorganic EL element, and a practical level element has not been obtained.
【０００４】上記のような有機ＥＬ素子の実用化に向け
ての発光特性の改善例の一つとして、陽極であるＩＴＯ
膜に二次的処理としてプラズマ表面処理を行うことによ
り、発光しきい値電圧が低下し、また発光特性の経時劣
化が抑制されることが報告されている（例えば、電子情
報通信学会春季大会講演論文集，5-347,1993年）。As one of the examples of improving the light emitting characteristics toward the practical use of the organic EL device as described above, ITO as an anode is used.
It has been reported that the plasma surface treatment of the film as a secondary treatment lowers the emission threshold voltage and suppresses the deterioration of the emission characteristics over time (eg, IEICE Spring Conference Lecture). Proceedings, 5-347, 1993).
【０００５】[0005]
【発明が解決しようとする課題】しかし、上記のような
有機ＥＬ素子においては、発光面中に黒点状の未発光部
分が出現し均一な面発光が得られないという問題点があ
る。本発明の目的は、上記のような問題点を改良した有
機ＥＬ素子を製造するための製造方法を提供しようとす
るものである。However, in the organic EL device as described above, there is a problem in that a black dot-like non-light emitting portion appears in the light emitting surface and uniform surface emission cannot be obtained. An object of the present invention is to provide a manufacturing method for manufacturing an organic EL device in which the above problems are improved.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するため
に本発明は、第１発明として、基板上に、陽極、有機物
層、陰極を順次積層してなる有機ＥＬ素子の製造方法に
おいて、陽極のプラズマ表面処理を行った後、前記陽極
を大気中にさらすことなく、次いで前記陽極上に有機物
層を形成する有機ＥＬ素子の製造方法とした。In order to achieve the above object, the present invention provides, as a first invention, a method for producing an organic EL device comprising a substrate, on which an anode, an organic material layer and a cathode are sequentially laminated. After the plasma surface treatment was performed, the organic EL device was manufactured by forming an organic material layer on the anode without exposing the anode to the atmosphere.
【０００７】第２発明として、基板上に、陽極、有機物
層、陰極、封止膜を順次積層してなる有機ＥＬ素子の製
造方法において、前記基板上に陽極、有機物層、陰極を
形成した後、これら素子を大気中にさらすことなく封止
膜を形成する有機ＥＬ素子の製造方法とした。In a second aspect of the present invention, there is provided a method for manufacturing an organic EL device, which comprises sequentially laminating an anode, an organic material layer, a cathode and a sealing film on a substrate, after forming the anode, the organic material layer and the cathode on the substrate. The method for producing an organic EL element is to form a sealing film without exposing these elements to the atmosphere.
【０００８】[0008]
【作用】第１発明では、基板上の陽極であるＩＴＯ膜を
プラズマ表面処理した後、陽極を大気中にさらすことな
く、引き続きＩＴＯ膜上に有機物層としてのホール輸送
層を形成し、プラズマ表面処理によって洗浄されたＩＴ
Ｏ膜表面を再び汚すことなく有機物層としての発光層を
形成して大気中の酸素や湿気による素子変化を防止し
た。In the first aspect of the present invention, after the ITO film which is the anode on the substrate is subjected to the plasma surface treatment, the hole transport layer as the organic material layer is continuously formed on the ITO film without exposing the anode to the atmosphere, and the plasma surface is formed. IT cleaned by processing
A light emitting layer as an organic material layer was formed without soiling the surface of the O film again to prevent element change due to oxygen and humidity in the atmosphere.
【０００９】第２発明では、基板上に陽極、有機物層、
陰極を形成した後、これら素子を大気中にさらすことな
く封止膜を形成することで、素子の変化を防止し未発光
部分の少ない有機ＥＬ素子を作製することができる。In the second invention, an anode, an organic layer, and
After forming the cathode, by forming the sealing film without exposing these elements to the atmosphere, it is possible to prevent the elements from changing and to fabricate an organic EL element with a small unlighted portion.
【００１０】[0010]
【実施例】以下、実施例として示した図１に従い本発明
を詳細に述べる。１はガラス基板、２は陽極としてのＩ
ＴＯ膜であり、SnO2:Sb, ZnO2:Al等の透明電極よりな
る。３は有機物層としてのホール輸送層であり、正孔移
動度が大で、成膜性がよく、透明であるものが望まし
く、例えば、特開平４−１２９１９１号、特開平４−１
３２１８９号、特開平４−２５５６９２号に記載の化合
物を用いることができる。４は有機物層としての発光層
であり、可視領域に蛍光を有し成膜性のよい任意の蛍光
体を用いることができ、例えば、特開平４−１２９１９
１号、特開平４−１３２１８９号、特開平４−２５５６
９２号に記載の化合物を用いることができる。５は陰極
であり、仕事関数の小さい金属、合金を用いることが望
ましく、Mg, MgAg合金等が好適な材料である。６は封止
層で、上記の有機物層および電極の酸化防止や防湿を目
的とし、SiO2, SiO, GeO等を用いることができる。The present invention will be described in detail below with reference to FIG. 1 shown as an embodiment. 1 is a glass substrate, 2 is I as an anode
The TO film is a transparent electrode such as SnO 2 : Sb or ZnO 2 : Al. Reference numeral 3 denotes a hole transport layer as an organic material layer, which has a high hole mobility, good film-forming property, and is transparent, and is preferably, for example, JP-A-4-129191 and JP-A-4-1-1.
The compounds described in JP-A No. 32189 and JP-A No. 4-255692 can be used. Reference numeral 4 denotes a light emitting layer as an organic layer, and any phosphor having fluorescence in the visible region and having good film-forming property can be used, for example, JP-A-4-12919.
1, JP-A-4-132189, JP-A-4-2556.
The compounds described in No. 92 can be used. Reference numeral 5 denotes a cathode, which is preferably a metal or alloy having a small work function, and Mg, MgAg alloy, or the like is a suitable material. Reference numeral 6 denotes a sealing layer, which can be made of SiO 2 , SiO, GeO or the like for the purpose of preventing oxidation and moisture prevention of the above-mentioned organic material layer and electrode.
【００１１】なお、本発明により製造される有機ＥＬ素
子の構造は、上記のようなホール輸送層３と発光層４と
の２層型素子に限定されるものではなく、発光層と電子
輸送層とからなる型の２層構造やホール輸送層と発光層
と電子輸送層とからなる型の３層構造等であってもよ
い。市販のＩＴＯ膜付きガラス基板（日本板硝子製、P1
1OE-H-PX）のＩＴＯ膜を王水によりエッチングし、陽極
パターンを形成した後、洗剤（ユーアイ化成株式会社、
ホワイト7-L ）で１時間超音波洗浄し、続いてイオン交
換水で１時間超音波洗浄、続いてアセトンで３０分超音
波洗浄、続いてエタノールで１時間超音波洗浄、続いて
沸騰エタノール中に５分間浸漬し、自然乾燥する。洗浄
後の基板を成膜装置内の基板ホルダーにセットし、チャ
ンバー内を１×１０-6Torr以下の真空度まで減圧する。
続いてチャンバー内に３×１０-2TorrになるまでArガス
を導入し、５００ワットの条件で３０秒間高周波電圧を
印加しＩＴＯ膜基板を逆スパッタリングすることによ
り、ＩＴＯ膜のプラズマ表面処理を行う。The structure of the organic EL device manufactured according to the present invention is not limited to the two-layer device having the hole transport layer 3 and the light emitting layer 4 as described above, but may be a light emitting layer and an electron transport layer. And a three-layer structure of a type including a hole transport layer, a light emitting layer, and an electron transport layer. Commercially available glass substrate with ITO film (Nippon Sheet Glass, P1
1OE-H-PX) ITO film is etched with aqua regia to form an anode pattern, and then the detergent (UAI Kasei Co., Ltd.,
White 7-L) for 1 hour, followed by deionized water for 1 hour, followed by acetone for 30 minutes, followed by ethanol for 1 hour and then in boiling ethanol. Soak for 5 minutes and let it air dry. The cleaned substrate is set on the substrate holder in the film forming apparatus, and the inside of the chamber is depressurized to a vacuum degree of 1 × 10 −6 Torr or less.
Subsequently, Ar gas was introduced into the chamber until the pressure reached 3 × 10 −2 Torr, and a high frequency voltage was applied for 30 seconds under the condition of 500 watts to reverse-sputter the ITO film substrate to perform plasma surface treatment of the ITO film. .
【００１２】続いてチャンバー内を再び１×１０-6Torr
以下の真空度まで減圧した後、N,N'-シ゛フェニル-N,N'-ヒ゛ス(3
-メチルフェニル)-1,1'-シ゛フェニル-4,4'-シ゛アミンを蒸着源とし、抵抗
加熱方式の真空蒸着により約５００Å成膜し、ホール輸
送層３を形成する。この時の蒸着速度は約３Å/sとす
る。続いてトリス(8-ヒト゛ロキシキノリン)アルミニウムを蒸着源とし、抵
抗加熱方式の真空蒸着により約５００Å成膜し、発光層
４を形成する。この時の蒸着速度は約２Å/sとする。続
いてMgおよびAgを蒸着源とし、抵抗加熱方式の真空蒸着
により共蒸着を行い約２３００Å成膜し、陰極５を形成
する。この時MgとAgの蒸着速度の比は１０：１とし、ま
た蒸着速度は約５Å/sとする。最後に、SiO を蒸着源と
し抵抗加熱方式の真空蒸着により約５０００Å成膜し、
封止膜６を形成した。Subsequently, the inside of the chamber is again regenerated to 1 × 10 -6 Torr.
After decompressing to the following vacuum degree, N, N'-diphenyl-N, N'-bis (3
-Methylphenyl) -1,1'-diphenyl-4,4'-diamine is used as a vapor deposition source to form a hole transport layer 3 by vacuum vapor deposition of a resistance heating system to form a film of about 500 liters. The deposition rate at this time is about 3Å / s. Subsequently, tris (8-human oxyquinoline) aluminum is used as a vapor deposition source to form a light emitting layer 4 by vacuum vapor deposition of a resistance heating system to form a film of about 500 liters. The deposition rate at this time is about 2Å / s. Then, using Mg and Ag as vapor deposition sources, co-evaporation is performed by vacuum vapor deposition of a resistance heating method to form a film of about 2300 Å to form the cathode 5. At this time, the ratio of the deposition rate of Mg to Ag is 10: 1, and the deposition rate is about 5Å / s. Finally, using SiO 2 as a vapor deposition source, a film of about 5000 Å is formed by resistance heating vacuum deposition,
The sealing film 6 was formed.
【００１３】以上のような工程で、ＩＴＯ膜のプラズマ
表面クリーニングから封止膜６の形成まで、真空状態を
破ることなく有機ＥＬ素子を製作する。こうして得られ
た有機ＥＬ素子に、ＩＴＯ膜を陽極２、Mg/Ag 合金を陰
極５として、直流１５Ｖを印加したところ、緑色の発光
が得られ、発光面中の未発光部は非常に少なく、発光面
の平均輝度は１２００cd/m2 であった。 （比較例１）ＩＴＯ膜の陽極２のプラズマ表面処理を行
った後、いったんＩＴＯ膜付きガラス基板１を取り出
し、大気中で３０分間放置した以外は、実施例と同様に
有機ＥＬ素子を作製し、実施例と同様に直流１５Ｖを印
加したところ緑色の発光が得られたが、発光面中には未
発光部分が多く存在し、発光面の平均輝度は７４０cd/m
2 と実施例に比べ低いものであった。Through the above steps, the plasma of the ITO film is
From the surface cleaning to the formation of the sealing film 6, keep the vacuum state
Manufacture organic EL devices without breaking them. Thus obtained
For the organic EL device, the ITO film is used as the anode 2 and the Mg / Ag alloy is used as the shadow.
Applying 15V DC as pole 5 causes green light emission.
Is obtained, and there are very few non-light emitting parts in the light emitting surface.
Average brightness is 1200 cd / m2 Met. (Comparative Example 1) Plasma surface treatment of the anode 2 of the ITO film was performed.
Then, take out the glass substrate 1 with the ITO film once
However, as in the example, except that it was left in the atmosphere for 30 minutes.
An organic EL element was prepared and a DC voltage of 15V was applied in the same manner as in the example.
When added, green light emission was obtained, but it was not found in the light emitting surface.
There are many light emitting parts, and the average brightness of the light emitting surface is 740 cd / m
2 Was lower than that of the example.
【００１４】前記実施例および比較例１で用いたものと
同一のＩＴＯ膜付きガラス基板を、実施例と同条件で超
音波洗浄、沸騰エタノール中に浸漬後自然乾燥したもの
について、ＡＥＳ分析装置を用いてＩＴＯ膜面の組成分
析を行ったところ、ＩＴＯ膜表面の炭素量は３２．８％
であったが、同装置内で上記実施例と同条件でＩＴＯ膜
を逆スパッタリングすることによりプラズマ表面処理を
行った後では、炭素量は３．６％に減少しており、プラ
ズマ表面処理によるＩＴＯ膜表面のクリーニング効果が
確認された。The same glass substrate with an ITO film as that used in the above-mentioned Examples and Comparative Example 1 was ultrasonically cleaned under the same conditions as those in Examples, and immersed in boiling ethanol and then naturally dried. When the composition of the ITO film surface was analyzed using the above, the amount of carbon on the ITO film surface was 32.8%.
However, after performing the plasma surface treatment by reverse-sputtering the ITO film in the same apparatus under the same conditions as in the above example, the amount of carbon was reduced to 3.6%. The cleaning effect of the ITO film surface was confirmed.
【００１５】しかしながら、この後ＩＴＯ膜付きガラス
基板をＡＥＳ分析装置より取り出し大気中で３０分放置
した後で、同様にＩＴＯ膜面の組成分析を行ったとこ
ろ、炭素量は３０．２％とプラズマ表面処理を行う以前
と同レベルに増加していた。このことより、本発明によ
り、プラズマ表面処理によって洗浄されたＩＴＯ膜表面
を再び汚すことなく有機ＥＬ素子を作製することがで
き、未発光部分の少ない有機ＥＬ素子を作製することが
できたと考えられる。 （比較例２）基板上に陽極２、有機物層３、４及び陰極
５を形成した後、いったん素子を取り出し、大気中で３
０分間放置した比較例を作り、実施例と同様に直流１５
Ｖを印加したところ緑色の発光が得られた。しかし、実
施例に比べ発光面中の未発光部分が多く、発光面の平均
輝度は１０５０cd/m2 と実施例に比べ低かった。However, after this, the glass substrate with the ITO film was taken out from the AES analyzer and allowed to stand in the atmosphere for 30 minutes. Then, the composition of the ITO film surface was similarly analyzed. It increased to the same level as before the surface treatment. From this, it is considered that the present invention makes it possible to fabricate an organic EL element without soiling the surface of the ITO film cleaned by the plasma surface treatment again, and to fabricate an organic EL element having a small amount of unlighted portion. . (Comparative Example 2) After the anode 2, the organic material layers 3 and 4 and the cathode 5 were formed on the substrate, the device was once taken out, and then 3 in the atmosphere.
A comparative example was left for 0 minutes, and a direct current of 15
When V was applied, green light emission was obtained. However, compared to the examples, there were many non-light emitting portions on the light emitting surface, and the average luminance of the light emitting surface was 1050 cd / m 2, which was lower than that of the examples.
【００１６】大気中の酸素や湿度は有機ＥＬ素子の有機
物層、界面、電極の変質をもたらす原因と考えられてお
り、本発明によって、前記実施例のように陰極５を形成
した後、素子を大気中にさらすことなく封止膜６を形成
することによって、大気中の酸素や湿度による素子の変
質を防止でき、未発光部分の少ない有機ＥＬ素子を作製
することができたと考えられる。Oxygen and humidity in the atmosphere are considered to be the cause of deterioration of the organic material layer, interface, and electrode of the organic EL element. According to the present invention, the element is formed after the cathode 5 is formed as in the above-mentioned embodiment. It is considered that by forming the sealing film 6 without exposing it to the atmosphere, alteration of the element due to oxygen and humidity in the atmosphere can be prevented, and an organic EL element with a small amount of unlighted portion could be manufactured.
【００１７】[0017]
【発明の効果】上記のように、基板上のＩＴＯ膜をプラ
ズマ表面処理した後、基板を大気中にさらすことなく、
引き続きＩＴＯ膜上に有機物層を形成するため、プラズ
マ表面処理により洗浄されたＩＴＯ膜表面を再び汚すこ
となく有機ＥＬ素子を作製することができ、さらに、陰
極を形成した後、素子を大気中にさらすことなく封止膜
を形成することによって、大気中の酸素や湿度による素
子の変質を防止でき未発光部分の少ない有機ＥＬ素子を
作製することができる。As described above, after subjecting the ITO film on the substrate to the plasma surface treatment, without exposing the substrate to the atmosphere,
Since an organic material layer is subsequently formed on the ITO film, an organic EL device can be produced without recontaminating the cleaned ITO film surface by the plasma surface treatment. Further, after forming the cathode, the device is exposed to the atmosphere. By forming the sealing film without exposing the organic EL device to the organic EL device, it is possible to prevent deterioration of the device due to oxygen and humidity in the atmosphere and reduce the non-light emitting portion.
【図１】本発明方法により製造される有機ＥＬ素子の断
面図FIG. 1 is a sectional view of an organic EL device manufactured by the method of the present invention.
１ ガラス基板 ２ 陽極 ３ 有機物層（ホール輸送層） ４ 有機物層（発光層） ５ 陰極 ６ 封止膜 1 Glass Substrate 2 Anode 3 Organic Material Layer (Hole Transport Layer) 4 Organic Material Layer (Light Emitting Layer) 5 Cathode 6 Sealing Film
Claims (2)
積層してなる有機ＥＬ素子の製造方法において、陽極の
プラズマ表面処理を行った後、前記陽極を大気中にさら
すことなく、次いで前記陽極上に有機物層を形成するこ
とを特徴とする有機ＥＬ素子の製造方法。1. A method of manufacturing an organic EL device comprising a substrate, an anode, an organic material layer, and a cathode, which are sequentially laminated on each other. After plasma surface treatment of the anode, the anode is then exposed to the atmosphere without being exposed to the air. A method of manufacturing an organic EL device, comprising forming an organic material layer on the anode.
膜を順次積層してなる有機ＥＬ素子の製造方法におい
て、前記基板上に陽極、有機物層、陰極を形成した後、
これら素子を大気中にさらすことなく封止膜を形成する
ことを特徴とする有機ＥＬ素子の製造方法。2. A method for manufacturing an organic EL device, which comprises sequentially laminating an anode, an organic material layer, a cathode and a sealing film on a substrate, after forming the anode, the organic material layer and the cathode on the substrate,
A method for manufacturing an organic EL device, which comprises forming a sealing film without exposing these devices to the atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28637093A JP3531680B2 (en) | 1993-11-16 | 1993-11-16 | Manufacturing method of organic EL device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28637093A JP3531680B2 (en) | 1993-11-16 | 1993-11-16 | Manufacturing method of organic EL device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07142168A true JPH07142168A (en) | 1995-06-02 |
| JP3531680B2 JP3531680B2 (en) | 2004-05-31 |
Family
ID=17703515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28637093A Expired - Lifetime JP3531680B2 (en) | 1993-11-16 | 1993-11-16 | Manufacturing method of organic EL device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3531680B2 (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10255972A (en) * | 1997-03-10 | 1998-09-25 | Idemitsu Kosan Co Ltd | Manufacture of organic electroluminescent element, and its manufacturing device |
| JPH10302965A (en) * | 1997-05-01 | 1998-11-13 | Minolta Co Ltd | Organic electroluminescent element and it manufacture |
| US6060826A (en) * | 1997-03-19 | 2000-05-09 | Minolta Co., Ltd. | Organic electroluminescent element having an excimer light irradiated positive electrode and method of manufacturing the same |
| US6106352A (en) * | 1998-03-18 | 2000-08-22 | Sanyo Electric Co., Ltd. | Method for fabrication of organic electroluminescent device |
| WO2000072637A1 (en) * | 1998-03-09 | 2000-11-30 | Tdk Corporation | Organic el color display |
| US6333065B1 (en) | 1997-07-25 | 2001-12-25 | Tdk Corporation | Process for the production of an organic electroluminescent device |
| US6395409B2 (en) | 1997-09-29 | 2002-05-28 | Minolta Co., Ltd. | Organic electroluminescent element |
| US6406802B1 (en) | 1999-05-27 | 2002-06-18 | Tdk Corporation | Organic electroluminescent color display |
| JP2003077655A (en) * | 2001-09-04 | 2003-03-14 | Canon Inc | Organic electroluminescent element and manufacturing method therefor |
| WO2008078691A1 (en) * | 2006-12-22 | 2008-07-03 | Tokyo Electron Limited | Substrate treatment apparatus and cleaning method |
| US7452257B2 (en) | 2002-12-27 | 2008-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a display device |
| JP2010182637A (en) * | 2009-02-09 | 2010-08-19 | Fujifilm Corp | Organic electroluminescent element manufacturing method and organic electroluminescent element |
-
1993
- 1993-11-16 JP JP28637093A patent/JP3531680B2/en not_active Expired - Lifetime
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10255972A (en) * | 1997-03-10 | 1998-09-25 | Idemitsu Kosan Co Ltd | Manufacture of organic electroluminescent element, and its manufacturing device |
| US6060826A (en) * | 1997-03-19 | 2000-05-09 | Minolta Co., Ltd. | Organic electroluminescent element having an excimer light irradiated positive electrode and method of manufacturing the same |
| JPH10302965A (en) * | 1997-05-01 | 1998-11-13 | Minolta Co Ltd | Organic electroluminescent element and it manufacture |
| US6908638B2 (en) | 1997-05-01 | 2005-06-21 | Minolta Co., Ltd. | Organic electroluminescent element and method of manufacturing same |
| US6333065B1 (en) | 1997-07-25 | 2001-12-25 | Tdk Corporation | Process for the production of an organic electroluminescent device |
| US6395409B2 (en) | 1997-09-29 | 2002-05-28 | Minolta Co., Ltd. | Organic electroluminescent element |
| WO2000072637A1 (en) * | 1998-03-09 | 2000-11-30 | Tdk Corporation | Organic el color display |
| US6106352A (en) * | 1998-03-18 | 2000-08-22 | Sanyo Electric Co., Ltd. | Method for fabrication of organic electroluminescent device |
| US6406802B1 (en) | 1999-05-27 | 2002-06-18 | Tdk Corporation | Organic electroluminescent color display |
| JP2003077655A (en) * | 2001-09-04 | 2003-03-14 | Canon Inc | Organic electroluminescent element and manufacturing method therefor |
| US7452257B2 (en) | 2002-12-27 | 2008-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a display device |
| WO2008078691A1 (en) * | 2006-12-22 | 2008-07-03 | Tokyo Electron Limited | Substrate treatment apparatus and cleaning method |
| JP2008159381A (en) * | 2006-12-22 | 2008-07-10 | Tokyo Electron Ltd | Substrate treatment device and cleaning method |
| JP2010182637A (en) * | 2009-02-09 | 2010-08-19 | Fujifilm Corp | Organic electroluminescent element manufacturing method and organic electroluminescent element |
| US8455272B2 (en) | 2009-02-09 | 2013-06-04 | Udc Ireland Limited | Method for producing organic electroluminescence element and organic electroluminescence element |
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