JPH07123348B2 - Load sharing status monitor for multiple devices - Google Patents
Load sharing status monitor for multiple devicesInfo
- Publication number
- JPH07123348B2 JPH07123348B2 JP17436586A JP17436586A JPH07123348B2 JP H07123348 B2 JPH07123348 B2 JP H07123348B2 JP 17436586 A JP17436586 A JP 17436586A JP 17436586 A JP17436586 A JP 17436586A JP H07123348 B2 JPH07123348 B2 JP H07123348B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- elements
- signal
- signals
- temperature sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Testing Of Individual Semiconductor Devices (AREA)
- Power Conversion In General (AREA)
Description
【発明の詳細な説明】 〔発明の目的〕 (産業上の利用分野) 本発明は、複数の素子の負荷分担状態監視装置に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION Object of the Invention (Field of Industrial Application) The present invention relates to a load sharing state monitoring device for a plurality of elements.
水力発電の制御装置に関連するサイリスタ励磁装置や周
波数変換器などにおいては、高電圧・大電流形のサイリ
スタあるいはパワートランジスタ等の半導体電力素子の
複数を直列又は並列に接続して使用している。それらの
素子は接続当初には各素子による電圧・電流の分担が平
等になるように調整可能である。しかしながら、各素子
は製造上のばらつきによって微妙に異なる特性を有し、
また、実機内取付部位によって冷却も多少異なるので当
初各素子による分担が平等となるようにしても、長時間
にわたる運転により特定の素子が劣化する。さらに外部
から加えられる電気的・機械的ストレス等により前記特
定の素子の劣化が進行し、そのような劣化により破壊さ
れるのが避けられない。しかも、複数の素子中の少なく
とも1つの劣化が進むと、前記分担における平等状態が
崩れ、その素子の劣化がさらに促進される。少なくとも
1つの素子劣化が極度に進むと、それが装置全体に悪影
響を及ぼすのが避けられない。In a thyristor excitation device, a frequency converter, etc. related to a hydraulic power generation control device, a plurality of semiconductor power devices such as high voltage / large current type thyristors or power transistors are connected in series or in parallel. These elements can be adjusted so that the voltage and current are equally shared by each element at the beginning of connection. However, each element has slightly different characteristics due to manufacturing variations,
Further, since the cooling is slightly different depending on the mounting portion in the actual machine, even if the respective elements are initially made equal in share, a particular element is deteriorated due to long-time operation. Further, deterioration of the specific element is promoted by electrical / mechanical stress applied from the outside, and it is unavoidable that the specific element is destroyed by such deterioration. Moreover, when at least one of the plurality of elements is deteriorated, the equal state in the sharing is broken, and the deterioration of the element is further promoted. When the deterioration of at least one element is extremely advanced, it is inevitable that it adversely affects the entire device.
(発明が解決しようとする問題点) 前記各素子が異常な状態にあるか否かを判断するために
は、各素子の分担電圧・分担電流を知得する必要があ
る。そのためには、それらの電圧・電流を直接電圧・電
流として計測すればよい。しかしながら、それらの電圧
・電流は共に大きな値のものであるため、計測機器が大
形で高価なものとなるのが避けられない。電圧・電流
は、それらに応じた値を示す他の物理量から間接的に検
出できる。そのような間接的な検出器として電圧・電流
に応じた値を示す温度に着目した温度ヒューズ等の温度
検出器があったが、その温度検出器には、周囲温度の影
響を受けるという問題点及び検出温度の誤差が大きいと
いう問題点等の各種の問題点があった。また、温度検出
器としてバイメタル、サーモスタット及び測温抵抗体等
による温度継電器もあるが、その継電器も温度検出点が
固定されており、そのため周囲温度の影響を受けやす
く、精度の良い温度検出が行えないという問題点があっ
た。(Problems to be Solved by the Invention) In order to determine whether each element is in an abnormal state, it is necessary to know the shared voltage / shared current of each element. For that purpose, those voltages / currents may be directly measured as voltages / currents. However, since both the voltage and the current have large values, it is unavoidable that the measuring instrument becomes large and expensive. The voltage / current can be indirectly detected from other physical quantities showing values corresponding to them. As such an indirect detector, there was a temperature detector such as a temperature fuse that focuses on the temperature showing a value according to the voltage and current, but the problem is that the temperature detector is affected by the ambient temperature. In addition, there are various problems such as a large error in the detected temperature. Also, there are temperature relays such as bimetal, thermostat and resistance temperature detector as temperature detectors, but the temperature detection points of these relays are also fixed, so they are easily affected by the ambient temperature and accurate temperature detection can be performed. There was a problem that it did not exist.
本発明の目的は、複数の素子の負荷分担状態を監視して
それらの中の劣化した素子を発見可能とした装置を提供
することにある。It is an object of the present invention to provide an apparatus capable of monitoring a load sharing state of a plurality of elements and detecting a deteriorated element among them.
(問題点を解決するための手段) 本発明の負荷分担状態監視装置は、負荷分担する複数の
素子のそれぞれの温度をそれらの素子からの熱放射に基
づいて検出する温度センサーと、それらの温度センサー
での検出信号に基づいて前記複数の素子の温度の平均値
および標準偏差からなる基準信号を生成する基準信号生
成手段と、前記各検出信号と前記基準信号とをそれぞれ
比較して各素子の温度が前記平均値から前記標準偏差の
所定の定数倍よりも離れているときに異常信号を選択的
に出力する比較手段とを備えたものとして構成される。(Means for Solving Problems) A load sharing state monitoring device of the present invention is a temperature sensor that detects the temperature of each of a plurality of elements that share a load based on heat radiation from those elements, and the temperature of those sensors. A reference signal generating means for generating a reference signal consisting of an average value and a standard deviation of the temperatures of the plurality of elements based on the detection signal of the sensor, and comparing each of the detection signals and the reference signal with each other. And a comparing means for selectively outputting an abnormal signal when the temperature is away from the average value by a predetermined constant multiple of the standard deviation.
(作用) 負荷分担する複数の素子のそれぞれの温度が温度センサ
ーによって離れた位置から検出される。それらの検出信
号に基づいて基準信号が基準信号生成手段によって生成
される。その基準信号は前記温度センサーでの複数の検
出信号とそれぞれ個別に比較される。ある検出信号と基
準信号との比較結果が異常な場合、例えば、比較した信
号同士の差が予め定めた設定値よりも大きいときには、
比較手段から異常信号が出力され、その検出信号に対応
する素子の異常が知得される。(Operation) The temperature of each of the plurality of elements that share the load is detected by the temperature sensor from a remote position. A reference signal is generated by the reference signal generation means based on those detection signals. The reference signal is individually compared with a plurality of detection signals from the temperature sensor. When the comparison result of a certain detection signal and the reference signal is abnormal, for example, when the difference between the compared signals is larger than a predetermined set value,
An abnormality signal is output from the comparison means, and the abnormality of the element corresponding to the detection signal is known.
(実施例) 第1図は、本発明の第1実施例の監視装置を示すブロッ
ク図である。同図において、1,1,…は温度計測対象とし
てのサイリスタ等の電力半導体素子を示す。2,2,…は半
導体素子1,1,…の温度を計測するための温度センサーで
あり、半導体素子1,1,…と同数だけ設けられている。温
度センサー2としては、半導体素子からの熱放射をその
放射量に応じた電気信号に変換する各種の素子、例え
ば、赤外線センサーを用いることができる。温度センサ
ー2,2,…の次段には温度補正回路3,3,…及びA/D変換器
4,4,…を介してデジタル計算機5が接続されている。温
度補正回路3は、温度センサー2からの出力を補正し
て、温度センサー2からの出力を温度に対してリニアと
するためのもので、温度センサー2の特性曲線を修正す
ると共にセンサー個々の特性のばらつきを修正する。デ
ジタル計算機5は以下のように基準信号生成手段と比較
手段を備えたものとして機能する。即ち、A/D変換器4,
4,…からの出力に基づいて一定時間毎の各時刻において
それらの全出力の平均値及び標準偏差(標準信号)を求
める。各A/D変換器4,4,…からの個別の出力と平均値と
の偏差を求める。それらの各偏差と標準偏差とを比較す
る。その比較の結果、前者の信号のうちの1つにでも後
者の信号よりも標準偏差に定数(例えば1/4)を掛けた
設定値以上に大きいものがある場合には異常信号を出力
する。A/D変換器4,4,…から時間的に連続してデジタル
計算機5に入力される信号を、一定時間毎に平均し、そ
れらの平均信号に基づいて以上に述べたような信号処理
を行うこともできる。(Embodiment) FIG. 1 is a block diagram showing a monitoring device according to a first embodiment of the present invention. In the figure, 1, 1, ... Denote power semiconductor elements such as thyristors as temperature measurement targets. Reference numerals 2, 2, ... Are temperature sensors for measuring the temperatures of the semiconductor elements 1, 1 ,. As the temperature sensor 2, various elements that convert heat radiation from a semiconductor element into an electric signal according to the radiation amount, for example, an infrared sensor can be used. Next to the temperature sensors 2, 2, ..., Temperature compensation circuits 3, 3, ... And A / D converter
The digital computer 5 is connected via 4, 4, .... The temperature correction circuit 3 corrects the output from the temperature sensor 2 so that the output from the temperature sensor 2 is linear with respect to the temperature. The temperature correction circuit 3 corrects the characteristic curve of the temperature sensor 2 and the characteristics of each sensor. Correct the variation of. The digital computer 5 functions as having a reference signal generating means and a comparing means as described below. That is, the A / D converter 4,
Based on the outputs from 4, ..., The average value and standard deviation (standard signal) of all the outputs are obtained at each fixed time. The deviation between the individual output from each A / D converter 4, 4, ... And the average value is obtained. Compare each of those deviations with the standard deviation. As a result of the comparison, if one of the former signals is larger than the latter signal by more than the set value obtained by multiplying the standard deviation by a constant (for example, 1/4), an abnormal signal is output. The signals continuously input to the digital computer 5 from the A / D converters 4, 4, ... Are averaged at regular time intervals, and the signal processing as described above is performed based on the averaged signals. You can also do it.
また、デジタル計算機5に以下の機能を持たせることも
できる。即ち、A/D変換器4,4,…からの出力に基づいて
一定時間毎の各時刻においてそれらの全出力の平均値
(標準信号)を求める。各A/D変換器4,4,…からの個別
の出力とその平均値とを比較する。その比較の結果、前
者の信号のうちの1つにでも後者の信号よりも予め定め
た設定値よりも大きい場合には異常信号を出力する。さ
らに、デジタル計算機5に以下の機能を持たせることが
できる。即ち、各A/D変換器4,4,…からの個別の出力と
前に述べた2種類の設定値と比較してそれらの差信号を
求める。それらの差信号を時間で微分する。その微分し
た値が予め定めた値又は標準偏差から求めた値よりも大
きい場合に異常信号を出力する。Further, the digital computer 5 can be provided with the following functions. That is, the average value (standard signal) of all outputs of the A / D converters 4, 4, ... The individual output from each A / D converter 4, 4, ... Is compared with its average value. As a result of the comparison, if even one of the former signals is larger than the latter signal by a predetermined set value, an abnormal signal is output. Furthermore, the digital computer 5 can be provided with the following functions. That is, the individual output from each A / D converter 4, 4, ... Is compared with the above-mentioned two kinds of set values to obtain their difference signals. Differentiate their difference signals over time. An abnormal signal is output when the differentiated value is larger than a predetermined value or a value obtained from the standard deviation.
以上に述べた異常信号には2種類のものがあり、1つは
半導体素子1,1,…のいずれかが異常状態にあることを示
す警報信号6であり、他はどの半導体素子1,1,…が異常
状態にあるかを示す個別異常信号7,7,…である。警報信
号6は個別異常信号7,7,…の論理和として得られる。個
別異常信号7,7,…は次段のCRT8に伝えられ、そのCRT8に
どの半導体素子1,1,…に異常があるかが表示される。There are two kinds of abnormal signals described above, one is an alarm signal 6 indicating that one of the semiconductor elements 1, 1, ... Is in an abnormal state, and the other is which semiconductor element 1,1. Are individual abnormal signals 7, 7, ... Indicating whether or not is in an abnormal state. The alarm signal 6 is obtained as a logical sum of the individual abnormality signals 7, 7, .... The individual abnormality signals 7, 7, ... Are transmitted to the CRT 8 in the next stage, and which CRT 8 indicates which semiconductor element 1, 1 ,.
第2図は、本発明の第2実施例の監視装置を示すブロッ
ク図である。同図において、11,11,…は、第1実施例の
場合と同様に、計測対象としての半導体素子を示す。1
2,12,…は第1実施例と同様の温度センサーであり、そ
れらの次段にはアナログスイッチ(アナログマルチプレ
クサ)13及びA/D変換器14を介してデジタル計算機15が
接続されている。アナログスイッチ13は計算機15からの
制御信号によって高速で切換えられ、温度センサー12,1
2,…からの出力信号を時間的に直列に順次ひとつずつA/
D変換器14に送る。温度センサー12,12,…からの出力信
号はA/D変換器14でデジタル信号に変換された後デジタ
ル計算機15に送られ、それらの信号は、その計算機15内
で、第1実施例において温度補正回路3,3,…で行われた
のと同様に補正される。それらの補正後の信号は、その
後第1実施例の場合と同様に処理され、異常信号16が出
力されると共に個別異常信号17,17,…が出力され、CRT1
8にどの半導体素子11,11,…が異常であるかが表示され
る。FIG. 2 is a block diagram showing a monitoring device according to the second embodiment of the present invention. In the figure, reference numerals 11, 11, ... Denote semiconductor elements as measurement targets, as in the case of the first embodiment. 1
Reference numerals 2, 12, ... Are temperature sensors similar to those in the first embodiment, and a digital computer 15 is connected to their subsequent stages via an analog switch (analog multiplexer) 13 and an A / D converter 14. The analog switch 13 is switched at high speed by the control signal from the computer 15, and the temperature sensor 12,1
The output signals from 2, ...
Send to D converter 14. The output signals from the temperature sensors 12, 12, ... Are converted into digital signals by the A / D converter 14 and then sent to the digital computer 15, and these signals are transferred to the temperature in the computer 15 in the first embodiment. The correction is performed in the same manner as the correction circuits 3, 3, .... The corrected signals are then processed in the same manner as in the case of the first embodiment to output the abnormal signal 16 and the individual abnormal signals 17, 17, ...
8 shows which semiconductor element 11, 11, ... Is abnormal.
上述の本発明の実施例の監視装置には以下の効果が得ら
れる。即ち、複数の半導体素子1,11によって行われる負
荷の分担状態を、それらの素子1,11が発する熱によって
検出できる。このように、その検出は、半導体素子1,1
1,に加える高電圧・大電流を直接測るものではないた
め、各種の利点、例えば、絶縁耐圧、感電又はノイズ等
に対して特別の考慮を必要としない等の利点がある。温
度センサー2,12からの出力を補正機能をもつ温度補正回
路3(第1実施例)又はデジタル計算機15(第2実施
例)で補正するようにしたので、各温度センサー2,12自
体の特性のばらつきや温度センサー2,12の電力半導体素
子1,11に対する配置位置のばらつきの影響等を受けにく
く、精度の高い温度検出が可能である。さらに、各温度
センサー2,12での検出値を比較して、異常状態にあるか
否かを検出するに際し、それらの検出値を前記の如く補
正すると共に比較すべき基準信号としてそれらの補正後
の信号の標準偏差(又は平均値)を用いるようにしたの
で、周囲温度の影響を受けることなく、安定的に異常か
否かを検出できる。これにより、長期間にわたって緩や
かに行われる検出しにくい半導体素子1,11の劣化状態を
的確に検出でき、それらの素子1,11の劣化の進み具合を
故障とは無関係に故障に至る前に検出できる。よって、
故障する可能性のある半導体素子を事前に検出でき、そ
れらの半導体素子を使用したシステム全体としての信頼
性及び稼動率を向上させることができる。The monitoring device of the above-described embodiment of the present invention has the following effects. That is, the load sharing state performed by the plurality of semiconductor elements 1 and 11 can be detected by the heat generated by those elements 1 and 11. In this way, the detection of the semiconductor element 1,1
Since it does not directly measure the high voltage or large current applied to 1, it has various advantages, for example, there is an advantage that no special consideration is required for dielectric strength, electric shock or noise. Since the outputs from the temperature sensors 2 and 12 are corrected by the temperature correction circuit 3 (first embodiment) having a correction function or the digital computer 15 (second embodiment), the characteristics of the temperature sensors 2 and 12 themselves. Of the temperature sensors 2 and 12 and the variation of the arrangement positions of the temperature sensors 2 and 12 with respect to the power semiconductor elements 1 and 11, and the like, and highly accurate temperature detection is possible. Furthermore, when comparing the detected values of the temperature sensors 2 and 12 to detect whether or not there is an abnormal state, the detected values are corrected as described above, and after being corrected as reference signals to be compared. Since the standard deviation (or average value) of the signal is used, it is possible to stably detect whether or not there is an abnormality without being affected by the ambient temperature. As a result, it is possible to accurately detect the deterioration state of the semiconductor elements 1 and 11 that is difficult to detect slowly over a long period of time, and to detect the progress of deterioration of these elements 1 and 11 before the failure regardless of the failure. it can. Therefore,
It is possible to detect in advance semiconductor elements that may fail, and improve the reliability and operating rate of the entire system using those semiconductor elements.
このように本発明の監視装置によれば、複数の素子のう
ちのあるものが正常な状態にあるか否かを簡単且つ高精
度に検出することができる。As described above, according to the monitoring device of the present invention, it is possible to easily and highly accurately detect whether or not some of the plurality of elements are in a normal state.
第1図は本発明の第1実施例の監視装置を示すブロック
図、第2図は本発明の第2実施例の監視装置を示すブロ
ック図である。 1,11……半導体素子、2,12……温度センサー、3……温
度補正回路、4,14……A/D変換器、5,15……デジタル計
算機、6,16……警報信号、7,17……個別異常信号、8,18
……CRT、13……アナログスイッチ。FIG. 1 is a block diagram showing a monitoring device according to a first embodiment of the present invention, and FIG. 2 is a block diagram showing a monitoring device according to a second embodiment of the present invention. 1,11 …… Semiconductor element, 2,12 …… Temperature sensor, 3 …… Temperature correction circuit, 4,14 …… A / D converter, 5,15 …… Digital calculator, 6,16 …… Alarm signal, 7,17 …… Individual abnormal signal, 8,18
…… CRT, 13 …… Analog switch.
Claims (1)
をそれらの素子からの熱放射に基づいて検出する温度セ
ンサーと、 それらの温度センサーでの検出信号に基づいて前記複数
の素子の温度の平均値および標準偏差からなる基準信号
を生成する基準信号生成手段と、 前記各検出信号と前記基準信号とをそれぞれ比較して各
素子の温度が前記平均値から前記標準偏差の所定の定数
倍よりも離れているときに異常信号を選択的に出力する
比較手段と を備えたことを特徴とする複数の素子の負荷分担状態監
視装置。1. A temperature sensor for detecting the temperature of each of a plurality of elements sharing a load based on heat radiation from the elements, and a temperature sensor for detecting the temperature of the plurality of elements based on a detection signal from the temperature sensor. Reference signal generating means for generating a reference signal composed of an average value and a standard deviation, and the temperature of each element by comparing the detection signal and the reference signal respectively from a predetermined constant multiple of the standard deviation from the average value. A load sharing state monitoring device for a plurality of elements, the comparing device selectively outputting an abnormal signal when the two are apart from each other.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17436586A JPH07123348B2 (en) | 1986-07-24 | 1986-07-24 | Load sharing status monitor for multiple devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17436586A JPH07123348B2 (en) | 1986-07-24 | 1986-07-24 | Load sharing status monitor for multiple devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6331468A JPS6331468A (en) | 1988-02-10 |
JPH07123348B2 true JPH07123348B2 (en) | 1995-12-25 |
Family
ID=15977343
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17436586A Expired - Lifetime JPH07123348B2 (en) | 1986-07-24 | 1986-07-24 | Load sharing status monitor for multiple devices |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07123348B2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63213370A (en) * | 1987-02-28 | 1988-09-06 | Nippon Denso Co Ltd | Protective circuit for power transistor |
JP5907236B2 (en) * | 2013-12-11 | 2016-04-26 | 株式会社デンソー | Temperature detection device |
US9046912B1 (en) * | 2014-02-24 | 2015-06-02 | The Boeing Company | Thermally balanced parallel operation of transistors |
-
1986
- 1986-07-24 JP JP17436586A patent/JPH07123348B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS6331468A (en) | 1988-02-10 |
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