JPH07112073B2 - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JPH07112073B2 JPH07112073B2 JP61020775A JP2077586A JPH07112073B2 JP H07112073 B2 JPH07112073 B2 JP H07112073B2 JP 61020775 A JP61020775 A JP 61020775A JP 2077586 A JP2077586 A JP 2077586A JP H07112073 B2 JPH07112073 B2 JP H07112073B2
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- conversion device
- oxide
- photovoltaic power
- chromium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Light Receiving Elements (AREA)
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】 ［発明の技術分野］ 本発明は、鉛とクロムとを含む酸化物によって構成され
る光電変換装置に関する。TECHNICAL FIELD OF THE INVENTION The present invention relates to a photoelectric conversion device composed of an oxide containing lead and chromium.
［発明の技術的背景とその問題点］ 光電変換装置としてはｐ−ｎ又はｐ−ｎ−ｐの導電型の
半導体の接合、又は半導体と金属との接合を使用した光
電変換装置が広く使用されていることは周知である。こ
れらの光電変換装置は光をあてると自ら起電力を発生す
るので外部起電力の必要はない。[Technical background of the invention and its problems] As a photoelectric conversion device, a photoelectric conversion device using a junction of a semiconductor of pn or p-n-p conductivity type or a junction of a semiconductor and a metal is widely used. It is well known that These photoelectric conversion devices generate electromotive force by themselves when they are exposed to light, and thus do not need external electromotive force.
また本出願人は上述のような接合を使用することなく、
酸化物誘電体材料の研究を行っていた過程で誘電体材料
の光電変換現象を発見し、鉛とクロムとを含む酸化物に
導電層を形成して成る光電変換装置を先に特願昭53−20
583号（特公昭55−35874号）として出願した。この光電
変換装置によると酸化物に入射した光は酸化物内で電流
に変換され、導電層を経て光電変換装置の外部へ取出さ
れる。この酸化物が薄膜の場合は入射光に対応して起電
力を生じ光感応性を示し、また酸化物の厚さが大きい場
合は蓄電気効果を示した。Also, the Applicant has been able to
In the course of research on oxide dielectric materials, we discovered the photoelectric conversion phenomenon of dielectric materials, and first proposed a photoelectric conversion device formed by forming a conductive layer on an oxide containing lead and chromium. -20
Filed as 583 (Japanese Patent Publication No. 55-35874). According to this photoelectric conversion device, light incident on the oxide is converted into a current in the oxide, and is extracted to the outside of the photoelectric conversion device through the conductive layer. When this oxide was a thin film, it generated photoelectromotive force in response to incident light and showed photosensitivity, and when the oxide was thick, it showed a storage effect.
しかしながらこのような従来の光電変換装置によって得
られる光起電力は、値が小さいので用途が限定され、ま
た大きな光起電力を必要とする場合には装置全体が大型
となるのは避けられない。However, since the photovoltaic power obtained by such a conventional photoelectric conversion device has a small value, its application is limited, and when a large photovoltaic power is required, it is inevitable that the entire device becomes large.
［発明の目的］ 本発明は、大きな値の光起電力が得られるようにした光
電変換装置を提供することを目的とするものである。[Object of the Invention] It is an object of the present invention to provide a photoelectric conversion device capable of obtaining a large value of photovoltaic power.
［発明の概要］ 上記目的を達成するための本発明は、 (Pb1-xSrx)2(Cr1-yWy)O5 但し、ｘ＝0.2,y＝0.3又はｘ＝0.4,y＝0.3 又はｘ＝0.3,y＝0.2又はｘ＝0.3,y＝0.4 で表される組成の酸化物に導電層を形成してなることを
特徴とするものである。SUMMARY OF THE INVENTION The present invention for achieving the above object is (Pb 1-x Sr x ) 2 (Cr 1-y W y ) O 5 provided that x = 0.2, y = 0.3 or x = 0.4, y = 0.3 or x = 0.3, y = 0.2 or x = 0.3, y = 0.4, and a conductive layer is formed on the oxide.
［発明の実施例］ 以下本発明の実施例を説明する。[Examples of the Invention] Examples of the present invention will be described below.
実施例１ 出発原料として酸化鉛PbO,酸化クロムCr2O3,2価金属元
素Ａとして例えばSrの炭酸塩である炭酸ストロンチムSr
CO3及び６価金属元素Ｂとして例えばＷの酸化物である
酸化タングステンWO3を用い、 (Pb1-xSrx)2(Cr1-yWy)O5の組成比となる如く秤量した。
この原料をポリエチレン製ポットで10〜15時間湿式混合
し、乾燥後400〜500℃で２時間にわたって仮焼成を行な
った。仮焼成後ボールミルにて10〜15時間粉砕を行ない
粒径約１μｍ程度とした。この仮焼成粉末にバインダー
を加え、1ton/cm2で加圧成形した。更に成形体を650〜9
00℃にて２時間焼成し焼結体を得た。次に焼結体を適当
な寸法形状に加工し、例えば直径20mm,厚さ1mmの円板状
の焼結片（ａ）と、直径20mm,厚さ0.1mmの円板状の焼結
片（ｂ）との２種類を用意し、各々の上下両面に電極と
なるアルミニウム膜を真空蒸着法により付着して、２種
類の光電変換装置を形成した。Example 1 Lead oxide PbO, chromium oxide Cr 2 O 3 , as a starting material, and strontium carbonate Sr, which is a carbonate of Sr as a divalent metal element A, for example.
As CO 3 and hexavalent metal element B, for example, tungsten oxide WO 3 which is an oxide of W was used, and weighed so that the composition ratio of (Pb 1-x Sr x ) 2 (Cr 1-y W y ) O 5 was obtained. .
The raw materials were wet mixed in a polyethylene pot for 10 to 15 hours, dried, and then calcined at 400 to 500 ° C. for 2 hours. After the calcination, the powder was crushed in a ball mill for 10 to 15 hours to have a particle size of about 1 μm. A binder was added to the pre-baked powder and pressure molding was performed at 1 ton / cm 2 . Furthermore, the molded body is 650-9
It was fired at 00 ° C for 2 hours to obtain a sintered body. Next, the sintered body is processed into an appropriate size and shape, for example, a disc-shaped sintered piece (a) having a diameter of 20 mm and a thickness of 1 mm and a disc-shaped sintered piece (diameter of 20 mm and a thickness of 0.1 mm ( b) and two types of photoelectric conversion devices were formed by depositing aluminum films as electrodes on the upper and lower surfaces of each by vacuum vapor deposition.
すなわち、鉛酸化物（PbO）におけるPbの位置を一部Sr
によって置換しかつクロム酸化物（Cr2O3）におけるCr
の位置を一部Ｗによって置換した前記組成で表わされる
酸化物を形成して、光電変換装置を形成した。また、Sr
による置換割合ｘ（mol％）及びＷによる置換割合ｙ（m
ol％）を数段階に変えて光電変換装置を形成した。That is, the Pb position in the lead oxide (PbO) is partially Sr.
Substituted by and in Cr oxide (Cr 2 O 3 ) Cr
A photoelectric conversion device was formed by forming an oxide represented by the above composition in which a part of the position was replaced by W. Also, Sr
Substitution ratio x (mol%) with W and substitution ratio y (m with W
ol%) was changed in several steps to form a photoelectric conversion device.
以上のようにして得られた光電変換装置に対して、波長
4.880Å，レーザーパワー20μw/cm2のレーザー光線を商
社し、直流電圧計によって光起電力を測定したところ第
１表のような結果が得られた。For the photoelectric conversion device obtained as described above,
When a laser beam with a laser power of 4.880Å and a laser power of 20 μw / cm 2 was traded and the photovoltaic power was measured with a DC voltmeter, the results shown in Table 1 were obtained.
同表から明らかなように、前記組成の酸化物においてSr
による置換割合ｘを0.2（20mol％）に設定し、かつＷに
よる置換割合ｙを0.3（30mol％）に設定したとき、光起
電力は最大値を示し、10.21mV/cm2に達した。この値は
従来の光電変換装置で得られる値0.08mV/cm2〜0.15mV/c
m2と比較して、約68〜127倍にもなっている。 As is clear from the table, in the oxide having the above composition, Sr
When the replacement ratio x by X was set to 0.2 (20 mol%) and the replacement ratio y by W was set to 0.3 (30 mol%), the photovoltaic power showed the maximum value and reached 10.21 mV / cm 2 . This value is 0.08 mV / cm 2 to 0.15 mV / c obtained by the conventional photoelectric conversion device.
It is about 68 to 127 times as large as m 2 .
また前記値のｘとｙとの組み合せ以外の場合でも、ｘを
0.2〜0.8に設定しかつｙを0.2〜0.8に設定した組み合せ
を行うことにより、従来の値よりも優れた光起電力を得
ることができる。特にｘ＝0.2,y＝0.3、ｘ＝0.4,y＝0.
3、ｘ＝0.3,y＝0.2、ｘ＝0.3,y＝0.4の組合せのときに8
000μＶ以上の高起電力が得られることを確めた。In addition, even in the case other than the combination of the above values x and y,
By performing the combination of setting 0.2 to 0.8 and setting y to 0.2 to 0.8, it is possible to obtain a photoelectromotive force superior to the conventional value. Especially x = 0.2, y = 0.3, x = 0.4, y = 0.
8 for combination of 3, x = 0.3, y = 0.2, x = 0.3, y = 0.4
It was confirmed that a high electromotive force of 000 μV or more could be obtained.
次に、レーザ光線である入射光を遮断して光起電力を測
定したところ、厚さが小の焼結片（ａ）から成るものの
場合０となったが、厚さが大の焼結片（ｂ）から成るも
のの場合は０とならなかった。すなわち、厚さが大の焼
結片（ｂ）によって構成される光電変換装置は蓄電気効
果を有していることを示している。Next, when the photoelectromotive force was measured by cutting off the incident light which is a laser beam, it was 0 in the case of a sintered piece (a) having a small thickness, but a sintered piece having a large thickness was obtained. In the case of the one composed of (b), it did not become 0. That is, it is shown that the photoelectric conversion device composed of the sintered piece (b) having a large thickness has an electricity storage effect.
［発明の効果］ 以上説明したように本発明によれば、鉛とクロムとを含
む酸化物における鉛及びクロムの位置の一部をそれぞれ
Sr及びＷで置換した酸化物に導電層を形成するようにし
たので、大きな値の光起電力を得ることができる。従っ
て、用途が拡大され、大きな光起電力を必要とする場合
にも装置全体の小型化を図ることができる。[Effects of the Invention] As described above, according to the present invention, a part of the positions of lead and chromium in an oxide containing lead and chromium are respectively determined.
Since the conductive layer is formed on the oxide substituted with Sr and W, a large value of photovoltaic power can be obtained. Therefore, even when the application is expanded and a large photovoltaic power is required, the size of the entire device can be reduced.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 高橋 幸治 東京都中央区日本橋１丁目13番１号 テイ ーデイーケイ株式会社内 (56)参考文献 特開 昭55−17975（ＪＰ，Ａ) 特開 昭55−17974（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Koji Takahashi 1-13-1, Nihonbashi, Chuo-ku, Tokyo TDK Corporation (56) References JP-A-55-17975 (JP, A) JP-A-55 -17974 (JP, A)
Claims (1)
特徴とする光電変換装置。(Pb 1-x Sr x ) 2 (Cr 1-y W y ) O 5 where x = 0.2, y = 0.3 or x = 0.4, y = 0.3 or x = 0.3, y = 0.2 or A photoelectric conversion device comprising a conductive layer formed on an oxide having a composition represented by x = 0.3 and y = 0.4.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61020775A JPH07112073B2 (en) | 1986-01-31 | 1986-01-31 | Photoelectric conversion device |
| US06/873,881 US4724157A (en) | 1985-12-14 | 1986-06-13 | Method of manufacturing a photoelectric conversion device |
| US07/108,330 US4835007A (en) | 1985-12-14 | 1987-10-14 | Method of manufacturing a photoelectric conversion device |
| US07/108,180 US4781767A (en) | 1985-12-14 | 1987-10-14 | Photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61020775A JPH07112073B2 (en) | 1986-01-31 | 1986-01-31 | Photoelectric conversion device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62179171A JPS62179171A (en) | 1987-08-06 |
| JPH07112073B2 true JPH07112073B2 (en) | 1995-11-29 |
Family
ID=12036527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61020775A Expired - Lifetime JPH07112073B2 (en) | 1985-12-14 | 1986-01-31 | Photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07112073B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9081426B2 (en) | 1992-03-05 | 2015-07-14 | Anascape, Ltd. | Image controller |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5517975A (en) * | 1978-07-26 | 1980-02-07 | Tdk Electronics Co Ltd | Photoelectric converter |
| JPS5517974A (en) * | 1978-07-26 | 1980-02-07 | Tdk Electronics Co Ltd | Photoelectric converter |
-
1986
- 1986-01-31 JP JP61020775A patent/JPH07112073B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9081426B2 (en) | 1992-03-05 | 2015-07-14 | Anascape, Ltd. | Image controller |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62179171A (en) | 1987-08-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Prochowicz et al. | Mechanosynthesis of pure phase mixed-cation MA x FA 1− x PbI 3 hybrid perovskites: photovoltaic performance and electrochemical properties | |
| KR101614062B1 (en) | New compound semiconductors and their application | |
| US3974108A (en) | LaCrO3 electrodes and method of manufacture | |
| JP6238149B2 (en) | New compound semiconductors and their utilization | |
| TWI469924B (en) | New compound semiconductors and their application | |
| JPH07112073B2 (en) | Photoelectric conversion device | |
| JPH07112071B2 (en) | Photoelectric conversion device | |
| US3997479A (en) | Method of reducing the evaporation of Pb during the manufacture of barium titanate (Pb substituted) semiconducting ceramics | |
| JPH07112072B2 (en) | Photoelectric conversion device | |
| JP6357757B2 (en) | Oxide sintered body, sputtering target and oxide film using the same | |
| US4781767A (en) | Photoelectric conversion device | |
| US3426251A (en) | Donor-acceptor ion-modified barium titanate capacitor and process | |
| US2883305A (en) | Photoelectric semiconductors and method of producing same | |
| KR102113260B1 (en) | Compound semiconductors having high performance and preparation method thereof | |
| US4340506A (en) | Photoelectric transfer device | |
| JP3051922B1 (en) | Oxide members for thermoelectric conversion elements | |
| JPS62179167A (en) | Photoelectric conversion device | |
| CN107032785B (en) | Lead-free ferroelectric ceramic with narrow band gap and high polarity and preparation method thereof | |
| JPS62179168A (en) | Photoelectric conversion device | |
| JPH0719910B2 (en) | Method for manufacturing photoelectric conversion device | |
| JPH07112074B2 (en) | Method for manufacturing photoelectric conversion device | |
| JPH07112075B2 (en) | Method for manufacturing photoelectric conversion device | |
| JP2597477B2 (en) | Position detection device | |
| JP4338956B2 (en) | Oxide sintered body, n-type thermoelectric conversion material, and thermoelectric conversion element using the same | |
| JPH0620157B2 (en) | Method for manufacturing photoelectric conversion device |