JPH07110491B2 - Substrate manufacturing method and apparatus - Google Patents
Substrate manufacturing method and apparatusInfo
- Publication number
- JPH07110491B2 JPH07110491B2 JP2409733A JP40973390A JPH07110491B2 JP H07110491 B2 JPH07110491 B2 JP H07110491B2 JP 2409733 A JP2409733 A JP 2409733A JP 40973390 A JP40973390 A JP 40973390A JP H07110491 B2 JPH07110491 B2 JP H07110491B2
- Authority
- JP
- Japan
- Prior art keywords
- plate
- substrate
- copper
- press
- concave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title description 5
- 239000010949 copper Substances 0.000 claims description 31
- 229910052802 copper Inorganic materials 0.000 claims description 30
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 28
- 238000005219 brazing Methods 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 22
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 239000000919 ceramic Substances 0.000 description 28
- 238000001816 cooling Methods 0.000 description 23
- 239000010410 layer Substances 0.000 description 22
- 238000003825 pressing Methods 0.000 description 7
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000006378 damage Effects 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 241000975394 Evechinus chloroticus Species 0.000 description 1
- 241000287463 Phalacrocorax Species 0.000 description 1
- 241000205407 Polygonum Species 0.000 description 1
- 241000270708 Testudinidae Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000374 eutectic mixture Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4878—Mechanical treatment, e.g. deforming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Devices For Post-Treatments, Processing, Supply, Discharge, And Other Processes (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ろう層を介して互いに
結合された熱膨張係数の異なる少なくとも２枚の板から
なる基板を製造する方法及び装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for manufacturing a substrate composed of at least two plates having different coefficients of thermal expansion, which are bonded to each other via a brazing layer.
【０００２】[0002]
【従来の技術】Doduco社の刊行物“Direct Bonding-Sub
strate”（１９８６年３月）には、１枚の基板を有する
パワー半導体モジュールの代表的な構造が図示され、ま
たＡｌ2 Ｏ3 セラミック板を金属と直接結合する２つの
方法が記載されている。この慣用の技術によれば台板
（例えば銅板）上にＡｌ2 Ｏ3 セラミック板をろう付け
し、その上にもう１つの銅板、モリブデン層及び最後に
シリコン半導体をそれぞれろう層によって設ける。この
セラミツク封着法によればＡｌ2 Ｏ3 セラミックを、ろ
う付けする前にＣｕ／Ｃｕ2 Ｏからなる共融混合物を用
いてその両側に銅層を設け、次いでこれを台板例えば銅
板とろう付けする。この銅封着セラミック板は、モリブ
デン中間層なしに直接ろう付けされるシリコンチップを
支持する。この場合プラスチックケーシングはモジュー
ルを損傷から保護する。[Prior Art] Doduco's publication "Direct Bonding-Sub"
"Strate" (March 1986) illustrates a typical structure of a power semiconductor module having a single substrate and describes two methods of directly bonding an Al 2 O 3 ceramic plate to a metal. According to this conventional technique, an Al 2 O 3 ceramic plate is brazed on a base plate (for example, a copper plate), on which another copper plate, a molybdenum layer, and finally a silicon semiconductor are respectively provided by a brazing layer. <br/> the Al 2 O 3 ceramic according to Seramitsu click sealing method, providing a copper layer on both sides using a eutectic mixture consisting of Cu / Cu 2 O before brazing, then the base plate so For example, by brazing with a copper plate, this copper-sealed ceramic plate supports silicon chips that are directly brazed without a molybdenum interlayer, in which case the plastic casing protects the module from damage. .
【０００３】半導体モジュールを、特にパワーエレクト
ロニクス分野で使用した際に生じる熱による破壊から保
護するには、モジュールを冷却体と良好に熱伝導可能に
接触させることが必要である。このためにはモジュール
の銅支持板は平坦な冷却体に対して凸状に湾曲した面
を、好ましくは球面を有していなければならず、これに
よりモジュールを当該冷却体上に側方でねじ締めした
際、モジュールは機械的応力下に冷却体に押し付けられ
る。この支持板の相応する形を得るには大きな問題が存
在する。In order to protect the semiconductor module from thermal damage that occurs when it is used, in particular in the field of power electronics, it is necessary for the module to be in good heat-conducting contact with the cooling body. The surface which is convexly curved with respect to the copper support plate flat cooling body for the module, the screw preferably should have a spherical, thereby laterally module on the heat sink When tightened, the module is pressed against the cooling body under mechanical stress. There are major problems in obtaining the corresponding shape of this support plate.
【０００４】即ち銅とＡｌ2 Ｏ3 の熱膨張係数は著しく
異なることから、各板をろう付けする際に必然的に生じ
る熱が、Ａｌ2 Ｏ3 セラミック板及び銅支持板に著しく
異な った膨張を生ぜしめる（バイメタル効果）。その結
果この構造体が冷却した後もはや意図した平行な銅支持
板ではなく、セラミック板に対して凸状に湾曲した銅支
持板が存在することになる。この事実は、冷却体への支
持板の良好な接触がこの構造体の側面でのみはなお確保
されるが、中央部ではまったく接触しないか又は不良な
状態で接触するにすぎず、従って熱の放出にはほとんど
役に立たないことを意味する。 That is, since the coefficients of thermal expansion of copper and Al 2 O 3 are remarkably different from each other, the heat inevitably generated when brazing each plate is remarkably generated in the Al 2 O 3 ceramic plate and the copper supporting plate .
It gives rise to expansion of Tsu different (bimetal effect). As a result rather than a parallel copper support plate longer intended After the structure was cooled, so that the copper support plate which is convexly curved for the ceramic plate is present. This fact means that good contact of the support plate to the cooling body is still ensured only on the lateral sides of this structure, but in the central part there is no or only poor contact, so that the heat Means that it is of little use for release.
【０００５】凸状に湾曲したできる限り球面に等しい板
構造体を得るには、十分に小さいセラミック板を、凸状
に予め変形処理した銅支持板上に軟ろう結合により設
け、その結果構造体の冷却後に所望の板構造体を少なく
とも近似して生ぜしめることができる。[0005] To obtain a convex curved equal plate structure spherical as possible Polygonum is provided by soft solder bonds sufficiently small ceramic plate, a convex shape in advance deformation processing copper support plate, as a result After cooling the structure, the desired plate structure can be produced at least approximately.
【０００６】関係式：Δｘ＝Δα・ΔＴ・１（式中Δｘ
は線膨張の差、Δαはセラミック板及び銅板の線膨張係
数の差を表し、ΔＴはろうの融点と室温との間でのこの
構造体の温度差、１は設けるべきセラミック板の長さを
表す）により、不所望の支持板変形を阻止する好ましい
方法は、Δｘ従ってパラメータΔα、ΔＴ及び１をでき
る限り小さくした際に得られることが導き出される。し
かしこれには限界がある。すなわちΔαは単に材料との
関連において左右されるのみであり、従って基板材料と
して銅及びＡｌ2 Ｏ3 の使用が望まれる限りその値は不
変である。ろう付け工程中と構造体の冷却後との温度差
をできる限り小さく保つためには、融点の低いろうを使
用する必要があるが、後に半導体モジュールの運転に際
して熱の形で生じる電力損がろうを融解させるような低
い融点のものであってはならない。約１８０℃の融点が
一般的である。しかしこの処置は、より大きなセラミッ
ク板を使用したい場合には十分ではない。なぜならセラ
ミック板の長さ１は同様に２つの材料の線膨張の差に関
する式において比例的に関与するからである。ただ一つ
の大きなセラミック板の代わりに複数の小さい板を使用
することにより、その長さ１を希望通りのものにするこ
とも提案されている。しかしこの処置は、多くの個別部
材をその都度組み合わさなければならず、更に個々の板
間を付加的に結合する必要があることから、この可能性
は総合的に見て不経済である。Relational expression: Δx = Δα · ΔT · 1 (where Δx
Is the difference in linear expansion, Δα is the difference in the coefficient of linear expansion between the ceramic plate and the copper plate, ΔT is the temperature difference of this structure between the melting point of the wax and room temperature, and 1 is the length of the ceramic plate to be provided. It is deduced that a preferred method of preventing undesired support plate deformation is obtained with Δx and therefore the parameters Δα, ΔT and 1 as small as possible. But this has its limits. That Δα is merely dependent in relation to the material, thus its value as long as the use of copper and Al 2 O 3 is desirable as the substrate material is non <br/> strange. In order to keep the temperature difference between the brazing process and after cooling the structure as small as possible, it is necessary to use a wax with a low melting point, but there will be power loss in the form of heat during the operation of the semiconductor module. It should not be of a low melting point that melts. A melting point of about 180 ° C. is common. However, this procedure is not sufficient if it is desired to use a larger ceramic plate. This is because the length 1 of the ceramic plate likewise contributes proportionally to the equation for the difference in linear expansion of the two materials. It has also been proposed to use lengths 1 as desired by using a plurality of smaller plates instead of just one large ceramic plate. However, this procedure is uneconomical in view of the fact that many individual components have to be assembled each time and that additional connections have to be made between the individual plates.
【０００７】[0007]
【発明が解決しようとする課題】本発明は、簡単かつ経
済的にろう処理によって変形した基板を規定の予め与え
られた形にすることのできる方法、及びこの方法を実施
するための装置を提供することを課題とする。SUMMARY OF THE INVENTION The present invention provides a method by which a substrate deformed by brazing in a simple and economical manner can be brought into a defined, predetermined shape, and an apparatus for carrying out this method. The task is to do.
【０００８】[0008]
【課題を解決するための手段】この課題を解決するため
本発明によれば、ろう層を介して互いに結合された熱膨
脹係数の異なる少なくとも２枚の板からなる基板を、熱
膨脹係数の大きい方の板でもって基板に対し凹のプレス
皿上に置き、ろう層が塑性変形し得るようになるまで基
板を加熱し、加熱された基板の形状がプレス皿の表面の
形状に合うまで基板を変形させる。 Means for Solving the Problems] According to <br/> present invention to solve this problem, Netsu膨coupled together via a brazing layer
A substrate consisting of at least two plates with different expansion coefficients
Press the plate concave with the plate with the larger expansion coefficient
Place on a plate and hold until the brazing layer becomes plastically deformable.
The plate is heated and the shape of the heated substrate is
Deform the substrate until it fits the shape.
【０００９】この方法及び方法を実施する装置を用い
て、ろう層によって結合された熱膨張係数の異なる少な
くとも２枚の板を、これらが予め与えられた構造体の形
に最適に適合され得るように変形することができる。特
にＡｌ2 Ｏ3 からなるセラミック板と軟ろう層により結
合された銅からなる支持板とを、例えば冷却体に対して
凸状の予め与えられた形にすることができる。Using the method and the apparatus for carrying out the method, it is possible to obtain different low thermal expansion coefficients bonded by the brazing layer.
The at least two plates can be deformed so that they can be optimally adapted to the shape of the given structure. In particular, the ceramic plate made of Al 2 O 3 and the support plate made of copper joined by a soft brazing layer can have a pre-given shape, for example with respect to the cooling body.
【００１０】銅製の支持板の形を凸状に湾曲した球面と
して形成することが特に製造のためにも好ましい。Ａｌ
2 Ｏ3 製のセラミック板、ろう層及び支持板からなる構
造体を後に、すなわちろう付けをして組み立て終了後に
本発明により所望の形に変形し得ることは特に有利であ
る。Ａｌ2 Ｏ3 と銅との膨張係数が異なることから最初
の冷却工程後に生じる機械的応力が、本発明による新た
な加熱によって著しく減少し、その結果これに伴う材料
のひずみが低下する点で本願発明の方法は有利に作用す
る。[0010] It is preferred particularly for manufacturing that form as a spherical curved shape of the copper of the support plate in a convex shape. Al
It is particularly advantageous that the structure consisting of the ceramic plate made of 2 O 3 , the brazing layer and the support plate can be transformed into the desired shape according to the invention afterwards, that is to say after brazing. Al 2 O 3 and mechanical stress expansion coefficients occurs after the first cooling step from different of copper is significantly reduced by a new heating according to the present invention, the present application in that the result strain of the material associated therewith is reduced The method of the invention works advantageously.
【００１１】特に有利なのはこの方法を特に簡単かつ経
済的に使用することができることであり、それに必要な
装置は加熱可能な母型と加圧用機械装置とのみからな
る。この加圧装置は、基板のプレス皿に隣接する板の突
出縁部にのみ作用し、従ってセラミック板もその上に取
り付けられたチップも損傷しないように構成されてい
る。更に加熱温度はろうの固有の融点よりも低いことが
好ましく、これにより構造体の加熱に際してろう層の厚
さを好ましくなく変える可能性のあるろうの流出及び供
給された熱による材料の損傷のおそれはない。加圧工程
中に供給される熱はろうを可塑性にするから、加熱する
ことなく加圧した場合にろう内に生じる可能性のある亀
裂の発生は阻止される。Particularly advantageous is the fact that this method is particularly simple and convenient.
Can be used forNeeded for it
Device can be heatedNaWith a master mold and a press machineonlyOrRana
It This pressurizer is used to project the plate adjacent to the press plate of the substrate.
Works only on the rim and is therefore ceramicBoardsTake on it
Attached chipAlsoConfigured to prevent damage
It Furthermore, the heating temperature may be lower than the intrinsic melting point of the wax.
Preferably, this allows for the thickness of the braze layer upon heating the structure.
Might change things unfavorablyFlow ofOutas well asCompanion
Material damage due to applied heatThe fear ofAbsent. Pressurization process
The heat supplied inside makes the wax plasticDoTo heat from
Tortoises that may occur in the wax when pressed without pressure
The occurrence of cracks is prevented.
【００１２】[0012]
【実施例】次に本発明を図１〜図５に基づき更に詳述す
るが、これから他の詳細な部分、特徴及び利点が明らか
である。EXAMPLES The invention will now be further described in detail with reference to FIGS. 1 to 5, it is clear now Other detailed parts, features and advantages.
【００１３】図４にはパワー半導体モジュール１の基本
構造が示されており、このパワー半導体モジュールは銅
製支持板２、軟ろう層３により結合されたＡｌ2 Ｏ3 製
セラミック板４からなり、このセラミック板４上にはも
う１つのろう層５により本来の半導体構成素子６が固定
されている。プラスチックケーシング７は半導体モジュ
ール１を損傷から保護するものである。FIG. 4 shows the basic structure of the power semiconductor module 1, which is made of copper.
A support plate 2 made of Al 2 O 3 and a ceramic plate 4 made of Al 2 O 3 joined by a soft brazing layer 3 on which the original semiconductor component 6 is formed by another brazing layer 5. It is fixed. The plastic casing 7 protects the semiconductor module 1 from damage.
【００１４】図５は構造体が通常の方法で大表面の軟ろ
う結合材３を冷却した後にどのような状態で存在するか
を示したものである。大表面の軟ろう結合材３、セラミ
ック板４及び銅板２がその製造前に平行して配列されて
いる場合には、銅の熱膨脹係数（αＣｕ＝１７５×１０
-6）とＡｌ2 Ｏ3 の熱膨脹係数（αＡｌ2 Ｏ3 ＝６６×
１０-6 ）とが著しく異なることによって必然的に、銅
製支持板２は構造体の冷却後、セラミック板４に対して
凸状に変形する。銅製支持板２のこの湾曲の発生は、平
坦な冷却体８に対する銅製支持板２の良好な熱結合がも
はや確保され得ないことを意味する。これに対しろう結
合材３の冷却後支持板の形状が僅かに凸状になれば理想
的である。何故ならその支持板２の外面を冷却体８と結
合した場合、例えばねじ締め９した場合、特に密な機械
的結合、従って相応して良好な熱結合が得られるからで
ある。FIG. 5 shows how the structure exists after cooling the large surface soft braze binder 3 in a conventional manner.
Is shown . If the large surface soft solder binder 3, the ceramic plate 4 and the copper plate 2 are arranged in parallel prior to their manufacture, the coefficient of thermal expansion of copper (αCu = 175 × 10 5
-6 ) and the coefficient of thermal expansion of Al 2 O 3 (αAl 2 O 3 = 66 ×
10-6) necessarily and is the significantly different for Rukoto, copper
After the structure is cooled, the support plate 2 made of ceramic is attached to the ceramic plate 4.
Deforms into a convex shape. Generation of the bending of the copper-made support plate 2, which means that good thermal coupling of the copper-made support plate 2 with respect to the flat cooling member 8 can no longer be ensured. In contrast the shape of the cooling after the support plate of the brazing binder 3 is ideal if the slightly convex. When bound to the cooling body 8 an outer surface of the support plate 2 because, for example, if you screwing 9, in particular tight mechanical coupling, thus from correspondingly good thermal coupling is obtained.
【００１５】冷却状態でこの僅かに凸状化した支持板形
状を得るために、ろう付け前に比較的強く凸状に変形さ
れた支持板２を使用し、ろう層３を冷却した後銅製支持
板２に所望の凸面形状を残留させることが提案されてい
る。この方法は十分に小さいセラミック板４に対しての
み適しており、それは大きなセラミック板４をろう付け
する場合、支持板２の凸状の予備変形が大表面のろう層
３の冷却後における支持板２の凹状変形を阻止するには
不十分であることを実験結果が示しているからである。
この場合にも図５に示した不所望の構造体が生じる。更
に、小型にしたセラミック板４をろう付けするこの方法
は、付加的に相互配線をする必要があることから費用が
嵩む。 In order to obtain a supporting plate shape this was slightly convex reduction in cooling state, using a brazing supporting plate 2 which is deformed to a relatively strongly convex before, after cooling the filtrate cormorants layers 3 copper-made support <br/> plate 2 has been proposed to leave a desired convex shape
It This method is suitable only for sufficiently small ceramic plate 4, it is large kina If the ceramic plate 4 brazed, after wax layer of 3 cooling convex preliminary deformation large surface of the supporting plate 2 This is because the experimental results show that it is not sufficient to prevent the concave deformation of the support plate 2 in FIG.
Also in this case, the undesired structure shown in FIG. 5 is produced. Furthermore, this method of brazing the downsized ceramic plate 4 is costly due to the additional interconnection required.
【００１６】図１〜図３により本発明の詳しい実施例を
説明する。図１は本発明による装置を示すものである。
加熱可能のプレス皿１４は下方に対し凸状に前変形され
た塊状の板からなり、その下面全体にわたって大きい面
積で加熱ら線１６が施されている。ケーシングの取り付
け及び充填まですでに完全に仕上げられ、基板を有する
使用可能状態の半導体モジュール１はプレス皿１４内に
配置されている。この場合理解を容易にするためにプレ
ス皿１４及び加圧装置１０のプレート１１の湾曲は著し
く誇張して示されている。A detailed embodiment of the present invention will be described with reference to FIGS. FIG. 1 shows a device according to the invention.
Heatable press plates 14 made of a plate of massive, which is pre-deformed in a convex shape with respect to the lower, heat et line 16 in a large area over its lower surface is applied. Already fully finished to the mounting of the casing and the filling, the semiconductor module 1 of the usable state with board is disposed in the press plates 14. Pre To facilitate this understanding
Curvature of the plate 11 of the scan disc 14 and the pressure device 10 is shown greatly exaggerated.
【００１７】市販のモジュール１の基板の銅製支持板２
は、銅製支持板２の４つのすべての側面がろう付けされ
たセラミック板４を越えて突出しており、従って銅製支
持板２を冷却体８とねじ締め９するためのモジュール１
の横側面でも、また長手側縁１５でも突出しているよう
に大きい点に注意すべきである。The copper base plate of a commercially available module 1 supporting plate 2
Is all four sides of the copper-made support plate 2 protrudes beyond the ceramic plate 4 which is brazed, thus copper Sei支
Module 1 for screwing the holding plate 2 to the cooling body 8
It should be noted that it is large so that it protrudes not only on the lateral side but also on the longitudinal side edge 15.
【００１８】銅製支持板２のこの狭い突出した長手側縁
１５は変形加圧装置１０に対する作用面を構成する。加
圧装置１０は、プレス皿１４に合わせて凸状に構成され
た下縁１２を有する２つの平行に配置されたプレート１
１からなり、プレートの厚さは銅板２の突出する長手側
縁１５の幅に等しく、またその間隔は両プレートが半導
体モジュール１のセラミック板４の横をよぎり銅製支持
板２の前記長手側縁１５上に載るように選定されてい
る。The longitudinal side edges 15 and the narrow projection of the copper-made support plate 2 constitutes the working surface against deformation pressure device 10. The pressure device 10 comprises two parallel arranged plates 1 having a lower edge 12 which is convexly configured to fit a press dish 14.
The thickness of the plate is equal to the width of the projecting longitudinal side edge 15 of the copper plate 2, and the space between the plates is such that both plates cross the side of the ceramic plate 4 of the semiconductor module 1 and are made of copper. > Selected to rest on said longitudinal side edge 15 of plate 2.
【００１９】結合されたプレート１１は垂直方向に移動
可能に配置され、上方からプレート１１に作用する力１
３はプレート１１を介して銅製支持板２の突出した長手
側縁１５上に伝達される。The plate 11 coupled is movably arranged in the vertical direction, a force 1 acting on Lapu rate 11 above or better
3 projecting copper-made support plate 2 via the plate 11 longitudinally
It is transmitted on the side edge 15.
【００２０】図２は加熱ら線１６を有するプレス皿１４
及びプレス皿１４内に存在する半導体モジュール１の銅
製支持板２、ろう層３及びＡｌ 2 Ｏ 3 セラミック板４よ
りなる基板を示す。矢印１３は加圧用のプレート１１か
ら生じる力を示すものであり、これは銅製支持板２の長
手側縁１５上に作用する。プレート１１の下縁１２は図
１に示すように凸状でありまたプレス皿１４も同じ曲率
で凸状に形成されているから、半導体モジュール１の銅
製支持板２はこの押圧力の作用で変形する。この場合銅
製支持板２の剛性は、長手側縁１５だけでなく、銅製支
持板２の全体を良好にプレス皿１４の凸状面に押し付け
るように働く。変形は、プレス処理中同時にプレス皿１
４の加熱ら線１６を介して、ろう層３のろうが可塑性に
なるが融点には達しない程度に熱を供給することによっ
て容易に行われる。モジュール１はその変形前に約１５
０℃に予備加熱し、その後に初めて加熱されたプレス皿
１４内に配置するのが有利である。加圧装置１０を用い
てプレス皿１４に銅製支持板２を押し付ける処理は、加
熱ら線１６からプレス皿１４を介して半導体モジュール
１の加熱すべきろう層３への良好な熱の流れを可能とす
る。FIG. 2 shows a press plate 14 having a heating wire 16.
And the copper of the semiconductor module 1 existing in the press plate 14
Made of supporting plate 2, brazing layer 3 and Al 2 O 3 ceramic plate 4.
Shows the Li Cheng based on plate. Arrow. 13 shows the forces arising from the plate 11 for pressing, which acts on the longitudinal side edges 15 of the copper-made support plate 2. The lower edge 12 of the plate 11 Figure
A convex shape as shown in 1 The press plates 14 also Luke et al are formed in a convex shape at the same curvature, copper semiconductor module 1
The manufactured support plate 2 is deformed by the action of this pressing force. In this case copper
The rigidity of the support plate 2 made of copper is not limited to that of the side edges 15 but is made of copper.
It works so that the entire holding plate 2 is pressed well against the convex surface of the press plate 14. Deformation is performed simultaneously with the pressing dish 1 during the pressing process.
Through the heat et line 16 of 4, brazing of the brazing layer 3 is easily carried out by supplying heat to the extent that does not reach the GaToru point becomes plastic. Module 1 to about 15 before the deformation
Advantageously, it is preheated to 0 ° C. and then placed in the heated heating pan 14 only for the first time. Process of pressing the copper-made support plate 2 to the press plates 14 by using a pressure device 10, a flow of good heat from the heating et line 16 to the wax layer 3 to be heated of the semiconductor module 1 via the press plates 14 It is possible.
【００２１】図３は図２に示すように本発明による方法
を使用した後、半導体モジュール１を室温に冷却した後
の半導体モジュール１の基板を示すものである。基板の
変形は部分的に戻され、従って全体的には所望の凸面形
状が残留し、永続的に固定される。[0021] Figure 3 after using the method according to the invention as shown in FIG. 2, the semiconductor module 1 shows a semiconductor module 1 of the board after cooling to room temperature. <br/> deformation of the base plate is partially returned, thus the whole remains the desired convex <br/> shape, are permanently fixed.
【００２２】具体的な実施例では、寸法９４mm×３４mm
×３mm（長さ×幅×厚さ）の変形すべき銅製支持板２及
びろう層３によりろう付けされた寸法６１mm×２９mm×
０６３５mmのＡｌ2 Ｏ3 セラミック板４を有する市販の
パワー半導体モジュール１を使用した。銅製支持板２と
Ａｌ2 Ｏ3 セラミック板４との間の厚さ約０２mmの軟ろ
う層３は、融点１８３℃の組成ＰｂＳｎＡｇ４０／５９
／１の合金に相当する。この場合ろう層３を可塑性にす
るため１３０℃〜１５０℃の加熱温度が使用される。実
験では特に１５０℃で加工した。同時に銅製支持板２の
長手側縁１５にかけられた圧力を５秒間維持し、その際
銅製支持板２は９００μm （加圧方向に対して垂直に測
定した）押し曲げられた。加圧装置１０、プレス皿１４
から取り出し、モジュール１を室温に冷却した際、変形
は１００μm に戻り、その結果銅製支持板２の所望の残
留凸面形状は永続的に固定される。銅製支持板２を大き
い面積の平坦な冷却体８と側方でねじ締め９した際、僅
かな機械的応力下に、半導体モジュール１は冷却体８に
理想的に熱結合され、従って総体的に最良の熱排出の可
能性が保証される。In a specific embodiment, the dimensions are 94 mm × 34 mm
× 3mm brazed dimensions 61 mm × 29 mm × a copper-made support plate 2 and the wax layer 3 to be modified (length × width × thickness)
A commercial power semiconductor module 1 having a 0635 mm Al 2 O 3 ceramic plate 4 was used. Soft solder layer 3 having a thickness of about 02mm between the copper-made support plate 2 and Al 2 O 3 ceramic plate 4, the composition having a melting point of 183 ℃ PbSnAg40 / 59
/ 1 / alloy. In this case, a heating temperature of 130 ° C. to 150 ° C. is used to make the brazing layer 3 plastic. In the experiment, it was processed at 150 ° C. The pressure applied to the longitudinal side edges 15 of the copper-made support plate 2 maintained for 5 seconds at the same time, that time <br/> copper-made support plate 2 is pressed and bent 900 .mu.m (measured perpendicular to the pressing direction) . Pressurizing device 10, press plate 14
Removed from, upon cooling module 1 to room temperature, deformation returns to 100 [mu] m, the result desired residual convex shape of the copper-made support plate 2 is permanently fixed. Upon screwing 9 a flat cooling body 8 and the side of the large area of the copper-made support plate 2, under a slight mechanical stresses, the semiconductor module 1 is ideally thermally coupled to the cooling body 8, thus overall Assures the best possible heat dissipation .
【図１】本発明による製造装置の使用状態における斜視
図である。 FIG. 1 is a perspective view of a manufacturing apparatus according to the present invention in use.
It is a figure.
【図２】本発明方法を使用してブレス皿上で基板を変形
させる過程を示す断面図である。FIG. 2 Deformation of a substrate on a breath dish using the method of the present invention
It is sectional drawing which shows the process .
【図３】本発明方法により製造された基板を冷却体に固
定する状態を示す断面図である。FIG. 3 is a plan view of the substrate manufactured by the method of the present invention fixed on a cooling body.
It is sectional drawing which shows the state to determine .
【図４】パワー半導体モジュールの基本構造の一例を示
す断面図である。FIG. 4 shows an example of a basic structure of a power semiconductor module.
It is to cross-sectional view.
【図５】従来の方法によるパワー半導体モジュールの基
板を冷却体に固定した状態を示す断面図である。5 is a view to cross-sectional view of the fixed state to the cooling body board of the power semiconductor module according to the conventional method.
１ 半導体モジュール ２ 銅製支持板 ３ 軟ろう層 ４ Ａｌ2 Ｏ3 セラミック板 ５ 硬ろう層 ６ 半導体構成素子 ７ プラスチックケーシング ８ 冷却体 ９ ねじ １０ 加圧装置 １１ プレート １２ プレートの下縁 １３ 加圧力方向 １４ プレス皿 １５ 銅製支持板の長手側縁 １６ 加熱ら線1 semiconductor module 2 copper-made support plate 3 soft solder layer 4 Al 2 O 3 lower edge 13 pressure of the ceramic plate 5 brazing layer 6 semiconductors component 7 plastic casing 8 cooling body 9 screw 10 pressing device 11 Plate 12 plates direction 14 long hand edge 16 heat et line of the press plates 15 copper-made support plate
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 23/15 Ｈ０１Ｌ 23/14 Ｃ (72)発明者 マルチン、フイグーラ ドイツ連邦共和国4784リユーテン−カレン ハルト、ウンテレシユタインプフオルテ39 (72)発明者 トーマス、リーワルト ドイツ連邦共和国4600ドルトムント50、イ ムケバンク６ (72)発明者 カールハインツ、ゾンマー ドイツ連邦共和国4788ワルシユタイン２、 ゲーテシユトラーセ12 (56)参考文献 特開 昭63−94841（ＪＰ，Ａ) 特開 昭61−156791（ＪＰ，Ａ) 実開 昭57−201837（ＪＰ，Ｕ)─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI Technical indication location H01L 23/15 H01L 23/14 C (72) Inventor Martin, Fügura Federal Republic of Germany 4784 Reuten-Karenhardt , Unteresiyuth Imforte 39 (72) Inventor Thomas, Leewald 4600 Dortmund 50 Germany, Imkebank 6 (72) Inventor Karlheinz, Sommer 4788 Warsyustein 2, Goethe Schutlerse 12 (56) References JP-A-63-94841 (JP, A) JP-A-61-156791 (JP, A) Actual development Sho-57-201837 (JP, U)
Claims (10)
係数の異なる少なくとも２枚の板からなる基板を、熱膨
脹係数の大きい方の板でもって基板に対し凹のプレス皿
（１４）上に置き、ろう層が塑性変形し得るようになる
まで基板を加熱し、加熱された基板の形状がプレス皿の
表面の形状に合うまで基板を変形させることを特徴とす
る基板の製造方法。1. A substrate comprising at least two plates having different coefficients of thermal expansion bonded to each other via a brazing layer ,
The plate having the larger expansion coefficient is placed on the press dish (14) concave to the substrate, so that the brazing layer can be plastically deformed.
Heat the substrate until the shape of the heated substrate is
Producing how the substrate, characterized in that deforming the substrate to match the shape of the surface.
り、他の板は酸化アルミニウム（Ａｌ 2 Ｏ 3 ）からな
り、ＰｂＳｎＡｇ４０／５９／１の組成のろうを使用す
ることを特徴とする請求項１記載の方法。2. The plate having the larger coefficient of thermal expansion is made of copper.
The other plates are made of aluminum oxide (Al 2 O 3 )
The method according to claim 1, characterized in that a wax having a composition of PbSnAg 40/59/1 is used .
することを特徴とする請求項３記載の方法。 3. Use of a temperature in the range of 130 ° C. to 150 ° C.
The method of claim 3, wherein the method comprises:
皿を使用することを特徴とする請求項１ないし３の１つ
に記載の方法。 4. A press which is concave in the longitudinal and transverse directions.
One of claims 1 to 3, characterized in that a plate is used.
The method described in.
２）を有する２つの平行に配置されたプレート（１１）
を有し、下縁（１２）はプレス皿の基板に対し凹の表面
に相応しており、加圧装置（１０）及び／又はプレス皿
（１４）は板（２）を変形するために、プレス皿の湾曲
した面に対して垂直に移動可能であることを特徴とする
請求項１ないし４の１つに記載の方法を実施する装置。 5. The pressure device (10) has a curved lower edge (1).
Two parallel arranged plates (11) with 2)
And the lower edge (12) has a concave surface with respect to the substrate of the press dish
Corresponding to, a pressure device (10) and / or a press dish
(14) is the curvature of the press plate to deform the plate (2)
Characterized by the ability to move vertically to the
Apparatus for carrying out the method according to one of claims 1 to 4.
に凹であることを特徴とする請求項５記載の装置。 6. Press plate (14) is longitudinal and lateral.
The device of claim 5, wherein the device is concave.
しいように長手方向及び横方向に凹に形成されているこ
とを特徴とする請求項６記載の装置。 7. The press dish (14) has a spherical surface or the like.
It has a concave shape in the longitudinal and lateral directions.
7. The apparatus according to claim 6, wherein:
を特徴とする請求項５ないし７の１つに記載の装置。 8. The press plate (14) can be heated.
Device according to one of claims 5 to 7, characterized in that
有することを特徴とする請求項８記載の装置。 9. The press dish (14) has a heating wire (16).
9. The device of claim 8, comprising.
装備した基板におい て使用することを特徴とする請求項
１ないし４の１つに記載の方法。 10. A semiconductor component of a semiconductor module
Claims, characterized in that use Te equipped with substrate smell
The method according to one of 1 to 4.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3940933.3 | 1989-12-12 | ||
| DE3940933A DE3940933C2 (en) | 1989-12-12 | 1989-12-12 | Method for deforming a base plate for semiconductor modules and device for carrying out the method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06315925A JPH06315925A (en) | 1994-11-15 |
| JPH07110491B2 true JPH07110491B2 (en) | 1995-11-29 |
Family
ID=6395270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2409733A Expired - Lifetime JPH07110491B2 (en) | 1989-12-12 | 1990-12-11 | Substrate manufacturing method and apparatus |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH07110491B2 (en) |
| DE (1) | DE3940933C2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010114263A (en) * | 2008-11-06 | 2010-05-20 | Fuji Electric Systems Co Ltd | Method of manufacturing semiconductor device and positioning jig |
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|---|---|---|---|---|
| DE4233073A1 (en) * | 1992-10-01 | 1994-04-07 | Siemens Ag | Semiconductor modular structure prodn. - by convexly shaping and bonding in single hot pressing operation |
| CA2211562C (en) * | 1993-10-06 | 2002-02-26 | R-Theta Inc. | De-warping apparatus for straightening a plate |
| DE4338107C1 (en) * | 1993-11-08 | 1995-03-09 | Eupec Gmbh & Co Kg | Semiconductor module |
| DE19609929B4 (en) * | 1996-03-14 | 2006-10-26 | Ixys Semiconductor Gmbh | The power semiconductor module |
| EP0805492B1 (en) * | 1996-04-03 | 2004-06-30 | Jürgen Dr.-Ing. Schulz-Harder | Curved metal ceramic substrate |
| JP3468358B2 (en) | 1998-11-12 | 2003-11-17 | 電気化学工業株式会社 | Silicon carbide composite, method for producing the same, and heat radiation component using the same |
| DE10125697B4 (en) * | 2001-05-25 | 2019-01-03 | Infineon Technologies Ag | Power semiconductor module and method for manufacturing a power semiconductor module |
| JP4848539B2 (en) * | 2001-08-23 | 2011-12-28 | Ｄｏｗａメタルテック株式会社 | Heat sink, power semiconductor module, IC package |
| DE10393078D2 (en) * | 2002-05-22 | 2005-05-12 | Siemens Ag | Cooling devices for cooling electrical components, module of cooling device and electrical components and arrangement of cooling device or module and support body |
| DE102004021633B4 (en) | 2004-05-03 | 2006-04-06 | Infineon Technologies Ag | Method for connecting a semiconductor chip to a chip carrier and arrangement with a semiconductor chip and a chip carrier |
| DE102004022724B4 (en) * | 2004-05-07 | 2010-12-09 | Ixys Semiconductor Gmbh | Arrangement of a semiconductor component and a heat sink and method for producing such an arrangement |
| DE102004042488A1 (en) * | 2004-08-31 | 2006-03-16 | Siemens Ag | Electrical assembly |
| DE102005039947B4 (en) * | 2005-08-24 | 2011-12-15 | Semikron Elektronik Gmbh & Co. Kg | Power semiconductor module with fastening device |
| JP7334464B2 (en) | 2019-05-15 | 2023-08-29 | 富士電機株式会社 | Semiconductor module, method for manufacturing semiconductor module, and step jig |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2639979C3 (en) * | 1976-09-04 | 1980-05-14 | Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg | Semiconductor module |
| JPS57201837U (en) * | 1981-06-19 | 1982-12-22 | ||
| JPS59172253A (en) * | 1983-03-18 | 1984-09-28 | Mitsubishi Electric Corp | Semiconductor device |
| DE3523808C3 (en) * | 1984-07-03 | 1995-05-04 | Hitachi Ltd | Process for soldering parts of an electronic arrangement made of different materials and its use |
| JPS61156791A (en) * | 1984-12-28 | 1986-07-16 | 株式会社東芝 | Ceramic circuit board |
| JPS6394841A (en) * | 1986-10-09 | 1988-04-25 | 日本板硝子株式会社 | Manufacture of flitch |
| GB2201123B (en) * | 1987-02-19 | 1990-11-14 | Marconi Electronic Devices | Electrical conductor arrangement |
| DE3917765C2 (en) * | 1989-05-31 | 1996-05-30 | Siemens Ag | Method for connecting two disk-shaped bodies made of materials with different coefficients of thermal expansion and its use |
-
1989
- 1989-12-12 DE DE3940933A patent/DE3940933C2/en not_active Expired - Lifetime
-
1990
- 1990-12-11 JP JP2409733A patent/JPH07110491B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010114263A (en) * | 2008-11-06 | 2010-05-20 | Fuji Electric Systems Co Ltd | Method of manufacturing semiconductor device and positioning jig |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06315925A (en) | 1994-11-15 |
| DE3940933C2 (en) | 1996-08-01 |
| DE3940933A1 (en) | 1991-06-27 |
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