JP3505950B2 - Heat sink plate - Google Patents

Heat sink plate

Info

Publication number
JP3505950B2
JP3505950B2 JP06876797A JP6876797A JP3505950B2 JP 3505950 B2 JP3505950 B2 JP 3505950B2 JP 06876797 A JP06876797 A JP 06876797A JP 6876797 A JP6876797 A JP 6876797A JP 3505950 B2 JP3505950 B2 JP 3505950B2
Authority
JP
Japan
Prior art keywords
substrate
plate
heat
heat dissipation
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP06876797A
Other languages
Japanese (ja)
Other versions
JPH10270612A (en
Inventor
陽一郎 馬場
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Motor Corp
Original Assignee
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Corp filed Critical Toyota Motor Corp
Priority to JP06876797A priority Critical patent/JP3505950B2/en
Publication of JPH10270612A publication Critical patent/JPH10270612A/en
Application granted granted Critical
Publication of JP3505950B2 publication Critical patent/JP3505950B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は、放熱板接合用基
板、特に、放熱板接合用基板と放熱板との接合層に存在
する気泡（ボイド）を低減することのできる放熱板接合
用基板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat dissipation plate bonding substrate, and more particularly to a heat dissipation plate bonding substrate capable of reducing air bubbles (voids) existing in a bonding layer between the heat dissipation plate bonding substrate and the heat dissipation plate. .

【０００２】[0002]

【従来の技術】従来、パワーモジュール等のように動作
時に発熱する電子部品を搭載する基板は、当該電子部品
を使用温度内に維持するために放熱対策が講じられてい
る。例えば、基板の裏面側に熱伝導率の高い大型金属を
放熱板として貼り付け、基板上で発生した熱を拡散し放
熱している。2. Description of the Related Art Conventionally, a board on which an electronic component that generates heat during operation, such as a power module, is mounted, has a heat radiation measure taken to keep the electronic component within a working temperature. For example, a large metal having high thermal conductivity is attached as a heat dissipation plate on the back surface side of the substrate to diffuse and dissipate heat generated on the substrate.

【０００３】このような放熱板と基板との接合は、強固
な接合が可能であり、かつ熱伝達性が良好なはんだ付け
によって行われことが一般的である。また、効率的な接
合作業を行うためにはんだ付け装置を用いたフローはん
だ付け方式や連続加熱炉を用いたリフローはんだ付け方
式が利用されている。ところで、部品同士のはんだ付け
を行う場合、両者間に形成される接合層（はんだ層）に
気泡（ボイド）が残留することがある。はんだ付けが行
われるプロセス中では、はんだを構成する酸化鉛、酸化
スズ、酸化ニッケル等がＨ2で還元され濡れ性を確保し
ながらはんだ付けが進む。この時の還元作用によって発
生するＨ2Ｏが残留して気泡を形成する場合がある。ま
た、接合面の凹凸によって形成された空間がそのまま残
って気泡を形成する場合もある。さらに、はんだ付け時
に使用するフラックスの気化により発生するガスによっ
て気泡が形成される場合やはんだ材の溶融が周囲部から
始まることによって発生する空間（空気層）をトラップ
した結果、その部分が残留し気泡となる場合等がある。
このような気泡が発生した場合、基板と放熱板との接合
力が極端に低減する。また、気泡によって熱伝導率が低
下し、十分な放熱が行えなくなる場合もある。[0003] Generally, the heat radiation plate and the substrate are joined by soldering, which enables strong joining and has a good heat transfer property. In addition, a flow soldering method using a soldering device and a reflow soldering method using a continuous heating furnace are used to perform an efficient joining work. By the way, when soldering components, air bubbles (voids) may remain in a bonding layer (solder layer) formed between the components. During the process of soldering, lead oxide, tin oxide, nickel oxide and the like that compose the solder are reduced by H 2 and soldering proceeds while ensuring wettability. H 2 O generated by the reducing action at this time may remain to form bubbles. In addition, the space formed by the unevenness of the joint surface may remain as it is to form bubbles. Furthermore, as a result of trapping the space (air layer) generated when bubbles are formed by the gas generated by the vaporization of the flux used during soldering or when the melting of the solder material begins from the surrounding area, that portion remains. There are cases such as bubbles.
When such bubbles are generated, the bonding force between the substrate and the heat sink is extremely reduced. In addition, the thermal conductivity may decrease due to the bubbles, and sufficient heat dissipation may not be performed.

【０００４】このような気泡対策として、例えば、特開
昭５９−３３８９７号公報には、フローはんだ付け方式
において、水平面に対して所定角度傾いた噴流はんだ路
を形成し、この噴流はんだ路に対して基板を平行に投入
するはんだ付け装置が示されている。この装置によれ
ば、はんだ層内に存在する気泡が自らの浮力によって傾
いた基板面に沿って上昇しはんだ層から排出され気泡の
ないはんだ接合層を形成している。また、同様な考え方
をリフローはんだ付け方式に適用した場合、水平面に対
して所定角度傾いた搬送具に基板を載置して連続加熱炉
中を搬送すれば、前述と同様な浮力による気泡の排出を
行うことができる。As a countermeasure against such bubbles, for example, in Japanese Patent Laid-Open No. 59-33897, in a flow soldering method, a jet solder path inclined by a predetermined angle with respect to a horizontal plane is formed and the jet solder path is formed. A soldering device for loading substrates in parallel is shown. According to this apparatus, the bubbles existing in the solder layer rise along the surface of the inclined substrate due to the buoyancy thereof and are discharged from the solder layer to form a bubble-free solder bonding layer. In addition, when applying the same concept to the reflow soldering method, if the substrate is placed on a transfer tool that is inclined at a predetermined angle with respect to the horizontal plane and transferred in a continuous heating furnace, air bubbles will be discharged by the same buoyancy as described above. It can be performed.

【０００５】[0005]

【発明が解決しようとする課題】しかし、前述した対策
は、いずれも生産設備の大がかりな改善を必要としてい
るため、生産のためのトータルコストが増加してしまう
という問題がある。However, each of the above-mentioned measures requires a large-scale improvement of the production equipment, which causes a problem that the total cost for production increases.

【０００６】また、基板を斜めにする方法では、大型基
板では基板を斜めにした時に下端側にトラップされた気
泡は上端側まで移動する必要があり、移動距離が長く完
全に排出できないとう問題がある。Further, in the method of tilting the substrate, the bubbles trapped on the lower end side of the large-sized substrate need to move to the upper end side when the substrate is tilted, which causes a problem that the moving distance is long and cannot be completely discharged. is there.

【０００７】さらに、基板を斜めにすると、当該基板に
実装はんだ付けされる部品も傾いてしまい正規の実装位
置を維持できないと共に、はんだ付け部に付着するはん
だ量も下端側に偏ってしまう。その結果、放熱板と基板
との接合強度や放熱効率に偏りが発生するという問題が
ある。Further, when the board is tilted, the components mounted and soldered on the board are also tilted, so that the regular mounting position cannot be maintained and the amount of solder attached to the soldered portion is biased toward the lower end side. As a result, there is a problem in that the bonding strength between the heat dissipation plate and the substrate and the heat dissipation efficiency are uneven.

【０００８】本発明は、上記実情に鑑みてなされたもの
で、簡単な構成で放熱板と基板との間の接合層に存在す
る気泡（ボイド）を低減することのできる放熱板接合用
基板を提供することを目的とする。The present invention has been made in view of the above circumstances, and provides a radiator plate bonding substrate capable of reducing bubbles (voids) existing in the bonding layer between the radiator plate and the substrate with a simple structure. The purpose is to provide.

【０００９】[0009]

【課題を解決するための手段】上記のような目的を達成
するために、本発明の構成は、 セラミック基台の一方
面側に発熱部品を搭載可能な金属層を有し、他方面側に
放熱板に接合可能な金属層を有する平板状３層構造の放
熱板接合用基板であって、前記放熱板接合側の金属層に
発生する熱応力は、発熱部品搭載側の金属層に発生する
熱応力より相対的に大きい熱膨張層であり、当該放熱板
接合用基板と放熱板とを接合のための加熱時に放熱板接
合側が凸状曲面になるように変形し、加熱状態からの冷
却後に平板状に復元することを特徴とする。In order to achieve the above object, the structure of the present invention has a metal layer on one side of which a heat-generating component can be mounted , and the other side of the ceramic base. <br/> a release <br/> hot plate bonding substrates of the flat three-layer structure having a metal layer bondable to the heat dissipation plate, the thermal stress generated in the metal layer before Kiho hot plate bonding side a relatively large thermal expansion layer than the thermal stress generated in the metal layer of the heat-generating component mounting side, the heat radiating plate side joined and with the heat dissipation plate bonding substrate radiator plate during heating for bonding the convex curved surface So that the
It is characterized by restoring to a flat plate shape after being rejected .

【００１０】ここで、前記放熱板接合側の凸状曲面は円
筒曲面の他、球曲面も含む。また、発生する熱応力の違
いは、基板の一方側と他方側とで熱膨張率の異なる材質
を用いたり、同じ材質でもその厚みを変えることで得る
ことができる。Here, the convex curved surface on the heat sink joining side includes a spherical curved surface as well as a cylindrical curved surface. The difference in the generated thermal stress can be obtained by using materials having different coefficients of thermal expansion between the one side and the other side of the substrate, or by changing the thickness of the same material.

【００１１】この構成によれば、放熱板と放熱板接合用
基板との接合時に当該基板を加熱することによって、基
板上下面に発生する熱応力の違いから放熱板接合側面が
他方より延び、放熱板接合側面に凸状に湾曲する。その
結果、放熱板と放熱板接合用基板との接合時に接合層に
存在する気泡は、前記基板の凸部頂部近傍から周辺部に
向かって凸状曲面に沿って自らの浮力によって移動する
ので、気泡の排出を簡単な構成で容易に行うことができ
る。また、気泡の移動距離は凸部頂部近傍から周辺部に
至る比較的短い距離になるので、十分な気泡排出を行う
ことができる。さらに、前記放熱板接合用基板の除冷
後、凸状曲面は元の形状に復帰するので、当該放熱板接
合用基板に搭載する発熱部品を安定保持することができ
る。また、放熱板と放熱板接合用基板との接合層の厚み
も均一になるので安定して接合状態を得ることができ
る。According to this structure, by heating the heat dissipation plate and the heat dissipation plate bonding substrate at the time of bonding, the heat dissipation plate bonding side surface extends from the other due to the difference in thermal stress generated on the upper and lower surfaces of the substrate, and heat dissipation is achieved. Curved convexly on the side surface of the plate joint. As a result, the bubbles present in the bonding layer at the time of bonding the heat dissipation plate and the heat dissipation plate bonding substrate move due to their buoyancy along the convex curved surface from the vicinity of the top of the convex part of the substrate toward the peripheral part, Air bubbles can be easily discharged with a simple structure. Moreover, since the moving distance of the bubbles is a relatively short distance from the vicinity of the top of the convex portion to the peripheral portion, it is possible to sufficiently discharge the bubbles. Further, since the convex curved surface returns to the original shape after the cooling of the heat dissipation plate bonding substrate, the heat generating component mounted on the heat dissipation plate bonding substrate can be stably held. Further, since the thickness of the bonding layer between the heat sink and the heat sink bonding substrate is uniform, a stable bonded state can be obtained.

【００１２】 上記のような目的を達成するために、本
発明の構成は、セラミック基台の一方面側に発熱部品を
搭載可能な金属層を有し、他方面側に放熱板に接合可能
な金属層を有する３層構造の放熱板接合用基板であっ
て、当該放熱板接合用基板は、前記発熱部品を搭載する
側の金属層の部品搭載面を平坦にすると共に、前記セラ
ミック基台の放熱板側または前記放熱板に接合可能な金
属層の放熱板側を凸状曲面にすることにより、放熱板接
合側面全体のみが凸状曲面を呈することを特徴とする。In order to achieve the above-mentioned object, the structure of the present invention has a metal layer on one side of which a heat-generating component can be mounted, and the other side of which can be joined to a heat sink. A heat dissipation plate bonding substrate having a three-layer structure having a metal layer, wherein the heat dissipation plate bonding substrate is mounted.
Side of the metal layer is flattened and the ceramic
Gold that can be bonded to the heat sink side of the Mick base or to the heat sink
By making the heat dissipation plate side of the metal layer a convex curved surface, only the entire heat dissipation plate joining side surface exhibits a convex curved surface.

【００１３】この構成によれば、放熱板と放熱板接合用
基板との接合時に接合層に存在する気泡は、前記基板の
凸部頂部近傍から周辺部に向かって凸状曲面に沿って自
らの浮力によって移動するので、気泡の排出を簡単な構
成で容易に行うことができる。また、気泡の移動距離は
凸部頂部近傍から周辺部に至る比較的短い距離になるの
で、十分な気泡排出を行うことができる。According to this structure, the bubbles existing in the bonding layer at the time of bonding the heat dissipation plate and the heat dissipation plate bonding substrate to each other along the convex curved surface from the vicinity of the top of the convex part of the substrate toward the peripheral part. Since it moves by buoyancy, bubbles can be easily discharged with a simple structure. Moreover, since the moving distance of the bubbles is a relatively short distance from the vicinity of the top of the convex portion to the peripheral portion, it is possible to sufficiently discharge the bubbles.

【００１４】上記のような目的を達成するために、本発
明の構成は、当該基板と放熱板との接合をはんだ付けに
て行うことを特徴とする。In order to achieve the above object, the structure of the present invention is characterized in that the board and the heat sink are joined by soldering.

【００１５】この構成によれば、放熱板と放熱板接合用
基板の接触位置、すなわち凸状曲面の頂部近傍が最初に
加熱され、その位置からはんだの溶融が始まり、徐々に
周囲に溶融が広がるため、はんだ層に存在する気泡を周
囲に順次押し出すことができる。また、はんだ溶融中に
凸状曲面の形成を行うことができるので、気泡の浮力を
利用した排出を行うことができる。According to this structure, the contact position between the heat dissipation plate and the heat dissipation plate joining substrate, that is, the vicinity of the top of the convex curved surface is heated first, the melting of the solder starts at that position, and the melting gradually spreads to the surroundings. Therefore, the bubbles existing in the solder layer can be sequentially pushed out to the surroundings. Further, since the convex curved surface can be formed during melting of the solder, the buoyancy of bubbles can be used for discharging.

【００１６】[0016]

【発明の実施の形態】以下、本発明の好適な実施の形態
（以下、実施形態という）を図面に基づき説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention (hereinafter referred to as an embodiment) will be described below with reference to the drawings.

【００１７】図１（ａ），（ｂ）には、本実施形態の放
熱板接合用基板（以下、単に基板という）の概略図が示
されている。図１（ａ）に示すように、基板１０はセラ
ミック基台１２の上面及び下面に金属層として銅板
（箔）１４，１６が固着された平板状の３層構造を呈
し、図１（ｂ）に示すように、銅板１４の上面には電子
部品１８（本実施形態の場合、動作時に発熱する発熱部
品とする）が実装されている。前記銅板１４，１６は、
電子部品１８とのはんだ付け接合や図２に示す放熱板２
０との接合のために設けられている。なお、図１は各電
子部品１８が並列回路を形成している例であり、銅板１
４はシート状の共通薄膜で形成しているが、必要に応じ
て銅板１４を加工した電極パターンとしてもよい。銅板
１６も同様である。前記セラミック基台１２は、例えば
ＡｌＮやＡｌ2Ｏ3等で構成され、当該セラミック基台１
２と銅板１４及び銅板１６との接合は、活性金属法（Ａ
ｇを主成分とするロー材による接合）や直接圧着法によ
って行われる。そして、３層構造を有する基板１０が、
図２に示すように放熱板２０に接合される。前記放熱板
２０はＣｕ−Ｍｏ、ＳｉＣ−Ａｌ、Ｃｕ−Ｗ等熱伝導率
が高く線膨張率の低いものが使用される。1 (a) and 1 (b) are schematic views of a heat dissipation plate bonding substrate (hereinafter, simply referred to as a substrate) of this embodiment. As shown in FIG. 1A, the substrate 10 has a flat plate-shaped three-layer structure in which copper plates (foil) 14 and 16 as metal layers are fixed to the upper and lower surfaces of the ceramic base 12, and FIG. As shown in FIG. 3, an electronic component 18 (in the present embodiment, a heat-generating component that generates heat during operation) is mounted on the upper surface of the copper plate 14. The copper plates 14 and 16 are
Soldering joint with electronic component 18 and heat sink 2 shown in FIG.
It is provided for joining with 0. Note that FIG. 1 is an example in which each electronic component 18 forms a parallel circuit.
Although 4 is formed of a sheet-shaped common thin film, it may be an electrode pattern obtained by processing the copper plate 14 if necessary. The same applies to the copper plate 16. The ceramic base 12 is made of, for example, AlN, Al 2 O 3 or the like.
2 and the copper plate 14 and the copper plate 16 are joined by the active metal method (A
g) as a main component) or a direct pressure bonding method. Then, the substrate 10 having a three-layer structure is
As shown in FIG. 2, it is joined to the heat dissipation plate 20. As the heat dissipation plate 20, those having high thermal conductivity and low linear expansion coefficient such as Cu-Mo, SiC-Al, and Cu-W are used.

【００１８】本実施形態の特徴的事項は、セラミック基
台１０の放熱板接合側面に配置された銅板１６に発生す
る熱応力（セラミック基台１０に対する曲げモーメン
ト）を電子部品１８の載置側面に配置された銅板１４に
発生する熱応力より相対的に大きく設定することによ
り、全体としてセラミック基台１０を一方に曲げて、凸
面を形成するところにある。本実施形態では、熱応力の
違いを生じさせるために、銅板１６を銅板１４よりも厚
く形成した例を示している。The characteristic feature of this embodiment is that the thermal stress (bending moment with respect to the ceramic base 10) generated in the copper plate 16 arranged on the side of the ceramic base 10 where the heat dissipation plate is joined is applied to the mounting side of the electronic component 18. By setting the thermal stress to be relatively larger than the thermal stress generated in the arranged copper plate 14, the ceramic base 10 is bent as a whole to form a convex surface. The present embodiment shows an example in which the copper plate 16 is formed thicker than the copper plate 14 in order to cause a difference in thermal stress.

【００１９】図２を用いて、本実施形態の基板１０と放
熱板２０との接合手順を説明する。まず、図１に示すよ
うなセラミック基台１２の上面に厚みｔ１の銅板１４を
固着し、前記銅板１４より厚みの厚い銅板１６（厚さｔ
２）をセラミック基台１２の下面に固着する。なお、銅
板１４と銅板１６の厚みの比は、個々の銅板の大きさや
その形態が図１（ｂ）に示すようなシート状か或いは電
極パターン状か等によって異なるが、例えば０．１５：
０．３５である。この基板１０をはんだ箔２２を介して
放熱板２０の上面に載置する（図２上段）。なお、放熱
板２０の表面及び銅板１６の表面には電解Ｎｉが施さ
れ、十分なはんだ濡れ性が確保されている。また、前記
はんだ箔２２は、例えばＰｂ５０−Ｓｎ５０の中温はん
だで、フラックスは含有されていないものとする。A procedure for joining the substrate 10 and the heat sink 20 of this embodiment will be described with reference to FIG. First, a copper plate 14 having a thickness t1 is fixed to the upper surface of a ceramic base 12 as shown in FIG. 1, and a copper plate 16 (thickness t) thicker than the copper plate 14 is formed.
2) is fixed to the lower surface of the ceramic base 12. The ratio of the thickness of the copper plate 14 to that of the copper plate 16 varies depending on the size of each copper plate and its form, such as the sheet form shown in FIG. 1B, the electrode pattern form, or the like. For example, 0.15:
It is 0.35. This substrate 10 is placed on the upper surface of the heat sink 20 via the solder foil 22 (the upper stage of FIG. 2). Electrolytic Ni is applied to the surface of the heat sink 20 and the surface of the copper plate 16 to ensure sufficient solder wettability. The solder foil 22 is, for example, a Pb50-Sn50 medium-temperature solder, and contains no flux.

【００２０】このようにセットされた基板１０と放熱板
２０は図示しない搬送装置によって、連続加熱炉（還元
炉）２４に投入される（図２中段）。この連続加熱炉２
４は、はんだ箔２２、基板１０、放熱板２０等に形成さ
れている酸化膜の還元除去を行い良好な状態ではんだ付
けを行うために、内部にＨ2ガス及びＮ2ガス（Ｈ2ガス
構成比３０％）が満たされたトンネルタイプの加熱炉
で、加熱ピーク温度は例えば３５０℃に設定されてい
る。そして、前記基板１０と放熱板２０とが連続加熱炉
２４を通過する間に加熱され前記はんだ箔２２の溶融が
行われ、両者のはんだ付けが行われることになる。The substrate 10 and the heat radiating plate 20 thus set are put into a continuous heating furnace (reduction furnace) 24 by a transfer device (not shown) (middle stage in FIG. 2). This continuous heating furnace 2
No. 4 is H 2 gas and N 2 gas (H 2 gas) in order to reduce and remove the oxide film formed on the solder foil 22, the substrate 10, the heat sink 20 and the like and perform soldering in a good state. The heating peak temperature is set to, for example, 350 ° C. in a tunnel type heating furnace in which the composition ratio is 30%). Then, the substrate 10 and the heat sink 20 are heated while passing through the continuous heating furnace 24, the solder foil 22 is melted, and both are soldered.

【００２１】基板１０の加熱に伴い、当該基板１０の熱
膨張が始まる。基板１０を構成するセラミック基台１２
は、例えばＡｌＮで構成され、その線膨張率は４．５ｐ
ｐｍ／Ｋであるのに対して、銅板１４，１６を構成する
Ｃｕの線膨張率は１６．５ｐｐｍ／Ｋである。また、セ
ラミック基台１２の下面側に固着された銅板１６は、上
面側に固着された銅板１４より厚みが厚いため相対的な
曲げモーメントが銅板１４より多くなる。すなわち、セ
ラミック基台１２の下面側に固着された銅板１６が上面
側に固着された銅板１４より多く延びようとする。銅板
１６はセラミック基台１２に固着されているので、セラ
ミック基台１２は銅板１６側に凸状に湾曲して、基板１
０全体として放熱板２０側に凸状に円筒曲面を形成する
（図２中段参照）。なお、この時の曲面の凸状頂部２６
の突出量は、例えば、幅１７ｍｍの基板で２００〜５０
０μｍ、好ましくは２３０μｍ程度である。With the heating of the substrate 10, the thermal expansion of the substrate 10 starts. Ceramic base 12 that constitutes the substrate 10
Is made of AlN, for example, and has a linear expansion coefficient of 4.5 p.
While it is pm / K, the linear expansion coefficient of Cu forming the copper plates 14 and 16 is 16.5 ppm / K. Further, since the copper plate 16 fixed to the lower surface side of the ceramic base 12 is thicker than the copper plate 14 fixed to the upper surface side, the relative bending moment is larger than that of the copper plate 14. That is, the copper plate 16 fixed to the lower surface side of the ceramic base 12 tends to extend more than the copper plate 14 fixed to the upper surface side. Since the copper plate 16 is fixed to the ceramic base 12, the ceramic base 12 is curved in a convex shape toward the copper plate 16 side,
As a whole, a convex cylindrical surface is formed on the heat dissipation plate 20 side (see the middle part of FIG. 2). The convex top 26 of the curved surface at this time
The protrusion amount is, for example, 200 to 50 for a board having a width of 17 mm.
The thickness is 0 μm, preferably about 230 μm.

【００２２】連続加熱炉２４内部において、基板１０や
放熱板２０に対して炉の熱は輻射よりも伝熱で伝わる分
が多いため、基板１０が湾曲した場合、はんだ箔２２と
接触している基板１０（実際は銅板１６）の凸状頂部２
６付近から温度上昇が始まり、はんだ箔２２の溶融もこ
の凸状頂部２６付近から始まり、徐々に周囲部に広がっ
ていく。In the continuous heating furnace 24, the heat of the furnace is transferred to the substrate 10 and the heat sink 20 by heat transfer rather than radiation, so that when the substrate 10 is curved, it is in contact with the solder foil 22. Convex top 2 of substrate 10 (actually copper plate 16)
The temperature starts to rise in the vicinity of 6, and the melting of the solder foil 22 also starts in the vicinity of the convex top 26 and gradually spreads to the peripheral portion.

【００２３】この時、はんだ箔２２の変形（凹凸等）に
よって、銅板１６とはんだ箔２２との間、または、はん
だ箔２２と放熱板２０との間にトラップされていた気泡
（気体）２８及び、はんだ箔２２その他銅板１６や放熱
板２０の表面に付着していた水分や還元作用によって発
生した水分等の不純物が気化して発生した気泡（気体）
２８は、前記凸状頂部２６付近から基板１０の凸状曲面
に沿って、自らの浮力によって図中矢印Ａ方向に移動し
はんだ層２２ａ内部から排出される。つまり、はんだ箔
２２の溶融と共に気泡２８の排出が始まり、溶融の完了
と共に気泡２８の排除が完了する。At this time, bubbles (gas) 28 trapped between the copper plate 16 and the solder foil 22 or between the solder foil 22 and the heat sink 20 due to deformation (unevenness, etc.) of the solder foil 22 and Bubbles (gas) generated by vaporization of impurities such as the solder foil 22 and other water adhering to the surfaces of the copper plate 16 and the heat sink 20 and water generated by the reducing action.
28 moves from the vicinity of the convex top 26 along the convex curved surface of the substrate 10 in the direction of arrow A in the figure by its own buoyancy and is discharged from the inside of the solder layer 22a. That is, the discharge of the bubbles 28 is started with the melting of the solder foil 22, and the removal of the bubbles 28 is completed with the completion of the melting.

【００２４】この後、連続加熱炉２４内部で徐々に除冷
することによって、図２下段に示すように銅板１４、１
６及びセラミック基台１２、すなわち基板１０は元の平
板状態に復元し、はんだ２２ａの冷却と共に復元した基
板１０が放熱板２０に平坦に固着される。After that, by gradually cooling in the continuous heating furnace 24, the copper plates 14 and 1 as shown in the lower stage of FIG.
6 and the ceramic base 12, that is, the substrate 10 is restored to the original flat plate state, and the substrate 10 that has been restored along with the cooling of the solder 22a is fixed to the heat dissipation plate 20 flatly.

【００２５】このように、熱膨張を利用し、加熱時のみ
基板１０が凸状曲面を形成し、中央部から気泡２８の排
出を行うので、はんだ付け関連設備の改善を行うことな
くはんだ層から気泡の排除を行うことができる。また、
除冷が行われると基板１０の凸状曲面は平坦面に復帰す
るので、基板１０が載置する電子部品１８を平坦面で安
定して保持すると共に、基板１０と放熱板２０との接合
層であるはんだ層２２ａの接合量は均一化され安定した
基板１０と放熱板２０との接合固定を行うことができ
る。As described above, the substrate 10 forms a convex curved surface only when heated by utilizing the thermal expansion, and the bubbles 28 are discharged from the central portion, so that the solder layer can be removed from the solder layer without improving the equipment related to soldering. Elimination of air bubbles can be performed. Also,
When the cooling is performed, the convex curved surface of the substrate 10 returns to a flat surface, so that the electronic component 18 on which the substrate 10 is mounted can be stably held on the flat surface, and the bonding layer between the substrate 10 and the heat dissipation plate 20 can be held. The amount of the solder layer 22a that is bonded is uniform, and stable bonding and fixing of the substrate 10 and the heat sink 20 can be performed.

【００２６】図３（ａ）には、他の実施形態の基板３０
が示されている。当該基板３０も図１に示す基板１０と
同様に、ＡｌＮやＡｌ2Ｏ3等で構成されたセラミック基
台３２の上面と下面に銅板３４，３６が固着された３層
構造を呈しいる。本実施形態の特徴的事項は、前記セラ
ミック基台３２の放熱板側（図３では下面側）が予め凸
状曲面を呈しているところである。なお、この時の曲面
の凸状頂部の突出量は、例えば、幅１７ｍｍの基板で２
００〜５００μｍ程度である。これ以上突出量が増加す
ると端部における熱伝導性が低下し、放熱効果に障害が
生じる恐れがある。従って、この例の場合も突出量は、
好ましくは２３０μｍ程度である。なお、基板３０の場
合、セラミック基台３２に固着された銅板３４，３６に
よる湾曲操作を必要としないため銅板３４，３６の厚み
（熱応力の大きさ）は同じに設定される。なお、本実施
形態の場合、銅板３６は比較的柔らかいため、加圧処理
等によって容易にセラミック基台３２の曲面に沿って固
着させることができる。FIG. 3A shows a substrate 30 of another embodiment.
It is shown. Like the substrate 10 shown in FIG. 1, the substrate 30 also has a three-layer structure in which copper plates 34 and 36 are fixed to the upper and lower surfaces of a ceramic base 32 made of AlN, Al 2 O 3, or the like. The characteristic feature of this embodiment is that the heat dissipation plate side (lower surface side in FIG. 3) of the ceramic base 32 has a convex curved surface in advance. The amount of protrusion of the convex top of the curved surface at this time is, for example, 2 for a board having a width of 17 mm.
It is about 100 to 500 μm. If the amount of protrusion is further increased, the thermal conductivity at the end portion may be reduced, and the heat dissipation effect may be impaired. Therefore, also in this example, the protrusion amount is
It is preferably about 230 μm. In the case of the substrate 30, since the bending operation by the copper plates 34 and 36 fixed to the ceramic base 32 is not required, the thickness (the magnitude of thermal stress) of the copper plates 34 and 36 is set to be the same. In the present embodiment, since the copper plate 36 is relatively soft, it can be easily fixed along the curved surface of the ceramic base 32 by pressure treatment or the like.

【００２７】前記基板３０と放熱板２０との接合を行う
場合、図３（ｂ）に示すように図１の実施形態と同様
に、基板３０をはんだ箔２２を介して放熱板２０に載置
する。この時、予め湾曲した基板３０をはんだ箔２２に
対して安定して載置するために、図３（ｂ）に示すよう
な基板固定用工具３８を使用することが望ましい。[0027] When performing joining between the substrate 30 and the heat radiating plate 20, similar to the embodiment of FIG. 1, as shown in FIG. 3 (b), placed on the radiating plate 20 via a foil 22 solder substrate 30 To do. At this time, in order to stably mount the pre-curved substrate 30 on the solder foil 22, it is desirable to use a substrate fixing tool 38 as shown in FIG. 3B.

【００２８】基板３０と放熱板２２との固着を行う場
合、図３（ｂ）の状態で前述した実施形態と同様に連続
加熱炉に投入する。加熱が開始されると、図２の場合と
同様に、凸状頂部４０付近からはんだ箔２２の溶融が始
まり、トラップされたり発生した気泡が図２の場合と同
様にスムーズに排出除去される。なお、図２に示す例の
場合、連続加熱炉の温度プロファイルを設定する場合、
基板加熱時の各部材の熱膨張の状態とはんだ溶融・凝固
状態の２項目を考慮して行う必要があるが、図３に示す
例の場合、セラミック基台３２の放熱板側を予め凸状曲
面で形成しているので、通常通りはんだの溶融・凝固状
態のみを考慮して容易な温度プロファイル設定を行うこ
とができる。また、同じ厚さの銅板３４，３６を使用す
ることができるので、部品の共通化を行うことができ
る。When the substrate 30 and the heat radiating plate 22 are fixed to each other, they are placed in a continuous heating furnace in the state shown in FIG. 3B as in the above-described embodiment. When the heating is started, melting of the solder foil 22 starts near the convex top 40 as in the case of FIG. 2, and trapped or generated bubbles are smoothly discharged and removed as in the case of FIG. In the case of the example shown in FIG. 2, when setting the temperature profile of the continuous heating furnace,
It is necessary to consider the two items of the thermal expansion state of each member and the solder melting / solidifying state when the substrate is heated, but in the case of the example shown in FIG. Since it is formed with a curved surface, it is possible to easily set the temperature profile in consideration of only the molten / solidified state of the solder as usual. Further, since the copper plates 34 and 36 having the same thickness can be used, the parts can be shared.

【００２９】図４には、図３に示した基板３０の変形例
である基板４２の構成が示されている。基板４２も予め
放熱板接合側（図４では下面側）に凸状曲面が形成され
ている。基板４２の場合、セラミック基台４４及び上面
に固着される銅板４６は図１に示す基板１０と同様に平
坦な板状形状を呈し、前記セラミック基台４４の下面に
固着される銅板４８が予め凸状曲面を呈している。この
場合も、図３の例と同様に、はんだの溶融、気泡の排出
をスムーズに行い、基板４２と放熱板２０との接合を行
うことができる。また、材料として加工し易い銅板に凸
状曲面を設けることによって、部品コストの低減を行う
ことができる。FIG. 4 shows the structure of a substrate 42 which is a modification of the substrate 30 shown in FIG. The substrate 42 also has a convex curved surface formed in advance on the heat sink joining side (lower surface side in FIG. 4). In the case of the substrate 42, the ceramic base 44 and the copper plate 46 fixed to the upper surface have a flat plate shape like the substrate 10 shown in FIG. 1, and the copper plate 48 fixed to the lower surface of the ceramic base 44 is previously formed. It has a convex curved surface. Also in this case, as in the example of FIG. 3, the melting of the solder and the discharge of bubbles can be smoothly performed, and the substrate 42 and the heat dissipation plate 20 can be joined. Further, the cost of parts can be reduced by providing a convex curved surface on a copper plate which is easy to process as a material.

【００３０】なお、銅板４８に凸状曲面を予め形成する
ことによって、実質的に銅板４６より銅板４８の方が厚
くなる。このため、図１、図２で説明したような熱膨張
による湾曲変形作用も加わる。この結果、銅板４８に形
成する凸状曲面の突出量を図３の例より少なくすること
が可能になり、銅板４８の加工コストの低減をさらに行
うことができる。また、基板４２は予め凸状曲面を有す
るため、連続加熱炉に投入する際には、基本的には図３
の例と同様に基板固定用工具３８を使用することが望ま
しいが、前述したように基板４２は、銅板４６，４８の
熱膨張の違いによる湾曲変形作用も行うので、予め形成
する凸状曲面の突出量を少なくできる。従って、基板固
定用工具３８の使用は、必要に応じて行えばよい。な
お、基板固定用工具３８を使用する場合、当該基板固定
用工具３８の基板保持部に熱膨張による湾曲変形（上方
への移動）を考慮して、変形分を吸収するダンパ機能を
有する構成としてもよい。By forming a convex curved surface on the copper plate 48 in advance, the copper plate 48 becomes substantially thicker than the copper plate 46. Therefore, the bending deformation action due to the thermal expansion as described in FIGS. 1 and 2 is also added. As a result, the protruding amount of the convex curved surface formed on the copper plate 48 can be made smaller than that in the example of FIG. 3, and the processing cost of the copper plate 48 can be further reduced. In addition, since the substrate 42 has a convex curved surface in advance, basically when the substrate 42 is put into a continuous heating furnace, it is basically shown in FIG.
Although it is desirable to use the board fixing tool 38 as in the above example, since the board 42 also performs the bending deformation action due to the difference in thermal expansion of the copper plates 46 and 48, as described above, the board 42 having a convex curved surface formed in advance is used. The amount of protrusion can be reduced. Therefore, the board fixing tool 38 may be used as needed. When the board fixing tool 38 is used, the board holding portion of the board fixing tool 38 has a damper function to absorb the deformation in consideration of the curving deformation (movement upward) due to thermal expansion. Good.

【００３１】図５に示す基板５０の構造は、図１に示す
熱膨張を利用した例の変形例である。基板５０もセラミ
ック基台５２を中心に上面及び下面に金属板を固着した
３層構造である点は他の例と同様である。基板５０の場
合、セラミック基台５２の上面に固着した金属板５４は
下面に固着した金属板５６より小さな線膨張率を有する
材料で形成されている。例えば、下面側に固着する金属
板５６を他の例と同様にＣｕ（線膨張率：１６．５ｐｐ
ｍ／Ｋ）で構成した場合、上面側金属板５４はＣｕより
線膨張率の小さい材質、例えばモリブデン（Ｍｏ）（線
膨張率：５．１ｐｐｍ／Ｋ）を使用する。この場合、基
板５０を加熱した場合、図２で示した例と同様に、放熱
板接合側（図５では下面側）の金属板（銅板）５６の方
がより多く膨張し延びるため下側凸状に湾曲し、凸状曲
面を形成する。この結果、連続加熱炉内における加熱時
のはんだ箔の溶融や気泡の移動、排出除去等の効果は図
２で説明した場合と同様である。なお、下面側の金属板
５６にＣｕを使用した場合、上面側の金属板５４に使用
したＭｏの代替材としては、例えば、ニッケルやタング
ステン、アルミニウムがあげられる。The structure of the substrate 50 shown in FIG. 5 is a modification of the example utilizing the thermal expansion shown in FIG. Like the other examples, the substrate 50 also has a three-layer structure in which metal plates are fixed to the upper surface and the lower surface centering on the ceramic base 52. In the case of the substrate 50, the metal plate 54 fixed to the upper surface of the ceramic base 52 is made of a material having a smaller linear expansion coefficient than the metal plate 56 fixed to the lower surface. For example, the metal plate 56 fixed to the lower surface side is made of Cu (coefficient of linear expansion: 16.5 pp) as in the other examples.
m / K), the upper surface side metal plate 54 uses a material having a smaller linear expansion coefficient than Cu, for example, molybdenum (Mo) (linear expansion coefficient: 5.1 ppm / K). In this case, when the substrate 50 is heated, the metal plate (copper plate) 56 on the radiator plate joining side (lower surface side in FIG. 5) expands and extends more and extends downward as in the example shown in FIG. Curved to form a convex curved surface. As a result, the effects such as melting of the solder foil, movement of bubbles, and discharge removal during heating in the continuous heating furnace are the same as those described with reference to FIG. When Cu is used for the lower metal plate 56, nickel, tungsten, or aluminum is given as an alternative material to Mo used for the upper metal plate 54.

【００３２】このように、材質毎の線膨張率の違いを利
用することによって、基板を制作する場合の材料選択範
囲が広がり設計の自由度を向上することができる。As described above, by utilizing the difference in the linear expansion coefficient for each material, the material selection range in the case of manufacturing a substrate can be expanded and the degree of freedom in design can be improved.

【００３３】なお、上述した各実施形態においては、セ
ラミック基台の放熱板側に固着する金属として銅を使用
した例を説明したが、電気伝導度が高い材質であれば任
意であり、さらに、熱膨張を利用した例の場合は、電気
伝導度及びヤング率の高い材質の中から適宜選択するこ
とができる。In each of the above-described embodiments, an example in which copper is used as the metal fixed to the radiator plate side of the ceramic base has been described, but any material having high electric conductivity can be used. In the case of using thermal expansion, it can be appropriately selected from materials having high electric conductivity and Young's modulus.

【００３４】また、上述した各基板１０，３０，４２，
５０は、放熱板との接合時にはんだを使用しない場合で
も接合層に存在する気泡を排除することができる。Further, each of the above-mentioned substrates 10, 30, 42,
The bubble 50 can eliminate bubbles existing in the bonding layer even when solder is not used at the time of bonding with the heat dissipation plate.

【００３５】例えば、主として熱膨張を利用する基板１
０，５０等の場合、まず、基板１０（５０）を所定温度
まで加熱して放熱板接合側に凸状曲面を形成し、シリコ
ングリスや接着剤が塗布された放熱板の上に載置する。
そして、基板１０（５０）の除冷を行うと、曲面形状が
元の平坦な形状に復帰する。この時、凸状頂部から放熱
板に対する密着が始まるので、シリコングリスや接着剤
の内部にトラップされていた気泡は徐々に周辺部に向か
って追い出され、良好な気泡は移出排除を行うことがで
きる。For example, the substrate 1 mainly utilizing thermal expansion
In the case of 0, 50, etc., first, the substrate 10 (50) is heated to a predetermined temperature to form a convex curved surface on the radiator plate bonding side, and the substrate 10 (50) is placed on the radiator plate coated with silicon grease or an adhesive. .
Then, when the substrate 10 (50) is cooled, the curved surface shape returns to the original flat shape. At this time, since the adhesion to the heat sink starts from the convex top, the bubbles trapped inside the silicon grease or the adhesive are gradually expelled toward the peripheral part, and good bubbles can be excluded. .

【００３６】また、基板３０，４２等のように予め放熱
板接合側に凸状曲面が形成されている場合は、図６に示
すように、シリコングリスや接着剤５８が塗布された放
熱板上で基板４２を曲面に沿って転がせば、シリコング
リスや接着剤５８の内部にトラップされていた気泡の排
出除去を容易に行うことができる。When a convex curved surface is previously formed on the radiator plate bonding side like the substrates 30, 42, etc., as shown in FIG. 6, on the radiator plate coated with silicone grease or adhesive 58. By rolling the substrate 42 along the curved surface, the bubbles trapped inside the silicon grease or the adhesive 58 can be easily discharged and removed.

【００３７】なお、上述した実施形態のうち熱膨張を利
用する基板の場合、基板の上面側より下面側の曲げモー
メントが相対的に多く働けば、同様の効果を得ることが
可能で、上面側に配線パターンを固着し、下面側にシー
ト状の金属板を固着した場合でもよい。In the case of the substrate utilizing the thermal expansion in the above-mentioned embodiments, the same effect can be obtained if the bending moment on the lower surface side of the substrate is relatively larger than that on the upper surface side. It is also possible to fix the wiring pattern to and to fix the sheet-like metal plate on the lower surface side.

【００３８】なお、上述した各実施形態においては、放
熱板との接合面が円筒曲面である場合を例にとって説明
しているが、球面で形成される曲面でも同様な効果を得
ることができる。In each of the above-described embodiments, the case where the joint surface with the heat sink is a cylindrical curved surface has been described as an example, but the same effect can be obtained even with a curved surface formed of a spherical surface.

【００３９】[0039]

【発明の効果】本発明によれば、生産設備等の改善を行
うことなく、簡単な構成で放熱板と基板との間の接合層
に存在する気泡（ボイド）を低減することができる。According to the present invention, it is possible to reduce air bubbles (voids) existing in the bonding layer between the heat dissipation plate and the substrate with a simple structure without improving the production equipment or the like.

【図面の簡単な説明】[Brief description of drawings]

【図１】 本発明の実施形態に係る放熱板接合用基板の
概略図である。FIG. 1 is a schematic view of a heat dissipation plate bonding substrate according to an embodiment of the present invention.

【図２】 図１の放熱板接合用基板と放熱板との接合手
順を説明する説明図である。FIG. 2 is an explanatory view illustrating a procedure for joining the heat sink joining substrate and the heat sink shown in FIG.

【図３】 本発明の実施形態に係る他の放熱板接合用基
板の概略図と当該放熱板接合用基板と放熱板の接合方法
を説明する説明図である。FIG. 3 is a schematic view of another heat dissipation plate bonding substrate according to the embodiment of the present invention, and an explanatory diagram illustrating a bonding method of the heat dissipation plate bonding substrate and the heat dissipation plate.

【図４】 本発明の実施形態に係る他の放熱板接合用基
板の概略図である。FIG. 4 is a schematic view of another heat dissipation plate bonding substrate according to the embodiment of the present invention.

【図５】 本発明の実施形態に係るさらに他の放熱板接
合用基板の概略図である。FIG. 5 is a schematic view of still another heat dissipation plate bonding substrate according to the embodiment of the present invention.

【図６】 本発明の実施形態に係る放熱板接合用基板を
シリコングリスを介して放熱板に接合する場合の気泡排
除を説明する説明図である。FIG. 6 is an explanatory diagram illustrating elimination of bubbles when the heat dissipation plate bonding substrate according to the embodiment of the present invention is bonded to the heat dissipation plate via silicon grease.

【符号の説明】[Explanation of symbols]

１０，３０，４２，５０ 放熱板接合用基板（基板）、
１２，３２，４４，５２ セラミック基台、１４，１
６，３４，３６，４６，４８ 銅板、２０ 放熱板、２
２ はんだ箔、２６，４０ 凸状頂部、２８ 気泡、５
４，５６ 金属板。10, 30, 42, 50 Heat dissipation plate bonding substrate (substrate),
12,32,44,52 Ceramic base, 14,1
6,34,36,46,48 Copper plate, 20 Heat sink, 2
2 solder foil, 26,40 convex top, 28 bubbles, 5
4,56 Metal plate.

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 23/36 H01L 23/12 ─────────────────────────────────────────────────── ─── Continuation of the front page (58) Fields surveyed (Int.Cl. 7 , DB name) H01L 23/36 H01L 23/12

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 セラミック基台の一方面側に発熱部品を
搭載可能な金属層を有し、他方面側に放熱板に接合可能
な金属層を有する平板状３層構造の放熱板接合用基板で
あって、 前記放熱板接合側の金属層に発生する熱応力は、発熱部
品搭載側の金属層に発生する熱応力より相対的に大きい
熱膨張層であり、当該放熱板接合用基板と放熱板とを接
合のための加熱時に放熱板接合側が凸状曲面になるよう
に変形し、加熱状態からの冷却後に平板状に復元するこ
とを特徴とする放熱板接合用基板。1. A board for joining a radiator plate having a flat plate-shaped three-layer structure, which has a metal layer on one side of which a heat-generating component can be mounted and a metal layer which can be joined to a radiator plate on the other side. The thermal stress generated in the metal layer on the heat dissipation plate bonding side is a thermal expansion layer that is relatively larger than the thermal stress generated on the metal layer on the heat generating component mounting side, A heat dissipation plate bonding substrate, which is deformed so that the heat dissipation plate bonding side becomes a convex curved surface during heating for bonding with a plate and restored to a flat plate shape after cooling from a heated state. 【請求項２】 セラミック基台の一方面側に発熱部品を
搭載可能な金属層を有し、他方面側に放熱板に接合可能
な金属層を有する３層構造の放熱板接合用基板であっ
て、当該 放熱板接合用基板は、 前記発熱部品を搭載する側の金属層の部品搭載面を平坦
にすると共に、前記セラミック基台の放熱板側または前
記放熱板に接合可能な金属層の放熱板側を凸状曲面にす
ることにより、 放熱板接合側面全体のみが凸状曲面を呈
することを特徴とする放熱板接合用基板。2. A heat dissipation plate bonding substrate having a three-layer structure, which has a metal layer on one side of which a heat-generating component can be mounted and a metal layer which can be bonded to a heat sink on the other side of the ceramic base. Te, substrate the heat radiating plate junction, flat component mounting surface of the metal layer on the side for mounting the heat generating component
And at the side of the radiator plate of the ceramic base or in front
Make the heat sink side of the metal layer that can be joined to the heat sink a convex curved surface.
By doing so, only the entire side surface of the heatsink joint has a convex curved surface .
A substrate for joining a heat sink, which is characterized by: 【請求項３】 請求項１または請求項２記載の基板であ
って、 当該基板と放熱板との接合をはんだ付けにて行うことを
特徴とする放熱板接合基板。3. The board according to claim 1 or 2, wherein the board and the heat sink are joined by soldering.
JP06876797A 1997-03-21 1997-03-21 Heat sink plate Expired - Fee Related JP3505950B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP06876797A JP3505950B2 (en) 1997-03-21 1997-03-21 Heat sink plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06876797A JP3505950B2 (en) 1997-03-21 1997-03-21 Heat sink plate

Publications (2)

Publication Number Publication Date
JPH10270612A JPH10270612A (en) 1998-10-09
JP3505950B2 true JP3505950B2 (en) 2004-03-15

Family

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Family Applications (1)

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JP (1) JP3505950B2 (en)

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JP4848539B2 (en) * 2001-08-23 2011-12-28 Ｄｏｗａメタルテック株式会社 Heat sink, power semiconductor module, IC package
US6844621B2 (en) 2002-08-13 2005-01-18 Fuji Electric Co., Ltd. Semiconductor device and method of relaxing thermal stress
US20040246682A1 (en) 2003-06-09 2004-12-09 Sumitomo Metal (Smi) Eectronics Devices Inc. Apparatus and package for high frequency usages and their manufacturing method
JP4127166B2 (en) * 2003-09-09 2008-07-30 トヨタ自動車株式会社 Assembling the power module
JP5262408B2 (en) * 2008-08-07 2013-08-14 富士電機株式会社 Positioning jig and method for manufacturing semiconductor device
JP5734125B2 (en) * 2011-07-28 2015-06-10 京セラ株式会社 Cell stack and fuel cell module
JP2015050347A (en) * 2013-09-02 2015-03-16 トヨタ自動車株式会社 Semiconductor device and manufacturing method of the same
CN105874596B (en) * 2014-07-30 2019-03-08 富士电机株式会社 Semiconductor module
JP6422294B2 (en) * 2014-10-07 2018-11-14 昭和電工株式会社 Manufacturing method of electronic module substrate and electronic module substrate
JP6181696B2 (en) * 2015-04-10 2017-08-16 京セラ株式会社 Cell stack and fuel cell module
CN108417501B (en) * 2018-03-05 2020-03-24 台达电子企业管理（上海）有限公司 Power module and preparation method thereof
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