JPH07105433B2 - Wafer processing film attachment method - Google Patents
Wafer processing film attachment methodInfo
- Publication number
- JPH07105433B2 JPH07105433B2 JP11357786A JP11357786A JPH07105433B2 JP H07105433 B2 JPH07105433 B2 JP H07105433B2 JP 11357786 A JP11357786 A JP 11357786A JP 11357786 A JP11357786 A JP 11357786A JP H07105433 B2 JPH07105433 B2 JP H07105433B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- film
- wafer processing
- processing
- hardness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Dicing (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体ウエハの表面にウエハ加工用フイルムを
貼付ける方法に関する。The present invention relates to a method for attaching a wafer processing film to the surface of a semiconductor wafer.
半導体ウエハ表面にウエハ加工用フイルムを貼付ける場
合ウエハより広巾の粘着テープをウエハ表面に貼付け、
その後、ウエハの外周に刃物を当てがって粘着テープを
ウエハ外周に沿って切断する方法、或いはウエハ形状に
形成した粘着テープを貼着した離型性帯状体から粘着テ
ープをウエハ表面に圧着せしめて接着する方法等がとら
れている。When attaching a wafer processing film to the surface of a semiconductor wafer, attach an adhesive tape that is wider than the wafer onto the surface of the wafer.
After that, a tool is applied to the outer circumference of the wafer to cut the adhesive tape along the outer circumference of the wafer, or the adhesive tape formed in a wafer shape is adhered to the surface of the release tape so that the adhesive tape is pressure-bonded to the surface of the wafer. Adhesive method is used.
しかしながらこのような方法の場合、粘着テープをウエ
ハ表面に圧着せしめるため表面に凹凸のあるウエハは破
損し易いという欠点がある。However, in the case of such a method, since the adhesive tape is pressure-bonded to the surface of the wafer, a wafer having unevenness on the surface is easily damaged.
粘着テープを貼付ける際のウエハ破損を防止するため従
来、ウエハ表面の凹凸をクツシヨン効果のあるレジスト
インキ、パラフイン等で埋めた後、粘着テープを貼付け
ている。In order to prevent the wafer from being damaged when the adhesive tape is applied, conventionally, the unevenness of the wafer surface is filled with resist ink, paraffin or the like having a cushioning effect, and then the adhesive tape is applied.
しかしこの方法ではレジストインキ等を塗布した後の乾
燥固化、さらにはウエハ加工後に該レジストインキ等を
加熱下で溶剤を用いて洗浄、除去する工程が必要となり
操作が煩雑になるばかりでなく、有機溶剤を使用するた
め作業環境を悪化させる欠点があり、又レジスト等の使
用にともないこれらによるウエハ表面の汚染の問題もあ
る。However, this method requires a step of drying and solidifying after coating the resist ink and the like, and further washing and removing the resist ink and the like under heating with a solvent after processing, which not only complicates the operation, but also organically. Since a solvent is used, there is a drawback that the working environment is deteriorated, and there is also a problem of contamination of the wafer surface due to the use of a resist or the like.
本発明の目的は半導体ウエハ表面にウエハ加工用フイル
ムの貼付に際し、ウエハ表面に直接加工用フイルムを貼
付けてもウエハの破損が防止できさらに、生産性の向
上、作業環境の向上に寄与ししかもウエハ表面を汚染す
る事のないウエハ加工用フイルムの貼付け方法を提供す
ることにある。The object of the present invention is to prevent the damage of the wafer even when the processing film is directly attached to the surface of the wafer when the processing film is attached to the surface of the semiconductor wafer, and further contributes to the improvement of productivity and the working environment. An object of the present invention is to provide a method for attaching a film for wafer processing which does not contaminate the surface.
本発明者らはウエハ表面の凹凸を埋め、外力を分散させ
る方法として特定の硬度を有する基材フイルムを粘着層
を介してウエハ表面に貼付けることにより貼合せ時のウ
エハ破損を防止できる事を見いだした。更に生産性を向
上させるためウエハ形状に形成したウエハ加工用フイル
ムを貼着した離型性帯状体を用いてウエハ表面に貼付け
る方法に際して、外力を分散できる特定の硬度を有する
基材フイルムだけでは、ウエハ表面に貼付ける際の作業
性が低下する事から特定の硬度を有する補助フイルムを
基材フイルムの粘着層配設面とは反対の面に積層する事
により、フイルム貼付け時のウエハ破損防止効果を低下
される事なく貼付け作業性が大巾に向上される事を見い
だし本発明を完成した。As a method of filling irregularities on the wafer surface and dispersing an external force, the present inventors can prevent a wafer from being damaged at the time of bonding by sticking a base material film having a specific hardness on the wafer surface via an adhesive layer. I found it. In order to further improve the productivity, when using the release strip to which the wafer processing film formed into a wafer shape is attached to the surface of the wafer, it is only necessary to use a base film having a specific hardness to disperse external force. Since the workability at the time of sticking to the wafer surface decreases, an auxiliary film with a certain hardness is laminated on the surface of the base film opposite to the surface where the adhesive layer is placed to prevent wafer damage when sticking the film. The present invention has been completed by finding that the workability of application can be greatly improved without lowering the effect.
すなわち本発明はムエハ形状に形成したウエハ加工用フ
イルムを貼着した離型性帯状体からウエハ加工用フイル
ムを半導体ウエハ表面に圧着せしめて接着する際しシヨ
アＤ型硬度が40以下である基材フイルムの片側表面上に
シヨアＤ型硬度が40より大きい補助フイルムが積層さ
れ、該基材フイルムの他方の表面上に粘着層が配設され
てなるウエハ加工用フイルムを用いることを特徴とする
ウエハ加工用フイルムの貼付け方法である。That is, the present invention is a substrate having a Shore D-type hardness of 40 or less when a wafer processing film is adhered by pressing a wafer processing film from a mold-releasing strip to which a wafer processing film formed in a mueha shape is stuck to a semiconductor wafer surface. A wafer for use in processing a wafer, characterized in that an auxiliary film having a Shore D type hardness of more than 40 is laminated on one surface of the film, and an adhesive layer is provided on the other surface of the base film. This is a method of attaching a processing film.
本発明の対象となるウエハは、シリコンウエハのみなら
ずガリウム−ヒ素、ハリウム−リン、ゲルマニウム等の
ウエハが挙げられ、特に大口径のシリコンウエハに対し
て好適に使用される。Wafers to which the present invention is applicable include not only silicon wafers but also wafers of gallium-arsenic, halium-phosphorus, germanium and the like, and particularly suitable for large-diameter silicon wafers.
本発明で用いる基材フイルムとしては、熱可塑性樹脂、
熱硬化性樹脂、天然ゴムまたは合成ゴムを素材とするも
ので、シヨア−Ｄ型硬度が40以下、好ましくは30以下の
ものであれば各種のフイルムが適宜選択できる。シヨア
−Ｄ型硬度とは、ASTMD-2240によるＤ型シヨア−硬度計
を用いて測定した値である。硬度が40を越えるものの場
合にはウエハに加わる外力を分散させる能力が乏しく、
ウエハ表面への貼付け時の破損を実質的に防止できな
い。As the base film used in the present invention, a thermoplastic resin,
Various films can be appropriately selected as long as they are made of thermosetting resin, natural rubber or synthetic rubber and have a Shore-D type hardness of 40 or less, preferably 30 or less. The Shore D hardness is a value measured by using a D type Shore hardness meter according to ASTM D-2240. If the hardness exceeds 40, the ability to disperse the external force applied to the wafer is poor,
It is not possible to substantially prevent damage at the time of attachment to the wafer surface.
基材フイルムの素材としては、エチレン−酢酸ビニル共
重合体、ポリブタジエン、ポリウレタン、軟質塩化ビニ
ル樹脂、ポリオレフイン、ポリエステル、ポリアミド等
の熱可塑性エラストマー；およびジエン系、ニトリル
系、シリコン系、アクリル系等の合成ゴム等が代表的に
例示される。該基材フイルムの厚みは、保護するウエハ
の材質、形状、表面状態等より適宜選択されるが、通常
10〜2000μｍ程度のものが適当である。As the material for the base film, thermoplastic elastomers such as ethylene-vinyl acetate copolymer, polybutadiene, polyurethane, soft vinyl chloride resin, polyolefin, polyester and polyamide; and diene-based, nitrile-based, silicone-based and acrylic-based Representative examples are synthetic rubbers and the like. The thickness of the base film is appropriately selected depending on the material, shape, surface condition, etc. of the wafer to be protected,
It is suitable that it is about 10 to 2000 μm.
一方、補助フイルムとしては、熱可塑性樹脂、熱硬化性
樹脂、あるいは合成樹脂をラミネートした紙、薄木板等
を素材とするもので、シヨア−Ｄ型硬度が40を越えをも
のであれば各種のフイルムが適宜選択できる。硬度が40
以下のものでは補助フイルムの積層の目的が達成でき
ず、貼合せ時の作業性を改善することができない。On the other hand, the auxiliary film is made of a thermoplastic resin, a thermosetting resin, or a paper laminated with a synthetic resin, a thin wood board, or the like. If the Shore D type hardness exceeds 40, various auxiliary films can be used. The film can be appropriately selected. Hardness 40
The following items cannot achieve the purpose of laminating the auxiliary film and cannot improve workability during lamination.
補助フイルムの素材としては、ポリエチレン、ポリプロ
ピレン、ポリエステル、ポリアミド、硬質塩化ビニル樹
脂、ポリエーテルサルフオン、ポリアクリル、フエノー
ル樹脂等の合成樹脂、あるいはフエノール樹脂を含浸し
た紙、ポリエチレンをコーテイングした紙等が代表的な
ものとして例示される。As the material of the auxiliary film, synthetic resin such as polyethylene, polypropylene, polyester, polyamide, hard vinyl chloride resin, polyether sulfone, polyacryl, phenol resin, or paper impregnated with phenol resin, paper coated with polyethylene, etc. It is exemplified as a typical one.
該補助フイルムの厚みは、ウエハに加工用フイルムを貼
付ける機械の仕様により、また基材フイルムの厚みによ
り適宜選択されるが、通常、10〜1000μｍ程度のものが
適当である。The thickness of the auxiliary film is appropriately selected according to the specifications of the machine for sticking the processing film to the wafer and the thickness of the base film, but usually about 10 to 1000 μm is suitable.
基材フイルムへの補助フイルムの積層方法としては、 予め製造された基材フイルムと補助フイルムのいず
れか片方に接着剤を塗布して重ねて貼り合わせる方法。The method of laminating the auxiliary film on the base film is a method of applying an adhesive to one of the base film and the auxiliary film manufactured in advance, and laminating them together.
２層Ｔダイもしくは２層インフレーシヨンにより同
時押出しにより接着させる方法。A method of adhering by coextrusion with a two-layer T-die or a two-layer inflation.
予め製造された両方のフイルムの接着面にコロナ処
理して接着させる方法。A method of corona-treating and adhering to the adhesive surfaces of both pre-made films.
予め製造された一方のフイルムに他方の樹脂をＴダ
イ法もしくはカレンダー法により積層する方法。A method of laminating one resin produced in advance with the other resin by the T-die method or the calendar method.
等従来公知の各種積層方法が採用できる。Various conventionally known laminating methods such as the above can be adopted.
基材フイルムの表面に設ける粘着層を構成する粘着剤と
しては、例えばアクリル系、エステル系、ウレタン系等
の粘着剤あるいは合成ゴム系粘着剤等の通常の市販され
ている粘着剤が使用できる。粘着層の厚みは、ウエハの
材質、形状、表面状態等により適宜決められるが、通
常、２〜200μｍ程度とするのが好ましい。As the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer provided on the surface of the base film, for example, an ordinary commercially available pressure-sensitive adhesive such as an acrylic-based, ester-based, urethane-based pressure-sensitive adhesive or a synthetic rubber-based pressure-sensitive adhesive can be used. The thickness of the adhesive layer is appropriately determined depending on the material, shape, surface condition, etc. of the wafer, but normally it is preferably about 2 to 200 μm.
粘着剤を基材フイルム表面に積層する方法としては、従
来公知の各種塗布方法、例えばロールコーター法、グラ
ビアロール法、バーコート法、浸漬法、ハケ塗り法、ス
プレー法等が採用でき、基材フイルムの全面もしくは部
分的に塗布することができる。As a method for laminating the pressure-sensitive adhesive on the substrate film surface, various conventionally known coating methods, for example, a roll coater method, a gravure roll method, a bar coating method, a dipping method, a brush coating method, a spray method, and the like can be adopted. The film can be applied to all or part of the film.
実施例1. ASTM D−2240に準じて測定したシヨア−Ｄ型硬度が30で
あるエチレン−酢酸ビニル共重合体樹脂フイルム（200
μｍ厚さ）とシヨア−Ｄ型硬度が80のポリプロピレンフ
イルム（100μｍ厚さ）をアクリル系接着剤“ポンロ
ン”（三井東圧化学（株）製）を用いて接着積層し、エ
チレン−酢酸ビニル共重合体樹脂フイルム面にコロナ放
電処理を施した後、アクリル系粘着剤“アロマテツク
ス”（三井東圧化学（株）製）をロールコーター機によ
り塗布、乾燥して、約50μｍのアクリル系粘着剤層を設
けたウエハ加工用フイルムを作成した。Example 1. An ethylene-vinyl acetate copolymer resin film (200 having a Shore D type hardness of 30 measured according to ASTM D-2240)
μm thickness) and SHORE-D type polypropylene film with a hardness of 80 (100 μm thickness) are adhesively laminated using an acrylic adhesive “Ponron” (manufactured by Mitsui Toatsu Chemicals Co., Ltd.). After subjecting the polymer resin film surface to corona discharge treatment, an acrylic adhesive "Aromatex" (manufactured by Mitsui Toatsu Chemicals, Inc.) is applied by a roll coater machine, dried, and an acrylic adhesive layer of about 50 μm is applied. A wafer processing film provided with was prepared.
このウエハ加工用フイルムを第１図の如く台紙からなる
帯状体上に５インチ径のウエハ状の形成し、一定の間隔
で貼着した。This wafer-processing film was formed into a wafer having a diameter of 5 inches on a strip made of a mount as shown in FIG. 1 and attached at regular intervals.
このフイルムを集積回路が形成された表面の凹凸差が約
10μｍのレジストインキをコートしてないシリコンウエ
ハー表面に自動貼付け機にて100枚貼付けた。このとき
のウエハ破損数は皆無であり、その作業時間は15分であ
った。The unevenness of the surface of the film on which the integrated circuit is formed is about
100 sheets were pasted on the surface of a silicon wafer not coated with 10 μm resist ink by an automatic pasting machine. At this time, there was no wafer damage, and the working time was 15 minutes.
実施例2. シヨア−Ｄ型硬度が20であるブタジエンゴムとシヨア−
Ｄ型硬度が80のポリプロピレンを２層Ｔダイ法にて同時
製膜して得られた２層フイルム（ブタジエンゴム層の厚
さ200μｍ、ポリプロピレン層の厚さ100μｍ）のブタジ
エンゴム面上に、実施例１と同様にして約30μｍ厚みの
アクリル系粘着剤を塗布した実施例１と同様な形状のシ
リコンウエハ加工用フイルムを作成した。このフイルム
を、表面の凹凸差が約30μｍのレジストインクコートし
ていないシリコンウエハ表面に実施例１と同様の方法に
より、100,枚貼付けた。その結果、破損不良品は０であ
り、約15分で全加工作業を完了した。Example 2. Shore D Butadiene rubber having a D-type hardness of 20 and Shore
Conducted on a butadiene rubber surface of a two-layer film (butadiene rubber layer thickness 200 μm, polypropylene layer thickness 100 μm) obtained by simultaneously forming a polypropylene having a D-type hardness of 80 by a two-layer T-die method. In the same manner as in Example 1, a film for processing a silicon wafer having the same shape as in Example 1 was prepared by coating an acrylic adhesive having a thickness of about 30 μm. By the same method as in Example 1, 100 sheets of this film were attached to the surface of a silicon wafer having a surface unevenness difference of about 30 μm and not coated with a resist ink. As a result, the number of defective products was 0, and the entire processing work was completed in about 15 minutes.
比較例−1. シヨア硬度が80のポリエチレンテレフタレートフイルム
（50μｍ厚さ）にコロナ処理を施した後、アクリル系粘
着剤“アロマテツクス”（三井東圧化学（株）製）をロ
ールコーター機により塗布、乾燥し約50μｍのアクリル
系粘着剤層を設けたウエハ加工用フイルムを作成し実施
例１と同様な形状にし、実施例１と同様なシリコンウエ
ハ表面に自動貼付け機にて100枚貼付けた。その結果ウ
エハ破損数は65枚であった。Comparative Example-1 Polyethylene terephthalate film (50 μm thick) having a Shore hardness of 80 is subjected to corona treatment, and then an acrylic adhesive “Aromatex” (manufactured by Mitsui Toatsu Chemicals, Inc.) is applied by a roll coater machine. A film for processing a wafer, which was dried and provided with an acrylic adhesive layer of about 50 μm, was formed into a shape similar to that of Example 1, and 100 sheets were attached to the same silicon wafer surface as in Example 1 by an automatic attaching machine. As a result, the number of broken wafers was 65.
比較例−2. 比較例−１と同様なウエハ加工用フイルムを作成し、表
面凹凸が10μｍのウエハ表面に10μｍのレジストインク
を塗布しウエハ表面の凹凸を無くしてから実施例１と同
様にフイルムを貼付けた。その結果、ウエハの破損は０
であったがその作業時間は２時間を要した。Comparative Example-2: A film for wafer processing similar to that of Comparative Example-1 was prepared, and 10 μm of resist ink was applied to the surface of a wafer having a surface unevenness of 10 μm to eliminate the unevenness of the wafer surface. Pasted. As a result, there is no wafer damage.
However, the working time required 2 hours.
比較例−3. シヨア−Ｄ型硬度が30であるエチレン−酢酸ビニル共重
合体樹脂フイルム単体（厚さ100μｍ）に実施例１と同
様にしてアクリル系粘着剤を塗布乾燥し、ウエハ加工用
フイルムを作成、実施例１と同様な形状にし実施例１と
同様なシリコンウエハ表面に自動貼付け機にて100枚貼
付けた。Comparative Example-3: A Shore-D type ethylene-vinyl acetate copolymer resin film having a hardness of 30 (100 μm in thickness) was coated with an acrylic pressure-sensitive adhesive in the same manner as in Example 1 and dried to prepare a wafer processing film. Was formed into a shape similar to that in Example 1, and 100 sheets were attached to the same silicon wafer surface as in Example 1 by an automatic attaching machine.
その結果、ウエハの破損は０であったものの、フイルム
にシワは発生した。このシワは後工程において悪影響を
及ぼすもので好ましくない。As a result, although the damage to the wafer was 0, the film had wrinkles. This wrinkle adversely affects the subsequent process and is not preferable.
本発明のウエハ加工用フイルム貼付け方法は、基材フイ
ルムがウエハに加わる外力を吸収して分散する性質を有
しているので、ウエハに貼り合わせる時のウエハの破損
を防止できる。また、補助フイルムが積層されているの
で、保形性に優れ、ウエハへの貼合せ時の作業性が非常
に良く、生産性が非常に良く、生産性向上にも大きな効
果が発揮できる。Since the substrate film has the property of absorbing and dispersing the external force applied to the wafer, the method of attaching the film for wafer processing of the present invention can prevent the wafer from being damaged when it is attached to the wafer. Further, since the auxiliary films are laminated, the shape retention is excellent, the workability at the time of bonding to the wafer is very good, the productivity is very good, and the productivity can be greatly improved.
第１図はウエハ加工用フイルムを貼着した離型性帯状体
の一態様を示す平面図、第２図はその正面図である。 １……台紙、２……ウエハ状に形成された加工用フイル
ム、３……補助フイルム、４……基材フイルム、５……
粘着剤。FIG. 1 is a plan view showing an embodiment of a releasable strip to which a wafer processing film is attached, and FIG. 2 is a front view thereof. 1 ... Mount, 2 ... Wafer-shaped processing film, 3 ... Auxiliary film, 4 ... Substrate film, 5 ...
Adhesive.
Claims (1)
ムを貼着した離型性帯状体からウエハ加工用フイルムを
半導体ウエハ表面に圧着せしめて接着する際し、 シヨアＤ型硬度が40以下である基材フイルムの片側表面
上にシヨアＤ型硬度が40より大きい補助フイルムが積層
され、該基材フイルムの他方の表面上に粘着層が配設さ
れてなるウエハ加工用フイルムを用いることを特徴とす
るウエハ加工用フイルムの貼付け方法。1. A D-type hardness of 40 or less when a wafer processing film is adhered by pressure-bonding a wafer processing film to a semiconductor wafer surface from a releasable strip having a wafer-shaped film formed thereon. A wafer processing film comprising an auxiliary film having a Shore D type hardness of greater than 40 laminated on one surface of a substrate film, and an adhesive layer provided on the other surface of the substrate film. A method for attaching a film for wafer processing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11357786A JPH07105433B2 (en) | 1986-05-20 | 1986-05-20 | Wafer processing film attachment method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11357786A JPH07105433B2 (en) | 1986-05-20 | 1986-05-20 | Wafer processing film attachment method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62271451A JPS62271451A (en) | 1987-11-25 |
| JPH07105433B2 true JPH07105433B2 (en) | 1995-11-13 |
Family
ID=14615763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11357786A Expired - Lifetime JPH07105433B2 (en) | 1986-05-20 | 1986-05-20 | Wafer processing film attachment method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07105433B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101581012B1 (en) * | 2014-07-18 | 2015-12-30 | 주식회사 영진비앤비 | the method of applying adhesive for device wafer |
| KR101581009B1 (en) * | 2014-07-18 | 2015-12-30 | 주식회사 영진비앤비 | adhesive sheet adhering apparatus for device wafer |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2541898Y2 (en) * | 1990-08-03 | 1997-07-23 | 日東電工株式会社 | Adhesive tape suitable for diapers, etc. |
| DE19757426A1 (en) * | 1997-12-23 | 1999-07-01 | Beiersdorf Ag | Multi-layer tape |
| US6235387B1 (en) | 1998-03-30 | 2001-05-22 | 3M Innovative Properties Company | Semiconductor wafer processing tapes |
| JP2002033296A (en) * | 2000-04-26 | 2002-01-31 | Lintec Corp | Reinforcing member for silicon wafer, and method for manufacturing ic chip using the reinforcing member |
| JP3880397B2 (en) | 2001-12-27 | 2007-02-14 | 日東電工株式会社 | How to apply and peel off protective tape |
| JP4060641B2 (en) * | 2002-05-22 | 2008-03-12 | 株式会社ディスコ | Tape peeling method |
| TWI310230B (en) * | 2003-01-22 | 2009-05-21 | Lintec Corp | Adhesive sheet, method for protecting surface of semiconductor wafer and method for processing work |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59169811A (en) * | 1983-03-16 | 1984-09-25 | Nitto Electric Ind Co Ltd | Sticking process of adhering film |
| JPS6222439A (en) * | 1985-07-22 | 1987-01-30 | Toshiba Corp | Protective tape for wafer |
-
1986
- 1986-05-20 JP JP11357786A patent/JPH07105433B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59169811A (en) * | 1983-03-16 | 1984-09-25 | Nitto Electric Ind Co Ltd | Sticking process of adhering film |
| JPS6222439A (en) * | 1985-07-22 | 1987-01-30 | Toshiba Corp | Protective tape for wafer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101581012B1 (en) * | 2014-07-18 | 2015-12-30 | 주식회사 영진비앤비 | the method of applying adhesive for device wafer |
| KR101581009B1 (en) * | 2014-07-18 | 2015-12-30 | 주식회사 영진비앤비 | adhesive sheet adhering apparatus for device wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62271451A (en) | 1987-11-25 |
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