JPH0688723A - Interatomic force microscope - Google Patents
Interatomic force microscopeInfo
- Publication number
- JPH0688723A JPH0688723A JP23962592A JP23962592A JPH0688723A JP H0688723 A JPH0688723 A JP H0688723A JP 23962592 A JP23962592 A JP 23962592A JP 23962592 A JP23962592 A JP 23962592A JP H0688723 A JPH0688723 A JP H0688723A
- Authority
- JP
- Japan
- Prior art keywords
- probe
- piezoelectric element
- sample surface
- atomic force
- force microscope
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Length Measuring Devices With Unspecified Measuring Means (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、原子間力を用いて試料
表面を原子オーダの分解能で測定する原子間力顕微鏡に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an atomic force microscope for measuring a sample surface with atomic force using atomic force.
【０００２】[0002]
【従来の技術】近年、半導体用の微細回路素子、光ディ
スク、磁気ディスク等の試料の表面形状を、これら試料
表面を切断することなく、かつ、原子オーダの分解能で
測定する必要が生じてきた。このような形状測定のた
め、原子間力顕微鏡が用いられている。2. Description of the Related Art In recent years, it has become necessary to measure the surface shape of a sample such as a fine circuit element for semiconductors, an optical disk, a magnetic disk, etc., without cutting the surface of the sample and with a resolution of atomic order. An atomic force microscope is used for such shape measurement.
【０００３】図２は従来の原子間力顕微鏡の概略構成を
示す側面図である。図で、１は測定対称となる物体（試
料）、１ａは試料の表面、２は試料１と対向する探針で
ある。３は片持ち梁のレバーであり、一端に探針２を支
持し、他端は支持体４に支持されている。５は探針２の
変位を検出する変位検出器を示す。この変位検出器５に
は、例えばトンネル顕微鏡、光干渉計、光てこ等が用い
られる。なお、その他の付随する構成の図示は省略す
る。FIG. 2 is a side view showing a schematic structure of a conventional atomic force microscope. In the figure, 1 is an object (sample) that is symmetrical to the measurement, 1a is the surface of the sample, and 2 is a probe facing the sample 1. Reference numeral 3 denotes a cantilever lever, which supports the probe 2 at one end and is supported by the support 4 at the other end. Reference numeral 5 denotes a displacement detector that detects the displacement of the probe 2. For the displacement detector 5, for example, a tunnel microscope, an optical interferometer, an optical lever or the like is used. It should be noted that the illustration of other accompanying configurations is omitted.
【０００４】探針２と試料１が微小間隙（ナノメートル
のオーダ）をもって接近すると、探針２の先端を構成す
る原子と試料表面１ａを構成する原子との間に原子間力
（図では斥力Ｆで示されている）が作用し、この結果、
探針２を支持するレバー３が上下方向に変位する。この
変位は変位検出器５で検出される。探針２を試料表面１
ａに沿って相対的に走査し、その走査中の変位検出器５
の検出値をみることにより、試料表面１ａの凹凸を原子
的オーダで測定、観察することができる。When the probe 2 and the sample 1 approach each other with a very small gap (on the order of nanometers), an atomic force (repulsive force in the figure) between the atom forming the tip of the probe 2 and the atom forming the sample surface 1a. (Indicated by F), which results in
The lever 3 supporting the probe 2 is vertically displaced. This displacement is detected by the displacement detector 5. Attach the probe 2 to the sample surface 1
Displacement detector 5 that relatively scans along a
By observing the detected value of, it is possible to measure and observe the unevenness of the sample surface 1a in atomic order.
【０００５】[0005]
【発明が解決しようとする課題】上記原子間力Ｆの大き
さは、ほぼ（１／１０8 ）〜（１／１０9 ）ニュートン
（Ｎ）という微小な値であるので、片持ち梁のレバー３
は、変位検出器５で検出可能な変位を発生させるため
に、曲げ剛性が極度に低くなるように構成しなければな
らない。即ち、上記オーダの原子間力Ｆにより、レバー
３を数ｎｍ〜数μｍたわませる必要があり、このために
は、レバー３の剛性を極度に弱くしなければならないの
は明らかである。Since the magnitude of the interatomic force F is a minute value of approximately (1/10 8 ) to (1/10 9 ) Newton (N), the lever of the cantilever is used. Three
In order to generate the displacement that can be detected by the displacement detector 5, the bending rigidity must be extremely low. That is, it is necessary to bend the lever 3 by several nm to several μm by the atomic force F of the order, and for this purpose, it is obvious that the rigidity of the lever 3 must be extremely weakened.
【０００６】ところで、試料表面１ａの走査は、効率的
な測定を行うためにできるだけ高速で行うことが望まし
い。しかし、図２に示す従来の装置では、上述のように
レバー３の剛性が極めて低いため、高速走査を行った場
合、レバー３が追従しきれなくなるという問題があり、
この面から走査速度が制限されていた。さらに、上記の
ように極度に剛性の低いレバー３は、その製造が容易で
はなく、製造コストを上昇させるという問題もあった。By the way, it is desirable that the scanning of the sample surface 1a is performed as fast as possible in order to perform efficient measurement. However, in the conventional device shown in FIG. 2, since the rigidity of the lever 3 is extremely low as described above, there is a problem that the lever 3 cannot follow up when high speed scanning is performed,
From this aspect, the scanning speed was limited. Further, the lever 3 having extremely low rigidity as described above has a problem that the manufacturing thereof is not easy and the manufacturing cost is increased.
【０００７】本発明の目的は、上記従来技術における課
題を解決し、高速走査が可能であり、かつ、製造容易な
原子間力顕微鏡を提供することにある。An object of the present invention is to solve the above-mentioned problems in the prior art, and to provide an atomic force microscope capable of high-speed scanning and easy to manufacture.
【０００８】[0008]
【課題を解決するための手段】上記の目的を達成するた
め、本発明は、試料表面とこれに微小間隙をもって近接
する探針との間に生じる現象を用いて当該試料表面の形
状を検出する原子間力顕微鏡において、前記探針とこの
探針を支持する支持体との間に、当該探針に作用する力
を検出する微小断面積の圧電素子を介在させたことを特
徴とする。In order to achieve the above object, the present invention detects the shape of a sample surface by using a phenomenon that occurs between the sample surface and a probe that is in close proximity to the sample surface. In the atomic force microscope, a piezoelectric element having a minute cross section for detecting a force acting on the probe is interposed between the probe and a support body supporting the probe.
【０００９】[0009]
【作用】探針と試料表面との間に原子間力が作用すると
圧電素子にも、この力が作用し、この力に比例した電圧
が発生する。結局、この電圧が試料表面の凹凸に対応す
ることになる。剛性の低い片持ち梁のレバーを使用しな
いので、試料表面の高速走査が可能である。When an interatomic force acts between the probe and the sample surface, this force also acts on the piezoelectric element, and a voltage proportional to this force is generated. After all, this voltage corresponds to the unevenness of the sample surface. Since a cantilever lever with low rigidity is not used, high-speed scanning of the sample surface is possible.
【００１０】[0010]
【実施例】以下、本発明を図示の実施例に基づいて説明
する。図１は本発明の実施例に係る原子間力顕微鏡の概
略構成を示す側面図である。図１で、１は試料、１ａは
試料表面を示し、これらは図２に示すものと同じであ
る。１０は探針、１１は探針１０を支持する支持体であ
る。１２は探針１０と支持体１１との間に固定された微
小断面積を有する圧電素子である。なお、図で、圧電素
子１２の厚さは極端に誇張して描かれている。１２ａ、
１２ｂは圧電素子１２の両面の電極を示す。圧電素子１
２には酸化亜鉛（ＺｎＯ）の薄膜が用いられ、この薄膜
は、各電極１２ａ、１２ｂとともに薄膜プロセス技術に
より形成される。The present invention will be described below with reference to the illustrated embodiments. FIG. 1 is a side view showing a schematic configuration of an atomic force microscope according to an embodiment of the present invention. In FIG. 1, 1 is a sample, 1a is a sample surface, and these are the same as those shown in FIG. Reference numeral 10 is a probe, and 11 is a support body that supports the probe 10. Reference numeral 12 is a piezoelectric element having a minute cross-sectional area fixed between the probe 10 and the support 11. Note that the thickness of the piezoelectric element 12 is extremely exaggerated in the drawing. 12a,
Reference numeral 12b indicates electrodes on both surfaces of the piezoelectric element 12. Piezoelectric element 1
A thin film of zinc oxide (ZnO) is used for 2, and this thin film is formed by the thin film process technology together with the electrodes 12a and 12b.
【００１１】探針１０を試料表面１ａに微小間隙をもっ
て接近させると、前述のように原子間力Ｆが作用する。
この原子間力Ｆは探針１０から圧電素子１２に伝達さ
れ、圧電素子１２の各電極１２ａ、１２ｂ間に、当該原
子間力Ｆに応じた電圧Ｖout が発生する。When the probe 10 is brought close to the sample surface 1a with a minute gap, the atomic force F acts as described above.
This atomic force F is transmitted from the probe 10 to the piezoelectric element 12, and a voltage V out according to the atomic force F is generated between the electrodes 12a and 12b of the piezoelectric element 12.
【００１２】ここで、Ｌを圧電素子１２の厚さ、Ｇを力
−電界変換係数、Ｔを圧電素子１２に作用する応力とす
ると、上記電圧Ｖout は、 Ｖout ＝Ｌ・Ｇ・Ｔ ……………………（１） で表される。圧電素子１２が酸化亜鉛で構成されている
場合、係数Ｇは約（１３５／１０3）Ｖ・ｍ／Ｎ であ
る。、Ｌ＝２μｍ、圧電素子１２の断面を（１×１）μ
ｍとすると、原子間ＦをＦ＝１／１０8Ｎとした場合、
応力Ｔは、Ｆ／断面積となり、Ｖout は０．００２７Ｖ
となる。この程度の出力電圧は簡単な装置で検出可能で
ある。Here, where L is the thickness of the piezoelectric element 12, G is the force-electric field conversion coefficient, and T is the stress acting on the piezoelectric element 12, the above voltage V out is V out = L · G · T. ………………… (1) When the piezoelectric element 12 is made of zinc oxide, the coefficient G is about (135/10 3 ) V · m / N 2. , L = 2 μm, the cross section of the piezoelectric element 12 is (1 × 1) μ
If the interatomic F is F = 1/10 8 N,
The stress T becomes F / cross-sectional area, and V out is 0.0027V
Becomes An output voltage of this level can be detected with a simple device.
【００１３】このように、本実施例では、探針１０とそ
の支持体１１との間に圧電素子１２を固定し、探針１０
と試料表面１ａとの間に作用する原子間力を圧電素子１
２に伝達し、圧電素子１２の出力で原子間力を検出する
ようにしたので、探針１０を高い剛性で支持することが
でき、これにより高速走査を実現することができる。
又、剛性の極度に低いレバーを用いる必要がないので、
製造容易であり、特に圧電素子１２に酸化亜鉛の薄膜を
用いたので、圧電素子１２を薄膜プロセスで構成するこ
とができ、この面でも製造容易となり、製造コストを低
減することができる。As described above, in the present embodiment, the piezoelectric element 12 is fixed between the probe 10 and its support 11, and the probe 10 is fixed.
Between the atomic force acting between the piezoelectric element 1 and the sample surface 1a
2 and the atomic force is detected by the output of the piezoelectric element 12, so that the probe 10 can be supported with high rigidity and high-speed scanning can be realized.
Also, since it is not necessary to use a lever with extremely low rigidity,
It is easy to manufacture, and since the thin film of zinc oxide is used for the piezoelectric element 12, the piezoelectric element 12 can be formed by a thin film process, which also facilitates the manufacturing and reduces the manufacturing cost.
【００１４】なお、上記実施例の説明では、圧電素子１
２に酸化亜鉛の薄膜を用いる例について説明したが、圧
電素子１２には他の適宜の材料を用い、適宜の手段で構
成することもできる。In the description of the above embodiment, the piezoelectric element 1
Although the example in which the thin film of zinc oxide is used for 2 has been described, the piezoelectric element 12 may be made of another appropriate material and configured by an appropriate means.
【００１５】[0015]
【発明の効果】以上述べたように、本発明では、探針の
変位を圧電素子により検出するようにしたので、剛性が
極度に低い片持ち梁のレバーを用いる必要はなく、これ
により、高速走査を行うことができ、又、製造も容易と
なり、製造コストを低減することができる。As described above, according to the present invention, since the displacement of the probe is detected by the piezoelectric element, it is not necessary to use a cantilever lever whose rigidity is extremely low. Scanning can be performed, manufacturing is facilitated, and manufacturing cost can be reduced.
【図１】本発明の実施例に係る原子間力顕微鏡の概略構
成を示す側面図である。FIG. 1 is a side view showing a schematic configuration of an atomic force microscope according to an embodiment of the present invention.
【図２】従来の原子間力顕微鏡の概略構成を示す側面図
である。FIG. 2 is a side view showing a schematic configuration of a conventional atomic force microscope.
１ 試料 １ａ 試料表面 １０ 探針 １１ 支持体 １２ 圧電素子 １２ａ、１２ｂ 電極 1 Sample 1a Sample surface 10 Probe 11 Support 12 Piezoelectric element 12a, 12b Electrode
Claims (3)
する探針との間に生じる現象を用いて当該試料表面の形
状を検出する原子間力顕微鏡において、前記探針とこの
探針を支持する支持体との間に、当該探針に作用する力
を検出する微小断面積の圧電素子を介在させたことを特
徴とする原子間力顕微鏡。1. An atomic force microscope that detects the shape of a sample surface by using a phenomenon that occurs between the sample surface and a probe that is in close proximity to the sample surface, and supports the probe and the probe. An atomic force microscope characterized in that a piezoelectric element having a minute cross section for detecting a force acting on the probe is interposed between the support and the support.
化亜鉛の薄膜であることを特徴とする原子間力顕微鏡。2. The atomic force microscope according to claim 1, wherein the piezoelectric element is a thin film of zinc oxide.
さおよび断面の各方向の寸法が１／１０7 〜１／１０6
であることを特徴とする原子間力顕微鏡。3. The piezoelectric element according to claim 1, wherein the piezoelectric element has a thickness and a cross-sectional dimension in each direction of 1/10 7 to 1/10 6.
Atomic force microscope.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23962592A JPH0688723A (en) | 1992-09-08 | 1992-09-08 | Interatomic force microscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23962592A JPH0688723A (en) | 1992-09-08 | 1992-09-08 | Interatomic force microscope |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0688723A true JPH0688723A (en) | 1994-03-29 |
Family
ID=17047509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23962592A Pending JPH0688723A (en) | 1992-09-08 | 1992-09-08 | Interatomic force microscope |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0688723A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6989535B2 (en) | 1998-11-20 | 2006-01-24 | Hitachi, Ltd. | Atomic force microscopy, method of measuring surface configuration using the same, and method of producing magnetic recording medium |
-
1992
- 1992-09-08 JP JP23962592A patent/JPH0688723A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6989535B2 (en) | 1998-11-20 | 2006-01-24 | Hitachi, Ltd. | Atomic force microscopy, method of measuring surface configuration using the same, and method of producing magnetic recording medium |
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