JPH0673354B2 - Wiring forming method and device - Google Patents
Wiring forming method and deviceInfo
- Publication number
- JPH0673354B2 JPH0673354B2 JP62283412A JP28341287A JPH0673354B2 JP H0673354 B2 JPH0673354 B2 JP H0673354B2 JP 62283412 A JP62283412 A JP 62283412A JP 28341287 A JP28341287 A JP 28341287A JP H0673354 B2 JPH0673354 B2 JP H0673354B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- substrate
- laser light
- light source
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、レーザ光を利用する配線形成方法及び装置に
関する。TECHNICAL FIELD The present invention relates to a wiring forming method and apparatus using laser light.
［従来の技術］ 近年、半導体製造プロセスにおいては、レーザを利用し
た薄膜形成法が、プロセスの低温化、マスクレスプロセ
スによる工程短縮などをもたらすものとして盛んに研究
開発が行なわれている。中でも金属や高導電性の半導体
を気相化学反応により直接線状に堆積させる直接描画技
術は、LSIの設計から試作に至る開発期間を大幅に短縮
する高速配線修正を始め、カスタムLSI製造における配
線形成工程など、将来の配線形成技術の重要なプロセス
技術に応用できるものと期待されている。[Prior Art] In recent years, in the semiconductor manufacturing process, research and development have been vigorously carried out as a method of forming a thin film using a laser brings about a lower temperature of the process and a shortening of the process by a maskless process. Among them, the direct writing technology that directly deposits metals and highly conductive semiconductors in a linear form by a gas-phase chemical reaction, including high-speed wiring correction that significantly shortens the development period from LSI design to trial manufacture, and wiring in custom LSI manufacturing It is expected to be applicable to important process technologies for future wiring formation technology such as the formation process.
このレーザを利用する直接描画技術では、導電性物質の
堆積に、集光照射されたレーザ光による基板もしくは、
堆積した物質の加熱による原料ガスの熱分解反応を主に
利用している。この方法の他に、紫外レーザ光を用いた
光化学反応による導電性物質の堆積方法もあるが、この
方法では、CdやZn等の化学的耐久性に乏しい金属しか良
好な導電性材料の堆積が実現されておらず、この方法を
実際のLSIプロセスに適用することは困難である。そこ
で、前者の熱分解反応を用いる方法がもっぱら用いられ
ており、いったん堆積した導電性材料がレーザ光を吸収
して生じる発熱による熱分解反応を利用して、レーザ光
の走査方向に堆積を延ばすことによって配線を形成して
いた。これまでに、ポリSiなどの導電性半導体や、W,Mo
等の低抵抗な高融点金属の堆積が実現されている。たと
えば、ジャーナル オブ アブライド フィジックス(J
ournal of Applied Physics)の第62巻673〜675ページに
ツアング(Zhang)等により、光源にKrレーザ、原料ガス
にWF6を用い、低抵抗なＷ線を直接描画した例が報告さ
れている。この論文によれば、ガラス上にa-Siを1200オ
ングストロームの厚さにつけて基板上に直描を行ない、
バルク値の1.3倍程度の非常に低抵抗な膜を堆積できる
ことが報告されている。In the direct writing technology using this laser, the substrate by the laser light focused and irradiated to deposit the conductive substance, or
It mainly uses the thermal decomposition reaction of the source gas by heating the deposited material. In addition to this method, there is also a method of depositing a conductive substance by a photochemical reaction using an ultraviolet laser beam, but with this method, deposition of a conductive material that is only a metal with poor chemical durability such as Cd or Zn can be deposited. It has not been realized and it is difficult to apply this method to the actual LSI process. Therefore, the former method using the thermal decomposition reaction is exclusively used, and the thermal decomposition reaction due to the heat generated by the once deposited conductive material absorbing the laser light is used to extend the deposition in the scanning direction of the laser light. Thus, the wiring was formed. So far, conductive semiconductors such as poly-Si, W, Mo
A low-melting-point refractory metal such as a metal has been deposited. For example, Journal of Abride Physics (J
In ournal of Applied Physics, Vol. 62, pages 673 to 675, Zhang et al. reported an example in which a Kr laser was used as a light source and WF 6 was used as a source gas, and a low resistance W line was directly drawn. According to this paper, a-Si is applied on glass to a thickness of 1200 angstrom and directly drawn on the substrate.
It has been reported that it is possible to deposit a film having a very low resistance of about 1.3 times the bulk value.
［発明が解決しようとする問題点］ この論文を含む従来の直接描画技術では、描画を行なう
基板の表面は平坦で、その上に直接配線を描画してい
た。このため、配線の幅と厚みが相互に関連して変化す
るレーザ直描の基本的性質のために、微細化のための線
幅の低減と低抵抗化のための厚膜化を両立させることが
困難であるという問題があった。すなわち、微細な配線
パターンを描くために線幅を細くできる条件では膜の厚
みが薄くなり、逆に低抵抗の配線を得るために膜厚を厚
くする条件では線幅が広がるというトレードオフを生ず
る問題があった。例えば、先に紹介した論文では、配線
の厚み及び線幅は、レーザ光照射強度と共に増加するこ
とが示され、最小の線幅２μｍを得る条件では膜厚は10
00オングストローム前後と薄く、逆に厚みが１μｍと厚
くなる条件では、線幅が７μｍ程度と広がることが記述
されている。[Problems to be Solved by the Invention] In the conventional direct writing technique including this paper, the surface of the substrate on which the writing is performed is flat, and the wiring is directly drawn on it. For this reason, both the reduction in line width for miniaturization and the increase in film thickness for low resistance are achieved because of the basic properties of laser direct writing in which the width and thickness of wiring change in relation to each other. There was a problem that it was difficult. That is, there is a trade-off that the film thickness becomes thin under the condition that the line width can be reduced to draw a fine wiring pattern, and conversely the line width increases under the condition that the film thickness is increased to obtain a low resistance wiring. There was a problem. For example, in the paper introduced above, it was shown that the thickness and line width of the wiring increase with the laser beam irradiation intensity, and the film thickness is 10 when the minimum line width of 2 μm is obtained.
It is described that the line width widens to about 7 μm under the condition that the thickness is as thin as around 00 Å and the thickness is as thick as 1 μm.
現在、一括成膜・マスクプロセスを用いる通常のLSI製
造工程に用いられているAl配線では、線幅１μｍに対し
厚み0.6μｍ以上の配線が主として用いられており、レ
ーザ直描技術においても、これに近い厚み線幅比を得る
ことが実用上の大きな課題となっている。At present, the Al wiring used in the normal LSI manufacturing process using the batch film formation / mask process mainly uses a wiring having a thickness of 0.6 μm or more with respect to a line width of 1 μm. A practical issue is to obtain a thickness-width ratio close to.
また、従来の直接描画技術では、形成した配線の断面形
状は、中心部が盛り上がり、裾にいくほど膜厚が薄くな
る山形の形状になるために、通常のLSI製造プロセスで
得られる矩形状の配線に比べ、膜の抵抗率・厚み・線幅
が同じ場合でも断面積の違いにより配線抵抗値が高くな
る欠点を持っていた。Moreover, in the conventional direct drawing technology, the cross-sectional shape of the formed wiring has a mountain shape in which the central portion rises and the film thickness becomes thinner toward the hem. Compared to wiring, even if the film has the same resistivity, thickness, and line width, it has the drawback that the wiring resistance increases due to the difference in cross-sectional area.
本発明の目的は従来の方法及び装置では困難とされてい
た細い線幅でかつ厚い配線の直接描画を可能ならしめ、
堆積した膜の断面形状を矩形に近い形状に制御しうる配
線形成方法及び装置を提供することにある。The object of the present invention is to enable direct drawing of thin line width and thick wiring, which has been difficult with the conventional method and apparatus,
An object of the present invention is to provide a wiring forming method and device capable of controlling the cross-sectional shape of a deposited film to have a shape close to a rectangle.
［問題点を解決するための手段］ 上記目的を達成するために、本発明は、化学反応により
導電性物質を堆積する原料気体を含む雰囲気中に置かれ
た基板上に、レーザ光を集光照射し、前記レーザ光を前
記基板に対し相対的に走査することにより配線を描画す
る配線形成方法において、前記基板上に前記配線を形成
する前に前記配線を形成すべき箇所に、パルスレーザ光
を照射して、前記基板上の絶縁膜の上層部に溝を形成
し、次いで、前記溝の上に前記レーザ光を集光照射して
配線を形成するようにしたものである。[Means for Solving the Problems] In order to achieve the above object, the present invention condenses a laser beam on a substrate placed in an atmosphere containing a raw material gas for depositing a conductive substance by a chemical reaction. In a wiring forming method of drawing wiring by irradiating and scanning the laser light relative to the substrate, pulsed laser light is applied to a portion where the wiring is to be formed before forming the wiring on the substrate. Is irradiated to form a groove in the upper layer portion of the insulating film on the substrate, and then the laser beam is condensed and irradiated onto the groove to form a wiring.
また、上記目的を達成するために、本発明は、第１のレ
ーザ光源と、窓を備えたチェンバーと、前記第１のレー
ザ光源の出射光を前記窓を介して、前記チェンバー内の
基板上に集光照射する光学系と、前記第１のレーザ光源
からの光照射によって前記基板上に起こる化学反応によ
り導電性物質を堆積する原料気体を前記チェンバーに供
給する原料気体供給ユニットと、前記チェンバー内に前
記基板を保持する機構と、前記基板に対してレーザ光の
照射位置を走査するＸ−Ｙステージとを備える配線形成
装置において、前記出射光を前記基板上に集光して前記
基板上に溝を形成する第２のレーザ光源と、前記基板上
の配線を形成すべき箇所に前記第２のレーザ光源からの
出射光を照射しながら前記Ｘ−Ｙステージを走査した後
に、前記チェンバーへ前記原料気体を供給し、前記第１
のレーザ光源からの前記出射光を前記配線を形成すべき
箇所に照射しながら前記Ｘ−Ｙステージを走査させるよ
うに前記第１のレーザ光源及び前記第２のレーザ光源か
らの光照射のタイミング、及び、前記Ｘ−Ｙステージの
走査及び前記原料気体供給ユニットの動作を制御する制
御ユニットとを設けたものである。Further, in order to achieve the above object, the present invention provides a first laser light source, a chamber having a window, and light emitted from the first laser light source through a window on a substrate in the chamber. An optical system for converging and irradiating light on the substrate, a source gas supply unit for supplying a source gas for depositing a conductive substance to the chamber by a chemical reaction occurring on the substrate by the light irradiation from the first laser light source, and the chamber In a wiring forming apparatus including a mechanism for holding the substrate therein, and an XY stage for scanning the irradiation position of the laser light on the substrate, the emitted light is condensed on the substrate, and A second laser light source that forms a groove in the chamber, and the chamber on which the XY stage is scanned while irradiating the light on the substrate where the wiring is to be formed with the light emitted from the second laser light source. The raw material gas supplied to the first
Timing of light irradiation from the first laser light source and the second laser light source so as to scan the XY stage while irradiating the place where the wiring is formed with the emitted light from the laser light source of And a control unit for controlling the scanning of the XY stage and the operation of the raw material gas supply unit.
［作用・原理］ 本発明の特徴は、配線の直接描画を行なう前にあらかじ
め配線を形成する箇所に溝を掘っておき、その後、原料
ガスを満たした雰囲気中でこの溝上にレーザ光を走査し
て配線を形成することにある。この溝の幅は、形成しよ
うとする配線の線幅と同じ程度とし、溝の深さは、所要
の厚みと同程度もしくはそれよりも深くする。このよう
な溝を形成した上で、原料ガス雰囲気中でレーザ光をこ
の溝の上に集光し、溝に沿ってレーザ光を走査すれば、
この溝の中に埋め込まれる形で配線を形成できる。本発
明によれば、細い線幅でかつ厚い配線を形成できる理由
を以下に説明する。[Operation / Principle] The feature of the present invention is that a groove is previously formed in a place where a wiring is formed before direct drawing of the wiring, and then the groove is scanned with a laser beam in an atmosphere filled with a raw material gas. To form wiring. The width of this groove is approximately the same as the line width of the wiring to be formed, and the depth of the groove is approximately the same as or deeper than the required thickness. After forming such a groove, if the laser light is focused on this groove in the source gas atmosphere and the laser light is scanned along the groove,
The wiring can be formed so as to be embedded in the groove. According to the present invention, the reason why the thin line width and the thick wiring can be formed will be described below.
従来の技術の説明の箇所で述べたように、現在レーザ光
による直接描画技術の主流は、レーザ光の集光照射によ
る基板の局所加熱による原料ガスの熱分解反応を利用す
る手法である。この手法で平坦な基板上に配線を形成す
る場合、配線の幅は照射するレーザ光のビーム径に依存
し、配線幅がμｍサイズになると照射するレーザ光のビ
ーム径よりも広がる傾向がある。この要因としては、基
板表面の熱拡散による周辺部の加熱に伴う熱分解反応領
域の広がり、基板と配線材料の濡れにもとづく横方向へ
の膜の成長の促進、ならびに熱分解時に発生する堆積の
核となる物質の拡散，付着などが考えられる。これらの
要因は、基板材料や堆積する物質の性質に直接関係して
いるために、種々の絶縁材料が使用されるLSI上で、レ
ーザビーム径からの配線幅の広がりを常に押さえること
は難しい。As described in the section of the description of the conventional technique, the mainstream of the direct writing technique by laser light at present is a method of utilizing a thermal decomposition reaction of a source gas by local heating of a substrate by converging irradiation of laser light. When a wiring is formed on a flat substrate by this method, the width of the wiring depends on the beam diameter of the laser beam to be irradiated, and when the wiring width becomes μm, it tends to be wider than the beam diameter of the laser beam to be irradiated. This is due to the expansion of the thermal decomposition reaction region due to the heating of the peripheral area due to the thermal diffusion of the substrate surface, the promotion of the lateral film growth due to the wetting of the substrate and the wiring material, and the accumulation of deposition that occurs during thermal decomposition. Diffusion and adhesion of the core material can be considered. Since these factors are directly related to the properties of the substrate material and the deposited substance, it is difficult to constantly suppress the spread of the wiring width from the laser beam diameter on the LSI in which various insulating materials are used.
これに対し、本発明のように、基板上の絶縁膜に溝を堀
り、この溝の中にレーザ光を集光照射すれば、レーザ光
の集光により加熱される箇所は、溝の中心部に集中し、
その熱の基板表面への拡散は溝の側面を通って伝わるた
めに、平坦な基板上に直描させる場合に比べ、横方向へ
の熱拡散がはるかに少なくなり、その結果、溝上部への
堆積を防止し、配線幅の広がりを襲えることができる。
また、基板と配線との濡れによる広がりも溝の側面を伝
わる間は、線幅の広がりが押さえられること、並びに核
の拡散の点からも、溝の中で発生する核の拡散は平坦な
部分からの拡散に比べ、溝の中に滞留し易いと考えられ
る。これらのことから、本発明の溝の中に配線を埋め込
みながら直描する方法が細い線幅を得る上で有効な方法
であることがわかる。以上のことは、直描配線の厚膜化
の点でも有効である。つまり、溝の中心部にレーザ光が
集光されるので膜の成長は最初溝の底面方向に伸び、溝
の側面に届いた後は、溝の側面をはい上がって成長が進
む。この結果平坦な基板上では山形になる断面形状が、
本発明によれば、横への成長が途中で遮られるために、
溝を埋め込むかたちで成長が進み、結果として、溝の形
状により直描配線の形状を制御することが可能となり、
溝の形状が矩形であれば、直描配線の形状を矩形にする
こともできる。On the other hand, as in the present invention, when a groove is formed in the insulating film on the substrate and the laser light is focused and irradiated in the groove, the portion heated by the focus of the laser light is at the center of the groove. Concentrate on the department
Since the diffusion of the heat to the substrate surface is transmitted through the side surface of the groove, the heat diffusion in the lateral direction is much smaller than that in the case of directly drawing on the flat substrate, and as a result, the heat is diffused to the upper part of the groove. It is possible to prevent the accumulation and prevent the wiring width from spreading.
In addition, the spread of the line width is suppressed while the spread due to the wetting of the substrate and the wiring is transmitted along the side surface of the groove, and from the viewpoint of the diffusion of the core, the diffusion of the core generated in the groove is flat. It is considered that they are more likely to stay in the groove as compared with diffusion from. From these, it is understood that the method of directly drawing while embedding the wiring in the groove of the present invention is an effective method for obtaining a narrow line width. The above is also effective in terms of increasing the thickness of the direct drawing wiring. That is, since the laser light is focused on the central portion of the groove, the growth of the film first extends in the bottom surface direction of the groove, and after reaching the side surface of the groove, the film rises up the side surface of the groove and the growth proceeds. As a result, the cross-sectional shape that becomes a mountain on a flat substrate is
According to the present invention, because lateral growth is interrupted on the way,
Growth progresses in the form of filling the groove, and as a result, it becomes possible to control the shape of the direct drawing wiring by the shape of the groove.
If the shape of the groove is rectangular, the shape of the direct drawing wiring may be rectangular.
［実施例］ 以下図面を用いて本発明を詳細に説明する。第１図は本
発明による実施例に用いられる配線形成装置の構成図で
ある。実施例はポリSi配線層を持つSiウエハの上にSiN
とポリイミドからなる絶縁層が形成された基板５上に、
Mo線を直接描画して配線を形成した例である。Arレーザ
で構成される第１のレーザ光源８からの出射光はミラー
10で反射され、次に合成ミラー11で、Q-SW Nd:YAGレー
ザの第２高調波光源からなる第２のレーザ光源９からの
出射光と合成され、さらにレンズ３、窓２を通ってチェ
ンバー６の中の基板５に集光照射される。このとき第２
のレーザ光源９からの出射光も基板５上に集光照射され
る。Mo線を堆積する原料気体は、Mo(Co)6で、原料気体
供給ユニット１から、Arガスで希釈されてチェンバー６
に供給される。排気ユニット７は、チェンバー６内に基
板５を装着した後の残留気体の排気、及び基板５の取り
だし時の原料気体の排気に用いる。チェンバー６内の圧
力は１気圧で、基板５に溝を掘る時はArガスが満たさ
れ、配線を形成する時は原料気体が満たされる。これら
チェンバー６へのガス導入、第１のレーザ光源８及び第
２のレーザ光源９のレーザ光の出射タイミング、及びＸ
−Ｙステージ４の走査は、制御ユニット12により以下の
手順で制御する。EXAMPLES The present invention will be described in detail below with reference to the drawings. FIG. 1 is a configuration diagram of a wiring forming apparatus used in an embodiment according to the present invention. Example shows SiN on a Si wafer with a poly-Si wiring layer.
And on the substrate 5 on which the insulating layer made of polyimide is formed,
In this example, Mo lines are directly drawn to form wiring. The light emitted from the first laser light source 8 composed of an Ar laser is a mirror.
The light is reflected by 10, and then is combined by the combining mirror 11 with the light emitted from the second laser light source 9 which is the second harmonic light source of the Q-SW Nd: YAG laser, and further passes through the lens 3 and the window 2. The substrate 5 in the chamber 6 is focused and irradiated. At this time the second
Light emitted from the laser light source 9 is also focused and irradiated on the substrate 5. The source gas for depositing the Mo wire is Mo (Co) 6 , which is diluted with Ar gas from the source gas supply unit 1 and the chamber 6
Is supplied to. The exhaust unit 7 is used for exhausting the residual gas after the substrate 5 is mounted in the chamber 6 and exhausting the source gas when the substrate 5 is taken out. The pressure inside the chamber 6 is 1 atm, and is filled with Ar gas when digging a groove in the substrate 5 and with source gas when forming wiring. Gas introduction into these chambers 6, laser light emission timings of the first laser light source 8 and the second laser light source 9, and X
The scanning of the Y stage 4 is controlled by the control unit 12 in the following procedure.
あらかじめ、配線したい箇所のポリSi上の絶縁膜にバイ
アホールを開けた基板５を用意し、チェンバー６内の所
定の位置に保持する。次にチェンバー６内の空気を排気
ユニット７で排気し、チェンバー６内にArガスを流しな
がら、Ｘ−Ｙステージ４を動かして基板５の配線を形成
する箇所の一端に第２のレーザ光源の照射位置を合わせ
た後、第２のレーザ光源９からレーザ光を出射し、それ
と同時にＸ−Ｙステージ４を配線を形成する方向に走査
させて溝を形成する。溝の形成が終了したら第２のレー
ザ光源９からのレーザ光の出射を止める。In advance, a substrate 5 having via holes formed in an insulating film on poly-Si where wiring is desired is prepared and held at a predetermined position in a chamber 6. Next, the air in the chamber 6 is exhausted by the exhaust unit 7, and while Ar gas is allowed to flow in the chamber 6, the XY stage 4 is moved to move one end of the second laser light source of the second laser light source to one end where the wiring of the substrate 5 is formed. After adjusting the irradiation position, laser light is emitted from the second laser light source 9, and at the same time, the XY stage 4 is scanned in the wiring forming direction to form a groove. When the formation of the groove is completed, the emission of the laser light from the second laser light source 9 is stopped.
次に、原料ガス供給ユニット１より原料気体をチェンバ
ー６に導入し、第１のレーザ光源８からレーザ光を出射
しながらＸ−Ｙステージ４を形成した溝に沿って走査し
てMoを溝の中に埋め込みながら配線を形成して、配線形
成の一連の作業を終える。Next, a raw material gas is introduced into the chamber 6 from the raw material gas supply unit 1, and a laser beam is emitted from the first laser light source 8 while scanning along the groove in which the XY stage 4 is formed, so that Mo is removed from the groove. Wiring is formed while embedding it inside, and a series of work for wiring formation is completed.
溝の形成には、第２のレーザ光源９より発生する高強度
のパルスレーザ光による絶縁膜の蒸散作用を利用してい
る。この絶縁膜構成では、下側のSiNに比べ、ポリイミ
ド膜の方が加工の起こる閾照射強度が低いので、第２の
レーザ光源９の照射強度をポリイミド膜のみに加工の起
こる照射強度に設定することにより、基板５上のポリイ
ミド膜にのみ溝を形成することができ、その結果矩形の
断面形状を持つ溝を掘ることができた。The evaporation of the insulating film by the high-intensity pulsed laser light generated from the second laser light source 9 is used for forming the groove. In this insulating film structure, the threshold irradiation intensity of the polyimide film is lower than that of SiN on the lower side. Therefore, the irradiation intensity of the second laser light source 9 is set to the irradiation intensity of the processing only on the polyimide film. As a result, the groove can be formed only in the polyimide film on the substrate 5, and as a result, the groove having a rectangular cross-sectional shape can be dug.
次に得られた結果を、従来の平坦な基板５上に直接描画
して配線を形成した場合と比較して説明する。基板５上
の第１のレーザ光源８及び第２のレーザ光源９からの出
射光のスポットサイズは、おのおの１μｍ及び1.5μｍ
である。また基板５のポリイミド及びSiN膜の厚みは、
それぞれ１μm,1.3μｍである。溝を形成した条件は、
パルス幅40nsのレーザパルスを照射強度10MW/cm2、Ｘ−
Ｙステージの走査速度は50μm/s、レーザパルスの繰り
返しは10KHzである。直描配線時のMo(Co)6の濃度は5Tor
r、Ｘ−Ｙステージの走査速度は10μm/sである。レーザ
光の照射強度は、1MW/cm2から5MW/cm2の間で変化させ
た。この条件で溝のない平坦な基板上配線を形成したと
ころ、最小の線幅として、２μｍが得られたがその時の
膜厚は600オングストロームと薄く配線としては薄過ぎ
るという実験結果が得られた。一方、膜厚を0.5μｍと
厚くすると線幅は４μｍに広がるという結果が得られ
た。この線幅と膜厚の関係は原料気体の濃度や、照射強
度、走査速度を変化させてもほとんど変化はなく、平坦
な基板上にそのまま描画する方法では配線として求めら
れるμｍサイズの細くかつ厚い配線を得ることは困難で
あった。Next, the obtained results will be described in comparison with the case where the wiring is formed by directly drawing on the conventional flat substrate 5. The spot sizes of the light emitted from the first laser light source 8 and the second laser light source 9 on the substrate 5 are 1 μm and 1.5 μm, respectively.
Is. The thickness of the polyimide and SiN film of the substrate 5 is
They are 1 μm and 1.3 μm, respectively. The conditions for forming the groove are
Irradiation intensity of 10 MW / cm 2 , X-
The scanning speed of the Y stage is 50 μm / s, and the repetition of the laser pulse is 10 KHz. Mo (Co) 6 concentration is 5 Tor during direct wiring
The scanning speed of the r and XY stages is 10 μm / s. The irradiation intensity of the laser light was changed between 1 MW / cm 2 and 5 MW / cm 2 . When a flat wiring on a substrate having no groove was formed under these conditions, a minimum line width of 2 μm was obtained, but the film thickness at that time was as thin as 600 Å, and an experimental result that the wiring was too thin was obtained. On the other hand, when the film thickness was increased to 0.5 μm, the line width was expanded to 4 μm. The relationship between the line width and the film thickness hardly changes even when the concentration of the raw material gas, the irradiation intensity, and the scanning speed are changed, and in the method of drawing as it is on a flat substrate, the thin and thick μm size required for wiring is required. It was difficult to get the wiring.
一方、基板５上に溝を堀った後、配線の描画した場合に
は以下のように優れた特性が得られた。得られた溝の形
状は幅1.2μｍで深さはポリイミドの厚みと同じ１μｍ
であり、ほぼ矩形の溝を形成できた。この溝を照射強度
4MW/cm2で配線を埋め込んだところ、堆積した膜が溝の
上にはみだすことなく、0.8μｍの厚みで溝を埋める形
で配線を形成できた。また得られた膜の抵抗率はバルク
値の1.5倍と低く一括プロセスを用いる通常のLSIプロセ
スで得られる膜と同程度の膜質及び形状制御性を得るこ
とができた。また、溝に埋まった配線の断面形状はほぼ
矩形で、埋め込んだあとの溝の部分の段差は0.2μｍと
わずかで、平坦な配線部を形成できた。On the other hand, when the wiring was drawn after the groove was formed on the substrate 5, the following excellent characteristics were obtained. The resulting groove has a width of 1.2 μm and a depth of 1 μm, which is the same as the polyimide thickness.
Thus, a substantially rectangular groove could be formed. Irradiation intensity through this groove
When the wiring was buried at 4 MW / cm 2 , the wiring could be formed with the thickness of 0.8 μm filling the groove without the deposited film protruding over the groove. In addition, the resistivity of the obtained film was as low as 1.5 times the bulk value, and the film quality and shape controllability comparable to those of the film obtained by the ordinary LSI process using a batch process could be obtained. Further, the cross-sectional shape of the wiring buried in the groove was almost rectangular, and the step difference in the groove portion after the wiring was as small as 0.2 μm, and a flat wiring portion could be formed.
以上、本発明による可視光による高強度のパルスレーザ
光による膜の蒸散を利用する方法を述べたが、波長をエ
キシマレーザなどにより発生できる紫外域にすれば、絶
縁膜の吸収係数が増加するために、単位パルスあたりの
加工深さを薄くできるので溝を形成する時の形状の制御
性が向上する。この効果を利用すれば、例えば、絶縁膜
がポリイミドのみの単層膜であっても照射するパルス数
を選択して溝の深さを制御できるので、所要の配線厚み
に応じて溝の深さを制御できる利点がある。また以上の
一実施例では、直接描画するための原料気体としてMo(C
o)6を用いた例を述べたが、本発明の原理に基けば、本
発明の効果が他の熱分解反応を利用する配線形成方法及
び装置全てに適用できることはいうまでもない。As mentioned above, the method of utilizing the evaporation of the film by the high intensity pulsed laser light by the visible light according to the present invention has been described. However, if the wavelength is set to the ultraviolet region that can be generated by the excimer laser or the like, the absorption coefficient of the insulating film increases. In addition, since the processing depth per unit pulse can be reduced, the controllability of the shape when forming the groove is improved. If this effect is used, the depth of the groove can be controlled by selecting the number of pulses to be applied even if the insulating film is a single-layer film made of only polyimide, so that the depth of the groove can be adjusted according to the required wiring thickness. Can be controlled. Further, in the above one embodiment, Mo (C) is used as the source gas for direct writing.
Although the example using o) 6 has been described, it goes without saying that, based on the principle of the present invention, the effects of the present invention can be applied to all wiring forming methods and devices utilizing other thermal decomposition reactions.
本発明の方法において、基板上に溝を形成する方法とし
て、レーザビームを用いずに、電子ビームや収束イオン
ビームなどの荷電ビームを用いることができる。この場
合にはビームの収束性をレーザ光に比べさらに微細化で
きるのでサブμｍの細い溝を掘ることができ、配線の幅
をさらに微細化することができる利点がある。In the method of the present invention, a charged beam such as an electron beam or a focused ion beam can be used as a method for forming a groove on a substrate without using a laser beam. In this case, the beam converging property can be further miniaturized as compared with the laser beam, so that a sub-μm narrow groove can be dug and the width of the wiring can be further miniaturized.
［発明の効果］ 以上述べたように、本発明によれば、従来の平坦な基板
上に直接配線を形成する方法及び装置では形成が困難と
されていた１μｍ程度の細い線幅でかつ線幅と同程度に
厚い配線を直接描画でき、さらに堆積した膜の断面形状
が矩形に近い配線に適した形状の配線を形成しうる配線
形成方法及び装置を提供することができる。[Effects of the Invention] As described above, according to the present invention, a line width as thin as about 1 μm and a line width, which has been difficult to form by the conventional method and apparatus for directly forming wiring on a flat substrate, can be obtained. It is possible to provide a wiring forming method and apparatus capable of directly drawing a wiring as thick as the above, and further capable of forming a wiring having a shape suitable for a wiring having a cross-sectional shape of a deposited film close to a rectangle.
第１図は、本発明の一実施例を示す図である。 １…原料気体供給ユニット、 ２…窓、３…レンズ、 ４…Ｘ−Ｙステージ、５…基板、 ６…チェンバー、７…排気ユニット、 ８…第１のレーザ光源、 ９…第２のレーザ光源、10…ミラー、 11…合成ミラー、12…制御ユニット FIG. 1 is a diagram showing an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1 ... Raw material gas supply unit, 2 ... Window, 3 ... Lens, 4 ... XY stage, 5 ... Substrate, 6 ... Chamber, 7 ... Exhaust unit, 8 ... 1st laser light source, 9 ... 2nd laser light source , 10 ... Mirror, 11 ... Synthetic mirror, 12 ... Control unit
Claims (2)
気体を含む雰囲気中に置かれた基板上に、レーザ光を集
光照射し、前記レーザ光を前記基板に対し相対的に走査
することにより配線を描画する配線形成方法において、
前記基板上に前記配線を形成する前に前記配線を形成す
べき箇所に、パルスレーザ光を照射して、前記基板上の
絶縁膜の上層部に溝を形成し、次いで、前記溝の上に前
記レーザ光を集光照射して配線を形成することを特徴と
する配線形成方法。1. A laser beam is focused and irradiated onto a substrate placed in an atmosphere containing a raw material gas for depositing a conductive substance by a chemical reaction, and the laser beam is relatively scanned with respect to the substrate. In the wiring forming method of drawing wiring by
Before forming the wiring on the substrate, the portion where the wiring should be formed is irradiated with pulsed laser light to form a groove in the upper layer portion of the insulating film on the substrate, and then on the groove. A wiring forming method comprising condensing and irradiating the laser beam to form a wiring.
ーと、前記第１のレーザ光源の出射光を前記窓を介し
て、前記チェンバー内の基板上に集光照射する光学系
と、前記第１のレーザ光源からの光照射によって前記基
板上に起こる化学反応により導電性物質を堆積する原料
気体を前記チェンバーに供給する原料気体供給ユニット
と、前記チェンバー内に前記基板を保持する機構と、前
記基板に対してレーザ光の照射位置を走査するＸ−Ｙス
テージとを備える配線形成装置において、前記出射光を
前記基板上に集光して前記基板上に溝を形成する第２の
レーザ光源と、前記基板上の配線を形成すべき箇所に前
記第２のレーザ光源からの出射光を照射しながら前記Ｘ
−Ｙステージを走査した後に、前記チェンバーへ前記原
料気体を供給し、前記第１のレーザ光源からの前記出射
光を前記配線を形成すべき箇所に照射しながら前記Ｘ−
Ｙステージを走査させるように前記第１のレーザ光源及
び前記第２のレーザ光源からの光照射のタイミング、及
び、前記Ｘ−Ｙステージの走査及び前記原料気体供給ユ
ニットの動作を制御する制御ユニットとを有することを
特徴とする配線形成装置。2. A first laser light source, a chamber having a window, and an optical system for converging and irradiating light emitted from the first laser light source onto a substrate in the chamber through the window. A raw material gas supply unit for supplying a raw material gas for depositing a conductive substance to the chamber by a chemical reaction occurring on the substrate by irradiation of light from the first laser light source, and a mechanism for holding the substrate in the chamber. A second laser for forming a groove on the substrate by condensing the emitted light on the substrate in a wiring forming apparatus including an XY stage that scans an irradiation position of the laser light on the substrate. While irradiating light emitted from the second laser light source to the light source and the place where the wiring on the substrate is to be formed, the X
After scanning the Y stage, the source gas is supplied to the chamber, and the emitted light from the first laser light source is applied to the place where the wiring is to be formed, while the X-
A control unit for controlling the timing of light irradiation from the first laser light source and the second laser light source so as to scan the Y stage, and the scanning of the XY stage and the operation of the raw material gas supply unit. A wiring forming device comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62283412A JPH0673354B2 (en) | 1987-11-09 | 1987-11-09 | Wiring forming method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62283412A JPH0673354B2 (en) | 1987-11-09 | 1987-11-09 | Wiring forming method and device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01124237A JPH01124237A (en) | 1989-05-17 |
| JPH0673354B2 true JPH0673354B2 (en) | 1994-09-14 |
Family
ID=17665196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62283412A Expired - Lifetime JPH0673354B2 (en) | 1987-11-09 | 1987-11-09 | Wiring forming method and device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0673354B2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS634645A (en) * | 1986-06-25 | 1988-01-09 | Hitachi Ltd | Selective formation of conductor film |
-
1987
- 1987-11-09 JP JP62283412A patent/JPH0673354B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01124237A (en) | 1989-05-17 |
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