JPH0671137B2 - Manufacturing method of aluminum nitride substrate bonded with copper - Google Patents
Manufacturing method of aluminum nitride substrate bonded with copperInfo
- Publication number
- JPH0671137B2 JPH0671137B2 JP1150617A JP15061789A JPH0671137B2 JP H0671137 B2 JPH0671137 B2 JP H0671137B2 JP 1150617 A JP1150617 A JP 1150617A JP 15061789 A JP15061789 A JP 15061789A JP H0671137 B2 JPH0671137 B2 JP H0671137B2
- Authority
- JP
- Japan
- Prior art keywords
- copper
- aluminum nitride
- paste
- copper plate
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Laminated Bodies (AREA)
- Ceramic Products (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、銅を接合した窒化アルミニウム基板の製法、
とくにパワー半導体モジユール基板等に適した熱放散性
の良い回路基板の製法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial application] The present invention relates to a method for producing an aluminum nitride substrate bonded with copper,
In particular, the present invention relates to a method for manufacturing a circuit board having a good heat dissipation property, which is suitable for a power semiconductor module board or the like.
従来より、窒化アルミニウムと銅板を接合する方法とし
ては、次のものが提案されている。Conventionally, the following methods have been proposed as a method for joining aluminum nitride and a copper plate.
（ｉ）表面を酸化した窒化アルミニウム基板に銅板を接
触配置し、銅の融点以下、Cu2O-Oの共晶温度以上で加熱
して接合する方法いわゆるDBC法（例えば特開昭59−121
175号公報） （ii）窒化アルミニウム基板と銅板の間にAg箔、Cu箔さ
らには活性金属箔を順次積層し加熱して接合する方法
（例えば特開昭56−163093号公報） （iii）上記金属の合金板を介在させ加熱接合する方法
（例えば特開昭58−140381号公報） （iv）上記金属からなる合金粉末を介在させ加熱接合す
る方法（例えば特開昭56−163093号公報） しかしながら、（ｉ）の方法には、銅板のフクレが発生
しやすく基板に対する付着強度が充分でないという問
題、（ii）の方法においては、各箔の厚みが数μｍと薄
いため積層自体が難しいという問題、 （iii）の方法には、銅回路板と同様の形状にあらかじ
め成形しなくてはならないという問題があつた。合金粉
末を介在させ加熱接合する（iv）の方法は、それらの合
金粉末を例えばペースト化し表面に塗布するという簡便
な方法ではあるが、あらかじめ合金粉末を調整しておか
ねばならないという欠点があつた。(I) A method in which a copper plate is placed in contact with an aluminum nitride substrate whose surface is oxidized, and heated at a temperature not higher than the melting point of copper and not lower than the eutectic temperature of Cu 2 OO to join the so-called DBC method (for example, JP-A-59-121
No. 175) (ii) A method in which an Ag foil, a Cu foil and an active metal foil are sequentially laminated between an aluminum nitride substrate and a copper plate and heated to bond them (for example, Japanese Patent Laid-Open No. 56-163093) (iii) Above A method of heat-bonding by interposing an alloy plate of metal (for example, JP-A-58-140381) (iv) A method of heat-bonding by interposing an alloy powder of the above metal (for example, JP-A-56-163093) In the method (i), blistering of the copper plate is likely to occur and the adhesion strength to the substrate is not sufficient, and in the method (ii), the lamination itself is difficult because the thickness of each foil is as thin as several μm. The method (iii) has a problem that it must be formed in advance into a shape similar to that of the copper circuit board. The method (iv) of heat-bonding with the interposition of alloy powders is a simple method of forming the alloy powders into a paste and applying it to the surface, but it has a drawback that the alloy powders must be adjusted in advance. .
本発明者らは、以上の問題点を解決することを目的とし
て種々検討した結果、特定組成からなるペーストを銅板
と窒化アルミニウム焼結体の間に介在させて特定条件化
で熱処理すればよいことを見い出し本発明を完成したも
のである。As a result of various investigations aimed at solving the above problems, the present inventors have to interpose a paste having a specific composition between a copper plate and an aluminum nitride sintered body and heat-treat it under specific conditions. The inventors have found the present invention and completed the present invention.
すなわち、本発明は、次の（ａ）、（ｂ）及び（ｃ）の
工程からなることを特徴とする銅を接合した窒化アルミ
ニウム基板の製法である。That is, the present invention is a method for manufacturing a copper-bonded aluminum nitride substrate, which comprises the following steps (a), (b) and (c).
（ａ）銀粉、銅粉及び水素化チタン粉に有機溶剤を添加
してペーストを調製した後、それをスクリーン印刷法に
て窒化アルミニウム焼結体表面に塗布する工程 （ｂ）上記ペースト塗布箇所に銅板を配置する工程 （ｃ）上記銅板を配置した窒化アルミニウム焼結体を不
活性雰囲気下800℃以上950℃以下の温度にて熱処理した
後冷却する工程 以下、本発明をさらに詳細に説明する。(A) A step of preparing a paste by adding an organic solvent to silver powder, copper powder and titanium hydride powder, and then applying the paste to the surface of an aluminum nitride sintered body by a screen printing method. Step of placing copper plate (c) Step of heat-treating the aluminum nitride sintered body on which the copper plate is placed at a temperature of 800 ° C. to 950 ° C. in an inert atmosphere and then cooling the present invention will be described in more detail below.
本発明では、銅板と窒化アルミニウム焼結体との接合剤
として、銀、銅及び水素化チタンの粉末が用いられる。
通常、これらのロウ材では、活性金属としてチタン、ジ
ルコニウム、ハフニウム等が用いられるが、本発明で
は、それらの中で特にチタンを、しかもその添加形態と
して水素化物を使用することにより、従来より強い接合
強度にしたことが大きな特徴の１つである。In the present invention, powders of silver, copper and titanium hydride are used as a bonding agent between the copper plate and the aluminum nitride sintered body.
Usually, in these brazing materials, titanium, zirconium, hafnium, etc. are used as the active metal, but in the present invention, by using titanium among them, and hydride as the addition form, it is stronger than before. One of the major characteristics is that the bonding strength is set.
このように強い接合強度が得られる原因について、接合
体の断面観察と接合層の組成分析を行なつて検討したと
ころ、窒化アルミニウム側から窒化チタン層、銅と銀の
混合物層、銅板の順となつており、銅と銀の混合物層が
生成される窒化チタン層と銅板とを強固に結合している
ことがわかつた。これは、通常の金属チタンを添加した
場合も同種の構造をとるが、本発明では、チタンが水素
化物の分解により生成するためより活性化された状態に
あること及び同時分解生成した水素が銅と銀粉表面に微
量存在する酸素の捕獲剤として作用し、その結果、酸素
を系外に排除しチタンがより有効に窒化アルミ表面に作
用することができたためと考えている。The reason why such a strong bonding strength is obtained was examined by observing the cross section of the bonded body and analyzing the composition of the bonding layer, and from the aluminum nitride side, a titanium nitride layer, a mixture layer of copper and silver, and a copper plate were sequentially ordered. It has been found that the titanium nitride layer, which forms a mixture layer of copper and silver, is firmly bonded to the copper plate. This has the same structure even when ordinary metal titanium is added, but in the present invention, titanium is in a more activated state because it is generated by decomposition of hydride, and the hydrogen generated by simultaneous decomposition is copper. It is considered that the titanium acts as a scavenger of oxygen present in a trace amount on the surface of the silver powder, and as a result, oxygen can be excluded from the system and titanium can act on the aluminum nitride surface more effectively.
本発明において、銀と銅粉末の混合比は、重量割合で、
銀60〜80％、銅20〜40％が好ましく採用される。この混
合比は、後の熱処理工程における処理温度により任意に
選択されるが、処理温度の低下及び接合強度の向上の点
から、銀72％、銅28％のいわゆる共晶組成が最も好まし
い。In the present invention, the mixing ratio of silver and copper powder is a weight ratio,
Silver of 60 to 80% and copper of 20 to 40% are preferably adopted. This mixing ratio is arbitrarily selected depending on the treatment temperature in the subsequent heat treatment step, but a so-called eutectic composition of 72% silver and 28% copper is most preferable from the viewpoint of lowering the treatment temperature and improving the bonding strength.
銀と銅の混合粉末100重量部に対する水素化チタンは５
重量部以上20重量部以下が好ましい。５重量部未満では
生成される窒化チタン層が少なくなり、窒化アルミニウ
ム焼結体との接合強度が充分高くなり、一方、20重量部
を越えると生成する窒化チタン量が増加するため窒化ア
ルミニウム焼結体との接着強度は増すが残留応力の緩和
が困難となりクラツクが発生しやすくなる。Titanium hydride is 5 for 100 parts by weight of mixed powder of silver and copper.
It is preferably not less than 20 parts by weight. If it is less than 5 parts by weight, the titanium nitride layer produced is small, and the bonding strength with the aluminum nitride sintered body is sufficiently high, while if it exceeds 20 parts by weight, the amount of titanium nitride produced is increased, so aluminum nitride sintering is performed. Although the adhesive strength with the body increases, it is difficult to alleviate the residual stress and cracking easily occurs.
以上の銀、銅および水素化チタンの粉末を用いてペース
トを調整するには、一般のメタライズ用ペーストに用い
られている有機溶液例えばメチルセルソルブ、エチルセ
ルソルブ、テレピネオール等と共に混合すればよい。そ
の配合の一例を示せば、有機溶剤60〜70容量部、上記混
合粉末40〜30容量部及び二者の合計が100容量部であ
る。ペーストの粘度としては20,000〜100,000cps程度で
ある。本発明で重要な点は、一般のペーストに用いられ
ている有機結合剤を使用していないことである。このこ
とによつて、有機結合剤の分解残査及び／又は分解ガス
成分と、活性金属との反応がなく、添加活性金属が有効
に作用することができるものである。To prepare a paste using the above-mentioned powders of silver, copper, and titanium hydride, it may be mixed with an organic solution used in a general metallizing paste, such as methyl cellosolve, ethyl cellosolve, and terpineol. If one example of the composition is shown, the organic solvent 60 to 70 parts by volume, the mixed powder 40 to 30 parts by volume, and the total of the two are 100 parts by volume. The viscosity of the paste is about 20,000 to 100,000 cps. The important point in the present invention is that the organic binder used in general paste is not used. As a result, there is no reaction between the decomposition residue and / or decomposition gas component of the organic binder and the active metal, and the added active metal can act effectively.
本発明で使用される窒化アルミニウム焼結体としては、
公知の方法で製造されたものが使用でき、その一例を示
せば、焼結助剤を添加せずにホツトプレス法で焼結した
もの、イツトリア、カルシアなどの酸化物を窒化アルミ
ニウム粉末に添加して常圧焼結したものなどである。The aluminum nitride sintered body used in the present invention,
Those manufactured by a known method can be used, and if one example is shown, those sintered by a hot press method without adding a sintering aid, itutria, and oxides such as calcia are added to aluminum nitride powder. For example, those sintered under normal pressure.
ペーストは窒化アルミニウム焼結体の片面又は両面スク
リーン印刷法により塗布される。パワー半導体モジユー
ル用基板としては、片面に基板とほぼ同じ大きさの銅板
を接合しヒートシンク材と半田付けするため、この面に
対してはほぼ全面に上記ペーストを塗布する。また、も
う一方の面には半導体素子を搭載する銅回路板を接合す
るため、あらかじめ回路板と同じパターンにペーストを
スクリーン印刷する。印刷後、充分乾燥させたのち、こ
のペースト塗布箇所と同形状の銅板をあらかじめ放電加
工、打ち抜き法等により作製しておき、それを上記ペー
スト塗布箇所上に配置する。The paste is applied by a single-sided or double-sided screen printing method of an aluminum nitride sintered body. As a substrate for power semiconductor modules, a copper plate of approximately the same size as the substrate is bonded to one side and soldered to a heat sink material, so the paste is applied to almost this entire surface. Further, in order to join a copper circuit board on which the semiconductor element is mounted to the other surface, the paste is screen-printed in advance in the same pattern as the circuit board. After printing, after being sufficiently dried, a copper plate having the same shape as this paste application site is prepared in advance by electric discharge machining, punching or the like, and placed on the paste application site.
以上のようにして銅板が配置された窒化アルミニウム焼
結体は、不活性雰囲気下800℃以上950℃以下の温度で熱
処理される。800℃に満たない温度においてもCu-Agは液
相を生成するが、このような条件下において作製された
接合体は介在層と窒化アルミニウム焼結体や銅板との濡
れが不良となり充分な接合強度を生じない。また、950
℃を越える温度にて処理されたものは、接合層の粘性が
小さいため、銅板からロウ材のはみ出しを生じ短絡の原
因となつてしまう。The aluminum nitride sintered body on which the copper plate is arranged as described above is heat-treated at a temperature of 800 ° C. or higher and 950 ° C. or lower in an inert atmosphere. Cu-Ag forms a liquid phase even at temperatures below 800 ° C, but the joints produced under such conditions have poor wetting between the intervening layer and the aluminum nitride sintered body or copper plate Does not produce strength. Also, 950
A product treated at a temperature exceeding ℃ has a low viscosity of the bonding layer, so that the brazing material may stick out from the copper plate and cause a short circuit.
熱処理雰囲気としたは、Ar、He等の不活性ガス雰囲気下
の他、真空雰囲気が使用できる。The heat treatment atmosphere may be an inert gas atmosphere such as Ar or He, or a vacuum atmosphere.
熱処理後冷却して本発明の銅を接合した窒化アルミニウ
ム基板とする。アルミニウム焼結体と銅の熱膨張係数の
差が大きいので、その際の冷却速度を大きくすると得ら
れた基板に残留応力に起因するクラツクや欠損が生じる
ことがある。そのため、本発明では、残留応力を極力少
なくするために冷却速度を５℃／分以下特に２℃／分以
下とするのが望ましい。After the heat treatment, the substrate is cooled to obtain the copper-bonded aluminum nitride substrate of the present invention. Since the difference in thermal expansion coefficient between the aluminum sintered body and copper is large, if the cooling rate at that time is increased, cracks or defects due to residual stress may occur in the obtained substrate. Therefore, in the present invention, it is desirable that the cooling rate be 5 ° C./min or less, particularly 2 ° C./min or less in order to minimize residual stress.
以下、実施例と比較例をあげてさらに具体的に本発明を
説明する。Hereinafter, the present invention will be described more specifically with reference to Examples and Comparative Examples.
実施例１〜４ 銀粉末72重量％、銅粉末28重量％からなる混合粉末100
重量部に対し、水素化チタン粉末を各々５、10、15及び
20重量部添加後、これらを十分混合し、テレピネオール
を加えてペーストを調整した。このペーストを50mm×50
mm×0.635mmtの窒化アルミニウム焼結体の両面にスクリ
ーン印刷した後乾燥した。その際、片面はほぼ全面に、
もう一方の面は半導体素子搭載のため島状に印刷した。Examples 1 to 4 100% mixed powder consisting of 72% by weight of silver powder and 28% by weight of copper powder
5 parts by weight of titanium hydride powder was added to each of 5, 10, 15 and
After adding 20 parts by weight, these were thoroughly mixed and terpineol was added to prepare a paste. 50mm x 50 of this paste
Screen printing was performed on both sides of an aluminum nitride sintered body of mm × 0.635 mmt and then dried. At that time, one side is almost the entire surface,
The other surface was printed in an island shape for mounting semiconductor elements.
このペースト塗布位置に、相似形で熱膨張差を考慮して
やゝ小さめの銅板を接触配置後、真空中850℃で2hr熱処
理後冷却速度を５℃／分として冷却し窒化アルミニウム
焼結体と銅板の接合体を製造した。得られた接合体の銅
板をはがし、剥離した状態を観察することにより接合性
を調べた。その結果を表１に示す。After placing a small copper plate similar to this paste application position in consideration of the difference in thermal expansion, slightly heat treatment in vacuum at 850 ° C for 2 hours, and then cooling at a cooling rate of 5 ° C / min to cool the aluminum nitride sintered body and the copper plate. A zygote was manufactured. The copper plate of the obtained bonded body was peeled off, and the peeled state was observed to examine the bondability. The results are shown in Table 1.
比較例１〜２ 水素化チタン粉末のかわりにチタン粉末を５又は10重量
部としたこと以外は実施例１と同様にして窒化アルミニ
ウム焼結体と銅板の接合体を製造した。その接合性の観
察結果を表１に示す。Comparative Examples 1-2 A joined body of an aluminum nitride sintered body and a copper plate was manufactured in the same manner as in Example 1 except that titanium powder was replaced by 5 or 10 parts by weight instead of titanium hydride powder. The results of observation of the bondability are shown in Table 1.
〔発明の効果〕 本発明によれば、接合強度に優れクラツクの発生のな
い、銅を接合した窒化アルミニウム基板を簡単に製造す
ることができる。 EFFECTS OF THE INVENTION According to the present invention, it is possible to easily manufacture an aluminum nitride substrate bonded with copper that has excellent bonding strength and is free from cracking.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭64−76605（ＪＰ，Ａ) 特開 昭63−239173（ＪＰ，Ａ) 特開 昭60−177635（ＪＰ，Ａ) 特開 平１−206508（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-64-76605 (JP, A) JP-A-63-239173 (JP, A) JP-A-60-177635 (JP, A) JP-A-1- 206508 (JP, A)
Claims (1)
なることを特徴とする銅を接合した窒化アルミニウム基
板の製法。 （ａ）銀粉、銅粉及び水素化チタン粉に有機溶剤を添加
してペーストを調製した後、それをスクリーン印刷法に
て窒化アルミニウム焼結体表面に塗布する工程 （ｂ）上記ペースト塗布箇所に銅板を配置する工程 （ｃ）上記銅板を配置した窒化アルミニウム焼結体を不
活性雰囲気下800℃以上950℃以下の温度にて熱処理した
後冷却する工程1. A method of manufacturing an aluminum nitride substrate bonded with copper, which comprises the following steps (a), (b) and (c). (A) A step of preparing a paste by adding an organic solvent to silver powder, copper powder and titanium hydride powder, and then applying the paste to the surface of an aluminum nitride sintered body by a screen printing method. Step of placing a copper plate (c) Step of heat-treating the aluminum nitride sintered body on which the copper plate is placed at a temperature of 800 ° C. or higher and 950 ° C. or lower in an inert atmosphere and then cooling
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1150617A JPH0671137B2 (en) | 1989-06-15 | 1989-06-15 | Manufacturing method of aluminum nitride substrate bonded with copper |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1150617A JPH0671137B2 (en) | 1989-06-15 | 1989-06-15 | Manufacturing method of aluminum nitride substrate bonded with copper |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0318087A JPH0318087A (en) | 1991-01-25 |
| JPH0671137B2 true JPH0671137B2 (en) | 1994-09-07 |
Family
ID=15500790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1150617A Expired - Lifetime JPH0671137B2 (en) | 1989-06-15 | 1989-06-15 | Manufacturing method of aluminum nitride substrate bonded with copper |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0671137B2 (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0810710B2 (en) * | 1984-02-24 | 1996-01-31 | 株式会社東芝 | Method for manufacturing good thermal conductive substrate |
| JPS63239173A (en) * | 1987-03-27 | 1988-10-05 | 古河電気工業株式会社 | Manufacture of substrate for radiation type circuit |
| JP2543534B2 (en) * | 1987-09-17 | 1996-10-16 | 富士通株式会社 | Conductor paste composition for aluminum nitride substrate |
| JP2967929B2 (en) * | 1987-10-27 | 1999-10-25 | 旭硝子株式会社 | Conductor paste for aluminum nitride substrate |
-
1989
- 1989-06-15 JP JP1150617A patent/JPH0671137B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0318087A (en) | 1991-01-25 |
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