JPH0669326A - Wafer holder - Google Patents
Wafer holderInfo
- Publication number
- JPH0669326A JPH0669326A JP22278692A JP22278692A JPH0669326A JP H0669326 A JPH0669326 A JP H0669326A JP 22278692 A JP22278692 A JP 22278692A JP 22278692 A JP22278692 A JP 22278692A JP H0669326 A JPH0669326 A JP H0669326A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- fixed
- wafer
- holder
- periphery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はウェハホルダーに関する
ものである。FIELD OF THE INVENTION The present invention relates to a wafer holder.
【０００２】[0002]
【従来の技術】近年、ウェハホルダーの改良が数多くな
されているが、その中で例えば特開昭５４−６４５５号
公報で開示されたウェハホルダーを図４の断面図と図５
の平面図で示す。これらの図に於て、平板状本体２１上
に半導体ウェハ２２が載置されている。板バネ２３がビ
ス２４にて平板状本体２１に固定され、板バネ２３の先
端部２５により半導体ウェハ２２が保持されている。2. Description of the Related Art In recent years, many improvements have been made to wafer holders. Among them, the wafer holder disclosed in, for example, Japanese Patent Laid-Open No. 54-6455 is shown in a sectional view of FIG.
In a plan view. In these figures, a semiconductor wafer 22 is placed on a flat plate-shaped main body 21. The leaf spring 23 is fixed to the flat plate-shaped main body 21 with screws 24, and the tip end portion 25 of the leaf spring 23 holds the semiconductor wafer 22.
【０００３】[0003]
【発明が解決しようとする課題】しかして上述のウェハ
ホルダーを用いると、半導体ウェハ２２から得られる素
子の歩留まりが悪いという欠点がある。即ち、このウェ
ハホルダーに固定された半導体ウェハ２２に表面電極を
形成するために、表面全体に金属を蒸着する。しかし板
バネの先端部２５が蒸着の邪魔になり、その先端部２５
の下にある半導体ウェハ２２の部分が蒸着されない。従
って、この半導体ウェハ２２を分割して素子を得た時
に、上述の未蒸着部に対応した素子は電極が形成されず
に不完全なものとなる。故に、本発明は上述の従来の欠
点に鑑みてなされたものであり、完全な表面電極を有す
る半導体ウェハを得るのに適したウェハホルダーを提供
するものである。However, when the above-mentioned wafer holder is used, there is a drawback that the yield of elements obtained from the semiconductor wafer 22 is low. That is, in order to form a surface electrode on the semiconductor wafer 22 fixed to this wafer holder, metal is deposited on the entire surface. However, the tip 25 of the leaf spring interferes with the vapor deposition, and the tip 25
The portion of the semiconductor wafer 22 that underlies is not deposited. Therefore, when the semiconductor wafer 22 is divided to obtain the elements, the elements corresponding to the above-mentioned undeposited portions become incomplete without electrodes being formed. Therefore, the present invention has been made in view of the above-mentioned conventional drawbacks, and provides a wafer holder suitable for obtaining a semiconductor wafer having a perfect surface electrode.
【０００４】[0004]
【課題を解決するための手段】本発明は上述の課題を解
決するために、磁性体からなる平板状本体の表面に半導
体ウェハを載置する。半導体ウェハの周辺を部分的に覆
う様に、平板状本体の表面上に対向して固定保持体と磁
性体からなる可動保持体を配置する。In order to solve the above-mentioned problems, the present invention mounts a semiconductor wafer on the surface of a flat plate-shaped main body made of a magnetic material. A movable holding member made of a fixed holding member and a magnetic member is arranged on the surface of the flat plate-like main body so as to partially cover the periphery of the semiconductor wafer.
【０００５】[0005]
【作用】通常、半導体ウェハの周辺近傍は素子に分割し
ても良品とはならない部分である。本発明は上述の様
に、この半導体ウェハの周辺を部分的に覆った保持体を
設ける。故に半導体ウェハは周辺を除いて蒸着による表
面電極が形成されるので、分割して得られかつ周辺を除
く素子は全数、完全な表面電極が形成される。更に割れ
た半導体ウェハに対しても、磁性体からなる可動保持体
で覆うので、半導体ウェハを位置ずれなしに平板状本体
に容易にかつ確実に固定できる。In general, the vicinity of the periphery of the semiconductor wafer is a portion which is not a good product even if it is divided into elements. As described above, the present invention provides the holding body which partially covers the periphery of the semiconductor wafer. Therefore, since the semiconductor wafer has the surface electrodes formed by vapor deposition except the periphery, all the elements obtained by dividing and excluding the periphery have complete surface electrodes. Further, the broken semiconductor wafer is covered with the movable holder made of a magnetic material, so that the semiconductor wafer can be easily and surely fixed to the flat plate-like main body without displacement.
【０００６】[0006]
【実施例】以下に本発明の第１実施例を図１と図２に従
い説明する。図１は本実施例に係るウェハホルダーの断
面図であり、図２はその平面図である。これらの図に於
て平板状本体１は厚さ約２mmの金属性円板よりなる。平
板状本体１は望しくはＳＵＳ４３０または鉄の様な磁性
体からなる。固定具２は金属からなり、その１端は平板
状本体１に溶接等で固定され、その他端は蒸着機の内部
に固定するためにネジ切りされている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described below with reference to FIGS. FIG. 1 is a sectional view of a wafer holder according to this embodiment, and FIG. 2 is a plan view thereof. In these figures, the flat plate-shaped main body 1 is made of a metallic disc having a thickness of about 2 mm. The flat body 1 is preferably made of a magnetic material such as SUS430 or iron. The fixture 2 is made of metal, one end of which is fixed to the flat plate-like main body 1 by welding or the like, and the other end of which is threaded so as to be fixed inside the vapor deposition machine.
【０００７】固定保持板３、４、５は共に金属、望しく
はステンレス板からなり、平板状本体１の表面にビス６
により固定されている。固定保持板３、４、５は略直交
して２個、望しくは３個配置されている。固定保持板
３、４、５の断面は長方形を部分的に斜めカットされた
形状をしている。The fixed holding plates 3, 4 and 5 are both made of metal, preferably stainless steel plate, and screws 6 are formed on the surface of the flat plate-shaped main body 1.
It is fixed by. Two fixed holding plates 3, 4 and 5 are arranged substantially orthogonal to each other, preferably three arranged. The cross-sections of the fixed holding plates 3, 4, and 5 have a shape in which a rectangle is partially obliquely cut.
【０００８】可動保持体７はフェライト等の磁性体から
なり、その大きさは長さ１１mm、幅６mm、厚さ３mm程度
である。可動保持体７の断面は長方形を部分的に斜めカ
ットされた形状をしている。The movable holder 7 is made of a magnetic material such as ferrite, and its size is about 11 mm in length, 6 mm in width, and 3 mm in thickness. The cross section of the movable holder 7 has a shape in which a rectangle is partially obliquely cut.
【０００９】半導体ウェハ８は例えば、燐化ガリウムの
基板上にｎ型領域とｐ型領域をエピタキシャル成長させ
たものの裏面にｎ型電極を形成されたものである。半導
体ウェハ８は固定保持体３、４と可動保持体７のそれぞ
れの斜めカット部３ａ、４ａと７ａと当接して配置され
ている。すなわち固定保持体３、４と可動保持体７は半
導体ウェハ８の周辺を部分的に覆って、平板状本体１の
表面上に対向して配置されている。また必要に応じて半
導体ウェハ８は固定保持体４、５と可動保持体７に保持
されても良い。上述の部品により本実施例のウェハホル
ダー９は構成されている。The semiconductor wafer 8 is, for example, one obtained by epitaxially growing an n-type region and a p-type region on a gallium phosphide substrate and having an n-type electrode formed on the back surface. The semiconductor wafer 8 is arranged in contact with the oblique cut portions 3a, 4a and 7a of the fixed holding bodies 3 and 4 and the movable holding body 7, respectively. That is, the fixed holders 3 and 4 and the movable holder 7 partially cover the periphery of the semiconductor wafer 8 and are arranged to face each other on the surface of the flat plate-shaped main body 1. If necessary, the semiconductor wafer 8 may be held by the fixed holding bodies 4 and 5 and the movable holding body 7. The wafer holder 9 of this embodiment is constituted by the above components.
【００１０】そしてこのウェハホルダー９に固定された
半導体ウェハ８は蒸着機内に配置され、金と亜鉛等から
なる試料に電子ビームが照射され、半導体ウェハ８の表
面全般に金と亜鉛等が蒸着される。その後、エッチング
により所定の形状をしたｐ型電極が半導体ウェハ８上に
形成される。そして半導体ウェハ８を分割することによ
り複数の素子が得られる。The semiconductor wafer 8 fixed to the wafer holder 9 is placed in a vapor deposition machine, and a sample made of gold and zinc is irradiated with an electron beam to deposit gold and zinc on the entire surface of the semiconductor wafer 8. It After that, a p-type electrode having a predetermined shape is formed on the semiconductor wafer 8 by etching. Then, the semiconductor wafer 8 is divided to obtain a plurality of elements.
【００１１】通常、半導体ウェハ８の周辺から約１mm内
部の範囲では、素子に分割しても良品とはならないので
役に立たない部分である。何故ならば、この部分で素子
の形状が四角にならないし、分割時のストレスが残って
いるからである。従って固定保持体３、４、５と可動保
持体７が半導体ウェハ８を覆う長さを１mm以内に設定す
る方が良い。Usually, the area within about 1 mm from the periphery of the semiconductor wafer 8 is a useless portion because it does not become a non-defective product even if it is divided into elements. This is because the element does not have a square shape at this portion, and stress during division remains. Therefore, it is better to set the length of the fixed holders 3, 4, 5 and the movable holder 7 to cover the semiconductor wafer 8 within 1 mm.
【００１２】従来のウェハホルダーを用いた半導体ウェ
ハ１枚当り約 13000個の素子が得られ、その中で約 200
個の素子が板バネの先端部の下に対応しており、不完全
な素子となる。歩留まりは (13000-200)/13000＝98.46
％である。これに対して本実施例のウェハホルダーを用
いた半導体ウェハでは、約 13000個の素子が得られ歩留
まりは 100％である。Approximately 13,000 elements can be obtained per semiconductor wafer using the conventional wafer holder, of which approximately 200 elements are obtained.
This element corresponds to the bottom of the tip of the leaf spring, which is an incomplete element. Yield is (13000-200) /13000=98.46
%. On the other hand, in the semiconductor wafer using the wafer holder of this embodiment, about 13000 elements are obtained and the yield is 100%.
【００１３】次に本発明の第２実施例を図３の平面図に
従い説明する。この図に於て、第１実施例と同じ固定保
持体３、４、５が平板状本体１上に固定されている。半
導体ウェハ１０、１１は第１実施例のものと異なり、割
れたり、不定形のものでも用いることができる。半導体
ウェハ１０は固定保持体３、４と可動保持体７のそれぞ
れの斜めカット部３ａ、４ａ、７ａと当接して固定され
ている。半導体ウェハ１１は固定保持体４、５と可動保
持体７のそれぞれの斜めカット部４ａ、５ａ、７ａと当
接して固定されている。Next, a second embodiment of the present invention will be described with reference to the plan view of FIG. In this figure, the same fixed holding bodies 3, 4, 5 as in the first embodiment are fixed on the flat plate-shaped main body 1. Different from the semiconductor wafers 10 and 11 of the first embodiment, it is possible to use a cracked or amorphous wafer. The semiconductor wafer 10 is fixed by abutting on the oblique cut portions 3a, 4a, 7a of the fixed holding bodies 3, 4 and the movable holding body 7, respectively. The semiconductor wafer 11 is fixed in contact with the oblique cut portions 4a, 5a, 7a of the fixed holding bodies 4, 5 and the movable holding body 7, respectively.
【００１４】上述の様に割れた又は不定形の半導体ウェ
ハ１０、１１に対しても、可動保持体７で固定すること
により、半導体ウェハ１０、１１を位置ずれなしにかつ
浮くことなしに平板状本体１上に固定できる。そして半
導体ウェハ１０、１１の大きさによっては、複数のウェ
ハを同時に蒸着することができるので製造時間が短縮で
きる。By fixing the movable wafer 7 to the semiconductor wafers 10 and 11 that are cracked or have irregular shapes as described above, the semiconductor wafers 10 and 11 can be formed into a flat plate shape without any displacement and floating. It can be fixed on the body 1. Depending on the size of the semiconductor wafers 10 and 11, a plurality of wafers can be vapor-deposited at the same time, and the manufacturing time can be shortened.
【００１５】[0015]
【発明の効果】本発明は上述の様に、半導体ウェハの周
辺を部分的に覆った保持体を設けるので、半導体ウェハ
は周辺近傍を除いて蒸着による完全な表面電極が形成で
きる。また通常、半導体ウェハの周辺近傍は分割しても
完全な素子にならないので役に立たない部分である。故
に半導体ウェハを分割して得られた素子は全数、完全な
表面電極が設けられており歩留まりが 100％となる。As described above, according to the present invention, since the holder that partially covers the periphery of the semiconductor wafer is provided, the semiconductor wafer can be formed with a complete surface electrode by vapor deposition except for the vicinity of the periphery. Further, usually, the vicinity of the periphery of the semiconductor wafer is a useless portion because it does not become a complete element even if it is divided. Therefore, all the devices obtained by dividing the semiconductor wafer are provided with perfect surface electrodes, and the yield is 100%.
【００１６】更に本発明は割れた又は不定形の半導体ウ
ェハに対しても、磁性体からなる移動可能な可動保持体
で半導体ウェハを簡単にかつ確実に固定することができ
る。故に半導体ウェハを位置ずれなしにかつ浮くことな
しに平板状本体上に固定できる。従って表面電極を形成
するために蒸着工程中に、蒸着される金属が半導体ウェ
ハと平板状本体の隙間を通って半導体ウェハの裏面のｎ
型電極に付着することがない。Further, according to the present invention, a semiconductor wafer can be easily and reliably fixed to a cracked or amorphous semiconductor wafer by a movable holder that is made of a magnetic material and is movable. Therefore, the semiconductor wafer can be fixed on the flat plate-like main body without displacement and without floating. Therefore, during the deposition process for forming the front surface electrode, the metal to be deposited passes through the gap between the semiconductor wafer and the plate-shaped body and is n on the back surface of the semiconductor wafer.
Does not adhere to the mold electrode.
【図１】本発明の第１実施例に係るウェハホルダーの断
面図である。FIG. 1 is a sectional view of a wafer holder according to a first embodiment of the present invention.
【図２】本発明の第１実施例に係るウェハホルダーの平
面図である。FIG. 2 is a plan view of a wafer holder according to the first embodiment of the present invention.
【図３】本発明の第２実施例に係るウェハホルダーの平
面図である。FIG. 3 is a plan view of a wafer holder according to a second embodiment of the present invention.
【図４】従来のウェハホルダーの断面図である。FIG. 4 is a sectional view of a conventional wafer holder.
【図５】従来のウェハホルダーの平面図である。FIG. 5 is a plan view of a conventional wafer holder.
１ 平板状本体 ３、４、５ 固定保持体 ７ 可動保持体 ８、１０、１１ 半導体ウェハ 1 Flat Body 3, 4, 5 Fixed Holder 7 Movable Holder 8, 10, 11 Semiconductor Wafer
Claims (1)
導体ウェハの周辺を部分的に覆い、かつ前記平板状本体
の表面上に対向して配置された固定保持体と可動保持体
を具備し、前記平板状本体と前記可動保持体が磁性体か
らなる事を特徴とするウェハホルダー。1. A flat holding body, and a fixed holding body and a movable holding body which partially cover the periphery of a semiconductor wafer placed on the surface of the flat body and are arranged on the surface of the flat body to face each other. A wafer holder, comprising: the flat plate-shaped main body and the movable holding member made of a magnetic material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22278692A JPH0669326A (en) | 1992-08-21 | 1992-08-21 | Wafer holder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22278692A JPH0669326A (en) | 1992-08-21 | 1992-08-21 | Wafer holder |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0669326A true JPH0669326A (en) | 1994-03-11 |
Family
ID=16787878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22278692A Pending JPH0669326A (en) | 1992-08-21 | 1992-08-21 | Wafer holder |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0669326A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6635853B2 (en) | 1909-08-09 | 2003-10-21 | Ibiden Co., Ltd. | Hot plate unit |
-
1992
- 1992-08-21 JP JP22278692A patent/JPH0669326A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6635853B2 (en) | 1909-08-09 | 2003-10-21 | Ibiden Co., Ltd. | Hot plate unit |
| US6639191B2 (en) | 1999-01-25 | 2003-10-28 | Ibiden Co., Ltd. | Hot plate unit |
| US6646236B1 (en) | 1999-01-25 | 2003-11-11 | Ibiden Co., Ltd. | Hot plate unit |
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