JPH0660303A - Recording and reproducing method - Google Patents
Recording and reproducing methodInfo
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- JPH0660303A JPH0660303A JP22648892A JP22648892A JPH0660303A JP H0660303 A JPH0660303 A JP H0660303A JP 22648892 A JP22648892 A JP 22648892A JP 22648892 A JP22648892 A JP 22648892A JP H0660303 A JPH0660303 A JP H0660303A
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- magnetization
- recording
- information
- magnetic material
- temperature
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、光ディスク，磁気ディ
スクなどの情報の書き換え可能な不揮発記憶の分野にお
ける記録再生方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a recording / reproducing method in the field of rewritable non-volatile memory such as optical disks and magnetic disks.
【０００２】[0002]
【従来の技術】情報のファイル記憶の分野では、書き換
えが可能で、高密度な記憶方式として、磁気ディスクや
光ディスクが用いられている。これらは年々記録密度の
増加が図られているが、再生の際のＳＮを確保するのが
難しく限界に近づきつつある。また、これら方式におい
ては、媒体１枚の記録情報を他の媒体に複写する際に
は、逐次元の情報を読み取り、複写先の媒体に書き込む
操作が必要であり、大量の情報を一括で複写する方法の
開発が望まれていた。2. Description of the Related Art In the field of information file storage, magnetic disks and optical disks are used as rewritable and high-density storage systems. The recording density of these is increasing year by year, but it is difficult to secure the SN at the time of reproduction, and the limit is approaching. Further, in these methods, when copying the recorded information on one medium to another medium, it is necessary to sequentially read the original information and write it to the copy destination medium, so that a large amount of information is collectively copied. It was desired to develop a method of doing this.
【０００３】[0003]
【発明が解決しようとする課題】本発明は、上記問題点
に鑑みて提案されたもので、高密度記録においても高い
ＳＮを示す記録再生の方法を提供すること、ならびに簡
便に情報の一括複写を可能にする技術を提供することを
目的としている。SUMMARY OF THE INVENTION The present invention has been proposed in view of the above problems, and provides a recording / reproducing method exhibiting a high SN even in high density recording, and a simple batch copy of information. The purpose is to provide technology that enables
【０００４】[0004]
【課題を解決するための手段】上記の目的を達成するた
め、本発明は反強磁性−強磁性遷移を生ずる磁性材料
を、前記遷移を生ずる温度範囲に保持しつつ、前記磁性
材料を局所的に加熱し、前記加熱部分を強磁性または反
強磁性を生じせしめて情報の記録を行い、その後、前記
部分の磁化量，磁化変化あるいは磁化の方向等の状態量
を検出することによって情報の再生を行うことを特徴と
する記録再生方法を発明の要旨とするものである。さら
に、本発明は反強磁性−強磁性遷移を生ずる第１の磁性
材料を、前記遷移を生ずる温度範囲に保持しつつ、前記
磁性材料を局所的に加熱して、前記加熱部分に強磁性あ
るいは反強磁性を生じせしめて情報の記録を行った後、
前記温度範囲にて第２の磁性材料を密着させて前記情報
が記録された第１の磁性材料からの情報を第２の磁性材
料に転写させ、密着状態および脱着状態にて前記第２の
磁性材料からの磁化量，磁化変化あるいは磁化の方向等
の状態量を検出することによって情報の再生を行うこと
を特徴とする記録再生方法を発明の要旨とするものであ
る。In order to achieve the above object, the present invention locally maintains the magnetic material that causes an antiferromagnetic-ferromagnetic transition while maintaining the temperature range in which the transition occurs. Information is recorded by heating the heated part to cause ferromagnetism or antiferromagnetism to record the information, and then reproducing the information by detecting the state quantity such as the amount of magnetization, the change in magnetization or the direction of magnetization of the part. The present invention is directed to a recording / reproducing method characterized by performing the following. Furthermore, the present invention locally heats the magnetic material while maintaining the first magnetic material that causes an antiferromagnetic-ferromagnetic transition in a temperature range that causes the transition, so that the heated portion is ferromagnetic or After recording information by causing antiferromagnetism,
The information from the first magnetic material on which the information is recorded is transferred to the second magnetic material by bringing the second magnetic material into close contact within the temperature range, and the second magnetic material is brought into contact with and removed from the second magnetic material. The subject matter of the invention is a recording / reproducing method characterized in that information is reproduced by detecting a state quantity such as a magnetization amount from a material, a magnetization change, or a magnetization direction.
【０００５】[0005]
【作用】本発明によれば、磁化のヒステリシス現象を利
用して記録再生を行うため、高記録密度で高いＳＮ再生
及び多値記録を可能とすることができる。According to the present invention, since recording / reproducing is performed by utilizing the hysteresis phenomenon of magnetization, it is possible to realize high SN reproduction and multi-value recording at high recording density.
【０００６】まず、本発明の記録再生方法の原理を説明
する。反強磁性−強磁性遷移はＦｅＲｈ合金，ＨｆＴａ
Ｆｅ2 ，ＳｏＴｉＦｅ2 ，Ｃｏ（ＦｅＡｌ）2 系の金属
間化合物，Ｍｎ3 Ｐｔ規則合金等で発生し、ある温度に
おいて急激に反強磁性から強磁性へ、あるいは強磁性か
ら反強磁性へと変化する現象である。この遷移は一般的
にヒステリシス現象を示し、加熱時と冷却時ではその遷
移温度が異なる。本発明はこのヒステリシス現象を利用
して新しい記録再生方法を実現するものである。First, the principle of the recording / reproducing method of the present invention will be described. Antiferromagnetic-ferromagnetic transition is FeRh alloy, HfTa
It occurs in Fe 2 , SoTiFe 2 , Co (FeAl) 2 based intermetallic compounds, Mn 3 Pt ordered alloys, etc., and suddenly changes from antiferromagnetic to ferromagnetic or from ferromagnetic to antiferromagnetic at a certain temperature. It is a phenomenon. This transition generally exhibits a hysteresis phenomenon, and the transition temperature is different between heating and cooling. The present invention realizes a new recording / reproducing method by utilizing this hysteresis phenomenon.
【０００７】図１には反強磁性−強磁性遷移の温度に対
する磁化の変化の例を模式的に示した。まず、低温にお
いては反強磁性状態であるために、磁化はほとんど無い
が、ｔ2 の温度において強磁性に遷移するために、磁化
が発生する。一度ｔ2 以上に加熱した後にはｔ2 よりも
低い温度ｔ1 において強磁性から反強磁性に遷移し、温
度に対してヒステリシスを示す。ここで、反強磁性−強
磁性遷移を示す材料を、ヒステリシスを示す領域の温度
ｔb の環境に保持し、記録したい部分をｔ2 以上に加熱
すると、一度加熱されてからｔb に戻った領域のみＭ2
の磁化を有することとなる。このｔb の温度状態に保っ
ていれば、この磁化Ｍ2 の記録ビットは保持できる。温
度ｔb 、あるいはヒステリシスの開始，終了温度ｔ2 ，
ｔ1 は合金系，添加元素，圧力，印加磁場等によって、
容易に制御することができる。また、ｔ1 を室温以下
に、ｔ2 を室温以上に設定すれば、バイアス温度を特別
に設定しなくても、通常温度下での記録保持が可能であ
る。情報消去にあたっては、ｔb 状態からｔ1 以下の温
度にすれば、全体の磁化がＭ1 となるために、記録ビッ
トは消去される。また、ｔ2 以上に加熱しても同様に全
体がＭ2 となり、消去が可能である。従来の磁気ディス
クや光ディスク等における記録状態とここで大きく異な
ることは、記録された領域と、そうでない部分とでは、
磁化そのものの有無の状態が保持されていることであ
る。このため、磁気ヘッドや磁気抵抗効果素子で再生す
ると、ノイズレベルを非常に小さくでき、小さいビット
でも敏感に再生ができる。磁気ディスク，光ディスクに
おける記録媒体はある一定の磁化を有しており、この磁
化の方向を媒体の垂直方向、あるいは水平方向に変化さ
せて、ビットを記録する方式になっている。FIG. 1 schematically shows an example of changes in magnetization with temperature of antiferromagnetic-ferromagnetic transition. First, at a low temperature, there is almost no magnetization because it is in an antiferromagnetic state, but at the temperature of t 2 , the magnetization changes because it changes to ferromagnetic. After heating once to t 2 or more, at a temperature t 1 lower than t 2 , the state changes from ferromagnetism to antiferromagnetism and exhibits hysteresis with respect to temperature. Here, when a material exhibiting an antiferromagnetic-ferromagnetic transition is held in an environment of a temperature t b in a region exhibiting hysteresis and the portion to be recorded is heated to t 2 or more, it is once heated and then returns to t b . Area only M 2
It will have the magnetization of. If the temperature state of t b is kept, the recording bit of the magnetization M 2 can be kept. Temperature t b , or hysteresis start / end temperature t 2 ,
t 1 depends on the alloy system, additional elements, pressure, applied magnetic field, etc.
It can be controlled easily. Further, if t 1 is set to room temperature or lower and t 2 is set to room temperature or higher, it is possible to hold the record under the normal temperature without specially setting the bias temperature. When erasing information, if the temperature is changed from the t b state to a temperature of t 1 or lower, the entire magnetization becomes M 1 , so the recorded bits are erased. Further, even if heated to t 2 or more, the whole becomes similarly M 2 and can be erased. A big difference between the recording state in the conventional magnetic disk and the optical disk here is that the recorded area and the non-recorded area are
That is, the state of the presence or absence of magnetization itself is retained. Therefore, when reproducing with a magnetic head or a magnetoresistive effect element, the noise level can be made extremely small, and even small bits can be reproduced sensitively. A recording medium in a magnetic disk or an optical disc has a certain fixed magnetization, and a bit is recorded by changing the direction of the magnetization in a vertical direction or a horizontal direction of the medium.
【０００８】図２は従来の磁気ディスク，光ディスクに
おける媒体の記録状態を示すもので、（ａ）は磁気記録
における記録ビットの状態を示す。ここに矢印は磁化の
方向を示す。（ｂ）は光記録における記録ビットの状態
を示すものである。このため記録ビットとそうでない部
分との境界部分あるいは記録が不十分である領域は、記
録しようとするビットの磁化の方向とは異なる、逆方向
の磁化情報が存在することとなり、磁気ヘッドや光磁気
ヘッド等の磁気センサで再生する場合には直接のビット
情報とは逆のノイズ情報として検出されるため、ＳＮ比
の低下の原因となるという、本質的な問題がある。これ
に対して、本発明においては、記録ビット以外の領域は
磁化そのものがない、あるいは、記録ビットのみ磁化が
ない、という状態を保持するため、磁気センサによる再
生では、ビット以外からのノイズは本質的に存在せず、
高記録密度で記録しても高ＳＮ再生が実現できる。FIG. 2 shows a recording state of a medium in a conventional magnetic disk or optical disk, and FIG. 2A shows a state of recording bits in magnetic recording. The arrow here indicates the direction of magnetization. (B) shows the state of recording bits in optical recording. Therefore, in the boundary portion between the recording bit and the other portion or in the area where the recording is insufficient, the magnetization information in the opposite direction, which is different from the magnetization direction of the bit to be recorded, exists and the magnetic head or When reproducing with a magnetic sensor such as a magnetic head, since it is detected as noise information opposite to the direct bit information, there is an essential problem that it causes a decrease in the SN ratio. On the other hand, in the present invention, since the area other than the recording bit has no magnetization itself, or only the recording bit has no magnetization, noise generated from other than the bit is essential in reproduction by the magnetic sensor. Does not exist,
Even if recording is performed at a high recording density, high SN reproduction can be realized.
【０００９】図３は本発明における磁場印加書き込みに
よる多値記録の例を示すもので、（ａ）は記録の状態を
上から見た図であり、（ｂ）は断面の状態を示すもの
で、（ｃ）は光ヘッドによる再生波形の状態を示す。こ
のように書き込みの際に磁場を印加しておくと、記録ビ
ットの磁化の方向が固定されるので、記録情報は磁化の
有無だけではなく、磁化の方向の情報としても蓄積記憶
ができる。このため、多値情報記録方式としても利用で
きる。これらに加えての利点として、以下の点が挙げら
れる。すなわち、反強磁性−強磁性遷移による磁化変化
は、従来の磁気ディスク，光ディスク媒体における記録
磁化量と比較して非常に大きいため、記録情報を容易に
他の磁性材料に転写することができる。たとえば磁気デ
ィスク媒体の残留磁化は２５００〜１００００Ｇ、光磁
気ディスク媒体の残留磁化は２０００Ｇ以下であるが、
反強磁性−強磁性遷移材料であるＦｅＲｈでは約１４０
００Ｇの磁化が生じる。本発明の記録方法において、Ｔ
ｂＦｅ，ＧｄＴｂＦｅなどのアモルファス磁性薄膜、あ
るいはＹＧｄＧａＦｅＯ等のガーネット磁性薄膜を密着
した２層の構成にすれば、反強磁性−強磁性遷移材料の
記録情報を２次元的に一括に複写することができる、と
いう従来困難であった情報複写が可能となるものであ
る。3A and 3B show an example of multi-value recording by magnetic field application writing in the present invention. FIG. 3A is a top view of the recording state, and FIG. 3B is a sectional view. , (C) show the state of the reproduced waveform by the optical head. By thus applying a magnetic field during writing, the magnetization direction of the recording bit is fixed, so that the recorded information can be stored and stored not only as to the presence or absence of magnetization but also as information on the magnetization direction. Therefore, it can also be used as a multilevel information recording method. In addition to these, the following points can be mentioned. That is, since the change in magnetization due to the antiferromagnetic-ferromagnetic transition is very large compared to the recording magnetization amount in the conventional magnetic disk or optical disk medium, the recorded information can be easily transferred to another magnetic material. For example, the remanent magnetization of a magnetic disk medium is 2500 to 10,000 G, and the remanent magnetization of a magneto-optical disk medium is 2000 G or less.
About 140 in FeRh which is an antiferromagnetic-ferromagnetic transition material
A magnetization of 00G occurs. In the recording method of the present invention, T
If an amorphous magnetic thin film such as bFe or GdTbFe or a garnet magnetic thin film such as YGdGaFeO is adhered in a two-layer structure, the record information of the antiferromagnetic-ferromagnetic transition material can be two-dimensionally copied at once. It is possible to copy information, which has been difficult in the past.
【００１０】[0010]
【実施例】次に本発明の実施例について説明する。 〔実施例１〕ガラスディスク基板上にスパッタにて膜厚
約１０００ÅのＦｅ0.5 Ｒｈ0.5 合金薄膜を形成した。
図４はＦｅ0.5 Ｒｈ0.5 薄膜の温度−磁化の関係を示す
もので、横軸に温度、縦軸に磁化の状態を示す。この薄
膜の磁化の温度変化は図４に示すように、ｔ2が８０
℃、ｔ1 が−１５℃、強磁性状態の磁化Ｍ2 約１０００
Ｇ、反強磁性領域での磁化Ｍ1 約１２Ｇとなるヒステリ
シスを示した。波長８３３ｎｍの半導体レーザによる力
−効果の温度依存性も図５のようなヒステリシスを示し
た。図５はＦｅ0.5 Ｒｈ0.5 薄膜の温度−力−回転角
（波長８３３ｎｍ）の関係を示す。この薄膜を室温状態
に保持しつつ、半導体レーザの光ヘッドにより円周方向
に１μｍの間隔で６０ｍＷで加熱を行い、１５ｍＷで再
生したところ、ＣＮ比５２ｄＢの再生ができた。また、
連続的に１５ｍＷで照射することで、消去が可能であっ
た。EXAMPLES Next, examples of the present invention will be described. Example 1 An Fe 0.5 Rh 0.5 alloy thin film having a film thickness of about 1000Å was formed on a glass disk substrate by sputtering.
FIG. 4 shows the temperature-magnetization relationship of the Fe 0.5 Rh 0.5 thin film, where the horizontal axis represents temperature and the vertical axis represents the magnetization state. The temperature change in the magnetization of the thin film as shown in FIG. 4, t 2 is 80
℃, t 1 -15 ℃, ferromagnetic state magnetization M 2 about 1000
G, magnetization in the antiferromagnetic region M 1 has a hysteresis of about 12 G. The temperature dependence of the force-effect by the semiconductor laser having a wavelength of 833 nm also showed hysteresis as shown in FIG. FIG. 5 shows the relationship of temperature-force-rotation angle (wavelength 833 nm) of the Fe 0.5 Rh 0.5 thin film. While keeping this thin film at room temperature, it was heated at 60 mW in the circumferential direction at an interval of 1 μm by an optical head of a semiconductor laser and was reproduced at 15 mW. As a result, a CN ratio of 52 dB was reproduced. Also,
It was possible to erase by continuously irradiating with 15 mW.
【００１１】〔実施例２〕Ｈｆ0.8 Ｔａ0.2 Ｆｅ2 薄膜
をガラス上に膜厚３０００Å形成した。磁化の温度変化
は図６のようになった。実施例１とは異なり、ｔｂ＝−
９０℃保持状態で局所的に加熱すると、加熱領域の磁化
が消失する。雰囲気温度を−９０℃に保ちつつ、Ａｒレ
ーザで１０μｍ間隔で加熱し、光ヘッドで再生したとこ
ろ、再生が可能であった。Example 2 A Hf 0.8 Ta 0.2 Fe 2 thin film was formed on glass to a thickness of 3000 Å. The change in magnetization with temperature is as shown in FIG. Unlike Example 1, tb =-
When locally heated at 90 ° C., the magnetization of the heated region disappears. When the temperature was kept at -90 [deg.] C., heating was performed with an Ar laser at intervals of 10 [mu] m and reproduction was performed with an optical head, reproduction was possible.
【００１２】〔実施例３〕Ｆｅ0.52Ｒｈ0.48合金薄膜３
０００Åを実施例１と同様にガラスディスク基板上に形
成した。磁化温度変化は図７に示した。この薄膜につい
て、雰囲気温度を６０℃にして、膜面垂直に６００Ｇの
磁場を５ｋＨｚで極性を変化させて、これに同期させな
がら、半導体レーザで８０ｍＷで記録した。これを同ヘ
ッド１０ｍＷで再生した波形を図８に示す。記録磁化が
膜面下部を向いているビットからの情報、膜面上部を向
いているヒットからの再生情報、記録しない領域からの
情報の３値のシグナルが明瞭に認められ、多値情報記録
が実現できた。なお、バイアス磁場は膜面内方向に印加
することもできる。[Example 3] Fe 0.52 Rh 0.48 alloy thin film 3
000Å was formed on the glass disk substrate in the same manner as in Example 1. The change in magnetization temperature is shown in FIG. This thin film was recorded at 80 mW with a semiconductor laser while setting the atmosphere temperature to 60 ° C., changing the polarity of a magnetic field of 600 G perpendicularly to the film surface at 5 kHz, and synchronizing with this. FIG. 8 shows a waveform reproduced by the head of 10 mW. A ternary signal of information from a bit whose recording magnetization is directed to the lower part of the film surface, reproduced information from a hit which is directed to the upper part of the film surface, and information from an unrecorded area is clearly recognized, and multi-valued information recording is possible. It was realized. The bias magnetic field can be applied in the in-plane direction of the film.
【００１３】〔実施例４〕第２層と組み合わせた記録，
転写，再生の実施例を示す。図９は転写の状態を示すも
ので、図において、１はガラス基板、２はＧｄＴｂＦｅ
Ｃｏ薄膜、３はＦｅＲｈ薄膜、４はガラス基板、５は記
録ビットを示す。実施例３で用いた薄膜について、同様
に６０℃の雰囲気下で、膜面垂直方向に５ｋＯｅの磁場
を印加しながら、８０ｍＷのレーザビームにてビットを
記録した。加熱部分のみ垂直方向に磁化を有する領域が
形成，保持されている。この後に、あらかじめＦｅＲｈ
薄膜に記録する際の磁場と反対方向に磁化させた第２の
磁性薄膜Ｇｄ11.7Ｔｂ8.6 Ｆｅ71.1Ｃｏ8.6 （膜厚：１
５００Å）をＦｅＲｈ薄膜に相対するように密着させ
た。このＧｄ11.7Ｔｂ8.6 Ｆｅ71.1Ｃｏ8.6 薄膜は力−
効果が大きく、垂直磁気異方性を有しており、図１０に
示す磁気特性の温度が生じる。図において、Ｈc は保持
力、Ｍs は飽和磁化を示す。環境温度６０℃において
は、保磁力約４００Ｏｅであり、図７の磁化状態Ｍ2の
記録ビットからの漏洩磁場によりビット情報のみがＧｄ
11.7Ｔｂ8.6 Ｆｅ71.1Ｃｏ8.6 薄膜に転写された。密着
した状態で第２層の方向から（図９では上部から）光ヘ
ッドを用いて再生が可能であり、第１層のみのビットの
再生よりも高感度で検出できた。さらに密着状態から引
き離し、室温の環境下においても、Ｇｄ11.7Ｔｂ8.6 Ｆ
ｅ71.1Ｃｏ8.6 薄膜の保磁力は室温にてさらに増大する
ため、情報はさらに安定化され保存ができる。第２層単
独でも記録状態を再生できる。また、同様にして、ヒー
トペンでまず、ＦｅＲｈ薄膜に絵や文字を記録し、Ｇｄ
ＴｂＦｅＣｏ薄膜を密着させることにより、これらも転
写することができた。上記のように、第１層に記録後、
第２層を密着させることによって、再生感度の向上が
はかれる。第１層の情報をオリジナルとして、何枚で
も２次元情報を一括に転写ができる、という効果が現れ
てくることが実証された。[Example 4] Recording in combination with the second layer,
An example of transfer and reproduction will be shown. FIG. 9 shows a transfer state, in which 1 is a glass substrate and 2 is GdTbFe.
Co thin film, 3 FeRh thin film, 4 glass substrate, 5 recording bits. With respect to the thin film used in Example 3, bits were recorded with a laser beam of 80 mW while applying a magnetic field of 5 kOe in the direction perpendicular to the film surface in the same atmosphere at 60 ° C. An area having magnetization in the vertical direction is formed and held only in the heated portion. After this, FeRh
The second magnetic thin film Gd 11.7 Tb 8.6 Fe 71.1 Co 8.6 (thickness: 1
500 Å) was adhered so as to face the FeRh thin film. This Gd 11.7 Tb 8.6 Fe 71.1 Co 8.6 thin film is
It has a large effect, has perpendicular magnetic anisotropy, and causes the temperature of the magnetic characteristics shown in FIG. In the figure, H c represents coercive force and M s represents saturation magnetization. At an ambient temperature of 60 ° C., the coercive force is about 400 Oe, and only the bit information is Gd due to the leakage magnetic field from the recording bit in the magnetization state M 2 of FIG.
Transferred to a 11.7 Tb 8.6 Fe 71.1 Co 8.6 thin film. It is possible to perform reproduction from the direction of the second layer (from the top in FIG. 9) in the state of being in close contact with the optical head, and it is possible to detect with higher sensitivity than the reproduction of the bits of the first layer only. Furthermore, Gd 11.7 Tb 8.6 F is released from the close contact state even at room temperature.
Since the coercive force of the e 71.1 Co 8.6 thin film further increases at room temperature, information can be further stabilized and stored. The recorded state can be reproduced by the second layer alone. Similarly, with a heat pen, first record a picture or character on the FeRh thin film and
These could also be transferred by bringing the TbFeCo thin film into close contact. As described above, after recording on the first layer,
The reproduction sensitivity can be improved by bringing the second layer into close contact. It was proved that the effect of being able to transfer any number of pieces of two-dimensional information at one time using the information of the first layer as an original appears.
【００１４】[0014]
【発明の効果】以上説明したように、反強磁性−強磁性
遷移を生ずる磁性材料を、前記遷移を生ずる温度範囲に
保持しつつ、前記磁性材料を局所的に加熱し、前記加熱
部分を強磁性または反強磁性を生じせしめて情報の記録
を行い、その後、前記部分の磁化量，磁化変化あるいは
磁化の方向等の状態量を検出する本発明の記録再生方法
を用いれば、高記録密度の高ＳＮ再生，多値記録が可能
であり、また情報の２次元的な一括複写が可能となる。As described above, while maintaining the magnetic material that causes the antiferromagnetic-ferromagnetic transition within the temperature range that causes the transition, the magnetic material is locally heated and the heated portion is strengthened. If the recording / reproducing method of the present invention is used, in which information is recorded by causing magnetism or antiferromagnetism, and then the state quantity such as the magnetization amount, the magnetization change or the magnetization direction of the portion is detected. High SN reproduction and multilevel recording are possible, and two-dimensional batch copying of information is possible.
【図１】反強磁性−強磁性遷移磁性材料の磁化の温度変
化の例を示す。FIG. 1 shows an example of temperature change of magnetization of an antiferromagnetic-ferromagnetic transition magnetic material.
【図２】従来の磁気ディスク，光ディスクにおける媒体
の記録状態を示す。FIG. 2 shows a recording state of a medium in a conventional magnetic disk or optical disk.
【図３】本発明における磁場印加書き込みによる、多値
記録の例を示す。FIG. 3 shows an example of multi-level recording by magnetic field application writing in the present invention.
【図４】実施例１で用いたＦｅ0.5 Ｒｈ0.5 薄膜の温度
−磁化の関係を示す。4 shows the temperature-magnetization relationship of the Fe 0.5 Rh 0.5 thin film used in Example 1. FIG.
【図５】実施例１で用いたＦｅ0.5 Ｒｈ0.5 薄膜の温度
−力−回転角（波長８３３ｎｍ）の関係を示す。5 shows the relationship of temperature-force-rotation angle (wavelength 833 nm) of the Fe 0.5 Rh 0.5 thin film used in Example 1. FIG.
【図６】実施例２で用いたＨｆ0.8 Ｔａ0.2 Ｆｅ2 薄膜
の温度−磁化の関係を示す。FIG. 6 shows the temperature-magnetization relationship of the Hf 0.8 Ta 0.2 Fe 2 thin film used in Example 2.
【図７】実施例３で用いたＦｅ0.52Ｒｈ0.48薄膜の温度
−磁化の関係を示す。7 shows the temperature-magnetization relationship of the Fe 0.52 Rh 0.48 thin film used in Example 3. FIG.
【図８】実施例３における再生波形を示す。FIG. 8 shows a reproduced waveform in Example 3.
【図９】実施例４の転写方法を示す。FIG. 9 shows the transfer method of Example 4.
【図１０】実施例４におけるＧｄＴｂＦｅＣｏ薄膜の磁
気特性の温度変化を示す。FIG. 10 shows a temperature change of magnetic characteristics of a GdTbFeCo thin film in Example 4.
１ ガラス基板 ２ ＧｄＴｂＦｅＣｏ薄膜 ３ ＦｅＲｈ薄膜 ４ ガラス基板 ５ 記録ビット 1 glass substrate 2 GdTbFeCo thin film 3 FeRh thin film 4 glass substrate 5 recording bit
Claims (4)
を、前記遷移を生ずる温度範囲に保持しつつ、前記磁性
材料を局所的に加熱し、前記加熱部分を強磁性または反
強磁性を生じせしめて情報の記録を行い、その後、前記
部分の磁化量，磁化変化あるいは磁化の方向等の状態量
を検出することによって情報の再生を行うことを特徴と
する記録再生方法。1. A magnetic material that causes an antiferromagnetic-ferromagnetic transition is maintained locally in a temperature range that causes the transition, and the magnetic material is locally heated, so that the heated portion is made ferromagnetic or antiferromagnetic. A recording / reproducing method characterized in that information is recorded by causing it to occur, and thereafter, information is reproduced by detecting a state quantity such as a magnetization amount, a magnetization change or a magnetization direction of the portion.
温あるいは高温にすることにより、記録情報の消去を行
うことを特徴とする請求項１記載の記録再生方法。2. The recording / reproducing method according to claim 1, wherein the recorded information is erased by making the temperature of the magnetic material lower or higher than a temperature range in which transition occurs.
て、垂直方向あるいは面内方向に、一定のバイアス磁場
あるいは周期的に変化する交番磁場を印加することを特
徴とする請求項１記載の記録再生方法。3. A constant bias magnetic field or an alternating magnetic field that periodically changes is applied to the surface of the magnetic material in the perpendicular or in-plane direction when recording information. Recording / playback method described.
性材料を、前記遷移を生ずる温度範囲に保持しつつ、前
記磁性材料を局所的に加熱して、前記加熱部分に強磁性
あるいは反強磁性を生じせしめて情報の記録を行った
後、前記温度範囲にて第２の磁性材料を密着させて前記
情報が記録された第１の磁性材料からの情報を第２の磁
性材料に転写させ、密着状態および脱着状態にて前記第
２の磁性材料からの磁化量，磁化変化あるいは磁化の方
向等の状態量を検出することによって情報の再生を行う
ことを特徴とする記録再生方法。4. A first magnetic material that causes an antiferromagnetic-ferromagnetic transition is maintained locally in a temperature range where the transition occurs, and the magnetic material is locally heated to cause a ferromagnetic or After the information is recorded by causing antiferromagnetism, the second magnetic material is brought into close contact with the second magnetic material in the temperature range by bringing the second magnetic material into contact with the second magnetic material. A recording / reproducing method characterized in that information is reproduced by transferring and detecting a state quantity such as a magnetization amount, a magnetization change or a magnetization direction from the second magnetic material in a close contact state and a detached state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22648892A JP3128095B2 (en) | 1992-08-03 | 1992-08-03 | Recording / playback method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22648892A JP3128095B2 (en) | 1992-08-03 | 1992-08-03 | Recording / playback method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0660303A true JPH0660303A (en) | 1994-03-04 |
| JP3128095B2 JP3128095B2 (en) | 2001-01-29 |
Family
ID=16845887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22648892A Expired - Lifetime JP3128095B2 (en) | 1992-08-03 | 1992-08-03 | Recording / playback method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3128095B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010103982A1 (en) * | 2009-03-11 | 2010-09-16 | 昭和電工株式会社 | Information storage medium and information storage device |
-
1992
- 1992-08-03 JP JP22648892A patent/JP3128095B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010103982A1 (en) * | 2009-03-11 | 2010-09-16 | 昭和電工株式会社 | Information storage medium and information storage device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3128095B2 (en) | 2001-01-29 |
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