JPH066012A - Coating structure for electric circuit - Google Patents
Coating structure for electric circuitInfo
- Publication number
- JPH066012A JPH066012A JP18179192A JP18179192A JPH066012A JP H066012 A JPH066012 A JP H066012A JP 18179192 A JP18179192 A JP 18179192A JP 18179192 A JP18179192 A JP 18179192A JP H066012 A JPH066012 A JP H066012A
- Authority
- JP
- Japan
- Prior art keywords
- electric circuit
- layer
- wiring
- conductor
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、接触・導電部品、配線
基板、プリント基板、半導体素子等の電気回路の被覆構
造に係り、特に、微細な電気回路配線を形成する半導体
基材中に配設した導電体材料の表面の被覆構造に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a covering structure for an electric circuit such as a contact / conductive part, a wiring board, a printed circuit board, a semiconductor element, etc., and more particularly to a semiconductor substrate for forming fine electric circuit wiring. The present invention relates to a coating structure on the surface of the provided conductor material.
【０００２】[0002]
【従来の技術】近年半導体素子を始めとする微細な電気
回路を形成する導電体材料に表面被覆を施したいという
要求が高まっている。例えば、従来から半導体素子の導
電線路としての配線網を形成するＡｌ合金材料は通常絶
縁層のＳｉＯ2 層との間に相互の構成元素の相互拡散を
防止するための障壁層を設けなければならない。そのた
め従来は、拡散を防止するための障壁層としてＴｉＮ層
を５００〜１，０００オングストローム介在させるよう
にしている場合がある。2. Description of the Related Art In recent years, there has been an increasing demand for surface coating of conductive materials forming fine electric circuits such as semiconductor devices. For example, conventionally, an Al alloy material forming a wiring network as a conductive line of a semiconductor element must be provided with a barrier layer for preventing mutual diffusion of constituent elements between the Al alloy material and an SiO 2 layer which is an insulating layer. . Therefore, conventionally, a TiN layer may be interposed between 500 and 1,000 angstroms as a barrier layer for preventing diffusion.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、近年微
細な電気回路を形成する導電体材料の表面被覆に対する
要求はますます厳しくなる傾向にある。特に半導体素子
の配線工程においては集積度を更に増大させたいという
要求からアルミニウム合金に変わる低電気抵抗材料によ
る微細パターン形成技術の確立が切望されている。However, in recent years, the demand for the surface coating of a conductive material forming a fine electric circuit tends to become more and more severe. In particular, in the wiring process of semiconductor elements, there is a strong demand for establishment of a fine pattern forming technique using a low electric resistance material which can be replaced with an aluminum alloy due to a demand for further increasing the degree of integration.
【０００４】これは、集積度が高くなるにつれて、電流
密度が増加するため熱応力や温度上昇を生じ、従来のＡ
ｌ合金ではストレスマイグレーションやエレクトロマイ
グレーションによる断線の恐れが増すことにも起因して
いる。これを避けるため、Ａｌ合金へのＣｕの添加や高
融点金属との積層化が行われつつあるが万全な物ではな
い。This is because the current density increases as the degree of integration increases, causing thermal stress and temperature rise.
This is also caused by the increased risk of wire breakage due to stress migration and electromigration in the l-alloy. In order to avoid this, addition of Cu to the Al alloy and lamination with a refractory metal are being carried out, but this is not a perfect thing.
【０００５】そこで、通電による過度の発熱を避けるた
め、従来のＡｌ合金とは根本的に異なる導電性の良い材
料を配線形成に採用することが必然的に要求されてい
る。現用材料のうち、Ａｌ系よりも電気抵抗の小さい材
料としては、ＣｕとＡｇがある。このような低電気抵抗
材料を用いても配線工程の後から実施する高温のプロセ
スや、完成後の動作時に流れる電流密度が高いことによ
る発熱に伴う配線材料自体及び周囲材料の昇温によっ
て、配線材料構成元素の原子が周囲の雰囲気と化学反応
を起こしたり、拡散によって移動し、周囲材料内部を移
動したりする現象が起きることは避けられない。Therefore, in order to avoid excessive heat generation due to energization, it is inevitably required to employ a material having good conductivity, which is fundamentally different from the conventional Al alloy, for wiring formation. Among the current materials, Cu and Ag are materials having a smaller electric resistance than Al-based materials. Even if such a low electrical resistance material is used, the wiring will be heated by the high temperature process performed after the wiring process and the temperature rise of the wiring material itself and the surrounding material due to the heat generation due to the high current density flowing during the operation after completion. It is unavoidable that the atoms of the material constituent elements chemically react with the surrounding atmosphere or move by diffusion to move inside the surrounding material.
【０００６】これが著しくなると、配線材料自体及び周
囲の絶縁材料自体が劣化して、本体の機能を損なう恐れ
が大きい。このような弊害が起きれば、折角電気抵抗の
低い材料を使ってもその有用性を十分生かすことは困難
となる。したがって、高温での配線材料の構成原子の周
囲との化学反応や、拡散による移動を防止するための手
段を講じなければならない。If this becomes remarkable, the wiring material itself and the surrounding insulating material itself are deteriorated, and there is a great possibility that the function of the main body is impaired. If such an adverse effect occurs, it will be difficult to make full use of its usefulness even if a material having a low electrical resistance is used. Therefore, it is necessary to take measures to prevent the chemical reaction of the constituent atoms of the wiring material with the surroundings at high temperature and the migration due to diffusion.
【０００７】本発明は上述の必要性を解決するための手
段として考案されたものであって、電気回路配線形成後
の配線材料構成原子の周囲雰囲気との化学反応、及び又
は、熱拡散による移動を低減又は、事実上阻止し、通常
の高温表面反応や熱拡散に起因する配線材料の経時的な
劣化を防止することを可能とする配線材料表面の被覆構
造を提供することを目的とする。The present invention was devised as a means for solving the above-mentioned need, and after the formation of electric circuit wiring, the wiring material constituting atoms are chemically reacted with the ambient atmosphere and / or moved by thermal diffusion. It is an object of the present invention to provide a coating structure for the surface of a wiring material that can reduce or virtually prevent the above and prevent deterioration of the wiring material over time due to ordinary high temperature surface reaction and thermal diffusion.
【０００８】[0008]
【課題を解決するための手段】本発明は、電気回路を構
成する導電体材料の表面を、該導電体材料の表面反応、
及び又は、外部への拡散を阻止又は抑制する材料で被覆
することを特徴とする。According to the present invention, the surface of a conductor material constituting an electric circuit is treated by a surface reaction of the conductor material,
And / or coating with a material that prevents or suppresses diffusion to the outside.
【０００９】[0009]
【作用】半導体材料の表面に、接触、堆積、積層、又は
載架された周囲環境との反応性が相対的に乏しい材料
は、高温プロセスや、回路動作中の高温環境に曝されて
も、表面の化学反応や、原子の熱拡散による導電体材料
の移動を阻止又は低減することができるので、経時的な
配線構造、即ち、電気回路の劣化を抑制又は防止するこ
とができる。When the surface of the semiconductor material has relatively low reactivity with the surrounding environment, such as contact, deposition, lamination, or mounting, even if exposed to a high temperature process or a high temperature environment during circuit operation, Since it is possible to prevent or reduce the movement of the conductive material due to the chemical reaction on the surface and the thermal diffusion of atoms, it is possible to suppress or prevent the deterioration of the wiring structure, that is, the electric circuit with time.
【００１０】[0010]
【実施例】前述した目的を達成するための具体的な手段
を公表されたデータ例を用いて説明する。本発明による
電気回路の被覆構造は、配線材料による電気回路の外側
から高温で耐食性が良く、かつ、それ自身の内部におけ
る金属原子の熱拡散を生じにくい金属による被覆を行う
ことを特徴としている。ここで、被覆に用いる金属は高
温での耐食性、耐酸化性が良く、かつ、そのバルク内部
に於けるＣｕやＡｇ等のように電気伝導性の良い金属元
素の原子の拡散係数が極めて小さいものを用いている。EXAMPLES Specific means for achieving the above-mentioned object will be described using published data examples. The coating structure of an electric circuit according to the present invention is characterized in that the wiring is covered with a metal having good corrosion resistance from the outside of the electric circuit at a high temperature and hardly causing thermal diffusion of metal atoms inside itself. Here, the metal used for the coating has good corrosion resistance and oxidation resistance at high temperatures, and has a very small diffusion coefficient of atoms of a metal element having good electric conductivity such as Cu and Ag inside the bulk. Is used.
【００１１】図３はＡｌ，Ｃｕ，Ａｇ，Ａｕの電気比抵
抗の温度依存性を示す。図３で明らかなように、常温〜
８００℃までの領域で、Ｃｕ，Ａｇの電気抵抗は相対的
に小さいので導電体材料単体として電気回路の配線形成
に適する。尚、図３は金属便覧（Ｍｅｔａｌｓ Ｒｅｆ
ｅｒａｎｃｅ Ｂｏｏｋ、５ｔｈ ｅｄ、１９７６Ｂｕ
ｔｔｅｒｗｏｒｔｈｓ）記載のデータから作図したもの
であるFIG. 3 shows the temperature dependence of the electrical resistivity of Al, Cu, Ag and Au. As is clear from FIG.
Since the electric resistance of Cu and Ag is relatively small in the region up to 800 ° C., it is suitable for forming the wiring of an electric circuit as a single conductor material. In addition, Fig. 3 shows the Metals Ref.
erance Book, 5th ed, 1976 Bu
It was drawn from the data described in
【００１２】一方、図４は、種々の金属中のＣｕの、図
５は、種々の金属中のＡｇのそれぞれの原子の拡散係数
を示す。図４，図５も金属便覧（Ｍｅｔａｌｓ Ｒｅｆ
ｅｒｅｎｃｅ Ｂｏｏｋ、５ｔｈ ｅｄ．１９７６、Ｂ
ｕｔｔｅｒｗｏｒｔｈｓ）記載のデータから作図したも
のである。図４，５で明らかなように、Ｃｕ，Ａｇの種
々の媒質金属中での拡散係数は、それぞれの配線用該導
電体金属と媒質金属との組合せによって変化するので、
高温で化学的に安定で、かつ、それぞれの配線材料に適
した媒質金属を被覆用に選定、適用することが出来る。On the other hand, FIG. 4 shows the diffusion coefficient of each atom of Cu in various metals, and FIG. 5 shows the diffusion coefficient of each atom of Ag in various metals. 4 and 5 are also Metals Ref.
erence Book, 5th ed. 1976, B
It is plotted from the data described in the Uterworths). As is clear from FIGS. 4 and 5, since the diffusion coefficients of Cu and Ag in various medium metals vary depending on the combination of the conductor metal for wiring and the medium metal,
A medium metal that is chemically stable at high temperatures and that is suitable for each wiring material can be selected and applied for coating.
【００１３】この拡散防止のための障壁層を形成するた
めには、例えば常法による液相、気相、溶融金属、粉末
などを用いる方法を使うこと、即ち、導電体材料の表面
に、障壁層となる材料を接触、堆積、積層、載架するこ
とが出来る。代表的な被覆方法、即ち、材料を接触、堆
積、積層、載架する方法の例をまとめて表１に示す。当
然のことながら表１に示す以外の方法を使っても良い。 In order to form the barrier layer for preventing the diffusion, for example, a method using a liquid phase, a gas phase, a molten metal, a powder or the like by a conventional method is used, that is, a barrier is formed on the surface of the conductor material. Layered materials can be contacted, deposited, laminated, and mounted. An example of a typical coating method, that is, a method of contacting, depositing, laminating, and placing materials is shown in Table 1. As a matter of course, methods other than those shown in Table 1 may be used.
【００１４】前述した構成からなる本発明によれば、電
気回路を形成する配線材料である導電体材料の外側から
高温で安定で、かつ、それ自身の内部において、導電体
材料を構成する元素の原子の拡散が遅い金属を被覆する
ことによって、該部材製造途中の高温プロセスや、回路
動作中のジュール発熱によって、高温環境に曝されても
表面の高温化学反応や、原子の熱拡散による移動を阻
止、又は低減することが出来るので、経時的な配線材料
の劣化を抑制又は防止することが出来る。According to the present invention having the above-described structure, the elements which are stable in high temperature from the outside of the conductor material, which is the wiring material forming the electric circuit, and which are inside the conductor material, are formed. By coating a metal with a slow diffusion of atoms, high-temperature processes during the manufacturing of the member and Joule heat generation during circuit operation prevent high-temperature chemical reactions on the surface and migration due to thermal diffusion of atoms even when exposed to a high-temperature environment. Since it can be prevented or reduced, deterioration of the wiring material with time can be suppressed or prevented.
【００１５】次に本発明に係わる、電気回路を構成する
導電体材料表面の被覆構造の実施例を図１を参照して説
明する。Next, an embodiment of a coating structure on the surface of a conductor material forming an electric circuit according to the present invention will be described with reference to FIG.
【００１６】図１は本発明の第１の実施例の電気回路の
被覆構造の断面図を示す。絶縁体又は半導体の基材４上
にＣｕ層２とＡｇ層１を埋め込んだ２層構造の配線、即
ち、導電体層断面を示している。この電気回路配線の導
電体材料の外側をＮｉＳＯ4−６Ｈ2Ｏに錯化剤と還元剤
を添加、混合した溶液に接触し、無電解メッキを行うこ
とによって、Ａｇ層１の上にＮｉ−Ｂ合金３を堆積した
ものである。図４、５のデータより明らかなように、Ａ
ｇ，ＣｕはＮｉ中での拡散係数が極めて小さい。またＮ
ｉ−Ｂ合金は元来高温でも化学的に安定な特性を有して
いる。従って、Ｎｉ−Ｂ合金は、導電体材料であるＡｇ
層とＣｕ層に対して、表面の高温化学反応や原子の熱拡
散による移動を阻止、低減する障壁層としての役割を果
たす。FIG. 1 shows a sectional view of a coating structure for an electric circuit according to a first embodiment of the present invention. A wiring having a two-layer structure in which a Cu layer 2 and an Ag layer 1 are embedded on an insulating or semiconductor base material 4, that is, a conductor layer cross section is shown. The outside of the conductor material of the electric circuit wiring is brought into contact with a solution in which a complexing agent and a reducing agent are added to NiSO 4 -6H 2 O and mixed, and electroless plating is performed to form Ni-on the Ag layer 1. B alloy 3 is deposited. As is clear from the data in FIGS.
The diffusion coefficients of g and Cu in Ni are extremely small. Also N
The i-B alloy originally has the property of being chemically stable even at high temperatures. Therefore, the Ni-B alloy is Ag, which is a conductor material.
For the Cu layer and the Cu layer, it plays a role as a barrier layer that blocks and reduces the high temperature chemical reaction on the surface and the movement of atoms due to thermal diffusion.
【００１７】図２は本発明の第２の実施例の電気回路の
被覆構造の断面図であり、基材表面付近の基材に埋め込
まれた配線材料で、配線の中央が表面より凹んで溝状に
なっているものを示す。図１に示す実施例と同様に、配
線は絶縁体又は半導体の基材４上にＣｕ層２とＡｇ層１
を埋め込んだ２層構造を持っている。FIG. 2 is a cross-sectional view of a covering structure for an electric circuit according to a second embodiment of the present invention, in which a wiring material is buried in a base material near the surface of the base material and the center of the wiring is recessed from the surface to form a groove Shows what is in shape. Similar to the embodiment shown in FIG. 1, the wiring is composed of a Cu layer 2 and an Ag layer 1 on an insulating or semiconductor substrate 4.
It has a two-layer structure with embedded.
【００１８】この配線表面は第１の実施例と同様、Ｎｉ
ＳＯ4−６Ｈ2Ｏに錯化剤と還元剤を添加、混合した溶液
に接触して、無電解メッキを行うことによって図２に示
すようにＣｕ層２及びＡｇ層１の上にＮｉ−Ｂ合金３を
堆積したものである。尚、Ａｇ層とＣｕ層の二層構造の
導電体材料の製造方法については、特願平４−９１７７
８号特許出願にその詳細が開示されている。The wiring surface is made of Ni as in the first embodiment.
A complexing agent and a reducing agent are added to SO 4 -6H 2 O, and the mixture is brought into contact with a mixed solution to perform electroless plating, whereby Ni-B is deposited on the Cu layer 2 and the Ag layer 1 as shown in FIG. Alloy 3 is deposited. Regarding the method for producing a conductor material having a two-layer structure of an Ag layer and a Cu layer, see Japanese Patent Application No. 4-9177.
Details are disclosed in the patent application No. 8.
【００１９】[0019]
【発明の効果】以上に説明したように本発明によれば、
導電体材料の主として下地の反対側表面上に高温で安定
で、かつ、その内部で熱拡散を起こしにくい金属による
被覆を行うので、高温プロセス中や、高温動作時に電気
回路配線材料の導電体表面が周囲環境と反応したり、そ
の構成元素が熱拡散によって移動することを抑制、又は
防止することが出来る。それによって、電気回路、又は
それを用いた部品、製品の形成過程又は、製品完成後の
動作時における配線材料、即ち電気回路の経時的な劣化
を抑制、又は防止することが出来る。As described above, according to the present invention,
The conductor surface of the electric circuit wiring material is mainly coated on the surface of the conductor material on the side opposite to the base with a metal that is stable at high temperatures and does not easily cause thermal diffusion inside the conductor material. React with the surrounding environment, and the constituent elements thereof can be suppressed or prevented from moving by thermal diffusion. As a result, it is possible to suppress or prevent the deterioration of the electric circuit, the parts using the electric circuit, the process of forming the product, or the wiring material during the operation after the product is completed, that is, the electric circuit, with time.
【図１】本発明の第１の実施例の電気回路の被覆構造の
断面図。FIG. 1 is a sectional view of a coating structure for an electric circuit according to a first embodiment of the present invention.
【図２】本発明の第２の実施例の電気回路の被覆構造の
断面図。FIG. 2 is a sectional view of a covering structure for an electric circuit according to a second embodiment of the present invention.
【図３】電気抵抗の相対的に小さな金属材料の温度と電
気比抵抗の関係を示す説明図。FIG. 3 is an explanatory diagram showing the relationship between the temperature and the electrical resistivity of a metal material having a relatively low electrical resistance.
【図４】電気抵抗の相対的に小さな金属材料の一つであ
るＣｕの媒質金属中における拡散係数と絶対温度の逆数
の関係を示す説明図。FIG. 4 is an explanatory diagram showing a relationship between a diffusion coefficient of Cu, which is one of metal materials having a relatively small electric resistance, in a medium metal and an inverse number of an absolute temperature.
【図５】電気抵抗の相対的に小さなもう一つの金属材料
であるＡｇの媒質金属中における拡散係数と絶対温度の
逆数の関係を示す説明図。FIG. 5 is an explanatory diagram showing the relationship between the diffusion coefficient of Ag, which is another metal material having a relatively small electric resistance, in the medium metal and the reciprocal of the absolute temperature.
１ Ａｇ層 ２ Ｃｕ層 ３ Ｎｉ−Ｂ合金被覆層 ４ 基材 1 Ag layer 2 Cu layer 3 Ni-B alloy coating layer 4 Base material
Claims (4)
した導電体材料の表面に、周囲環境との反応性が相対的
に乏しい材料を接触、堆積、積層、又は載架したことを
特徴とする電気回路の被覆構造。1. A material having a relatively low reactivity with the surrounding environment is contacted, deposited, laminated, or placed on the surface of an insulator and / or a conductor material provided in a semiconductor substrate. A covering structure for an electric circuit characterized by.
した導電体材料の表面に、該導電体材料の元素の拡散が
相対的に容易でない材料を接触、堆積、積層、又は載架
したことを特徴とする電気回路の被覆構造。2. A material on which the diffusion of the elements of the conductor material is relatively easy to contact, deposit, laminate, or mount on the surface of the insulator and / or the conductor material provided in the semiconductor substrate. A covering structure of an electric circuit characterized by being hung.
した導電体材料の表面をＮｉ又はＮｉ合金で被覆したこ
とを特徴とする請求項１または請求項２の電気回路の被
覆構造。3. The coating structure for an electric circuit according to claim 1, wherein the surface of the insulator and / or the conductor material provided in the semiconductor substrate is coated with Ni or a Ni alloy. .
構造であり、前記導電体材料の表面に接触、堆積、積層
又は載架された材料はＮｉ−Ｂ合金であることを特徴と
する請求項１又は請求項２の電気回路の被覆構造。4. The conductive material has a two-layer structure of an Ag layer and a Cu layer, and the material contacted, deposited, laminated or placed on the surface of the conductive material is a Ni—B alloy. The covering structure for an electric circuit according to claim 1 or 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18179192A JPH066012A (en) | 1992-06-16 | 1992-06-16 | Coating structure for electric circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18179192A JPH066012A (en) | 1992-06-16 | 1992-06-16 | Coating structure for electric circuit |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002253961A Division JP3795438B2 (en) | 2002-08-30 | 2002-08-30 | Method for forming wiring of semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH066012A true JPH066012A (en) | 1994-01-14 |
Family
ID=16106938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18179192A Pending JPH066012A (en) | 1992-06-16 | 1992-06-16 | Coating structure for electric circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH066012A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000040742A (en) * | 1998-06-22 | 2000-02-08 | Stmicroelectronics Inc | Silver metalization by damask method |
| US6147408A (en) * | 1997-09-18 | 2000-11-14 | Ebara Corporation | Method of forming embedded copper interconnections and embedded copper interconnection structure |
| WO2001008213A1 (en) * | 1999-07-27 | 2001-02-01 | International Business Machines Corporation | REDUCED ELECTROMIGRATION AND STRESS INDUCED MIGRATION OF Cu WIRES BY SURFACE COATING |
| WO2002101822A3 (en) * | 2001-06-11 | 2003-05-30 | Ebara Corp | Interconnection in semiconductor device and method for manufacturing the same |
| JP2003179000A (en) * | 2001-12-12 | 2003-06-27 | Sony Corp | Semiconductor device and method of manufacturing the same |
| JP2005191408A (en) * | 2003-12-26 | 2005-07-14 | Matsushita Electric Ind Co Ltd | Coil conductor, method for manufacturing the same, and electronic component using the same |
| CN100416818C (en) * | 2001-09-12 | 2008-09-03 | 株式会社东芝 | Semiconductor device and method of fabricating the same |
-
1992
- 1992-06-16 JP JP18179192A patent/JPH066012A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6147408A (en) * | 1997-09-18 | 2000-11-14 | Ebara Corporation | Method of forming embedded copper interconnections and embedded copper interconnection structure |
| US6391775B1 (en) | 1997-09-18 | 2002-05-21 | Ebara Corporation | Method of forming embedded copper interconnections and embedded copper interconnection structure |
| US6787467B2 (en) | 1997-09-18 | 2004-09-07 | Ebara Corporation | Method of forming embedded copper interconnections and embedded copper interconnection structure |
| JP2000040742A (en) * | 1998-06-22 | 2000-02-08 | Stmicroelectronics Inc | Silver metalization by damask method |
| WO2001008213A1 (en) * | 1999-07-27 | 2001-02-01 | International Business Machines Corporation | REDUCED ELECTROMIGRATION AND STRESS INDUCED MIGRATION OF Cu WIRES BY SURFACE COATING |
| US6342733B1 (en) | 1999-07-27 | 2002-01-29 | International Business Machines Corporation | Reduced electromigration and stressed induced migration of Cu wires by surface coating |
| US7468320B2 (en) | 1999-07-27 | 2008-12-23 | International Business Machines Corporation | Reduced electromigration and stressed induced migration of copper wires by surface coating |
| WO2002101822A3 (en) * | 2001-06-11 | 2003-05-30 | Ebara Corp | Interconnection in semiconductor device and method for manufacturing the same |
| CN100416818C (en) * | 2001-09-12 | 2008-09-03 | 株式会社东芝 | Semiconductor device and method of fabricating the same |
| JP2003179000A (en) * | 2001-12-12 | 2003-06-27 | Sony Corp | Semiconductor device and method of manufacturing the same |
| JP2005191408A (en) * | 2003-12-26 | 2005-07-14 | Matsushita Electric Ind Co Ltd | Coil conductor, method for manufacturing the same, and electronic component using the same |
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