JPH05330983A - Device for liquid-phase epitaxial growth - Google Patents
Device for liquid-phase epitaxial growthInfo
- Publication number
- JPH05330983A JPH05330983A JP16348892A JP16348892A JPH05330983A JP H05330983 A JPH05330983 A JP H05330983A JP 16348892 A JP16348892 A JP 16348892A JP 16348892 A JP16348892 A JP 16348892A JP H05330983 A JPH05330983 A JP H05330983A
- Authority
- JP
- Japan
- Prior art keywords
- base substrate
- substrate
- solution
- baffle plate
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は下地基板の表面に単結晶
膜を育成する液相エピタキシャル成長装置に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid phase epitaxial growth apparatus for growing a single crystal film on the surface of a base substrate.
【０００２】[0002]
【従来の技術】従来、遅延線フィルター，発振器，非線
形デバイスなどの静磁波（ＭＳＷ）デバイス、およびフ
ァラデー回転効果を利用した光アイソレータ，サーキュ
レータまたはスイッチなどの磁気光学素子等に磁性ガー
ネット単結晶が広く用いられている。この磁性ガーネッ
ト単結晶の主な製造方法として、液相エピタキシャル成
長法（ＬＰＥ法）が知られている。2. Description of the Related Art Conventionally, magnetic garnet single crystals have been widely used in magnetostatic wave (MSW) devices such as delay line filters, oscillators and nonlinear devices, and magneto-optical elements such as optical isolators, circulators and switches utilizing the Faraday rotation effect. It is used. A liquid phase epitaxial growth method (LPE method) is known as a main method for producing the magnetic garnet single crystal.
【０００３】この液相エピタキシャル成長法は、縦型加
熱炉内に所定条件に保持された白金製坩堝に、ガーネッ
トを構成する元素の酸化物および溶剤としてＰｂＯとＢ
2 Ｏ3 とを充填し、約１２００℃で均質化を行い溶液化
する。この溶液を液相線（Liquidus) と固相線 (Solidu
s)の間の温度、即ち約９００℃前後の一定温度に保持し
てガーネットを過飽和状態にした後、この溶液中に下地
基板であるＧｄ3 Ｇａ5 Ｏ12（ＧＧＧ）基板を浸漬し、
一定位置で回転させながら所定時間成長を行うことによ
り、下地基板の表面に磁性ガーネット単結晶膜を育成す
る。最後に、溶液の上方で下地基板を約５００ｒｐｍの
回転数で回転させることによって、磁性ガーネット単結
晶膜上に付着している溶液を振り切るというものであ
る。上記下地基板は、支持棒の下端部に取り付けられた
基板保持具によって水平状態に保持されている。According to this liquid phase epitaxial growth method, a platinum crucible held in a vertical heating furnace under predetermined conditions contains an oxide of elements constituting garnet and PbO and B as a solvent.
Fill with 2 O 3 and homogenize at about 1200 ° C. to form a solution. This solution is applied to the liquidus (Liquidus) and solidus (Solidus)
s), that is, after maintaining the garnet in a supersaturated state by maintaining it at a constant temperature of about 900 ° C., immersing the Gd 3 Ga 5 O 12 (GGG) substrate as the base substrate in this solution,
A magnetic garnet single crystal film is grown on the surface of the base substrate by performing growth for a predetermined time while rotating at a fixed position. Finally, the underlying substrate is rotated above the solution at a rotation speed of about 500 rpm to shake off the solution adhering to the magnetic garnet single crystal film. The base substrate is held horizontally by a substrate holder attached to the lower end of the support rod.
【０００４】[0004]
【発明が解決しようとする課題】従来の場合、溶液が過
冷却状態に保持された後、下地基板を保持した保持具を
一定速度で徐々に降下させ、溶液中にこれを浸漬し、エ
ピタキシャル成長を開始する。基板保持具を降下させる
に当たって、下地基板は水平に保持されているため、溶
液中から蒸発するＰｂＯなどの蒸気に直接さらされるこ
とになる。このような状態においては、超清浄な雰囲気
において鏡面加工処理がなされている下地基板がＰｂＯ
蒸気にさらされ、ＰｂＯ等を主成分とする析出物が下地
基板上に析出し堆積する。このような下地基板を溶液中
に浸漬しエピタキシャル成長を行っても、そのＰｂＯを
主成分とする析出物が結晶学的欠陥の原因となり、良質
な単結晶膜が得られないという問題があった。In the conventional case, after the solution is kept in a supercooled state, the holder holding the base substrate is gradually lowered at a constant speed and immersed in the solution for epitaxial growth. Start. When lowering the substrate holder, since the underlying substrate is held horizontally, it is directly exposed to vapor such as PbO vaporized from the solution. In such a state, the base substrate, which has been subjected to the mirror surface processing in the ultra-clean atmosphere, is made of PbO.
When exposed to steam, a precipitate containing PbO or the like as a main component is deposited and deposited on the underlying substrate. Even when such an underlying substrate is dipped in a solution and epitaxially grown, the precipitate containing PbO as a main component causes crystallographic defects, and there is a problem that a good-quality single crystal film cannot be obtained.
【０００５】また、溶液より温度の低い下地基板をいき
なり溶液に浸漬すると、良質な単結晶膜が得られないと
いう経験的事実から、実際には下地基板は炉外から溶液
直上まで徐々に降下させた後、その位置において一定回
転速度で回転させ、下地基板を予熱し、溶液との温度差
をできるだけなくす工程が取り入れられている。その
際、数分から数十分の間、溶液直上で下地基板が回転さ
れながら保持されることになり、下地基板がＰｂＯ蒸気
にさらされる時間が長くなって、ＰｂＯ等を主成分とす
る析出物が下地基板に一層付着しやすくなる。そこで、
本発明の目的は、下地基板がＰｂＯ等の蒸気に直接さら
されることなく十分に予熱工程を行い、良質な単結晶膜
を得ることができる液相エピタキシャル成長装置を提供
することにある。Further, from the empirical fact that a good-quality single crystal film cannot be obtained by suddenly immersing a base substrate whose temperature is lower than that of the solution, the base substrate is actually gradually lowered from outside the furnace to directly above the solution. After that, the step of rotating at a constant rotation speed at that position to preheat the underlying substrate to eliminate the temperature difference from the solution as much as possible is introduced. At that time, the base substrate is held for a few minutes to several tens of minutes while being rotated immediately above the solution, and the base substrate is exposed to PbO vapor for a long time, resulting in a precipitate containing PbO or the like as a main component. Are more likely to adhere to the base substrate. Therefore,
It is an object of the present invention to provide a liquid phase epitaxial growth apparatus capable of sufficiently performing a preheating step without directly exposing a base substrate to vapor such as PbO to obtain a good quality single crystal film.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するた
め、本発明は、基板保持具には、下地基板の下方に間隔
をあけて邪魔板が保持されていることを特徴とする。To achieve the above object, the present invention is characterized in that a baffle plate is held by a substrate holder below a base substrate with a space therebetween.
【０００７】[0007]
【作用】下地基板をを炉内に降下させ、溶液直上で予熱
する際、溶液から立ちのぼるＰｂＯ蒸気によって下地基
板が汚染される恐れがあるが、下地基板の下方には邪魔
板が配置されているので、殆どのＰｂＯ蒸気は邪魔板に
当たり、下地基板の汚染を低減できる。また、下地基板
は溶液の直上まで降下させることができるので、溶液か
らの輻射熱により下地基板を十分に予熱することができ
る。When the base substrate is lowered into the furnace and preheated immediately above the solution, the base substrate may be contaminated by PbO vapor rising from the solution, but a baffle plate is arranged below the base substrate. Therefore, most of the PbO vapor hits the baffle plate and can reduce the contamination of the base substrate. Moreover, since the base substrate can be lowered to just above the solution, the base substrate can be sufficiently preheated by the radiant heat from the solution.
【０００８】なお、溶液から立ちのぼるＰｂＯ蒸気を阻
止するため、邪魔板は少なくとも下地基板の下方に配置
されておればよいが、下地基板の上面にＰｂＯ蒸気やＰ
ｂＯの滴が付着するのを防止するため、必要に応じて下
地基板の上方にも邪魔板を配置してもよい。また、邪魔
板の大きさは、立ちのぼる蒸気を効果的に阻止するた
め、下地基板と同等またはこれより大きくするのが望ま
しい。さらに、邪魔板は下地基板と共に溶液中に浸漬さ
れるので、溶液を汚染しないように耐熱性貴金属を用い
るのが望ましい。In order to prevent the PbO vapor rising from the solution, the baffle plate may be arranged at least below the base substrate, but PbO vapor or Pb may be provided on the upper surface of the base substrate.
If necessary, a baffle plate may be arranged above the base substrate to prevent the bO droplets from adhering. Further, the size of the baffle plate is preferably equal to or larger than that of the base substrate in order to effectively prevent rising steam. Furthermore, since the baffle plate is immersed in the solution together with the base substrate, it is desirable to use a heat-resistant noble metal so as not to contaminate the solution.
【０００９】[0009]
【実施例】図１は本発明の一例である磁性ガーネット膜
の育成装置を示す。アルミナ製の縦型円筒形炉心管１の
内側には、支持台２によって底面が支持された白金製坩
堝３が配置され、この坩堝３内には磁性ガーネット膜の
原料と溶剤とが充填されている。炉心管１の外側には
上，中，下の３段の抵抗加熱ヒータ４，５，６が設けら
れており、坩堝３は中ヒータ５の内側に配置されてい
る。炉心管１内の坩堝３は上記ヒータ４〜６の輻射熱に
より加熱され、ガーネット原料および溶剤が溶解されて
溶液７化されるとともに、炉心管１内の雰囲気が所定温
度に保持されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows an apparatus for growing a magnetic garnet film which is an example of the present invention. Inside a vertical cylindrical core tube 1 made of alumina, a platinum crucible 3 whose bottom surface is supported by a support 2 is arranged, and the crucible 3 is filled with a raw material for a magnetic garnet film and a solvent. There is. Upper, middle, and lower resistance heating heaters 4, 5, and 6 are provided on the outer side of the core tube 1, and the crucible 3 is disposed on the inner side of the middle heater 5. The crucible 3 in the core tube 1 is heated by the radiant heat of the heaters 4 to 6, the garnet raw material and the solvent are dissolved to form a solution 7, and the atmosphere in the core tube 1 is maintained at a predetermined temperature.
【００１０】複数枚のＧＧＧ基板よりなる円板状下地基
板８および邪魔板９，１０は、図２に示す白金製または
白金合金製の基板保持具１１によって互いに間隔を開け
て水平に保持されている。邪魔板９，１０は下地基板８
と同一径の白金製または白金合金製円板で構成されてい
る。基板保持具１１は、アルミナ製支持棒２０の下端部
に固定されたボス部１２と、ボス部１２と放射状の連結
部１３を介して連結された略三角形の枠部１４と、枠部
１４の各頂部に連結され、下方へ延びる３本の脚部１５
〜１７とを備えている。このうち、２本の脚部１５，１
６は枠部１４に着脱不能に固定されており、残りの１本
の脚部１７は白金製または白金合金製の止めネジ１８に
よって枠部１４に対して着脱可能である。脚部１５〜１
７は棒状に形成されて外部から応力を加えても容易に曲
がらない太さ、つまり実質的に非可撓性構造となってい
る。各脚部１５〜１７の内側には下地基板８および邪魔
板９，１０の外周縁部が係合する３個の溝１５ａ〜１７
ａが形成されており、各脚部の溝１５ａ〜１７ａは互い
に同一高さに設けられている。これら溝１５ａ〜１７ａ
に下地基板８および邪魔板９，１０の外周縁部を係合さ
せた時、各板は互いに平行にかつ水平に保持される。The disk-shaped base substrate 8 and the baffles 9 and 10 composed of a plurality of GGG substrates are horizontally held at a distance from each other by a substrate holder 11 made of platinum or platinum alloy shown in FIG. There is. Baffles 9 and 10 are base substrates 8
It is composed of a platinum or platinum alloy disc having the same diameter as the. The substrate holder 11 includes a boss portion 12 fixed to a lower end portion of an alumina support rod 20, a substantially triangular frame portion 14 connected to the boss portion 12 via a radial connecting portion 13, and a frame portion 14. Three legs 15 connected to each top and extending downward
~ 17 and. Of these, the two legs 15,1
6 is fixed to the frame portion 14 in a non-detachable manner, and the remaining one leg portion 17 is attachable / detachable to / from the frame portion 14 by a set screw 18 made of platinum or platinum alloy. Legs 15-1
7 is formed in a rod shape and has a thickness that does not easily bend even when external stress is applied, that is, a substantially inflexible structure. Inside each of the legs 15 to 17, three grooves 15a to 17 with which the outer peripheral edge portions of the base substrate 8 and the baffles 9 and 10 are engaged.
a is formed, and the grooves 15a to 17a of each leg are provided at the same height. These grooves 15a to 17a
When the base substrate 8 and the outer peripheral edges of the baffles 9 and 10 are engaged with each other, the plates are held parallel to each other and horizontally.
【００１１】上記基板保持具１１に下地基板８および邪
魔板９，１０を保持する場合には、まず着脱可能な脚部
１７を基板保持具１１から外し、残りの２本の脚部１
５，１６の溝１５ａ，１６ａに下地基板８および邪魔板
９，１０の周縁部を係合させる。このとき、最下方の溝
には邪魔板１０を、中央の溝には下地基板８を、最上方
の溝には邪魔板９をそれぞれ係合させる。次に、下地基
板８および邪魔板９，１０の周縁部に溝１７ａが係合す
るように脚部１７を基板保持具１１に止めネジ１８で締
め付けて取り付ける。脚部１５〜１７の溝１５ａ〜１７
ａは、下地基板８に横方向の応力が掛からないように、
下地基板８の外周縁部との間に僅かに余裕を持たせて設
計されている。また、下地基板８を保持した状態で、例
えば基板保持具１１を１００ｒｐｍで３０秒おきに正逆
に回転させても、下地基板８に回転方向のずれが起こら
ないように設定されている。When holding the base substrate 8 and the baffles 9 and 10 on the substrate holder 11, first, the detachable leg portion 17 is removed from the substrate holder 11 and the remaining two leg portions 1 are provided.
The peripheral portions of the base substrate 8 and the baffles 9 and 10 are engaged with the grooves 15a and 16a of the grooves 5 and 16, respectively. At this time, the baffle plate 10 is engaged with the lowermost groove, the base substrate 8 is engaged with the central groove, and the baffle plate 9 is engaged with the uppermost groove. Next, the legs 17 are attached to the substrate holder 11 by tightening the set screws 18 so that the grooves 17a are engaged with the peripheral portions of the base substrate 8 and the baffles 9 and 10. Grooves 15a-17 of legs 15-17
a is to prevent lateral stress from being applied to the base substrate 8,
It is designed with a slight allowance between it and the outer peripheral edge of the base substrate 8. Further, even if the substrate holder 11 is rotated at 100 rpm for 30 seconds in the forward and reverse directions while the underlying substrate 8 is held, the underlying substrate 8 is set so as not to shift in the rotation direction.
【００１２】上記支持棒２０の上端部は駆動手段（図示
せず）に着脱可能に取り付けられており、回転方向およ
び上下方向に駆動される。炉心管１の上端には、炉内へ
の冷気の侵入を抑制する石英ガラス製のシャッタ２１が
載置されており、このシャッタ２１の中心部に上記支持
棒２０が挿通されている。An upper end portion of the support rod 20 is detachably attached to a driving means (not shown) and is driven in a rotating direction and a vertical direction. At the upper end of the furnace core tube 1, a shutter 21 made of quartz glass for suppressing invasion of cold air into the furnace is placed, and the support rod 20 is inserted at the center of the shutter 21.
【００１３】次に、上記構成の液相エピタキシャル成長
装置の動作の一例を説明する。まず、坩堝３の中でガー
ネット原料と溶剤とを混合し、１２００℃で加熱溶解し
て２時間保持した後、８９０℃に降温して過冷却状態と
する。一方、下地基板８および邪魔板９，１０を保持し
た基板保持具１１を降下させ、溶液７の表面直上にて数
分間保持し、下地基板８の温度が溶液温度とほぼ同一の
温度になるよう予熱する。この下地基板８の降下時と予
熱時において、邪魔板９，１０は溶液７から蒸発するＰ
ｂＯ蒸気が下地基板８に直接付着するのを防ぐ。一定時
間、下地基板８を予熱した後、さらに支持棒２０を降下
させて下地基板８を溶液７中に浸漬する。そして、支持
棒２０を一方向あるいは正逆に回転させて磁性ガーネッ
ト単結晶膜を数時間等温育成する。このとき、少なくと
も下方の邪魔板１０は溶液７中に浸漬されるが、邪魔板
１０は耐熱性貴金属よりなるので、溶液７が汚染される
恐れはない。Next, an example of the operation of the liquid phase epitaxial growth apparatus having the above structure will be described. First, a garnet raw material and a solvent are mixed in a crucible 3, heated and melted at 1200 ° C. and held for 2 hours, and then cooled to 890 ° C. to be in a supercooled state. On the other hand, the substrate holder 11 holding the base substrate 8 and the baffles 9 and 10 is lowered and held for a few minutes right above the surface of the solution 7 so that the temperature of the base substrate 8 becomes almost the same as the solution temperature. Preheat. The baffles 9 and 10 evaporate from the solution 7 when the base substrate 8 is lowered and preheated.
The bO vapor is prevented from directly adhering to the base substrate 8. After preheating the base substrate 8 for a certain period of time, the supporting rod 20 is further lowered to immerse the base substrate 8 in the solution 7. Then, the support bar 20 is rotated in one direction or in the reverse direction to grow the magnetic garnet single crystal film isothermally for several hours. At this time, at least the lower baffle plate 10 is immersed in the solution 7, but since the baffle plate 10 is made of a heat-resistant noble metal, the solution 7 is not contaminated.
【００１４】単結晶膜の育成が終了した後、下地基板８
を溶液７から高速度で回転させながら引き上げ、単結晶
膜上の付着溶液を遠心力により振り切る。その後、下地
基板８に熱的応力がかからないよう徐冷するが、この冷
却過程においても邪魔板９，１０が単結晶膜表面にＰｂ
Ｏが付着するのを防止するので、良質な単結晶膜を得る
ことができる。なお、高速回転時に脚部１５〜１７の下
端部には外方への遠心力が作用するが、脚部１５〜１７
は剛性を備えているので、外方へ撓むことがなく、溝１
５ａ〜１７ａから下地基板８や邪魔板９，１０が外れる
恐れはない。After the growth of the single crystal film is completed, the underlying substrate 8
Is pulled up from the solution 7 while rotating at a high speed, and the attached solution on the single crystal film is shaken off by the centrifugal force. After that, the base substrate 8 is gradually cooled so that thermal stress is not applied, but in this cooling process, the baffles 9 and 10 are not covered with Pb on the surface of the single crystal film.
Since O is prevented from adhering, a good quality single crystal film can be obtained. It should be noted that the centrifugal force outward acts on the lower ends of the legs 15 to 17 during high-speed rotation.
Since it has rigidity, it does not bend outwards and the groove 1
There is no danger that the base substrate 8 and the baffles 9 and 10 will come off from 5a to 17a.
【００１５】なお、上記実施例では磁性ガーネット単結
晶について説明したが、本発明はこれのみに限定される
ものではなく、例えば光学デバイス用単結晶であるニオ
ブ酸リチウムの液相エピタキシャル成長にも本発明を適
用することができる。また、下地基板および邪魔板の保
持構造は実施例のものに限定されず、例えば従来と同様
に内外方向に弾性を有する脚を備えた基板保持具で下地
基板や邪魔板を保持してもよい。Although the magnetic garnet single crystal has been described in the above embodiments, the present invention is not limited to this. For example, the present invention is also applicable to liquid phase epitaxial growth of lithium niobate, which is a single crystal for optical devices. Can be applied. The structure for holding the base substrate and the baffle plate is not limited to that of the embodiment, and for example, the base substrate and the baffle plate may be held by a substrate holder having legs having elasticity inward and outward as in the conventional case. ..
【００１６】[0016]
【発明の効果】以上の説明で明らかなように、本発明に
よれば、下地基板の下方に邪魔板が位置するように基板
保持具に保持したので、下地基板を炉内へ降下させる
時、予熱時および育成後の下地基板の徐冷時に、溶液か
ら蒸発する溶剤の蒸気による下地基板の汚染を防止ある
いは低減できる。そのため、良質の単結晶膜を再現性よ
く製造できる。As is apparent from the above description, according to the present invention, since the baffle plate is held by the substrate holder below the underlying substrate, when the underlying substrate is lowered into the furnace, It is possible to prevent or reduce the contamination of the base substrate by the vapor of the solvent that evaporates from the solution during the preheating and the slow cooling of the base substrate after the growth. Therefore, a high quality single crystal film can be manufactured with good reproducibility.
【図１】本発明にかかる液相エピタキシャル成長装置の
浸漬前の縦断面図である。FIG. 1 is a vertical sectional view of a liquid phase epitaxial growth apparatus according to the present invention before immersion.
【図２】基板保持具に下地基板および邪魔板を保持した
状態を示す分解斜視図である。FIG. 2 is an exploded perspective view showing a state in which a base substrate and a baffle plate are held by a substrate holder.
１ 炉心管 ３ 坩堝 ８ 下地基板 ９，１０ 邪魔板 １１ 基板保持具 ２０ 支持棒 1 core tube 3 crucible 8 base substrate 9, 10 baffle plate 11 substrate holder 20 support rod
───────────────────────────────────────────────────── フロントページの続き (72)発明者 青田 充弘 京都府長岡京市天神２丁目26番10号 株式 会社村田製作所内 (72)発明者 関島 雄徳 京都府長岡京市天神２丁目26番10号 株式 会社村田製作所内 (72)発明者 鷹木 洋 京都府長岡京市天神２丁目26番10号 株式 会社村田製作所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Mitsuhiro Aoda 2 26-10 Tenjin, Nagaokakyo, Kyoto Prefecture Murata Manufacturing Co., Ltd. (72) Inventor Yutoku Sekijima 2 26-10 Tenjin, Nagaokakyo, Kyoto Stock Murata Manufacturing Co., Ltd. (72) Inventor Hiroshi Takagi 2 26-10 Tenjin Tenjin, Nagaokakyo City, Kyoto Stock Company Murata Manufacturing Co., Ltd.
Claims (1)
この基板保持具に保持された下地基板を単結晶原料が溶
解されている坩堝内に浸漬し、一定位置で回転させなが
ら所定時間成長を行うことにより、下地基板の表面に単
結晶膜を育成する液相エピタキシャル成長装置におい
て、 上記基板保持具には、下地基板の下方に間隔をあけて邪
魔板が保持されていることを特徴とする液相エピタキシ
ャル成長装置。1. A substrate holder is attached to a lower end portion of a support rod,
The base substrate held by this substrate holder is immersed in the crucible in which the single crystal raw material is dissolved, and the single crystal film is grown on the surface of the base substrate by growing for a predetermined time while rotating at a fixed position. In the liquid phase epitaxial growth apparatus, a baffle plate is held below the underlying substrate at a distance from the base substrate by a baffle plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16348892A JPH05330983A (en) | 1992-05-29 | 1992-05-29 | Device for liquid-phase epitaxial growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16348892A JPH05330983A (en) | 1992-05-29 | 1992-05-29 | Device for liquid-phase epitaxial growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05330983A true JPH05330983A (en) | 1993-12-14 |
Family
ID=15774820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16348892A Pending JPH05330983A (en) | 1992-05-29 | 1992-05-29 | Device for liquid-phase epitaxial growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05330983A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU690286B2 (en) * | 1994-07-27 | 1998-04-23 | Shinroku Nishiyama | Method of incinerating and melting wastes and apparatus therefor |
| US6872248B2 (en) | 2002-03-29 | 2005-03-29 | Canon Kabushiki Kaisha | Liquid-phase growth process and liquid-phase growth apparatus |
-
1992
- 1992-05-29 JP JP16348892A patent/JPH05330983A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU690286B2 (en) * | 1994-07-27 | 1998-04-23 | Shinroku Nishiyama | Method of incinerating and melting wastes and apparatus therefor |
| US6872248B2 (en) | 2002-03-29 | 2005-03-29 | Canon Kabushiki Kaisha | Liquid-phase growth process and liquid-phase growth apparatus |
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