JPH064301Y2 - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- JPH064301Y2 JPH064301Y2 JP1987122671U JP12267187U JPH064301Y2 JP H064301 Y2 JPH064301 Y2 JP H064301Y2 JP 1987122671 U JP1987122671 U JP 1987122671U JP 12267187 U JP12267187 U JP 12267187U JP H064301 Y2 JPH064301 Y2 JP H064301Y2
- Authority
- JP
- Japan
- Prior art keywords
- sensor chip
- semiconductor substrate
- semiconductor
- thermal expansion
- glass layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
【考案の詳細な説明】 〈産業上の利用分野〉 本考案は、半導体圧力センサに関するものである。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a semiconductor pressure sensor.
〈従来の技術〉 第２図は従来より一般に使用されている従来例の構成説
明図である。<Prior Art> FIG. 2 is an explanatory view of a configuration of a conventional example which is generally used in the past.
図において、１は半導体からなるセンサチップ、１１は
センサチップ１にダイアフラム１２を形成する凹部、１
３はダイアフラム１２に設けられた半導体ピエゾ抵抗ゲ
ージ。２はセンサチップ１に一面側が接合され凹部１１
と基準室１４を構成するガラスよりなる基板。３は半導
体基板２の他面側に取付けられ金属よりなる筒状の支持
部。４は支持部３の他端が取付けられる金属よりなるハ
ウジングである。In the figure, 1 is a sensor chip made of a semiconductor, 11 is a recess for forming a diaphragm 12 on the sensor chip 1, and 1 is a recess.
Reference numeral 3 is a semiconductor piezoresistive gauge provided on the diaphragm 12. The concave portion 11 is formed by bonding one side to the sensor chip 1
And a substrate made of glass that constitutes the reference chamber 14. Reference numeral 3 denotes a cylindrical support portion which is attached to the other surface of the semiconductor substrate 2 and is made of metal. Reference numeral 4 denotes a metal housing to which the other end of the support portion 3 is attached.
以上の構成において、基準室１３に基準圧Ｐｓが導入さ
れ、ダイアフラム１２の外表面には測定圧Ｐｍが加えら
れる。測定圧Ｐｍに対応した抵抗変化が半導体ピエゾ抵
抗ゲージ１３より得られることにより、測定圧Ｐｍを測
定することができる。In the above structure, the reference pressure Ps is introduced into the reference chamber 13, and the measurement pressure Pm is applied to the outer surface of the diaphragm 12. Since the resistance change corresponding to the measurement pressure Pm is obtained from the semiconductor piezo resistance gauge 13, the measurement pressure Pm can be measured.
〈考案が解決しようとする問題点〉 このようなものにおいては、ガラスの基板２は、支持部
３との陽極接合されている。ガラスの基板２は一般的に
半導体ピエゾ抵抗ゲージ１３と熱膨張係数の近いパイレ
ックスガラスが用いられるが、ガラスの基板の厚さがセ
ンサチップの厚さと同等以上あるために、両者の熱膨脹
係数の差から生じる熱応力がダイアフラム１２に影響を
与え、陽極接合後のゼロ・オフセットの発生や、温度変
化によるダアフラム１２への外乱の要因となる。<Problems to be Solved by the Invention> In such a case, the glass substrate 2 is anodically bonded to the supporting portion 3. The glass substrate 2 is generally made of Pyrex glass, which has a thermal expansion coefficient close to that of the semiconductor piezoresistive gauge 13, but since the glass substrate has a thickness equal to or larger than the sensor chip thickness, the difference in thermal expansion coefficient between the two is large. The thermal stress caused by the influence on the diaphragm 12 causes a zero offset after the anodic bonding and causes a disturbance to the daa diaphragm 12 due to a temperature change.
本考案は、この問題点を、解決するものである。The present invention solves this problem.
本考案の目的は、温度特性が良好で、接合部の信頼性が
高い、半導体圧力センサを提供するにある。An object of the present invention is to provide a semiconductor pressure sensor having good temperature characteristics and high reliability of the joint.
〈問題を解決するための手段〉 この目的を達成するために、本考案は、半導体からなる
センサチップと、該センサチップにダイアフラムを形成
する凹部と、前記ダイアフラムに設けられた半導体ピエ
ゾ抵抗ゲージと、前記センサチップに一面側が第１接合
ガラス層を介して該センサチップと同一の材料からなり
同一の面方位で同一の結晶方向で接合され前記凹部と基
準室を構成する半導体基板と、前記半導体基板の他面側
に第２接合ガラス層を介して取り付けられ金属よりなる
筒状の支持部と、該支持部の他端が取り付けられる金属
よりなるハウジングとを具備し、前記センサチップ及び
前記半導体基板と前記支持部との熱膨張係数が極めて近
くなるような支持部材を選択し、前記センサチップ及び
前記半導体基板と前記第１、第２接合ガラス層との熱膨
張係数が極めて近くなるようなガラス材を選択してなる
半導体圧力センサを構成したものである。<Means for Solving the Problem> In order to achieve this object, the present invention provides a sensor chip made of a semiconductor, a recess for forming a diaphragm on the sensor chip, and a semiconductor piezoresistive gauge provided on the diaphragm. A semiconductor substrate, one surface of which is made of the same material as the sensor chip through the first bonding glass layer, is bonded to the sensor chip in the same crystal orientation in the same plane orientation to form the recess and the reference chamber; The sensor chip and the semiconductor, comprising: a cylindrical supporting portion made of metal and attached to the other surface side of the substrate through the second bonding glass layer; and a housing made of metal to which the other end of the supporting portion is attached. A supporting member is selected so that the thermal expansion coefficient of the substrate and the supporting portion are extremely close to each other, and the sensor chip and the semiconductor substrate are connected to the first and second bonding glass. The semiconductor pressure sensor is configured by selecting a glass material having a coefficient of thermal expansion extremely close to that of the glass layer.
〈作用〉 以上の構成において、基準室に基準圧が導入され、ダイ
アフラムの外表面には測定圧が加えられる。測定圧に対
応した抵抗変化が半導体ピエゾ抵抗ゲージより得られる
ことにより、測定圧を測定することができる。<Operation> In the above configuration, the reference pressure is introduced into the reference chamber, and the measurement pressure is applied to the outer surface of the diaphragm. The measurement pressure can be measured by obtaining the resistance change corresponding to the measurement pressure from the semiconductor piezoresistive gauge.
以下、実施例に基ずき詳細に説明する。Hereinafter, detailed description will be given based on Examples.
〈実施例〉 第１図は本考案の一実施例の要部構成説明図である。<Embodiment> FIG. 1 is an explanatory view of a main part configuration of an embodiment of the present invention.
図において、第２図と同一記号は同一機能を表わす。In the figure, the same symbols as in FIG. 2 represent the same functions.
以下、第２図と相違部分のみ説明する。Only parts different from FIG. 2 will be described below.
２ａはセンサチップ１に一面側が第１接合ガラス層２１
を介して該センサチップ１と同一の材料からなり同一の
面方位で同一の結晶方向で接合され凹部１１と基準室１
３を構成する半導体基板である。３は半導体基板の他面
側に第２接合ガラス層３１を介して取付けられ金属より
なる筒状の支持部である。2a has a first bonding glass layer 21 on one surface side of the sensor chip 1.
Via the same material as that of the sensor chip 1 and bonded in the same crystal orientation with the same plane orientation and the recess 11 and the reference chamber 1.
3 is a semiconductor substrate forming part 3. Reference numeral 3 denotes a cylindrical supporting portion made of metal and attached to the other surface side of the semiconductor substrate via the second bonding glass layer 31.
而して、センサチップ１及び半導体基板２ａと、支持部
３との熱膨脹係数が極めて近くなるような支持部材が選
択されている。この場合は、センサチップ１及び半導体
基板２ａは、シリコン（熱膨脹係数3.5×１０-6）、支
持部３は鉄−ニッケル合金（熱膨脹係数3.8×3.9×１０
-6）が使用されている。Therefore, a supporting member is selected so that the thermal expansion coefficient of the sensor chip 1 and the semiconductor substrate 2a and the supporting portion 3 are very close to each other. In this case, the sensor chip 1 and the semiconductor substrate 2a are made of silicon (coefficient of thermal expansion 3.5 × 10 −6 ) and the support 3 is made of an iron-nickel alloy (coefficient of thermal expansion 3.8 × 3.9 × 10 6 ).
-6 ) is used.
センサチップ１及び半導体基板２ａと、第１、第２接合
ガラス層２１，３１との熱膨脹係数が極めて近くなるよ
うなガラス材が選択されている。この場合、第１、第２
接合ガラス層２１，３１はパイレックスガラス（熱膨脹
係数3.25×１０-6）が使用されている。A glass material is selected so that the thermal expansion coefficients of the sensor chip 1 and the semiconductor substrate 2a and the first and second bonding glass layers 21 and 31 are extremely close to each other. In this case, the first and second
The bonding glass layers 21 and 31 are made of Pyrex glass (coefficient of thermal expansion: 3.25 × 10 −6 ).
以上の構成において、基準室１３に基準圧Ｐｓが導入さ
れ、ダイアフラム１２の外表面には測定圧Ｐｍが加えら
れる。測定圧Ｐｍに対応した抵抗変化が半導体ピエゾ抵
抗ゲージ１３より得られることにより、測定圧Ｐｍを測
定することができる。In the above structure, the reference pressure Ps is introduced into the reference chamber 13, and the measurement pressure Pm is applied to the outer surface of the diaphragm 12. Since the resistance change corresponding to the measurement pressure Pm is obtained from the semiconductor piezo resistance gauge 13, the measurement pressure Pm can be measured.
而して、 （１）センサチップ１と半導体基板２ａとが、同じ材質
（半導体）であり。両者の面方位、結晶方向が等しくな
るように接合されているので、温度が変化しても、セン
サチップ１は半導体基板２ａからの影響は受けずセンサ
チップ１は半導体基板２ａからの影響は受けず、、従っ
て、半導体基板２ａからの温度の外乱は零である。Thus, (1) the sensor chip 1 and the semiconductor substrate 2a are made of the same material (semiconductor). Since the two are bonded so that their plane orientations and crystal directions are the same, the sensor chip 1 is not affected by the semiconductor substrate 2a even if the temperature changes, and the sensor chip 1 is not affected by the semiconductor substrate 2a. Therefore, the temperature disturbance from the semiconductor substrate 2a is zero.
（２）支持部３の熱膨脹係数がセンサチップ１及び半導
体基板２ａの熱膨脹係数と近いので、温度が変化して
も、センサチップ１は、金属支持部３からの影響は小さ
く、金属支持部３からの温度の外乱は極めて小さい。(2) Since the thermal expansion coefficient of the supporting portion 3 is close to the thermal expansion coefficients of the sensor chip 1 and the semiconductor substrate 2a, the sensor chip 1 is less affected by the metal supporting portion 3 even if the temperature changes, and the metal supporting portion 3 The temperature disturbance from is extremely small.
以上から、本考案によれば、温度の外乱の影響の小さ
い、即ち、温度特性がより改善された半導体圧力センサ
を実現できる。As described above, according to the present invention, it is possible to realize a semiconductor pressure sensor that is less affected by temperature disturbance, that is, has improved temperature characteristics.
（３）センサチップ１と半導体基板２ａとは同じ半導体
材料であり、これらと支持部３の熱膨脹係数は極めて近
く選択されている。また、センサチップ１と半導体基板
２ａを接合している第一接合ガラス層２１と、半導体基
板２ａと支持部３とを接合している第２接合ガラス層３
１との各ガラス層の熱膨脹係数が、センサチップ１の熱
膨脹係数と極めて近く選択されている。したがって、接
合によって接合部（ガラス層）に生じる熱応力が極めて
小さく、接合強度が高く、接合部の信頼性が高い。(3) The sensor chip 1 and the semiconductor substrate 2a are made of the same semiconductor material, and the thermal expansion coefficients of these and the support portion 3 are selected to be extremely close to each other. Further, the first bonding glass layer 21 that bonds the sensor chip 1 and the semiconductor substrate 2a, and the second bonding glass layer 3 that bonds the semiconductor substrate 2a and the support portion 3 to each other.
The coefficient of thermal expansion of each glass layer 1 and 1 is selected to be very close to the coefficient of thermal expansion of the sensor chip 1. Therefore, the thermal stress generated in the joint portion (glass layer) by the joint is extremely small, the joint strength is high, and the joint reliability is high.
（４）センサチップ１と半導体基板２ａの接合、半導体
基板２ａと支持部３の接合を、一度の陽極接合で行なう
と、一回の温度上昇だけで、センサチップ１、半導体基
板２ａ、支持部３の三者を接合でき、製造工程が簡単と
なる。従って、安価な半導体圧力センサが得られる。(4) When the sensor chip 1 and the semiconductor substrate 2a are joined and the semiconductor substrate 2a and the support portion 3 are joined by a single anodic bonding, the sensor chip 1, the semiconductor substrate 2a, and the support portion can be heated only once. The three parts of No. 3 can be joined, and the manufacturing process becomes simple. Therefore, an inexpensive semiconductor pressure sensor can be obtained.
従って、温度特性が改善され、接合部の信頼性が向上
し、低価格の半導体圧力センサが得られる。Therefore, the temperature characteristics are improved, the reliability of the joint is improved, and a low-cost semiconductor pressure sensor can be obtained.
尚、センサチップ１として、圧力センサ以外に、歪みを
検出するセンサや、加速度、力等を検出するセンサでも
良い。In addition to the pressure sensor, the sensor chip 1 may be a sensor that detects strain or a sensor that detects acceleration, force, or the like.
〈考案の効果〉 以上説明したように、本考案は、半導体からなるセンサ
チップと、該センサチップにダイアフラムを形成する凹
部と、前記ダイアフラムに設けられた半導体ピエゾ抵抗
ゲージと、前記センサチップに一面側が第１接合ガラス
層を介して該センサチップと同一の材料からなり同一の
面方位で同一の結晶方向で接合され前記凹部と基準室を
構成する半導体基板と、前記半導体基板の他面側に第２
接合ガラス層を介して取り付けられ金属よりなる筒状の
支持部と、該支持部の他端が取り付けられる金属よりな
るハウジングとを具備し、前記センサチップ及び前記半
導体基板と前記支持部との熱膨張係数が極めて近くなる
ような支持部材を選択し、前記センサチップ及び前記半
導体基板と前記第１、第２接合ガラス層との熱膨張係数
が極めて近くなるようなガラス材を選択してなる半導体
圧力センサを構成した。<Effects of the Invention> As described above, the present invention provides a sensor chip made of a semiconductor, a recess for forming a diaphragm on the sensor chip, a semiconductor piezoresistive gauge provided on the diaphragm, and a surface on the sensor chip. A semiconductor substrate whose side is bonded through the first bonding glass layer with the same material as that of the sensor chip in the same crystal orientation in the same plane orientation to form the recess and the reference chamber, and to the other surface side of the semiconductor substrate. Second
A cylindrical support part made of metal and attached via a bonding glass layer, and a housing made of metal to which the other end of the support part is attached, and the heat of the sensor chip and the semiconductor substrate and the support part. A semiconductor formed by selecting a supporting member having a coefficient of expansion extremely close to each other and selecting a glass material having a coefficient of thermal expansion close to that of the sensor chip and the semiconductor substrate and the first and second bonding glass layers. A pressure sensor was constructed.
この結果、（１）センサチップと半導体基板とが、同じ
材質（半導体）であり、両者の面方位、結晶方向が等し
くなるように接合されているので、温度が変化しても、
センサチップは半導体基板からの影響は受けず、従っ
て、半導体基板からの温度の外乱は零である。（２）支
持部の熱膨脹係数がセンサチップ及び半導体基板の熱膨
脹係数と近いので、温度が変化しても、センサチップ
は、金属支持部からの影響は小さく、金属支持部からの
温度の外乱は極めて小さい。As a result, (1) since the sensor chip and the semiconductor substrate are made of the same material (semiconductor) and are bonded so that the plane orientations and crystal directions of both are equal, even if the temperature changes,
The sensor chip is unaffected by the semiconductor substrate and therefore the temperature disturbance from the semiconductor substrate is zero. (2) Since the coefficient of thermal expansion of the supporting portion is close to the coefficient of thermal expansion of the sensor chip and the semiconductor substrate, even if the temperature changes, the sensor chip is less affected by the metal supporting portion, and the temperature disturbance from the metal supporting portion causes no disturbance. Extremely small.
以上から、本考案によれば、温度の外乱の影響の小さ
い、即ち、温度特性がより改善された半導体圧力センサ
を実現できる。As described above, according to the present invention, it is possible to realize a semiconductor pressure sensor that is less affected by temperature disturbance, that is, has improved temperature characteristics.
（３）センサチップと半導体基板とは同じ半導体材料で
あり、これらと支持部の熱膨脹係数は極めて近く選択さ
れている。また、センサチップと半導体基板を接合して
いる第一接合ガラス層と、半導体基板と支持部とを接合
している第２接合ガラス層との各ガラス層の熱膨脹係数
がセンサチップの熱膨脹係数と極めて近く選択されてい
る。従って、接合によって接合部（ガラス層）に生じる
熱応力が極めて小さく、接合強度が高く、接合部の信頼
性が高い。（４）センサチップと半導体基板の接合、半
導体基板と支持部の接合を、一度の陽極接合で行なう
と、一回の温度上昇だけで、センサチップ、半導体基
板、支持部の三者を接合でき、製造工程が簡単となる。
従って、安価な半導体圧力センサが得られる。(3) The sensor chip and the semiconductor substrate are made of the same semiconductor material, and the thermal expansion coefficients of these and the supporting portion are selected to be very close to each other. Further, the coefficient of thermal expansion of each glass layer of the first bonding glass layer that bonds the sensor chip and the semiconductor substrate and the second bonding glass layer that bonds the semiconductor substrate and the supporting portion is the thermal expansion coefficient of the sensor chip. Very close selection. Therefore, the thermal stress generated in the bonded portion (glass layer) by the bonding is extremely small, the bonding strength is high, and the reliability of the bonded portion is high. (4) If the sensor chip and the semiconductor substrate are joined and the semiconductor substrate and the support portion are joined by a single anodic joining, the sensor chip, the semiconductor substrate and the support portion can be joined together by a single temperature rise. The manufacturing process is simplified.
Therefore, an inexpensive semiconductor pressure sensor can be obtained.
従って、本考案によれば、温度特性が改善され、接合部
の信頼性が向上し、低価格の半導体圧力センサを実現す
ることができるTherefore, according to the present invention, the temperature characteristics are improved, the reliability of the joint is improved, and a low-priced semiconductor pressure sensor can be realized.
第１図は本考案の一実施例の要部構成説明図、第２図は
従来より一般に使用されている従来例の構成説明図であ
る。 １……センサチップ、１１……凹部、１２……ダイアフ
ラム、１３……半導体ピエゾ抵抗ゲージ、１４……基準
室、２ａ……半導体基板、２１……第一接合ガラス層、
３……支持部、３１……第二接合ガラス層、４……ハウ
ジング。FIG. 1 is an explanatory view of the structure of a main part of an embodiment of the present invention, and FIG. 2 is an explanatory view of the structure of a conventional example which is generally used in the past. 1 ... Sensor chip, 11 ... Recess, 12 ... Diaphragm, 13 ... Semiconductor piezoresistive gauge, 14 ... Reference chamber, 2a ... Semiconductor substrate, 21 ... First bonding glass layer,
3 ... Supporting part, 31 ... Second bonding glass layer, 4 ... Housing.
Claims (1)
と、 前記センサチップに一面側が第１接合ガラス層を介して
該センサチップと同一の材料からなり同一の面方位で同
一の結晶方向で接合され前記凹部と基準室を構成する半
導体基板と、 前記半導体基板の他面側に第２接合ガラス層を介して取
り付けられ金属よりなる筒状の支持部と、 該支持部の他端が取り付けられる金属よりなるハウジン
グとを具備し、 前記センサチップ及び前記半導体基板と前記支持部との
熱膨張係数が極めて近くなるような支持部材を選択し、 前記センサチップ及び前記半導体基板と前記第１、第２
接合ガラス層との熱膨張係数が極めて近くなるようなガ
ラス材を選択してなる半導体圧力センサ。1. A sensor chip made of a semiconductor, a recess for forming a diaphragm on the sensor chip, a semiconductor piezoresistive gauge provided on the diaphragm, and a sensor glass chip having a first bonding glass layer on one side thereof. A semiconductor substrate made of the same material as the sensor chip and bonded in the same crystal orientation in the same plane orientation to form the recess and the reference chamber, and is attached to the other surface side of the semiconductor substrate via a second bonding glass layer. A cylindrical support part made of metal and a housing made of metal to which the other end of the support part is attached are provided, and the thermal expansion coefficient of the sensor chip and the semiconductor substrate and the support part are very close to each other. A support member is selected, and the sensor chip, the semiconductor substrate, and the first and second
A semiconductor pressure sensor made by selecting a glass material having a coefficient of thermal expansion extremely close to that of the bonding glass layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987122671U JPH064301Y2 (en) | 1987-08-11 | 1987-08-11 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987122671U JPH064301Y2 (en) | 1987-08-11 | 1987-08-11 | Semiconductor pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6427635U JPS6427635U (en) | 1989-02-17 |
| JPH064301Y2 true JPH064301Y2 (en) | 1994-02-02 |
Family
ID=31370817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987122671U Expired - Lifetime JPH064301Y2 (en) | 1987-08-11 | 1987-08-11 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH064301Y2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015007626A (en) * | 2013-06-19 | 2015-01-15 | ハネウェル・インターナショナル・インコーポレーテッド | Integrated soi pressure sensor having silicon stress isolation member |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7476695B2 (en) | 2004-03-16 | 2009-01-13 | Nissan Chemical Industries, Ltd. | Modified stannic oxide-zirconium oxide complex sol and method for preparing same |
| JP4683618B2 (en) * | 2005-02-10 | 2011-05-18 | キヤノンアネルバ株式会社 | Diaphragm type pressure sensor and manufacturing method thereof |
| US8371175B2 (en) * | 2009-10-01 | 2013-02-12 | Rosemount Inc. | Pressure transmitter with pressure sensor mount |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5441304B2 (en) * | 1974-01-25 | 1979-12-07 | ||
| JPS54138384A (en) * | 1978-04-19 | 1979-10-26 | Mitsubishi Electric Corp | Semiconductor pressure converter |
| JPS57171235A (en) * | 1981-04-15 | 1982-10-21 | Toshiba Corp | Semiconductor pressure converter |
-
1987
- 1987-08-11 JP JP1987122671U patent/JPH064301Y2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015007626A (en) * | 2013-06-19 | 2015-01-15 | ハネウェル・インターナショナル・インコーポレーテッド | Integrated soi pressure sensor having silicon stress isolation member |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6427635U (en) | 1989-02-17 |
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