JPH0641770A - Treatment for surface of silicon wafer - Google Patents

Treatment for surface of silicon wafer

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Publication number
JPH0641770A
JPH0641770A JP22062292A JP22062292A JPH0641770A JP H0641770 A JPH0641770 A JP H0641770A JP 22062292 A JP22062292 A JP 22062292A JP 22062292 A JP22062292 A JP 22062292A JP H0641770 A JPH0641770 A JP H0641770A
Authority
JP
Japan
Prior art keywords
surfactant
acid
silicon wafer
fine particles
hydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22062292A
Other languages
Japanese (ja)
Inventor
Takehiko Kezuka
健彦 毛塚
Shigeru Maruyama
茂 丸山
Mitsushi Itano
充司 板野
Motonobu Kubo
元伸 久保
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daikin Industries Ltd
Original Assignee
Daikin Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daikin Industries Ltd filed Critical Daikin Industries Ltd
Priority to JP22062292A priority Critical patent/JPH0641770A/en
Publication of JPH0641770A publication Critical patent/JPH0641770A/en
Pending legal-status Critical Current

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  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To provide a treating method for silicon wafer surface to prevent contamination of the surface with fine particles in the process of cleaning or etching of the silicon wafer surface. CONSTITUTION:The surface of a silicon wafer is cleaned or etched with a treating liquid containing at least one of hydrofluoric acid, hydrochloric acid, nitric acid, hydrogen peroxide, acetic acid, ammonium fluoride, and phosphoric acid. In this process, a surfactant is added to the treating liquid to maintain the zeta-potential of fine particles in the treating liquid to <=+30mV. The silicon wafer is treated with this treating liquid to prevent contamination of the surface with fine particles. Thereby, the amt. of treating liquid used is decreased and the yield is increased.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明はシリコンウエハ表面の処
理方法、更に詳しくはシリコンウエハ表面の微粒子によ
る汚染を防止するシリコンウエハ表面の処理方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for treating the surface of a silicon wafer, and more particularly to a method for treating the surface of a silicon wafer which prevents contamination of the surface of the silicon wafer with fine particles.

【０００２】[0002]

【従来の技術】シリコン単結晶からなる半導体基板（ウ
エハ）上にＬＳＩを形成する半導体集積回路装置の製造
工程では、基板表面の酸化膜（ＳiＯ2）をパターニング
したり、熱処理工程で基板表面に形成される自然酸化膜
を除去したりする際に、フツ酸（ＨＦ）水溶液を用いた
ウエツトエツチング処理が行われる。またＳi表面のエ
ツチング処理にはフツ酸（ＨＦ）−硝酸（ＨＮＯ3）あ
るいは、フツ酸（ＨＦ）−硝酸（ＨＮＯ3）−酢酸（Ｃ
Ｈ3ＣＯＯＨ）を加えたもので処理が行われる。また配
線形成工程などで基板の表面に付着した金属イオンなど
を除去する際には、塩酸（ＨＣl）−過酸化水素（Ｈ2Ｏ
2）水溶液あるいはフツ酸（ＨＦ）−過酸化水素（Ｈ2Ｏ
2）水溶液を用いたウエツト洗浄処理が行われる。これ
らのウエツト洗浄処理においては、上記酸化膜や金属イ
オンなどを除去した後の活性な基板の表面に異物が付着
するのを防止するため、エツチング液又は洗浄液を循環
濾過させるなど、エツチング液又は洗浄液の清浄度を保
つ工夫が必要となる。2. Description of the Related Art In a manufacturing process of a semiconductor integrated circuit device in which an LSI is formed on a semiconductor substrate (wafer) made of silicon single crystal, an oxide film (SiO 2 ) on the surface of the substrate is patterned, or a heat treatment process is performed on the surface of the substrate. A wet etching process using an aqueous solution of hydrofluoric acid (HF) is performed when removing the formed native oxide film. For etching the surface of Si, hydrofluoric acid (HF) -nitric acid (HNO 3 ) or hydrofluoric acid (HF) -nitric acid (HNO 3 ) -acetic acid (C
Process is performed in H 3 COOH) plus. When removing metal ions attached to the surface of the substrate in the wiring forming process, etc., hydrochloric acid (HCl) -hydrogen peroxide (H 2 O) is used.
2 ) Aqueous solution or hydrofluoric acid (HF) -hydrogen peroxide (H 2 O
2 ) A wet cleaning process using an aqueous solution is performed. In these wet cleaning treatments, in order to prevent foreign matter from adhering to the surface of the active substrate after removing the oxide film and metal ions, the etching liquid or the cleaning liquid is circulated and filtered, and the etching liquid or the cleaning liquid is used. It is necessary to devise to keep the cleanliness of.

【０００３】ところが集積回路の微細化に伴い、上記エ
ツチング液又は洗浄液にはさらに高い清浄度が求められ
ているにもかかわらず、ウエハプロセスの増加やウエハ
の大口径化により、エツチング処理槽に持ち込まれる異
物はむしろ増加する傾向にある。However, with the miniaturization of integrated circuits, even higher cleanliness is required for the above-mentioned etching liquid or cleaning liquid. The amount of foreign matter that is stored tends to increase.

【０００４】[0004]

【発明が解決しようとする課題】本発明の目的はシリコ
ンウエハ表面を洗浄処理又はエツチング処理する方法に
おいて、シリコンウエハ表面の微粒子による汚染を防止
するシリコンウエハ表面の処理方法を提供することにあ
る。SUMMARY OF THE INVENTION An object of the present invention is to provide a method of cleaning or etching a surface of a silicon wafer, the method of processing the surface of the silicon wafer to prevent contamination by fine particles on the surface of the silicon wafer.

【０００５】[0005]

【課題を解決するための手段】本発明はフツ化水素酸、
塩酸、硝酸、過酸化水素水、酢酸、フツ化アンモニウ
ム、リン酸の少なくとも１種を含む処理液によりシリコ
ンウエハ表面を洗浄処理又はエツチング処理する方法に
おいて、該処理液に界面活性剤を添加して該処理液中の
微粒子のゼータ電位を＋30mＶ以下に維持し、その処理
液により処理してシリコンウエハ表面の微粒子による汚
染を防止する上記処理方法に係る。The present invention provides hydrofluoric acid,
In a method for cleaning or etching a silicon wafer surface with a treatment liquid containing at least one of hydrochloric acid, nitric acid, hydrogen peroxide, acetic acid, ammonium fluoride and phosphoric acid, a surfactant is added to the treatment liquid. The present invention relates to the above processing method, wherein the zeta potential of fine particles in the treatment liquid is maintained at +30 mV or less, and the treatment liquid is used to prevent contamination of the silicon wafer surface with fine particles.

【０００６】本発明者らは従来の洗浄用薬液、エツチン
グ用薬液にある種の界面活性剤を少量加えるとウエハ表
面に付着する異物微粒子を減少させることができること
を見出した。The present inventors have found that the addition of a small amount of a certain surfactant to the conventional cleaning chemicals and etching chemicals can reduce the foreign particles adhering to the wafer surface.

【０００７】本発明では上記処理液として界面活性剤を
添加した処理液を使用し、その際処理液中の微粒子のゼ
ータ電位を＋30mＶ以下に維持することを特徴とする。The present invention is characterized in that a treatment liquid containing a surfactant is used as the treatment liquid, and the zeta potential of the fine particles in the treatment liquid is maintained at +30 mV or less.

【０００８】本発明で用いられる界面活性剤としてはア
ニオン系、カチオン系、非イオン系の各種のものを例示
できるが、特にアニオン系、非イオン系の界面活性剤が
好ましい。As the surfactant used in the present invention, various anionic, cationic and nonionic surfactants can be exemplified, and anionic and nonionic surfactants are particularly preferable.

【０００９】アニオン系界面活性剤としては、親水基が
一般式 −ＣＯＯＭ、−ＳＯ3Ｍ、−ＯＳＯ3Ｍ（Ｍは水
素、金属原子、アンモニウム基を示す）であるそれぞれ
カルボン酸型、スルホン酸型、硫酸エステル型の界面活
性剤が好ましい。具体的には下記のものが挙げられる。As the anionic surfactant, a hydrophilic group having a general formula —COOM, —SO 3 M, —OSO 3 M (M is hydrogen, a metal atom, or an ammonium group) is a carboxylic acid type or sulfonic acid type, respectively. Type and sulfate ester type surfactants are preferred. Specific examples include the following.

【００１０】ＣＦ3（ＣＦ2）nＣＯＯＨ、（ＣＦ3）2Ｃ
Ｆ（ＣＦ2）nＣＯＯＨ、ＨＣＦ2（ＣＦ2）nＣＯＯＨ、
ＣＦ3（ＣＦ2）n（ＣＨ2）mＣＯＯＨ、ＣＦ3（ＣＦ2）n
ＣＦ＝ＣＨ（ＣＨ2）mＣＯＯＨ、Ｃl（ＣＦ2ＣＦＣl）
ｐＣＦ2ＣＯＯＨ ［ただし、ｎは２〜17、ｍは１〜２、ｐは１〜９の数で
ある。］CF 3 (CF 2 ) n COOH, (CF 3 ) 2 C
F (CF 2 ) n COOH, HCF 2 (CF 2 ) n COOH,
CF 3 (CF 2) n ( CH 2) m COOH, CF 3 (CF 2) n
CF = CH (CH 2 ) m COOH, Cl (CF 2 CFCl)
pCF 2 COOH [where n is 2 to 17, m is 1 to 2 and p is 1 to 9]. ]

【００１１】及び、これらのアルカリ金属塩、アンモニ
ウム塩、第一、第二又は第三アミン塩And alkali metal salts, ammonium salts, primary, secondary or tertiary amine salts thereof

【００１２】ＣnＨ2n+1ＳＯ3Ｍ、ＣnＨ2n+1Ｏ（ＣＨ2Ｃ
Ｈ2Ｏ）mＳＯ3Ｍ又はＣnＨ2n+1−Ｐｈ−ＳＯ3Ｍ（Ｍは
上記と同じ、Ｐｈはフエニレン基、ｎは５〜20、ｍは０
〜20）C n H 2n + 1 SO 3 M, C n H 2n + 1 O (CH 2 C
H 2 O) m SO 3 M or C n H 2n + 1 -Ph- SO 3 M (M is as defined above, Ph is phenylene group, n represents 5 to 20, m is 0
~ 20)

【００１３】これらの具体例としてはＣ12Ｈ25Ｏ(ＣＨ2
ＣＨ2Ｏ)2ＳＯ3Ｎa、Ｃ9Ｈ19ＰｈＯ（ＣＨ2ＣＨ2Ｏ）4
ＳＯ3Ｎａ、Ｃ12Ｈ25Ｏ（ＣＨ2ＣＨ2Ｏ）4ＳＯ3Ｎａ、
Ｃ6Ｆ11ＰｈＳＯ3Ｎａ、Ｃ9Ｆ19ＯＰｈＳＯ3Ｎａ、ＲＣ
Ｈ＝ＣＨ（ＣＨ2）nＳＯ3Ｎａ、Ｃ12Ｈ25ＯＳＯ3ＮａSpecific examples of these include C 12 H 25 O (CH 2
CH 2 O) 2 SO 3 Na, C 9 H 19 PhO (CH 2 CH 2 O) 4
SO 3 Na, C 12 H 25 O (CH 2 CH 2 O) 4 SO 3 Na,
C 6 F 11 PhSO 3 Na, C 9 F 19 OPhSO 3 Na, RC
H = CH (CH 2) n SO 3 Na, C 12 H 25 OSO 3 Na

【００１４】非イオン系界面活性剤としては、親水基が
一般式 −Ｒ'（ＣＨ2ＣＨ2Ｏ）ｑＲ又は−Ｒ'Ｏ（ＣＨ
2ＣＨ2Ｏ）ｑＲ（Ｒは水素、炭素数１〜10のアルキル
基、Ｒ'は水素がフツ素で置換されていることのある炭
素数１〜20の炭化水素基、ｑは０〜20を示す。）である
ポリエチレングリコール型の界面活性剤が好ましい。具
体的には下記のものが挙げられる。[0014] As the nonionic surfactant, hydrophilic group formula -R '(CH 2 CH 2 O ) qR or -R'O (CH
2 CH 2 O) qR (R is hydrogen, an alkyl group having 1 to 10 carbon atoms, R'is a hydrocarbon group having 1 to 20 carbon atoms in which hydrogen may be substituted with fluorine, and q is 0 to 20. Is preferred). Specific examples include the following.

【００１５】Ｃ9Ｆ17Ｏ（ＣＨ2ＣＨ2Ｏ）ｒＣＨ3（ｒ＝
２〜30）、Ｃ9Ｈ19Ｐｈ（ＣＨ2ＣＨ2Ｏ）10Ｈ、Ｃ12Ｈ
25Ｏ（ＣＨ2ＣＨ2Ｏ）9Ｈ、Ｃ9Ｈ19ＰｈＯ（ＣＨ2ＣＨ2
Ｏ）10Ｈ、Ｃ9Ｈ19ＰｈＯ（ＣＨ2ＣＨ2Ｏ）5Ｈ、Ｃ8Ｈ
17ＰｈＯ（ＣＨ2ＣＨ2Ｏ）3Ｈ、Ｃ8Ｈ17Ｐｈ（ＣＨ2Ｃ
Ｈ2Ｏ）10Ｈ（Ｐｈはフエニレン基）C 9 F 17 O (CH 2 CH 2 O) rCH 3 (r =
2~30), C 9 H 19 Ph (CH 2 CH 2 O) 10 H, C 12 H
25 O (CH 2 CH 2 O) 9 H, C 9 H 19 PhO (CH 2 CH 2
O) 10 H, C 9 H 19 PhO (CH 2 CH 2 O) 5 H, C 8 H
17 PhO (CH 2 CH 2 O) 3 H, C 8 H 17 Ph (CH 2 C
H 2 O) 10 H (Ph is a phenylene group)

【００１６】本発明では界面活性剤の添加量は処理液に
対して0.0001〜５重量％、特に0.01〜0.1重量％の範囲
で用いるのが好ましい。In the present invention, the amount of the surfactant added is preferably 0.0001 to 5% by weight, more preferably 0.01 to 0.1% by weight, based on the treatment liquid.

【００１７】本発明において処理液中の微粒子のゼータ
電位（ζ電位）は、市販のζ電位測定装置を用いて行う
ことができる。In the present invention, the zeta potential (ζ potential) of the fine particles in the treatment liquid can be measured by using a commercially available ζ potential measuring device.

【００１８】[0018]

【実施例】以下に実施例及び比較例を挙げて説明する。EXAMPLES Examples and comparative examples will be described below.

【００１９】実施例１〜１１及び比較例１〜４ ４インチシリコンウエハの自然酸化膜を0.5％ＨＦ水溶
液で除去し、超純水でリンスした。これを0.5％のＨＦ
水溶液に標準微粒子として粒径約0.6μmのポリスチレン
ラテツクスを微粒子数が105〜107個／mlになるように添
加し、さらに表１に示す各種の界面活性剤を添加して調
合した処理液の中に10分間浸漬した。その後超純水でリ
ンスし乾燥した後、レーザー表面検査装置を使つてシリ
コンウエハ表面に付着した微粒子数を測定した。結果を
表１に示す。又、実施例と同様の操作で調製した比較処
理液での比較例の結果も表１に示す。表２の付着粒子数
は各２枚づつのシリコンウエハを処理し、各々の付着粒
子数を記載した。Examples 1 to 11 and Comparative Examples 1 to 4 The natural oxide film on the 4-inch silicon wafer was removed with a 0.5% HF aqueous solution and rinsed with ultrapure water. This is 0.5% HF
A treatment prepared by adding polystyrene latex having a particle size of about 0.6 μm to the aqueous solution so that the number of fine particles becomes 10 5 to 10 7 particles / ml, and further adding various surfactants shown in Table 1. It was immersed in the liquid for 10 minutes. Then, after rinsing with ultrapure water and drying, the number of fine particles adhering to the surface of the silicon wafer was measured using a laser surface inspection device. The results are shown in Table 1. Table 1 also shows the result of the comparative example using the comparative treatment liquid prepared by the same operation as that of the example. For the number of adhered particles in Table 2, two silicon wafers each were processed, and the number of adhered particles for each was described.

【００２０】[0020]

【表１】 [Table 1]

【００２１】実施例１２〜１４及び比較例５〜６ ＨＦ水溶液とＨＮＯ3水溶液を混合し、ＨＦ １％及びの
ＨＮＯ3 ５％とを含む混合液を調製し、これを処理液と
し、これに表２に示す界面活性剤を添加して、他は実施
例１と同様にして付着粒子数を測定した。Examples 12 to 14 and Comparative Examples 5 to 6 An HF aqueous solution and an HNO 3 aqueous solution were mixed to prepare a mixed solution containing 1% HF and 5% HNO 3 and used as a treatment solution. The number of adhered particles was measured in the same manner as in Example 1 except that the surfactant shown in Table 2 was added.

【００２２】[0022]

【表２】 [Table 2]

【００２３】実施例１５〜１７及び比較例７〜８ 5.3％ＨＣl 水溶液を処理液とし、これに表３に示す界
面活性剤を添加して、他は実施例１と同様にして付着粒
子数を測定した。Examples 15 to 17 and Comparative Examples 7 to 8 Using 5.3% HCl aqueous solution as a treatment liquid, the surfactant shown in Table 3 was added, and the number of adhered particles was changed in the same manner as in Example 1. It was measured.

【００２４】[0024]

【表３】 [Table 3]

【００２５】実施例１８〜１９及び比較例９〜１０ 各種界面活性剤を200ppmになるように添加したＨＣl水
溶液（pＨは0.5％ＨＦ水溶液と同じ約3.3）に、上記実
施例１で用いたのと同じポリスチレンラテツクスを添加
し、ラテツクス粒子のζ電位を測定した。結果を表４に
示す。Examples 18 to 19 and Comparative Examples 9 to 10 The various kinds of surfactants were added to 200 ppm to prepare an HCI aqueous solution (pH is about 3.3, which is the same as a 0.5% HF aqueous solution), and used in the above Example 1. The same polystyrene latex as in was added, and the ζ potential of the latex particles was measured. The results are shown in Table 4.

【００２６】[0026]

【表４】 [Table 4]

【００２７】[0027]

【発明の効果】本発明におけるシリコン半導体ウエハ表
面の微粒子汚染防止方法は半導体素子の微細化、高集積
化に対応して、洗浄もしくはエツチングを湿式で行う場
合極めて有効なものである。又、洗浄槽、エツチング槽
の循環濾過において、循環濾過回数を減らす、あるい
は、なくすこともでき得る可能性がある。また、ウエハ
表面に付着する微粒子数が、本発明の処理液を使用する
ことで減少することになるので歩留まりが向上する。The method for preventing fine particle contamination on the surface of a silicon semiconductor wafer according to the present invention is extremely effective when the cleaning or etching is carried out by a wet method in response to miniaturization and high integration of semiconductor elements. Further, in the circulation filtration of the washing tank and the etching tank, there is a possibility that the number of circulation filtration can be reduced or eliminated. Further, the number of fine particles adhering to the wafer surface is reduced by using the processing liquid of the present invention, so that the yield is improved.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 板野 充司 大阪府摂津市西一津屋１−１ ダイキン工 業株式会社淀川製作所内 (72)発明者 久保 元伸 大阪府摂津市西一津屋１−１ ダイキン工 業株式会社淀川製作所内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Mitsuji Itano 1-1 Nishiichitsuya, Settsu City, Osaka Prefecture Daikin Industries, Ltd. Yodogawa Works (72) Inventor Motonobu Kubo 1-1 Nishiichitsuya, Settsu City, Osaka Prefecture Daikin Engineering Co., Ltd. Yodogawa Manufacturing Co., Ltd.

Claims (4)

【特許請求の範囲】[Claims] 【請求項１】 フツ化水素酸、塩酸、硝酸、過酸化水素
水、酢酸、フツ化アンモニウム、リン酸の少なくとも１
種を含む処理液によりシリコンウエハ表面を洗浄処理又
はエツチング処理する方法において、該処理液に界面活
性剤を添加して該処理液中の微粒子のゼータ電位を＋30
mＶ以下に維持し、その処理液により処理してシリコン
ウエハ表面の微粒子による汚染を防止する上記処理方
法。1. At least one of hydrofluoric acid, hydrochloric acid, nitric acid, hydrogen peroxide solution, acetic acid, ammonium fluoride and phosphoric acid.
In a method of cleaning or etching the surface of a silicon wafer with a treatment liquid containing seeds, a surfactant is added to the treatment liquid to increase the zeta potential of fine particles in the treatment liquid by +30.
The above-mentioned processing method for preventing contamination by fine particles on the surface of a silicon wafer by maintaining the voltage at or below mV and processing with the processing solution. 【請求項２】 界面活性剤が、親水基が一般式 −ＣＯ
ＯＭ、−ＳＯ3Ｍ、−ＯＳＯ3Ｍ（Ｍは水素、金属原子、
アンモニウム基を示す）であるそれぞれカルボン酸型、
スルホン酸型、硫酸エステル型のアニオン系界面活性剤
である請求項１の処理方法。2. The surfactant has a hydrophilic group of the general formula —CO
OM, -SO 3 M, -OSO 3 M (M is a hydrogen, metal atom,
Carboxylic acid type, which represents an ammonium group),
The treatment method according to claim 1, wherein the anionic surfactant is a sulfonic acid type or a sulfuric acid ester type. 【請求項３】 界面活性剤が、親水基が一般式 −Ｒ'
（ＣＨ2ＣＨ2Ｏ）ｑＲ又は−Ｒ'Ｏ（ＣＨ2ＣＨ2Ｏ）ｑ
Ｒ（Ｒは水素、アルキル基、Ｒ'は水素がフツ素で置換
されていることのある炭化水素基、ｑは０〜20を示す）
であるポリエチレングリコール型の非イオン系界面活性
剤である請求項１の処理方法。3. The surfactant has a hydrophilic group represented by the general formula —R ′.
(CH 2 CH 2 O) qR or -R'O (CH 2 CH 2 O) q
R (R is hydrogen, an alkyl group, R'is a hydrocarbon group in which hydrogen may be substituted with fluorine, q is 0 to 20)
The treatment method according to claim 1, which is a polyethylene glycol type nonionic surfactant. 【請求項４】 界面活性剤の添加量が処理液に対して0.
0001〜５重量％の範囲である請求項１の処理方法。4. The amount of surfactant added is 0.
The processing method according to claim 1, which is in the range of 0001 to 5% by weight.
JP22062292A 1992-07-27 1992-07-27 Treatment for surface of silicon wafer Pending JPH0641770A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22062292A JPH0641770A (en) 1992-07-27 1992-07-27 Treatment for surface of silicon wafer

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JP22062292A JPH0641770A (en) 1992-07-27 1992-07-27 Treatment for surface of silicon wafer

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WO1995020642A1 (en) * 1994-01-26 1995-08-03 Daikin Industries, Ltd. Cleaning agent and method
EP0674343A2 (en) * 1994-03-25 1995-09-27 Shin-Etsu Handotai Company Limited Method for storing silicon wafers
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WO1997018582A1 (en) * 1995-11-15 1997-05-22 Daikin Industries, Ltd. Wafer-cleaning solution and process for the production thereof
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US5944907A (en) * 1995-03-06 1999-08-31 Ohmi; Tadahiro Cleaning device and method
US6063205A (en) * 1998-01-28 2000-05-16 Cooper; Steven P. Use of H2 O2 solution as a method of post lap cleaning
US6277203B1 (en) 1998-09-29 2001-08-21 Lam Research Corporation Method and apparatus for cleaning low K dielectric and metal wafer surfaces
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US6562726B1 (en) 1999-06-29 2003-05-13 Micron Technology, Inc. Acid blend for removing etch residue
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US7354863B2 (en) * 2004-03-19 2008-04-08 Micron Technology, Inc. Methods of selectively removing silicon
US7528075B2 (en) * 2004-02-25 2009-05-05 Hrl Laboratories, Llc Self-masking defect removing method
US7704939B2 (en) 2004-08-31 2010-04-27 Sanyo Chemical Industries, Ltd. Surfactant
US7896970B2 (en) 2004-08-10 2011-03-01 Kabushiki Kaisha Toshiba Semiconductor substrate cleaning liquid and semiconductor substrate cleaning process
WO2011101936A1 (en) * 2010-02-18 2011-08-25 シャープ株式会社 Etching method and etching device
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JP2012177055A (en) * 2011-02-28 2012-09-13 Sanyo Chem Ind Ltd Detergent for electronic material
US8324143B2 (en) 2008-12-19 2012-12-04 Sanyo Chemical Industries, Ltd. Cleaning agent for electronic materials
KR20130024755A (en) * 2011-08-31 2013-03-08 후지필름 가부시키가이샤 Etching method, silicon etchant used in the same, and method of manufacturing semiconductor substrate product
JP2013538007A (en) * 2010-09-01 2013-10-07 ビーエーエスエフ ソシエタス・ヨーロピア Aqueous solution and etching solution, and method for squeezing the surface of single crystal and polycrystalline silicon substrates
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WO1995020642A1 (en) * 1994-01-26 1995-08-03 Daikin Industries, Ltd. Cleaning agent and method
US5676760A (en) * 1994-03-25 1997-10-14 Nec Corporation Method for wet processing of a semiconductor substrate
EP0674343A2 (en) * 1994-03-25 1995-09-27 Shin-Etsu Handotai Company Limited Method for storing silicon wafers
EP0674343A3 (en) * 1994-03-25 1997-07-02 Shinetsu Handotai Kk Method for storing silicon wafers.
WO1996021942A1 (en) * 1995-01-13 1996-07-18 Daikin Industries, Ltd. Method of cleaning substrates
US5944907A (en) * 1995-03-06 1999-08-31 Ohmi; Tadahiro Cleaning device and method
US5681398A (en) * 1995-03-17 1997-10-28 Purex Co., Ltd. Silicone wafer cleaning method
US5635463A (en) * 1995-03-17 1997-06-03 Purex Co., Ltd. Silicon wafer cleaning fluid with HN03, HF, HCl, surfactant, and water
KR100370695B1 (en) * 1995-03-27 2003-03-19 가부시키가이샤 퓨아렉스 Silicon Wafer Cleaning Liquid and Silicon Wafer Cleaning Method
EP0871209A1 (en) * 1995-11-15 1998-10-14 Daikin Industries, Limited Wafer-cleaning solution and process for the production thereof
US6068788A (en) * 1995-11-15 2000-05-30 Daikin Industries, Ltd. Wafer-cleaning solution and process for the production thereof
US6159865A (en) * 1995-11-15 2000-12-12 Daikin Industries, Ltd. Wafer treating solution and method for preparing the same
WO1997018582A1 (en) * 1995-11-15 1997-05-22 Daikin Industries, Ltd. Wafer-cleaning solution and process for the production thereof
EP0871209A4 (en) * 1995-11-15 2006-02-08 Daikin Ind Ltd Wafer-cleaning solution and process for the production thereof
JPH09186116A (en) * 1995-12-27 1997-07-15 Toshiba Corp Manufacture of semiconductor device and semiconductor manufacture device
US6063205A (en) * 1998-01-28 2000-05-16 Cooper; Steven P. Use of H2 O2 solution as a method of post lap cleaning
US6794305B2 (en) * 1998-09-10 2004-09-21 Renesas Technology Corp. Method of manufacturing a semiconductor integrated circuit device
US6277203B1 (en) 1998-09-29 2001-08-21 Lam Research Corporation Method and apparatus for cleaning low K dielectric and metal wafer surfaces
US6319330B1 (en) 1998-09-29 2001-11-20 Lam Research Corporation Method and apparatus for cleaning low K dielectric and metal wafer surfaces
US7261835B2 (en) 1999-06-29 2007-08-28 Micron Technology, Inc. Acid blend for removing etch residue
US6562726B1 (en) 1999-06-29 2003-05-13 Micron Technology, Inc. Acid blend for removing etch residue
US6783695B1 (en) 1999-06-29 2004-08-31 Micron Technology, Inc. Acid blend for removing etch residue
US6517738B1 (en) 1999-06-29 2003-02-11 Micron Technology, Inc. Acid blend for removing etch residue
US6453914B2 (en) * 1999-06-29 2002-09-24 Micron Technology, Inc. Acid blend for removing etch residue
SG94843A1 (en) * 2001-04-12 2003-03-18 Nishiyama Stainless Chemical Co Ltd Method and apparatus for chemically polishing liquid crystal glass substrate
CN100462319C (en) * 2001-04-12 2009-02-18 西山不锈化学股份有限公司 Chemical polishing method and glass base plate with the method and chemical polishing device
KR20030010180A (en) * 2001-07-25 2003-02-05 김경진 Cleaning solution of semiconductor device and method of cleaning using the same
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WO2005052109A1 (en) * 2003-11-25 2005-06-09 Kishimoto Sangyo Co.,Ltd. Cleaning agent
US7579307B2 (en) 2003-11-25 2009-08-25 Kishimoto Sangyo Co., Ltd. Cleaner for semiconductor devices
JP2005154558A (en) * 2003-11-25 2005-06-16 Kishimoto Sangyo Co Ltd Detergent
JP2005162893A (en) * 2003-12-03 2005-06-23 Kanto Chem Co Inc Etching liquid composition of metal film
US8557711B2 (en) 2003-12-03 2013-10-15 Kanto Kagaku Kabushiki Kaisha Etching solution composition for metal films
US7951719B2 (en) 2004-02-25 2011-05-31 Hrl Laboratories, Llc Self-masking defect removing method
US7528075B2 (en) * 2004-02-25 2009-05-05 Hrl Laboratories, Llc Self-masking defect removing method
US7354863B2 (en) * 2004-03-19 2008-04-08 Micron Technology, Inc. Methods of selectively removing silicon
US7896970B2 (en) 2004-08-10 2011-03-01 Kabushiki Kaisha Toshiba Semiconductor substrate cleaning liquid and semiconductor substrate cleaning process
US7704939B2 (en) 2004-08-31 2010-04-27 Sanyo Chemical Industries, Ltd. Surfactant
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WO2007022718A1 (en) * 2005-08-25 2007-03-01 Chunde Liu Alkyl aryl alkyl alcohols, their derivations and preparation process thereof
KR100771314B1 (en) * 2006-11-16 2007-10-29 삼성전기주식회사 Etching solution containing ceramic nano particles and process for forming circuits using the same
US8324143B2 (en) 2008-12-19 2012-12-04 Sanyo Chemical Industries, Ltd. Cleaning agent for electronic materials
WO2011101936A1 (en) * 2010-02-18 2011-08-25 シャープ株式会社 Etching method and etching device
JP2012074678A (en) * 2010-08-31 2012-04-12 Mitsubishi Chemicals Corp Substrate cleaning liquid and cleaning method for semiconductor device
US9365802B2 (en) 2010-08-31 2016-06-14 Mitsubishi Chemical Corporation Cleaning liquid for semiconductor device substrates and method of cleaning substrate for semiconductor devices
EP2611881A4 (en) * 2010-09-01 2017-08-30 Basf Se Aqueous acidic solution and etching solution and method for texturizing surface of single crystal and polycrystal silicon substrates
JP2013538007A (en) * 2010-09-01 2013-10-07 ビーエーエスエフ ソシエタス・ヨーロピア Aqueous solution and etching solution, and method for squeezing the surface of single crystal and polycrystalline silicon substrates
JP2012177055A (en) * 2011-02-28 2012-09-13 Sanyo Chem Ind Ltd Detergent for electronic material
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