JPH0636860A - Quick heating type positive characteristic thermistor heating device - Google Patents
Quick heating type positive characteristic thermistor heating deviceInfo
- Publication number
- JPH0636860A JPH0636860A JP4189667A JP18966792A JPH0636860A JP H0636860 A JPH0636860 A JP H0636860A JP 4189667 A JP4189667 A JP 4189667A JP 18966792 A JP18966792 A JP 18966792A JP H0636860 A JPH0636860 A JP H0636860A
- Authority
- JP
- Japan
- Prior art keywords
- temperature coefficient
- positive temperature
- characteristic thermistor
- positive characteristic
- heating device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y02E60/122—
Landscapes
- Resistance Heating (AREA)
- Fixing For Electrophotography (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、速熱形正特性サーミス
タ発熱装置に関し、特に複写機に適用される加熱定着用
ヒータに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a rapid heating type positive temperature coefficient thermistor heating device, and more particularly to a heating and fixing heater applied to a copying machine.
【０００２】[0002]
【従来の技術】正特性（正の抵抗温度特性：ＰＴＣ）サ
ーミスタは、正特性サーミスタの両面に電極を形成し、
両電極に電圧を印加することにより発熱させるもので、
ある温度で抵抗値が急激に上昇するため、安全性が高い
という特徴があり、様々な加熱用ヒータとして使用され
ている。また、この正特性サーミスタは、入電時、突入
電流が生じるため、温度の立ち上りが速いことが要求さ
れる用途にも向いている。これらの用途のうち、特に立
ち上りが要求される用途として最近になって注目されて
いるものに、加熱定着用ヒータがある。2. Description of the Related Art A positive temperature coefficient (positive temperature coefficient of resistance: PTC) thermistor has electrodes formed on both sides of a positive temperature coefficient thermistor.
It generates heat by applying a voltage to both electrodes.
Since the resistance value sharply rises at a certain temperature, it is characterized by high safety and is used as various heating heaters. In addition, this positive temperature coefficient thermistor is suitable for applications where a rapid rise in temperature is required because an inrush current is generated when power is input. Among these applications, a heater for heating and fixing is one that has recently attracted attention as an application that requires a special start-up.
【０００３】この立ち上り速度を高める手段としては、
これまでに、抵抗値を下げて、突入電流を増加させる方
法や、正特性サーミスタ全体の形状を小型、薄肉化する
方法が考えられている。As a means for increasing the rising speed,
Heretofore, methods of lowering the resistance value to increase the inrush current and methods of reducing the size and thickness of the entire positive temperature coefficient thermistor have been considered.
【０００４】しかしながら、抵抗値を下げる方法につい
ては、ブレーカーの動作電流等を考慮し、使用できる範
囲があり、正特性サーミスタを小型、薄肉化する方法は
安全性や強度、熱容量等の面から限度があった。また、
その他の手段として、実開昭５５−１３６１９３号公報
には、電極板を溶射層にする方法が提案されているが、
根本的解決になっていなかった。However, the method of lowering the resistance value has a range in which it can be used in consideration of the operating current of the breaker, and the method of making the PTC thermistor smaller and thinner has a limit in terms of safety, strength, heat capacity, etc. was there. Also,
As another method, Japanese Utility Model Publication No. 55-136193 proposes a method in which an electrode plate is formed into a sprayed layer.
It wasn't a fundamental solution.
【０００５】図２，図３は、従来の正特性サーミスタの
特性を示した図で、比抵抗の分布がサーミスタの厚み方
向についてほとんど均質か、又は中心部が高いというの
が、ごく一般的である。このような素子に電圧を印加し
た場合、比抵抗の分布が図２，図３のようであるのと、
発生した熱がこもりやすい性質であるため、温度分布
は、いずれにしても、中央部が高い状態になりやすい。
すなわち、正特性サーミスタの表面の温度上昇は、中央
部に発生した熱が表面に伝わっていることによる割合が
高いと考えられる。このような現象においては、正特性
サーミスタは、熱伝導率が悪いため、温度の立上り速度
が要求される場合に電流値に制限がある場合には、時間
的な限界が生じてしまう。FIGS. 2 and 3 are diagrams showing the characteristics of a conventional positive temperature coefficient thermistor, and it is very common that the distribution of the specific resistance is almost uniform in the thickness direction of the thermistor, or the central portion is high. is there. When a voltage is applied to such an element, the distribution of resistivity is as shown in FIGS. 2 and 3,
Since the generated heat tends to be concentrated, the temperature distribution tends to be high in the central portion in any case.
That is, it is considered that the temperature rise of the surface of the PTC thermistor is high because the heat generated in the central portion is transmitted to the surface. In such a phenomenon, since the positive temperature coefficient thermistor has a poor thermal conductivity, a time limit occurs when the current value is limited when the temperature rising speed is required.
【０００６】[0006]
【発明が解決しようとする課題】本発明が解決すべき課
題は、電圧の集中が表面に起きるような抵抗の分布をも
たせた速熱形正特性サーミスタ発熱装置を提供すること
にある。SUMMARY OF THE INVENTION The problem to be solved by the present invention is to provide a rapid heating type positive temperature coefficient thermistor heating device having a resistance distribution such that the concentration of voltage occurs on the surface.
【０００７】[0007]
【課題を解決するための手段】前記課題を解決するた
め、本発明の速熱形正特性サーミスタ発熱装置は、厚さ
方向において比抵抗の偏りがある正特性サーミスタを用
いて、比抵抗分布の高い側を被加熱物に接する側の放熱
板と密着させた構成としている。In order to solve the above-mentioned problems, a rapid heating type positive temperature coefficient thermistor heat generating device of the present invention uses a positive temperature coefficient thermistor having a deviation of the specific resistance in the thickness direction to obtain a specific resistance distribution. The high side is in close contact with the heat dissipation plate on the side in contact with the object to be heated.
【０００８】[0008]
【作用】本発明の正特性サーミスタ発熱装置は、素子内
部の比抵抗分布を厚さ方向において、一方に偏らせ、電
圧の集中を意図的に起こし、表面の立上り温度を速くさ
せようとするものである。図１はその特性を示すもの
で、このような抵抗の分布にすることによって、電圧の
集中を表面に起こし、立上り速度を速くすることができ
る。The positive temperature coefficient thermistor heating device of the present invention is intended to bias the resistivity distribution inside the element to one side in the thickness direction to intentionally cause the concentration of voltage and to accelerate the rising temperature of the surface. Is. FIG. 1 shows its characteristics. By making such a resistance distribution, voltage concentration can be caused on the surface and the rising speed can be increased.
【０００９】[0009]
【実施例】以下、本発明を実施例に基づいて具体的に説
明する。図４は本発明の発熱装置の実施例を示す斜視図
であり、１は正特性（ＰＴＣ）サーミスタ、２は電極で
ある。本実施例では、図１（ａ）の比抵抗特性を厚さ方
向に沿って有するようにする。電界密度は比抵抗の高い
所ほど高密度になるため、図１（ｂ）に示すようにな
り、したがって温度分布は図１（ｃ）に示すようにな
る。EXAMPLES The present invention will be specifically described below based on examples. FIG. 4 is a perspective view showing an embodiment of the heat generating device of the present invention, in which 1 is a positive temperature coefficient (PTC) thermistor and 2 is an electrode. In this embodiment, the resistivity characteristic of FIG. 1A is provided along the thickness direction. Since the electric field density becomes higher as the specific resistance becomes higher, the electric field density becomes as shown in FIG. 1 (b), and the temperature distribution becomes as shown in FIG. 1 (c).
【００１０】図４の発熱装置の電極２に電圧を印加する
と、正特性サーミスタ１における抵抗の高い所に電圧が
集中し、温度が上昇する。温度が上昇すると、ＰＴＣ特
性に従い、抵抗値が上昇し、さらに電圧が集中すること
になり、ずっと、その部分が昇温していくことになる。
本発明においては、この一連の現象が、表面付近で集中
的に起こり、昇温速度が速い特性になるのである。When a voltage is applied to the electrode 2 of the heat generating device shown in FIG. 4, the voltage concentrates on the high resistance portion of the positive temperature coefficient thermistor 1 and the temperature rises. When the temperature rises, the resistance value rises according to the PTC characteristic, and the voltage further concentrates, and the temperature of that portion continues to rise.
In the present invention, this series of phenomena occurs intensively in the vicinity of the surface, and the temperature rising rate becomes fast.
【００１１】このように比抵抗の偏りがある正特性サー
ミスタの製造方法はいろいろ考えられるが、例えば、図
５のように通常は焼成時に液相になり、冷却時固化し
て、析出する成分を反応しやすいセッター３を用いて、
その成分を吸収させる方法が考えられる。例えば正特性
サーミスタ１としてＢａＴｉＯ3 を用いる場合、セッタ
ー３としてはＺｒＯ2 系の材料を用いることができる。Although various methods of manufacturing a positive temperature coefficient thermistor having a bias of the specific resistance as described above can be considered, for example, as shown in FIG. 5, a component that normally becomes a liquid phase during firing and solidifies during cooling and precipitates is obtained. Using the setter 3 which is easy to react,
A method of absorbing the component can be considered. For example, when BaTiO 3 is used as the positive temperature coefficient thermistor 1, a ZrO 2 based material can be used as the setter 3.
【００１２】また、図６のように、遷移金属酸化物やガ
ラス成分等の高抵抗物質４を粒界に拡散させたり、粒界
物質と反応させて、高抵抗層を形成させる方法もとれ
る。同様に、粒界物質と反応させて、逆に低抵抗層を大
きく形成させてもよい。さらに図７のように、高抵抗の
正特性サーミスタのグリーンシート１’を正特性サーミ
スタ１に接着して、同時に焼成する方法も考えられる。Further, as shown in FIG. 6, a method of forming a high resistance layer by diffusing a high resistance substance 4 such as a transition metal oxide or a glass component to a grain boundary or by reacting with a grain boundary substance can be used. Similarly, by reacting with the grain boundary material, a large low resistance layer may be formed. Further, as shown in FIG. 7, a method in which a green sheet 1'of a high resistance positive temperature coefficient thermistor is adhered to the positive temperature coefficient thermistor 1 and simultaneously fired is also conceivable.
【００１３】また、同じ効果を得る方法として、違う組
成の粉末を傾斜組成させながら、溶射やスリップキャス
ト及びスパッタリングにより形成することも考えられ
る。As a method of obtaining the same effect, it is conceivable to form powders having different compositions by gradient spraying, slip casting or sputtering.
【００１４】いずれにしても、正特性サーミスタの両主
面いずれかに高抵抗層をもたせ、図８（ａ）に示すよう
に高抵抗層側を放熱板５に密着させることにより、図８
（ｂ）に示すように立上りのすぐれた正特性サーミスタ
発熱装置を得ることができる。なお、図８中６は電極板
である。In any case, a high resistance layer is provided on either of the two main surfaces of the positive temperature coefficient thermistor, and the high resistance layer side is brought into close contact with the heat sink 5 as shown in FIG.
As shown in (b), it is possible to obtain a positive temperature coefficient thermistor heat generating device having an excellent rise. In addition, 6 in FIG. 8 is an electrode plate.
【００１５】本発明は、定着用ヒータをはじめとして、
パネルヒータなど、特に正特性サーミスタ素子の片面の
みを発熱させる用途に適している。The present invention includes a fixing heater,
It is particularly suitable for applications such as panel heaters where only one side of the PTC thermistor element generates heat.
【００１６】なお、本発明品の効果を一段と高めるため
には、ヒーター裏の電極部、および正特性素子側面に断
熱材を介在させたり、シリコン樹脂、エポキシ樹脂、ポ
リイミド系樹脂、イミド系樹脂、ケトン系樹脂、フッ素
系樹脂、ポリフェニレンサルファイト樹脂等で周囲を固
める方法をとってもよい。In order to further enhance the effect of the product of the present invention, a heat insulating material is interposed between the electrode portion on the back of the heater and the side surface of the PTC element, or a silicone resin, an epoxy resin, a polyimide resin, an imide resin, A method of solidifying the periphery with a ketone resin, a fluorine resin, a polyphenylene sulfite resin, or the like may be used.
【００１７】[0017]
【発明の効果】上述したように、本発明によれば、厚さ
方向において比抵抗の偏りがある正特性サーミスタを用
いて、比抵抗の高い側を被加熱物に接する側の放熱板と
密着させたことにより、立上りのすぐれた正特性サーミ
スタ発熱装置を得ることができる。As described above, according to the present invention, by using a positive temperature coefficient thermistor having a deviation of the specific resistance in the thickness direction, the side having the higher specific resistance is brought into close contact with the heat dissipation plate on the side in contact with the object to be heated. By doing so, it is possible to obtain a positive temperature coefficient thermistor heat generating device having an excellent start-up.
【図１】 本発明の正特性サーミスタの特性図である。FIG. 1 is a characteristic diagram of a positive temperature coefficient thermistor of the present invention.
【図２】 従来の正特性サーミスタの特性図である。FIG. 2 is a characteristic diagram of a conventional positive temperature coefficient thermistor.
【図３】 他の従来の正特性サーミスタの特性図であ
る。FIG. 3 is a characteristic diagram of another conventional positive temperature coefficient thermistor.
【図４】 本発明に係る正特性サーミスタ発熱装置の斜
視図である。FIG. 4 is a perspective view of a positive temperature coefficient thermistor heating device according to the present invention.
【図５】 本発明に係る正特性サーミスタ発熱装置の製
造方法を示す説明図である。FIG. 5 is an explanatory view showing a method of manufacturing the positive temperature coefficient thermistor heating device according to the present invention.
【図６】 本発明に係る正特性サーミスタ発熱装置の他
の製造方法を示す説明図である。FIG. 6 is an explanatory view showing another manufacturing method of the positive temperature coefficient thermistor heating device according to the present invention.
【図７】 本発明に係る正特性サーミスタ発熱装置のさ
らに他の製造方法を示す説明図である。FIG. 7 is an explanatory view showing still another method of manufacturing the positive temperature coefficient thermistor heating device according to the present invention.
【図８】 本発明の実施例の断面図および特性図であ
る。FIG. 8 is a sectional view and a characteristic diagram of an example of the present invention.
１ 正特性サーミスタ、２ 電極、３ セッター、４
高抵抗物質、５ 放熱板、６ 電極板1 PTC thermistor, 2 electrodes, 3 setter, 4
High resistance material, 5 heat sink, 6 electrode plate
Claims (1)
特性サーミスタを用いて、比抵抗分布の高い側を被加熱
物に接する側の放熱板と密着させたことを特徴とする速
熱形正特性サーミスタ発熱装置。1. A rapid heating type wherein a positive temperature coefficient thermistor having a bias of specific resistance in the thickness direction is used to bring a side having a high specific resistance distribution into close contact with a heat dissipation plate on a side in contact with an object to be heated. PTC thermistor heating device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4189667A JPH0636860A (en) | 1992-07-16 | 1992-07-16 | Quick heating type positive characteristic thermistor heating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4189667A JPH0636860A (en) | 1992-07-16 | 1992-07-16 | Quick heating type positive characteristic thermistor heating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0636860A true JPH0636860A (en) | 1994-02-10 |
Family
ID=16245164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4189667A Pending JPH0636860A (en) | 1992-07-16 | 1992-07-16 | Quick heating type positive characteristic thermistor heating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0636860A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5976019A (en) * | 1995-09-13 | 1999-11-02 | Sega Enterprises, Ltd. | Running simulation apparatus |
-
1992
- 1992-07-16 JP JP4189667A patent/JPH0636860A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5976019A (en) * | 1995-09-13 | 1999-11-02 | Sega Enterprises, Ltd. | Running simulation apparatus |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20000811 |