JPH0635467Y2 - Quartz wafer holder for vertical CVD equipment - Google Patents
Quartz wafer holder for vertical CVD equipmentInfo
- Publication number
- JPH0635467Y2 JPH0635467Y2 JP6652787U JP6652787U JPH0635467Y2 JP H0635467 Y2 JPH0635467 Y2 JP H0635467Y2 JP 6652787 U JP6652787 U JP 6652787U JP 6652787 U JP6652787 U JP 6652787U JP H0635467 Y2 JPH0635467 Y2 JP H0635467Y2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- holder
- film
- wafer holder
- quartz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【考案の詳細な説明】 〔産業上の利用分野〕 本考案は縦型CVD装置を用いてウェーハ表面に低温酸化
膜（LTO膜）あるいはリンドープ低温酸化膜等のCVD膜を
生成する際に用いる石英製ウェーハホルダに関する。[Detailed Description of the Invention] [Industrial field of application] The present invention is quartz used when a CVD film such as a low temperature oxide film (LTO film) or a phosphorus-doped low temperature oxide film is formed on a wafer surface by using a vertical CVD apparatus. The present invention relates to a wafer holder.
まず、第３図を用いて縦型CVD装置のウェーハ搬送機構
部を説明する。First, the wafer transfer mechanism of the vertical CVD apparatus will be described with reference to FIG.
カセット１に納められたウェーハ２は伸縮及び上下動機
構を持ったウェーハ立替機３のウェーハ搬送アーム４の
真空吸着部4a（第４図参照）に吸着されて石英製ウェー
ハボート５に１枚ずつ装填される。この時、ウェーハ２
の表面にポリシリコン膜、窒化膜などのCVD膜を生成す
るに際しては直接，石英製ウェーハボート５上にウェー
ハ２を装填するのであるが、SiH4とO2を用いたLTO膜
（生成温度300〜400℃）やPSG膜（LTO膜にリンをドープ
した膜）、あるいはSiH4とN2Oを用いる高温酸化膜（HTO
膜、生成温度700〜850℃）、リンドープポリシリコン膜
などの生成においては第２図に示すような石英製のウェ
ーハホルダ６が用いられている。The wafers 2 stored in the cassette 1 are adsorbed by the vacuum adsorption part 4a (see FIG. 4) of the wafer transfer arm 4 of the wafer transfer device 3 having the expansion / contraction and vertical movement mechanism, and the wafers 2 are transferred to the quartz wafer boat 5 one by one. Is loaded. At this time, wafer 2
When a CVD film such as a polysilicon film or a nitride film is formed on the surface of the wafer, the wafer 2 is directly loaded on the quartz wafer boat 5, but an LTO film using SiH 4 and O 2 (generation temperature 300 ~ 400 ℃), PSG film (LTO film doped with phosphorus), or SiH 4 and N 2 O high temperature oxide film (HTO
A wafer holder 6 made of quartz as shown in FIG. 2 is used for forming a film, a forming temperature of 700 to 850 ° C.) and a phosphorus-doped polysilicon film.
この石英製ウェーハホルダ６はホルダ本体6a上に段差7a
を設けたつめ７が設けられており、ウェーハ２をホルダ
本体6a面より4mm程浮かせている。ウェーハ２をホルダ
６に装着あるいは脱着する時にはウェーハ２とホルダ本
体6aの間にウェーハ立替機３のウェーハ搬送アーム４の
真空吸着部4aを入れてウェーハ２の裏面を吸着して移動
を行う。This quartz wafer holder 6 has a step 7a on the holder body 6a.
Is provided, and the wafer 2 is lifted by about 4 mm from the surface of the holder body 6a. When the wafer 2 is attached to or detached from the holder 6, the vacuum suction portion 4a of the wafer transfer arm 4 of the wafer transfer machine 3 is inserted between the wafer 2 and the holder body 6a to move the wafer 2 by sucking the back surface thereof.
なお、第３図中、８はカセットエレベータ、９はボート
移し替え機構、10,11は石英製ウェーハボート５の昇降
機構、12は反応管で、ボート移し替え機構９により膜生
成処理済のウェーハを載置したボート５と未処理ウェー
ハを載置したボート５を移し替え，昇降機構11により反
応管12内に下方よりボート５を入れたり出したりするよ
うになっており、入れた状態でガスインレット13より反
応ガスを供給して反応管12内でウェーハ表面にCVD膜を
生成することになる。In FIG. 3, 8 is a cassette elevator, 9 is a boat transfer mechanism, 10 and 11 are elevating and lowering mechanisms for the quartz wafer boat 5, 12 is a reaction tube, and the wafers have been subjected to film formation processing by the boat transfer mechanism 9. The boat 5 on which the wafer 5 is placed and the boat 5 on which the unprocessed wafer is placed are transferred, and the boat 5 is put into and taken out of the reaction tube 12 from below by the elevating mechanism 11. A reaction gas is supplied from the inlet 13 to form a CVD film on the wafer surface in the reaction tube 12.
従来の石英製ウェーハホルダ６は第２図示のようにホル
ダ本体6a上に、ウェーハ２を載置する段差7aを設けたつ
め７が設けられているため、当該ウェーハホルダ６を用
いて後記第１表の生成条件下においてLTO膜を生成した
場合には後記第２表No.2に示すようにウェーハ周辺部の
膜厚が厚くなり、ウェーハ周辺5mm部分の膜厚均一性は
±10％を超えてしまい全体の膜厚均一性は±４〜８％に
なる。Since the conventional quartz wafer holder 6 is provided with the pawl 7 having the step 7a for mounting the wafer 2 on the holder body 6a as shown in the second illustration, the wafer holder 6 will be used for the first description below. When the LTO film is formed under the conditions shown in the table, the film thickness around the wafer becomes thicker as shown in No. 2 in Table 2 below, and the film thickness uniformity at the 5 mm part around the wafer exceeds ± 10%. The overall film thickness uniformity is ± 4 to 8%.
ここで第２表No.1に示すようにウェーハホルダ６にウェ
ーハ２を密着させて生成を行うと、周辺部が厚くなる傾
向はなくなり、全体の膜厚均一性は±２〜３％となり均
一な膜厚分布を持った膜が得られる。このことからウェ
ーハホルダよりウェーハを離して置く程、膜厚分布の均
一性が悪くなることが判る。 When the wafer 2 is adhered to the wafer holder 6 as shown in Table 2 No. 1, the peripheral portion does not tend to be thick, and the overall film thickness uniformity is ± 2 to 3%. A film having a wide film thickness distribution can be obtained. From this, it is understood that the more the wafer is placed away from the wafer holder, the worse the uniformity of the film thickness distribution becomes.
ウェーハ立替機３を用いてウェーハ２をホルダ６に着脱
する場合にはウェーハ搬送アーム４の厚さが2mm程有る
ためウェーハを4mm位，ホルダより離さなければならな
いので従来のホルダ６を改善して膜厚均一性を改良する
必要があった。When the wafer 2 is attached to and detached from the holder 6 by using the wafer sorter 3, since the wafer transfer arm 4 has a thickness of about 2 mm, the wafer must be separated from the holder by about 4 mm. It was necessary to improve the film thickness uniformity.
〔考案が解決しようとする問題点〕 上記のように従来ホルダ６ではウェーハを載置するつめ
７に段差7aが設けられているため、全体の膜厚均一性が
±４〜８％と悪いという問題点があった。[Problems to be Solved by the Invention] As described above, in the conventional holder 6, since the step 7a is provided on the claw 7 on which the wafer is placed, the overall film thickness uniformity is poor at ± 4 to 8%. There was a problem.
本考案ウェーハホルダは、第１図示のようにウェーハ２
の表面にLTO膜,PSG膜,HTO膜，ドープシリコン膜等を生
成するのに用い、円形で材質が石英製のウェーハホルダ
において、ウェーハホルダ本体6a上に馬蹄形板状体14を
設け、この板状体14に沿って複数個、ウェーハ移動防止
突起15を設けてなる。The wafer holder according to the present invention is provided with a wafer holder 2 as shown in FIG.
Used for producing LTO film, PSG film, HTO film, doped silicon film, etc. on the surface of a wafer holder made of quartz and having a circular shape, a horseshoe plate 14 is provided on the wafer holder body 6a. A plurality of wafer movement preventing projections 15 are provided along the body 14.
ウェーハ搬送アーム４の真空吸着部4aに吸着されて搬送
されてきたウェーハ２は本考案ウェーハホルダの馬蹄形
板状体14に載置されるが、当該板状体14に段差が設けら
れていないため、反応ガスの流れを均一にでき、全体の
膜厚均一性が改善されることになる。The wafer 2 sucked and transferred by the vacuum suction section 4a of the wafer transfer arm 4 is placed on the horseshoe-shaped plate 14 of the wafer holder of the present invention, but since the plate 14 is not provided with a step. The flow of the reaction gas can be made uniform, and the uniformity of the overall film thickness can be improved.
以下図面に基づいて本考案の実施例を説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図（ａ）は本考案ウェーハホルダの１実施例を示す
斜視図、第１図（ｂ）は本実施例にウェーハを載置した
状態を示す斜視図、第１図（ｃ）は第１図（ｂ）のＩ−
Ｉ線断面図である。FIG. 1 (a) is a perspective view showing one embodiment of a wafer holder of the present invention, FIG. 1 (b) is a perspective view showing a state in which a wafer is placed on this embodiment, and FIG. I- in Fig. 1 (b)
It is an I line sectional view.
この実施例は、ウェーハホルダ本体6a上に保持部Ｈであ
る馬蹄形板状体14を設け、この板状体14上に周辺に沿っ
て複数個、この例では４個のウェーハ移動防止突起15を
設けてなるものである。In this embodiment, a horseshoe-shaped plate-like body 14 that is a holding portion H is provided on the wafer holder body 6a, and a plurality of wafer movement preventing projections 15, four in this example, are provided on the plate-like body 14 along the periphery. It is provided.
ウェーハ２は馬蹄形板状体14上に載置され、４個のウェ
ーハ移動防止突起15によりその移動が阻止される。ウェ
ーハ搬送アーム４の真空吸着部4aは馬蹄形板状体14の厚
さより薄くなっているため、馬蹄形板状体14の開口部14
aより入出して上下動でき、ウェーハ２の自動搬送に支
障をきたす恐れはない。The wafer 2 is placed on the horseshoe plate 14 and its movement is blocked by the four wafer movement preventing projections 15. Since the vacuum suction part 4a of the wafer transfer arm 4 is thinner than the thickness of the horseshoe-shaped plate-shaped body 14, the opening 14 of the horseshoe-shaped plate-shaped body 14 is formed.
It can be moved in and out from a, and there is no danger of disturbing the automatic transfer of the wafer 2.
また、ウェーハ２を載置する馬蹄形板状体14に段差がな
いため、反応ガスの流れが均一になり、ウェーハ２の全
体の膜厚均一性は上記第２表No.3に示すように±２〜３
％となってウェーハホルダ６にウェーハ２を密着させた
場合の第２表No.1と比較し遜色がない。Further, since there is no step in the horseshoe plate 14 on which the wafer 2 is placed, the flow of the reaction gas becomes uniform, and the film thickness uniformity of the entire wafer 2 is ± as shown in Table 2 No. 3 above. 2-3
%, Which is comparable to No. 1 in Table 2 when the wafer 2 is closely attached to the wafer holder 6.
なお、第３図に示したウェーハ搬送機構について捕捉し
ておく。The wafer transfer mechanism shown in FIG. 3 will be captured.
石英製の円板形ウェーハホルダ６は縦形石英製ウェーハ
ボルド５上に約1.1°の角度をもって保持される。これ
は石英ボート５を回転させた時にウェーハ２が動かない
ために必要な角度である。The quartz disk-shaped wafer holder 6 is held on the vertical quartz wafer holder 5 at an angle of about 1.1 °. This is an angle necessary for the wafer 2 not to move when the quartz boat 5 is rotated.
ウェーハ立替機３の搬送アーム４はカセット１よりウェ
ーハ２を吸着して取り出した後、90°回転してボート５
上に位置された石英製ウェーハホルダ６上に搬送され
る。ホルダ６上部にウェーハ２がくると搬送アーム４は
下降してウェーハ２をホルダ６に密着させる。同時に真
空吸着部4aによる吸着が解除されてウェーハ２はホルダ
６上に載せられる。搬送アーム４は更に下降し次いでア
ーム４を縮めて次のウェーハ２の搬送の準備をする。The transfer arm 4 of the wafer sorter 3 sucks the wafer 2 from the cassette 1 and takes it out, and then it rotates 90 ° and the boat 5 moves.
The wafer is transferred onto the quartz wafer holder 6 located above. When the wafer 2 reaches the upper part of the holder 6, the transfer arm 4 descends to bring the wafer 2 into close contact with the holder 6. At the same time, the suction by the vacuum suction unit 4a is released and the wafer 2 is placed on the holder 6. The transfer arm 4 further descends, and then the arm 4 is retracted to prepare for the next transfer of the wafer 2.
上述より理解されるように本考案によれば、ウェーハ搬
送アーム４の真空吸着部4aによって吸着されてくるウェ
ーハ２を吸着解除してウェーハホルダ６上に支障なく載
置でき、またウェーハホルダ６上のウェーハ２を支障な
く吸着して搬送できるので、ウェーハ２の自動搬送に支
障をきたす恐れがないばかりでなく、本考案ウェーハホ
ルダを用いることにより均一な膜厚分布を持ったCVD膜
を得ることができ、かつウェーハ２の全体の膜厚均一性
をウェーハホルダ６にウェーハ２を密着させて場合と遜
色なくでき、従来例よりも向上できる。As can be understood from the above, according to the present invention, the wafer 2 that is sucked by the vacuum suction portion 4a of the wafer transfer arm 4 can be released from the suction and placed on the wafer holder 6 without any trouble. Since the wafer 2 can be adsorbed and transferred without any trouble, there is no fear that it will interfere with the automatic transfer of the wafer 2, and by using the wafer holder of the present invention, a CVD film having a uniform film thickness distribution can be obtained. In addition, the film thickness uniformity of the entire wafer 2 can be made comparable to the case where the wafer 2 is closely attached to the wafer holder 6, and can be improved as compared with the conventional example.
第１図（ａ）は本考案ウェーハホルダの１実施例を示す
斜視図、第１図（ｂ）は本実施例にウェーハを載置した
状態を示す斜視図、第１図（ｃ）は第１図（ｂ）のＩ−
Ｉ線断面図、第２図（ａ）は従来ウェーハホルダの１例
を示す斜視図、第２図（ｂ）は第２図（ａ）のIV−IV線
断面図、第３図は縦形CVD装置のウェーハ搬送機構の１
例を示す斜視図、第４図は第３図で使用するウェーハ搬
送アームの斜視図である。 ２……ウェーハ、４……ウェーハ搬送アーム、4a……真
空吸着部、６……石英製ウェーハホルダ、6a……ウェー
ハホルダ本体、7a……段差、14……馬蹄形板状体、14a
……開口部、15……ウェーハ移動防止突起。FIG. 1 (a) is a perspective view showing one embodiment of a wafer holder of the present invention, FIG. 1 (b) is a perspective view showing a state in which a wafer is placed on this embodiment, and FIG. I- in Fig. 1 (b)
A sectional view taken along line I, FIG. 2A is a perspective view showing an example of a conventional wafer holder, FIG. 2B is a sectional view taken along line IV-IV in FIG. 2A, and FIG. 1 of wafer transfer mechanism of equipment
FIG. 4 is a perspective view showing an example, and FIG. 4 is a perspective view of the wafer transfer arm used in FIG. 2 ... Wafer, 4 ... Wafer transfer arm, 4a ... Vacuum suction part, 6 ... Quartz wafer holder, 6a ... Wafer holder body, 7a ... Step, 14 ... Horseshoe plate, 14a
…… Aperture, 15 …… Wafer movement prevention protrusion.
Claims (1)
ープポリシリコン膜等を生成するのに用い、円形で材質
が石英製のウェーハホルダにおいて、ウェーハホルダ本
体上に馬蹄形板状体を設け、この板状体に沿って複数
個、ウェーハ移動防止突起を設けたことを特徴とする縦
型CVD装置用石英製ウェーハホルダ。1. A circular wafer holder made of quartz and used for producing an LTO film, a PSG film, an HTO film, a doped polysilicon film, etc. on the surface of a wafer, and a horseshoe-shaped plate-shaped body on the wafer holder body. And a plurality of wafer movement preventing protrusions are provided along the plate-like body, and a quartz wafer holder for a vertical CVD apparatus is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6652787U JPH0635467Y2 (en) | 1987-04-30 | 1987-04-30 | Quartz wafer holder for vertical CVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6652787U JPH0635467Y2 (en) | 1987-04-30 | 1987-04-30 | Quartz wafer holder for vertical CVD equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63177035U JPS63177035U (en) | 1988-11-16 |
| JPH0635467Y2 true JPH0635467Y2 (en) | 1994-09-14 |
Family
ID=30904615
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6652787U Expired - Lifetime JPH0635467Y2 (en) | 1987-04-30 | 1987-04-30 | Quartz wafer holder for vertical CVD equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0635467Y2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5584936A (en) * | 1995-12-14 | 1996-12-17 | Cvd, Incorporated | Susceptor for semiconductor wafer processing |
| TWI327339B (en) * | 2005-07-29 | 2010-07-11 | Nuflare Technology Inc | Vapor phase growing apparatus and vapor phase growing method |
| JP2010258288A (en) * | 2009-04-27 | 2010-11-11 | Sanyo Electric Co Ltd | Fixture, and method of manufacturing semiconductor device using the same |
| JP2014060403A (en) * | 2013-09-24 | 2014-04-03 | Kokusai Electric Semiconductor Service Inc | Substrate holder and wafer support method |
-
1987
- 1987-04-30 JP JP6652787U patent/JPH0635467Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63177035U (en) | 1988-11-16 |
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