JPH06342768A - Ecr surface treating apparatus and desicharge starting method thereof - Google Patents
Ecr surface treating apparatus and desicharge starting method thereofInfo
- Publication number
- JPH06342768A JPH06342768A JP13207393A JP13207393A JPH06342768A JP H06342768 A JPH06342768 A JP H06342768A JP 13207393 A JP13207393 A JP 13207393A JP 13207393 A JP13207393 A JP 13207393A JP H06342768 A JPH06342768 A JP H06342768A
- Authority
- JP
- Japan
- Prior art keywords
- discharge
- ecr
- discharge chamber
- surface treatment
- treatment apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、半導体ウエハー（基
板とも言う）の表面のエッチングや、薄膜形成に使用さ
れているＥＣＲ表面処理装置とその放電開始方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ECR surface treatment apparatus used for etching the surface of a semiconductor wafer (also referred to as a substrate) and for forming a thin film, and a discharge starting method therefor.
【０００２】[0002]
【従来の技術】従来、ＥＣＲイオン源を備えたＥＣＲ表
面処理装置はプラズマを形成する放電室に、基板搬送機
構等を設置した処理室を連設し（いずれの部屋も真空に
排気可能である）、前記放電室に対して、マイクロ波
（２．４５ＧＨZ ）を投入すると共に、磁界（８７５ガ
ウス）を印加して、放電室に導入したガスを放電させ、
この放電によって形成されるプラズマを介して、基板表
面のエッチングや薄膜形成が行なわれている。2. Description of the Related Art Conventionally, in an ECR surface treatment apparatus equipped with an ECR ion source, a discharge chamber for forming plasma is connected to a treatment chamber in which a substrate transfer mechanism is installed (both chambers can be evacuated to vacuum). ), to the discharge chamber, with turning on the microwave (2.45 GHz Z), by applying a magnetic field (875 gauss), to discharge the gas introduced into the discharge chamber,
The plasma or the thin film is formed on the substrate surface through the plasma formed by this discharge.
【０００３】このＥＣＲ表面処理装置は、低い圧力（例
えば２×１０-4 Torr ＝２．７×１０-2 Pa ）でも放電
が可能であることから、特に半導体デバイスの製造に多
用されている。This ECR surface treatment apparatus is widely used particularly in the manufacture of semiconductor devices because it can discharge even at a low pressure (for example, 2 × 10 -4 Torr = 2.7 × 10 -2 Pa).
【０００４】[0004]
【発明が解決しようとする課題】前記のＥＣＲ表面処理
装置で半導体ウエハーの表面処理を行うに当り、半導体
ウエハーの表面を、イオンや電子などの荷電粒子による
衝撃から保護する必要がある場合には、前記放電室に投
入するマイクロ波の出力を低くすることになるが、マイ
クロ波の出力を低く（約３００Ｗ以下）した場合、放電
室での放電が開始し難くなる問題点があった。When it is necessary to protect the surface of a semiconductor wafer from the impact of charged particles such as ions and electrons when the surface treatment of a semiconductor wafer is performed by the above ECR surface processing apparatus, The output of microwaves to be introduced into the discharge chamber is reduced, but when the output of microwaves is reduced (about 300 W or less), it is difficult to start discharge in the discharge chamber.
【０００５】この為、放電開始時の短時間（数１０秒
間）にはマイクロ波の出力を高くし、放電開始後にマイ
クロ波の出力を低くする方法が採られる場合もあった
が、短時間といえどもマイクロ波のエネルギーが高くな
るので、半導体ウエハーの表面に荷電粒子によるダメー
ジを与える欠点を避けることができなかった。For this reason, a method of increasing the microwave output during a short time (several tens of seconds) at the start of discharge and lowering the microwave output after the start of discharge has been used in some cases. However, since the microwave energy becomes high, the drawback of damaging the surface of the semiconductor wafer by charged particles cannot be avoided.
【０００６】[0006]
【課題を解決する為の手段】この発明は前記の如くの問
題点に鑑みてなされたもので、放電室に投入するマイク
ロ波の出力が低い場合にも、容易に放電を開始できるＥ
ＣＲ表面処理装置とその放電開始方法を提供することを
目的としている。The present invention has been made in view of the above-mentioned problems, and discharge can be easily started even when the output of the microwaves introduced into the discharge chamber is low.
It is an object of the present invention to provide a CR surface treatment apparatus and a discharge starting method thereof.
【０００７】斯る目的を達成するこの発明のＥＣＲ表面
処理装置は、ＥＣＲ形イオン源を備えたＥＣＲ表面処理
装置において、放電室に熱電子供給手段を備えたことを
特徴としている。The ECR surface treatment apparatus of the present invention which achieves the above object is characterized in that the discharge chamber is provided with thermionic supply means in the ECR surface treatment apparatus provided with the ECR type ion source.
【０００８】前記熱電子供給手段は、紫外線ランプ、赤
外線ランプ又は電子銃とすることができる。このような
熱電子供給手段は、放電室内に構成されたＥＣＲイオン
源の共鳴点に向けて設置することが望ましい。The thermoelectron supplying means may be an ultraviolet lamp, an infrared lamp or an electron gun. It is desirable to install such a thermoelectron supply unit toward the resonance point of the ECR ion source configured in the discharge chamber.
【０００９】また、この発明のＥＣＲ表面処理装置の放
電開始方法は、ＥＣＲイオン源を備えたＥＣＲ表面処理
装置に、放電用ガスを導入すると共に、マイクロ波投入
および磁界印加を行い、放電室で放電を開始させる方法
において、前記マイクロ波投入および磁界印加の初期
に、放電室内に紫外線、赤外線又は電子線を照射するこ
とを特徴としている。Further, according to the discharge starting method of the ECR surface treatment apparatus of the present invention, the discharge gas is introduced into the ECR surface treatment apparatus equipped with the ECR ion source, and the microwave is applied and the magnetic field is applied to the discharge chamber. The method of starting discharge is characterized by irradiating the discharge chamber with ultraviolet rays, infrared rays or electron beams at the initial stage of the microwave application and the magnetic field application.
【００１０】[0010]
【作用】この発明のＥＣＲ表面処理装置において、マイ
クロ波の投入および磁界の印加の際に、紫外線ランプ、
赤外線ランプ又は電子銃で構成された熱電子供給手段を
介して、放電室内に紫外線、赤外線又は電子線を照射す
ると、放電室内のガス分子が紫外線等の照射エネルギー
を受けて電離し、熱電子を生ずる。この熱電子も放電室
内においてサイクロトロン運動をするので、ＥＣＲ放電
の開始を助けることができる。従って放電開始初期に紫
外線等を照射することで、マイクロ波の出力を低くした
場合でも、ＥＣＲ放電を容易に起すことが可能となる。In the ECR surface treatment apparatus of the present invention, an ultraviolet lamp,
When the discharge chamber is irradiated with ultraviolet rays, infrared rays, or an electron beam through a thermoelectron supply unit composed of an infrared lamp or an electron gun, gas molecules in the discharge chamber receive irradiation energy such as ultraviolet rays and are ionized to generate thermoelectrons. Occurs. Since these thermoelectrons also make cyclotron motion in the discharge chamber, they can help start the ECR discharge. Therefore, by irradiating ultraviolet rays or the like at the initial stage of discharge initiation, it becomes possible to easily cause ECR discharge even when the microwave output is lowered.
【００１１】[0011]
【実施例】以下、この発明の実施例を図を参照して説明
する。図１は、実施例のＥＣＲ表面処理装置で、真空容
器で構成された放電室１と処理室２を備えている。放電
室１は石英窓３を通して、導波管４で導かれたマイクロ
波が投入可能としてあると共に、外側には電磁コイル５
が設置されて、内部に磁界を印加できるようにしてあ
り、ＥＣＲ形イオン源が構成されている。また、処理室
２側には、基板搬送機構が設置され（図示していな
い）、基板搬送機構で移動する基板ホルダー６上に、基
板７を支持するようにしてある。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows an ECR surface treatment apparatus according to an embodiment, which includes a discharge chamber 1 and a treatment chamber 2 which are vacuum chambers. The microwave guided by the waveguide 4 can be introduced into the discharge chamber 1 through the quartz window 3, and the electromagnetic coil 5 is provided outside.
Is installed so that a magnetic field can be applied inside, and an ECR type ion source is configured. A substrate transfer mechanism (not shown) is installed on the processing chamber 2 side, and the substrate 7 is supported on the substrate holder 6 which is moved by the substrate transfer mechanism.
【００１２】前記放電室１の一側には、石英窓８を備え
たポート９が設けてあり、石英窓８の外側には紫外線ラ
ンプ１０（例えば浜松ホトニクス製、Ｌ２１８７）が設
置してある。A port 9 having a quartz window 8 is provided on one side of the discharge chamber 1, and an ultraviolet lamp 10 (for example, L2187 manufactured by Hamamatsu Photonics) is provided outside the quartz window 8.
【００１３】図１において、１１は放電室１に接続した
ガス導入系、１２は処理室２に接続した真空排気系であ
る。In FIG. 1, 11 is a gas introduction system connected to the discharge chamber 1, and 12 is a vacuum exhaust system connected to the processing chamber 2.
【００１４】上記実施例のＥＣＲ表面処理装置におい
て、放電室１でＥＣＲ放電を起し、基板７の表面処理
（エッチング、薄膜形成等）を行う場合には、放電室１
および処理室２を真空排気系１２で真空排気した後、ガ
ス導入系１１を通して所定の放電ガスを導入して放電室
１内を所定圧力の定常状態に維持し、石英窓３を通して
マイクロ波を投入すると共に、電磁コイル５を介して磁
界を印加する。In the ECR surface treatment apparatus of the above embodiment, when the ECR discharge is generated in the discharge chamber 1 to perform the surface treatment (etching, thin film formation, etc.) of the substrate 7, the discharge chamber 1
After the processing chamber 2 is evacuated by the vacuum exhaust system 12, a predetermined discharge gas is introduced through the gas introduction system 11 to maintain the discharge chamber 1 in a steady state of a predetermined pressure, and a microwave is input through the quartz window 3. At the same time, a magnetic field is applied via the electromagnetic coil 5.
【００１５】この場合、投入されるマイクロ波の電力が
低い場合には、ＥＣＲ放電の開始が難しかったものであ
るが、放電開始の際に、紫外線ランプ１０を数秒間起動
させて、紫外線１３を放電室１内の放電空間に照射す
る。In this case, it was difficult to start the ECR discharge when the electric power of the input microwave is low, but at the start of the discharge, the ultraviolet lamp 10 is activated for several seconds to emit the ultraviolet light 13. The discharge space in the discharge chamber 1 is irradiated.
【００１６】図２は前記の動作を示すタイムチャート
で、ａが紫外線ランプ１０の動作、ｂがマイクロ波と磁
界による放電条件の動作を表わしている。FIG. 2 is a time chart showing the above-mentioned operation, in which "a" shows the operation of the ultraviolet lamp 10 and "b" shows the operation under the discharge condition by the microwave and the magnetic field.
【００１７】前記のように、放電開始の初期に、放電室
１内に紫外線１３を照射すると、放電室１内の放電ガス
分子が紫外線１３のエネルギーを受けて電離し、熱電子
を生ずるので、この熱電子を起爆剤としてＥＣＲ放電を
容易に起すことができる。As described above, when the discharge chamber 1 is irradiated with the ultraviolet rays 13 at the beginning of the discharge, the discharge gas molecules in the discharge chamber 1 receive the energy of the ultraviolet rays 13 and are ionized to generate thermoelectrons. ECR discharge can be easily caused by using these thermoelectrons as an initiator.
【００１８】前記ＥＣＲ放電によるプラズマは、磁界が
８７５ガウスのいわゆる共鳴点でＥＣＲ放電を起し、こ
れが拡大することから、前記紫外線ランプ１０の紫外線
１３は、前記共鳴点に向けて照射するようにすれば、起
爆の効率を良くすることができる。The plasma generated by the ECR discharge causes an ECR discharge at a so-called resonance point having a magnetic field of 875 Gauss, and the ECR discharge expands, so that the ultraviolet rays 13 of the ultraviolet lamp 10 irradiate toward the resonance point. If so, the efficiency of detonation can be improved.
【００１９】紫外線１３の波長や、照射時間は、放電ガ
スの電離効率を考慮して決定することになるもので、波
長は１６０ nm 以上、照射時間は数秒間乃至１０数秒間
の間で決定すると良い。半導体ウエハーである基板７
は、長時間の紫外線照射でダメージを受ける場合もある
ので、可能な限り短い時間とすることが望ましい。The wavelength of the ultraviolet rays 13 and the irradiation time are determined in consideration of the ionization efficiency of the discharge gas. The wavelength is 160 nm or more, and the irradiation time is determined within the range of several seconds to several tens of seconds. good. Substrate 7 which is a semiconductor wafer
May be damaged by UV irradiation for a long time, so it is desirable that the time be as short as possible.
【００２０】上記の実施例ではポート９の外側に紫外線
ランプ１０を設置して、紫外線によって放電ガスの電離
を起させたが、紫外線ランプ１０に代えて赤外線ランプ
を設置し、赤外線のエネルギーで放電ガスの電離を起す
ようにすることもできる。In the above-mentioned embodiment, the ultraviolet lamp 10 is installed outside the port 9 and the discharge gas is ionized by the ultraviolet rays. However, instead of the ultraviolet lamp 10, an infrared lamp is installed and the infrared energy is used for the discharge. It is also possible to cause the ionization of gas.
【００２１】また、図３のように、ポート９の内側に電
子銃１４を設置し、電子銃１４からＥＣＲ共鳴点に向け
て電子線を照射して放電ガスの電離を起すようにするこ
ともできる。Further, as shown in FIG. 3, an electron gun 14 may be installed inside the port 9, and an electron beam may be emitted from the electron gun 14 toward the ECR resonance point to cause ionization of the discharge gas. it can.
【００２２】[0022]
【発明の効果】以上に説明した通り、この発明によれ
ば、マイクロ波の投入電力が低くても、容易に放電を開
始できる効果がある。また、マイクロ波の一時的な電力
増大を不要にできるので、基板の処理をダメージなく行
なえる効果がある。As described above, according to the present invention, there is an effect that the discharge can be easily started even when the microwave input power is low. Further, since it is not necessary to temporarily increase the electric power of the microwave, there is an effect that the substrate can be processed without damage.
【図１】この発明の実施例の構成図である。FIG. 1 is a configuration diagram of an embodiment of the present invention.
【図２】同じく実施例のタイムチャートである。FIG. 2 is a time chart of the same example.
【図３】この発明の他の実施例の構成図である。FIG. 3 is a configuration diagram of another embodiment of the present invention.
１ 放電室 ２ 処理室 ３ 石英窓 ４ 導波管 ５ 電磁コイル ６ 基板ホルダー ７ 基板 ８ 石英窓 ９ ポート １０ 紫外線 １１ ガス導入系 １２ 真空排気系 １３ 紫外線 １４ 電子銃 DESCRIPTION OF SYMBOLS 1 Discharge chamber 2 Processing chamber 3 Quartz window 4 Waveguide 5 Electromagnetic coil 6 Substrate holder 7 Substrate 8 Quartz window 9 Port 10 Ultraviolet 11 Gas introduction system 12 Vacuum exhaust system 13 Ultraviolet 14 Electron gun
Claims (6)
理装置において、放電室に熱電子供給手段を備えたこと
を特徴とするＥＣＲ表面処理装置。1. An ECR surface treatment apparatus provided with an ECR type ion source, wherein the discharge chamber is provided with a thermoelectron supply means.
線ランプ又は電子銃とした請求項１記載のＥＣＲ表面処
理装置。2. The ECR surface treatment apparatus according to claim 1, wherein the thermoelectron supply means is an ultraviolet lamp, an infrared lamp or an electron gun.
たＥＣＲイオン源の共鳴点に向けた請求項１又は２記載
のＥＣＲ表面処理装置。3. The ECR surface treatment apparatus according to claim 1, wherein the thermoelectron supplying means is directed to a resonance point of an ECR ion source formed in the discharge chamber.
装置に、放電用ガスを導入すると共に、マイクロ波投入
および磁界印加を行い、放電室で放電を開始させる方法
において、前記マイクロ波投入および磁界印加の初期
に、放電室内に紫外線を照射することを特徴とするＥＣ
Ｒ表面処理装置の放電開始方法。4. A method of introducing a discharge gas into an ECR surface treatment apparatus equipped with an ECR ion source, applying microwaves and applying a magnetic field to start discharge in the discharge chamber, wherein the microwave application and the magnetic field are applied. EC characterized by irradiating the discharge chamber with ultraviolet rays at the initial stage of application
Method of starting discharge of R surface treatment apparatus.
装置に、放電用ガスを導入すると共に、マイクロ波投入
および磁界印加を行い、放電室で放電を開始させる方法
において、前記マイクロ波投入および磁界印加の初期
に、放電室内に赤外線を照射することを特徴とするＥＣ
Ｒ表面処理装置の放電開始方法。5. A method of introducing a discharge gas into an ECR surface treatment apparatus equipped with an ECR ion source, applying microwaves and applying a magnetic field to start discharge in the discharge chamber, wherein the microwave injection and magnetic field are applied. EC characterized by irradiating infrared rays into the discharge chamber at the initial stage of application
Method of starting discharge of R surface treatment apparatus.
装置に、放電用ガスを導入すると共に、マイクロ波投入
および磁界印加を行い、放電室で放電を開始させる方法
において、前記マイクロ波投入および磁界印加の初期
に、放電室内に電子線を照射することを特徴とするＥＣ
Ｒ表面処理装置の放電開始方法。6. A method of introducing a discharge gas into an ECR surface treatment apparatus equipped with an ECR ion source, applying a microwave and applying a magnetic field to start discharge in the discharge chamber, wherein the microwave application and the magnetic field are performed. EC characterized by irradiating an electron beam into the discharge chamber at the initial stage of application
Method of starting discharge of R surface treatment apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13207393A JPH06342768A (en) | 1993-06-02 | 1993-06-02 | Ecr surface treating apparatus and desicharge starting method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13207393A JPH06342768A (en) | 1993-06-02 | 1993-06-02 | Ecr surface treating apparatus and desicharge starting method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06342768A true JPH06342768A (en) | 1994-12-13 |
Family
ID=15072885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13207393A Pending JPH06342768A (en) | 1993-06-02 | 1993-06-02 | Ecr surface treating apparatus and desicharge starting method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06342768A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002080254A1 (en) * | 2001-03-28 | 2002-10-10 | Tokyo Electron Limited | Microwave plasma process device, plasma ignition method, plasma forming method, and plasma process method |
-
1993
- 1993-06-02 JP JP13207393A patent/JPH06342768A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002080254A1 (en) * | 2001-03-28 | 2002-10-10 | Tokyo Electron Limited | Microwave plasma process device, plasma ignition method, plasma forming method, and plasma process method |
| EP1376668A1 (en) * | 2001-03-28 | 2004-01-02 | Tokyo Electron Limited | Microwave plasma process device, plasma ignition method, plasma forming method, and plasma process method |
| EP1376668A4 (en) * | 2001-03-28 | 2006-02-15 | Tokyo Electron Ltd | Microwave plasma process device, plasma ignition method, plasma forming method, and plasma process method |
| US7141756B2 (en) | 2001-03-28 | 2006-11-28 | Tokyo Electron Limited | Microwave plasma processing apparatus, plasma ignition method, plasma forming method, and plasma processing method |
| CN1311531C (en) * | 2001-03-28 | 2007-04-18 | 东京毅力科创株式会社 | Microwave plasma process device, plasma ignition method, plasma forming method, and plasma process method |
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