JPH06318731A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- JPH06318731A JPH06318731A JP22177293A JP22177293A JPH06318731A JP H06318731 A JPH06318731 A JP H06318731A JP 22177293 A JP22177293 A JP 22177293A JP 22177293 A JP22177293 A JP 22177293A JP H06318731 A JPH06318731 A JP H06318731A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- light emitting
- conductivity type
- light
- type layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、ＰＮ接合近傍で発生
した光を効率良く外部に取り出すことができ、かつ、容
易に実装できる半導体発光装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device capable of efficiently extracting light generated in the vicinity of a PN junction to the outside and easily mounting it.
【０００２】[0002]
【従来の技術】従来、この種の半導体発光装置として
は、図６に示すものがある。この半導体発光装置６０
は、次のようにして作製される。即ち、Ｎ型基板６１上
に、エピタキシャル成長法によってＮ型半導体部６２,
Ｐ型半導体部６３を順に形成し、次に、上記Ｎ型基板６
１の表面全体およびＰ型半導体部６３の表面の必要部分
に、オーミックコンタクト用金属材料を付着させてＮ電
極６４とＰ電極６５を形成する。次に、ダイシングソー
やスクライブマシンによってチップ化する。2. Description of the Related Art A conventional semiconductor light emitting device of this type is shown in FIG. This semiconductor light emitting device 60
Is produced as follows. That is, on the N-type substrate 61, the N-type semiconductor portion 62,
The P-type semiconductor portion 63 is sequentially formed, and then the N-type substrate 6 is formed.
The N electrode 64 and the P electrode 65 are formed by attaching a metal material for ohmic contact to the entire surface of 1 and a necessary portion of the surface of the P-type semiconductor portion 63. Next, it is made into chips by a dicing saw or a scribe machine.
【０００３】上記半導体発光装置６０の実装例を図７に
示す。上記半導体発光装置のＮ電極６４は、銀ペースト
等の導電性ペースト６６でリードフレーム６７にダイボ
ンドされている。また、上記半導体発光装置のＰ電極６
５は、リード線６８でリードフレーム７０に接続されて
いる。そして、図７に示すように、上記半導体発光装置
６０の全体を被う透光性樹脂６９によるモールドがなさ
れている。An example of mounting the semiconductor light emitting device 60 is shown in FIG. The N electrode 64 of the semiconductor light emitting device is die-bonded to the lead frame 67 with a conductive paste 66 such as silver paste. In addition, the P electrode 6 of the semiconductor light emitting device
5 is connected to a lead frame 70 by a lead wire 68. Then, as shown in FIG. 7, the semiconductor light emitting device 60 is molded with a translucent resin 69 that covers the entire semiconductor light emitting device 60.
【０００４】上記半導体発光装置６０は、上記Ｐ電極６
５とＮ電極６４に電圧が印加されると、上記Ｎ型半導体
部６２と上記Ｐ型半導体部６３とのＰＮ接合面近傍から
光を発生し、この光を上記Ｐ型半導体部６３のＰ電極６
５側の光出射面６３ａから取り出すようにしている。The semiconductor light emitting device 60 includes the P electrode 6
5 and the N electrode 64 are applied with voltage, light is generated from the vicinity of the PN junction surface between the N-type semiconductor portion 62 and the P-type semiconductor portion 63, and this light is emitted from the P electrode of the P-type semiconductor portion 63. 6
The light is emitted from the light exit surface 63a on the fifth side.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、上記従
来の半導体発光装置は、以下に述べるような種々の欠点
がある。However, the above-described conventional semiconductor light emitting device has various drawbacks as described below.
【０００６】（１） 半導体発光装置６０をリードフレ
ームに実装する時に、Ｎ電極６４を下にしてＮ電極６４
をリードフレーム６７にダイボンドする工程と、上方の
Ｐ電極６５をリード線６８でリードフレーム６７に接続
する工程とが不可欠であるから、実装工数が大きい。(1) When the semiconductor light emitting device 60 is mounted on a lead frame, the N electrode 64 is placed downwards.
Since the step of die-bonding the lead electrode 67 to the lead frame 67 and the step of connecting the upper P electrode 65 to the lead frame 67 by the lead wire 68 are indispensable, the number of mounting steps is large.
【０００７】（２） 上面のＰ電極６５が発光光の遮光
面となって光を遮えぎるので、光出射効率が悪い。(2) Since the P electrode 65 on the upper surface serves as a light shielding surface for the emitted light and blocks the light, the light emitting efficiency is poor.
【０００８】（３） ＰＮ接合と平行方向に進行する光
が、上記ＰＮ接合面に対して垂直な端面から、横方向に
透過してしまうので、その分だけ光出射面６３ａから出
射する光が減少し、光出射効率が低下する。(3) Since the light traveling in the direction parallel to the PN junction is transmitted in the lateral direction from the end face perpendicular to the PN junction surface, the light emitted from the light emitting surface 63a is correspondingly emitted. The light emission efficiency is reduced.
【０００９】（４） 上記半導体発光装置のＰ型半導体
部６３は、たとえば、ＧａＰ,ＧａＡｓ,ＧａＡｌＡｓ,
ＧａＡｓＰ他で構成されており、その屈折率ｎが約３．
５であるから、上記Ｐ型半導体部６３の光出射面６３ａ
での反射率Ｒは、空気に対しては約３０％になり、エポ
キシ樹脂に対しては約１６％になる。このため、発光光
の一部が、上記光出射面６３ａで内側に反射し、内部に
閉じ込められるので、光出射効率が低下する。尚、上記
反射率Ｒの値は、光の進行方向が界面に垂直な場合のフ
レネルの式Ｒ＝(ｎ1−ｎ2）2／(ｎ1＋ｎ2）2より求め
た。(4) The P-type semiconductor portion 63 of the semiconductor light emitting device is made of, for example, GaP, GaAs, GaAlAs,
It is composed of GaAsP and the like, and its refractive index n is about 3.
5, the light emitting surface 63a of the P-type semiconductor portion 63 is
The reflectance R is about 30% for air and about 16% for epoxy resin. Therefore, a part of the emitted light is reflected inward by the light emitting surface 63a and is confined inside, so that the light emitting efficiency is reduced. The value of the reflectance R was obtained from the Fresnel equation R = (n 1 −n 2 ) 2 / (n 1 + n 2 ) 2 when the light traveling direction was perpendicular to the interface.
【００１０】（５） Ｎ型基板６１と銀ペーストとの界
面反射率は約５０％であるから、図７に示すように、上
記半導体発光装置６０を銀ペーストからなる導電性ペー
スト６６を用いてリードフレーム６７に実装した場合、
Ｎ型基板６１と銀ペーストとの界面に向かって進行した
発光光の約５０％が、上記界面から銀ペーストに吸収さ
れてしまう。(5) Since the interface reflectance between the N-type substrate 61 and the silver paste is about 50%, as shown in FIG. 7, the semiconductor light emitting device 60 is formed by using the conductive paste 66 made of silver paste. When mounted on the lead frame 67,
About 50% of the emitted light traveling toward the interface between the N-type substrate 61 and the silver paste is absorbed by the silver paste through the interface.
【００１１】そこで、この発明の目的は、上記(１)〜
(５)の欠点を解消でき、光出射効率を向上させることが
でき、かつ、実装が容易な半導体発光装置を提供するこ
とにある。Therefore, an object of the present invention is to provide the above (1) to
An object of the present invention is to provide a semiconductor light emitting device which can solve the drawback of (5), improve the light emission efficiency, and can be easily mounted.
【００１２】[0012]
【課題を解決するための手段】上記目的を達成するた
め、請求項１の半導体発光装置は、第１導電型層と第２
導電型層との接合面近傍から光を発生させる半導体発光
装置において、上記接合面に対向する上記第１導電型層
の対向面または上記接合面に対向する上記第２導電型層
の対向面の一方から、上記接合面を貫通し、上記第２導
電型層または第１導電型層に達する溝と、上記第１導電
型層の対向面または第２導電型層の対向面の一方に、上
記溝を挟んで設けられた正電極および負電極と、上記正
電極および負電極に設けられた突起電極とを備え、上記
接合面近傍で発生し、上記第１導電型層の対向面または
第２導電型層の対向面の他方を通過した光を外部に取り
出すようにしたことを特徴としている。In order to achieve the above object, a semiconductor light emitting device according to claim 1 has a first conductivity type layer and a second conductivity type layer.
In a semiconductor light-emitting device that emits light from the vicinity of a joint surface with a conductive type layer, an opposing surface of the first conductive type layer facing the bonding surface or an opposing surface of the second conductive type layer facing the bonding surface. From one side, a groove penetrating the bonding surface and reaching the second conductivity type layer or the first conductivity type layer, and one of the facing surface of the first conductivity type layer or the facing surface of the second conductivity type layer, A positive electrode and a negative electrode provided with a groove sandwiched between them, and a protruding electrode provided on the positive electrode and the negative electrode, which are generated in the vicinity of the joint surface and which face the first conductivity type layer or the second surface. The feature is that the light passing through the other of the facing surfaces of the conductive type layer is extracted to the outside.
【００１３】また、請求項２の半導体発光装置は、請求
項１に記載の半導体発光装置において、上記溝が上記溝
の底面に向かって先細になるように、上記溝の側面を上
記接合面に対して傾斜面にし、上記接合面近傍で発生し
て上記接合面に略平行に進行する光を、上記傾斜面で反
射して、上記他方の対向面に向かわせるようにしたこと
を特徴としている。A semiconductor light emitting device according to a second aspect is the semiconductor light emitting device according to the first aspect, wherein the side surface of the groove is the joining surface so that the groove tapers toward a bottom surface of the groove. On the other hand, an inclined surface is provided, and light generated in the vicinity of the joint surface and traveling substantially parallel to the joint surface is reflected by the slant surface and directed toward the other facing surface. .
【００１４】また、請求項３の半導体発光装置は、請求
項１または２に記載の半導体発光装置において、発光し
た光を外部に取り出すための光出射面に反射防止膜を形
成したことを特徴としている。A semiconductor light emitting device according to a third aspect is the semiconductor light emitting device according to the first or second aspect, characterized in that an antireflection film is formed on a light emitting surface for taking out the emitted light to the outside. There is.
【００１５】また、請求項４の半導体発光装置は、請求
項１乃至３のいずれか１つに記載の半導体発光装置にお
いて、上記一方の対向面または上記溝の側面の少なくと
も一方に、反射膜を設け、上記一方の対向面に向かう光
または上記溝の側面に向かう光の少なくとも一方を、上
記反射膜で反射して上記他方の対向面に向かわせるよう
にしたことを特徴としている。A semiconductor light emitting device according to a fourth aspect is the semiconductor light emitting device according to any one of the first to third aspects, in which at least one of the facing surface and the side surface of the groove is provided with a reflective film. It is characterized in that at least one of the light directed to the one opposing surface and the light directed to the side surface of the groove is reflected by the reflective film and directed to the other opposing surface.
【００１６】また、請求項５の半導体発光装置は、第１
導電型層と第２導電型層との接合面近傍から光を発生さ
せる半導体発光装置において、上記接合面に対向する上
記第１導電型層の対向面または上記接合面に対向する上
記第２導電型層の対向面の一方から、上記接合面を貫通
し、上記第２導電型層または第１導電型層に達する溝
と、上記溝底面に形成され、上記溝の側面との間に所定
の間隔を隔てて上記接合面を横切る第２導電型または第
１導電型の凸部と、上記第１導電型層の対向面または第
２導電型層の対向面の一方と、上記凸部の上面とに、上
記溝の側面と凸部との間の空間を挟んで設けられた正電
極および負電極と、上記正電極および負電極に設けられ
た突起電極とを備え、上記接合面近傍で発生し、上記第
１導電型層の対向面または第２導電型層の対向面の他方
を通過した光を外部に取り出すようにしたことを特徴と
している。According to a fifth aspect of the semiconductor light emitting device of the present invention,
In a semiconductor light emitting device that emits light from the vicinity of a joint surface between a conductive type layer and a second conductive type layer, the second conductive surface facing the bonding surface or the facing surface of the first conductive type layer or the second conductive surface facing the bonding surface. A predetermined groove is formed between the groove that penetrates the bonding surface from one of the facing surfaces of the mold layer and reaches the second conductive type layer or the first conductive type layer, and the side surface of the groove formed on the bottom surface of the groove. A second-conductivity-type or first-conductivity-type convex portion that crosses the bonding surface with a gap, one of the facing surface of the first conductive-type layer and the facing surface of the second conductive-type layer, and the upper surface of the convex portion. And a positive electrode and a negative electrode provided with a space between the side surface of the groove and the convex portion, and a protruding electrode provided on the positive electrode and the negative electrode. The light passing through the other surface of the first conductivity type layer or the other surface of the second conductivity type layer is exposed to the outside. It is characterized in that they were taken out.
【００１７】また、請求項６の半導体発光装置は、請求
項５に記載の半導体発光装置において、上記溝の側面と
上記凸部との間の空間が上記溝の底面に向かって先細に
なるように、上記溝の側面及び上記凸部の側面が上記接
合面に対して傾斜面に形成されており、上記接合面近傍
で発生して上記接合面に略平行に進行する光を、上記傾
斜面で反射して、上記他方の対向面に向かわせるように
したことを特徴としている。A semiconductor light emitting device according to a sixth aspect is the semiconductor light emitting device according to the fifth aspect, wherein the space between the side surface of the groove and the convex portion tapers toward the bottom surface of the groove. In addition, the side surface of the groove and the side surface of the convex portion are formed on an inclined surface with respect to the joint surface, and light that is generated in the vicinity of the joint surface and travels substantially parallel to the joint surface is formed on the inclined surface. It is characterized in that it is reflected by and is directed to the other facing surface.
【００１８】また、請求項７の半導体発光装置は、請求
項５または６に記載の半導体発光装置において、発光し
た光を外部に取り出すための光出射面に反射防止膜を形
成したことを特徴としている。A semiconductor light emitting device according to a seventh aspect is the semiconductor light emitting device according to the fifth or sixth aspect, characterized in that an antireflection film is formed on a light emitting surface for taking out the emitted light to the outside. There is.
【００１９】また、請求項８の半導体発光装置は、請求
項５乃至７のいずれか１つに記載の半導体発光装置にお
いて、上記一方の対向面または上記溝の側面または上記
凸部の側面のうちの少なくとも１つに反射膜を設け、上
記一方の対向面に向かう光または上記溝の側面に向かう
光または上記凸部の側面に向かう光のうちの少なくとも
１つを、上記反射膜で反射して上記他方の対向面に向か
わせるようにしたことを特徴としている。The semiconductor light-emitting device according to claim 8 is the semiconductor light-emitting device according to any one of claims 5 to 7, wherein one of the facing surfaces, the side surface of the groove, or the side surface of the convex portion is provided. At least one of which is provided with a reflection film, and at least one of the light directed to the one opposing surface, the light directed to the side surface of the groove, and the light directed to the side surface of the convex portion is reflected by the reflection film. It is characterized in that it is directed toward the other facing surface.
【００２０】[0020]
【作用】上記請求項１の半導体発光装置は、上記接合面
に対向する第１導電型層の対向面または上記接合面に対
向する第２導電型層の対向面の一方に、上記溝を挟んで
正電極および負電極の両方を設け、第１導電型層の対向
面または上記接合面に対向する第２導電型層の対向面の
他方から外部に光を取り出すようにした。したがって、
請求項１の発明によれば、光を取り出す面つまり光出射
面に電極を形成する必要がなくなる。したがって、請求
項１の発明によれば、光出射効率を向上させることがで
きる。In the semiconductor light emitting device according to claim 1, the groove is sandwiched between one of the facing surfaces of the first conductivity type layer facing the bonding surface and the facing surface of the second conductivity type layer facing the bonding surface. Thus, both the positive electrode and the negative electrode are provided, and the light is extracted to the outside from the other surface of the first conductivity type layer or the other surface of the second conductivity type layer which faces the bonding surface. Therefore,
According to the invention of claim 1, it is not necessary to form an electrode on the light extraction surface, that is, the light emission surface. Therefore, according to the invention of claim 1, the light emission efficiency can be improved.
【００２１】また、上記一方の対向面に正電極および負
電極の両方を設け、この正電極および負電極に突起電極
を設けたので、リード線を用いないフリップチップボン
ディングによる実装が可能になり、簡単に実装できるよ
うになる。Further, since both the positive electrode and the negative electrode are provided on the one opposing surface and the protruding electrodes are provided on the positive electrode and the negative electrode, mounting by flip chip bonding without using a lead wire becomes possible, It will be easy to implement.
【００２２】また、請求項２の発明によれば、上記溝が
上記溝の底面に向かって先細になるように、上記溝の側
面を上記接合面に対して傾斜面にして、上記接合面近傍
で発生して上記接合面に略平行に進行する光を、上記傾
斜面で反射して、上記他方の対向面に向かわせる。した
がって、上記溝の側面が上記接合面に対して垂直である
場合に比べて、光出射効率を向上させることができる。Further, according to the invention of claim 2, the side surface of the groove is inclined with respect to the joint surface so that the groove is tapered toward the bottom surface of the groove, and the vicinity of the joint surface is formed. The light that is generated in step S3 and travels substantially parallel to the joint surface is reflected by the inclined surface and directed toward the other facing surface. Therefore, as compared with the case where the side surface of the groove is perpendicular to the joint surface, the light emission efficiency can be improved.
【００２３】また、請求項３の発明によれば、発光した
光を外部に取り出すための光出射面に反射防止膜を形成
している。したがって、上記光出射面で発光光が反射す
ることを防止でき、上記発光した光を光出射面から出射
させて、光出射効率を向上させることができる。Further, according to the invention of claim 3, an antireflection film is formed on the light emitting surface for taking out the emitted light to the outside. Therefore, it is possible to prevent the emitted light from being reflected on the light emitting surface, and to emit the emitted light from the light emitting surface to improve the light emitting efficiency.
【００２４】また、請求項４の発明によれば、上記一方
の対向面または上記溝の側面の少なくとも一方に、反射
膜を設け、上記一方の対向面に向かう光または上記側面
に向かう光の少なくとも一方を、上記反射膜で反射して
上記他方の対向面に向かわせるようにしている。したが
って、上記一方の対向面または上記溝の側面に、臨界角
以内の入射角で入射した光が透過することを防止でき、
上記光を光出射面から外部に取り出すことができるよう
になるので、光出射効率が向上する。According to the invention of claim 4, a reflecting film is provided on at least one of the one opposing surface or the side surface of the groove, and at least light directed to the one opposing surface or light directed to the side surface is provided. One of them is reflected by the reflection film and directed toward the other facing surface. Therefore, it is possible to prevent the light incident at an incident angle within the critical angle from being transmitted to the one facing surface or the side surface of the groove,
Since the light can be extracted from the light emitting surface to the outside, the light emitting efficiency is improved.
【００２５】上記請求項５の半導体発光装置は、上記接
合面を貫通する溝に形成した凸部を有し、上記溝の側面
と凸部との間の空間を挟んで、上記第１または第２導電
型層の対向面の一方と上記凸部の上面とに正電極および
負電極の両方を設け、第１導電型層の対向面または第２
導電型層の対向面の他方から外部に光を取り出すように
した。したがって、請求項５の発明によれば、光を取り
出す面つまり光出射面に電極を形成する必要がなくな
る。したがって、請求項５の発明によれば、光出射効率
を向上させることができる。A semiconductor light emitting device according to a fifth aspect of the present invention has a convex portion formed in a groove penetrating the joint surface, and the first or the first portion is sandwiched with a space between the side surface of the groove and the convex portion. The positive electrode and the negative electrode are both provided on one of the facing surfaces of the second conductivity type layer and the upper surface of the convex portion, and the facing surface of the first conductivity type layer or the second surface is provided.
Light was extracted to the outside from the other opposite surface of the conductive type layer. Therefore, according to the invention of claim 5, it is not necessary to form an electrode on the light extraction surface, that is, the light emission surface. Therefore, according to the invention of claim 5, the light emission efficiency can be improved.
【００２６】また、上記一方の対向面に正電極および負
電極の両方を設け、この正電極および負電極に突起電極
を設けたので、リード線を用いないフリップチップボン
ディングによる実装が可能になり、簡単に実装できるよ
うになる。Further, since both the positive electrode and the negative electrode are provided on the one opposing surface and the protruding electrodes are provided on the positive electrode and the negative electrode, mounting by flip chip bonding without using a lead wire is possible, It will be easy to implement.
【００２７】また、請求項６の発明によれば、上記溝の
側面と上記凸部との間の空間が上記溝の底面に向かって
先細になるように、上記溝の側面および上記凸部の側面
を上記接合面に対して傾斜面にして、上記接合面近傍で
発生して上記接合面に略平行に進行する光を、上記傾斜
面で反射して、上記他方の対向面に向かわせる。したが
って、上記溝の側面および上記凸部の側面が上記接合面
に対して垂直である場合に比べて、光出射効率を向上さ
せることができる。According to the invention of claim 6, the side surface of the groove and the convex portion are formed so that the space between the side surface of the groove and the convex portion tapers toward the bottom surface of the groove. The side surface is an inclined surface with respect to the joint surface, and light generated in the vicinity of the joint surface and traveling substantially parallel to the joint surface is reflected by the inclined surface and directed toward the other facing surface. Therefore, the light emission efficiency can be improved as compared with the case where the side surface of the groove and the side surface of the convex portion are perpendicular to the joint surface.
【００２８】また、請求項７の発明によれば、発光した
光を外部に取り出すための光出射面に反射防止膜を形成
している。したがって、上記光出射面で発光光が反射す
ることを防止でき、上記発光した光を光出射面から出射
させて、光出射効率を向上させることができる。According to the invention of claim 7, an antireflection film is formed on the light emitting surface for taking out the emitted light to the outside. Therefore, it is possible to prevent the emitted light from being reflected on the light emitting surface, and to emit the emitted light from the light emitting surface to improve the light emitting efficiency.
【００２９】また、請求項８の発明によれば、上記一方
の対向面または上記溝の側面または上記凸部の側面のう
ちのの少なくとも１つに反射膜を設け、上記一方の対向
面に向かう光または上記側面に向かう光または上記凸部
の側面に向かう光のうちの少なくとも１つを、上記反射
膜で反射して上記他方の対向面に向かわせるようにして
いる。従って、上記一方の対向面または上記溝の側面ま
たは上記凸部の側面に、臨界角以内の入射角で入射した
光が透過することを防止でき、上記光を光出射面から外
部に取り出すことができるようになるので、光出射効率
が向上する。According to the invention of claim 8, a reflective film is provided on at least one of the one opposing surface, the side surface of the groove or the side surface of the convex portion, and the reflective film is provided toward the one opposing surface. At least one of the light, the light traveling toward the side surface, and the light traveling toward the side surface of the convex portion is reflected by the reflective film and directed toward the other facing surface. Therefore, it is possible to prevent the light incident at an incident angle within the critical angle from passing through the one facing surface, the side surface of the groove, or the side surface of the convex portion, and to extract the light from the light emitting surface to the outside. As a result, the light emission efficiency is improved.
【００３０】[0030]
【実施例】以下、この発明を図示の実施例により詳細に
説明する。The present invention will be described in detail below with reference to the embodiments shown in the drawings.
【００３１】本発明の半導体発光装置の第１実施例を、
その製造工程に沿って、図１を参照しながら説明する。The first embodiment of the semiconductor light emitting device of the present invention is
The manufacturing process will be described with reference to FIG.
【００３２】まず、図１(Ａ)に示すように、Ｎ型基板１
上にエピタキシャル成長法によってＮ型半導体部２とＰ
型半導体部３を順次形成して作製したウェハのエピタキ
シャル層表面つまりＰ型半導体部３の表面３ａからＰＮ
接合面Ｊを通過して上記Ｎ型基板１に達する深さの溝９
をダイシングまたはエッチングによって形成する。な
お、上記溝９の形成時に、上記溝９の傾斜面９ａが上記
ＰＮ接合面Ｊとなす角度θを３０°〜６０°になるよう
にした。つまり、上記溝９は、その底面９ｂに向かって
先細になっている。First, as shown in FIG. 1 (A), an N-type substrate 1
The N-type semiconductor portion 2 and the P
From the surface of the epitaxial layer of the wafer manufactured by sequentially forming the p-type semiconductor part 3, that is, from the surface 3a of the p-type semiconductor part 3 to pn
A groove 9 having a depth that passes through the joint surface J and reaches the N-type substrate 1.
Are formed by dicing or etching. When forming the groove 9, the angle θ formed by the inclined surface 9a of the groove 9 and the PN junction surface J is set to 30 ° to 60 °. That is, the groove 9 is tapered toward the bottom surface 9b.
【００３３】次に、図１(Ｂ)に示すように、上記溝９の
傾斜面９ａから上記Ｐ型半導体部３の表面３ａおよび上
記溝９の底面９ｂに延びた反射膜１０を、溝９と溝９と
が挟む凸部Ｍを挟む一対の傾斜面９ａ，９ａに形成す
る。上記反射膜１０は、上記凸部Ｍに、１つおきに形成
する。上記反射膜１０は、光学的膜厚(屈折率ｎ×厚さ
ｄ)＝(１／４）・λp〔ｎｍ〕のＳｉＯ2（屈折率ｎ＝
１．４６)と光学的膜厚(屈折率ｎ×厚さｄ)＝(１／４)
・λp〔ｎｍ〕のＴｉＯ2(屈折率ｎ＝２.３)との対を４
対有する誘電体多層膜である。ここで、λp〔ｎｍ〕は
発光波長である。フォトリソグラフィと湿式エッチング
によってパターン形成されるか、もしくはリフトオフ法
によってパターン形成される。Next, as shown in FIG. 1B, the reflection film 10 extending from the inclined surface 9a of the groove 9 to the surface 3a of the P-type semiconductor portion 3 and the bottom surface 9b of the groove 9 is provided with a groove 9a. Is formed on the pair of inclined surfaces 9a, 9a sandwiching the convex portion M sandwiched between the groove 9 and the groove 9. The reflective films 10 are formed on every other convex portion M. The reflective film 10 has an optical film thickness (refractive index n × thickness d) = (1/4) · λ p [nm] of SiO 2 (refractive index n =
1.46) and optical film thickness (refractive index n × thickness d) = (1/4)
・ 4 pairs of λ p [nm] with TiO 2 (refractive index n = 2.3)
It is a dielectric multilayer film having a pair. Here, λ p [nm] is an emission wavelength. It is patterned by photolithography and wet etching or by lift-off method.
【００３４】次に、図１(Ｃ)に示すように、上記反射膜
１０を形成した凸部ＭのＰ型半導体部３の表面３ａおよ
びこの表面３ａに形成した反射面１０の表面に正(Ｐ)電
極５を形成ずる。このＰ電極５は、例えば、Ａｕ／Ａｕ
Ｚｎからなり、蒸着とフォトリソグラフィと湿式エッチ
ングによって形成される。また、上記反射膜１０を形成
した凸部Ｍの隣の凸部ＭのＰ型半導体部３の表面３ａお
よびこの表面３ａに隣接する傾斜面９ａ,９ａおよびこ
の傾斜面９ａに隣接する溝底面９ｂの一部に負(Ｎ)電極
４を形成する。このＮ電極４は、例えば、ＡｕＧｅ／Ｎ
ｉからなり、蒸着とフォトリソグラフィと湿式エッチン
グによって形成される。Ｎ電極４は電気的にはＮ型半導
体部２とＰ型半導体部３を短絡し、Ｎ型基板１と電気的
接続することとなる。つまり、上記Ｎ電極４側の凸部は
電極導出用として形成される。Next, as shown in FIG. 1C, the surface 3a of the P-type semiconductor portion 3 of the convex portion M on which the reflection film 10 is formed and the surface of the reflection surface 10 formed on the surface 3a are positive ( P) The electrode 5 is formed. The P electrode 5 is made of, for example, Au / Au.
It is made of Zn and is formed by vapor deposition, photolithography, and wet etching. Further, the surface 3a of the P-type semiconductor portion 3 of the convex portion M adjacent to the convex portion M on which the reflection film 10 is formed, the inclined surfaces 9a and 9a adjacent to the surface 3a, and the groove bottom surface 9b adjacent to the inclined surface 9a. The negative (N) electrode 4 is formed on a part of the surface. The N electrode 4 is made of, for example, AuGe / N.
i, and is formed by vapor deposition, photolithography, and wet etching. The N electrode 4 electrically short-circuits the N-type semiconductor portion 2 and the P-type semiconductor portion 3 and is electrically connected to the N-type substrate 1. That is, the convex portion on the N electrode 4 side is formed for leading out the electrode.
【００３５】次に、図１(Ｄ)に示すように、Ｎ型基板１
の表面１ａに、反射防止膜１１を形成する。この反射防
止膜１１は、たとえば、光学的膜厚ｎ×ｄ＝(１／４）
・λp〔ｎｍ〕のＴｉＯ2(屈折率ｎ＝２.３)からなる。Next, as shown in FIG. 1D, the N-type substrate 1
An antireflection film 11 is formed on the surface 1a of the. The antireflection film 11 has, for example, an optical film thickness n × d = (1/4)
· Lambda p consisting TiO 2 (refractive index n = 2.3) of [nm].
【００３６】次に、図１(Ｅ)に示すように、上記Ｐ型半
導体部３の表面３ａと対向する領域にあるＮ電極４の表
面に、Ａｕや半田等からなるバンプ電極１２を形成す
る。また、Ｐ型半導体部３の表面３ａと対向する領域に
あるＰ電極５の表面に、Ａｕや半田等からなるバンプ電
極１２を形成する。Next, as shown in FIG. 1 (E), a bump electrode 12 made of Au, solder or the like is formed on the surface of the N electrode 4 in a region facing the surface 3a of the P-type semiconductor portion 3. . Further, the bump electrode 12 made of Au, solder, or the like is formed on the surface of the P electrode 5 in the region facing the surface 3a of the P-type semiconductor portion 3.
【００３７】そして、最後に、図１(Ｅ)に示すウェハ
を、ダイシングによって分割して、図２に示すチップを
作製する。このチップが、この実施例の半導体発光装置
すなわち発光ダイオードである。Then, finally, the wafer shown in FIG. 1E is divided by dicing to produce the chips shown in FIG. This chip is the semiconductor light emitting device of this embodiment, that is, the light emitting diode.
【００３８】上記構成の半導体発光装置は、Ｐ電極５と
Ｎ電極４との間に電圧を印加すると、上記Ｐ電極５に対
向するＰＮ接合面Ｊの近傍で発光する。Ｎ電極４に対向
するＰＮ接合面Ｊでは、上記の如く短絡されており発光
しない。上記発光による発光光は、上記ＰＮ接合面Ｊに
対向するＮ型半導体部２の対向面２ａを通過して、Ｎ型
基板１の表面１ａつまり光出射面から外部に出射する。When a voltage is applied between the P electrode 5 and the N electrode 4, the semiconductor light emitting device having the above structure emits light in the vicinity of the PN junction surface J facing the P electrode 5. The PN junction surface J facing the N electrode 4 is short-circuited as described above and does not emit light. The light emitted by the light emission passes through the facing surface 2a of the N-type semiconductor portion 2 facing the PN junction surface J, and is emitted to the outside from the surface 1a of the N-type substrate 1, that is, the light emitting surface.
【００３９】また、上記ＰＮ接合面Ｊの近傍で発光し、
上記溝９の傾斜面９ａに達した光は、上記傾斜面９ａに
形成した反射膜１０で反射されて、上記光出射面に向か
って進み、上記光出射面から外部に出射する。Further, light is emitted in the vicinity of the PN junction surface J,
The light reaching the inclined surface 9a of the groove 9 is reflected by the reflection film 10 formed on the inclined surface 9a, travels toward the light emitting surface, and is emitted from the light emitting surface to the outside.
【００４０】また、上記ＰＮ接合面Ｊの近傍で発光し、
上記光出射面と逆方向に進行してＰ電極５に向かう光
は、上記Ｐ型半導体部３の表面３ａに有る反射膜１０で
反射されて、上記光出射面に向かって進み、上記光出射
面から外部に出射する。Further, light is emitted in the vicinity of the PN junction surface J,
The light traveling toward the P electrode 5 in the direction opposite to the light emitting surface is reflected by the reflection film 10 on the surface 3a of the P-type semiconductor portion 3 and travels toward the light emitting surface to emit the light. Emitted from the surface to the outside.
【００４１】上記半導体発光装置は、溝９を挟むＰ型半
導体部３の表面３ａにＰ電極５およびＮ電極４を形成す
る一方、上記ＰＮ接合面Ｊを挟んで上記表面３ａに対向
するＮ型基板１の表面１ａを光出射面にした。つまり、
この実施例は、光出射面に電極５,４を形成していない
から、電極５,４が光出射面から出射する光を遮ること
がない。したがって、この実施例によれば、光出射面に
電極を形成する必要がある従来例に比べて、光出射効率
を向上させることができる。In the semiconductor light emitting device described above, the P electrode 5 and the N electrode 4 are formed on the surface 3a of the P type semiconductor portion 3 which sandwiches the groove 9, while the N type which faces the surface 3a with the PN junction surface J sandwiched therebetween. The surface 1a of the substrate 1 was used as a light emitting surface. That is,
In this embodiment, since the electrodes 5 and 4 are not formed on the light emitting surface, the electrodes 5 and 4 do not block the light emitted from the light emitting surface. Therefore, according to this embodiment, the light emission efficiency can be improved as compared with the conventional example in which the electrode needs to be formed on the light emission surface.
【００４２】また、上記Ｐ型半導体部３の表面３ａに形
成したＰ電極５およびＮ電極４にバンプ電極１２を形成
したので、この実施例は、リード線を用いないフリップ
チップボンディングによる実装が可能になり、簡単に実
装できるようになる。Since the bump electrodes 12 are formed on the P electrode 5 and the N electrode 4 formed on the surface 3a of the P-type semiconductor portion 3, this embodiment can be mounted by flip chip bonding without using lead wires. And can be easily implemented.
【００４３】また、上記溝９が、その底面９ｂに向かっ
て先細になるように、上記溝９の側面を上記ＰＮ接合面
Ｊに対して傾斜面９ａにし、上記ＰＮ接合面Ｊ近傍で発
生して上記ＰＮ接合面Ｊに略平行に進行する光を、上記
傾斜面９ａで反射して、上記Ｎ型基板１の表面１ａ(光
出射面)に向かわせるようにしたので、上記溝９の側面
が上記接合面Ｊに対して垂直である場合に比べて、光出
射効率を向上させることができる。Further, the side surface of the groove 9 is formed as an inclined surface 9a with respect to the PN junction surface J so that the groove 9 is tapered toward the bottom surface 9b. Since the light traveling substantially parallel to the PN junction surface J is reflected by the inclined surface 9a and directed toward the surface 1a (light emission surface) of the N-type substrate 1, the side surface of the groove 9 is formed. The light emission efficiency can be improved as compared with the case where is perpendicular to the joint surface J.
【００４４】また、発光した光を外部に取り出すための
表面１ａ(光出射面)に反射防止膜１１を形成したので、
上記光出射面で発光光が反射することを防止でき、光出
射効率を向上させることができる。Since the antireflection film 11 is formed on the surface 1a (light emitting surface) for taking out the emitted light to the outside,
It is possible to prevent the emitted light from being reflected on the light emitting surface and improve the light emitting efficiency.
【００４５】また、上記Ｐ型半導体部３の表面３ａ及び
上記傾斜面９ａに反射膜１０を形成したので、上記表面
３ａまたは上記傾斜面９ａに、臨界角以内の入射角で入
射した発光光が透過することを防止でき、上記発光光を
上記反射膜１０で反射して、光出射面から外部に取り出
すことができるようになるので、光出射効率が向上す
る。さらに、上記反射膜１０はＳｉＯ2膜およびＴｉＯ2
膜を含む絶縁膜であるので、上記反射膜１０は、この実
施例を実装するときにダイボンド時に使用する導電性ペ
ーストや半田によって各半導体部が電気的に短絡するこ
とを防止する。尚、上記実施例では、傾斜面９ａを平面
にしたが、傾斜面９ａを曲面にしてもよい。Further, since the reflection film 10 is formed on the surface 3a of the P-type semiconductor portion 3 and the inclined surface 9a, the emitted light incident on the surface 3a or the inclined surface 9a at an incident angle within the critical angle. It is possible to prevent the light from being transmitted, and the emitted light can be reflected by the reflective film 10 and taken out from the light emitting surface, so that the light emitting efficiency is improved. Further, the reflection film 10 is made of SiO 2 film and TiO 2 film.
Since it is an insulating film including a film, the reflective film 10 prevents each semiconductor portion from being electrically short-circuited by the conductive paste or solder used during die bonding when mounting this embodiment. Although the inclined surface 9a is a flat surface in the above embodiment, the inclined surface 9a may be a curved surface.
【００４６】次に、本発明の第２実施例を、その製造工
程に沿って、図３を参照しながら説明する。Next, a second embodiment of the present invention will be described along with its manufacturing process with reference to FIG.
【００４７】まず、図３(Ａ)に示すように、Ｎ型基板３
１上にエピタキシャル成長法によってＮ型半導体部３２
とＰ型半導体部３３を順次形成して作製したウェハのエ
ピタキシャル層表面つまりＰ型半導体部３３の表面３３
ａからＰＮ接合面Ｋを通過して上記Ｎ型基板３１に達す
る深さの溝３９をダイシングまたはエッチングによって
形成する。なお、上記溝３９の形成時に、上記溝３９の
側面３９ａが上記ＰＮ接合面Ｋとなす角度θ１を３０°
〜６０°にすることが望ましい。つまり、上記溝３９
は、その底面３９ｂに向かって先細にすることが望まし
い。この溝３９を形成することによって、溝３９の両側
に、ＰＮ接合面Ｋを含む凸部Ｗが形成される。First, as shown in FIG. 3A, the N-type substrate 3
N-type semiconductor portion 32 formed on the substrate 1 by the epitaxial growth method.
Surface of the P-type semiconductor portion 33, that is, the surface of the epitaxial layer of the wafer manufactured by sequentially forming
A groove 39 having a depth passing from a to the PN junction surface K and reaching the N-type substrate 31 is formed by dicing or etching. When forming the groove 39, an angle θ1 formed by the side surface 39a of the groove 39 and the PN junction surface K is 30 °.
It is desirable to set it to -60 °. That is, the groove 39
Is preferably tapered toward its bottom surface 39b. By forming the groove 39, the convex portions W including the PN junction surface K are formed on both sides of the groove 39.
【００４８】次に、図３(Ｂ)に示すように、エピタキシ
ャル成長法を使用して、溝３９にＮ型半導体部４２を埋
め込む。その後、上記Ｐ型半導体部３３の表面３３ａお
よび上記Ｎ型半導体部４２の表面４２ａを研磨する。Next, as shown in FIG. 3B, the N-type semiconductor portion 42 is embedded in the groove 39 by using the epitaxial growth method. Then, the surface 33a of the P-type semiconductor portion 33 and the surface 42a of the N-type semiconductor portion 42 are polished.
【００４９】次に、図３(Ｃ)に示すように、エッチング
またはダイシングによって、上記Ｎ型半導体部４２の表
面４２ａから上記ＰＮ接合面Ｋを横切って通過する溝４
３を形成する。この溝４３は、上記溝３９の側面３９ａ
である一方の側面４３ａと、垂線に関して側面４３ａと
対称な他方の側面４３ｂとを有し、上記側面４３ａと側
面４３ｂとは最底端で交わって鋭角をなしている。この
溝４３を形成することによって、上記ＰＮ接合面Ｋを含
む凸部Ｗと凸部Ｗとの間に、溝４３を介して、ＰＮ接合
面を含まないＮ型半導体からなる凸部Ｚが形成される。
この凸部Ｚは、凸部Ｗと略同一の形状になっている。そ
して、ＰＮ接合面Ｋの延長面と上記側面４３ｂとがなす
角度θ２は、上記角度θ１に略等しい。Next, as shown in FIG. 3C, a groove 4 passing from the surface 42a of the N-type semiconductor portion 42 across the PN junction surface K by etching or dicing.
3 is formed. This groove 43 is a side surface 39 a of the groove 39.
And the other side surface 43b symmetrical to the side surface 43a with respect to the vertical line, the side surfaces 43a and 43b intersect at the bottom end to form an acute angle. By forming the groove 43, a convex portion Z made of an N-type semiconductor not including the PN junction surface is formed between the convex portion W including the PN junction surface K and the convex portion W via the groove 43. To be done.
The protrusion Z has substantially the same shape as the protrusion W. The angle θ2 formed by the extension surface of the PN junction surface K and the side surface 43b is substantially equal to the angle θ1.
【００５０】次に、図３（Ｄ)に示すように、上記凸部
Ｗの側面である溝３９の側面３９ａと、上記Ｐ型半導体
部３３の表面３３ａの周辺部と、上記凸部Ｚの側面であ
る溝４３の側面４３ｂと、上記凸部Ｚの上面の周辺部と
に、反射膜４４を形成する。この反射膜４４は、たとえ
ば、光学的膜厚（屈折率ｎ×厚さｄ）＝（１／４）・λ
P〔ｎｍ〕のＳｉＯ2（屈折率ｎ＝１．４６）と、光学的
膜厚(屈折率ｎ×厚さｄ)＝(１／４)・λp〔ｎｍ〕のＴ
ｉＯ2(屈折率ｎ＝２.３)との対を８対有する誘電体多層
膜である。ここで、λp〔ｎｍ〕は発光波長である。こ
の誘電体多層膜は、フォトリソグラフィと湿式エッチン
グによってパターン形成されるか、もしくはリフトオフ
法によってパターン形成される。Next, as shown in FIG. 3D, the side surface 39a of the groove 39 which is the side surface of the convex portion W, the peripheral portion of the surface 33a of the P-type semiconductor portion 33, and the convex portion Z are formed. The reflection film 44 is formed on the side surface 43b of the groove 43 which is the side surface and on the peripheral portion of the upper surface of the convex portion Z. The reflective film 44 has, for example, an optical film thickness (refractive index n × thickness d) = (1/4) · λ.
T of P SiO in [nm] 2 (refractive index n = 1.46), an optical film thickness (refractive index n × thickness d) = (1/4) · λ p [nm]
It is a dielectric multilayer film having 8 pairs with iO 2 (refractive index n = 2.3). Here, λ p [nm] is an emission wavelength. This dielectric multilayer film is patterned by photolithography and wet etching, or by lift-off method.
【００５１】次に、図３(Ｅ)に示すように、上記ＰＮ接
合面Ｋを含む凸部Ｗの上面であるＰ型半導体部３３の表
面３３ａの中央部に正（Ｐ）電極３５を形成し、上記Ｐ
Ｎ接合面Ｋを含まない凸部Ｚの上面に負（Ｎ）電極３４
を形成する。上記正電極３５は、例えば、Ａｕ／ＡｕＺ
ｎからなり、蒸着とフォトリソグラフィと湿式エッチン
グによって形成される。また、上記負電極３４は、例え
ば、ＡｕＧｅ／Ｎｉからなり、蒸着とフォトリソグラフ
ィと湿式エッチングによって形成される。この負電極３
４側の凸部Ｚは、電極導出用として形成されたものであ
る。Next, as shown in FIG. 3E, a positive (P) electrode 35 is formed at the center of the surface 33a of the P-type semiconductor portion 33 which is the upper surface of the convex portion W including the PN junction surface K. And above P
The negative (N) electrode 34 is provided on the upper surface of the convex portion Z not including the N-junction surface K.
To form. The positive electrode 35 is, for example, Au / AuZ.
n, and is formed by vapor deposition, photolithography, and wet etching. The negative electrode 34 is made of AuGe / Ni, for example, and is formed by vapor deposition, photolithography, and wet etching. This negative electrode 3
The convex portion Z on the fourth side is formed to lead out the electrode.
【００５２】次に、図３(Ｅ)に示すように、Ｎ型基板３
１の表面３１ａに、反射防止膜４５を形成する。この反
射防止膜４５は、例えば、光学的膜厚ｎ×ｄ＝(１／
４）・λp〔ｎｍ〕のＴｉＯ2(屈折率ｎ＝２.３)で形成
する。Next, as shown in FIG. 3 (E), the N-type substrate 3
The antireflection film 45 is formed on the first surface 31 a. The antireflection film 45 has, for example, an optical film thickness n × d = (1 /
4) λ p [nm] of TiO 2 (refractive index n = 2.3).
【００５３】次に、図３(Ｅ)に示すように、上記Ｎ電極
３４の表面およびＰ電極３５の表面に、Ａｕや半田等か
らなるバンプ電極４６を形成する。Next, as shown in FIG. 3E, bump electrodes 46 made of Au, solder or the like are formed on the surfaces of the N electrode 34 and the P electrode 35.
【００５４】そして、最後に、図３(Ｅ)に示すウェハ
を、ダイシングまたは劈開によって分割して、図４に示
すチップを作製する。このチップが、この実施例の半導
体発光装置すなわち発光ダイオードである。Finally, the wafer shown in FIG. 3E is divided by dicing or cleavage to produce the chips shown in FIG. This chip is the semiconductor light emitting device of this embodiment, that is, the light emitting diode.
【００５５】上記構成の半導体発光装置は、Ｐ電極３５
とＮ電極３４との間に電圧を印加すると、上記Ｐ電極３
５に対向するＰＮ接合面Ｋの近傍で発光する。上記発光
による発光光は、上記ＰＮ接合面Ｋに対向するＮ型半導
体部３２の対向面３２ａを通過して、Ｎ型基板３１の表
面３１ａつまり光出射面から外部に出射する。The semiconductor light emitting device having the above-mentioned structure is provided with the P electrode 35.
When a voltage is applied between the P electrode 3 and the N electrode 34,
Light is emitted in the vicinity of the PN junction surface K facing 5 The light emitted by the light emission passes through the facing surface 32a of the N-type semiconductor portion 32 facing the PN junction surface K and is emitted to the outside from the surface 31a of the N-type substrate 31, that is, the light emitting surface.
【００５６】また、上記ＰＮ接合面Ｋの近傍で発光し、
上記溝４３の傾斜面４３ａに達した光は、上記傾斜面４
３ａに形成した反射膜４４で反射されて、上記光出射面
に向かって進み、上記光出射面から外部に出射する。Further, light is emitted in the vicinity of the PN junction surface K,
The light that has reached the inclined surface 43 a of the groove 43 is
The light is reflected by the reflection film 44 formed on 3a, travels toward the light emitting surface, and is emitted to the outside from the light emitting surface.
【００５７】また、上記ＰＮ接合面Ｋの近傍で発光し、
上記光出射面と逆方向に進行してＰ電極３５に向かう光
は、上記Ｐ型半導体部３３の表面３３ａに有る反射膜４
４で反射されて、上記光出射面に向かって進み、上記光
出射面から外部に出射する。上記半導体発光装置は、溝
４３を挟む凸部Ｗの上面と凸部Ｚの上面に、Ｐ電極３５
とＮ電極３４を形成する一方、上記凸部ＷおよびＺの底
面側のＮ型基板３１の表面３１ａを光出射面とした。つ
まり、この実施例は、光出射面に電極３５,３４を形成
していないから、電極３５,３４が光出射面から出射す
る光を遮ることがない。したがって、この実施例によれ
ば、光出射面に電極を形成する必要がある従来例に比べ
て、光出射効率を向上させることができる。Further, light is emitted in the vicinity of the PN junction surface K,
The light traveling in the opposite direction to the light emitting surface and traveling toward the P electrode 35 is reflected by the reflection film 4 on the surface 33 a of the P type semiconductor portion 33.
The light is reflected at 4, travels toward the light exit surface, and exits from the light exit surface. In the semiconductor light emitting device, the P electrode 35 is provided on the upper surface of the convex portion W and the upper surface of the convex portion Z that sandwich the groove 43.
While the N electrode 34 is formed with the above, the surface 31a of the N-type substrate 31 on the bottom side of the convex portions W and Z is used as the light emitting surface. That is, in this embodiment, since the electrodes 35 and 34 are not formed on the light emitting surface, the electrodes 35 and 34 do not block the light emitted from the light emitting surface. Therefore, according to this embodiment, the light emission efficiency can be improved as compared with the conventional example in which the electrode needs to be formed on the light emission surface.
【００５８】また、凸部Ｗ上のＰ電極３５および凸部Ｚ
上のＮ電極３４にバンプ電極４６を形成したので、この
実施例は、リード線を用いないフリップチップボンディ
ングによる実装が可能になり、簡単に実装できるように
なる。たとえば、図５に示すように、この実施例５０
は、導電性ペースト５６を用いたフリップチップボンデ
ィングによって、簡単にリードフレーム５７に実装する
ことができる。図５において、５９は透光性樹脂であ
る。In addition, the P electrode 35 on the convex portion W and the convex portion Z
Since the bump electrode 46 is formed on the upper N electrode 34, this embodiment can be mounted by flip chip bonding without using a lead wire, and can be easily mounted. For example, as shown in FIG.
Can be easily mounted on the lead frame 57 by flip-chip bonding using the conductive paste 56. In FIG. 5, reference numeral 59 is a translucent resin.
【００５９】また、上記溝４３が、その底に向かって先
細になるように、上記溝４３の側面４３ａを上記ＰＮ接
合面Ｋに対して傾斜面にし、上記ＰＮ接合面Ｋ近傍で発
生して上記ＰＮ接合面Ｋに略平行に進行する光を、上記
側面４３ａで反射して、上記Ｎ型基板３１の表面３１ａ
(光出射面)に向かわせるようにしたので、上記溝４３の
側面４３ａが上記接合面Ｋに対して垂直である場合に比
べて、光出射効率を向上させることができる。The side surface 43a of the groove 43 is inclined with respect to the PN junction surface K so that the groove 43 is tapered toward the bottom thereof, and the side surface 43a is generated in the vicinity of the PN junction surface K. The light that travels substantially parallel to the PN junction surface K is reflected by the side surface 43a, and the surface 31a of the N-type substrate 31 is reflected.
Since the light is directed toward the (light emitting surface), the light emitting efficiency can be improved as compared with the case where the side surface 43a of the groove 43 is perpendicular to the joint surface K.
【００６０】また、発光した光を外部に取り出すための
表面３１ａ(光出射面)に反射防止膜４５を形成したの
で、上記光出射面で発光光が反射することを防止でき、
光出射効率を向上させることができる。Further, since the antireflection film 45 is formed on the surface 31a (light emitting surface) for taking out the emitted light to the outside, it is possible to prevent the emitted light from being reflected on the light emitting surface,
The light emission efficiency can be improved.
【００６１】また、上記Ｐ型半導体部３３の表面３３ａ
及び上記側面４３ａに反射膜４４を形成したので、上記
表面３３ａまたは上記側面４３ａに、臨界角以内の入射
角で入射した発光光が透過することを防止でき、上記発
光光を上記反射膜４４で反射して、光出射面から外部に
取り出すことができるようになるので、光出射効率が向
上する。また、上記発光光透過防止によって、従来の図
７に示すようにリードフレーム６７をカップ形状にする
必要がなくなり、コストダウンを図れる。The surface 33a of the P-type semiconductor portion 33 is also provided.
Since the reflective film 44 is formed on the side surface 43a, it is possible to prevent the emitted light incident on the surface 33a or the side surface 43a at an incident angle within the critical angle from passing therethrough, and the emitted light is reflected by the reflective film 44. Since the light can be reflected and taken out from the light emitting surface, the light emitting efficiency is improved. Further, by preventing the emitted light transmission, it is not necessary to form the lead frame 67 into a cup shape as shown in FIG.
【００６２】更に、上記反射膜４４はＳｉＯ2膜および
ＴｉＯ2膜を含む絶縁膜であるので、上記反射膜４４
は、この実施例を実装するときにダイボンド時に使用す
る導電性ペーストや半田によって各半導体部が電気的に
短絡することを防止する。更に、上記反射膜４４は、接
合部の保護膜としての作用がある。Further, since the reflecting film 44 is an insulating film including a SiO 2 film and a TiO 2 film, the reflecting film 44 is
Prevents the semiconductor parts from being electrically short-circuited by the conductive paste or solder used during die bonding when mounting this embodiment. Further, the reflective film 44 has a function as a protective film for the joint.
【００６３】尚、上記実施例では、溝４３の側面４３ａ
を平面にしたが、側４３ａを曲面にしてもよい。In the above embodiment, the side surface 43a of the groove 43 is formed.
Although the side 43a is a flat surface, the side 43a may be a curved surface.
【００６４】[0064]
【発明の効果】以上より明らかなように、請求項１の発
明の半導体発光装置は、第１導電型層と第２導電型層と
の接合面に対向する第１導電型層の対向面または上記接
合面に対向する第２導電型層の対向面の一方に、上記溝
を挟んで正電極および負電極の両方を設け、第１導電型
層の対向面または上記接合面に対向する第２導電型層の
対向面の他方から外部に光を取り出すようにした。即
ち、請求項１の発明は、光を取り出す面つまり光出射面
に電極を形成していないから、光出射面から出射する光
を電極で遮ることがなく、光出射効率を向上させること
ができる。As is apparent from the above, the semiconductor light emitting device according to the first aspect of the invention has the first conductive type layer facing the bonding surface between the first conductive type layer and the second conductive type layer, or A positive electrode and a negative electrode are provided on one of the facing surfaces of the second conductivity type layer facing the bonding surface, with the groove interposed therebetween, and a second surface facing the facing surface of the first conductivity type layer or the bonding surface. Light was extracted to the outside from the other opposite surface of the conductive type layer. That is, in the invention of claim 1, since no electrode is formed on the light extraction surface, that is, the light emission surface, the light emission efficiency can be improved without blocking the light emitted from the light emission surface by the electrode. .
【００６５】また、上記一方の対向面に正電極および負
電極の両方を設け、この正電極および負電極に突起電極
を設けたので、リード線を用いないフリップチップボン
ディングによる実装が可能になり、簡単に実装できるよ
うになる。Further, since both the positive electrode and the negative electrode are provided on the one opposing surface and the protruding electrodes are provided on the positive electrode and the negative electrode, mounting by flip chip bonding without using a lead wire is possible, It will be easy to implement.
【００６６】また、請求項２の半導体発光装置は、上記
溝が上記溝の底面に向かって先細になるように、上記溝
の側面を上記接合面に対して傾斜面にして、上記接合面
近傍で発生して上記接合面に略平行に進行する光を、上
記傾斜面で反射して、上記他方の対向面に向かわせるよ
うにしている。したがって、上記溝の側面が上記接合面
に対して垂直である場合に比べて、光出射効率を向上さ
せることができる。According to a second aspect of the semiconductor light emitting device of the present invention, the side surface of the groove is inclined with respect to the joint surface so that the groove is tapered toward the bottom surface of the groove, and the vicinity of the joint surface is provided. The light that is generated in step S3 and proceeds substantially parallel to the joint surface is reflected by the inclined surface and directed toward the other facing surface. Therefore, as compared with the case where the side surface of the groove is perpendicular to the joint surface, the light emission efficiency can be improved.
【００６７】また、請求項３に記載の半導体発光装置
は、発光した光を外部に取り出すための光出射面に反射
防止膜を形成している。したがって、上記光出射面で発
光光が反射することを防止でき、上記発光光を光出射面
から出射させて、光出射効率を向上させることができ
る。Further, in the semiconductor light emitting device according to the third aspect, the antireflection film is formed on the light emitting surface for taking out the emitted light to the outside. Therefore, it is possible to prevent the emitted light from being reflected by the light emitting surface, and to emit the emitted light from the light emitting surface to improve the light emitting efficiency.
【００６８】また、請求項４に記載の半導体発光装置
は、上記一方の対向面または上記溝の側面の少なくとも
一方に、反射膜を設け、上記一方の対向面に向かう光ま
たは上記溝の側面に向かう光の少なくとも一方を、上記
反射膜で反射して上記他方の対向面に向かわせるように
している。したがって、上記一方の対向面または上記溝
の側面に臨界角以内の入射角で入射した光が透過するこ
とを防止でき、上記光を光出射面から外部に取り出すこ
とができるようになるので、光出射効率が向上する。Further, in the semiconductor light emitting device according to a fourth aspect of the present invention, a reflection film is provided on at least one of the one opposing surface or the side surface of the groove, and light directed toward the one opposing surface or the side surface of the groove is provided. At least one of the traveling lights is reflected by the reflective film and directed toward the other facing surface. Therefore, it is possible to prevent the light incident on the one opposing surface or the side surface of the groove at an incident angle within the critical angle from passing therethrough, and it becomes possible to take out the light from the light emitting surface to the outside. The emission efficiency is improved.
【００６９】請求項５の発明の半導体発光装置は、溝の
側面と凸部との間の空間を挟んで、第１または第２導電
型層の対向面の一方と上記凸部の上面とに接合面を貫通
する溝に形成した凸部を有し、正電極および負電極の両
方を設け、第１導電型層の対向面または上記接合面に対
向する第２導電型層の対向面の他方から外部に光を取り
出すようにした。即ち、請求項５の発明は、光を取り出
す面つまり光出射面に電極を形成していないから、光出
射面から出射する光を電極で遮ることがなく、光出射効
率を向上させることができる。According to a fifth aspect of the semiconductor light emitting device of the present invention, one of the facing surfaces of the first or second conductivity type layer and the upper surface of the convex portion are sandwiched by a space between the side surface of the groove and the convex portion. It has a convex portion formed in a groove penetrating the joint surface, is provided with both a positive electrode and a negative electrode, and is the other surface of the opposite surface of the first conductivity type layer or the opposite surface of the second conductivity type layer that opposes the joint surface. I tried to extract light from the outside. That is, in the invention of claim 5, since no electrode is formed on the light extraction surface, that is, the light emission surface, the light emission efficiency can be improved without blocking the light emitted from the light emission surface by the electrode. .
【００７０】また、上記一方の対向面に正電極および負
電極の両方を設け、この正電極および負電極に突起電極
を設けたので、リード線を用いないフリップチップボン
ディングによる実装が可能になり、簡単に実装できるよ
うになる。Further, since both the positive electrode and the negative electrode are provided on the one opposing surface and the protruding electrodes are provided on the positive electrode and the negative electrode, mounting by flip chip bonding without using a lead wire is possible, It will be easy to implement.
【００７１】また、請求項６の半導体発光装置は、上記
溝の側面と上記凸部との間の空間が上記溝の底面に向か
って先細になるように、上記溝の側面および上記凸部の
側面を上記接合面に対して傾斜面にして、上記接合面近
傍で発生して上記接合面に略平行に進行する光を、上記
傾斜面で反射して、上記他方の対向面に向かわせるよう
にしている。したがって、上記溝の側面および凸部の側
面が上記接合面に対して垂直である場合に比べて、光出
射効率を向上させることができる。According to a sixth aspect of the semiconductor light emitting device of the present invention, the side surface of the groove and the convex portion are formed so that the space between the side surface of the groove and the convex portion tapers toward the bottom surface of the groove. The side surface is inclined with respect to the joint surface, and light generated in the vicinity of the joint surface and traveling substantially parallel to the joint surface is reflected by the inclined surface and directed toward the other opposing surface. I have to. Therefore, the light emission efficiency can be improved as compared with the case where the side surface of the groove and the side surface of the convex portion are perpendicular to the joint surface.
【００７２】また、請求項７に記載の半導体発光装置
は、発光した光を外部に取り出すための光出射面に反射
防止膜を形成している。したがって、上記光出射面で発
光光が反射することを防止でき、上記発光光を光出射面
から出射させて、光出射効率を向上させることができ
る。Further, in the semiconductor light emitting device according to the seventh aspect, the antireflection film is formed on the light emitting surface for taking out the emitted light to the outside. Therefore, it is possible to prevent the emitted light from being reflected by the light emitting surface, and to emit the emitted light from the light emitting surface to improve the light emitting efficiency.
【００７３】また、請求項８に記載の半導体発光装置
は、上記一方の対向面または上記溝の側面または上記凸
部の側面のうちの少なくとも１つに反射膜を設け、上記
一方の対向面に向かう光または上記溝の側面に向かう光
または上記凸部の側面に向かう光のうちの少なくとも１
つを、上記反射膜で反射して上記他方の対向面に向かわ
せるようにしている。したがって、上記一方の対向面ま
たは上記溝の側面または上記凸部の側面に臨界角以内の
入射角で入射した光が透過することを防止でき、上記光
を光出射面から外部に取り出すことができるようになる
ので、光出射効率が向上するFurther, in the semiconductor light emitting device according to claim 8, a reflective film is provided on at least one of the one opposing surface, the side surface of the groove, or the side surface of the convex portion, and the one opposing surface is provided. At least one of light directed to the side surface of the groove or light directed to the side surface of the convex portion.
One of them is reflected by the reflection film and directed toward the other facing surface. Therefore, it is possible to prevent the light incident on the one opposing surface, the side surface of the groove, or the side surface of the convex portion at an incident angle within the critical angle from passing therethrough, and to extract the light from the light emitting surface to the outside. As a result, the light emission efficiency is improved.
【図面の簡単な説明】[Brief description of drawings]
【図１】 この発明の半導体発光装置の第１実施例の製
造工程を説明する図である。FIG. 1 is a diagram illustrating a manufacturing process of a first embodiment of a semiconductor light emitting device of the present invention.
【図２】 上記第１実施例の断面図である。FIG. 2 is a sectional view of the first embodiment.
【図３】 この発明の第２実施例の製造工程を説明する
図である。FIG. 3 is a drawing for explaining the manufacturing process of the second embodiment of the present invention.
【図４】 上記第２実施例の断面図である。FIG. 4 is a sectional view of the second embodiment.
【図５】 上記第２実施例の実装例を示す断面図であ
る。FIG. 5 is a sectional view showing a mounting example of the second embodiment.
【図６】 従来例の断面図である。FIG. 6 is a cross-sectional view of a conventional example.
【図７】 上記従来例の実装例を示す断面図である。FIG. 7 is a cross-sectional view showing a mounting example of the conventional example.
１，３１…Ｎ型基板、２，４２…Ｎ型半導体部、３，４
３…Ｐ型半導体部、４，３４…Ｎ電極、５，３５…Ｐ電
極、９，３９，４３…溝、９ａ…傾斜面、１０，４４…
反射膜、１１，４５…反射防止膜、１２，４６…バンプ
電極、Ｊ，Ｋ…ＰＮ接合面、３９ａ，４３ａ，４３ｂ…
側面。1, 31 ... N type substrate, 2, 42 ... N type semiconductor portion, 3, 4
3 ... P-type semiconductor part, 4, 34 ... N electrode, 5, 35 ... P electrode, 9, 39, 43 ... Groove, 9a ... Slope, 10, 44 ...
Reflection film, 11, 45 ... Antireflection film, 12, 46 ... Bump electrode, J, K ... PN junction surface, 39a, 43a, 43b ...
side.
Claims (8)
近傍から光を発生させる半導体発光装置において、 上記接合面に対向する上記第１導電型層の対向面または
上記接合面に対向する上記第２導電型層の対向面の一方
から、上記接合面を貫通し、上記第２導電型層または第
１導電型層に達する溝と、 上記第１導電型層の対向面または第２導電型層の対向面
の一方に、上記溝を挟んで設けられた正電極および負電
極と、 上記正電極および負電極に設けられた突起電極とを備
え、 上記接合面近傍で発生し、上記第１導電型層の対向面ま
たは第２導電型層の対向面の他方を通過した光を外部に
取り出すようにしたことを特徴とする半導体発光装置。1. A semiconductor light-emitting device that emits light from the vicinity of a joint surface between a first conductivity type layer and a second conductivity type layer, the opposing surface of the first conductivity type layer facing the joint surface, or the joint surface. A groove penetrating the joint surface from one of the facing surfaces of the second conductivity type layer facing the first contact layer to reach the second conductivity type layer or the first conductivity type layer, and the facing surface of the first conductivity type layer or One of the facing surfaces of the second conductivity type layer is provided with a positive electrode and a negative electrode provided with the groove sandwiched therebetween, and a protruding electrode provided on the positive electrode and the negative electrode. A semiconductor light emitting device, wherein light passing through the other surface of the first conductivity type layer or the other surface of the second conductivity type layer is extracted to the outside.
て、上記溝が上記溝の底面に向かって先細になるよう
に、上記溝の側面を上記接合面に対して傾斜面にし、上
記接合面近傍で発生して上記接合面に略平行に進行する
光を、上記傾斜面で反射して、上記他方の対向面に向か
わせるようにしたことを特徴とする半導体発光装置。2. The semiconductor light emitting device according to claim 1, wherein a side surface of the groove is inclined with respect to the joint surface so that the groove is tapered toward a bottom surface of the groove, and the joint surface is formed. A semiconductor light emitting device, characterized in that light generated in the vicinity and traveling substantially parallel to the bonding surface is reflected by the inclined surface and directed toward the other facing surface.
置において、発光した光を外部に取り出すための光出射
面に反射防止膜を形成したことを特徴とする半導体発光
装置。3. The semiconductor light emitting device according to claim 1 or 2, wherein an antireflection film is formed on a light emitting surface for extracting emitted light to the outside.
半導体発光装置において、上記一方の対向面または上記
溝の側面の少なくとも一方に、反射膜を設け、上記一方
の対向面に向かう光または上記溝の側面に向かう光の少
なくとも一方を、上記反射膜で反射して上記他方の対向
面に向かわせるようにしたことを特徴とする半導体発光
装置。4. The semiconductor light emitting device according to claim 1, wherein a reflective film is provided on at least one of the one opposing surface or the side surface of the groove, and the reflecting film is provided toward the one opposing surface. A semiconductor light-emitting device, characterized in that at least one of light and light traveling toward the side surface of the groove is reflected by the reflective film and directed toward the other facing surface.
近傍から光を発生させる半導体発光装置において、 上記接合面に対向する上記第１導電型層の対向面または
上記接合面に対向する上記第２導電型層の対向面の一方
から、上記接合面を貫通し、上記第２導電型層または第
１導電型層に達する溝と、 上記溝底面に形成され、上記溝の側面との間に所定の間
隔を隔てて上記接合面を横切る第２導電型または第１導
電型の凸部と、 上記第１導電型層の対向面または第２導電型層の対向面
の一方と、上記凸部の上面とに、上記溝の側面と凸部と
の間の空間を挟んで設けられた正電極および負電極と、 上記正電極および負電極に設けられた突起電極とを備
え、 上記接合面近傍で発生し、上記第１導電型層の対向面ま
たは第２導電型層の対向面の他方を通過した光を外部に
取り出すようにしたことを特徴とする半導体発光装置。5. A semiconductor light-emitting device which emits light from the vicinity of a joint surface between a first conductivity type layer and a second conductivity type layer, the opposing surface of the first conductivity type layer facing the joint surface or the joint surface. A groove penetrating the joint surface from one of the facing surfaces of the second conductivity type layer facing the first contact layer to reach the second conductivity type layer or the first conductivity type layer, and the groove formed on the groove bottom surface. One of a convex portion of the second conductivity type or the first conductivity type that crosses the bonding surface with a predetermined distance between the side surface and one of the facing surface of the first conductivity type layer and the facing surface of the second conductivity type layer. And a positive electrode and a negative electrode provided on the upper surface of the convex portion with a space between the side surface of the groove and the convex portion interposed therebetween, and a protruding electrode provided on the positive electrode and the negative electrode. Generated in the vicinity of the bonding surface, other than the facing surface of the first conductivity type layer or the facing surface of the second conductivity type layer. The semiconductor light-emitting device, characterized in that they were taken out to the outside light passing through the.
て、上記溝の側面と上記凸部との間の空間が上記溝の底
面に向かって先細になるように、上記溝の側面及び上記
凸部の側面が上記接合面に対して傾斜面に形成されてお
り、上記接合面近傍で発生して上記接合面に略平行に進
行する光を、上記傾斜面で反射して、上記他方の対向面
に向かわせるようにしたことを特徴とする半導体発光装
置。6. The semiconductor light emitting device according to claim 5, wherein the space between the side surface of the groove and the convex portion is tapered toward the bottom surface of the groove, and the side surface of the groove and the convex portion. The side surface of the portion is formed as an inclined surface with respect to the joint surface, and light generated in the vicinity of the joint surface and traveling substantially parallel to the joint surface is reflected by the slant surface to oppose the other surface. A semiconductor light emitting device characterized in that it is made to face a surface.
置において、発光した光を外部に取り出すための光出射
面に反射防止膜を形成したことを特徴とする半導体発光
装置。7. The semiconductor light emitting device according to claim 5 or 6, wherein an antireflection film is formed on a light emitting surface for extracting emitted light to the outside.
半導体発光装置において、上記一方の対向面または上記
溝の側面または上記凸部の側面のうちの少なくとも１つ
に反射膜を設け、上記一方の対向面に向かう光または上
記溝の側面に向かう光または上記凸部の側面に向かう光
のうちの少なくとも１つを、上記反射膜で反射して上記
他方の対向面に向かわせるようにしたことを特徴とする
半導体発光装置。8. The semiconductor light emitting device according to claim 5, wherein a reflective film is provided on at least one of the facing surface on one side, the side surface of the groove, or the side surface of the convex portion. , At least one of the light directed to the one facing surface, the light directed to the side surface of the groove, and the light directed to the side surface of the convex portion is reflected by the reflective film and directed to the other facing surface. A semiconductor light-emitting device characterized in that
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22177293A JPH06318731A (en) | 1993-03-12 | 1993-09-07 | Semiconductor light emitting device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5-51878 | 1993-03-12 | ||
| JP5187893 | 1993-03-12 | ||
| JP22177293A JPH06318731A (en) | 1993-03-12 | 1993-09-07 | Semiconductor light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06318731A true JPH06318731A (en) | 1994-11-15 |
Family
ID=26392466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22177293A Pending JPH06318731A (en) | 1993-03-12 | 1993-09-07 | Semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06318731A (en) |
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