JP3326545B2 - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

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Publication number
JP3326545B2
JP3326545B2 JP23648394A JP23648394A JP3326545B2 JP 3326545 B2 JP3326545 B2 JP 3326545B2 JP 23648394 A JP23648394 A JP 23648394A JP 23648394 A JP23648394 A JP 23648394A JP 3326545 B2 JP3326545 B2 JP 3326545B2
Authority
JP
Japan
Prior art keywords
light
layer
substrate
semiconductor
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP23648394A
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Japanese (ja)
Other versions
JPH08102549A (en
Inventor
博 田尻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
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Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP23648394A priority Critical patent/JP3326545B2/en
Publication of JPH08102549A publication Critical patent/JPH08102549A/en
Application granted granted Critical
Publication of JP3326545B2 publication Critical patent/JP3326545B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【産業上の利用分野】本願発明は、たとえば青色発光Ｌ
ＥＤのようにサファイア基板などの透光性基板が用いら
れるタイプの半導体発光素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention
The present invention relates to a semiconductor light emitting device of a type using a light-transmitting substrate such as a sapphire substrate such as an ED.

【０００２】[0002]

【従来の技術】近年においては、サファイア基板上に窒
化ガリウム系の半導体層を形成することにより、青色の
発光が得られるようにした青色ＬＥＤが種々開発されて
いるが、上記サファイア基板は透明基板である。したが
って、ｎ型およびｐ型の両半導体層の間に形成された発
光層から発せられた光は、基板表面上に積層された半導
体層のうち最表層の部位や発光層の側面部から外部へ出
射する他、透明基板を透過して透明基板の下方向へも出
射する。これでは、ＬＥＤランプを製作する場合におい
て、半導体発光素子の上面側において高い発光輝度が得
られない。また、光が様々な方向に散乱し、一定の方向
性をもたせることもできない。2. Description of the Related Art In recent years, various blue LEDs have been developed in which a gallium nitride-based semiconductor layer is formed on a sapphire substrate so as to emit blue light. It is. Accordingly, light emitted from the light emitting layer formed between the n-type and p-type semiconductor layers is transmitted from the outermost surface portion of the semiconductor layers stacked on the substrate surface or the side surface of the light emitting layer to the outside. In addition to the light emission, the light is transmitted through the transparent substrate and emitted downward of the transparent substrate. In this case, when manufacturing an LED lamp, high light emission luminance cannot be obtained on the upper surface side of the semiconductor light emitting element. Further, light is scattered in various directions, and it is not possible to give a certain direction.

【０００３】そこで、従来では、皿状に形成された金属
製の反射器内に半導体発光素子を配置させてダイボンド
することにより、透光性基板の裏面などから出射する光
を反射器によって一定方向へ反射させるようにしてい
た。Therefore, conventionally, a semiconductor light emitting element is arranged in a dish-shaped metal reflector and die-bonded, so that light emitted from the back surface of the light-transmitting substrate or the like is directed in a certain direction by the reflector. To reflect light.

【０００４】[0004]

【発明が解決しようとする課題】しかしながら、上記従
来の反射器を用いる手段では、反射器を別途必要とする
ために、ＬＥＤランプを製造する際の全体の部品点数が
増加し、その製造コストが高価となる難点があった。ま
た、反射器のサイズは半導体発光素子よりもかなり大き
なサイズに形成する必要がある。したがって、この反射
器を組み込む必要性から、ＬＥＤランプ全体が大型化す
るという難点も生じていた。However, in the above-described means using a reflector, the number of parts in manufacturing an LED lamp is increased because a reflector is separately required, and the manufacturing cost is reduced. There was a disadvantage that it was expensive. Also, the size of the reflector needs to be considerably larger than that of the semiconductor light emitting device. Therefore, the necessity of incorporating the reflector has also caused a problem that the entire LED lamp is increased in size.

【０００５】本願発明は、このような事情のもとで考え
出されたものであって、透光性基板を用いた半導体発光
素子において透光性基板の裏面などから光が無駄に出射
されるようなことを反射器を用いることなく解消し、ま
たは減少させるようにし、もって半導体発光素子から発
せられる光に一定の方向性をもたせ、発光輝度を高める
ことをその課題としている。The present invention has been made under such circumstances, and in a semiconductor light emitting device using a light-transmitting substrate, light is unnecessarily emitted from the back surface of the light-transmitting substrate. It is an object of the present invention to eliminate or reduce such a problem without using a reflector, thereby giving light emitted from a semiconductor light emitting element a certain directionality, and increasing light emission luminance.

【０００６】[0006]

【課題を解決するための手段】上記の課題を解決するた
め、本願発明では、次の技術的手段を講じている。Means for Solving the Problems To solve the above problems, the present invention takes the following technical means.

【０００７】本願の請求項１に記載の発明は、電気絶縁
性を有する透光性基板の表面上に、ｎ型半導体層、発光
層、およびｐ型半導体層から構成される積層部が形成さ
れている半導体発光素子であって、上記透光性基板の裏
面および各側面には、上記発光層から発せられて上記透
光性基板を透過してくる光を反射させるための光反射膜
が形成されており、この光反射膜は、導電性材料からな
るとともに、上記積層部のうち、上記透光性基板の表面
上において最下層に位置するｎ型またはｐ型の半導体層
に導通していることを特徴としている。According to the first aspect of the present invention, a laminated portion composed of an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer is formed on a surface of a light-transmitting substrate having electrical insulation. A light reflecting film for reflecting light emitted from the light emitting layer and passing through the light transmitting substrate is formed on the back surface and each side surface of the light transmitting substrate. The light reflecting film is made of a conductive material, and is electrically connected to the n-type or p-type semiconductor layer located at the lowermost layer on the surface of the light-transmitting substrate in the laminated portion. It is characterized by:

【０００８】本願の請求項２に記載の発明は、上記透光
性基板の各側面は、これら各側面に形成されている光反
射膜が傾斜してその内面側が透光性基板の表面側を向く
ように傾斜している。According to a second aspect of the present invention, in each of the side surfaces of the light-transmitting substrate, the light-reflecting film formed on each of the side surfaces is inclined so that the inner surface thereof faces the surface of the light-transmitting substrate. It is inclined to face.

【０００９】[0009]

【００１０】[0010]

【発明の作用および効果】上記請求項１に記載の発明に
おいては、少なくとも透光性基板の裏面または各側面に
は光反射膜が形成されているために、発光層から透光性
基板の裏面側方向に発せられた光を、この光反射膜によ
って透光性基板の表面側へ反射させることができる。し
たがって、透光性基板の裏面または側面から漏れを生じ
る光量を減少させて、透光性基板の積層部の最表層の部
位から出射する光量を増加させることができる。According to the first aspect of the present invention, since the light reflecting film is formed on at least the back surface or each side surface of the light-transmitting substrate, the light-emitting layer is shifted from the light-emitting layer to the back surface of the light-transmitting substrate. The light emitted in the side direction can be reflected by the light reflecting film to the front side of the light transmitting substrate. Therefore, the amount of light that leaks from the rear surface or the side surface of the light-transmitting substrate can be reduced, and the amount of light emitted from the outermost layer of the laminated portion of the light-transmitting substrate can be increased.

【００１１】その結果、従来に比較して、発光輝度を高
め、またその光に一定の方向性をもたせることができ
る。したがって、発光ランプを製造する場合において
は、発光輝度の向上などを目的として必ずしも皿状など
の反射器を用いる必要はなくなり、部品点数の削減によ
る発光ランプの製造作業の容易化、ならびに発光ランプ
の小型化を図ることができるという格別な効果が得られ
る。As a result, as compared with the related art, it is possible to increase the light emission luminance and to give the light a certain direction. Therefore, when manufacturing a light-emitting lamp, it is not always necessary to use a dish-shaped reflector for the purpose of improving the light emission luminance, etc. A special effect that the size can be reduced can be obtained.

【００１２】光反射膜は、導電性材料によって形成さ
れ、しかもこの光反射膜が絶縁基板としての透光性基板
の表面に形成された積層部のうち最下層に位置する半導
体層に導通しているために、この光反射膜を積層部の最
下層に位置する半導体層についての電極として機能させ
ることが可能となる。したがって、最下層の半導体層に
対して電極を別途設ける必要を無くし、電極形成作業の
簡素化を図ることができる。The light reflecting film is formed of a conductive material, and the light reflecting film is electrically connected to the lowermost semiconductor layer in the laminated portion formed on the surface of the light transmitting substrate as the insulating substrate. Therefore, this light reflection film can function as an electrode for the semiconductor layer located at the lowermost layer of the laminated portion. Therefore, there is no need to separately provide an electrode for the lowermost semiconductor layer, and the electrode forming operation can be simplified.

【００１３】このように透光性基板の裏面に形成されて
いる光反射膜を電極として機能させることができれば、
この光反射膜をリードフレームなどに導電接着させるこ
とによって、最下層の半導体層に対して金線を用いたワ
イヤボンディング作業を行う必要が無くなる。したがっ
て、半導体発光素子のボンディング作業が容易となり、
発光ランプの製造作業能率を一層高めることもできる。If the light reflecting film formed on the rear surface of the light transmitting substrate can function as an electrode,
By electrically bonding this light reflecting film to a lead frame or the like, it becomes unnecessary to perform a wire bonding operation using a gold wire on the lowermost semiconductor layer. Therefore, the bonding work of the semiconductor light emitting element becomes easy,
The efficiency of the manufacturing operation of the light emitting lamp can be further improved.

【００１４】請求項２に記載の発明においては、透光性
基板を透過した光を効率よく透光性基板の表面側へ反射
させることができ、半導体発光素子の表面側における発
光輝度を一層高めることが可能となる。According to the second aspect of the present invention, the light transmitted through the light-transmitting substrate can be efficiently reflected to the front side of the light-transmitting substrate, and the light emission luminance on the front side of the semiconductor light-emitting element can be further increased. It becomes possible.

【００１５】[0015]

【実施例の説明】以下、本願発明の好ましい実施例を、
図面を参照しつつ具体的に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below.
This will be specifically described with reference to the drawings.

【００１６】図１は、本願発明に係る半導体発光素子の
一例を示す断面図である。FIG. 1 is a sectional view showing an example of a semiconductor light emitting device according to the present invention.

【００１７】図１に示す半導体発光素子１は、青色ＬＥ
Ｄとして構成されたものであり、透光性基板としてのサ
ファイア基板２の表面に、ｎ型半導体層３、発光層４、
およびｐ型半導体層５から構成される積層部６を形成し
たものである。また、この積層部６およびサファイア基
板２の各側面やサファイア基板２の裏面には、光反射膜
７が形成されている。The semiconductor light emitting device 1 shown in FIG.
D, a n-type semiconductor layer 3, a light-emitting layer 4, and a sapphire substrate 2 as a light-transmitting substrate.
And a laminated portion 6 composed of a p-type semiconductor layer 5. A light reflection film 7 is formed on each side surface of the laminated portion 6 and the sapphire substrate 2 and on the back surface of the sapphire substrate 2.

【００１８】上記積層部６は、サファイア基板２の表面
上に窒化ガリウムのバッファ層８を成長させ、その表面
に順次ｎ型半導体層３などを形成したものである。積層
部６の具体的な構成としては、ｎ型半導体層３が、ｎ型
ＧａＮ層３１、およびｎ型ＡｌＧａＮ層３２（Ａｌ0.2
Ｇａ0.8 Ｎ）によって形成されている。発光層４は、Ｉ
ｎＧａＮ層（Ｉｎ0.15Ｇａ0.85Ｎ）によって形成されて
いる。また、ｐ型半導体層５は、ｐ型ＡｌＧａＮ層５１
（Ａｌ0.2 Ｇａ0.8 Ｎ）、およびｐ型ＧａＮ層５２によ
って形成されている。このうち最表層のｐ型ＧａＮ層５
２の上面には、Ｔｉ，Ａｕ，Ｎｉ製などの電極９ａが形
成されている。なお、上記各層の厚みは、下層側から各
層３１，３２，４，５１，５２の順に、たとえば３μ
ｍ、３００ｎｍ、５０ｎｍ、３００ｎｍ、１５０ｎｍに
設定されている。The laminated portion 6 is formed by growing a buffer layer 8 of gallium nitride on the surface of the sapphire substrate 2 and sequentially forming the n-type semiconductor layer 3 on the surface. As a specific configuration of the stacked unit 6, the n-type semiconductor layer 3 includes the n-type GaN layer 31 and the n-type AlGaN layer 32 (Al 0.2
Ga 0.8 N). The light emitting layer 4 is made of I
It is formed by an nGaN layer (In 0.15 Ga 0.85 N). Further, the p-type semiconductor layer 5 includes a p-type AlGaN layer 51.
(Al 0.2 Ga 0.8 N) and the p-type GaN layer 52. Of these, the outermost p-type GaN layer 5
An electrode 9a made of Ti, Au, Ni, or the like is formed on the upper surface of 2. The thickness of each layer is, for example, 3 μm in the order of the layers 31, 32, 4, 51, and 52 from the lower layer side.
m, 300 nm, 50 nm, 300 nm, and 150 nm.

【００１９】上記サファイア基板２は、その厚さが１０
分の数ｍｍ程度であり、透光性を有する他、電気絶縁性
を有するものである。このサファイア基板２は、たとえ
ば平面矢視において一辺が０．５ｍｍ程度の正方形状の
チップに形成されているが、その各側面２０ｂはテーパ
状に形成されている。The sapphire substrate 2 has a thickness of 10
It is about a few millimeters, and has a light-transmitting property and an electrical insulating property. The sapphire substrate 2 is formed, for example, as a square chip having a side of about 0.5 mm in a plan arrow, and each side surface 20b is formed in a tapered shape.

【００２０】上記光反射膜７の具体的な材質としては、
光の反射率が比較的高く、かつ導電性を有するＡｌ，Ｃ
ｕ，Ｃｒなどが採用されている。この光反射膜７は、上
記サファイア基板２の裏面２０ａ、テーパ状の各側面２
０ｂ、および積層部６の各側面にわたって形成されてい
る。ただし、積層部６のうち最下層のｎ型ＧａＮ層３１
を除く他の半導体層の側面には、酸化シリコンなどの絶
縁膜１０が形成されており、これにより上記光反射膜７
が積層部６のｎ型ＧａＮ層３１以外の半導体層に導通し
ないようになっている。これに対し、最下層のｎ型Ｇａ
Ｎ層３１の側面には絶縁膜１０は設けられておらず、上
記光反射膜７はこのｎ型ＧａＮ層３１の側面と導通接触
している。Specific examples of the material of the light reflection film 7 include:
Al, C having relatively high light reflectivity and conductivity
u, Cr and the like are employed. The light reflecting film 7 is formed on the back surface 20 a of the sapphire substrate 2 and the tapered side surfaces 2.
0b and each side surface of the laminated portion 6. However, the lowermost n-type GaN layer 31 of the laminated portion 6
An insulating film 10 such as silicon oxide is formed on the side surfaces of the other semiconductor layers except for the light reflecting film 7.
Are not conducted to the semiconductor layers other than the n-type GaN layer 31 of the laminated portion 6. On the other hand, the lowermost n-type Ga
The insulating film 10 is not provided on the side surface of the N layer 31, and the light reflection film 7 is in conductive contact with the side surface of the n-type GaN layer 31.

【００２１】上記半導体発光素子１の製造方法の具体例
としては、まず有機金属化学気相成長法（ＭＯＣＶＤ
法）によって、サファイア基板２上に所定成分の単結晶
を順次成長させて積層部６を形成する。次いで、サファ
イア基板２の各側面２０ｂをテーパ状に形成する加工
や、上記積層部６の側面の所定箇所に絶縁膜１０を形成
する処理を行う。サファイア基板２の各側面２０ｂをテ
ーパ状に形成する加工は、エッチングにより行える他、
サファイア製のウエハをダイシングするためのダイヤモ
ンド刃の刃先をテーパ状に形成しておくことによっても
行える。そして、その後は、上記積層部６の側面や、サ
ファイア基板２の裏面２０ａや各側面２０ｂに光反射膜
７を形成するためのＡｌなどの材料をスパッタリングな
どによって被着させ、成膜させればよい。As a specific example of the method for manufacturing the semiconductor light emitting device 1, first, a metal organic chemical vapor deposition (MOCVD) method is used.
A single crystal of a predetermined component is sequentially grown on the sapphire substrate 2 to form the laminated portion 6 by the method (1). Next, a process of forming each side surface 20b of the sapphire substrate 2 into a tapered shape, and a process of forming the insulating film 10 at a predetermined position on the side surface of the laminated portion 6 are performed. The process of forming each side surface 20b of the sapphire substrate 2 in a tapered shape can be performed by etching,
It can also be performed by forming the cutting edge of a diamond blade for dicing a sapphire wafer into a tapered shape. Then, after that, a material such as Al for forming the light reflection film 7 is applied to the side surface of the laminated portion 6 or the back surface 20a or each side surface 20b of the sapphire substrate 2 by sputtering or the like to form a film. Good.

【００２２】上記構成の半導体発光素子１を用いて発光
ランプを製作するには、たとえば図２に示すように、リ
ードフレーム２５のリード２５ａ上に半導体発光素子１
を載置し、光反射膜７を導電性接着剤を介して接着させ
ればよい。光反射膜７は、最下層のｎ型ＧａＮ層３１と
導通しているために、これによりｎ型ＧａＮ層３１をリ
ード２５ａに導通させることができる。したがって、半
導体発光素子１のワイヤボンディングは、１本の金線２
６を用いて電極９ａをリード２５ｂに接続させるだけで
よく、ボンディング作業が容易となる。In order to manufacture a light-emitting lamp using the semiconductor light-emitting element 1 having the above structure, for example, as shown in FIG.
May be placed, and the light reflection film 7 may be bonded via a conductive adhesive. Since the light reflection film 7 is electrically connected to the lowermost n-type GaN layer 31, the n-type GaN layer 31 can be electrically connected to the lead 25a. Therefore, the wire bonding of the semiconductor light emitting element 1 is performed by one gold wire 2.
It is only necessary to connect the electrode 9a to the lead 25b by using 6, and the bonding operation becomes easy.

【００２３】上記ダイボンディングが行われた状態にお
いて、半導体発光素子１に電流供給を行うと、発光層４
が青色に発光するが、その光は最表層のｐ型ＧａＮ層５
２の部位から上方向へ出射する他、下方向や水平方向に
も発せられる。ところが、下方向の光がサファイア基板
２を透過すると、このサファイア基板２の裏面２ａや側
面２ｂに形成された光反射膜７によって上方向に反射さ
れる。When current is supplied to the semiconductor light emitting device 1 in the state where the die bonding is performed, the light emitting layer 4
Emits blue light, and the light is emitted from the outermost p-type GaN layer 5.
In addition to being emitted upward from the portion 2, it is also emitted downward or horizontally. However, when light in the downward direction passes through the sapphire substrate 2, the light is reflected upward by the light reflection film 7 formed on the back surface 2 a and the side surface 2 b of the sapphire substrate 2.

【００２４】とくに、サファイア基板２の各側面２ｂに
形成された光反射膜７は、その内面側がサファイア基板
２の表面側を向く傾斜状に形成されているから、これら
各側面２ｂに到達した光は、その傾斜状の光反射膜７に
よって効率よく上方向に反射され、最表層のｐ型ＧａＮ
層５２の部位から上方へ出射する。さらに、水平方向の
光も、積層部６の各側面に設けられた光反射膜７によっ
て内側に反射されることにより、外部へ漏れを生じるこ
とが防止され、半導体発光素子１内における反射を繰り
返すことにより、やはり最表層のｐ型ＧａＮ層５２の部
位から上方へ出射する。In particular, since the light reflecting film 7 formed on each side surface 2b of the sapphire substrate 2 is formed so that the inner surface side is inclined so as to face the front surface side of the sapphire substrate 2, the light reaching the respective side surfaces 2b is formed. Is efficiently reflected upward by the inclined light reflecting film 7, and the outermost p-type GaN
The light is emitted upward from the portion of the layer 52. Furthermore, the light in the horizontal direction is also reflected inward by the light reflection film 7 provided on each side surface of the laminated portion 6, thereby preventing leakage to the outside and repeating reflection in the semiconductor light emitting element 1. As a result, the light is emitted upward from the portion of the p-type GaN layer 52 as the outermost layer.

【００２５】結局、上記発光層４から発せられた光は、
半導体発光素子１の側面部や下面部から漏れを生じるこ
となく、最表層のｐ型ＧａＮ層５２の部位から上方向に
出射する。したがって、半導体発光素子１の上面側にお
ける発光輝度を高めることができる。これは、赤色や緑
色などの発光ＬＥＤに比較すると、発光輝度を高める点
で技術的な難点を有していた青色発光ＬＥＤとしては、
とくに有意義である。After all, the light emitted from the light emitting layer 4 is
The light is emitted upward from the portion of the outermost p-type GaN layer 52 without causing leakage from the side surface and the lower surface of the semiconductor light emitting device 1. Therefore, the light emission luminance on the upper surface side of the semiconductor light emitting element 1 can be increased. This is a blue light-emitting LED that had technical difficulties in increasing the light emission luminance compared to red and green light-emitting LEDs,
Especially meaningful.

【００２６】また、上記したように光に上向きの方向性
を持たせて、その発光輝度を高めることができれば、発
光ランプを製作するに際し、従来用いられていた皿状の
反射器を用いる必要はなくなる。したがって、発光ラン
プの製作の容易化、および小型化も図れる。If it is possible to increase the light emission luminance by giving light upward direction as described above, it is not necessary to use a dish-shaped reflector which has been conventionally used when manufacturing a light-emitting lamp. Disappears. Therefore, the manufacture of the light-emitting lamp can be facilitated and the size can be reduced.

【００２７】なお、上記実施例では、光反射膜７をサフ
ァイア基板２に設けるだけではなく、積層部６の側面に
も形成したが、本願発明は必ずしもこれに限定されな
い。たとえば、図３に示すように、光反射膜７を積層部
６の側面には形成せず、サファイア基板２の裏面２ａや
各側面２ｂにのみ形成してもよい。この場合には、発光
層４の側面から横方向へ発せられる光を光反射膜７によ
って反射させることができず、光の漏れを生じさせてし
まうが、発光層４から下方向に発せられる光については
光反射膜７によって上方向に反射させることができ、や
はり高い発光輝度を得ることが可能である。In the above embodiment, the light reflection film 7 is formed not only on the sapphire substrate 2 but also on the side surface of the laminated portion 6, but the present invention is not necessarily limited to this. For example, as shown in FIG. 3, the light reflection film 7 may not be formed on the side surface of the laminated portion 6, but may be formed only on the back surface 2 a of the sapphire substrate 2 or on each side surface 2 b. In this case, the light emitted laterally from the side surface of the light emitting layer 4 cannot be reflected by the light reflecting film 7 and causes light leakage. Can be reflected upward by the light reflection film 7, and high emission luminance can also be obtained.

【００２８】また、積層部６の全体の厚み寸法は、たと
えば４μｍに満たない数値であるのに対し、サファイア
基板２の厚みは数百μｍ程度であり、積層部６に比較す
るとサファイア基板２は圧倒的に大きな厚みである。こ
のため、発光層４の側面から横方向へ発せられる光の量
は、サファイア基板２を透過して下方向などに発せられ
る他の光の量に比較するとかなり小さいのが実情であ
る。したがって、発光層４の側面から横方向へ発せられ
る光を反射させなくても、その発光輝度が、図１で示し
た実施例の場合に比較して大幅に低下するようなことは
ない。The thickness of the entire laminated portion 6 is, for example, less than 4 μm, whereas the thickness of the sapphire substrate 2 is about several hundred μm. It is overwhelmingly thick. For this reason, the amount of light emitted laterally from the side surface of the light emitting layer 4 is considerably smaller than the amount of other light transmitted through the sapphire substrate 2 and emitted downward. Therefore, even if the light emitted from the side surface of the light emitting layer 4 in the lateral direction is not reflected, the light emission luminance is not significantly reduced as compared with the embodiment shown in FIG.

【００２９】[0029]

【００３０】さらに、上記図１および図３に示した各実
施例では、サファイア基板２の各側面２ｂを傾斜状に形
成しているが（請求項２に対応）、請求項１に記載の本
願発明はこれに限定されない。たとえば図４に示すよう
に、サファイア基板２の各側面２ｂを傾斜状に形成せ
ず、裏面２ａと直交する側面としてもよい。このような
構成であっても、サファイア基板２を透過してくる光を
光反射膜７によって反射させることでき、外部への光の
漏れを防止することてきる。そして、多数回の光反射が
繰り返されることにより、サファイア基板２の上側方向
へ光を出射させることが可能である。Further, in each of the embodiments shown in FIGS. 1 and 3, each side surface 2b of the sapphire substrate 2 is formed to be inclined (corresponding to claim 2). The invention is not limited to this. For example, as shown in FIG. 4, each side surface 2b of the sapphire substrate 2 may not be formed in an inclined shape, and may be a side surface orthogonal to the back surface 2a. Even with such a configuration, light transmitted through the sapphire substrate 2 can be reflected by the light reflection film 7, and leakage of light to the outside can be prevented. By repeating light reflection many times, light can be emitted upward from the sapphire substrate 2.

【００３１】[0031]

【００３２】[0032]

【００３３】さらに、上記実施例では、青色発光ＬＥＤ
を一例として説明したが、本願発明はこれに限定され
ず、透光性基板を用いた半導体発光素子全般に適用可能
である。したがって、ｎ型半導体層、発光層、およびｐ
型半導体層などの各部の具体的な材質なども限定され
ず、各部の具体的な構成は種々に設計変更自在である。Further, in the above embodiment, the blue light emitting LED
Has been described as an example, but the present invention is not limited to this, and can be applied to all semiconductor light emitting devices using a translucent substrate. Therefore, the n-type semiconductor layer, the light emitting layer, and p
The specific material of each part such as the mold semiconductor layer is not limited, and the specific configuration of each part can be freely changed in various ways.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本願発明に係る半導体発光素子の一例を示す断
面図。FIG. 1 is a sectional view showing an example of a semiconductor light emitting device according to the present invention.

【図２】図１に示す半導体発光素子のダイボンディング
の一例を示す説明図。FIG. 2 is an explanatory view showing an example of die bonding of the semiconductor light emitting device shown in FIG.

【図３】本願発明に係る半導体発光素子の他の例を示す
断面図。FIG. 3 is a sectional view showing another example of the semiconductor light emitting device according to the present invention.

【図４】本願発明に係る半導体発光素子の他の例を示す
断面図。FIG. 4 is a sectional view showing another example of the semiconductor light emitting device according to the present invention.

【符号の説明】[Explanation of symbols]

１ 半導体発光素子 ２ 透光性基板（サファイア基板） ３ ｎ型半導体層 ４ 発光層 ５ ｐ型半導体層 ６ 積層部 ７ 光反射膜 REFERENCE SIGNS LIST 1 semiconductor light-emitting element 2 light-transmitting substrate (sapphire substrate) 3 n-type semiconductor layer 4 light-emitting layer 5 p-type semiconductor layer 6 laminated portion 7 light reflecting film

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 33/00 ＪＩＣＳＴファイル（ＪＯＩＳ)────────────────────────────────────────────────── ─── Continued on front page (58) Field surveyed (Int. Cl. 7 , DB name) H01L 33/00 JICST file (JOIS)

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 電気絶縁性を有する透光性基板の表面上
に、ｎ型半導体層、発光層、およびｐ型半導体層から構
成される積層部が形成されている半導体発光素子であっ
て、上記透光性基板の裏面および各側面には、 上記発光層か
ら発せられて上記透光性基板を透過してくる光を反射さ
せるための光反射膜が形成されており、 この光反射膜は、導電性材料からなるとともに、上記積
層部のうち、上記透光性基板の表面上において最下層に
位置するｎ型またはｐ型の半導体層に導通している こと
を特徴とする、半導体発光素子。1. A semiconductor light-emitting device comprising: a light-transmitting substrate having electrical insulation; and a laminated portion including an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer formed on a surface of the light-transmitting substrate. on the back and each side of the transmissive substrate is emitted from the light-emitting layer are optically reflective film formation for reflecting the light transmitted through the the transmissive substrate, the light reflecting film Made of a conductive material, and
Of the layer portion, the lowermost layer on the surface of the light-transmitting substrate
A semiconductor light-emitting element, which is electrically connected to a located n-type or p-type semiconductor layer . 【請求項２】 上記透光性基板の各側面は、これら各側
面に形成されている光反射膜が傾斜してその内面側が透
光性基板の表面側を向くように傾斜している、請求項１
に記載の半導体発光素子。 2. Each side surface of the light-transmitting substrate is connected to each of these side surfaces.
The light reflection film formed on the surface is inclined and the inner surface side is transparent.
It is inclined so as to face the front surface side of the light substrate, according to claim 1
Semiconductor light-emitting element described.
JP23648394A 1994-09-30 1994-09-30 Semiconductor light emitting device Expired - Fee Related JP3326545B2 (en)

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Application Number Priority Date Filing Date Title
JP23648394A JP3326545B2 (en) 1994-09-30 1994-09-30 Semiconductor light emitting device

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JPH08102549A JPH08102549A (en) 1996-04-16
JP3326545B2 true JP3326545B2 (en) 2002-09-24

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