JP3388810B2 - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JP3388810B2 JP3388810B2 JP14865693A JP14865693A JP3388810B2 JP 3388810 B2 JP3388810 B2 JP 3388810B2 JP 14865693 A JP14865693 A JP 14865693A JP 14865693 A JP14865693 A JP 14865693A JP 3388810 B2 JP3388810 B2 JP 3388810B2
- Authority
- JP
- Japan
- Prior art keywords
- reaction tube
- cap
- boat
- furnace
- semiconductor manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体製造装置の１つ
であり、拡散処理、酸化膜生成等の処理を行う縦型炉に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and relates to a vertical furnace for carrying out processing such as diffusion processing and oxide film formation.
【０００２】[0002]
【従来の技術】図２に於いて縦型炉の概略を説明する。2. Description of the Related Art An outline of a vertical furnace will be described with reference to FIG.
【０００３】石英製の反応管１はヒータユニット２内に
嵌装され、前記反応管１とヒータユニット２との間には
石英製均熱管３が設けられている。前記反応管１には上
部に連通する石英製ガス導入管４が設けられ、又反応管
１の下部には石英製排ガス口５が設けられ、該排ガス口
５には排気管６が接続されている。前記反応管１内には
ウェーハ７が石英製ボート８により水平姿勢で多段に保
持されて装入される。該ボート８は石英製のボートキャ
ップ１１を介して前記炉口フランジ９に載設されてい
る。又、前記ボートキャップ１１のフランジには炉口部
を気密にシールする為のシールリング１２が設けられて
いる。A reaction tube 1 made of quartz is fitted in a heater unit 2, and a soaking tube 3 made of quartz is provided between the reaction tube 1 and the heater unit 2. The reaction tube 1 is provided with a quartz gas introducing pipe 4 communicating with the upper part thereof, and a quartz exhaust gas port 5 is provided in the lower part of the reaction pipe 1, and an exhaust pipe 6 is connected to the exhaust gas port 5. There is. Wafers 7 are loaded into the reaction tube 1 while being held horizontally in multiple stages by a quartz boat 8. The boat 8 is mounted on the furnace port flange 9 via a boat cap 11 made of quartz. A seal ring 12 is provided on the flange of the boat cap 11 to hermetically seal the furnace opening.
【０００４】図中、９は反応管１の炉口１０を気密に閉
塞する炉口フランジ、１９は半導体製造装置の縦型炉が
設けられる炉体基板である。In the figure, 9 is a furnace port flange for hermetically closing the furnace port 10 of the reaction tube 1, and 19 is a furnace body substrate on which a vertical furnace of a semiconductor manufacturing apparatus is provided.
【０００５】ヒータユニット２で反応管１内部が加熱さ
れ、前記ガス導入管４より反応ガスが導入され、前記ウ
ェーハ７表面への成膜、熱拡散等熱処理が行われ、導入
されたガスは前記排気管６より排気される。The inside of the reaction tube 1 is heated by the heater unit 2, the reaction gas is introduced from the gas introduction tube 4, and film formation on the surface of the wafer 7 and heat treatment such as thermal diffusion are performed. The gas is exhausted from the exhaust pipe 6.
【０００６】[0006]
【発明が解決しようとする課題】上記した縦型炉の炉構
造では、反応管１、ボート８、ボートキャップ１１が石
英製であることから、加熱温度を石英の耐熱温度の１１
５０℃迄しか加熱できないという問題があった。In the furnace structure of the vertical furnace described above, since the reaction tube 1, the boat 8 and the boat cap 11 are made of quartz, the heating temperature is 11
There was a problem that it could only be heated to 50 ° C.
【０００７】本発明は斯かる実情に鑑み、より高温の加
熱温度が達成できる炉構造を提供しようとするものであ
る。In view of the above situation, the present invention aims to provide a furnace structure capable of achieving a higher heating temperature.
【０００８】[0008]
【課題を解決するための手段】本発明は、ボートに保持
されるウェーハを収納する反応管と、該反応管が嵌装さ
れるヒータユニットと、前記ボートが載置されるボート
キャップとを具備する半導体製造装置であって、前記ボ
ートキャップを炭化珪素製の上部キャップと石英製の下
部キャップとから構成し、前記ヒータユニットの下部に
非発熱体の環座を設けたことを特徴とするものである。SUMMARY OF THE INVENTION The present invention retains a boat.
And the reaction tube that accommodates the wafer to be
Heater unit and a boat on which the boat is mounted
A semiconductor manufacturing apparatus comprising a cap,
Bottom cap made of silicon carbide and bottom made of quartz.
Part of the heater unit
It is characterized in that a ring seat of a non-heating element is provided .
【０００９】[0009]
【作用】ヒータユニットから熱を直接受ける部分を少な
くとも炭化硅素材料としたので、炉体構成物の耐熱性が
増大し、加熱温度をより高温とすることができる。Since at least the portion that directly receives heat from the heater unit is made of silicon carbide material, the heat resistance of the furnace body structure is increased and the heating temperature can be increased.
【００１０】[0010]
【実施例】以下、図面を参照しつつ本発明の一実施例を
説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
【００１１】図１中、図２中で示したものと同一の機能
を有するものには同符号を付してある。In FIG. 1, those having the same functions as those shown in FIG. 2 are designated by the same reference numerals.
【００１２】ボートキャップ１１を上部キャップ１３と
下部キャップ１４の上下２段の分割構造とし、前記上部
キャップ１３を炭化硅素（ＳｉＣ）製とし、前記下部キ
ャップ１４を石英製とする。又前記上部キャップ１３と
下部キャップ１４の境界には炭化硅素製の遮熱プレート
１５を載設する。The boat cap 11 has an upper cap 13 and a lower cap 14 divided into upper and lower stages, the upper cap 13 is made of silicon carbide (SiC), and the lower cap 14 is made of quartz. A heat shield plate 15 made of silicon carbide is placed on the boundary between the upper cap 13 and the lower cap 14.
【００１３】反応管１を炭化硅素製の反応管本体１６と
石英製の反応管アダプタ１７とで構成し、前記反応管本
体１６は前記反応管アダプタ１７に載設される。The reaction tube 1 comprises a silicon carbide reaction tube body 16 and a quartz reaction tube adapter 17, and the reaction tube body 16 is mounted on the reaction tube adapter 17.
【００１４】該反応管アダプタ１７は上下にフランジが
形成され、上フランジの所要位置に反応管導入ノズル１
８が設けられている。又、前記反応管本体１６の内部に
は炭化硅素製のガス導入管４が設けられ、該ガス導入管
４は反応管本体１６の上端部に開口し、該ガス導入管４
の下端は反応管本体１６が前記反応管アダプタ１７の上
フランジに乗置した状態で前記反応管導入ノズル１８に
連通する様になっている。The reaction tube adapter 17 has upper and lower flanges, and the reaction tube introducing nozzle 1 is provided at a required position on the upper flange.
8 are provided. A gas introduction pipe 4 made of silicon carbide is provided inside the reaction tube body 16, and the gas introduction pipe 4 is opened at the upper end portion of the reaction tube body 16.
The lower end of the reaction tube main body 16 communicates with the reaction tube introduction nozzle 18 in a state where the reaction tube body 16 is placed on the upper flange of the reaction tube adapter 17.
【００１５】前記反応管アダプタ１７は炉体基板１９に
設けられた反応管支持座２０に乗置しており、前記反応
管アダプタ１７の下フランジが固定リング２１により前
記反応管支持座２０に固定されている。該固定リング２
１には冷却水路２２が形成され、該冷却水路２２に冷却
水を流通することでシールリング１２の冷却を行う。The reaction tube adapter 17 is placed on the reaction tube support seat 20 provided on the furnace body substrate 19, and the lower flange of the reaction tube adapter 17 is fixed to the reaction tube support seat 20 by a fixing ring 21. Has been done. The fixing ring 2
1, a cooling water passage 22 is formed, and cooling water is circulated in the cooling water passage 22 to cool the seal ring 12.
【００１６】前記ボートキャップ１１は炉口フランジ９
に載置され、該ボートキャップ１１の取付け面には前記
シールリング１２が設けられ、該シールリング１２内側
の前記ボートキャップ１１下端に形成されたフランジ上
に石英製の不透明リング２３が設けられる。The boat cap 11 is a furnace port flange 9
The seal ring 12 is provided on the mounting surface of the boat cap 11, and a quartz opaque ring 23 is provided on the flange formed at the lower end of the boat cap 11 inside the seal ring 12.
【００１７】前記ヒータユニット２は環座２４を介して
前記炉体基板１９に立設されており、該環座２４は非発
熱体である。The heater unit 2 is erected on the furnace body substrate 19 via a ring seat 24, and the ring seat 24 is a non-heating element.
【００１８】以上、ヒータユニット２からの熱を直接受
ける部分を耐熱性の高い炭化硅素製とし、直接熱を受け
ない部分を石英製としたので炉の構成物の耐熱性が向上
し、又遮熱プレート１５により炉内部からの熱輻射を遮
断し、又前記シールリング１２の内側に不透明リング２
３を配設することで前記シールリング１２への熱輻射を
遮断する。更に又、前記ヒータユニット２の下端部に環
座２４を設けることで炉口部へのヒータユニット２から
熱遮断効果を増大させている。As described above, the portion directly receiving heat from the heater unit 2 is made of silicon carbide having high heat resistance, and the portion not directly receiving heat is made of quartz. The heat plate 15 blocks heat radiation from the inside of the furnace, and the opaque ring 2 is provided inside the seal ring 12.
By disposing 3, the heat radiation to the seal ring 12 is blocked. Furthermore, by providing the ring seat 24 at the lower end of the heater unit 2, the effect of blocking heat from the heater unit 2 to the furnace opening is increased.
【００１９】而して、炉体自体の耐熱性の向上、炉口部
への熱影響の低減が図られ、半導体製造装置の縦型炉の
加熱温度の高温化が可能となる。Thus, the heat resistance of the furnace body itself is improved, the heat effect on the furnace opening is reduced, and the heating temperature of the vertical furnace of the semiconductor manufacturing apparatus can be increased.
【００２０】[0020]
【発明の効果】以上述べた如く本発明によれば、炉の耐
熱性能が向上するので１１５０℃以上の高温加熱が可能
となる。As described above, according to the present invention, since the heat resistance of the furnace is improved, it is possible to heat at a high temperature of 1150 ° C. or higher.
【図１】本発明の一実施例を示す炉口部の一部断面図で
ある。FIG. 1 is a partial cross-sectional view of a furnace mouth portion showing an embodiment of the present invention.
【図２】従来例の断面図である。FIG. 2 is a sectional view of a conventional example.
１ 反応管 ２ ヒータユニット ４ ガス導入管 １１ ボートキャップ １３ 上部キャップ １４ 下部キャップ １５ 遮熱プレート １６ 反応管本体 １７ 反応管アダプタ １８ 反応管導入ノズル 1 reaction tube 2 heater unit 4 gas introduction pipes 11 boat cap 13 Upper cap 14 Lower cap 15 Heat shield plate 16 Reaction tube body 17 Reaction tube adapter 18 Reaction tube introduction nozzle
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平４−280419（ＪＰ，Ａ) 特開 昭64−12523（ＪＰ，Ａ) 特開 平６−275599（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/22 ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-4-280419 (JP, A) JP-A 64-12523 (JP, A) JP-A-6-275599 (JP, A) (58) Field (Int.Cl. 7 , DB name) H01L 21/22
Claims (2)
反応管と、該反応管が嵌装されるヒータユニットと、前
記ボートが載置されるボートキャップとを具備する半導
体製造装置であって、前記ボートキャップを炭化珪素製
の上部キャップと石英製の下部キャップとから構成し、
前記ヒータユニットの下部に非発熱体の環座を設けたこ
とを特徴とする半導体製造装置。 1. A wafer for holding a wafer held in a boat.
A reaction tube, a heater unit in which the reaction tube is fitted,
A semi-conductor having a boat cap on which the boat is mounted.
A body manufacturing apparatus, wherein the boat cap is made of silicon carbide.
It consists of an upper cap and a quartz lower cap,
A ring seat of a non-heating element is provided below the heater unit.
And a semiconductor manufacturing apparatus.
界に遮熱プレートを設けた請求項１の半導体製造装置。2. The semiconductor manufacturing apparatus according to claim 1, wherein a heat shield plate is provided at a boundary between the upper cap and the lower cap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14865693A JP3388810B2 (en) | 1993-05-27 | 1993-05-27 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14865693A JP3388810B2 (en) | 1993-05-27 | 1993-05-27 | Semiconductor manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06338473A JPH06338473A (en) | 1994-12-06 |
| JP3388810B2 true JP3388810B2 (en) | 2003-03-24 |
Family
ID=15457690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14865693A Expired - Lifetime JP3388810B2 (en) | 1993-05-27 | 1993-05-27 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3388810B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4700300B2 (en) * | 2004-07-12 | 2011-06-15 | 株式会社日立国際電気 | Heat treatment equipment |
| JP2006261317A (en) * | 2005-03-16 | 2006-09-28 | Hitachi Kokusai Electric Inc | Heat treatment apparatus and manufacturing method of substrate |
| JP4167280B2 (en) * | 2006-08-25 | 2008-10-15 | 株式会社日立国際電気 | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
-
1993
- 1993-05-27 JP JP14865693A patent/JP3388810B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06338473A (en) | 1994-12-06 |
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