JPH06302628A - Die bonding method and device thereof - Google Patents
Die bonding method and device thereofInfo
- Publication number
- JPH06302628A JPH06302628A JP10744293A JP10744293A JPH06302628A JP H06302628 A JPH06302628 A JP H06302628A JP 10744293 A JP10744293 A JP 10744293A JP 10744293 A JP10744293 A JP 10744293A JP H06302628 A JPH06302628 A JP H06302628A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- die
- base material
- bonding
- conductive adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83194—Lateral distribution of the layer connectors
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ＬＳＩ等の半導体チッ
プを、銀ペースト等の導電性接着剤を用いて、リードフ
レーム等に接着するダイボンド方法及びその装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a die bonding method and apparatus for bonding a semiconductor chip such as an LSI to a lead frame or the like using a conductive adhesive such as silver paste.
【０００２】[0002]
【従来の技術】従来のダイボンド方法では、導電性接着
剤（ゲル状）を塗布後に半導体チップを水平のまま押さ
え付けるのみであった。一方、大型の半導体チップのダ
イボンドでは導電性接着剤をマトリクス状の複数のドッ
トとして塗布するのが有効かつ一般的（図５（１）：断
面方向のみ図示）であるが、この状態で半導体チップを
水平のまま押し付けると、導電性接着剤のドット間の空
気がその周囲の導電性接着剤によって閉じ込められ（図
５（２））、ダイボンド終了後も半導体チップ下部の導
電性接着剤内に気泡が存在することがあった（図５
（３））。2. Description of the Related Art In a conventional die-bonding method, a semiconductor chip is only pressed horizontally while applying a conductive adhesive (gel). On the other hand, in die bonding of a large semiconductor chip, it is effective and common to apply a conductive adhesive as a plurality of dots in a matrix (FIG. 5 (1): only the cross-sectional direction is shown). If is pressed horizontally, the air between the dots of the conductive adhesive will be trapped by the conductive adhesive around it (Fig. 5 (2)), and air bubbles will form in the conductive adhesive under the semiconductor chip even after die bonding. Was sometimes present (Fig. 5
(3)).
【０００３】[0003]
【発明が解決しようとする課題】従来のダイボンド方法
では、半導体チップ下部に存在する気泡が原因となっ
て、温度サイクル試験等の信頼性の低下を来すという問
題があった。The conventional die-bonding method has a problem that air bubbles existing under the semiconductor chip cause a decrease in reliability such as a temperature cycle test.
【０００４】本発明は上記事情に基づいてなされたもの
であり、半導体チップ下部の導電性接着剤内に気泡を発
生することなくダイボンドを行うことのできるダイボン
ド方法およびその装置を提供することを目的とする。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a die bonding method and apparatus capable of performing die bonding without generating bubbles in the conductive adhesive under the semiconductor chip. And
【０００５】[0005]
【課題を解決するための手段】本発明は上記課題を解決
するために、半導体チップを基材上に導電性接着剤を用
いて固定するダイボンド方法において、前記半導体チッ
プを導電性接着剤が塗布された前記基材に対して傾斜さ
せて接触させた後、前記半導体チップを前記基材に押し
つけたまま前記半導体チップを前記基材に対して平行に
し、所定のボンディング荷重を加える事を特徴とするも
のである。In order to solve the above problems, the present invention provides a die bonding method for fixing a semiconductor chip on a substrate using a conductive adhesive, wherein the semiconductor chip is coated with a conductive adhesive. After inclining and contacting the formed base material, the semiconductor chip is parallel to the base material while the semiconductor chip is pressed against the base material, and a predetermined bonding load is applied. To do.
【０００６】また本発明は、半導体チップを基材上に導
電性接着剤を用いて固定するダイボンド装置において、
前記半導体チップを導電性接着剤が塗布された前記基材
に対して傾斜させて接触させた後、前記半導体チップを
前記基材に押しつけたまま前記半導体チップを前記基材
に対して平行にし、所定のボンディング荷重を加える事
を特徴とするものである。The present invention also provides a die bonding apparatus for fixing a semiconductor chip on a base material using a conductive adhesive,
After inclining and contacting the semiconductor chip with respect to the base material coated with a conductive adhesive, the semiconductor chip is parallel to the base material while pressing the semiconductor chip against the base material, It is characterized by applying a predetermined bonding load.
【０００７】[0007]
【作用】これにより、導電性接着剤はある一方から順次
押しつぶされて行く為、導電性接着剤の塗布形状とは関
わりなくダイボンド終了時に、半導体チップ下部の導電
性接着剤内に気泡（空気の取り残し）を発生することを
未然に防ぐことが可能となる。As a result, the conductive adhesive is squeezed from one side one after another, so that air bubbles (air bubbles) are formed in the conductive adhesive under the semiconductor chip at the end of die bonding regardless of the shape of the conductive adhesive applied. It is possible to prevent the occurrence of (leftover).
【０００８】[0008]
【実施例】図１は本発明の一実施例であり、ダイボンド
方法の原理を説明するものである。半導体チップ１はあ
る一辺を最下点として降下し、まず一辺をリードフレー
ムのダイアイランド２に接地する（図１（１））、次い
で接地点を旋回中心として半導体チップ１の傾斜を水平
に戻しつつ更に降下を進め（図１（２））、半導体チッ
プ１が水平に戻った後に所定のボンディング荷重を加え
てダイボンドを終了する（図１（３））。ここで、導電
性接着剤３は図１において右端から左へ向い順次押し潰
される為、導電性接着剤３のドット間に存在する空気も
順次消滅して行きダイボンド終了時に半導体チップ１の
下部に存在することはなくなる。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is an embodiment of the present invention and illustrates the principle of the die bonding method. The semiconductor chip 1 descends with one side as the lowest point, and first grounds one side to the die island 2 of the lead frame (FIG. 1 (1)), and then returns the inclination of the semiconductor chip 1 to the horizontal with the grounding point as the turning center. While further descending (FIG. 1 (2)), a predetermined bonding load is applied after the semiconductor chip 1 returns to the horizontal position to complete the die bonding (FIG. 1 (3)). Here, since the conductive adhesive 3 is squeezed sequentially from the right end to the left in FIG. 1, the air existing between the dots of the conductive adhesive 3 also disappears sequentially, and when the die bonding is completed, the conductive adhesive 3 is squeezed to the bottom of the semiconductor chip 1. It will never exist.
【０００９】図２は本発明のダイボンド装置の一実施例
を示す図であり、４ａ及び４ｂはバキューム用の穴を有
する剛体（例えばステンレス鋼）であり、４ｃは４ａ・
４ｂの端面にそれぞれ焼結され、４ａ・４ｂのバキュー
ム穴を連結する穴を有するゴムである。半導体チップ１
は下部剛体４ｂの下部にバキュームによって吸着され、
上部剛体４ａ、下部剛体４ｂよりなるダイボンド腕部
（４ａ−ｃ）の上部剛体４ａはダイボンダー（図示せ
ず）に傾斜をもって取り付けられており（図２
（１））、これをこのまま降下させると下部剛体４ｂに
取り付けられた半導体チップ１の右辺がダイアイランド
２に先ず着地し、更に降下させるとゴム４ｃの右端が半
導体チップ１が水平になるまで縮み、所定のボンディン
グ荷重をチップとダイアイランドに加えダイボンドを終
了する（図２（２））。FIG. 2 is a view showing an embodiment of the die bonding apparatus of the present invention. 4a and 4b are rigid bodies (for example, stainless steel) having holes for vacuum, and 4c is 4a.
It is a rubber having a hole which is respectively sintered on the end face of 4b and connects the vacuum holes of 4a and 4b. Semiconductor chip 1
Is adsorbed to the lower part of the lower rigid body 4b by vacuum,
The upper rigid body 4a of the die bond arm (4a-c) including the upper rigid body 4a and the lower rigid body 4b is attached to the die bonder (not shown) with an inclination (see FIG. 2).
(1)) When this is lowered as it is, the right side of the semiconductor chip 1 attached to the lower rigid body 4b first lands on the die island 2, and when it is further lowered, the right end of the rubber 4c contracts until the semiconductor chip 1 becomes horizontal. Then, a predetermined bonding load is applied to the chip and the die island to complete the die bonding (FIG. 2 (2)).
【００１０】図３は図２のダイボンド装置の変形実施例
である。図２のダイボンド装置のゴム４ｃの替わりに上
下剛体５ａ，５ｂをコイルバネ５ｃで連結し、更にこれ
らの内部に柔軟性のあるチューブでバキューム通路を設
けたものである。図２と同様の効果を有する。FIG. 3 shows a modified embodiment of the die bonding apparatus shown in FIG. The upper and lower rigid bodies 5a and 5b are connected by a coil spring 5c instead of the rubber 4c of the die-bonding device shown in FIG. 2, and a vacuum passage is provided inside these by a flexible tube. It has the same effect as in FIG.
【００１１】図４は本発明の特許請求範囲第３項の一実
施例である。ダイボンド腕部６はダイボンド腕部支持体
７を介して移動体１０に設けられた溝８に溝８の面に沿
って図の平面方向に移動可能に保持されている。ダイボ
ンド腕部６の先端部に半導体チップ１がバキューム通路
６ａによる吸引によって装着されている。移動体１０を
引き上げた状態ではダイボンド腕部６は溝内に傾いてい
る。移動体１０を垂直方向Ａに下降されるとダイボンド
腕部６の先端の半導体チップ１がダイアイランド２に対
して傾いた状態で接触する。さらに下降を続けると、旋
回路８内をローラ９が移動し半導体チップ１はダイアイ
ランド２に対して水平になる。この状態でさらに所定の
ダイボンド圧に応じた下降量だけ移動体を下降させダイ
ボンドを終了する。FIG. 4 shows an embodiment of claim 3 of the present invention. The die bond arm portion 6 is held via a die bond arm portion support member 7 in a groove 8 provided in the moving body 10 so as to be movable in the plane direction of the drawing along the surface of the groove 8. The semiconductor chip 1 is mounted on the tip of the die bond arm 6 by suction through the vacuum passage 6a. When the moving body 10 is pulled up, the die bond arm 6 is tilted into the groove. When the moving body 10 is lowered in the vertical direction A, the semiconductor chip 1 at the tip of the die bond arm portion 6 contacts the die island 2 in an inclined state. When the descent is further continued, the roller 9 moves in the turning circuit 8 and the semiconductor chip 1 becomes horizontal with respect to the die island 2. In this state, the moving body is further lowered by the descending amount corresponding to the predetermined die bond pressure, and the die bonding is completed.
【００１２】上記の実施例によれば、半導体チップとリ
ードフレームとの間には気泡が存在しなくなるので、半
田耐熱及び温度サイクル試験での突発不良の原因の一つ
を取り除くことができる。According to the above-mentioned embodiment, since air bubbles do not exist between the semiconductor chip and the lead frame, one of the causes of the solder heat resistance and the sudden failure in the temperature cycle test can be eliminated.
【００１３】[0013]
【発明の効果】以上説明したように本発明によれば、半
導体チップ下部の導電性接着剤内に気泡を発生すること
なくダイボンドをすることができ、結果として信頼性の
高い半導体製品の供給が可能となる。As described above, according to the present invention, die bonding can be performed without generating bubbles in the conductive adhesive under the semiconductor chip, and as a result, highly reliable semiconductor products can be supplied. It will be possible.
【図１】請求項１記載の発明の一実施例を示す図であ
る。FIG. 1 is a diagram showing an embodiment of the invention described in claim 1.
【図２】請求項２記載の発明の一実施例を示す図であ
る。FIG. 2 is a diagram showing an embodiment of the invention described in claim 2;
【図３】請求項２記載の発明の一実施例を示す図であ
る。FIG. 3 is a diagram showing an embodiment of the invention according to claim 2;
【図４】請求項３記載の発明の一実施例を示す図であ
る。FIG. 4 is a diagram showing an embodiment of the invention according to claim 3;
【図５】従来技術の説明図である。FIG. 5 is an explanatory diagram of a conventional technique.
１ 半導体チップ ２ ダイアイランド ３ 導電性ペースト ４ ダイボンド腕部 ５ ダイボンド腕部 ６ ダイボンド腕部 ７ ダイボンド腕部支持体 1 Semiconductor Chip 2 Die Island 3 Conductive Paste 4 Die Bond Arm 5 Die Bond Arm 6 Die Bond Arm 7 Die Bond Arm Support
Claims (4)
用いて固定するダイボンド方法において、 前記半導体チップを導電性接着剤が塗布された前記基材
に対して傾斜させて接触させた後、前記半導体チップを
前記基材に押しつけたまま前記半導体チップを前記基材
に対して平行にし、所定のボンディング荷重を加える事
を特徴とするダイボンド方法。1. A die-bonding method for fixing a semiconductor chip on a base material by using a conductive adhesive, wherein the semiconductor chip is tilted and brought into contact with the base material coated with the conductive adhesive. A die-bonding method, wherein the semiconductor chip is parallel to the base material while the semiconductor chip is pressed against the base material, and a predetermined bonding load is applied.
用いて固定するダイボンド装置において、 前記半導体チップを導電性接着剤が塗布された前記基材
に対して傾斜させて接触させた後、前記半導体チップを
前記基材に押しつけたまま前記半導体チップを前記基材
に対して平行にし、所定のボンディング荷重を加える事
を特徴とするダイボンド装置。2. A die bonding apparatus for fixing a semiconductor chip on a base material using a conductive adhesive, after the semiconductor chip is tilted and brought into contact with the base material coated with the conductive adhesive. A die-bonding device, wherein the semiconductor chip is parallel to the base material while the semiconductor chip is pressed against the base material, and a predetermined bonding load is applied.
ップ装着部を備えた第１の腕部と、前記第１の腕部に弾
性部材を介して接続され前記基材に対して所定角度傾い
た方向に習動可能に保持された第２の腕部とを備えた事
を特徴とする請求項２に記載のダイボンド装置。3. A first arm portion having a tip mounting portion for mounting the semiconductor chip at a front end portion, and a first arm portion connected to the first arm portion through an elastic member and tilted at a predetermined angle with respect to the base material. The die-bonding apparatus according to claim 2, further comprising a second arm portion movably held in a different direction.
ップ装着部を備えたダイボンド腕部と、前記ダイボンド
腕部を前記半導体チップと前記基材との接点を中心に旋
回させる旋回手段と、を備え、前記半導体チップを前記
基材に対して傾斜させて接触させた後、前記半導体チッ
プを前記基材に押しつけたまま前記旋回手段により前記
ダイボンド腕部を旋回させ、前記半導体チップを前記基
材に対して平行にし、所定のボンディング荷重を加える
事を特徴とする請求項２に記載のダイボンド装置。4. A die bond arm portion having a chip mounting portion for mounting the semiconductor chip at a tip end thereof, and a pivoting means for pivoting the die bond arm portion around a contact point between the semiconductor chip and the base material. After the semiconductor chip is tilted and brought into contact with the base material, the die bonding arm portion is swung by the swiveling means while the semiconductor chip is pressed against the base material, and the semiconductor chip is made into the base material. The die-bonding apparatus according to claim 2, wherein the die-bonding apparatus is parallel to the above and a predetermined bonding load is applied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10744293A JPH06302628A (en) | 1993-04-09 | 1993-04-09 | Die bonding method and device thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10744293A JPH06302628A (en) | 1993-04-09 | 1993-04-09 | Die bonding method and device thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06302628A true JPH06302628A (en) | 1994-10-28 |
Family
ID=14459259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10744293A Withdrawn JPH06302628A (en) | 1993-04-09 | 1993-04-09 | Die bonding method and device thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06302628A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009130123A (en) * | 2007-11-22 | 2009-06-11 | Toyota Motor Corp | Bonding method of electronic component and circuit board, bonding device for the same, and semiconductor device |
| JP2014517546A (en) * | 2011-07-04 | 2014-07-17 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Method for manufacturing structured sintered bonding layer and semiconductor device comprising structured sintered bonding layer |
-
1993
- 1993-04-09 JP JP10744293A patent/JPH06302628A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009130123A (en) * | 2007-11-22 | 2009-06-11 | Toyota Motor Corp | Bonding method of electronic component and circuit board, bonding device for the same, and semiconductor device |
| JP2014517546A (en) * | 2011-07-04 | 2014-07-17 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Method for manufacturing structured sintered bonding layer and semiconductor device comprising structured sintered bonding layer |
| US9887173B2 (en) | 2011-07-04 | 2018-02-06 | Robert Bosch Gmbh | Method for producing structured sintered connection layers, and semiconductor element having a structured sintered connection layer |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20000704 |