JPH06297207A - Vapor phase synthetic diamond cutting tool with high toughness - Google Patents
Vapor phase synthetic diamond cutting tool with high toughnessInfo
- Publication number
- JPH06297207A JPH06297207A JP8652893A JP8652893A JPH06297207A JP H06297207 A JPH06297207 A JP H06297207A JP 8652893 A JP8652893 A JP 8652893A JP 8652893 A JP8652893 A JP 8652893A JP H06297207 A JPH06297207 A JP H06297207A
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- JP
- Japan
- Prior art keywords
- diamond
- layer
- film
- diamond film
- cutting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、気相合成法によって合
成した多結晶ダイヤモンドを切削工具母材にろう付けし
た気相合成ダイヤモンド切削工具に関し、殊に高靭性で
耐欠損性や耐摩耗性に優れ、非鉄金属やセラミックス材
料の切削に適した気相合成ダイヤモンド切削工具に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor phase synthetic diamond cutting tool in which polycrystalline diamond synthesized by a vapor phase synthesis method is brazed to a cutting tool base material, and particularly toughness, fracture resistance and wear resistance. The present invention relates to a vapor-phase synthetic diamond cutting tool suitable for cutting non-ferrous metals and ceramic materials.
【０００２】[0002]
【従来の技術】ダイヤモンドは、硬質材料として従来か
ら用いられてきたアルミナ，窒化珪素，タングステンカ
ーバイド等と比べても極めて高い硬度を有し、また熱伝
導率も高いことから、切削工具や耐摩耗性工具等への応
用開発が盛んに行なわれている。2. Description of the Related Art Diamond has extremely high hardness as compared with alumina, silicon nitride, tungsten carbide, etc., which have been conventionally used as hard materials, and also has high thermal conductivity, so that diamond has a high wear resistance. Application development for flexible tools, etc. is being actively conducted.
【０００３】ダイヤモンドを応用した工具として、ダイ
ヤモンド微粉末を高温・高圧下で焼結したダイヤモンド
焼結体を用いた工具も開発され、非鉄金属やセラミック
ス等の切削加工用工具や研削加工用工具として広く使用
されている。しかしながらダイヤモンド焼結体は、焼結
助剤として５〜１０％程度のＣｏを含有しており、この
Ｃｏはダイヤモンドの粒界に存在して粒界強度を低下さ
せるので、この様なダイヤモンド焼結体を切削工具とし
て応用しても切削時に刃先のチッピングやカケを生じ易
いという問題がある。As a tool to which diamond is applied, a tool using a diamond sintered body obtained by sintering fine diamond powder at high temperature and high pressure has been developed, and is used as a cutting tool or a grinding tool for nonferrous metal or ceramics. Widely used. However, the diamond sintered body contains about 5 to 10% of Co as a sintering aid, and this Co exists in the grain boundary of diamond and lowers the grain boundary strength. Even if the body is applied as a cutting tool, there is a problem that chipping or chipping of the cutting edge is likely to occur during cutting.
【０００４】一方、ダイヤモンドの気相合成法が確立さ
れて以来、複雑な形状の工具にも容易に且つ安価に応用
できる可能性があることから、気相合成法によってダイ
ヤモンドを主体とする多結晶膜（以下、多結晶ダイヤモ
ンド膜と呼ぶことがある）を工具母材表面に被覆した工
具の開発も活発化している。しかしながら、気相合成し
た多結晶ダイヤモンド膜は、高強度，高熱伝導性という
工具部材として優れた特性を持っている反面、膜の内部
応力が大きく工具母材との密着性が低いので、例えば切
削工具にコーティングしても切削中に容易に剥離すると
いう欠点を有し、必ずしも十分な性能が得られていると
は言えない。On the other hand, since the vapor phase synthesis method of diamond was established, it may be easily and inexpensively applied to tools having complicated shapes. The development of tools in which a film (hereinafter sometimes referred to as a polycrystalline diamond film) is coated on the surface of the tool base material has been activated. However, while the vapor-phase synthesized polycrystalline diamond film has excellent properties as a tool member such as high strength and high thermal conductivity, it has a large internal stress of the film and low adhesion to the tool base material. Even if it is coated on a tool, it has a drawback that it is easily peeled off during cutting, and it cannot be said that sufficient performance is necessarily obtained.
【０００５】そこで多結晶ダイヤモンド膜の内部応力を
緩和させるという観点から、例えば特開平１−２１２７
６６号公報や同１−２１２７６７号公報等の技術が提案
されている。これらの技術は、気相合成法によって適当
な基板上に厚さ１００μｍ以上の多結晶ダイヤモンド膜
を析出させ、生成した膜を一旦基板から取り外して刃先
形状に切断して工具母材の刃先部にろう付けによって取
り付け、刃立て加工したものである。この様な工具（以
下、ろう付け工具と呼ぶことがある）では、多結晶ダイ
ヤモンド膜を工具母材にろう付けによって取り付けたも
のであるので、工具母材とダイヤモンド膜の密着強度が
高く、また多結晶ダイヤモンド膜中にはＣｏ等の結合助
剤を含まないので耐摩耗性にも優れているという利点を
有している。Therefore, from the viewpoint of relaxing the internal stress of the polycrystalline diamond film, for example, Japanese Patent Laid-Open No. 1-2127.
Techniques such as Japanese Patent No. 66 and Japanese Patent No. 1-212767 have been proposed. These techniques deposit a polycrystalline diamond film with a thickness of 100 μm or more on a suitable substrate by a vapor phase synthesis method, remove the formed film from the substrate once, and cut it into a blade edge shape to form a blade edge portion of a tool base material. It is attached by brazing and is edged. In such a tool (hereinafter sometimes referred to as a brazing tool), since the polycrystalline diamond film is attached to the tool base material by brazing, the adhesion strength between the tool base material and the diamond film is high, and Since the polycrystalline diamond film does not contain a binding aid such as Co, it has an advantage of being excellent in wear resistance.
【０００６】[0006]
【発明が解決しようとする課題】ろう付け工具はこれま
での工具では得られない優れた利点を有するものである
が、それでも切削時に刃先に高い荷重や衝撃が加わると
刃先が欠損してしまうという問題があり、靭性を更に向
上させることが望まれている。Although the brazing tool has excellent advantages that cannot be obtained by conventional tools, even if a high load or impact is applied to the cutting edge during cutting, the cutting edge will be damaged. There are problems, and it is desired to further improve the toughness.
【０００７】本発明は上記の様な事情に着目してなされ
たものであって、その目的は、多結晶ダイヤモンド膜の
靭性を更に向上させ、刃先部の耐欠損が生じない様なろ
う付け気相合成ダイヤモンド切削工具を提供することに
ある。The present invention has been made by paying attention to the above circumstances, and its purpose is to further improve the toughness of a polycrystalline diamond film and to prevent the chipping of the cutting edge portion from brazing. It is to provide a phase synthetic diamond cutting tool.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成し得た本
発明とは、気相合成法によって合成された多結晶ダイヤ
モンド膜が、工具母材のすくい面側の切削作用部分にろ
う付けによって取付けられた気相合成ダイヤモンド切削
工具において、前記多結晶ダイヤモンド膜は、ラマン分
光分析によるダイヤモンドのピーク強度Ｉ1 に対する非
ダイヤモンド炭素のピーク強度Ｉ2 の強度比（Ｉ2 ／Ｉ
1 ）が０．７以下の層と、当該強度比（Ｉ2 ／Ｉ1 ）が
０．９以上の層が交互に積層された多層型多結晶ダイヤ
モンド膜である点に要旨を有する気相合成ダイヤモンド
切削工具である。According to the present invention, which has achieved the above object, a polycrystalline diamond film synthesized by a vapor phase synthesis method is brazed to a cutting action portion on the rake face side of a tool base material. In the attached vapor phase synthetic diamond cutting tool, the polycrystalline diamond film has an intensity ratio (I 2 / I) of a peak intensity I 2 of non-diamond carbon to a peak intensity I 1 of diamond by Raman spectroscopy.
1 ) A layer having a 0.7 or less and a layer having a strength ratio (I 2 / I 1 ) of 0.9 or more are alternately laminated to form a multi-layer polycrystalline diamond film. It is a diamond cutting tool.
【０００９】[0009]
【作用】気相合成多結晶ダイヤモンド膜が欠損し易い原
因の一つは、膜を構成する各ダイヤモンドが柱状組織で
あることによると考えられる。これを図面を用いて説明
する。これまで気相合成によって多結晶ダイヤモンド膜
を形成する過程は図２に示す様に行なわれている。まず
合成初期に基板１上にダイヤモンドの核２が形成され
［図２（ａ）］、次いでこれらの核が粒成長してダイヤ
モンド粒３となって基板１全面を覆う［図２（ｂ）］。
ダイヤモンド粒３は各々成長速度が異なり、成長の速い
粒が優勢となって成長し、粗大化した柱状の粒からなる
組織４となる［図２（ｃ）］。粗大化した柱状組織にな
ると、それに伴い粒界が大きくなり粒界欠陥も大きくな
る。この結果、多結晶ダイヤモンド膜の靭性が低下し欠
損を生じ易くなると考えられる。It is considered that one of the reasons why the vapor phase synthesized polycrystalline diamond film is likely to be damaged is that each diamond forming the film has a columnar structure. This will be described with reference to the drawings. Up to now, the process of forming a polycrystalline diamond film by vapor phase synthesis has been performed as shown in FIG. First, diamond nuclei 2 are formed on the substrate 1 at the initial stage of synthesis [FIG. 2 (a)], and then these nuclei grow into diamond grains 3 to cover the entire surface of the substrate 1 [FIG. 2 (b)]. .
The diamond grains 3 have different growth rates, and fast-growing grains predominate and grow to form a structure 4 composed of coarse columnar grains [FIG. 2 (c)]. When the columnar structure becomes coarse, the grain boundary becomes larger and the grain boundary defect becomes larger accordingly. As a result, it is considered that the toughness of the polycrystalline diamond film is lowered and defects are likely to occur.
【００１０】一般にセラミックス材料でいわれている様
に、靭性向上には微細な粒状組織にすることが耐欠損性
向上の一つの方法となるが、ダイヤモンドの成長は、各
粒に関してはエピタキシャル成長であり、粒の表面に２
次核が発生するまで粒成長する。この２次核は、ある程
度粒が成長しないと発生せず、発生頻度も少ないために
ダイヤモンドの粒状組織化は非常に困難である。そこで
本発明者らは、粒成長を抑制して耐欠損性を改善できる
多結晶ダイヤモンド膜の構造について様々な角度から検
討した。その結果、多結晶ダイヤモンド膜を上述した様
な多層型構造とすれば、各ダイヤモンド粒の粒成長が抑
制されて耐欠損性が改善され、靭性が極めて優れた気相
合成ダイヤモンド切削工具が実現できることを見出し、
本発明を完成した。As is generally said for ceramic materials, a fine grain structure is one of the methods for improving fracture resistance in order to improve toughness, but diamond growth is epitaxial growth for each grain. 2 on the surface of the grain
Grains grow until the generation of secondary nuclei. The secondary nuclei do not occur unless the grains grow to some extent, and the occurrence frequency is low, so that it is very difficult to form a diamond grain structure. Therefore, the present inventors examined from various angles the structure of a polycrystalline diamond film capable of suppressing grain growth and improving fracture resistance. As a result, if the polycrystalline diamond film has a multilayer structure as described above, grain growth of each diamond grain is suppressed, the fracture resistance is improved, and a vapor phase synthetic diamond cutting tool with extremely excellent toughness can be realized. Heading
The present invention has been completed.
【００１１】本発明に係る多層型多結晶ダイヤモンド膜
は、例えば下記の手順［図１（ａ）〜（ｅ）］で形成さ
れる。まず合成初期は通常のダイヤモンドの成長と同様
で、基板１上にダイヤモンドの核２が形成される［図１
（ａ）］。次いで、これらの核２を粒成長させて、ラマ
ン分光分析によるピーク強度比（Ｉ2 ／Ｉ1 ）が０．７
以下のダイヤモンド層５を形成する［図１（ｂ）］。引
き続き、ダイヤモンド層５の表面に、ピーク強度比（Ｉ
2 ／Ｉ1 ）が０．９以上となる、ダイヤモンドと非ダイ
ヤモンド炭素の混合層６または非ダイヤモンド炭素のみ
の層６を析出させる［図１（ｃ）］。The multilayer polycrystalline diamond film according to the present invention is formed, for example, by the following procedure [FIGS. 1 (a) to 1 (e)]. First, in the initial stage of synthesis, diamond nuclei 2 are formed on the substrate 1 in the same manner as normal diamond growth [Fig. 1
(A)]. Then, these nuclei 2 are grown to have a peak intensity ratio (I 2 / I 1 ) of 0.7 by Raman spectroscopy.
The following diamond layer 5 is formed [FIG. 1 (b)]. Then, on the surface of the diamond layer 5, the peak intensity ratio (I
A mixed layer 6 of diamond and non-diamond carbon or a layer 6 of only non-diamond carbon having a 2 / I 1 ) ratio of 0.9 or more is deposited [FIG. 1 (c)].
【００１２】ところでピーク強度比（Ｉ2 ／Ｉ1 ）が
０．７以下の層にも非ダイヤモンド炭素が含まれること
があるが、ピーク強度比（Ｉ2 ／Ｉ1 ）が０．９以上の
層に比べて非ダイヤモンド炭素の含有量は少ないので、
以後ピーク強度比（Ｉ2 ／Ｉ1）が０．７以下の層をダ
イヤモンド層５、ラマンピーク比（Ｉ2 ／Ｉ1 ）が０．
９以上の層を混合層６と呼ぶことにする。尚非ダイヤモ
ンド炭素は、非晶質炭素やグラファイト等のダイヤモン
ド構造を持たない炭素のことを指すが、ダイヤモンド構
造を持たないダイヤモンドと異質の非ダイヤモンド炭素
がダイヤモンドの表面に析出することにより、下層のダ
イヤモンドのエピタキシャル成長を抑制するのである。Incidentally, non-diamond carbon may be contained in a layer having a peak intensity ratio (I 2 / I 1 ) of 0.7 or less, but the peak intensity ratio (I 2 / I 1 ) of 0.9 or more. Since the content of non-diamond carbon is lower than that of the layer,
Thereafter, the layer having a peak intensity ratio (I 2 / I 1 ) of 0.7 or less was a diamond layer 5, and the Raman peak ratio (I 2 / I 1 ) was 0.
The layers of 9 or more are called the mixed layer 6. Non-diamond carbon refers to carbon that does not have a diamond structure, such as amorphous carbon or graphite, but non-diamond carbon that is different from diamond that does not have a diamond structure is deposited on the surface of the diamond, and It suppresses the epitaxial growth of diamond.
【００１３】その後、再びダイヤモンドが析出する条件
にすると、混合層６中のダイヤモンドまたは非ダイヤモ
ンド炭素がダイヤモンドの核発生点となって混合層６上
にダイヤモンドの粒が成長しダイヤモンド層５となって
混合層６上を覆う［図１（ｄ）］。以後混合層６とダイ
ヤモンド層５を交互に積層することにより、粒状組織に
近い靭性の高い多層型多結晶ダイヤモンド膜１０が得ら
れるのである。また本発明の多層型多結晶ダイヤモンド
膜１０では、ダイヤモンドよりも柔らかい非ダイヤモン
ド炭素を含む混合層６が介在することも靭性の向上に寄
与していると考えられる。但し、非ダイヤモンド炭素は
耐摩耗性においてはダイヤモンドに劣るため、混合層６
の割合が高くなると耐摩耗性が劣化する。従って、後述
する様に各層には最適な厚みや厚み比率がある。After that, under the condition that the diamond is deposited again, the diamond or the non-diamond carbon in the mixed layer 6 becomes the nucleation point of the diamond and the diamond grains grow on the mixed layer 6 to form the diamond layer 5. The mixed layer 6 is covered [Fig. 1 (d)]. After that, by alternately laminating the mixed layers 6 and the diamond layers 5, the multi-layer type polycrystalline diamond film 10 having a high toughness close to a granular structure can be obtained. Further, in the multilayer polycrystalline diamond film 10 of the present invention, the inclusion of the mixed layer 6 containing non-diamond carbon, which is softer than diamond, is also considered to contribute to the improvement of toughness. However, since non-diamond carbon is inferior in wear resistance to diamond, the mixed layer 6
The wear resistance deteriorates as the ratio of the above increases. Therefore, as described later, each layer has an optimum thickness and thickness ratio.
【００１４】尚上記膜形成手順においては、初めにダイ
ヤモンド層５を基板１上に形成しているが、初めに混合
層６を基板１上形成してから多層型多結晶ダイヤモンド
膜を形成しても工具性能に何等問題はない。またこの多
層型多結晶ダイヤモンド膜は基板を除去された後、工具
表面にろう付けされるが、すくい面には膜の成長面側で
も元の基板面側でもどちらをとっても良い。更に、すく
い面はダイヤモンド層５でも混合層６でもどちらでも構
わない。In the film forming procedure, the diamond layer 5 is first formed on the substrate 1. However, the mixed layer 6 is first formed on the substrate 1 and then the multilayer polycrystalline diamond film is formed. However, there is no problem in tool performance. The multilayer polycrystalline diamond film is brazed to the tool surface after the substrate is removed. The rake face may be either the growth face side of the film or the original substrate face side. Further, the rake face may be either the diamond layer 5 or the mixed layer 6.
【００１５】本発明に係る多層型多結晶ダイヤモンド膜
１０において、ダイヤモンド層５のピーク強度比（Ｉ2
／Ｉ1 ）は０．７以下とする必要がある。これは、ピー
ク強度比（Ｉ2 ／Ｉ1 ）がそれより高くなると非ダイヤ
モンド炭素の含有率が高くなり、耐摩耗性が劣化するか
らである。また、混合層６のピーク強度比（Ｉ2 ／Ｉ
1 ）を０．９以上とする必要があるのは、それより低い
と非ダイヤモンド炭素の含有率が少なくなり、ダイヤモ
ンドのエピタキシャル成長を抑制することができず、粒
が粗大化し柱状組織となるからである。Multilayer type polycrystalline diamond film according to the present invention
10, the diamond layer 5 peak intensity ratio (I2
/ I1 ) Must be 0.7 or less. This is pee
Intensity ratio (I2 / I1 ) Is higher than that, non-diamond
Does the content of mond carbon increase and wear resistance deteriorates?
It is. In addition, the peak intensity ratio (I2 / I
1 ) Must be 0.9 or higher
And the content of non-diamond carbon decreases,
It is not possible to suppress the epitaxial growth of the
Is coarsened to form a columnar structure.
【００１６】次に、ダイヤモンド層５の平均厚さは０．
２〜５μｍとするのが好ましい。即ち、ダイヤモンド層
５の平均厚さが０．２μｍ未満になると、ダイヤモンド
の粒径が小さくなり耐摩耗性が劣化する。一方、５μｍ
より厚くなると、耐欠損性が劣化するからである。また
混合層６の平均厚さは、０．０２〜５μｍとなるのが好
ましい。即ち、混合層６の厚さが０．０２μｍ未満にな
ると、完全にダイヤモンドの表面を被覆できず、ダイヤ
モンドの粒成長を抑制できない。一方、５μｍより厚く
なると耐摩耗性が劣化する。更に、ダイヤモンド層５の
厚み（δ1 ）と混合層６の厚み（δ2 ）の比（δ1 ／δ
2 ）は０．５以上であることが好ましい。この比率が
０．５より小さくなると、混合層６の割合が高くなり、
耐摩耗性が劣化する。Next, the average thickness of the diamond layer 5 is 0.
The thickness is preferably 2 to 5 μm. That is, when the average thickness of the diamond layer 5 is less than 0.2 μm, the diamond grain size becomes small and the wear resistance deteriorates. On the other hand, 5 μm
This is because the fracture resistance deteriorates as the thickness increases. The average thickness of the mixed layer 6 is preferably 0.02 to 5 μm. That is, when the thickness of the mixed layer 6 is less than 0.02 μm, the surface of diamond cannot be completely covered and the grain growth of diamond cannot be suppressed. On the other hand, if it is thicker than 5 μm, the wear resistance deteriorates. Furthermore, the ratio of the thickness of the diamond layer 5 (δ 1 ) to the thickness of the mixed layer 6 (δ 2 ) (δ 1 / δ
2 ) is preferably 0.5 or more. When this ratio is smaller than 0.5, the ratio of the mixed layer 6 increases,
Abrasion resistance deteriorates.
【００１７】尚、ダイヤモンド層５における各ダイヤモ
ンド粒の粒径については、０．２〜０．５μｍとするの
が好ましい。即ち、０．２μｍ未満であるとダイヤモン
ドの粒が小さすぎて耐摩耗性が劣化し、５μｍより大き
くなると粒の粗大化により耐欠損性が劣化するからであ
る。The particle size of each diamond grain in the diamond layer 5 is preferably 0.2 to 0.5 μm. That is, if it is less than 0.2 μm, the diamond grains are too small and wear resistance deteriorates, and if it is more than 5 μm, the fracture resistance deteriorates due to the coarsening of the grains.
【００１８】本発明の気相合成ダイヤモンド切削工具
は、上記の様な多層型多結晶ダイヤモンド膜１０を、工
具母材のすくい面側の切削作用部分にろう付けによって
取り付けることによって構成されるが、このときの多層
型多結晶ダイヤモンド膜１０の全体厚さは５０μｍ以上
とするのが好ましい。即ち、多層型多結晶ダイヤモンド
膜の厚さが５０μｍ未満では、膜全体の強度が低くなっ
て、膜が破損し易くなるからである。一方多層型多結晶
ダイヤモンド膜の厚さが、あまり大きくなっても、性能
上あまり変わりがないばかりでなく、成膜に長時間を要
することから厚みの上限は１０００μｍ程度が適当であ
る。The vapor-phase synthetic diamond cutting tool of the present invention is constructed by attaching the above-mentioned multilayer polycrystalline diamond film 10 to the cutting action portion on the rake face side of the tool base material by brazing. At this time, the total thickness of the multilayer polycrystalline diamond film 10 is preferably 50 μm or more. That is, if the thickness of the multi-layer polycrystalline diamond film is less than 50 μm, the strength of the entire film becomes low and the film is easily damaged. On the other hand, even if the thickness of the multi-layered polycrystalline diamond film is too large, not only the performance does not change so much, but also since the film formation requires a long time, the upper limit of the thickness is preferably about 1000 μm.
【００１９】また本発明の気相合成ダイヤモンド切削工
具において、多層型多結晶ダイヤモンド膜１０のすくい
面に相当する部分は、その表面粗さがＲmax で０．３μ
ｍ以下の鏡面状態とするのが良い。即ち、すくい面に相
当する部分を鏡面状態とすることによって、工具使用時
に被削材の切り屑の排出が円滑になり、該切り屑がすく
い面に溶着して構成刃先を形成することもなく、被削面
粗さも良好となる。また表面粗さがＲmax で０．３μｍ
以下の多層型多結晶ダイヤモンド膜１０を得るには、該
ダイヤモンド膜１０を研磨することによっても達成され
るが、例えば工具切削作用部分と対応した凹形基板の内
面をＲmax で０．３μｍ以下となる様にしておき、この
凹形基板内面に多層型多結晶ダイヤモンド膜１０を析出
させた後剥離し、これを工具切削作用部分にろう付けす
る様にすれば、より簡単にＲmax：０．３μｍ以下の鏡
面を有する気相合成ダイヤモンド工具が得られる。Further, in the vapor phase synthetic diamond cutting tool of the present invention, the surface roughness of the portion corresponding to the rake face of the multilayer polycrystalline diamond film 10 has a surface roughness R max of 0.3 μm.
It is better to have a mirror surface state of m or less. That is, by making the portion corresponding to the rake face a mirror surface state, the discharge of the chips of the work material becomes smooth when the tool is used, and the chips are not welded to the rake face to form the constituent cutting edge. Also, the surface roughness to be machined becomes good. The surface roughness R max is 0.3 μm.
The following multi-layer polycrystalline diamond film 10 can be obtained by polishing the diamond film 10. For example, the inner surface of the concave substrate corresponding to the tool cutting action portion has an R max of 0.3 μm or less. If the multi-layered polycrystalline diamond film 10 is deposited on the inner surface of the concave substrate and then peeled off and brazed to the tool cutting action portion, R max : 0 can be more easily obtained. A vapor phase synthetic diamond tool having a mirror surface of 0.3 μm or less is obtained.
【００２０】本発明の気相合成ダイヤモンド工具は、上
記の様な多層型多結晶ダイヤモンド膜１０を工具母材の
切削作用部分にろう付けによって取り付けたものを基本
的な構成とするものであるが、下記の様な構成によって
も本発明の目的が達成される。即ち、工具母材にろう付
けされる気相合成多結晶ダイヤモンド膜を、表面層とし
てピーク強度比（Ｉ2 ／Ｉ1 ）が０．７以下の層と０．
９以上の層が交互に積層された厚さ２０〜５０μｍ未満
の多結晶ダイヤモンド膜（上記多層型多結晶ダイヤモン
ド膜１０）と、下地層としてピーク強度比（Ｉ2 ／Ｉ
1 ）が０．７以下の多結晶ダイヤモンド膜とを備えた合
計厚さ５０μｍ〜１ｍｍの多結晶ダイヤモンド膜の構成
とし、且つ前記表面層がすくい面となる様に工具母材に
ろう付けによって取り付ける様にしても良い。この様な
構成において、下地層のダイヤモンド層の厚さが５０μ
ｍ以上で多層型多結晶ダイヤモンド層１０の厚さ２０μ
ｍ以上であれば、刃先の欠損や膜の破損を生じない。ま
た表面層の厚さを５０μｍ未満とするのは、それより厚
くしても性能上は変わらないが、成膜の煩雑さが増すだ
けで上記構成を採用する利点が得られないからである。
更に、下地層のダイヤモンド層のピーク強度比（Ｉ2 ／
Ｉ1 ）を０．７以下とするのは、それより高いと非ダイ
ヤモンド炭素成分が多くなり耐摩耗性が劣化するからで
ある。表面層と下地層の合計の厚みを１ｍｍ以下とする
のは、１ｍｍより厚くしても成膜に時間を要するだけで
性能は変わらず、それ以上厚くする利点がないからであ
る。尚この様な構成を採用する場合においても、この多
結晶ダイヤモンド膜の一部を構成する多層型多結晶ダイ
ヤモンド膜１０における、各層の平均厚みδ1 ，δ2 、
厚み比（δ1 ／δ2 ）、ピーク強度比（Ｉ2 ／Ｉ1 ）が
０．７以下の層のダイヤモンドの平均粒径、および切削
作用部分のすくい面に相当する多結晶ダイヤモンドの表
面粗さ等の好ましい範囲は、多層型多結晶ダイヤモンド
膜１０を工具母材にろう付けする場合と同様である。The vapor phase synthetic diamond tool of the present invention has a basic structure in which the above-mentioned multi-layered polycrystalline diamond film 10 is attached to the cutting action portion of the tool base material by brazing. The object of the present invention is also achieved by the following configurations. That is, a vapor-phase synthetic polycrystalline diamond film brazed to a tool base material was used as a surface layer with a layer having a peak intensity ratio (I 2 / I 1 ) of 0.7 or less.
A polycrystalline diamond film having a thickness of 20 to less than 50 μm (the above-mentioned multilayer type polycrystalline diamond film 10) in which 9 or more layers are alternately laminated, and a peak intensity ratio (I 2 / I) as an underlayer.
1 ) A polycrystalline diamond film having a total thickness of 50 μm to 1 mm provided with a polycrystalline diamond film having a thickness of 0.7 or less, and is attached to the tool base material by brazing so that the surface layer becomes a rake face. You can do it as well. In such a structure, the thickness of the base diamond layer is 50 μm.
If the thickness is m or more, the thickness of the multilayer polycrystalline diamond layer 10 is 20μ
If it is m or more, the cutting edge is not damaged and the film is not damaged. The thickness of the surface layer is set to less than 50 μm because even if the surface layer is made thicker than that, the performance does not change, but the merit of adopting the above configuration cannot be obtained only by increasing the complexity of film formation.
Furthermore, the peak intensity ratio (I 2 /
The reason why I 1 ) is set to 0.7 or less is that if it is higher than that, the non-diamond carbon component increases and the wear resistance deteriorates. The total thickness of the surface layer and the underlayer is set to 1 mm or less because even if the thickness is more than 1 mm, it takes time to form a film, the performance does not change, and there is no advantage in increasing the thickness. Even in the case of adopting such a structure, the average thickness δ 1 , δ 2 of each layer in the multilayer polycrystalline diamond film 10 forming a part of the polycrystalline diamond film,
Thickness ratio (δ 1 / δ 2 ), peak intensity ratio (I 2 / I 1 ) average particle diameter of diamond in the layer of 0.7 or less, and surface roughness of polycrystalline diamond corresponding to rake face of cutting action part The preferable range of the thickness and the like is the same as in the case of brazing the multilayer polycrystalline diamond film 10 to the tool base material.
【００２１】本発明の気相合成ダイヤモンド工具を製造
するに当たって、適用する気相合成法については特に制
限するものではなく、例えば水素と炭化水素の原料ガス
を熱電子放射材やマイクロ波無極放電等で励起分解する
化学蒸着法（ＣＶＤ法）が用いられる。またダイヤモン
ド中に非ダイヤモンド炭素を共析させるには、原料ガス
中の炭化水素濃度を高くしたり、熱電子放射材の温度や
マイクロ波無極放電出力を低くしたりするなど合成条件
の変更によっても得られるが、原料ガスに窒素、ジボラ
ン、シラン等の不純物ガスを混入することによっても可
能である。そして、非ダイヤモンド炭素の共析量は合成
条件や不純物ガスの濃度を適当に選ぶことによって調整
することができる。更に本発明で用いる工具母材として
は、工具母材としての使用に耐える硬度および強度を有
し、ダイヤモンド膜をろう付けによって取り付けること
ができるものであれば良く、特に限定するものではない
が、ろう付けによる熱応力の発生が少ないという観点か
らして、ダイヤモンドの熱膨張係数に近い材質を用いる
のが良い。この様なものとして、超硬合金や窒化珪素系
セラミックス等が挙げられる。In producing the vapor-phase synthetic diamond tool of the present invention, the vapor-phase synthesis method to be applied is not particularly limited. For example, the raw material gases of hydrogen and hydrocarbon are thermionic emission materials and microwave non-polar discharge. A chemical vapor deposition method (CVD method) that is excited and decomposed by is used. In order to co-deposit non-diamond carbon in diamond, it is also possible to change the synthesis conditions such as increasing the hydrocarbon concentration in the source gas, lowering the temperature of the thermoelectron emitting material or lowering the microwave non-polar discharge output. Although it can be obtained, it is also possible to mix an impurity gas such as nitrogen, diborane or silane into the raw material gas. The eutectoid amount of non-diamond carbon can be adjusted by appropriately selecting the synthesis conditions and the concentration of the impurity gas. Further, the tool base material used in the present invention is not particularly limited as long as it has hardness and strength to withstand use as a tool base material and can be attached by brazing a diamond film, From the viewpoint that thermal stress due to brazing is small, it is preferable to use a material having a coefficient of thermal expansion close to that of diamond. Examples of such materials include cemented carbide and silicon nitride ceramics.
【００２２】以下本発明を実施例によって更に詳細に説
明するが、下記実施例は本発明を限定する性質のもので
はなく、前・後記の趣旨に徴して設計変更することはい
ずれも本発明の技術的範囲に含まれるものである。The present invention will be described in more detail with reference to the following examples, but the following examples are not intended to limit the present invention, and any design changes made to the gist of the preceding and the following will be applied to the present invention. It is included in the technical scope.
【００２３】[0023]
実施例１ マイクロ波プラズマＣＶＤ法によって、原料ガスとして
Ｈ2 ：２００ｃｃ／ｍｉｎ，ＣＨ4 ：２ｃｃ／ｍｉｎの
混合ガスを用い、圧力：４０ｔｏｒｒ，マイクロ波出
力：１ｋｗの条件でシリコン基板上に３０分で厚さ２μ
ｍのダイヤモンド層５を形成した。その後圧力：１０ｔ
ｏｒｒ，マイクロ波出力：５００ｗに変更して１０分間
合成を行い、より多くの非ダイヤモンド炭素を含む厚さ
２μｍの混合層６を析出させた。以後これらの合成を交
互に繰り返し行い、全層数：４０層，厚み：８０μｍの
多層型多結晶ダイヤモンド膜を作製した。尚このときの
ダイヤモンド層におけるダイヤモンド粒の平均粒径は約
２μｍであった。Example 1 By a microwave plasma CVD method, a mixed gas of H 2 : 200 cc / min and CH 4 : 2 cc / min was used as a source gas, and the pressure was 40 torr and the microwave output was 1 kw on a silicon substrate for 30 minutes. With a thickness of 2μ
m diamond layer 5 was formed. After that pressure: 10t
Orr, microwave output: changed to 500 w and synthesized for 10 minutes to deposit a mixed layer 6 containing a larger amount of non-diamond carbon and having a thickness of 2 μm. Thereafter, these syntheses were alternately repeated to produce a multilayer polycrystalline diamond film having a total number of layers: 40 and a thickness: 80 μm. The average particle size of the diamond particles in the diamond layer at this time was about 2 μm.
【００２４】次に、６０℃の水酸化ナトリウム水溶液に
よってシリコン基板を溶解除去して多層型多結晶ダイヤ
モンド膜１０を取り出した。各層の膜質を調べるため
に、ダイヤモンド膜の断面から各層をビーム径２μｍの
顕微ラマン分析した。その結果は、夫々図３および図４
に示す通りであり、１１００ｃｍ-1から１８００ｃｍ-1
の間のバックグラウンドから測定した１５００ｃｍ-1か
ら１６００ｃｍ-1付近の非ダイヤモンド炭素のピーク強
度（Ｉ2 ）と、１３３３ｃｍ-1のピーク付近をバックグ
ラウンドとして測定したダイヤモンドのピーク強度（Ｉ
1 ）の比（Ｉ2 ／Ｉ1 ）は、ダイヤモンド層５が０．１
１（図３）であり、混合層６が１．３１（図４）であっ
た。Next, the silicon substrate was dissolved and removed with an aqueous sodium hydroxide solution at 60 ° C. to take out the multilayer type polycrystalline diamond film 10. In order to examine the film quality of each layer, each layer was subjected to micro Raman analysis with a beam diameter of 2 μm from the cross section of the diamond film. The results are shown in FIGS. 3 and 4, respectively.
As shown in 1100 cm -1 to 1800 cm -1
Peak intensity of non-diamond carbon around 1500 cm -1 to 1600 cm -1 (I 2 ) measured from the background between 1 and the peak intensity of diamond (I 2 measured near the peak of 1333 cm -1
1 ratio) (I 2 / I 1) is a diamond layer 5 is 0.1
1 (FIG. 3) and the mixed layer 6 was 1.31 (FIG. 4).
【００２５】次に、上記多層型多結晶ダイヤモンド膜１
０をＹＡＧレーザーで切断し、該ダイヤモンド膜１０の
元の基板面側がすくい面となるように超硬チップにろう
付けによって取付け、刃付加工を行いダイヤモンドろう
付けチップを作製した（本発明例１）。尚このときのチ
ップ形状はＳＰＧＮ１２０３０８とした。Next, the above-mentioned multi-layered polycrystalline diamond film 1
No. 0 was cut with a YAG laser, and the diamond film 10 was attached by brazing to a cemented carbide tip so that the original substrate surface side of the diamond film 10 would be the rake face, and bladed to produce a diamond brazed tip (Example 1 of the present invention). ). The chip shape at this time was SPGN120308.
【００２６】このとき比較例として、平均粒径約１０μ
ｍの焼結体ダイヤモンドチップ（比較例１）、およびマ
イクロ波プラズマＣＶＤ法により、原料ガスとしてＨ
2 ：２００ｃｃ／ｍｉｎ，ＣＨ4 ：２ｃｃ／ｍｉｎを用
い、圧力：４０ｔｏｒｒ、マイクロ波出力：１ｋｗでシ
リコン基板上に作製した厚さ：８０μｍ、ピーク強度比
（Ｉ2 ／Ｉ1 ）が０．１の多結晶ダイヤモンド膜をろう
付けによって取付けたチップ（比較例２）についても作
製した。これらのチップについて、被削材としてＡｌ−
２０％Ｓｉ合金の丸棒を用い、切削速度：４００ｍ／ｍ
ｉｎ，切り込み：０．２５ｍｍ，送り：０．１ｍｍ／ｒ
ｅｖの条件で乾式切削を行い、切削性能を評価した。そ
の結果、比較例１，２のチップはいずれも切削５分で欠
損していたが、本発明例１のチップでは切削９０分で欠
損は全く認められなかった。At this time, as a comparative example, the average particle size is about 10 μm.
m sintered diamond tip (Comparative Example 1) and H as a source gas by the microwave plasma CVD method.
2 : 200 cc / min, CH 4 : 2 cc / min, pressure: 40 torr, microwave output: 1 kw, thickness produced on silicon substrate: 80 μm, peak intensity ratio (I 2 / I 1 ) was 0.1. A chip (Comparative Example 2) to which the polycrystalline diamond film of 1 was attached by brazing was also prepared. For these chips, Al-
Cutting speed: 400m / m using a 20% Si alloy round bar
in, notch: 0.25 mm, feed: 0.1 mm / r
Dry cutting was performed under the condition of ev, and the cutting performance was evaluated. As a result, the chips of Comparative Examples 1 and 2 were all chipped after 5 minutes of cutting, but the chip of Example 1 of the present invention was not chipped at 90 minutes of cutting.
【００２７】実施例２ 直径：０．５ｍｍ，長さ：６０ｍｍのタンタルフィラメ
ントを用いた熱フィラメントＣＶＤ法によって、水素−
エタノール蒸気からなる原料ガスを用いて下記表１およ
び表２に示す条件で、本発明の多層型多結晶ダイヤモン
ド膜をモリブデン基板上に形成した。ここで、層を基板
側から数えたときに奇数層の合成条件（表１）および偶
数層の合成条件（表２）は、各々の試料の多層型ダイヤ
モンド膜においては夫々同じとした。Example 2 Hydrogen was produced by a hot filament CVD method using a tantalum filament having a diameter of 0.5 mm and a length of 60 mm.
A multilayer polycrystalline diamond film of the present invention was formed on a molybdenum substrate under the conditions shown in Tables 1 and 2 below using a raw material gas composed of ethanol vapor. Here, when counting the layers from the substrate side, the synthesis conditions for the odd-numbered layers (Table 1) and the synthesis conditions for the even-numbered layers (Table 2) were the same for the multilayer diamond films of each sample.
【００２８】[0028]
【表１】 [Table 1]
【００２９】[0029]
【表２】 [Table 2]
【００３０】この様にして合成した各層の平均厚み、ピ
ーク強度比（Ｉ2 ／Ｉ1 ）、ダイヤモンド層５（試料Ｎ
o.１，２，４，６〜８の奇数層および試料Ｎo.３，５，
９の偶数層）におけるダイヤモンドの平均粒径および全
体の膜厚は、表３に示す通りである。但し、混合層６の
ピーク強度比（Ｉ2 ／Ｉ1 ）が０．９よりも小さかった
試料Ｎo.７および混合層６の厚さが薄い試料Ｎo.８につ
いては、ダイヤモンド粒の成長が見られ、断面観察から
大部分が柱状結晶化していた。The average thickness of each layer thus synthesized, the peak intensity ratio (I 2 / I 1 ), the diamond layer 5 (Sample N
O. 1, 2, 4, 6-8 odd layers and samples No. 3, 5,
Table 3 shows the average particle size of diamond and the total film thickness of the (9 even layers). However, in the sample No. 7 in which the peak intensity ratio (I 2 / I 1 ) of the mixed layer 6 was smaller than 0.9 and in the sample No. 8 in which the mixed layer 6 was thin, the growth of diamond grains was observed. From the cross-sectional observation, most of them were columnar crystallized.
【００３１】[0031]
【表３】 [Table 3]
【００３２】次に、１：１の硝フッ酸水溶液によってモ
リブデン基板を除去し、多層型多結晶ダイヤモンド膜１
０のみを取り出した。以下、実施例１と同様にチップの
形に工具化し、切削性能を評価した。このとき被削材の
形状は、円柱の側面から９０°間隔で長手方向に４枚の
Ａｌ−１６％Ｓｉ合金の板を同じ長さに突き出させたも
のを用い、切削速度：５００ｍ／ｍｉｎ，切り込み：
０．２ｍｍ，送り：０．１ｍｍ／ｒｅｖの切削条件で、
突き出したＡｌ−１６％Ｓｉ合金の外周を長手方向に６
０分断続切削した。切削試験結果は表４に示す通りであ
り、この結果から本発明ダイヤモンドチップは耐欠損性
および耐摩耗性に優れることがわかる。Next, the molybdenum substrate was removed by a 1: 1 aqueous solution of nitric-hydrofluoric acid, and the multilayer polycrystalline diamond film 1 was formed.
Only 0 was taken out. Hereinafter, similarly to Example 1, a tool was formed into a chip shape and the cutting performance was evaluated. At this time, the shape of the work material was four Al-16% Si alloy plates protruding in the same length in the longitudinal direction from the side surface of the cylinder at 90 ° intervals, and the cutting speed was 500 m / min. Notch:
0.2 mm, feed: under cutting conditions of 0.1 mm / rev,
The protruding outer circumference of the Al-16% Si alloy is 6 in the longitudinal direction.
It was cut intermittently for 0 minutes. The cutting test results are shown in Table 4. From these results, it can be seen that the diamond tip of the present invention is excellent in fracture resistance and wear resistance.
【００３３】[0033]
【表４】 [Table 4]
【００３４】実施例３ 実施例２の試料６と同様の条件で、表面層として多層型
多結晶ダイヤモンド膜を作製し、その表面に下地層とし
て単層のダイヤモンドを析出させ、実施例１と同様にし
てチップに加工し、実施例２と同様の切削試験を行っ
た。このときのダイヤモンド層の厚み、ピーク強度比
（Ｉ2 ／Ｉ1 ）および切削試験結果等を表５に示す。表
５において、試料Ｎo.１２は第１層厚みが薄すぎたため
に切削１０分で欠損した。また試料Ｎo.１３は第２層中
に比ダイヤモンド炭素が多く含まれたため欠損はしなか
ったものの、逃げ面摩耗が大きくなった。これに対し、
試料Ｎo.１０，１２は本発明の要件を満たす実施例であ
り、耐欠損性および耐摩耗性のいずれにも優れていた。
この結果から明らかな様に、多層型多結晶ダイヤモンド
層１０と単層のダイヤモンド層の複合体でも耐欠損性に
優れることがわかる。Example 3 Under the same conditions as in Sample 6 of Example 2, a multilayer polycrystalline diamond film was prepared as a surface layer, and a single layer of diamond was deposited as an underlayer on the surface, and the same procedure as in Example 1 was performed. Then, it was processed into a chip, and the same cutting test as in Example 2 was performed. Table 5 shows the thickness of the diamond layer, the peak intensity ratio (I 2 / I 1 ), the cutting test results, and the like at this time. In Table 5, Sample No. 12 was chipped after 10 minutes of cutting because the first layer was too thin. Further, in sample No. 13, the diamond diamond carbon was contained in the second layer in a large amount, so that no damage was caused, but the flank wear was large. In contrast,
Samples Nos. 10 and 12 are examples satisfying the requirements of the present invention and were excellent in both fracture resistance and wear resistance.
As is clear from these results, it can be seen that even a composite of the multilayer polycrystalline diamond layer 10 and the single diamond layer has excellent fracture resistance.
【００３５】[0035]
【表５】 [Table 5]
【００３６】実施例４ 表面粗さがＲmax で０．４６μｍと０．２μｍのＭｏ基
板上に、実施例１と同様の条件でマイクロ波プラズマＣ
ＶＤ法により厚さ１２０μｍの多層型多結晶ダイヤモン
ド膜１０を析出させ、１：１の硝フッ酸水溶液に浸漬す
ることにより多層型多結晶ダイヤモンド膜１０のみを取
り出した。このときの多層型多結晶ダイヤモンド膜１０
の元の基板側の表面粗さは基板の表面がほぼ転写されて
おり、それぞれ、Ｒmax ：０．４７μｍ，０．２１μｍ
を示していた。Example 4 Microwave plasma C was formed under the same conditions as in Example 1 on a Mo substrate having a surface roughness of R max of 0.46 μm and 0.2 μm.
The multilayer polycrystalline diamond film 10 having a thickness of 120 μm was deposited by the VD method and immersed in a 1: 1 hydrofluoric acid nitric acid aqueous solution to take out only the multilayer polycrystalline diamond film 10. Multilayer type polycrystalline diamond film 10 at this time
As for the surface roughness of the original substrate side, the surface of the substrate is almost transferred, and R max : 0.47 μm, 0.21 μm, respectively.
Was shown.
【００３７】次いで、多層型多結晶ダイヤモンド膜１０
の元の基板側の表面がチップのすくい面となる様に、チ
ップにろう付けによって取付け、刃付加工を施してＳＰ
ＧＮ１２０３０８形状のチップとした。これらのチップ
に対して、Ａｌ−１６％Ｓｉ合金丸棒の外周を、切削速
度：４００ｍ／ｍｉｎ，切り込み：０．２５ｍｍ，送り
速度：０．１ｍｍ／ｒｅｖの条件で、６０分間連続切削
した。各チップとも欠損は見られなかったものの、すく
い面粗さ：Ｒmax ：０．４７μｍのチップはすくい面に
被削材の溶着が見られ、被削面粗さはＲmax ：４．８μ
ｍであった。一方、すくい面粗さＲmax ：０．２１μｍ
のチップは溶着が無く、被削面粗さもＲ max ：２．１μ
ｍと良好であった。Next, the multilayer polycrystalline diamond film 10 is formed.
Check that the original substrate side surface of the
It is attached to the cup by brazing, it is processed with a blade and it is SP
A GN120308 shaped chip was used. These chips
In contrast, the outer circumference of the Al-16% Si alloy round bar was cut at the cutting speed.
Degree: 400 m / min, depth of cut: 0.25 mm, feed
Speed: 0.1 mm / rev, continuous cutting for 60 minutes
did. No chips were found on each chip, but
Roughness: Rmax : 0.47μm tip on rake face
Welding of the work material is seen, and the work surface roughness is Rmax : 4.8μ
It was m. On the other hand, rake surface roughness Rmax : 0.21 μm
The tip has no welding and the surface roughness is R max : 2.1μ
m was good.
【００３８】[0038]
【発明の効果】本発明は以上の様に構成されており、多
結晶ダイヤモンド膜をダイヤモンド層と混合層を交層に
積層した多層型の膜構造とすることによって、粒状組織
に近い多結晶ダイヤモンド膜とすることができ、高靭性
で耐欠損性および耐摩耗性に優れた気相合成ダイヤモン
ド切削工具が実現できた。The present invention is configured as described above, and the polycrystalline diamond film has a multi-layered film structure in which a diamond layer and a mixed layer are laminated in an alternating layer so that the polycrystalline diamond film has a grain structure close to that of the polycrystalline diamond. It was possible to form a film, and it was possible to realize a vapor-phase synthetic diamond cutting tool that has high toughness and excellent fracture resistance and wear resistance.
【図１】本発明に係る多層型多結晶ダイヤモンド膜の作
製過程と断面構造を示す図である。FIG. 1 is a diagram showing a manufacturing process and a cross-sectional structure of a multilayer polycrystalline diamond film according to the present invention.
【図２】通常の多結晶ダイヤモンド膜の成長過程と断面
構造を示す図である。FIG. 2 is a diagram showing a growth process and a sectional structure of a normal polycrystalline diamond film.
【図３】ダイヤモンド層５のラマンスペクトルを示すグ
ラフである。FIG. 3 is a graph showing a Raman spectrum of a diamond layer 5.
【図４】混合層６のラマンスペクトルを示すグラフであ
る。FIG. 4 is a graph showing a Raman spectrum of the mixed layer 6.
【符号の説明】 １ 基板 ２ ダイヤモンド核 ３ ダイヤモンド粒 ４ 柱状組織 ５ ダイヤモンド層 ６ 混合層 １０ 多層型多結晶ダイヤモンド膜[Explanation of Codes] 1 substrate 2 diamond nucleus 3 diamond grain 4 columnar structure 5 diamond layer 6 mixed layer 10 multi-layered polycrystalline diamond film
Claims (6)
イヤモンド膜が、工具母材のすくい面側の切削作用部分
にろう付けによって取付けられた気相合成ダイヤモンド
切削工具において、前記多結晶ダイヤモンド膜は、ラマ
ン分光分析によるダイヤモンドのピーク強度Ｉ1 に対す
る非ダイヤモンド炭素のピーク強度Ｉ 2 の強度比（Ｉ2
／Ｉ1 ）が０．７以下の層と、当該強度比（Ｉ2 ／Ｉ
1 ）が０．９以上の層が交互に積層された多層型多結晶
ダイヤモンド膜であることを特徴とする靭性に優れた気
相合成ダイヤモンド切削工具。1. A polycrystalline da synthesized by a vapor phase synthesis method.
The ear diamond film is the cutting action part on the rake face side of the tool base material.
Vapor-phase synthetic diamond mounted by brazing
In the cutting tool, the polycrystalline diamond film is
Peak intensity of diamond by electron spectroscopy I1 Against
Peak intensity of non-diamond carbon I 2 Intensity ratio (I2
/ I1 ) Is 0.7 or less, and the intensity ratio (I2 / I
1 ) Is 0.9 or more layers are laminated alternately.
It has excellent toughness and is characterized by being a diamond film.
Phase synthetic diamond cutting tool.
の各層の平均厚み（δ1 ）が０．２〜５μｍであると共
に、前記強度比（Ｉ2 ／Ｉ1 ）が０．９以上の各層の平
均厚み（δ2 ）が０．０２〜５μｍであり、且つ層厚比
（δ1 ／δ2）が０．５以上である請求項１に記載の気
相合成ダイヤモンド切削工具。2. The average thickness (δ 1 ) of each layer having the intensity ratio (I 2 / I 1 ) of 0.7 or less is 0.2 to 5 μm, and the intensity ratio (I 2 / I 1 ) is The vapor-phase synthetic diamond according to claim 1, wherein the average thickness (δ 2 ) of each layer of 0.9 or more is 0.02 to 5 μm, and the layer thickness ratio (δ 1 / δ 2 ) is 0.5 or more. Cutting tools.
０μｍ以上である請求項１または２に記載の気相合成ダ
イヤモンド切削工具。3. The multilayer polycrystalline diamond film has a thickness of 5
The vapor phase synthetic diamond cutting tool according to claim 1 or 2, which has a diameter of 0 µm or more.
ダイヤモンド膜が表面層として２０〜５０μｍ未満の厚
さで形成されると共に、前記強度比（Ｉ2 ／Ｉ1 ）が
０．７以下の層が下地層として形成され、且つ合計厚さ
が５０μｍ〜１ｍｍである気相合成多結晶ダイヤモンド
膜が、工具母材の切削作用部分に、前記表面層がすくい
面となる様にろう付けよって取付けられたものであるこ
とを特徴とする靭性に優れた気相合成ダイヤモンド切削
工具。4. The multilayer polycrystalline diamond film according to claim 1 or 2 is formed as a surface layer with a thickness of 20 to less than 50 μm, and the strength ratio (I 2 / I 1 ) is 0.7. A vapor phase synthesized polycrystalline diamond film having the following layers formed as a base layer and having a total thickness of 50 μm to 1 mm is brazed to the cutting action portion of the tool base material so that the surface layer serves as a rake face. Therefore, the vapor phase synthetic diamond cutting tool with excellent toughness is characterized by being attached.
度比（Ｉ2 ／Ｉ1 ）が０．７以下の層のダイヤモンドの
平均粒径が０．２〜５μｍである請求項１〜４のいずれ
かに記載の気相合成ダイヤモンド切削工具。5. The average grain size of diamond in a layer having a strength ratio (I 2 / I 1 ) of 0.7 or less in a multilayer polycrystalline diamond film is 0.2 to 5 μm. A vapor phase synthetic diamond cutting tool according to any one of the above.
型多結晶ダイヤモンド膜の表面粗さがＲｍａｘで０．３
μｍ以下である請求項１〜５のいずれかに記載の気相合
成ダイヤモンド切削工具。6. The surface roughness of a multi-layer type polycrystalline diamond film corresponding to the rake face of the cutting action portion is 0.3 in Rmax.
The vapor phase synthetic diamond cutting tool according to any one of claims 1 to 5, which has a diameter of not more than μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8652893A JPH06297207A (en) | 1993-04-13 | 1993-04-13 | Vapor phase synthetic diamond cutting tool with high toughness |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8652893A JPH06297207A (en) | 1993-04-13 | 1993-04-13 | Vapor phase synthetic diamond cutting tool with high toughness |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06297207A true JPH06297207A (en) | 1994-10-25 |
Family
ID=13889496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8652893A Withdrawn JPH06297207A (en) | 1993-04-13 | 1993-04-13 | Vapor phase synthetic diamond cutting tool with high toughness |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06297207A (en) |
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|---|---|---|---|---|
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| JP2010194629A (en) * | 2009-02-23 | 2010-09-09 | Union Tool Co | Diamond coat for cutting tool |
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1993
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006138011A (en) * | 2004-10-14 | 2006-06-01 | Sumitomo Electric Ind Ltd | Diamond film-coated member, and its manufacturing method |
| JP2010194629A (en) * | 2009-02-23 | 2010-09-09 | Union Tool Co | Diamond coat for cutting tool |
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| JP2010221352A (en) * | 2009-03-24 | 2010-10-07 | Mitsubishi Materials Corp | Diamond coated tool exhibiting superior wear resistance in heavy cutting |
| JP2011020179A (en) * | 2009-07-13 | 2011-02-03 | Mitsubishi Materials Corp | Diamond-coated tool having excellent chipping resistance and wear resistance |
| JP2011098424A (en) * | 2009-11-09 | 2011-05-19 | Mitsubishi Materials Corp | Diamond-coated tool exhibiting excellent chipping resistance and excellent wear resistance |
| CN102059361A (en) * | 2009-11-16 | 2011-05-18 | 三菱综合材料株式会社 | Diamond wrapping tool with excellent stripping resistance and wear resistance |
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