JPH0628202B2 - Negative characteristic thermistor - Google Patents
Negative characteristic thermistorInfo
- Publication number
- JPH0628202B2 JPH0628202B2 JP62008830A JP883087A JPH0628202B2 JP H0628202 B2 JPH0628202 B2 JP H0628202B2 JP 62008830 A JP62008830 A JP 62008830A JP 883087 A JP883087 A JP 883087A JP H0628202 B2 JPH0628202 B2 JP H0628202B2
- Authority
- JP
- Japan
- Prior art keywords
- thermistor
- element body
- thermistor element
- negative characteristic
- coating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 産業上の利用分野 本発明は感温素子として用いられる負特性サーミスタに
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a negative characteristic thermistor used as a temperature sensitive element.
従来の技術及びその問題点 従来の負特性サーミスタとしてはサーミスタ素体の両端
面に銀やパラジウムを主成分とする電極を形成した構成
のものが一般的である。2. Description of the Related Art Conventional Problems and Problems Thereof In general, a conventional negative characteristic thermistor has a structure in which electrodes having silver or palladium as a main component are formed on both end faces of a thermistor element body.
ところで、上記従来の負特性サーミスタにおいては、プ
リント基板等にサーミスタを半田付けする場合、半田の
熱によって溶けたフラックスがサーミスタ素体内に浸透
して、サーミスタの特性に変化を来すという問題点があ
る。By the way, in the above-mentioned conventional negative characteristic thermistor, when soldering the thermistor to a printed circuit board or the like, the flux melted by the heat of the solder penetrates into the thermistor element body, which causes a change in the characteristics of the thermistor. is there.
また、サーミスタ実装後も、サーミスタ素体が外部に露
出したままであるので、外部の湿気やガス等がサーミス
タ素体内に侵入してサーミスタの特性が変化するという
問題点がある。Further, since the thermistor element body is still exposed to the outside even after mounting the thermistor, there is a problem that external moisture, gas, or the like enters the thermistor element body to change the characteristics of the thermistor.
本発明はこのような問題点に鑑みなされたもので、プリ
ント基板等への負特性サーミスタ実装時にサーミスタ素
体が直接影響を受け難く、かつ温度を除く外部環境の影
響をも受け難い負特性サーミスタを提供することを目的
とする。The present invention has been made in view of the above problems, and the negative characteristic thermistor in which the thermistor element body is unlikely to be directly affected when the negative characteristic thermistor is mounted on a printed circuit board or the like, and is not easily affected by the external environment except temperature. The purpose is to provide.
問題点を解決するための手段 上記目的を達成するために本発明は、サーミスタ素体の
相対向する１組の端面を露出させた状態でサーミスタ素
体が無機物よりなる被覆層で被覆され、前記サーミスタ
素体の露出端面、若しくは該端面及び被覆層の前記端面
寄りの一部に外部取出電極を形成してなることを特徴と
している。Means for Solving the Problems In order to achieve the above object, the present invention is directed to a thermistor element body covered with a coating layer made of an inorganic material in a state where a pair of opposing end surfaces of the thermistor element body are exposed. An external extraction electrode is formed on the exposed end surface of the thermistor element body or a part of the end surface and the coating layer near the end surface.
作 用 上記構成によれば、サーミスタ素子は無機物よりなる緻
密な被覆層に保護されて外部とは非接触な状態を保てる
ので、外部からサーミスタ素体内に異物が侵入する恐れ
がなく、過酷な雰囲気下での使用も可能となる。Operation According to the above configuration, the thermistor element is protected by the dense coating layer made of an inorganic material and can be kept in a non-contact state with the outside.Therefore, there is no risk of foreign matter entering the thermistor body from the outside, and the harsh atmosphere is avoided. It can be used below.
また、無機物の被覆層で被覆することによりサーミスタ
全体としての強度が高まる。Further, the strength of the thermistor as a whole is increased by coating with the inorganic coating layer.
実施例 第１図は本発明の一実施例としての負特性サーミスタを
示し、図中１は厚さ０．５０mm、巾１．１mm、長さ３．
２mmのサーミスタ素子、２ａ，２ｂは各々該サーミスタ
素体１の表裏両面および両側面に設けられた例えばアル
ミナ等の無機物よりなる厚さ０．２５mm、長さ３．２mm
の被覆層で、これによって前記サーミスタ素体１が被覆
されている。３ａ，３ｂは前記サーミスタ素体１の端面
及び被覆層２ａ，２ｂの端面よりの一部に設けられた例
えば銀−パラジウムよりなる外部取出電極である。EXAMPLE FIG. 1 shows a negative characteristic thermistor as an example of the present invention, in which 1 indicates a thickness of 0.50 mm, a width of 1.1 mm and a length of 3.
The thermistor elements 2 mm and 2 a each having a thickness of 0.25 mm and a length of 3.2 mm, which are made of an inorganic material such as alumina, are provided on both front and back surfaces and both side surfaces of the thermistor body 1.
The above-mentioned coating layer covers the thermistor element body 1. Reference numerals 3a and 3b denote external extraction electrodes made of, for example, silver-palladium provided on the end faces of the thermistor element body 1 and a part of the end faces of the coating layers 2a and 2b.
この様な構造の負特性サーミスタはサーミスタ素体が緻
密な無機物よりなる被覆層に覆われているので、負特性
サーミスタ全体としての強度が高まると共に、プリント
基板等に半田付けする際に半田の熱によって溶けたフラ
ックスは被覆層にはばまれてサーミスタ素体内に侵入す
る恐れはなく、実装後も外部の湿気やガス等も侵入する
恐れがない。従って負特性サーミスタとしての特性は外
部からの悪影響を受ける恐れがなくなり、過酷な雰囲気
下での使用が可能となる。In a negative-characteristic thermistor having such a structure, the thermistor element body is covered with a coating layer made of a dense inorganic material, so that the strength of the negative-characteristic thermistor as a whole is increased and the heat of the solder when soldering to a printed circuit board or the like is increased. The flux thus melted is prevented from penetrating into the thermistor body due to being scattered by the coating layer, and there is no risk of external moisture or gas entering even after mounting. Therefore, the characteristics of the negative characteristic thermistor are not likely to be adversely affected from the outside and can be used in a harsh atmosphere.
上記のような構造の負特性サーミスタは次の如くして製
造できる。例えばマンガン、ニッケルの酸化物からなる
スラリーを作成し、このスラリーより例えばドクターブ
レード法を用いて第２図(イ)に示す如き厚さ０．６０mm
のサーミスタ素体シート１１を作成する。他方、被覆層
となる無機物の例えばアルミナからなるスラリーを２枚
作成し、このスラリーより例えばドクターブレード法を
用いて厚さ０．３０mmのアルミナシート１２ａ，１２ｂ
を作成する。このアルミナシート１２ａ，１２ｂは、サ
ーミスタ素体シート１１よりも幅広に形成してある。こ
のアルミナシート１２ａ，１２ｂで前記サーミスタ素体
シート１１をはさみ圧着すると、サーミスタ素体１１の
幅方向に突出しているアルミナシート１２ａ，１２ｂが
互いにサーミスタ素体シート１１の側面部において圧着
され、サーミスタ素体シート１１の両側面をも被覆する
ことになる。この段階でサーミスタ素体シート１１は２
枚のアルミナシート１２ａ，１２ｂにより被覆された状
態のグリーンシートとなる。このグリーンシートを第２
図(ロ)に破線で示したカットマークに沿って切断して、
所定の大きさのチップを作製する。このチップを例えば
１３００〜１４００℃で２Ｈｒ時間焼成し、チップ型負
特性サーミスタ素体を作製する。この段階でサーミスタ
素体シート１１は厚み０．５０mmのサーミスタ素体１に
なり、アルミナシート１２ａ，１２ｂは各々厚み０．２
５mmの被覆層２ａ，２ｂになる。次にこのチップのサー
ミスタ素体が露出している端面及び該端面よりの被覆層
の一部に、例えば銀−パラジウムよりなる電極ペースト
を塗布乾燥し、焼付ける。The negative characteristic thermistor having the above structure can be manufactured as follows. For example, a slurry made of oxides of manganese and nickel is prepared, and a thickness of 0.60 mm as shown in FIG.
The thermistor body sheet 11 is prepared. On the other hand, two slurries made of an inorganic material such as alumina to form the coating layer are prepared, and from this slurry, for example, a doctor blade method is used to form alumina sheets 12a and 12b having a thickness of 0.30 mm.
To create. The alumina sheets 12a and 12b are formed wider than the thermistor body sheet 11. When the thermistor element body sheet 11 is sandwiched between the alumina sheets 12a and 12b and pressure-bonded, the alumina sheets 12a and 12b protruding in the width direction of the thermistor element body 11 are pressure-bonded to each other on the side surfaces of the thermistor element body sheet 11 to form the thermistor element body. Both side surfaces of the body sheet 11 are also covered. At this stage, the thermistor body sheet 11 has 2
The green sheet is covered with the alumina sheets 12a and 12b. This green sheet is second
Cut along the cut mark shown by the broken line in the figure (b),
A chip having a predetermined size is manufactured. This chip is fired at, for example, 1300 to 1400 ° C. for 2 hours to manufacture a chip type negative characteristic thermistor element. At this stage, the thermistor body sheet 11 becomes the thermistor body 1 having a thickness of 0.50 mm, and the alumina sheets 12a and 12b each have a thickness of 0.2.
The coating layers 2a and 2b have a thickness of 5 mm. Next, an electrode paste made of, for example, silver-palladium is applied to the end face where the thermistor element body of this chip is exposed and a part of the coating layer from the end face, dried, and baked.
上記のような製造方法を用いれば、サーミスタ素体と無
機物被覆層とは未焼成の段階で積層した後、同時焼結し
て一体化することができ、外部取出電極の形成を除け
ば、この一体化によって負特性サーミスタの製造を完了
するので、製造工程が少なくなり負特性サーミスタが簡
単に製造できる。If the above-described manufacturing method is used, the thermistor element body and the inorganic coating layer can be laminated at a non-fired stage and then simultaneously sintered to be integrated, except for the formation of the external extraction electrode. Since the production of the negative characteristic thermistor is completed by the integration, the manufacturing process is reduced and the negative characteristic thermistor can be easily produced.
尚、上記実施例においてはチップ型の負特性サーミスタ
について示したが、本発明はチップ型に限るものではな
い。Although the chip-type negative characteristic thermistor is shown in the above embodiment, the present invention is not limited to the chip-type.
また、上記実施例においては電極は被覆層の一部にまで
及ぶ範囲に形成したものについて示したが、電極はサー
ミスタ素体が外部に露出しない程度、少なくともサーミ
スタ素子の露出端面をすべて覆う範囲に形成されていれ
ば良い。In addition, in the above-mentioned examples, the electrodes are shown to be formed in a range extending to a part of the coating layer, but the electrodes are formed in such a range that the thermistor element body is not exposed to the outside, at least the exposed end surface of the thermistor element is entirely covered. It should be formed.
発明の効果 本発明の負特性サーミスタによれば、サーミスタ素体を
無機物の被覆層で被覆するので、製法としてサーミスタ
素体シートと無機物被覆層シートを積層し焼結するとい
う工程の少ない簡易な方法をとることができると共に、
構造的にはサーミスタ素子の両平面および両側面が無機
物被覆層に被覆されているので、十分な強度が得られる
という効果がある。更に無機物被覆層は緻密であるの
で、過酷な環境下でもサーミスタ素体の特性に悪影響を
与える外的要因からサーミスタ素体を保護すると共に、
平側面を被覆しているのでその寸法精度を均一にでき、
外部取出電極の寸法精度に起因する抵抗値の変動を積極
的に抑制できて、安定した抵抗値を有する信頼度の高い
サーミスタ素体を得られる効果を有する。EFFECTS OF THE INVENTION According to the negative characteristic thermistor of the present invention, the thermistor element body is coated with the inorganic coating layer, so that a simple method with few steps of laminating and sintering the thermistor element sheet and the inorganic coating layer sheet as a manufacturing method. And you can take
Structurally, the both surfaces and both surfaces of the thermistor element are covered with the inorganic coating layer, so that there is an effect that sufficient strength can be obtained. Furthermore, since the inorganic coating layer is dense, it protects the thermistor body from external factors that adversely affect the characteristics of the thermistor body even in a harsh environment.
Since the flat side is covered, the dimensional accuracy can be made uniform,
This has the effect of positively suppressing fluctuations in the resistance value due to the dimensional accuracy of the external extraction electrode, and obtaining a highly reliable thermistor element body having a stable resistance value.
第１図は本発明の一実施例を示す負特性サーミスタの断
面図、第２図(イ)(ロ)は各々本発明の負特性サーミスタの
一製造方法を示す図である。 １……サーミスタ素体、２ａ，２ｂ……被覆層、 ３ａ，３ｂ……外部取出電極。FIG. 1 is a sectional view of a negative characteristic thermistor showing an embodiment of the present invention, and FIGS. 2 (a) and 2 (b) are views showing one method of manufacturing the negative characteristic thermistor of the present invention. 1 ... Thermistor element body, 2a, 2b ... Coating layer, 3a, 3b ... External extraction electrode.
Claims (1)
露出させた状態でサーミスタ素体が無機物よりなる被覆
層で被覆され、前記サーミスタ素体の露出端面、若しく
は該端面及び被覆層の前記端面寄りの一部に外部取出電
極を形成してなる負特性サーミスタ。1. A thermistor element body is covered with a coating layer made of an inorganic material in a state where a pair of opposite end surfaces of the thermistor element body are exposed, and the exposed end surface of the thermistor element body, or of the end surface and the coating layer. A negative characteristic thermistor in which an external extraction electrode is formed in a part near the end face.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62008830A JPH0628202B2 (en) | 1987-01-16 | 1987-01-16 | Negative characteristic thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62008830A JPH0628202B2 (en) | 1987-01-16 | 1987-01-16 | Negative characteristic thermistor |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7128161A Division JP2755212B2 (en) | 1995-05-26 | 1995-05-26 | Manufacturing method of negative characteristic thermistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63177402A JPS63177402A (en) | 1988-07-21 |
| JPH0628202B2 true JPH0628202B2 (en) | 1994-04-13 |
Family
ID=11703703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62008830A Expired - Lifetime JPH0628202B2 (en) | 1987-01-16 | 1987-01-16 | Negative characteristic thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0628202B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4993142A (en) * | 1989-06-19 | 1991-02-19 | Dale Electronics, Inc. | Method of making a thermistor |
| JPH03165005A (en) * | 1989-11-22 | 1991-07-17 | Matsushita Electric Ind Co Ltd | Chip-shaped thermistor |
| JPH0982504A (en) * | 1995-09-11 | 1997-03-28 | Mitsubishi Materials Corp | Chip thermistor and its manufacture |
| JP3269404B2 (en) * | 1996-10-02 | 2002-03-25 | 三菱マテリアル株式会社 | Chip type thermistor and manufacturing method thereof |
| DE10159451A1 (en) * | 2001-12-04 | 2003-06-26 | Epcos Ag | Electrical component with a negative temperature coefficient |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6025006B2 (en) * | 1980-02-01 | 1985-06-15 | 株式会社日立製作所 | Voltage nonlinear resistor |
| JPS56150802A (en) * | 1980-04-23 | 1981-11-21 | Tdk Electronics Co Ltd | Chip type ptc thermistor and method of manufacturing same |
| JPH0547444Y2 (en) * | 1986-10-22 | 1993-12-14 |
-
1987
- 1987-01-16 JP JP62008830A patent/JPH0628202B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63177402A (en) | 1988-07-21 |
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