JPH06264223A - Formation of silicon dioxide film - Google Patents
Formation of silicon dioxide filmInfo
- Publication number
- JPH06264223A JPH06264223A JP5535893A JP5535893A JPH06264223A JP H06264223 A JPH06264223 A JP H06264223A JP 5535893 A JP5535893 A JP 5535893A JP 5535893 A JP5535893 A JP 5535893A JP H06264223 A JPH06264223 A JP H06264223A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- silicon dioxide
- gate valve
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、液晶表示素子に用いる
透明導電膜の隣接膜として二酸化けい素膜を成膜する場
合の成膜方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming method for forming a silicon dioxide film as a film adjacent to a transparent conductive film used in a liquid crystal display device.
【０００２】[0002]
【従来の技術】液晶表示素子は、ガラス基板の間に液晶
分子をはさみ込み、ガラス基板上に形成した透明電極か
ら液晶分子に電圧を印加する構造を有している。透明電
極の材料はＩＴＯ(Indium-Tin Oxide)が用いられ、透明
電極の形成には真空蒸着法やスパッタリング法が使用さ
れている。ガラス基板には安価なソーダライムガラスが
用いられることが多いが、ソーダライムガラスはナトリ
ウムを含有しており、ナトリウムが液晶中に溶けだすと
液晶は劣化するため、ガラス基板上にナトリウムのバリ
ア層として二酸化けい素（以下ＳｉＯ2 と表示する）膜
を形成しておき、ＳｉＯ2 膜の上に透明電極であるＩＴ
Ｏ膜を形成する方法が用いられている。2. Description of the Related Art A liquid crystal display device has a structure in which liquid crystal molecules are sandwiched between glass substrates and a voltage is applied to the liquid crystal molecules from a transparent electrode formed on the glass substrate. ITO (Indium-Tin Oxide) is used as the material of the transparent electrode, and a vacuum deposition method or a sputtering method is used to form the transparent electrode. Inexpensive soda lime glass is often used for the glass substrate, but soda lime glass contains sodium, and when sodium begins to dissolve in the liquid crystal, the liquid crystal deteriorates, so a sodium barrier layer on the glass substrate. A silicon dioxide (hereinafter referred to as SiO 2 ) film is formed as a film, and a transparent electrode, IT, is formed on the SiO 2 film.
A method of forming an O film is used.
【０００３】ＳｉＯ2 膜の形成方法は溶媒に浸漬する方
法の他に、真空容器内でスパッタリング法や真空蒸着法
で成膜し、真空を保ったままＩＴＯ膜を成膜する方法が
ある。後者は真空成膜法を用いるため、平滑で緻密なＳ
ｉＯ2 膜を得ることができるのが特徴である。In addition to the method of immersing in a solvent, the method of forming a SiO 2 film includes a method of forming a film by a sputtering method or a vacuum evaporation method in a vacuum container, and a method of forming an ITO film while maintaining a vacuum. The latter uses a vacuum film-forming method, so smooth and dense S
The feature is that an iO 2 film can be obtained.
【０００４】ＩＴＯ膜は基板温度を２００℃以上として
成膜した場合には多結晶膜となる。この多結晶ＩＴＯ膜
は成膜後に大気中で３００℃程度に加熱した状態で放置
し、再び、室温に戻すとＩＴＯ膜のシート抵抗が成膜直
後と比較して上昇することが知られている。これは温度
上昇によりＩＴＯ膜中の結晶粒界から大気中の酸素が浸
入してＩＴＯの導電機構の一つとされている酸素欠陥を
減少させ、結果的に抵抗が上昇するためと考えられる。
このような加熱による抵抗の上昇は、液晶製造のプロセ
スにおいて、ＩＴＯ膜の形成後に３００℃前後に基板を
加熱しなければならない工程がある場合には問題とな
る。抵抗が上昇すると、液晶ディスプレイは表示速度な
どの表示品質の低下が避けられず、ＩＴＯ膜を加熱した
時の抵抗上昇は極力抑制することが必要である。The ITO film becomes a polycrystalline film when formed at a substrate temperature of 200 ° C. or higher. It is known that when this polycrystalline ITO film is left in a state of being heated to about 300 ° C. in the air after being formed and then returned to room temperature, the sheet resistance of the ITO film is increased as compared with that immediately after the film formation. . It is considered that this is because oxygen in the atmosphere penetrates from the crystal grain boundaries in the ITO film due to the temperature rise to reduce oxygen defects, which is one of the conductive mechanisms of ITO, and consequently the resistance increases.
The increase in resistance due to such heating becomes a problem in the process of manufacturing a liquid crystal when there is a step in which the substrate needs to be heated to about 300 ° C. after the ITO film is formed. When the resistance increases, the display quality of the liquid crystal display is unavoidably deteriorated, and it is necessary to suppress the resistance increase when the ITO film is heated as much as possible.
【０００５】特に、ＳｉＯ2 膜は成分に酸素を含むた
め、ＳｉＯ2 膜上にＩＴＯ膜を成膜する時にはＳｉＯ2
中の酸素が成膜中のＩＴＯ膜に影響を与えやすい。ＩＴ
Ｏ成膜時に酸素が過剰になるとＩＴＯの結晶粒は小さく
なる傾向があるため、ＳｉＯ2膜中の酸素が遊離しやす
いような場合には、ＩＴＯは結晶粒が小さい、すなわ
ち、結晶粒界が多い膜となる。結晶粒界が多いＩＴＯ膜
は大気中で熱処理した場合に大気中の酸素が浸入しやす
く、抵抗上昇が大きくなることが避けられない。In particular, since an oxygen-containing SiO 2 film component, when depositing the ITO film on the SiO 2 film SiO 2
Oxygen inside tends to affect the ITO film during film formation. IT
If oxygen is excessive during O film formation, ITO crystal grains tend to be small. Therefore, if oxygen in the SiO 2 film is likely to be liberated, ITO has small crystal grains, that is, crystal grain boundaries There are many films. When an ITO film having many crystal grain boundaries is subjected to heat treatment in the atmosphere, oxygen in the atmosphere is easily infiltrated, and it is unavoidable that the resistance rises greatly.
【０００６】ＳｉＯ2 膜を、アルゴンガスやアルゴンと
酸素との混合ガスを用いてスパッタ法あるいはマグネト
ロンスパッタ法により成膜すると、ＳｉＯ2 膜は比較的
酸素が遊離しやすいものとなる。このため従来はＩＴＯ
膜の成膜時にＳｉＯ2 膜の酸素の作用を抑えることがで
きず、結晶粒界が比較的多いＩＴＯ膜しか得ることがで
きなかった。そのためＩＴＯ膜の大気中での熱処理時の
抵抗上昇を抑えることができなかった。When a SiO 2 film is formed by a sputtering method or a magnetron sputtering method using argon gas or a mixed gas of argon and oxygen, the SiO 2 film becomes relatively easy to release oxygen. For this reason, the conventional ITO
When forming the film, the action of oxygen in the SiO 2 film could not be suppressed, and only an ITO film having a relatively large number of crystal grain boundaries could be obtained. Therefore, it was not possible to suppress the resistance increase of the ITO film during the heat treatment in the atmosphere.
【０００７】尚、この種に関連するものとしては、特開
昭61−172340号公報が挙げられる。[0007] Japanese Patent Application Laid-Open No. 61-172340 can be cited as one related to this type.
【０００８】[0008]
【発明が解決しようとする課題】ＩＴＯ膜を、たとえ
ば、液晶表示素子に使用する場合、透明電極であるＩＴ
Ｏ膜の抵抗値が大きいと液晶表示素子は表示速度などの
表示品質が劣化する。ところが液晶表示素子の製造工程
では基板温度が最高３００℃程度に達することがあるた
め、最終的にＩＴＯ膜の抵抗値は成膜直後より上昇する
ことが避けられない。When an ITO film is used for a liquid crystal display device, for example, an IT film which is a transparent electrode is used.
When the resistance value of the O film is large, the display quality such as the display speed of the liquid crystal display element deteriorates. However, in the manufacturing process of the liquid crystal display element, the substrate temperature may reach a maximum of about 300 ° C., so that the resistance value of the ITO film eventually inevitably rises from immediately after the film formation.
【０００９】本発明の目的は基板加熱処理後のＩＴＯ膜
の抵抗上昇を極力抑えることにある。An object of the present invention is to suppress the resistance increase of the ITO film after the substrate heat treatment as much as possible.
【００１０】[0010]
【課題を解決するための手段】前記課題は、ＳｉＯ2 膜
の成膜時の成膜雰囲気中に水素か、少なくとも水素原子
を含む分子を導入することで解決される。The above-mentioned problems can be solved by introducing hydrogen or a molecule containing at least a hydrogen atom into a film formation atmosphere at the time of forming a SiO 2 film.
【００１１】[0011]
【作用】ＳｉＯ2 膜の成膜時に水素を導入することによ
り、ＳｉＯ2 膜中に多数存在する格子欠陥を水素で埋め
ることができる。そのためＳｉＯ2 膜を安定化でき、Ｉ
ＴＯ成膜時に酸素が遊離するのを抑制することができ
る。そのためＳｉＯ2 膜上に結晶粒界が少ないＩＴＯ膜
を形成することができる。結晶粒界が少ないため、基板
加熱を行ってもＩＴＯ膜中に侵入する酸素量が少なく、
加熱による抵抗上昇が小さいＩＴＯ膜とすることができ
る。By introducing hydrogen during deposition of the action] SiO 2 film, the lattice defects present many in the SiO 2 film can be filled with hydrogen. Therefore, the SiO 2 film can be stabilized and I
It is possible to suppress release of oxygen during TO film formation. Therefore, an ITO film with few crystal grain boundaries can be formed on the SiO 2 film. Since there are few crystal grain boundaries, the amount of oxygen entering the ITO film is small even when the substrate is heated,
It is possible to use an ITO film in which resistance increase due to heating is small.
【００１２】[0012]
【実施例】ＩＴＯ膜およびその下地のＳｉＯ2 膜は、図
１に示したような基板搬送式のマグネトロンスパッタ装
置を用いて成膜を行った。基板１０は基板ホルダ９に取
り付けられ、ゲート弁１１を通って排気室１２に移動さ
せる。排気室１２では減圧した後でゲート弁１４を開
き、基板１０をＳｉＯ2 成膜室１５に搬送する。EXAMPLE The ITO film and the underlying SiO 2 film were formed by using the substrate transport type magnetron sputtering apparatus as shown in FIG. The substrate 10 is attached to the substrate holder 9 and moved to the exhaust chamber 12 through the gate valve 11. In the exhaust chamber 12, after the pressure is reduced, the gate valve 14 is opened and the substrate 10 is transferred to the SiO 2 film forming chamber 15.
【００１３】ＳｉＯ2 成膜室１５ではＳｉＯ2 ターゲッ
ト１６がＲＦ電源１７と接続されており、Ｈ2 を混合し
たＡｒのボンベ３０からスパッタガスを供給しながらタ
ーゲット１６にＲＦを給電することにより、ターゲット
１６はスパッタリングされる。さらに、ターゲット１６
をスパッタすると同時に基板１０をゲート弁１４の直後
からゲート弁１９の直前まで搬送させることにより基板
１０上にＳｉＯ2 膜を形成する。ＳｉＯ2 膜を成膜後、
ゲート弁１９を開き、基板１０をＩＴＯ成膜室２２に移
動する。ＩＴＯ成膜室２２ではＯ2 を混合したＡｒのボ
ンベ３１からスパッタガスを供給しながら、ＩＴＯター
ゲット２０に直流電源２１から給電してスパッタリング
を行う。ＩＴＯ膜の場合もＳｉＯ2 膜の場合と同様に基
板１０を搬送しながらＩＴＯターゲット２０をスパッタ
リングして成膜を行う。成膜後にはゲート弁２３を開
き、基板を取り出し室２４に移動させ、取り出し室２４
を大気圧まで圧力を上げて基板１０を大気中に取り出
す。In the SiO 2 film forming chamber 15, a SiO 2 target 16 is connected to an RF power source 17, and RF is supplied to the target 16 while supplying sputtering gas from an Ar cylinder 30 mixed with H 2 . The target 16 is sputtered. Furthermore, the target 16
Simultaneously with sputtering, the substrate 10 is conveyed from immediately after the gate valve 14 to immediately before the gate valve 19 to form a SiO 2 film on the substrate 10. After forming the SiO 2 film,
The gate valve 19 is opened and the substrate 10 is moved to the ITO film forming chamber 22. In the ITO film forming chamber 22, while the sputtering gas is supplied from the Ar cylinder 31 mixed with O 2 , the ITO target 20 is supplied with power from the DC power supply 21 to perform sputtering. In the case of the ITO film, the ITO target 20 is sputtered while carrying the substrate 10 to form a film, as in the case of the SiO 2 film. After the film formation, the gate valve 23 is opened and the substrate is moved to the take-out chamber 24.
Is raised to atmospheric pressure and the substrate 10 is taken out into the atmosphere.
【００１４】基板としてソーダガラスを用い、成膜を行
った。下地のＳｉＯ2 膜の成膜には、スパッタガスとし
て体積比２％の水素を混合したアルゴンガスを用いた。
成膜時の圧力は４×１０-3Torr、スパッタパワーとして
ターゲットに１ｋＷを印加、基板温度を２５０℃として
ＳｉＯ2 膜を膜厚５００Å成膜した。さらにＩＴＯ膜
は、Ｉｎ2Ｏ3中にＳｎＯ2 を重量比で１０％混合して焼
結したターゲットを用いてＳｉＯ2 膜上に成膜した。Ｉ
ＴＯの成膜はスパッタガスとして体積比０.５％の酸素
を混合したアルゴンガスとし、成膜時の圧力は４×１０
-3Torr、スパッタパワーとしてターゲットに５００Ｗを
印加、基板温度を２５０℃としてＩＴＯ膜を膜厚５００
Å成膜した。成膜直後のＩＴＯ膜のシート抵抗は４０Ω
／□、透過率は波長５５０ｎｍにおいて８５％以上が得
られた。A film was formed using soda glass as the substrate. For forming the underlying SiO 2 film, an argon gas mixed with 2% by volume of hydrogen was used as a sputtering gas.
The pressure during film formation was 4 × 10 −3 Torr, 1 kW was applied as a sputtering power to a target, and the substrate temperature was 250 ° C. to form a SiO 2 film having a film thickness of 500 Å. Further, the ITO film was formed on the SiO 2 film by using a target obtained by mixing SnO 2 in In 2 O 3 in a weight ratio of 10% and sintering the mixture. I
The TO film is formed by using argon gas mixed with 0.5% by volume of oxygen as a sputtering gas, and the pressure during film formation is 4 × 10.
-3 Torr, 500 W is applied as a sputtering power to the target, the substrate temperature is 250 ° C., and the ITO film is 500
Å The film was formed. The sheet resistance of the ITO film immediately after film formation is 40Ω.
/ □, the transmittance was 85% or more at a wavelength of 550 nm.
【００１５】[0015]
【発明の効果】本発明によれば、下地をＳｉＯ2 膜とし
て作製したＩＴＯ膜を、３００℃の大気中に３０分放置
し、抵抗値の変化を測定した。ＳｉＯ2 膜の成膜時に、
スパッタガスとして水素とアルゴンとの混合ガスを用い
た場合、ＩＴＯ膜のシート抵抗は加熱前の４０Ω／□か
ら１４０Ω／□へ、すなわち、３.５ 倍上昇した。一
方、従来の方法としてＳｉＯ2 膜の成膜時に、スパッタ
ガスとしてアルゴンのみを使用した場合、ＩＴＯ膜のシ
ート抵抗は加熱前の４０Ω／□から１６０Ω／□まで、
すなわち、４.０ 倍上昇した。従って、抵抗の上昇度を
従来の４.０ 倍から３.５ 倍に抑制することができた。
また、ＳｎＯ2 やＺｎＯなどの酸化物透明導電膜につい
ても同様の効果が得られた。According to the present invention, an ITO film having a SiO 2 film as a base was left in the atmosphere at 300 ° C. for 30 minutes, and the change in resistance value was measured. When forming the SiO 2 film,
When a mixed gas of hydrogen and argon was used as the sputtering gas, the sheet resistance of the ITO film increased from 40 Ω / □ before heating to 140 Ω / □, that is, 3.5 times. On the other hand, in the conventional method, when only the argon was used as the sputtering gas when forming the SiO 2 film, the sheet resistance of the ITO film was from 40 Ω / □ before heating to 160 Ω / □,
That is, it increased by 4.0 times. Therefore, it was possible to suppress the increase in resistance from 4.0 times to 3.5 times that of the conventional method.
Further, the same effect was obtained with an oxide transparent conductive film such as SnO 2 or ZnO.
【図１】本発明を実施したマグネトロンスパッタ装置の
説明図。FIG. 1 is an explanatory diagram of a magnetron sputtering apparatus embodying the present invention.
１３，１８，２５…真空ポンプ、２６…ゲート弁。 13, 18, 25 ... Vacuum pump, 26 ... Gate valve.
フロントページの続き (72)発明者 梅原 諭 茨城県日立市国分町一丁目１番１号 株式 会社日立製作所国分工場内 (72)発明者 亀井 光浩 茨城県日立市国分町一丁目１番１号 株式 会社日立製作所国分工場内 (72)発明者 瀬戸山 英嗣 茨城県日立市国分町一丁目１番１号 株式 会社日立製作所国分工場内Front page continuation (72) Inventor Satoshi Umehara 1-1-1, Kokubuncho, Hitachi City, Ibaraki Hitachi Co., Ltd. Kokubun Plant (72) Inventor Mitsuhiro Kamei 1-1-1 Kokubuncho, Hitachi City, Ibaraki Hitachi, Ltd., Kokubun Plant (72) Inventor, Eiji Setoyama, 1-1, Kokubuncho, Hitachi City, Ibaraki Prefecture Stock, Hitachi Ltd., Kokubun Plant
Claims (2)
させるべき基体上に二酸化けい素膜をスパッタ法あるい
はマグネトロンスパッタ法により成膜し、前記二酸化け
い素膜の成膜後に前記基体の周囲の圧力を１００Ｐａよ
り高い圧力にすることなく、前記二酸化けい素膜上に透
明導電膜をマグネトロンスパッタ法により成膜する成膜
方法において、前記二酸化けい素膜の成膜時に水素分子
か、あるいは少なくとも水素原子を含む分子を前記真空
容器内への導入ガスに混入することを特徴とする二酸化
けい素膜の成膜方法。1. A silicon dioxide film is formed by a sputtering method or a magnetron sputtering method on a substrate to which a film is attached in a container for holding a vacuum, and the substrate is formed after the formation of the silicon dioxide film. In a film forming method of forming a transparent conductive film on the silicon dioxide film by a magnetron sputtering method without setting the pressure around 100 Pa to a pressure higher than 100 Pa, hydrogen molecules are formed during the formation of the silicon dioxide film. Alternatively, a method for forming a silicon dioxide film is characterized in that a molecule containing at least a hydrogen atom is mixed into the gas introduced into the vacuum container.
させるべき基体上に二酸化けい素膜をスパッタ法あるい
はマグネトロンスパッタ法により成膜し、前記二酸化け
い素膜の成膜後に前記基体の周囲の圧力を１００Ｐａよ
り高い圧力にすることなく、前記二酸化けい素膜上に透
明導電膜をマグネトロンスパッタ法により成膜する成膜
方法において、前記二酸化けい素膜の成膜前あるいは成
膜中に水素分子か、あるいは少なくとも水素原子を含む
分子を前記真空容器内への導入ガスに混入することを特
徴とする二酸化けい素膜の成膜方法。2. A silicon dioxide film is formed by a sputtering method or a magnetron sputtering method on a substrate to which a film is attached in a container for holding a vacuum, and the substrate is formed after the formation of the silicon dioxide film. In a film forming method for forming a transparent conductive film on the silicon dioxide film by magnetron sputtering without setting the pressure around the substrate to a pressure higher than 100 Pa, before or during the formation of the silicon dioxide film. 2. A method for forming a silicon dioxide film, characterized in that a hydrogen molecule or a molecule containing at least a hydrogen atom is mixed into a gas introduced into the vacuum container.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5535893A JPH06264223A (en) | 1993-03-16 | 1993-03-16 | Formation of silicon dioxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5535893A JPH06264223A (en) | 1993-03-16 | 1993-03-16 | Formation of silicon dioxide film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06264223A true JPH06264223A (en) | 1994-09-20 |
Family
ID=12996276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5535893A Pending JPH06264223A (en) | 1993-03-16 | 1993-03-16 | Formation of silicon dioxide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06264223A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014064042A (en) * | 2011-08-30 | 2014-04-10 | El-Seed Corp | Production method for glass substrate with uneven structure film using dry etching, glass substrate with uneven structure film, solar cell, and manufacturing method for solar cell |
| CN106435503A (en) * | 2016-11-02 | 2017-02-22 | 清华大学 | Silicon oxide film with large positive temperature coefficient and deposition method thereof |
| CN107299315A (en) * | 2017-07-11 | 2017-10-27 | 大连交通大学 | A kind of high insulaion resistance silica membrane material and preparation method thereof |
-
1993
- 1993-03-16 JP JP5535893A patent/JPH06264223A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014064042A (en) * | 2011-08-30 | 2014-04-10 | El-Seed Corp | Production method for glass substrate with uneven structure film using dry etching, glass substrate with uneven structure film, solar cell, and manufacturing method for solar cell |
| US9117967B2 (en) | 2011-08-30 | 2015-08-25 | El-Seed Corporation | Method of manufacturing glass substrate with concave-convex film using dry etching, glass substrate with concave-convex film, solar cell, and method of manufacturing solar cell |
| CN106435503A (en) * | 2016-11-02 | 2017-02-22 | 清华大学 | Silicon oxide film with large positive temperature coefficient and deposition method thereof |
| CN106435503B (en) * | 2016-11-02 | 2019-02-05 | 清华大学 | A kind of silicon oxide film and its deposition method of big positive temperature coefficient |
| CN107299315A (en) * | 2017-07-11 | 2017-10-27 | 大连交通大学 | A kind of high insulaion resistance silica membrane material and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0636702B1 (en) | Methods for producing functional films | |
| Chang et al. | Studying of transparent conductive ZnO: Al thin films by RF reactive magnetron sputtering | |
| JP2003297150A (en) | Transparent electrically conductive laminate and manufacturing method therefor | |
| Sujatha et al. | Characteristics of indium tin oxide films deposited by bias magnetron sputtering | |
| US4842705A (en) | Method for manufacturing transparent conductive indium-tin oxide layers | |
| US4428810A (en) | Method and apparatus for depositing conducting oxide on a substrate | |
| JPH0931630A (en) | Transparent electrically conductive film and its production | |
| JPH06264223A (en) | Formation of silicon dioxide film | |
| JP4106931B2 (en) | Transparent gas barrier thin film coating film | |
| US6579425B2 (en) | System and method for forming base coat and thin film layers by sequential sputter depositing | |
| JP3265399B2 (en) | Continuous formation method of silicon oxide film and transparent conductive film | |
| JPH05313111A (en) | Production of transparent conductive glass for liquid crystal display element | |
| JP2688999B2 (en) | Method for producing transparent conductive film | |
| US4040927A (en) | Cadmium tellurite thin films | |
| JPH0723532B2 (en) | Method for forming transparent conductive film | |
| JP2003183813A (en) | Apparatus for manufacturing transparent electroconductive film | |
| JP3240008B2 (en) | Method of forming oxide thin film | |
| JPH09118544A (en) | Transparent electrically conductive film, its production and material for production | |
| KR20080006812A (en) | Bi-layer ito film deposition method and bi-layer ito film prepared by the same | |
| JPH0967671A (en) | Production of titanium nitride film | |
| JPH10183333A (en) | Formation of transparent conductive film | |
| JP2505662B2 (en) | Method for manufacturing thin film transistor | |
| JPH05171437A (en) | Formation of transparent electrically conductive film | |
| JP3007758B2 (en) | ITO conductive film and method of manufacturing the same | |
| JPH0853760A (en) | Production of silicon oxide film |