JPH06260433A - Semiconductor manufacturing device - Google Patents
Semiconductor manufacturing deviceInfo
- Publication number
- JPH06260433A JPH06260433A JP6941493A JP6941493A JPH06260433A JP H06260433 A JPH06260433 A JP H06260433A JP 6941493 A JP6941493 A JP 6941493A JP 6941493 A JP6941493 A JP 6941493A JP H06260433 A JPH06260433 A JP H06260433A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- heating
- film forming
- chamber
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、基板表面に薄膜を形成
し、或はエッチング処理等の表面処理をして半導体を製
造する半導体製造装置の特に、処理前の予備加熱を行う
基板加熱装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus for manufacturing a semiconductor by forming a thin film on the surface of a substrate or performing a surface treatment such as an etching treatment, and more particularly, a substrate heating apparatus for preheating before treatment. It is about.
【０００２】[0002]
【従来の技術】半導体製造装置の１つに液晶表示板を製
造するものがある。これはガラス基板に種々の薄膜を成
膜し、或はエッチング等を行いガラス表面に多数の半導
体素子を形成するものである。2. Description of the Related Art One of semiconductor manufacturing apparatuses is one for manufacturing a liquid crystal display panel. In this method, various thin films are formed on a glass substrate, or a large number of semiconductor elements are formed on the glass surface by etching or the like.
【０００３】斯かる、半導体製造装置では一連の処理工
程が自動化されており、処理工程の準備処理として、基
板を処理に適した温度迄予備加熱している。In such a semiconductor manufacturing apparatus, a series of processing steps are automated, and the substrate is preheated to a temperature suitable for the processing as a preparatory processing for the processing steps.
【０００４】図３は、ガラス基板を水平状態で処理する
半導体製造装置を示しており、以下はこの半導体製造装
置に用いられている従来の基板加熱装置について説明す
る。FIG. 3 shows a semiconductor manufacturing apparatus for processing a glass substrate in a horizontal state, and a conventional substrate heating apparatus used in this semiconductor manufacturing apparatus will be described below.
【０００５】先ず、該半導体製造装置について略述す
る。First, the semiconductor manufacturing apparatus will be briefly described.
【０００６】図中、１はロードカセットスタンド、２は
第１大気搬送機、３は基板予備室、４は第１真空搬送
機、５は基板加熱装置、６は第１成膜装置、７は第２真
空搬送機、８は第２成膜装置、９は第３真空搬送機、１
０は第３成膜装置、１１は基板冷却室、１２は第２大気
搬送機、１３はアンロードカセットスタンドを示し、基
板予備室３と第１真空搬送機４、第１真空搬送機４と基
板加熱装置５、第１真空搬送機４と第１成膜装置６、第
１成膜装置６と第２真空搬送機７、第２真空搬送機７と
第２成膜装置８、第２成膜装置８と第３真空搬送機９、
第３真空搬送機９と第３成膜装置１０、第３真空搬送機
９と基板冷却室１１とはそれぞれゲートバルブを介して
結合されている。In the figure, 1 is a load cassette stand, 2 is a first atmospheric carrier, 3 is a substrate preliminary chamber, 4 is a first vacuum carrier, 5 is a substrate heating device, 6 is a first film forming device, and 7 is Second vacuum transfer machine, 8 is a second film forming apparatus, 9 is a third vacuum transfer machine, 1
Reference numeral 0 is a third film forming apparatus, 11 is a substrate cooling chamber, 12 is a second atmospheric carrier, 13 is an unload cassette stand, and the substrate preliminary chamber 3, the first vacuum carrier 4, and the first vacuum carrier 4 are provided. Substrate heating device 5, first vacuum transfer device 4 and first film forming device 6, first film forming device 6 and second vacuum transfer device 7, second vacuum transfer device 7 and second film forming device 8, second formation device The membrane device 8 and the third vacuum transfer machine 9,
The third vacuum carrier 9 and the third film forming apparatus 10, and the third vacuum carrier 9 and the substrate cooling chamber 11 are connected to each other via a gate valve.
【０００７】前記ロードカセットスタンド１には、ガラ
ス基板１４が所要枚数装填されたカセット１５がローデ
ィングされ、該ロードカセットスタンド１は装填された
ガラス基板１４のピッチに従って前記カセット１５を間
欠的に昇降する。A cassette 15 having a required number of glass substrates 14 loaded therein is loaded on the load cassette stand 1, and the load cassette stand 1 moves up and down the cassette 15 intermittently in accordance with the pitch of the loaded glass substrates 14. .
【０００８】又、前記第１大気搬送機２は、前記カセッ
ト１５よりガラス基板１４を１枚ずつ取出し基板予備室
３に搬送する。該基板予備室３は気密構造となってお
り、又基板搬送口にゲートバルブ１６を有し、前記ガラ
ス基板１４が搬入された後は、前記ゲートバルブ１６を
閉じて内部を真空状態にする。The first atmospheric carrier 2 takes out the glass substrates 14 one by one from the cassette 15 and carries them to the substrate preliminary chamber 3. The substrate preparatory chamber 3 has an airtight structure, and has a gate valve 16 at the substrate transfer port. After the glass substrate 14 is loaded, the gate valve 16 is closed to bring the inside into a vacuum state.
【０００９】以下、第１真空搬送機４、基板加熱装置
５、第１成膜装置６、第２真空搬送機７、第２成膜装置
８、第３真空搬送機９、第３成膜装置１０、基板冷却室
１１を真空状態で、前記ガラス基板１４の処理、搬送が
行われる。Hereinafter, the first vacuum transfer device 4, the substrate heating device 5, the first film forming device 6, the second vacuum transfer device 7, the second film forming device 8, the third vacuum transfer device 9, and the third film forming device. 10. The glass substrate 14 is processed and transported in a vacuum state in the substrate cooling chamber 11.
【００１０】前記基板予備室３に搬送されたガラス基板
１４は、前記第１真空搬送機４によって前記基板加熱装
置５に搬送され、該基板加熱装置５に於いて該ガラス基
板１４は処理に適した温度まで加熱される。The glass substrate 14 transferred to the substrate preliminary chamber 3 is transferred to the substrate heating device 5 by the first vacuum transfer device 4, and the glass substrate 14 is suitable for processing in the substrate heating device 5. Is heated to the desired temperature.
【００１１】予備加熱された前記ガラス基板１４は前記
第１真空搬送機４によって前記第１成膜装置６に搬送さ
れ、該第１成膜装置６に於いて第１層の成膜処理が行わ
れる。第１層の成膜処理が完了すると前記第２真空搬送
機７より前記第１成膜装置６から取出されたガラス基板
１４は前記第２成膜装置８に搬送され、該第２成膜装置
８に於いて第２の成膜処理が行われる。同様に、前記第
３真空搬送機９により前記第３成膜装置１０にガラス基
板１４が搬送され、更に成膜処理が行われ、所要の成膜
処理が完了すると、前記第３真空搬送機９によって前記
基板冷却室１１にガラス基板１４が搬送される。The preheated glass substrate 14 is transferred to the first film forming apparatus 6 by the first vacuum transfer machine 4, and the first film forming apparatus 6 performs the film forming process of the first layer. Be seen. When the film forming process of the first layer is completed, the glass substrate 14 taken out from the first film forming apparatus 6 by the second vacuum transfer machine 7 is transferred to the second film forming apparatus 8 and the second film forming apparatus 8 is formed. In 8, the second film forming process is performed. Similarly, when the glass substrate 14 is transferred to the third film forming apparatus 10 by the third vacuum transfer machine 9 and the film forming process is further performed, and the required film forming process is completed, the third vacuum transfer machine 9 is performed. Thus, the glass substrate 14 is transferred to the substrate cooling chamber 11.
【００１２】該基板冷却室１１内部を常圧迄昇圧し、ゲ
ートバルブ１７を開いて前記第２大気搬送機１２によっ
てガラス基板１４を取出し、前記アンロードカセットス
タンド１３に載置されたカセット１５に処理の完了した
ガラス基板１４を１枚ずつ移載する。The inside of the substrate cooling chamber 11 is raised to normal pressure, the gate valve 17 is opened, the glass substrate 14 is taken out by the second atmospheric carrier 12, and the cassette 15 is placed on the unload cassette stand 13. The processed glass substrates 14 are transferred one by one.
【００１３】次に、従来の基板加熱装置５を図４により
説明する。Next, the conventional substrate heating device 5 will be described with reference to FIG.
【００１４】フレーム２０に気密な基板加熱室２１を設
け、該基板加熱室２１の蓋２２は開閉可能となってお
り、又基板加熱室２１の側面には連絡窓５１が穿設さ
れ、該連絡窓５１より第１真空搬送機４のロボットアー
ム３０が出入りする様になっている。An airtight substrate heating chamber 21 is provided in the frame 20, a lid 22 of the substrate heating chamber 21 can be opened and closed, and a communication window 51 is formed in a side surface of the substrate heating chamber 21 to connect the substrate heating chamber 21. The robot arm 30 of the first vacuum transfer machine 4 comes in and out through the window 51.
【００１５】前記蓋２２に加熱機構２３が設けられ、前
記基板加熱室２１の底部にはポスト２４を介して冷却機
構２５が設けられている。又、該冷却機構２５の周囲に
基板台ユニット２６が設けられ、更に前記冷却機構２
５、基板台ユニット２６を貫通してガラス基板１４を支
持する基板授受機構２８が設けられている。又、前記冷
却機構２５は内部に図示しない冷却管が埋設され、連続
的に冷却されている。A heating mechanism 23 is provided on the lid 22, and a cooling mechanism 25 is provided at the bottom of the substrate heating chamber 21 via a post 24. A substrate base unit 26 is provided around the cooling mechanism 25, and the cooling mechanism 2
5. A substrate transfer mechanism 28 that penetrates the substrate base unit 26 and supports the glass substrate 14 is provided. The cooling mechanism 25 has a cooling pipe (not shown) embedded therein for continuous cooling.
【００１６】前記加熱機構２３を説明する。前記蓋２２
にカラー２９を介して反射板３３が設けられ、該反射板
３３は裏面側に固着された該冷却管３１を介して冷却さ
れる。又、該反射板３３の反射面側には棒状の加熱ラン
プ３２が所要数設けられている。The heating mechanism 23 will be described. The lid 22
A reflecting plate 33 is provided via the collar 29, and the reflecting plate 33 is cooled via the cooling pipe 31 fixed to the back surface side. A required number of rod-shaped heating lamps 32 are provided on the reflecting surface side of the reflecting plate 33.
【００１７】前記基板台ユニット２６を説明する。前記
基板加熱室２１の底部にシールブロック３４が設けら
れ、該シールブロック３４を介して昇降ロッド３５を気
密に且摺動自在に設ける。又、前記基板加熱室２１の底
部裏面側に支柱３６を介して棚板３７が設けられ、該棚
板３７の下面に昇降シリンダ３８が設けられ、該昇降シ
リンダ３８のロッド３９と前記昇降ロッド３５の下端に
掛渡して設けたビーム４０とが連結されている。The substrate base unit 26 will be described. A seal block 34 is provided at the bottom of the substrate heating chamber 21, and an elevating rod 35 is provided in an airtight and slidable manner via the seal block 34. Further, a shelf plate 37 is provided on the bottom rear surface side of the substrate heating chamber 21 via a support column 36, and an elevating cylinder 38 is provided on the lower surface of the shelf plate 37, and a rod 39 of the elevating cylinder 38 and the elevating rod 35. Is connected to a beam 40 provided at the lower end of the.
【００１８】又、前記昇降ロッド３５の上端にジョイン
ト金具４１を介してシャフト４２が設けられ、該シャフ
ト４２に台脚４３が摺動自在に設けられ、該台脚４３と
前記ジョイント金具４１とはスプリング４４によって離
反方向に付勢されている。更に、前記台脚４３の上端に
はサセプタ４５が固着される。該サセプタ４５の上面に
は黒体が塗布され、前記加熱ユニツト２３の加熱ランプ
３２からの輻射熱が吸収される。A shaft 42 is provided on the upper end of the elevating rod 35 via a joint metal fitting 41, and a base leg 43 is slidably provided on the shaft 42. The base leg 43 and the joint metal fitting 41 are separated from each other. It is urged in the separating direction by the spring 44. Further, a susceptor 45 is fixed to the upper end of the base leg 43. A black body is applied to the upper surface of the susceptor 45 to absorb the radiant heat from the heating lamp 32 of the heating unit 23.
【００１９】前記棚板３７にはリフトシリンダ５０が設
けられ、該リフトシリンダ５０のロッド４６はシールブ
ロック４７を介して気密に且摺動自在に前記基板加熱室
２１の底部を貫通している。該ロッド４６の上端に複数
のアーム部を有するリフトアーム４８が固着され、該リ
フトアーム４８の各アーム部先端に基板支持ピン４９が
植設されている。該基板支持ピン４９は前記冷却機構２
５、前記サセプタ４５を貫通し、且前記ロボットアーム
３０と干渉しない位置で前記ガラス基板１４の下面に当
接して該ガラス基板１４を支持する様になっている。A lift cylinder 50 is provided on the shelf plate 37, and a rod 46 of the lift cylinder 50 penetrates the bottom of the substrate heating chamber 21 in a gastight and slidable manner via a seal block 47. A lift arm 48 having a plurality of arm portions is fixed to the upper end of the rod 46, and a substrate support pin 49 is planted at the tip of each arm portion of the lift arm 48. The substrate support pin 49 is the cooling mechanism 2
5. The glass substrate 14 is supported by penetrating the susceptor 45 and contacting the lower surface of the glass substrate 14 at a position where it does not interfere with the robot arm 30.
【００２０】尚、特に図示していないが、前記連絡窓５
１にはゲートバルブが設けられ、ガラス基板１４の加熱
時には密閉される様になっている。尚、図中、５９は石
英製のランプカバーを示す。Although not particularly shown, the communication window 5
1 is provided with a gate valve, which is hermetically sealed when the glass substrate 14 is heated. In the figure, 59 indicates a quartz lamp cover.
【００２１】上記基板加熱装置５には真空状態で前記基
板予備室３からガラス基板１４が第１真空搬送機４によ
って搬入される。The glass substrate 14 is loaded into the substrate heating device 5 from the substrate preliminary chamber 3 by the first vacuum transfer machine 4 in a vacuum state.
【００２２】次に、図５により基板予備室３を説明す
る。Next, the substrate preparatory chamber 3 will be described with reference to FIG.
【００２３】気密室５２には前記ゲートバルブ１６が設
けられ、又前記第１真空搬送機４とは図示しないゲート
バルブを介して気密に連設されている。前記気密室５２
には前記基板加熱装置５で設けられた基板授受機構２８
と同一構成の基板授受ユニット５３が設けられている。The airtight chamber 52 is provided with the gate valve 16 and is airtightly connected to the first vacuum carrier 4 via a gate valve (not shown). The airtight chamber 52
The substrate transfer mechanism 28 provided in the substrate heating device 5 is
A substrate transfer unit 53 having the same configuration as that of is provided.
【００２４】前記気密室５２の天井には不活性ガス導入
盤５４が設けられ、該不活性ガス導入盤５４に設けられ
たガス導入孔５５より不活性ガスを前記気密室５２内に
導入する様になっている。又、前記気密室５２の底板に
は、図示しない真空ポンプに接続された排気管５６が設
けられ、前記基板授受ユニット５３を囲繞する様に設け
た排気ダクト５７に連通している。An inert gas introduction plate 54 is provided on the ceiling of the airtight chamber 52, and an inert gas is introduced into the airtight chamber 52 through a gas introduction hole 55 provided in the inert gas introduction plate 54. It has become. An exhaust pipe 56 connected to a vacuum pump (not shown) is provided on the bottom plate of the airtight chamber 52 and communicates with an exhaust duct 57 that surrounds the substrate transfer unit 53.
【００２５】前記カセット１５に保持されたガラス基板
１４を前記基板加熱装置５で予備加熱するには、先ず前
記第１大気搬送機２の移送ハンド５８により１枚の前記
ガラス基板１４を前記カセット１５より取出す。前記第
１真空搬送機４と基板予備室３との間のゲートバルブ
（図示せず）を閉塞し、前記ゲートバルブ１６を開放す
る。前記第１大気搬送機２を駆動して、ガラス基板１４
を保持した前記移送ハンド５８を前記気密室５２内に挿
入する。In order to preheat the glass substrate 14 held in the cassette 15 by the substrate heating device 5, one glass substrate 14 is first transferred to the cassette 15 by the transfer hand 58 of the first atmospheric carrier 2. Take out more. A gate valve (not shown) between the first vacuum transfer machine 4 and the substrate preliminary chamber 3 is closed, and the gate valve 16 is opened. The glass substrate 14 is driven by driving the first atmospheric carrier 2.
The transfer hand 58 holding the above is inserted into the airtight chamber 52.
【００２６】前記移送ハンド５８の挿入時は、前記基板
授受ユニット５３のリフトアーム４８は下降状態であ
り、ガラス基板１４が気密室５２内に挿入されると前記
リフトシリンダ５０が駆動して前記リフトアーム４８を
上昇させ、前記基板支持ピン４９により、ガラス基板１
４を受取る。When the transfer hand 58 is inserted, the lift arm 48 of the substrate transfer unit 53 is in a lowered state, and when the glass substrate 14 is inserted into the airtight chamber 52, the lift cylinder 50 is driven to drive the lift. The arm 48 is raised and the glass substrate 1 is moved by the substrate support pin 49.
Receive 4.
【００２７】前記ゲートバルブ１６を閉塞して、前記気
密室５２を密閉し、前記排気管５６を介して真空引きす
る。The gate valve 16 is closed to seal the airtight chamber 52, and a vacuum is drawn through the exhaust pipe 56.
【００２８】気密室５２が真空引きされると、前記基板
予備室３と前記第１真空搬送機４間のゲートバルブ（図
示せず）、前記第１真空搬送機４と前記基板加熱装置５
間のゲートバルブ（図示せず）が開放され、第１真空搬
送機４のロボットアーム３０が前記基板予備室３内のガ
ラス基板１４を保持し、前記基板加熱装置５内にガラス
基板１４を搬入する。When the airtight chamber 52 is evacuated, a gate valve (not shown) between the substrate preliminary chamber 3 and the first vacuum transfer device 4, the first vacuum transfer device 4 and the substrate heating device 5 are provided.
A gate valve (not shown) between them is opened, the robot arm 30 of the first vacuum transfer machine 4 holds the glass substrate 14 in the substrate preliminary chamber 3, and the glass substrate 14 is carried into the substrate heating device 5. To do.
【００２９】ロボットアーム３０による前記基板加熱装
置５へのガラス基板１４の搬入時には、常温状態迄冷却
した前記サセプタ４５を前記冷却機構２５より上方に位
置させておき、又前記リフトシリンダ５０により前記ロ
ッド４６、リフトアーム４８を介して前記基板支持ピン
４９を下降させ、この状態で前記連絡窓５１からガラス
基板１４を前記基板加熱室２１内に搬入する。When the glass substrate 14 is carried into the substrate heating device 5 by the robot arm 30, the susceptor 45 cooled to the room temperature is placed above the cooling mechanism 25, and the rod is lifted by the lift cylinder 50. 46, the substrate support pin 49 is lowered via the lift arm 48, and in this state, the glass substrate 14 is carried into the substrate heating chamber 21 through the communication window 51.
【００３０】前記ロボットアーム３０によりガラス基板
１４を該サセプタ４５の上方に保持させ、前記リフトシ
リンダ５０を作動させ前記基板支持ピン４９を上昇させ
てガラス基板１４を支持すると共に前記ロボットアーム
３０より離反させる。ロボットアーム３０を後退させ図
示しないゲートバルブで連絡窓５１を閉塞する。The robot arm 30 holds the glass substrate 14 above the susceptor 45, and the lift cylinder 50 is operated to raise the substrate support pin 49 to support the glass substrate 14 and separate it from the robot arm 30. Let The robot arm 30 is retracted and the communication window 51 is closed by a gate valve (not shown).
【００３１】前記リフトシリンダ５０を駆動し、前記基
板支持ピン４９を降下させてガラス基板１４を前記サセ
プタ４５上に載置する。前記した様に、該サセプタ４５
は常温であるので、前記ガラス基板１４が該サセプタ４
５と接触した場合の歪み、割れが防止される。The lift cylinder 50 is driven to lower the substrate support pin 49 to place the glass substrate 14 on the susceptor 45. As described above, the susceptor 45
Is at room temperature, the glass substrate 14 is attached to the susceptor 4.
Strain and cracks when contacted with 5 are prevented.
【００３２】該ガラス基板１４の上面から前記加熱ラン
プ３２により、該ガラス基板１４を加熱する。該加熱ラ
ンプ３２からの輻射熱の１部は該ガラス基板１４を上面
から加熱し、前記輻射熱の残りの部分は前記ガラス基板
１４を透過して前記サセプタ４５に吸収され、該サセプ
タ４５を加熱する。該サセプタ４５が加熱されることで
該サセプタ４５に載置されたガラス基板１４が下面から
加熱される。The glass substrate 14 is heated from above the glass substrate 14 by the heating lamp 32. A part of the radiant heat from the heating lamp 32 heats the glass substrate 14 from the upper surface, and the remaining part of the radiant heat passes through the glass substrate 14 and is absorbed by the susceptor 45 to heat the susceptor 45. By heating the susceptor 45, the glass substrate 14 placed on the susceptor 45 is heated from the lower surface.
【００３３】該ガラス基板１４を所要の温度迄加熱する
と、前記リフトシリンダ５０により前記基板支持ピン４
９を上昇させ前記ガラス基板１４を前記サセプタ４５か
ら持ち上げる。次に、図示しないゲートバルブを開き前
記ロボットアーム３０を前記連絡窓５１から挿入する。
前記リフトシリンダ５０を作動させ前記ガラス基板１４
を降下させ、該ガラス基板１４を前記ロボットアーム３
０に乗置する。該ロボットアーム３０を後退させ予備加
熱の完了したガラス基板１４を基板加熱室２１から取出
す。When the glass substrate 14 is heated to a required temperature, the lift cylinder 50 causes the substrate support pins 4 to move.
9 is lifted to lift the glass substrate 14 from the susceptor 45. Next, a gate valve (not shown) is opened and the robot arm 30 is inserted through the communication window 51.
The lift cylinder 50 is operated to operate the glass substrate 14.
To lower the glass substrate 14 to the robot arm 3
Place at 0. The robot arm 30 is retracted to take out the glass substrate 14 that has been preheated from the substrate heating chamber 21.
【００３４】前記サセプタ４５は前記した様に加熱ラン
プ３２の輻射熱によって加熱されており、次のガラス基
板１４が搬入される迄に冷却されなければならない。こ
の為、前記昇降シリンダ３８を駆動してロッド３９、ビ
ーム４０、昇降ロッド３５、ジョイント金具４１、スプ
リング４４、台脚４３を介して前記サセプタ４５を下降
させ、更に前記冷却機構２５に密着させる。前記スプリ
ング４４により前記サセプタ４５と冷却機構２５とは適
宜な接触圧が得られる。The susceptor 45 is heated by the radiant heat of the heating lamp 32 as described above, and must be cooled before the next glass substrate 14 is loaded. Therefore, the elevating cylinder 38 is driven to lower the susceptor 45 via the rod 39, the beam 40, the elevating rod 35, the joint fitting 41, the spring 44, and the base leg 43, and further makes the susceptor 45 closely contact with the cooling mechanism 25. The spring 44 provides an appropriate contact pressure between the susceptor 45 and the cooling mechanism 25.
【００３５】而して、前記冷却機構２５により前記サセ
プタ４５が冷却され、又前記ガス導入孔５５より不活性
ガスが気密室５２内に導入され、常圧に戻されて次のガ
ラス基板１４の受入れ、加熱が可能になる。Then, the susceptor 45 is cooled by the cooling mechanism 25, and the inert gas is introduced into the airtight chamber 52 through the gas introduction hole 55 and is returned to the normal pressure so that the next glass substrate 14 is cooled. Acceptance and heating are possible.
【００３６】[0036]
【発明が解決しようとする課題】前記した従来の基板加
熱装置では、ガラス基板１４を一旦基板予備室３に保持
させ基板予備室３を真空状態にしてから搬入する構成で
ある。従って、図３に示した半導体製造装置では、１３
ユニットの構成となり、構成ユニット数が多くなる。而
も前記基板予備室３、第１真空搬送機４、基板加熱装置
５はそれぞれ可動部分を有し、構成が複雑であると共に
高価な真空室を要している。この為、製作コストが掛か
ると共に半導体製造装置の設置床面積も多く必要とな
る。更に、構成ユニット数が多くなるとユニット間での
ガラス基板１４の搬送動作も必然的に多くなり、信頼性
の低下を招いていた。In the conventional substrate heating apparatus described above, the glass substrate 14 is temporarily held in the substrate preliminary chamber 3 and the substrate preliminary chamber 3 is brought into a vacuum state before being loaded. Therefore, in the semiconductor manufacturing apparatus shown in FIG.
It becomes a unit configuration, and the number of configuration units increases. Further, the substrate preparatory chamber 3, the first vacuum transfer machine 4, and the substrate heating device 5 each have a movable portion, which requires a complicated structure and an expensive vacuum chamber. Therefore, the manufacturing cost is high and the installation floor area of the semiconductor manufacturing apparatus is required to be large. Further, as the number of constituent units increases, the number of operations of transporting the glass substrate 14 between the units inevitably increases, leading to a decrease in reliability.
【００３７】本発明は斯かる実情に鑑み、半導体製造装
置の構成ユニット数を減らし、コストの低減、信頼性の
向上を図ろうとするものである。In view of the above situation, the present invention aims to reduce the number of constituent units of the semiconductor manufacturing apparatus to reduce the cost and improve the reliability.
【００３８】[0038]
【課題を解決するための手段】本発明は、大気搬送機
と、気密室を具備する基板加熱装置と、気密室を具備す
る所要数の成膜装置とを有し、基板加熱装置と成膜装置
とを真空搬送機を介して連設した半導体製造装置に於い
て、前記大気搬送機を前記基板加熱装置に連設し、該基
板加熱装置に真空排気系を接続すると共に不活性ガス供
給系を接続し、又該基板加熱装置に基板授受機構と基板
予備加熱機構を設けたことを特徴とするものである。The present invention has an atmospheric carrier, a substrate heating apparatus having an airtight chamber, and a required number of film forming apparatuses having an airtight chamber, and the substrate heating apparatus and the film forming apparatus. In a semiconductor manufacturing apparatus in which the apparatus is connected via a vacuum carrier, the atmosphere carrier is connected to the substrate heating apparatus, and a vacuum exhaust system is connected to the substrate heating apparatus and an inert gas supply system is connected. And the substrate heating device is provided with a substrate transfer mechanism and a substrate preheating mechanism.
【００３９】[0039]
【作用】大気搬送機により基板が基板加熱装置に搬入さ
れ、基板加熱装置で気密室を真空排気すると共に基板を
予備加熱し、真空排気と予備加熱が完了した時点で真空
搬送機により基板を基板加熱室から成膜装置へ搬送し、
成膜室で所要の成膜を行う。The substrate is carried into the substrate heating device by the atmospheric carrier, the airtight chamber is evacuated by the substrate heating device, and the substrate is preheated. Transported from the heating chamber to the film forming equipment,
Required film formation is performed in the film formation chamber.
【００４０】[0040]
【実施例】以下、図面を参照しつつ本発明の一実施例を
説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
【００４１】図１は本発明に係る基板加熱装置６０を示
している。又、図１中、図４、図５中で示したものと同
一の機能を有するものは同符号を付してある。FIG. 1 shows a substrate heating device 60 according to the present invention. Further, in FIG. 1, those having the same functions as those shown in FIGS. 4 and 5 are designated by the same reference numerals.
【００４２】真空容器本体６１と冷却蓋６２とで気密な
基板加熱室６３を形成する。前記真空容器本体６１の底
部には基板授受機構２８を収納するダクトブロック６４
が設けられ、該ダクトブロック６４の上面には冷却管６
５が埋設された冷却機構２５が取付けられる。又、前記
真空容器本体６１の下面には基板授受機構２８が設けら
れる。The vacuum container body 61 and the cooling lid 62 form an airtight substrate heating chamber 63. A duct block 64 for accommodating the substrate transfer mechanism 28 is provided at the bottom of the vacuum container body 61.
And a cooling pipe 6 is provided on the upper surface of the duct block 64.
A cooling mechanism 25 in which 5 is embedded is attached. A substrate transfer mechanism 28 is provided on the lower surface of the vacuum container body 61.
【００４３】前記真空容器本体６１の底部をシールブロ
ック４７を介して前記基板授受機構２８のロッド４６が
気密に貫通し、前記ダクトブロック６４の中央部に形成
された凹部にはリフトアーム４８が昇降自在に収納され
る。該リフトアーム４８はリフトシリンダ５０の前記ロ
ッド４６の上端に固着される。前記真空容器本体６１の
底部をシールブロック３４を介して昇降ロッド３５が貫
通し、又該昇降ロッド３５は前記ダクトブロック６４、
前記冷却機構２５を遊貫する。前記昇降ロッド３５の上
端にサセプタ４５が固着される。該サセプタ４５の上面
には黒体が塗布され、前記加熱機構２３の加熱ランプ３
２からの輻射熱を効果的に吸収する。The rod 46 of the substrate transfer mechanism 28 hermetically penetrates the bottom of the vacuum container body 61 via the seal block 47, and the lift arm 48 moves up and down in the recess formed in the center of the duct block 64. Can be stored freely. The lift arm 48 is fixed to the upper end of the rod 46 of the lift cylinder 50. An elevating rod 35 penetrates the bottom portion of the vacuum container body 61 via a seal block 34, and the elevating rod 35 includes the duct block 64,
The cooling mechanism 25 is loosely inserted. A susceptor 45 is fixed to the upper end of the lifting rod 35. A black body is applied to the upper surface of the susceptor 45, and the heating lamp 3 of the heating mechanism 23 is applied.
2. Radiant heat from 2 is effectively absorbed.
【００４４】前記リフトアーム４８の先端には基板支持
ピン４９が立設され、該基板支持ピン４９は前記冷却機
構２５、前記サセプタ４５を遊貫して上方に突出し、前
記リフトシリンダ５０によって昇降する。A substrate support pin 49 is erected at the tip of the lift arm 48. The substrate support pin 49 freely penetrates the cooling mechanism 25 and the susceptor 45 and projects upward, and is lifted and lowered by the lift cylinder 50. .
【００４５】前記冷却蓋６２にはガス導入孔５５が設け
られ、該ガス導入孔５５より不活性ガスが導入される様
になっており、前記冷却蓋６２には冷却管３１が埋設さ
れている。又、該冷却蓋６２の下面には棒状の加熱ラン
プ３２が設けられ、該加熱ランプ３２の下方には石英製
のランプカバー５９が設けられている。前記ダクトブロ
ック６４の周囲には排気ダクト５７が形成され、該排気
ダクト５７は排気管５６に連通している。A gas introduction hole 55 is provided in the cooling lid 62 so that an inert gas can be introduced from the gas introduction hole 55, and a cooling pipe 31 is embedded in the cooling lid 62. . A rod-shaped heating lamp 32 is provided on the lower surface of the cooling lid 62, and a quartz lamp cover 59 is provided below the heating lamp 32. An exhaust duct 57 is formed around the duct block 64, and the exhaust duct 57 communicates with the exhaust pipe 56.
【００４６】上記構成の基板加熱装置６０を具備した半
導体製造装置を図２に示す。又、図２に於いて図１中で
示した同一のユッニットには同符号を付してある。図２
と図１の対比で分かる様に本実施例では、基板予備室３
と第１真空搬送機４が省略されている。FIG. 2 shows a semiconductor manufacturing apparatus equipped with the substrate heating apparatus 60 having the above structure. Further, in FIG. 2, the same units shown in FIG. 1 are designated by the same reference numerals. Figure 2
As can be seen from the comparison between FIG. 1 and FIG.
The first vacuum transfer machine 4 is omitted.
【００４７】以下、前記基板加熱装置６０の作動につい
て説明する。The operation of the substrate heating device 60 will be described below.
【００４８】冷却機構２５によりサセプタ４５が冷却さ
れた後、昇降シリンダ３８、昇降ロッド３５を介してサ
セプタ４５が前記冷却機構２５より持ち上げられた状態
で、前記第１大気搬送機２により前記カセット１５のガ
ラス基板１４が搬入される。前記リフトシリンダ５０の
駆動でリフトアーム４８が上昇し、前記ガラス基板１４
は前記移送ハンド５８から前記基板支持ピン４９へ移載
される。前記移送ハンド５８が後退した後、ゲートバル
ブ１６が閉塞され、前記基板加熱室６３が気密となる。After the susceptor 45 is cooled by the cooling mechanism 25, the susceptor 45 is lifted by the cooling mechanism 25 via the lifting cylinder 38 and the lifting rod 35, and the cassette 15 is moved by the first atmospheric carrier 2. The glass substrate 14 is loaded. When the lift cylinder 50 is driven, the lift arm 48 rises, and the glass substrate 14
Is transferred from the transfer hand 58 to the substrate support pin 49. After the transfer hand 58 retracts, the gate valve 16 is closed and the substrate heating chamber 63 becomes airtight.
【００４９】前記加熱ランプ３２により前記ガラス基板
１４を加熱する。前記加熱ランプ３２からの熱は一部が
直接前記ガラス基板１４に吸収され、残部の大部分は該
ガラス基板１４を透過して前記サセプタ４５に吸収され
る。熱の吸収で該サセプタ４５が昇温し、前記ガラス基
板１４は加熱ランプ３２とサセプタ４５により両面から
加熱され、而も前記サセプタ４５は常温からの加熱とな
るのでガラス基板１４の急激な加熱が防止される。The glass substrate 14 is heated by the heating lamp 32. Part of the heat from the heating lamp 32 is directly absorbed by the glass substrate 14, and most of the rest is transmitted through the glass substrate 14 and absorbed by the susceptor 45. Due to the absorption of heat, the temperature of the susceptor 45 rises, the glass substrate 14 is heated from both sides by the heating lamp 32 and the susceptor 45, and since the susceptor 45 is heated from room temperature, the glass substrate 14 is not rapidly heated. To be prevented.
【００５０】前記ガラス基板１４の加熱と併行して、前
記排気管５６を介して基板加熱室６３が真空引きされ
る。所定温度迄の加熱と所定圧力迄の真空排気が完了す
ると、前記リフトシリンダ５０が駆動してリフトアーム
４８、基板支持ピン４９を介してガラス基板１４を上昇
させる。Simultaneously with the heating of the glass substrate 14, the substrate heating chamber 63 is evacuated through the exhaust pipe 56. When heating up to a predetermined temperature and evacuation to a predetermined pressure are completed, the lift cylinder 50 is driven to raise the glass substrate 14 via the lift arm 48 and the substrate support pin 49.
【００５１】第２真空搬送機７と基板加熱装置６０間の
ゲートバルブ（図示せず）が開放され、前記第２真空搬
送機７よってガラス基板１４が受取られ搬出されると、
前記リフトシリンダ５０によって前記基板支持ピン４９
が降下すると共に、前記昇降シリンダ３８によって前記
サセプタ４５が降下し、前記冷却機構２５に密着され
る。When the gate valve (not shown) between the second vacuum carrier 7 and the substrate heating device 60 is opened, and the glass substrate 14 is received and carried out by the second vacuum carrier 7,
The substrate support pin 49 is provided by the lift cylinder 50.
And the susceptor 45 is lowered by the elevating cylinder 38 and is brought into close contact with the cooling mechanism 25.
【００５２】前記第１成膜装置６と前記基板加熱装置６
０間のゲートバルブ（図示せず）が閉塞され、前記サセ
プタ４５が前記冷却機構２５により冷却されると併行し
て前記ガス導入孔５５から不活性ガスが導入され、大気
復帰が行われる。The first film forming apparatus 6 and the substrate heating apparatus 6
When the gate valve (not shown) between 0 is closed and the susceptor 45 is cooled by the cooling mechanism 25, an inert gas is introduced from the gas introduction hole 55 at the same time, and the atmosphere is returned.
【００５３】上記作動で明らかな様に、基板加熱装置６
０内での加熱冷却と減圧昇圧がそれぞれ併行して行わ
れ、ガラス基板１４の準備加熱、ガラス基板１４の搬入
搬出の為の準備が時間の無駄なく行われる。As is clear from the above operation, the substrate heating device 6
Heating and cooling in 0 and decompression / pressurization are performed in parallel, so that the preparation and heating of the glass substrate 14 and the preparation for loading and unloading the glass substrate 14 are performed without waste of time.
【００５４】尚、図２で示した半導体製造装置は構成の
一例を示すものであり、例えば成膜装置が２組、或は４
組以上等種々の組合わせが考えられることは言う迄もな
い。The semiconductor manufacturing apparatus shown in FIG. 2 shows an example of the structure. For example, two sets of film forming apparatuses or four film forming apparatuses are provided.
It goes without saying that various combinations such as more than one set are possible.
【００５５】又、加熱源として加熱ランプ３２を使用し
たが加熱ランプ３２に代え電熱線等を使用してもよいこ
とは勿論である。Although the heating lamp 32 is used as the heating source, it goes without saying that a heating wire or the like may be used instead of the heating lamp 32.
【００５６】[0056]
【発明の効果】以上述べた如く本発明によれば、従来の
基板予備室と基板加熱装置とを同一のユニットで行える
様にしたので、基板予備室及び基板予備室と基板加熱装
置間の基板移載の為の第１真空搬送機を省略でき、真空
室を必要とするユニットの減少を図れ、コストの低減が
可能となると共に半導体製造装置の設置床面積の減少を
図ることができ、更にユニット数の減少に伴い基板の搬
送工程が減少するので信頼性が向上するという優れた効
果を発揮する。As described above, according to the present invention, the conventional substrate preparatory chamber and the substrate heating device can be operated in the same unit. Therefore, the substrate preparatory chamber and the substrate between the substrate preparatory chamber and the substrate heating device are provided. The first vacuum transfer machine for transfer can be omitted, the number of units requiring a vacuum chamber can be reduced, the cost can be reduced, and the installation floor area of the semiconductor manufacturing apparatus can be reduced. As the number of units is reduced, the number of steps for transferring the substrate is reduced, so that an excellent effect of improving reliability is exhibited.
【図１】本発明の一実施例に係る加熱装置の断面図であ
る。FIG. 1 is a cross-sectional view of a heating device according to an embodiment of the present invention.
【図２】該基板加熱装置を具備した半導体製造装置の斜
視図である。FIG. 2 is a perspective view of a semiconductor manufacturing apparatus equipped with the substrate heating apparatus.
【図３】従来の基板加熱装置を具備した半導体製造装置
の斜視図である。FIG. 3 is a perspective view of a semiconductor manufacturing apparatus equipped with a conventional substrate heating apparatus.
【図４】従来の基板加熱装置を示す断面図である。FIG. 4 is a cross-sectional view showing a conventional substrate heating device.
【図５】従来の基板予備室を示す断面図である。FIG. 5 is a cross-sectional view showing a conventional substrate preliminary chamber.
１ ロードカセットスタンド ２ 第１大気搬送機 ６ 第１成膜装置 ７ 第２真空搬送機 ８ 第２成膜装置 ９ 第３真空搬送機 １０ 第３成膜装置 １１ 基板冷却室 １２ 第２大気搬送機 １３ アンロードカセットスタンド ２５ 冷却機構 ２８ 基板授受機構 ３２ 加熱ランプ ４５ サセプタ ４９ 基板支持ピン ５５ ガス導入孔 ５６ 排気管 ６０ 基板加熱装置 DESCRIPTION OF SYMBOLS 1 Load cassette stand 2 1st atmospheric transfer machine 6 1st film-forming apparatus 7 2nd vacuum transfer machine 8 2nd film-forming apparatus 9 3rd vacuum transfer machine 10 3rd film-forming apparatus 11 Substrate cooling chamber 12 2nd atmospheric transfer machine 13 unload cassette stand 25 cooling mechanism 28 substrate transfer mechanism 32 heating lamp 45 susceptor 49 substrate support pin 55 gas introduction hole 56 exhaust pipe 60 substrate heating device
Claims (2)
熱装置と、気密室を具備する所要数の成膜装置とを有
し、基板加熱装置と成膜装置とを真空搬送機を介して連
設した半導体製造装置に於いて、前記大気搬送機を前記
基板加熱装置に連設し、該基板加熱装置に真空排気系を
接続すると共に不活性ガス供給系を接続し、又該基板加
熱装置に基板授受機構と基板予備加熱機構を設けたこと
を特徴とする半導体製造装置。1. An atmospheric carrier, a substrate heating device having an airtight chamber, and a required number of film forming devices having the airtight chamber, wherein the substrate heating device and the film forming device are provided via a vacuum carrier. In the semiconductor manufacturing apparatus connected in series, the atmospheric carrier is connected to the substrate heating apparatus, and a vacuum exhaust system is connected to the substrate heating apparatus and an inert gas supply system is connected to the substrate heating apparatus. A semiconductor manufacturing apparatus, wherein the apparatus is provided with a substrate transfer mechanism and a substrate preheating mechanism.
源を設け、該気密室内部の下部に冷却機構を設け、前記
加熱源と前記冷却機構との間を昇降し、該冷却機構に密
着可能なサセプタを設け、該サセプタを遊貫し基板を支
持可能な基板支持ピンを有する基板授受ユニットを設け
た請求項１の半導体製造装置。2. A heating source is provided in an upper part of an airtight chamber of a substrate heating apparatus, a cooling mechanism is provided in a lower part of the airtight chamber, and a cooling mechanism is moved up and down between the heating source and the cooling mechanism. 2. The semiconductor manufacturing apparatus according to claim 1, further comprising a susceptor that can be in close contact with the susceptor, and a substrate transfer unit that has a substrate support pin that penetrates the susceptor and supports the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6941493A JPH06260433A (en) | 1993-03-04 | 1993-03-04 | Semiconductor manufacturing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6941493A JPH06260433A (en) | 1993-03-04 | 1993-03-04 | Semiconductor manufacturing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06260433A true JPH06260433A (en) | 1994-09-16 |
Family
ID=13401931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6941493A Pending JPH06260433A (en) | 1993-03-04 | 1993-03-04 | Semiconductor manufacturing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06260433A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008021945A (en) * | 2006-07-14 | 2008-01-31 | Oki Electric Ind Co Ltd | Semiconductor manufacturing apparatus, and method of manufacturing semiconductor device |
| CN117253773A (en) * | 2023-11-10 | 2023-12-19 | 雅安宇焜芯材材料科技有限公司 | Heating preparation system for semiconductor manufacturing |
-
1993
- 1993-03-04 JP JP6941493A patent/JPH06260433A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008021945A (en) * | 2006-07-14 | 2008-01-31 | Oki Electric Ind Co Ltd | Semiconductor manufacturing apparatus, and method of manufacturing semiconductor device |
| CN117253773A (en) * | 2023-11-10 | 2023-12-19 | 雅安宇焜芯材材料科技有限公司 | Heating preparation system for semiconductor manufacturing |
| CN117253773B (en) * | 2023-11-10 | 2024-01-23 | 雅安宇焜芯材材料科技有限公司 | Heating preparation system for semiconductor manufacturing |
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