JPH06258149A - Thin-film thermocouple element - Google Patents
Thin-film thermocouple elementInfo
- Publication number
- JPH06258149A JPH06258149A JP3164584A JP16458491A JPH06258149A JP H06258149 A JPH06258149 A JP H06258149A JP 3164584 A JP3164584 A JP 3164584A JP 16458491 A JP16458491 A JP 16458491A JP H06258149 A JPH06258149 A JP H06258149A
- Authority
- JP
- Japan
- Prior art keywords
- film
- temperature
- thin
- thermocouple
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、金属または合金から成
る熱電対素子に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermocouple element made of metal or alloy.
【０００２】[0002]
【従来技術】熱電対は、一般に知られているように、異
なる材料から成る２本の導線のそれぞれの端部を接続
し、二つの接続点の温度差により生じる熱起電力を利用
して温度を測定するのに用いられており、装置の構成が
簡単でしかも測温範囲が広く高温測定に広く利用されて
いる。2. Description of the Related Art As is generally known, a thermocouple connects two ends of two conductors made of different materials to each other and utilizes a thermoelectromotive force generated by a temperature difference between two connecting points. It has a wide range of temperature measurement and is widely used for high temperature measurement.
【０００３】熱電対としては従来種々の形式のものが提
案されているが、その中で薄膜型熱電対は薄い金属箔ま
たは薄い合金箔を重ね合わせて構成されている。Various types of thermocouples have been proposed in the past. Among them, the thin film type thermocouple is constructed by stacking thin metal foils or thin alloy foils.
【０００４】[0004]
【発明が解決しようとする課題】このような従来の薄型
熱電対を利用して温度計測を行う場合、熱電対素子自体
の質量により被温度計測体と熱電対の温度計測部分との
間に温度差が生じたり、同一温度に到達する間でに時間
が掛かるという問題点があった。また、薄型熱電対は被
温度測定体に取り付けた場合には段差が生じ、そのため
平面度の要求される場合には使用できない。更に、薄型
熱電対を被温度計測体に取り付けた場合に、熱電対の剛
性のために薄型熱電対と被温度計測体との間に隙間が生
じ易く、この隙間が正確な温度測定の妨げとなるという
問題点がある。例えば、撓み性の包装体の熱シール部に
おける温度を測定してシール動作における温度を制御す
る場合等に、正確な測温のためには熱電対素子がシール
部と密着できることが重要であり、また熱電対素子が実
質的な厚さをもっているとそのような場合には適用でき
ない。When the temperature is measured by using such a conventional thin thermocouple, the temperature between the object to be measured and the temperature measuring portion of the thermocouple is determined by the mass of the thermocouple element itself. There is a problem that a difference occurs and it takes time to reach the same temperature. Further, the thin thermocouple has a step when attached to the body to be measured, and therefore cannot be used when flatness is required. Furthermore, when the thin thermocouple is attached to the temperature-measuring body, a gap is apt to occur between the thin thermocouple and the temperature-measuring body due to the rigidity of the thermocouple, and this gap hinders accurate temperature measurement. There is a problem that For example, in the case of controlling the temperature in the sealing operation by measuring the temperature at the heat seal portion of the flexible package, it is important that the thermocouple element can be in close contact with the seal portion for accurate temperature measurement, Further, if the thermocouple element has a substantial thickness, it cannot be applied in such a case.
【０００５】そこで、本発明は従来の薄型熱電対に伴う
これらの問題点を解決して被温度計測体の温度を迅速か
つ正確に測定することのできる薄膜型熱電対素子を提供
することを目的としている。Therefore, an object of the present invention is to provide a thin film type thermocouple element capable of solving these problems associated with the conventional thin thermocouple and rapidly and accurately measuring the temperature of an object to be temperature-measured. I am trying.
【０００６】[0006]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明の薄膜型熱電対素子は、基板上に形成され
た金属または合金から成る熱電対形成薄膜層で構成され
ることを特徴としている。好ましくは、基板は被温度計
測体の一部を成し、そしてこの被温度計測体の一部が導
電性である場合には、金属または合金から成る熱電対形
成薄膜層は絶縁層を介して形成され得る。In order to achieve the above object, the thin film thermocouple element of the present invention comprises a thermocouple forming thin film layer made of a metal or an alloy formed on a substrate. It has a feature. Preferably, the substrate forms a part of the temperature-measuring body, and when the part of the temperature-measuring body is electrically conductive, the thermocouple-forming thin film layer made of a metal or an alloy has an insulating layer interposed therebetween. Can be formed.
【０００７】[0007]
【作用】このように構成した本発明による薄膜型熱電対
素子においては、金属または合金から成る熱電対形成薄
膜層は熱電対自体を非常に軽量化でき、また被温度計測
体に取り付けた場合、被温度計測体の昇温、降温に対し
て迅速に追従でき、被温度計測体の温度を迅速かつ正確
に測定することが可能となる。また金属または合金から
成る薄膜層は十分な撓み性をもつことができ、それによ
り被温度計測体に取り付けた時密着性がよくなる。In the thin-film thermocouple element according to the present invention thus constructed, the thermocouple-forming thin-film layer made of metal or alloy can make the thermocouple itself very lightweight, and when it is attached to the temperature-measuring object, It is possible to quickly follow the temperature rise and fall of the object to be measured, and it is possible to measure the temperature of the object to be measured quickly and accurately. Further, the thin film layer made of a metal or an alloy can have sufficient flexibility, which improves the adhesiveness when it is attached to the body to be temperature-measured.
【０００８】[0008]
【実施例】以下、添付図面を参照して本発明の実施例に
ついて説明する。図１〜図３には本発明の一実施例を示
し、１はポリイミドフィルムから成る基板で、その上に
クロメル（Ni-Cr-Fe）の膜２及びアルメル（Ni-Fe-Mn-A
l-Si）の膜３がスパッタリング法により1000オングスト
ームの厚さに形成されている。膜２及び膜３の一端は図
示したように互いに重ね合せて形成されている。この場
合基板１の大きさ、基板１上に形成される各膜２、３の
形状及び寸法等は使用目的に任意に設定され得る。Embodiments of the present invention will be described below with reference to the accompanying drawings. 1 to 3 show an embodiment of the present invention, in which 1 is a substrate made of a polyimide film, on which a chromel (Ni-Cr-Fe) film 2 and an alumel (Ni-Fe-Mn-A) are provided.
The film 3 of (l-Si) is formed in a thickness of 1000 angstrom by the sputtering method. One ends of the membrane 2 and the membrane 3 are formed so as to overlap each other as shown. In this case, the size of the substrate 1 and the shapes and dimensions of the films 2 and 3 formed on the substrate 1 can be arbitrarily set for the purpose of use.
【０００９】このように構成された図示実施例による薄
膜型熱電対素子の温度応答特性を従来の薄型熱電対素子
と比較して図４に示す。図４には一定の温度Ｔまで加熱
した時の昇温及び降温曲線が示され、点線は従来の薄型
熱電対素子の場合であり、また実線は本発明の場合であ
る。これらの曲線から、本発明による薄膜型の熱電対素
子は従来の薄型熱電対素子に比べて温度応答性が速いこ
とが認められる。FIG. 4 shows the temperature response characteristics of the thin film type thermocouple device according to the illustrated embodiment constructed as described above in comparison with the conventional thin thermocouple device. FIG. 4 shows temperature rising and cooling curves when heated to a constant temperature T. The dotted line is the case of the conventional thin thermocouple element, and the solid line is the case of the present invention. From these curves, it is recognized that the thin film thermocouple element according to the present invention has a faster temperature response than the conventional thin thermocouple element.
【００１０】ところで、図示実施例は被温度計測体に着
脱できるように構成されているが、被温度計測体自体を
基板として用い、被温度計測体上に直接熱電対形成膜を
成膜するようにすることもできる。その場合、被温度計
測体が導電性である時には被温度計測体表面に薄い絶縁
膜を形成し、その上に熱電対形成膜を形成するようにさ
れ得る。また、図示実施例においては熱電対形成膜はク
ロメル（Ni-Cr-Fe）及びアルメル（Ni-Fe-Mn-Al-Si）か
ら成っているが、代わりに、Pt-RhPt 、W-Ru、Fe- コン
スタンタン、Cu- コンスタンタン、Au-Co 、Bi-Sb 、W-
WMo 、W-Re等を用いることができる。更に、図示実施例
では、熱電対形成膜を基板上に形成するのにスパッタリ
ング法が用いられているが、当然他の成膜法、例えば真
空蒸着法、イオンプレーティング法等のPVD 法、CVD 法
等を適宜用いることができる。By the way, although the illustrated embodiment is constructed so that it can be attached to and detached from the temperature-measuring body, the temperature-measuring body itself is used as a substrate to form a thermocouple-forming film directly on the temperature-measuring body. You can also In that case, when the temperature measurement target is conductive, a thin insulating film may be formed on the temperature measurement target surface, and a thermocouple forming film may be formed thereon. Further, in the illustrated embodiment, the thermocouple forming film is made of chromel (Ni-Cr-Fe) and alumel (Ni-Fe-Mn-Al-Si), but instead, Pt-RhPt, W-Ru, Fe- Constantan, Cu- Constantan, Au-Co, Bi-Sb, W-
WMo, W-Re, etc. can be used. Further, in the illustrated embodiment, the sputtering method is used to form the thermocouple forming film on the substrate, but naturally other film forming methods, for example, a vacuum deposition method, a PVD method such as an ion plating method, and a CVD method are used. The method can be used as appropriate.
【００１１】更にまた、別の実施例として、本発明を高
温測定用の熱電対測温素子として実施する場合には、基
板を金属フィルムで構成し、この金属ィルム上に絶縁膜
を形成し、その上に熱電対形成膜が形成される。これに
より高温での使用が可能となる。As another embodiment, when the present invention is carried out as a thermocouple temperature measuring element for high temperature measurement, the substrate is made of a metal film and an insulating film is formed on the metal film. A thermocouple forming film is formed thereon. This enables use at high temperatures.
【００１２】[0012]
【発明の効果】以上説明してきたように、本発明による
薄膜型熱電対素子においては、基板上に形成された金属
または合金から成る熱電対形成薄膜層で構成しているの
で、従来の薄型熱電対素子に比較して温度応答特性が速
くなり、被温度計測体の温度をより速く測定することが
できる。また薄膜構造であるため、撓み性があり、薄膜
型熱電対素子の取り付けられる被温度計測体の部位が曲
面状であっても容易に密着させることができ、正確な温
度測定が可能となる。As described above, in the thin film type thermocouple element according to the present invention, the thin film thermocouple element formed of the metal or alloy formed on the substrate constitutes the thin film type thermoelectric element of the conventional thin type. The temperature response characteristic becomes faster than that of the paired element, and the temperature of the temperature measurement target can be measured faster. Further, since it has a thin film structure, it has flexibility, and even if the portion of the temperature measurement target to which the thin film thermocouple element is attached has a curved surface, it can be brought into close contact easily, and accurate temperature measurement becomes possible.
【図１】 ：本発明の一実施例による薄膜型熱電対素子
を示す概略平面図。FIG. 1 is a schematic plan view showing a thin film type thermocouple element according to an embodiment of the present invention.
【図２】 ：図１に示す薄膜型熱電対素子の概略側面
図。2 is a schematic side view of the thin-film thermocouple element shown in FIG.
【図３】 ：図１に示す薄膜型熱電対素子の概略端面
図。3 is a schematic end view of the thin film type thermocouple element shown in FIG.
【図４】 ：本発明の薄膜型熱電対素子の温度応答特性
を従来の薄型熱電対素子と比較して示すグラフ。FIG. 4 is a graph showing the temperature response characteristics of the thin film thermocouple element of the present invention in comparison with a conventional thin thermocouple element.
１：基板 ２：熱電対形成膜 ３：熱電対形成膜 1: Substrate 2: Thermocouple forming film 3: Thermocouple forming film
───────────────────────────────────────────────────── フロントページの続き (72)発明者 森田 正 茨城県つくば市花畑３−８−２ エルディ ム大竹２−205 (72)発明者 稲川 幸之助 茨城県つくば市大字下広岡419−74 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Tadashi Morita 3-8-2 Hanabata, Tsukuba City, Ibaraki Prefecture 205-205 Erdim Otake (72) Inventor Konosuke Inagawa 419-74 Shimohirooka, Tsukuba City, Ibaraki Prefecture
Claims (3)
る熱電対形成薄膜層で構成したことを特徴とする薄膜型
熱電対素子。1. A thin film type thermocouple element comprising a thermocouple forming thin film layer made of a metal or an alloy formed on a substrate.
に記載の薄膜型熱電対素子。2. The substrate is a part of the temperature measurement object.
The thin film type thermocouple element according to.
り、その上に絶縁層を介して金属または合金から成る熱
電対形成薄膜層が形成されている請求項１に記載の薄膜
型熱電対素子。3. The thin film according to claim 1, wherein the substrate is a part of a conductive object to be temperature-measured, and a thermocouple-forming thin film layer made of metal or alloy is formed on the substrate through an insulating layer. Type thermocouple element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3164584A JPH06258149A (en) | 1991-07-04 | 1991-07-04 | Thin-film thermocouple element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3164584A JPH06258149A (en) | 1991-07-04 | 1991-07-04 | Thin-film thermocouple element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06258149A true JPH06258149A (en) | 1994-09-16 |
Family
ID=15795953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3164584A Pending JPH06258149A (en) | 1991-07-04 | 1991-07-04 | Thin-film thermocouple element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06258149A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004004419A1 (en) * | 2002-06-26 | 2004-01-08 | Nippon Valqua Industries, Ltd. | Planar heating body with temperature detector |
| JP2006292703A (en) * | 2005-04-05 | 2006-10-26 | Yoshinobu Abe | Thermocouple |
| WO2008038922A1 (en) * | 2006-09-28 | 2008-04-03 | Electronics And Telecommunications Research Institute | High-power device having thermocouple embedded therein and method for manufacturing the same |
| US8517605B2 (en) | 2009-09-18 | 2013-08-27 | Northwestern University | Bimetallic integrated on-chip thermocouple array |
| DE102017125257A1 (en) * | 2017-10-27 | 2019-05-02 | Airbus Operations Gmbh | FOIL WITH INTEGRATED TEMPERATURE MEASURING EQUIPMENT |
| WO2019146060A1 (en) * | 2018-01-26 | 2019-08-01 | 理化工業株式会社 | Method for manufacturing chromel-alumel thermocouple |
| CN111238671A (en) * | 2020-01-20 | 2020-06-05 | 温州大学 | High-precision flexible temperature sensor protected by inert gas and preparation method thereof |
-
1991
- 1991-07-04 JP JP3164584A patent/JPH06258149A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004004419A1 (en) * | 2002-06-26 | 2004-01-08 | Nippon Valqua Industries, Ltd. | Planar heating body with temperature detector |
| JP2006292703A (en) * | 2005-04-05 | 2006-10-26 | Yoshinobu Abe | Thermocouple |
| JP4671752B2 (en) * | 2005-04-05 | 2011-04-20 | 可伸 安部 | thermocouple |
| WO2008038922A1 (en) * | 2006-09-28 | 2008-04-03 | Electronics And Telecommunications Research Institute | High-power device having thermocouple embedded therein and method for manufacturing the same |
| US8294247B2 (en) | 2006-09-28 | 2012-10-23 | Electronics And Telecommunications Research Institute | High-power device having thermocouple embedded therein and method for manufacturing the same |
| US8517605B2 (en) | 2009-09-18 | 2013-08-27 | Northwestern University | Bimetallic integrated on-chip thermocouple array |
| DE102017125257A1 (en) * | 2017-10-27 | 2019-05-02 | Airbus Operations Gmbh | FOIL WITH INTEGRATED TEMPERATURE MEASURING EQUIPMENT |
| WO2019146060A1 (en) * | 2018-01-26 | 2019-08-01 | 理化工業株式会社 | Method for manufacturing chromel-alumel thermocouple |
| CN111238671A (en) * | 2020-01-20 | 2020-06-05 | 温州大学 | High-precision flexible temperature sensor protected by inert gas and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |