JPH06244097A - Semiconductor wafer development method - Google Patents
Semiconductor wafer development methodInfo
- Publication number
- JPH06244097A JPH06244097A JP4997093A JP4997093A JPH06244097A JP H06244097 A JPH06244097 A JP H06244097A JP 4997093 A JP4997093 A JP 4997093A JP 4997093 A JP4997093 A JP 4997093A JP H06244097 A JPH06244097 A JP H06244097A
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- Prior art keywords
- developer
- gap
- wafer
- wafers
- developing solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体デバイス製造の
フォトリソグラフィー工程における半導体ウエハの現像
方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for developing a semiconductor wafer in a photolithography process for manufacturing a semiconductor device.
【０００２】[0002]
【従来の技術】半導体デバイス製造のフォトリソグラフ
ィー工程では、半導体ウエハの表面にフォトレジストを
塗布し（レジスト塗布工程）、レジスト上にマスクパタ
ーンを焼き付けてから（露光工程）、レジストの感光部
もしくは非感光部を選択的に現像液に溶解させて（現像
工程）、ウエハ表面にレジストパターンを形成するよう
にしている。従来より、この種の現像工程には、ウエハ
表面のレジストに現像液を噴霧するスプレー方式、ウエ
ハを現像液中に漬けるディップ方式、ウエハを水平状態
にしてその上に現像液を盛るパドル方式等が使用されて
いる。2. Description of the Related Art In a photolithography process for manufacturing a semiconductor device, a photoresist is applied to the surface of a semiconductor wafer (resist applying process), a mask pattern is printed on the resist (exposure process), and then a photosensitive portion of the resist or The photosensitive portion is selectively dissolved in a developing solution (developing step) to form a resist pattern on the wafer surface. Conventionally, in this type of developing process, a spray method in which a developing solution is sprayed on a resist on a wafer surface, a dipping method in which the wafer is immersed in the developing solution, a paddle method in which the developing solution is placed on the wafer in a horizontal state, etc. Is used.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記の
ような従来の現像方法のいずれも、現像液の使用に無駄
があり、現像液の消費量が多いという問題がある。スプ
レー方式およびディップ方式の現像液消費量が多いこと
はいうまでもないが、パドル方式もウエハ１枚毎に現像
液を盛るので効率的ではない。また、これら従来の方式
では、現像液がウエハ裏面やウエハ支持部材に被った
り、振りかかったり、回り込んだりして付着しやすく、
汚染の問題がある。さらに、パドル方式では、現像液を
ウエハ上に万遍無く盛るのが難しいという問題もある。However, all of the above-mentioned conventional developing methods have a problem that the developer is wasted and the developer is consumed in a large amount. Needless to say, the spray method and the dip method consume a large amount of the developing solution, but the paddle method is not efficient because the developing solution is deposited for each wafer. In addition, in these conventional methods, the developing solution easily adheres to the back surface of the wafer or the wafer support member, sprinkles, and wraps around,
There is a pollution problem. Further, the paddle method has a problem that it is difficult to uniformly spread the developing solution on the wafer.
【０００４】本発明は、かかる問題点に鑑みてなされた
もので、現像液を効率的にウエハ表面に盛って現像液消
費量の節約化をはかるとともに、ウエハ裏面や支持部材
等への現像液の付着・汚染を防止するようにした半導体
ウエハ現像方法を提供することを目的とする。The present invention has been made in view of the above problems. The developer is efficiently deposited on the front surface of the wafer to save the consumption of the developer, and at the same time, the developer on the back surface of the wafer, a supporting member, etc. It is an object of the present invention to provide a semiconductor wafer developing method capable of preventing the adhesion and contamination of the semiconductor wafer.
【０００５】[0005]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明の半導体ウエハ現像方法は、現像すべき一
対の半導体ウエハのそれぞれの表面を所定の間隙を介し
て互いに対向させ、毛管現象を利用して前記間隙内を現
像液で満たし、前記一対の半導体ウエハのそれぞれの表
面を前記間隙内の前記現像液に浸す方法とした。In order to achieve the above object, a semiconductor wafer developing method according to the present invention comprises a capillary tube in which the surfaces of a pair of semiconductor wafers to be developed are opposed to each other with a predetermined gap therebetween. By utilizing the phenomenon, the gap is filled with the developing solution, and the respective surfaces of the pair of semiconductor wafers are immersed in the developing solution in the gap.
【０００６】[0006]
【作用】相対向している一対の半導体ウエハの間隙に現
像液が注入されると、毛管現象によって現像液は間隙内
で四方に拡がり、両ウエハの表面に満遍無く行き渡る。
そして、間隙内に充満した現像液は、表面張力で間隙内
に保持される。この状態で、両ウエハの表面が間隙内の
現像液に浸され、２枚同時に現像される。When the developing solution is injected into the gap between the pair of semiconductor wafers facing each other, the developing solution spreads in all directions in the gap due to the capillary phenomenon and spreads evenly over the surfaces of both wafers.
The developer filled in the gap is held in the gap by surface tension. In this state, the surfaces of both wafers are immersed in the developer in the gap, and two sheets are simultaneously developed.
【０００７】[0007]
【実施例】以下、添付図を参照して本発明の実施例を説
明する。図１および図２は、第１の実施例による現像方
法を示す。図１において、一対の半導体ウエハ１０，１
２は、予め露光処理を施されており、それぞれの表面１
０ａ，１２ａに塗付されているフォトレジストにはマス
クパターンが焼き付けられている。両半導体ウエハ１
０，１２は、それぞれ裏面１０ｂ，１２ｂにてチャック
１４，１６に吸着保持され、支持棒１８，２０を介して
ウエハ支持体２２，２４に支持されている。ウエハ支持
体２２，２４は、それぞれＸＹステージ２６，２８に担
持されている。Embodiments of the present invention will be described below with reference to the accompanying drawings. 1 and 2 show a developing method according to the first embodiment. In FIG. 1, a pair of semiconductor wafers 10, 1
2 has been previously subjected to an exposure treatment, and each surface 1
A mask pattern is printed on the photoresist applied to 0a and 12a. Both semiconductor wafers 1
0 and 12 are adsorbed and held by chucks 14 and 16 on back surfaces 10b and 12b, respectively, and are supported by wafer supports 22 and 24 via support rods 18 and 20, respectively. The wafer supports 22 and 24 are carried on XY stages 26 and 28, respectively.
【０００８】本実施例によれば、ＸＹステージ２６，２
８あるいは支持棒１８，２０を矢印Ａの方向に移動また
は伸縮させて、半導体ウエハ１０，１２の表面１０ａ，
１２ａが所定のわずかな間隙（たとえば１．０ｍｍ）Ｇ
を介して平行に相対向するように、両ウエハ１０，１２
を接近させる。そして、ノズル３０より上方から間隙Ｇ
内に現像液Ｄを注入する。そうすると、毛管現象によっ
て現像液Ｄは間隙Ｇ内で四方に拡がり、遂には現像液Ｄ
がウエハ１０，１２の表面１０ａ，１２ａに万遍無く行
き渡る。こうして間隙Ｇ内に充満した現像液Ｄは、表面
張力によって間隙Ｇ内に保持される。この状態でウエハ
１０，１２の表面１０ａ，１２ａが間隙Ｇ内の現像液Ｄ
に所定時間浸されることで、２枚同時に現像される。According to this embodiment, the XY stages 26, 2
8 or the support rods 18, 20 are moved or expanded / contracted in the direction of arrow A to move the front surface 10a of the semiconductor wafer 10, 12
12a is a predetermined small gap (eg 1.0 mm) G
Both wafers 10, 12 so that they face each other in parallel with each other.
To approach. Then, from above the nozzle 30, the gap G
The developer D is injected into the inside. Then, the developer D spreads in all directions in the gap G due to the capillary phenomenon, and finally the developer D
Spread evenly over the surfaces 10a, 12a of the wafers 10, 12. The developer D thus filled in the gap G is held in the gap G by the surface tension. In this state, the surfaces 10a and 12a of the wafers 10 and 12 have the developer D in the gap G.
Two sheets are developed at the same time by immersing in two sheets for a predetermined time.
【０００９】このように、本実施例では、毛管現象を利
用して間隙Ｇ内を現像液Ｄで満たすようにしたので、現
像液Ｄを少ない液量で効率よく２枚のウエハ１０，１２
の表面（現像面）１０ａ，１２ａに同時に盛ることがで
きる。また、現像液Ｄは表面張力で間隙Ｇ内に保持され
るため、ウエハ１０，１２の側面や裏面１０ｂ，１２ｂ
側に回り込んだり、チヤック１４，１６等に付着するこ
とはない。したがって汚染のおそれがない。As described above, in this embodiment, the gap G is filled with the developing solution D by utilizing the capillarity, so that the developing solution D can be efficiently supplied with a small amount of the two wafers 10 and 12.
Can be simultaneously formed on the surfaces (developing surfaces) 10a and 12a of the. Further, since the developing solution D is held in the gap G by the surface tension, the side surfaces of the wafers 10 and 12 and the back surfaces 10b and 12b.
It does not wrap around to the side or adhere to the chucks 14, 16 or the like. Therefore, there is no risk of contamination.
【００１０】なお、支持棒１８，２０を矢印Ｂの方向に
回す機構をウエハ支持体２２，２４にそれぞれ設け、現
像液Ｄの注入時にウエハ１０，１２をゆっくりと、たと
えば３０ｒｐｍの回転速度で回して、間隙Ｇ内における
現像液Ｄの拡がりを促すようにしてもよい。また、その
ような回転駆動機構を設けた場合は、現像後に、ウエハ
１０，１２を離間させたうえで各々を高速度たとえば２
０００ｒｐｍの回転速度で回して、ウエハ上の現像液Ｄ
を振り払ってよい。また、図２に示すように、支持棒１
８，２０を矢印Ｃの方向に回動させる機構をウエハ支持
体２２，２４にそれぞれ設けて、現像液Ｄの注入時には
間隙Ｇの上部が少し開くようにウエハ１０，１２を幾ら
か傾けて、現像液Ｄを間隙Ｇ内に入り込みやすくし、注
入後にウエハ１０，１２を図１の平行状態（姿勢）にす
るようにしてもよい。A mechanism for rotating the support rods 18 and 20 in the direction of arrow B is provided on the wafer supports 22 and 24, respectively, and the wafers 10 and 12 are slowly rotated at a rotation speed of, for example, 30 rpm when the developing solution D is injected. Thus, the spread of the developing solution D in the gap G may be promoted. When such a rotation drive mechanism is provided, after the development, the wafers 10 and 12 are separated from each other and each of them is moved at a high speed, for example, 2
Rotate at a rotation speed of 000 rpm to obtain the developer D on the wafer.
You may shake off. Further, as shown in FIG.
Mechanisms for rotating 8 and 20 in the direction of arrow C are provided on the wafer supports 22 and 24, respectively, and when injecting the developing solution D, the wafers 10 and 12 are slightly inclined so that the upper part of the gap G is slightly opened. The developer D may easily enter the gap G, and the wafers 10 and 12 may be brought into the parallel state (posture) of FIG. 1 after the injection.
【００１１】図３は、第２の実施例による現像方法を示
す。この実施例では、図３の(A) に示すように、一対の
半導体ウエハ１０，１２を所定の間隔を置いて平行に対
向させ、その中間に図３の(B) に示すような両面型の現
像液吐出板３２を挿入して、両ウエハ１０，１２の表面
１０ａ，１２ａに適当量の現像液Ｄを振りかける。次
に、現像液吐出板３２を抜き取り、両ウエハ１０，１２
を互いに近付けて両者間の間隔を所定の間隙Ｇまで縮め
る。そうすると、ウエハ表面１０ａ，１２ａに付着して
いた現像液Ｄは毛管現象により間隙Ｇ内で四方に拡がっ
てウエハ表面１０ａ，１２ａに万遍無く行き渡り、図１
と同様に間隙Ｇ内に現像液Ｄが満たされた状態となる。FIG. 3 shows a developing method according to the second embodiment. In this embodiment, as shown in FIG. 3A, a pair of semiconductor wafers 10 and 12 are opposed to each other in parallel at a predetermined interval, and a double-sided type as shown in FIG. The developing solution discharge plate 32 is inserted, and an appropriate amount of the developing solution D is sprinkled on the surfaces 10a, 12a of the two wafers 10, 12. Next, the developing solution discharge plate 32 is pulled out, and both wafers 10 and 12 are
Are brought close to each other to reduce the distance between them to a predetermined gap G. Then, the developer D adhered to the wafer surfaces 10a and 12a spreads in all directions in the gap G due to the capillary phenomenon and evenly spreads over the wafer surfaces 10a and 12a.
Similarly to the above, the gap G is filled with the developer D.
【００１２】図４は、上記した第２の実施例の一変形例
を示す。上記第２の実施例における現像液吐出板３２は
両面に吐出孔３２ａのみを設けたものであるのに対し、
この変形例における現像液吐出板３４は両面に吐出孔３
４ａだけでなく吸入孔３４ｂをも設けている。また、現
像液吐出板３４の内部の空間は、現像液導入口３４ｃお
よび各吐出孔３４ａに連通した現像液供給室と、各吸入
孔３４ｂおよび現像液排出口３４ｄに連通した現像液排
出室とに区分されている。かかる現像液吐出板３４にお
いては、各吐出孔３４ａより吐出された現像液Ｄが対向
するウエハ面に当たり、跳ね返った液は吸入孔３４ｂに
吸引され回収されるようになっている。したがって、現
像液Ｄは両ウエハ面１０ａ，１２ａに塗られるようにし
て付着することになる。FIG. 4 shows a modification of the second embodiment described above. In contrast to the developer discharge plate 32 in the second embodiment, which has only discharge holes 32a on both sides,
The developer discharge plate 34 in this modification has discharge holes 3 on both sides.
Not only 4a but also a suction hole 34b is provided. Further, the space inside the developing solution discharge plate 34 has a developing solution supply chamber communicating with the developing solution introducing port 34c and each discharge hole 34a, and a developing solution discharge chamber communicating with each suction hole 34b and the developing solution discharge port 34d. It is divided into. In the developer discharge plate 34, the developer D discharged from each discharge hole 34a hits the opposing wafer surface, and the splashed liquid is sucked into the suction hole 34b and collected. Therefore, the developing solution D is attached so as to be applied to both wafer surfaces 10a and 12a.
【００１３】図５は、上記第１実施例の一変形例を示
す。上記第１実施例ではノズル３０によって一対のウエ
ハ１０，１２間の間隙Ｇ内に現像液Ｄを注入したが、こ
の変形例では間隙Ｇの上半部に覆い被さるような馬蹄形
の現像液吐出管３６を用いて多数の吐出孔３６ａから現
像液Ｄを間隙Ｇ内に注入するようにしたものである。FIG. 5 shows a modification of the first embodiment. In the first embodiment, the developing solution D is injected into the gap G between the pair of wafers 10 and 12 by the nozzle 30, but in this modified example, a horseshoe-shaped developing solution discharge pipe that covers the upper half portion of the gap G. 36, the developer D is injected into the gap G from a large number of ejection holes 36a.
【００１４】図６は、第３の実施例による現像方法を示
す。この実施例では、毛管現象を最大限に利用して両ウ
エハ１０，１２間の間隙Ｇ内に現像液Ｄを注入するよう
にしたものである。つまり、図６の(A) に示すように、
現像液Ｄの液溜４０の液面に両ウエハ１０，１２の下端
を接触させ、毛管現象で現像液Ｄを液面から間隙Ｇ内に
上昇させる。その際、間隙Ｇ内における現像液Ｄの行き
渡りをよくするため、図６の(B) に示すように、両ウエ
ハ１０，１２を静かに回してもよい。FIG. 6 shows a developing method according to the third embodiment. In this embodiment, the developing solution D is injected into the gap G between the wafers 10 and 12 by utilizing the capillarity to the maximum extent. That is, as shown in FIG.
The lower ends of both wafers 10 and 12 are brought into contact with the liquid surface of the liquid reservoir 40 of the developer D, and the developer D is raised from the liquid surface into the gap G by a capillary phenomenon. At this time, in order to improve the spread of the developing solution D in the gap G, both wafers 10 and 12 may be gently rotated as shown in FIG.
【００１５】図７および図８は、第４の実施例による現
像方法を示す。この実施例は、現像後のリンスも同一の
ウエハ支持機構で行うようにしたものである。図解の便
宜上一方のウエハ１０に対する支持機構だけを図示して
いるが、他方のウエハ１２についても同様の支持機構が
設けられてよい。この実施例のウエハ支持機構におい
て、ウエハ支持体２２は、水平起立駆動部４２を介して
ステージ４４に支持されている。7 and 8 show a developing method according to the fourth embodiment. In this embodiment, the same wafer supporting mechanism is used for rinsing after development. Although only the support mechanism for one wafer 10 is shown for convenience of illustration, a similar support mechanism may be provided for the other wafer 12. In the wafer support mechanism of this embodiment, the wafer support 22 is supported by the stage 44 via the horizontal erection drive unit 42.
【００１６】現像時には、図７に示すように、水平起立
駆動部４２によりウエハ支持体２２および支持棒１８を
水平に倒して、ウエハ１０を垂直に立て、その姿勢でた
とえば上記第１実施例の方法によって現像を行う。現像
が終了すると、ウエハ１０をウエハ１２から離間させ、
垂直姿勢のまま高速度（たとえば２０００ｒｐｍ）で回
して現像液Ｄを振り切る。次に、水平起立駆動部４２に
よりウエハ支持体２２および支持棒１８を垂直に起こし
て、ウエハ１０を水平にする。そして、上方から支持棒
４６によりカップ４８をウエハ１０の高さ位置まで降下
させ、図８に示すように、カップ４８がウエハ１０を囲
むようにする。カップ４８を二分割可能に構成すること
で、図示のようにカップ４８の下端部の内径がウエハ１
０の径より小さくても、カップ４８内にウエハ１０を収
容することが可能である。このように、カップ４８内に
ウエハ１０を収容した状態で、上方からリンス用のノズ
ル５０を降して、ノズル５０よりウエハ１０の表面１０
ａに向けてリンス液Ｒを吐出させる。一方、支持棒１８
を介してウエハ１０を適当な回転速度たとえば２０００
ｒｐｍで回す。これにより、リンス液Ｒがウエハ１０の
表面１０ａに満遍無くかけられ、現像液Ｄが洗い落とさ
れる。排液Ｒ’は、カップ４８の底に集められてから排
出口４８ａより排水管５２を介してドレインタンク（図
示せず）へ送られる。なお、上記現像液Ｄの振り切り
は、図８に示すようにカップ４８がウエハ１０を囲むよ
うな状態で行ってもよい。At the time of development, as shown in FIG. 7, the wafer support 22 and the support rod 18 are tilted horizontally by the horizontal erection drive unit 42, and the wafer 10 is erected vertically. Develop according to the method. When the development is completed, the wafer 10 is separated from the wafer 12,
The developer D is shaken off by rotating at a high speed (for example, 2000 rpm) in a vertical posture. Next, the horizontal erection drive unit 42 vertically raises the wafer support 22 and the support rods 18 to make the wafer 10 horizontal. Then, the cup 48 is lowered to the height position of the wafer 10 from above by the support rod 46, and the cup 48 surrounds the wafer 10 as shown in FIG. By configuring the cup 48 so that it can be divided into two parts, the inner diameter of the lower end portion of the cup 48 becomes smaller than that of the wafer 1 as shown in the drawing.
Even if the diameter is smaller than 0, the wafer 10 can be accommodated in the cup 48. Thus, with the wafer 10 accommodated in the cup 48, the rinse nozzle 50 is lowered from above, and the surface 10 of the wafer 10 is removed from the nozzle 50.
The rinse liquid R is discharged toward a. On the other hand, the support rod 18
The wafer 10 is rotated at an appropriate rotation speed, for example, 2000
Turn at rpm. As a result, the rinse liquid R is evenly applied to the surface 10a of the wafer 10, and the developer D is washed off. The drainage R ′ is collected at the bottom of the cup 48 and then sent from the drain port 48 a to the drain tank (not shown) via the drain pipe 52. The developer D may be shaken off in a state where the cup 48 surrounds the wafer 10 as shown in FIG.
【００１７】本実施例によれば、現像工程において現像
液Ｄがウエハ１０の裏面１０ｂやチヤック１４等に回り
込まないので、リンス工程ではウエハ１０の表面１０ａ
だけを洗浄すればよく、裏面洗浄を行わなくて済む。す
なわち、現像液のウエハとの接触は、ウエハの処理面の
みとすることが可能となる。According to the present embodiment, the developing solution D does not enter the back surface 10b of the wafer 10 or the chuck 14 in the developing process, so that the front surface 10a of the wafer 10 in the rinsing process.
You only have to clean the backside and you don't have to do the backside cleaning. That is, the contact of the developing solution with the wafer can be performed only on the processing surface of the wafer.
【００１８】以上、好適な実施例について説明したが、
本発明は上記実施例に限定されるものでは決してなく、
その技術的思想の範囲内で種々の変形・変更が可能であ
る。たとえば、上記した第１ないし第３の実施例では、
一対のウエハ１０，１２を垂直に立てた状態で間隙Ｇに
上方から現像液Ｄを注入するようにした。このような垂
直注入方式によれば、現像液Ｄは毛管現象に加えて自重
により比較的速い速度で間隙Ｇの下部まで到達すること
ができる。しかし、ウエハ１０，１２を斜めに傾けた状
態で、あるいはほぼ水平に保った状態で、両者間の間隙
Ｇ内に現像液Ｄを注入することも可能である。The preferred embodiment has been described above.
The present invention is by no means limited to the above examples,
Various modifications and changes are possible within the scope of the technical idea. For example, in the above-mentioned first to third embodiments,
With the pair of wafers 10 and 12 standing vertically, the developing solution D is injected into the gap G from above. According to such a vertical injection method, the developer D can reach the lower portion of the gap G at a relatively high speed due to its own weight in addition to the capillary phenomenon. However, it is also possible to inject the developing solution D into the gap G between the wafers 10 and 12 in a state where the wafers 10 and 12 are inclined, or in a state where they are kept substantially horizontal.
【００１９】[0019]
【発明の効果】以上説明したように、本発明の半導体ウ
エハ現像方法によれば、一対の半導体ウエハを近接対向
させて、その間隙内に毛管現象を利用して現像液を盛る
ようにしたので、現像液の使用効率が非常に高く、現像
液の消費量を大幅に節約することが可能であり、また現
像液がウエハの裏面側や支持部材等へ回り込まないので
汚染を防止することができる。As described above, according to the semiconductor wafer developing method of the present invention, the pair of semiconductor wafers are closely opposed to each other, and the developing solution is filled in the gap by utilizing the capillary phenomenon. The use efficiency of the developing solution is very high, the consumption of the developing solution can be greatly saved, and the developing solution does not wrap around to the back surface side of the wafer, the supporting member, etc., so that the contamination can be prevented. .
【図１】本発明の第１の実施例による現像方法を示す略
側面図である。FIG. 1 is a schematic side view showing a developing method according to a first embodiment of the present invention.
【図２】第１の実施例による現像方法における現像液の
注入方法の一変形例を示す略側面図である。FIG. 2 is a schematic side view showing a modified example of a method of injecting a developing solution in the developing method according to the first embodiment.
【図３】第２の実施例による現像方法を示す略側面図で
ある。FIG. 3 is a schematic side view showing a developing method according to a second embodiment.
【図４】第２の実施例による現像方法における現像液の
注入方法の一変形例を示す略側面図である。FIG. 4 is a schematic side view showing a modified example of a method of injecting a developing solution in the developing method according to the second embodiment.
【図５】第１の実施例による現像方法における現像液の
注入方法の別の変形例を示す略側面図である。FIG. 5 is a schematic side view showing another modification of the method for injecting the developing solution in the developing method according to the first embodiment.
【図６】第３の実施例による現像方法を示す略側面図で
ある。FIG. 6 is a schematic side view showing a developing method according to a third embodiment.
【図７】第４の実施例による現像方法における現像工程
を示す略側面図である。FIG. 7 is a schematic side view showing a developing step in the developing method according to the fourth embodiment.
【図８】第４の実施例による現像方法におけるリンス工
程を示す略側面図である。FIG. 8 is a schematic side view showing a rinse step in a developing method according to a fourth embodiment.
１０，１２ 半導体ウエハ １４，１６ チャック １８，２０ 支持棒 ２２，２４ ウエハ支持体 ３０ ノズル ３２，３４ 現像液吐出板 10, 12 Semiconductor wafer 14, 16 Chuck 18, 20 Support rod 22, 24 Wafer support 30 Nozzle 32, 34 Developer discharge plate
Claims (1)
れの表面を所定の間隙を介して互いに対向させ、毛管現
象を利用して前記間隙内を現像液で満たし、前記一対の
半導体ウエハのそれぞれの表面を前記間隙内の前記現像
液に浸すことを特徴とする半導体ウエハ現像方法。1. Surfaces of a pair of semiconductor wafers to be developed are made to face each other with a predetermined gap, and the gap is filled with a developing solution by utilizing a capillary phenomenon. A method for developing a semiconductor wafer, characterized in that the surface is immersed in the developer in the gap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4997093A JP2984963B2 (en) | 1993-02-16 | 1993-02-16 | Semiconductor wafer development method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4997093A JP2984963B2 (en) | 1993-02-16 | 1993-02-16 | Semiconductor wafer development method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06244097A true JPH06244097A (en) | 1994-09-02 |
| JP2984963B2 JP2984963B2 (en) | 1999-11-29 |
Family
ID=12845884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4997093A Expired - Fee Related JP2984963B2 (en) | 1993-02-16 | 1993-02-16 | Semiconductor wafer development method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2984963B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002184685A (en) * | 2000-12-19 | 2002-06-28 | Risotetsuku Japan Kk | Development method |
| WO2004093170A1 (en) * | 2003-04-14 | 2004-10-28 | Tokyo Electron Limited | Developing method and developing device |
| JP2009253109A (en) * | 2008-04-08 | 2009-10-29 | Shimadzu Corp | Seal forming device for laminated wafer end face and seal formation method |
| WO2016181791A1 (en) * | 2015-05-11 | 2016-11-17 | 富士フイルム株式会社 | Image developing device, image developing method, pattern forming device, and pattern forming method |
-
1993
- 1993-02-16 JP JP4997093A patent/JP2984963B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002184685A (en) * | 2000-12-19 | 2002-06-28 | Risotetsuku Japan Kk | Development method |
| WO2004093170A1 (en) * | 2003-04-14 | 2004-10-28 | Tokyo Electron Limited | Developing method and developing device |
| JP2009253109A (en) * | 2008-04-08 | 2009-10-29 | Shimadzu Corp | Seal forming device for laminated wafer end face and seal formation method |
| WO2016181791A1 (en) * | 2015-05-11 | 2016-11-17 | 富士フイルム株式会社 | Image developing device, image developing method, pattern forming device, and pattern forming method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2984963B2 (en) | 1999-11-29 |
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