JP2002184685A - Development method - Google Patents
Development methodInfo
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- JP2002184685A JP2002184685A JP2000385908A JP2000385908A JP2002184685A JP 2002184685 A JP2002184685 A JP 2002184685A JP 2000385908 A JP2000385908 A JP 2000385908A JP 2000385908 A JP2000385908 A JP 2000385908A JP 2002184685 A JP2002184685 A JP 2002184685A
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- substrate
- resist
- developing
- state
- pattern
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】本発明は、半導体集積回路、液晶表示装
置、プリント基板などで用いるレジストの現像方法およ
びそのための装置に関する。The present invention relates to a method for developing a resist used for a semiconductor integrated circuit, a liquid crystal display device, a printed circuit board, and the like, and an apparatus therefor.
【０００２】リソグラフィー技術は、基板上に塗布した
フォトレジスト等の電磁波に感度を持つ樹脂に、露光装
置を用いてマスクパターンを転写し、現像することによ
って回路を形成する技術である。従来の現像方法は、露
光後のウェーハを、塗布面を鉛直上方に向け、上方から
現像液を供給し、一定時間当該樹脂を現像液に接触させ
て溶解することにより、パターンを形成している。しか
し、めっき用レジストや感光性ポリイミドなど、膜厚が
厚い場合又は膨潤が起こり易いレジストの現像工程にお
いては、溶解した樹脂が現像液内に拡散せず、本来は樹
脂が除去されるべきパターンの谷間に堆積して現像残さ
となったり、溶解し切れなかった樹脂の一部がパターン
上に再付着するなど、パターンの不良の原因となる場合
がある。また、現像残さを取り除くために、現像時間を
長くしたり、スプレーの吐出圧力を高めるなどの方法を
取らざるを得ず、これによりパターン形状の劣化やパタ
ーン倒れが生ずることがある。さらに、レジスト材料に
よっては、樹脂の溶解よりもむしろ剥離によって像形成
が進むと見られるものもある。特にこのような場合に
は、剥離した樹脂塊を現像系外に迅速に排出する必要が
ある。The lithography technique is a technique for forming a circuit by transferring a mask pattern to a resin, such as a photoresist applied on a substrate, which is sensitive to electromagnetic waves using an exposure apparatus, and developing the resin. In a conventional developing method, a pattern is formed on an exposed wafer by directing a coating surface vertically upward, supplying a developing solution from above, and dissolving the resin in contact with the developing solution for a certain period of time. . However, when developing a resist such as a plating resist or a photosensitive polyimide having a large film thickness or a swelling-prone resist, the dissolved resin does not diffuse into the developing solution, and the pattern of the resin from which the resin should be removed should be removed. In some cases, the resin may accumulate in the valleys to cause development residue, or a part of the resin that has not been completely dissolved may reattach to the pattern, thereby causing a pattern defect. Further, in order to remove the development residue, it is necessary to take a method such as elongating the development time or increasing the discharge pressure of the spray, which may cause deterioration of the pattern shape or collapse of the pattern. Further, depending on the resist material, image formation may be expected to proceed by peeling rather than by dissolving the resin. Particularly in such a case, it is necessary to rapidly discharge the separated resin mass outside the developing system.
【０００３】本発明者らは、従来は上向きで水平に保持
されたまま現像されていた基板を、それ以外の状態で、
たとえば傾けて、あるいは下向きにして現像することに
よりすぐれた結果が得られることを見いだし、本発明を
完成した。本発明は、レジスト塗布面が上向きであっ
て、かつ基板が水平である状態以外の状態で基板を保持
し、現像することを特徴とする現像方法に関する。レジ
スト塗布面が上向きの場合には、本発明は、レジスト塗
布面を上向きにして、水平でない状態で基板を保持し、
現像することを特徴とする現像方法を提供するものであ
る。基板は上向きで水平から少なくとも５度、好ましく
は１０度、より好ましくは少なくとも１５度、２０度、
もしくは３０度傾斜し、最も好ましくは４５度以上傾斜
している。[0003] The inventors of the present invention have developed a substrate which has been conventionally developed while being held upward and horizontally, and in other states,
For example, it has been found that excellent results can be obtained by developing, for example, tilting or facing downward, and the present invention has been completed. The present invention relates to a developing method characterized in that a substrate is held and developed in a state other than a state in which a resist coating surface is upward and the substrate is horizontal. When the resist-coated surface is upward, the present invention holds the substrate in a non-horizontal state with the resist-coated surface facing upward,
Another object of the present invention is to provide a developing method characterized by developing. The substrate is upward and at least 5 degrees from horizontal, preferably 10 degrees, more preferably at least 15 degrees, 20 degrees,
Alternatively, it is inclined at 30 degrees, most preferably at least 45 degrees.
【０００４】「レジスト塗布面が上向きであって、かつ
基板が水平である状態」とは、図１（ａ）に示すよう
に、レジスト塗布面が上を向いており、基板の面が水平
である状態をいう。本発明においては、これ以外の状態
で基板が保持されたまま現像が行われる。「レジスト塗
布面を上向きにして、水平でない状態」とは、たとえば
図１（ｂ）に示すように、レジストが塗布された面が上
を向いているが、基板の面が水平ではない状態をいう。
上向きで水平から５度傾いているとは、レジスト塗布面
が上を向いているが、基板の面と水平面とのなす角が５
度である状態を言う。また、「レジスト塗布面を下向き
にして基板を保持」するとは、たとえば図１（ｃ）に示
すように、基板に塗布されたレジスト面が下向きになる
ように基板が保持されている状態をいう。さらに「レジ
スト塗布面を下向きにして、水平に基板を保持」すると
は、図１（ｄ）に示すように、レジストが塗布された面
が下を向いた状態で基板が水平に保持されることをい
う。さらに本発明においては、図１の（ｅ）に示すよう
に、基板が鉛直に保持されたまま現像され現像方法も提
供される。なお、図１においては、斜線で示す層がレジ
スト層であり、斜線のない部分が基板を示す。[0004] "The state where the resist-coated surface is upward and the substrate is horizontal" means that the resist-coated surface is upward and the substrate surface is horizontal as shown in FIG. Refers to a certain state. In the present invention, development is performed while the substrate is held in other states. The “state in which the resist-coated surface faces upward and is not horizontal” means, for example, a state in which the surface coated with the resist faces upward but the surface of the substrate is not horizontal, as shown in FIG. Say.
The term “upward and inclined by 5 degrees from horizontal” means that the resist coating surface is facing upward, but the angle between the substrate surface and the horizontal plane is 5 degrees.
A state that is a degree. Further, "holding the substrate with the resist applied surface facing downward" means, for example, a state where the substrate is held with the resist surface applied to the substrate facing downward, as shown in FIG. 1C. . Further, "holding the substrate horizontally with the resist-coated surface facing downward" means that the substrate is held horizontally with the resist-coated surface facing downward as shown in FIG. 1 (d). Say. Further, in the present invention, as shown in FIG. 1E, a developing method is provided in which the substrate is developed while being held vertically. In FIG. 1, the layer indicated by oblique lines is a resist layer, and the portion without oblique lines indicates a substrate.
【０００５】本発明においては、好ましくはレジスト塗
布面を下向きにして基板を保持した状態で現像が行わ
れ、最も好ましくはレジスト塗布面を下向きにして、水
平に基板を保持した状態で現像が行われる。In the present invention, development is preferably performed with the substrate held with the resist-coated surface facing down, and most preferably with the substrate held horizontally with the resist-coated surface facing down. Will be
【０００６】本発明はさらに上記の現像方法を実施する
ための現像装置に関する。本発明の現像装置は、現像方
法の態様に応じて、以下の３態様がある。 Ａ．１） レジスト塗布面が上向きであって、水平でな
い状態に基板を保持する手段、および ２） 前記１）の状態において現像液と基板表面上のレ
ジストを接触させる手段、を有する現像装置。 Ｂ． １） レジスト塗布面が上を向いていた基板を、
レジスト塗布面が下向きとなるように移動させる手段、 ２） レジスト塗布面を下向きに基板を保持する手段、
および ３） 前記２）の状態において現像液と基板表面上のレ
ジストを接触させる手段、を有する現像装置。 Ｃ． １） 基板を水平な状態から鉛直にする手段、 ２） 基板を鉛直に保持する手段、および ３） 前記２）の状態において現像液と基板表面上のレ
ジストを接触させる手段、 を有する現像装置。The present invention further relates to a developing device for performing the above-described developing method. The developing device of the present invention has the following three modes according to the mode of the developing method. A. 1) A developing apparatus comprising: means for holding the substrate in a state in which the resist coating surface faces upward and is not horizontal; and 2) means for bringing the developing solution into contact with the resist on the substrate surface in the state of 1). B. 1) Substrate with resist-coated surface facing up
Means for moving the resist application surface downward, 2) means for holding the substrate with the resist application surface downward,
And 3) means for bringing the developer into contact with the resist on the substrate surface in the state of 2). C. A developing apparatus comprising: 1) means for vertically moving a substrate from a horizontal state, 2) means for holding a substrate vertically, and 3) means for bringing a developing solution into contact with a resist on a substrate surface in the state of 2).
【０００７】現像工程前においてレジスト塗布面を上に
して水平で保持されていた基板を、横向きまたは下向き
に移動させる手段は公知であり、当業者が適当な装置を
適宜選択することができる。基板を保持する手段は、公
知のものが使用できるが、たとえばバキュームによる保
持手段、クリップによる保持手段、および爪による保持
手段等が好適に利用できる。現像液と基板表面上のレジ
ストを接触させる手段は、公知のものが使用できるが、
たとえば浸漬またはスプレー等の方法を用いることがで
きる。スプレーを用いる場合には、適宜スプレーの位置
を移動させたり噴出パターンを変化させることができ
る。Means for moving the substrate, which has been held horizontally with the resist-coated surface up before the development step, horizontally or downward is known, and those skilled in the art can appropriately select an appropriate apparatus. As the means for holding the substrate, a known means can be used. For example, a holding means using a vacuum, a holding means using a clip, a holding means using a claw, and the like can be suitably used. As a means for contacting the developer and the resist on the substrate surface, known means can be used,
For example, a method such as immersion or spraying can be used. When using a spray, the position of the spray can be moved or the ejection pattern can be changed as appropriate.
【０００８】図２に本発明の現像装置における現像ヘッ
ドの概略図を示す。図２に示すヘッドにおいては、ウエ
ハー固定チャック１によりウエハー２を固定し、レジス
ト面を下向きにしたまま保持し、現像液４を有する現像
カップ３内に浸漬している。なお、現像カップ内の現像
液は現像液ディスペンス口から適宜必要に応じ排出され
るとともに、必要に応じ現像液を加えることができる。FIG. 2 is a schematic view of a developing head in the developing device of the present invention. In the head shown in FIG. 2, a wafer 2 is fixed by a wafer fixing chuck 1, held with the resist surface facing downward, and immersed in a developing cup 3 having a developing solution 4. The developing solution in the developing cup is discharged from the developing solution dispensing port as needed, and the developing solution can be added as needed.
【０００９】本方法によれば、現像中の基板から流れ落
ちた樹脂塊は、重力を利用して速やかに現像液中に落下
するため、樹脂塊の付着によるパターンの現像不良を防
止できる。また、解像度も向上される。According to this method, the resin mass that has flowed down from the substrate being developed quickly falls into the developing solution by using gravity, so that the pattern development failure due to the adhesion of the resin mass can be prevented. Also, the resolution is improved.
【００１０】実施例 実施例１：直径４インチのシリコン基板に、スピンコー
ト法によりフォトレジストＰＭＥＲＰ−ＬＡ−９００Ｐ
Ｍ（東京応化工業社製）を厚さ１０μｍに塗布した。プ
リベーク温度は１１０℃、５分とした。次いでｇ線ステ
ッパを用いてパターンを露光した。ステッパの条件はＮ
Ａ０．３０、露光波長４３６ｎｍ（ＦＷＨＭ１０ｎ
ｍ）、照明系のコヒーレンスファクターは０．５とした
（ＤＳＷ−４８００ ＧＣＡ社製）。露光パターンは１
０μｍコンタクトホール（ピッチ２０μｍ）、５μｍコ
ンタクトホール（ピッチ１０μｍ）、２μｍコンタクト
ホール（ピッチ４μｍ）である。この基板について、従
来の現像方法と本方式で現像し、パターニングを行い比
較した。現像時間はいずれも４００秒である。現像後の
パターンを顕微鏡により比較した。露光面積は２０ｍｍ
×２０ｍｍであり、転写パターン数はいずれも１０００
個である。顕微鏡によりパターン底部に現像残さが存在
するパターンを欠陥として計測した。計測結果を表１に
示す。本方式の方がいずれのパターンサイズにおいても
欠陥数が少ないことがわかる。図３に１０μｍコンタク
トホールの観察結果を示す。従来方法による結果を示す
（ａ）では残さが発生しているのに対して、本方式によ
る結果を示す（ｂ）では現像残さも発生せず、良好なパ
ターニングがされていることがわかる。EXAMPLES Example 1 Photoresist PMERP-LA-900P was applied to a 4-inch diameter silicon substrate by spin coating.
M (manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied to a thickness of 10 μm. The prebake temperature was 110 ° C. for 5 minutes. The pattern was then exposed using a g-line stepper. Stepper condition is N
A0.30, exposure wavelength 436 nm (FWHM10n
m), the coherence factor of the illumination system was 0.5 (DSW-4800 GCA). Exposure pattern is 1
These are 0 μm contact holes (pitch: 20 μm), 5 μm contact holes (pitch: 10 μm), and 2 μm contact holes (pitch: 4 μm). This substrate was developed by a conventional developing method and this method, patterned, and compared. The development time is 400 seconds in each case. The pattern after development was compared with a microscope. Exposure area is 20mm
× 20 mm, and the number of transfer patterns is 1000
Individual. Using a microscope, a pattern in which development residue was present at the bottom of the pattern was measured as a defect. Table 1 shows the measurement results. It can be seen that this method has a smaller number of defects at any pattern size. FIG. 3 shows an observation result of a 10 μm contact hole. In (a) showing the result of the conventional method, a residue is generated, whereas in (b) showing the result of the present method, no development residue is generated, and it can be seen that good patterning is performed.
【００１１】[0011]
【表１】 [Table 1]
【００１２】実施例２：直径４インチのシリコン基板
に、スピンコート法によりフォトレジストＯＦＰＲ−８
００（東京応化工業社製）を厚さ１．５μｍに塗布し
た。プリベーク温度は１００℃、２分とした。次いでｇ
線ステッパを用いてパターンを露光した。ステッパの条
件はＮＡ０．４２、露光波長４３６ｎｍ（ＦＷＨＭ１０
ｎｍ）、照明系のコヒーレンスファクターは０．５ と
した（ＤＳＷ−６０００ ＧＣＡ社製）。露光パターン
は２．０，１．８，１．６，１．４，１．２，１．０，
０．８，０．６μｍラインアンドスペースパターンであ
る。この基板について、従来の現像方法（ａ）と本方式
（ｂ）で現像し、パターニングを行い比較した。現像時
間はいずれも６０秒である。現像後のパターンを顕微鏡
およびＳＥＭにより比較した。図４に２μｍラインアン
ドスペースパターンのＳＥＭ観察結果を示す。従来方法
では２．０μｍパターンが解像していないが、本方式で
は２．０μｍパターンが解像することがわかった。そこ
で、さらに細かなパターンの転写結果を観察した。図５
に２．０，１．８，１．６，１．４，１．２，１．０，
０．８，０．６μｍラインアンドスペースパターンの転
写結果を示す。従来方法では限界解像度が２．０μｍパ
ターンである（１２）が、本方式では１．４μｍまで解
像する（１４）ことがわかる。Example 2: A photoresist OFPR-8 was formed on a silicon substrate having a diameter of 4 inches by spin coating.
00 (manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied to a thickness of 1.5 μm. The prebake temperature was 100 ° C. for 2 minutes. Then g
The pattern was exposed using a line stepper. The condition of the stepper is NA 0.42, exposure wavelength 436 nm (FWHM10
nm), and the coherence factor of the illumination system was 0.5 (DSW-6000 GCA). The exposure pattern is 2.0, 1.8, 1.6, 1.4, 1.2, 1.0,
These are 0.8 and 0.6 μm line and space patterns. This substrate was developed by the conventional developing method (a) and the present method (b), patterned, and compared. The development time is 60 seconds in each case. The pattern after development was compared with a microscope and an SEM. FIG. 4 shows the results of SEM observation of a 2 μm line and space pattern. It was found that a 2.0 μm pattern was not resolved in the conventional method, but a 2.0 μm pattern was resolved in the present method. Then, the transfer result of a finer pattern was observed. FIG.
2.0, 1.8, 1.6, 1.4, 1.2, 1.0,
The transfer results of 0.8 and 0.6 μm line and space patterns are shown. It can be seen that in the conventional method, the limit resolution is a 2.0 μm pattern (12), but in the present method, the resolution is up to 1.4 μm (14).
【００１３】本発明は、レジストを塗布した基板を鉛直
下方、横方向、または斜め向きに保持して現像を行うこ
とを特徴としている。浸漬（ディップ法）、スプレー法
またはこれらを組み合わせたあるいは、複数の現像槽や
超音波現像槽、複数のスプレーノズルを組み合わせて使
用することも可能であることは自明である。また、実施
例ではシリコン基板を用いたが、本発明は任意の材質、
形状に適用可能であり、たとえばプリント基板、ＣＤお
よびＭＤ原板などにも適用することができる。The present invention is characterized in that development is carried out while holding the substrate coated with the resist vertically downward, laterally or obliquely. Obviously, it is also possible to use an immersion (dip method), a spray method or a combination thereof, or a combination of a plurality of developing tanks, ultrasonic developing tanks and a plurality of spray nozzles. In addition, although a silicon substrate was used in the embodiments, the present invention is not limited to any material,
The present invention can be applied to shapes, and can be applied to, for example, a printed circuit board, a CD, and an MD original.
【図１】 図１は本発明における基板の保持の態様を示
す図である。FIG. 1 is a view showing a mode of holding a substrate in the present invention.
【図２】 図２は本発明の現像装置における現像ヘッド
の概略図である。FIG. 2 is a schematic diagram of a developing head in the developing device of the present invention.
【図３】 図３は実施例１における結果を示す図であ
る。FIG. 3 is a diagram showing a result in Example 1.
【図４】 図４は実施例２における結果を示す図であ
る。FIG. 4 is a diagram showing a result in Example 2.
【図５】 図５は実施例２における結果を示す図であ
る。FIG. 5 is a view showing a result in Example 2.
１：ウエハー固定チャック ２：ウエハー ３：現像カップ ４：現像液 ５：現像液ディスペンス口 ６：水平面 ７：基板の面と水平面とのなす角度 １０：残さ １２：ラインアンドスペースが２．０ミクロンのパター
ン １４：ラインアンドスペースが１．４ミクロンのパター
ン1: Wafer fixing chuck 2: Wafer 3: Developing cup 4: Developing liquid 5: Developing liquid dispensing opening 6: Horizontal plane 7: Angle between substrate surface and horizontal plane 10: Leftover 12: Line and space of 2.0 microns Pattern 14: Pattern with line and space of 1.4 microns
───────────────────────────────────────────────────── フロントページの続き (72)発明者 関口 淳 埼玉県川口市並木２−６−６−201 リソ テック ジャパン株式会社内 (72)発明者 南 洋一 埼玉県川口市並木２−６−６−201 リソ テック ジャパン株式会社内 Ｆターム(参考） 2H096 AA25 AA26 GA21 GA60 5F046 LA05 LA14 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Jun Sekiguchi 2-6-6-201 Namiki, Kawaguchi City, Saitama Prefecture Within Riso Tech Japan Co., Ltd. (72) Inventor Yoichi Minami 2-6-6, Namiki Kawaguchi City, Saitama Prefecture 201 F-term in Litho Tech Japan Co., Ltd. (reference) 2H096 AA25 AA26 GA21 GA60 5F046 LA05 LA14
Claims (8)
基板が水平である状態以外の状態で基板を保持し、現像
することを特徴とする現像方法。1. A developing method, wherein a substrate is held and developed in a state other than a state in which a resist-coated surface faces upward and the substrate is horizontal.
ない状態で基板を保持し、現像することを特徴とする現
像方法。2. A developing method comprising: holding a substrate in a non-horizontal state with a resist-coated surface facing upward; and developing the substrate.
持して、現像することを特徴とする現像方法。3. A developing method, wherein a substrate is held and developed with a resist-coated surface facing down.
基板を保持し、現像することを特徴とする現像方法。4. A developing method comprising: holding a substrate horizontally with the resist-coated surface facing downward, and developing the substrate.
徴とする現像方法。5. A developing method, wherein a substrate is held vertically and developed.
て、水平でない状態に基板を保持する手段、および２）
前記１）の状態において現像液と基板表面上のレジス
トを接触させる手段、を有する現像装置。6. A means for holding the substrate in a state where the resist coating surface is upward and not horizontal, and 2)
Means for contacting the developing solution with the resist on the substrate surface in the state of 1).
基板を、レジスト塗布面が下向きとなるように移動させ
る手段、２） レジスト塗布面を下向きに基板を保持す
る手段、および３） 前記２）の状態において現像液と
基板表面上のレジストを接触させる手段、を有する現像
装置。7. A means for moving a substrate having a resist-coated surface facing upward so that the resist-coated surface faces downward; 2) a means for holding the substrate with the resist-coated surface facing downward; A developing device having means for bringing the developing solution into contact with the resist on the substrate surface in the state of 2).
手段、２） 基板を鉛直に保持する手段、および３）
前記２）の状態において現像液と基板表面上のレジスト
を接触させる手段、を有する現像装置。8. A means for verticalizing a substrate from a horizontal state, 2) means for holding a substrate vertically, and 3)
Means for contacting the developing solution with the resist on the substrate surface in the state of 2).
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| JP2000385908A JP2002184685A (en) | 2000-12-19 | 2000-12-19 | Development method |
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| JP2000385908A JP2002184685A (en) | 2000-12-19 | 2000-12-19 | Development method |
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|---|---|
| JP2002184685A true JP2002184685A (en) | 2002-06-28 |
Family
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Cited By (1)
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|---|---|---|---|---|
| CN103324038A (en) * | 2013-06-25 | 2013-09-25 | 京东方科技集团股份有限公司 | Developing device and developing method |
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