JPH06232383A - Solid-state image pickup element and its manufacture - Google Patents
Solid-state image pickup element and its manufactureInfo
- Publication number
- JPH06232383A JPH06232383A JP5017270A JP1727093A JPH06232383A JP H06232383 A JPH06232383 A JP H06232383A JP 5017270 A JP5017270 A JP 5017270A JP 1727093 A JP1727093 A JP 1727093A JP H06232383 A JPH06232383 A JP H06232383A
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- Japan
- Prior art keywords
- film
- shielding film
- insulating film
- solid
- light
- Prior art date
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- Formation Of Insulating Films (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、２層の遮光膜が設けら
れた固体撮像素子及びその製造方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image sensor having two layers of light-shielding film and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】図３は、従来方法で形成された２層の遮
光膜を有する固体撮像素子の断面図である。図３に示す
様に、従来の２層の遮光膜９及び１１を有する固体撮像
素子において、下部遮光膜９上に直接層間絶縁膜とし
て、例えば、ＰＳＧ膜又はＢＰＳＧ膜１０が形成されて
いる構造となっている。図３において、１は半導体基
板、２はＰウェル領域、３はＣＣＤ領域、４はゲート窒
化膜、５はゲート窒化膜、６は画素分離領域、７は転送
電極、８は受光部を示す。2. Description of the Related Art FIG. 3 is a sectional view of a solid-state image pickup device having a two-layer light-shielding film formed by a conventional method. As shown in FIG. 3, in a conventional solid-state imaging device having two layers of light-shielding films 9 and 11, for example, a PSG film or a BPSG film 10 is directly formed as an interlayer insulating film on the lower light-shielding film 9. Has become. In FIG. 3, 1 is a semiconductor substrate, 2 is a P well region, 3 is a CCD region, 4 is a gate nitride film, 5 is a gate nitride film, 6 is a pixel isolation region, 7 is a transfer electrode, and 8 is a light receiving portion.
【０００３】次に、従来の２層の遮光膜を有する固体撮
像素子の製造方法について説明する。まず、半導体基板
１上にＰウェル領域２を形成した後、ＣＣＤ領域３を形
成し、続いて、全面に形成されているシリコン酸化膜
（図示せず。）を除去し、ゲート酸化膜４及びゲート窒
化膜５をそれぞれ膜厚を例えば、約４００〜８００Å，
約２００〜５００Å堆積させる。Next, a method of manufacturing a conventional solid-state image pickup device having a two-layer light-shielding film will be described. First, the P well region 2 is formed on the semiconductor substrate 1, then the CCD region 3 is formed, and subsequently, the silicon oxide film (not shown) formed on the entire surface is removed, and the gate oxide film 4 and the gate oxide film 4 are formed. Each of the gate nitride films 5 has a film thickness of, for example, about 400 to 800Å,
About 200 to 500 Å is deposited.
【０００４】次に、画素分離領域６，転送電極７及び受
光部８を設けた後、下部遮光膜９として、例えば、ＷＳ
ｉ，ＴｉＷ又はＴｉＮ等を堆積し、パターニングする。Next, after the pixel separation region 6, the transfer electrode 7 and the light receiving portion 8 are provided, a lower light shielding film 9 such as WS is formed.
i, TiW, TiN or the like is deposited and patterned.
【０００５】次に、層間絶縁膜として、ＰＳＧ膜又はＢ
ＰＳＧ膜１０を堆積し、窒素雰囲気中で９００〜１００
０℃でメルトする。例えば、層間絶縁膜としてＢＰＳＧ
膜を用いた場合、膜厚６０００〜９０００Åで、リンの
濃度は約３〜６ｍｏｌ％，ボロンの濃度は約３〜６ｗｔ
％とする。次に、上部遮光膜１１として、Ａｌ−Ｓｉ膜
を膜厚約６０００〜１２０００Å形成する。Next, a PSG film or B is used as an interlayer insulating film.
The PSG film 10 is deposited, and 900-100 in a nitrogen atmosphere.
Melt at 0 ° C. For example, as an interlayer insulating film, BPSG
When a film is used, the film thickness is 6000 to 9000Å, the concentration of phosphorus is about 3 to 6 mol%, and the concentration of boron is about 3 to 6 wt.
%. Next, as the upper light-shielding film 11, an Al-Si film is formed with a film thickness of about 6000 to 12000Å.
【０００６】[0006]
【発明が解決しようとする課題】上述した従来工程を用
いる場合、下部遮光膜９には、ＷＳｉ，ＴｉＷ又はＴｉ
Ｎ等が用いられており、この下部遮光膜９上にＰＳＧ膜
又ＢＰＳＧ膜１０から成る層間絶縁膜が直接堆積するこ
とになり、後のメルト工程の熱処理により、ＷＳｉ，Ｔ
ｉＷ又はＴｉＮ等から成る下部遮光膜９とＰＳＧ膜又は
ＢＰＳＧ膜１０から成る層間絶縁膜との界面でガスが発
生し、気泡が生じる。尚、前記反応は、リン濃度及びボ
ロン濃度が高ければ高い程、また、メルト工程の熱処理
温度が高ければ高い程激しく起こる。When the conventional process described above is used, the lower light-shielding film 9 is formed of WSi, TiW or Ti.
N or the like is used, and the interlayer insulating film made of the PSG film or the BPSG film 10 is directly deposited on the lower light-shielding film 9, and WSi, T
Gas is generated at the interface between the lower light-shielding film 9 made of iW or TiN and the interlayer insulating film made of the PSG film or BPSG film 10 to generate bubbles. The higher the phosphorus concentration and the higher boron concentration, and the higher the heat treatment temperature in the melt process, the more severe the reaction.
【０００７】上述の様にして発生した気泡は、固体撮像
素子の電気的特性、特に、チップ又はウェハー内での感
度のバラツキを起こさせる可能性が高くなる。The air bubbles generated as described above have a high possibility of causing variations in the electrical characteristics of the solid-state image pickup element, particularly in the sensitivity within the chip or wafer.
【０００８】本発明は、ＷＳｉ，ＴｉＷ又はＴｉＮ等か
ら成る遮光膜とＰＳＧ膜又はＢＰＳＧ膜等から成る層間
絶縁膜との界面に気泡を生じさせない手段を提供するこ
とを目的とする。An object of the present invention is to provide a means for preventing bubbles from being generated at the interface between a light-shielding film made of WSi, TiW, TiN or the like and an interlayer insulating film made of a PSG film or a BPSG film.
【０００９】[0009]
【課題を解決するための手段】請求項１記載の本発明の
固体撮像素子は、２層の遮光膜を有する固体撮像素子に
於いて、下部遮光膜上に所定の膜厚の不純物を含まない
絶縁膜が形成され、該不純物を含まない絶縁膜上に所定
の膜厚の不純物を含む絶縁膜が形成され、該不純物を含
む絶縁膜上に上部遮光膜が設けられていることを特徴と
するものである。A solid-state image pickup device according to the present invention according to claim 1 is a solid-state image pickup device having two layers of light-shielding films, wherein the lower light-shielding film does not contain impurities of a predetermined thickness. An insulating film is formed, an insulating film containing an impurity of a predetermined thickness is formed on the insulating film not containing the impurity, and an upper light-shielding film is provided on the insulating film containing the impurity. It is a thing.
【００１０】また、請求項２記載の本発明の固体撮像素
子の製造方法は、２層の遮光膜を有する固体撮像素子の
製造方法に於いて、下部遮光膜を形成した後、所定の膜
厚の不純物を含まない絶縁膜を形成する工程と、該工程
後、所定の膜厚の不純物を含む絶縁膜を形成する工程と
を有することを特徴とするものである。According to a second aspect of the present invention, there is provided a method of manufacturing a solid-state image pickup device according to the present invention, which is the same as the method of manufacturing a solid-state image pickup device having two layers of light-shielding films, after a lower light-shielding film is formed, a predetermined film thickness is formed. And a step of forming an insulating film containing impurities of a predetermined thickness after the step.
【００１１】また、請求項３記載の本発明の固体撮像素
子は、２層の遮光膜を有する固体撮像素子に於いて、前
記２層の遮光膜間にＴＥＯＳ−Ｏ3反応法によって形成
された層間絶縁膜が形成されていることを特徴とするも
のである。According to a third aspect of the present invention, there is provided a solid-state image pickup device having a two-layer light-shielding film, wherein the solid-state image pickup device is formed between the two light-shielding films by a TEOS-O 3 reaction method. It is characterized in that an interlayer insulating film is formed.
【００１２】更に、請求項４記載の本発明の固体撮像素
子の製造方法は、２層の遮光膜を有する固体撮像素子の
製造方法に於いて、下部遮光膜を形成した後、ＴＥＯＳ
−Ｏ 3反応法により層間絶縁膜を形成する工程と、該工
程後、上部遮光膜を形成する工程とを有することを特徴
とするものである。Further, the solid-state image pickup device of the present invention according to claim 4
A method for manufacturing a child is a solid-state image sensor having a two-layer light-shielding film.
In the manufacturing method, after forming the lower light-shielding film, TEOS
-O 3A step of forming an interlayer insulating film by a reaction method, and
After that, a step of forming an upper light-shielding film is included.
It is what
【００１３】[0013]
【作用】上記請求項１及び２記載の本発明を用いること
により、下部遮光膜上に不純物を含まないシリコン酸化
膜及び層間絶縁膜が形成され、下部遮光膜と不純物を含
まないシリコン酸化膜との界面には気泡は生じない。By using the present invention described in claims 1 and 2, a silicon oxide film containing no impurities and an interlayer insulating film are formed on the lower light-shielding film, and the lower light-shielding film and the silicon oxide film containing no impurities are formed. No bubbles are generated at the interface.
【００１４】また、上記請求項３及び４記載の本発明を
用いることにより、下部遮光膜上に低温でメルト性を有
する層間絶縁膜を形成することができるので、下部遮光
膜と層間絶縁膜との界面には気泡は生じない。Further, by using the present invention described in claims 3 and 4, since an interlayer insulating film having a melting property at a low temperature can be formed on the lower light shielding film, the lower light shielding film and the interlayer insulating film can be formed. No bubbles are generated at the interface.
【００１５】[0015]
【実施例】以下、実施例に基づいて、本発明を詳細に説
明する。図１は請求項１及び２記載の本発明の一実施例
の構造断面図、図２は請求項３及び４記載の本発明の一
実施例の構造断面図である。図１及び図２において、１
は半導体基板、２はＰウェル領域、３はＣＣＤ領域、４
はゲート酸化膜、５はゲート窒化膜、６は画素分離領
域、７は転送電極、８は受光部、９は下部遮光膜、１０
は層間絶縁膜としてのＰＳＧ膜又はＢＰＳＧ膜、１１は
上部遮光膜、１２は不純物を有しないシリコン酸化膜、
１３はＴＥＯＳ−Ｏ3反応法により形成された層間絶縁
膜を示す。EXAMPLES The present invention will be described in detail below based on examples. FIG. 1 is a structural sectional view of an embodiment of the present invention described in claims 1 and 2, and FIG. 2 is a structural sectional view of an embodiment of the present invention described in claims 3 and 4. In FIGS. 1 and 2, 1
Is a semiconductor substrate, 2 is a P well region, 3 is a CCD region, 4
Is a gate oxide film, 5 is a gate nitride film, 6 is a pixel isolation region, 7 is a transfer electrode, 8 is a light receiving portion, 9 is a lower light-shielding film, 10
Is a PSG film or BPSG film as an interlayer insulating film, 11 is an upper light-shielding film, 12 is a silicon oxide film having no impurities,
Reference numeral 13 denotes an interlayer insulating film formed by the TEOS-O 3 reaction method.
【００１６】請求項１及び２記載の本発明は、図１に示
すように、下部遮光膜９と層間絶縁膜としてのＰＳＧ膜
又はＢＰＳＧ膜１０との間に、ＣＶＤ法や熱酸化法等に
より形成された不純物を含まないシリコン酸化膜１２等
からなる絶縁膜が形成されていることを特徴とする。ま
た、請求項３及び４記載の本発明は、図２に示すよう
に、下部遮光膜９上にＴＥＯＳ−Ｏ3反応法により形成
されたシリコン酸化膜やＢＰＳＧ膜から成る層間絶縁膜
１３が形成されていることを特徴とする。According to the present invention as set forth in claims 1 and 2, as shown in FIG. 1, a space between the lower light-shielding film 9 and the PSG film or BPSG film 10 as an interlayer insulating film is formed by a CVD method or a thermal oxidation method. It is characterized in that an insulating film made of the formed silicon oxide film 12 or the like containing no impurities is formed. Further, according to the present invention as set forth in claims 3 and 4, as shown in FIG. 2, an interlayer insulating film 13 made of a silicon oxide film or a BPSG film formed by the TEOS-O 3 reaction method is formed on the lower light-shielding film 9. It is characterized by being.
【００１７】次に、図１を用いて請求項１及び２記載の
本発明の一実施例の製造工程を説明する。まず、半導体
基板１上にＰウェル領域２を形成した後、ＣＣＤ領域３
を形成する。続いて、全面に形成されたシリコン酸化膜
（図示せず。）を除去した後、約４００〜８００Åの膜
厚のゲート酸化膜４及び約２００〜５００Åの膜厚のゲ
ート窒化膜５を形成し、画素分離領域６、転送電極７及
び受光部８を設け、下部遮光膜９として、ＷＳｉ，Ｔｉ
Ｗ又はＴｉＮを堆積し、パターニングを行う。Next, the manufacturing process of one embodiment of the present invention described in claims 1 and 2 will be described with reference to FIG. First, after forming the P well region 2 on the semiconductor substrate 1, the CCD region 3 is formed.
To form. Then, after removing the silicon oxide film (not shown) formed on the entire surface, a gate oxide film 4 having a film thickness of about 400 to 800 Å and a gate nitride film 5 having a film thickness of about 200 to 500 Å are formed. The pixel isolation region 6, the transfer electrode 7, and the light receiving portion 8 are provided, and the lower light-shielding film 9 is made of WSi, Ti.
W or TiN is deposited and patterned.
【００１８】次に、下部遮光膜９上に不純物を含まない
シリコン酸化膜１２を熱酸化又はＣＶＤ法を用いて、約
１００〜１０００Å程度堆積させる。不純物を含まない
シリコン酸化膜１２の膜厚を１０００Å以上にすると、
後のフィルタ形成工程等で悪影響が生じる程の段差が生
じ、１００Å以下であると被覆性が劣化する。Next, a silicon oxide film 12 containing no impurities is deposited on the lower light-shielding film 9 by thermal oxidation or the CVD method to a thickness of about 100 to 1000 Å. If the thickness of the silicon oxide film 12 containing no impurities is set to 1000 Å or more,
A step which causes a bad influence is generated in a subsequent filter forming step and the like, and when it is 100 Å or less, the covering property is deteriorated.
【００１９】次に、層間絶縁膜として、リンの濃度を約
３〜６ｍｏｌ％，ボロンの濃度を約３〜６ｗｔ％で、膜
厚が約６０００〜９０００ÅのＢＰＳＧ膜を形成する。
層間絶縁膜としては、ＢＰＳＧ膜の他にＰＳＧ膜も適用
可能である。その後、窒素雰囲気中で、約９００〜１０
００℃で層間絶縁膜をメルトした後、上部遮光膜１１と
して、Ａｌ−Ｓｉ膜を形成する。Next, a BPSG film having a phosphorus concentration of about 3 to 6 mol% and a boron concentration of about 3 to 6 wt% and a thickness of about 6000 to 9000Å is formed as an interlayer insulating film.
As the interlayer insulating film, a PSG film can be applied in addition to the BPSG film. Then, in a nitrogen atmosphere, about 900 to 10
After the interlayer insulating film is melted at 00 ° C., an Al—Si film is formed as the upper light shielding film 11.
【００２０】次に、図２を用いて、請求項３及び４記載
の本発明の一実施例の製造工程を説明する。まず、下部
遮光膜９の形成工程までを上述の実施例と同様に行う。
その後、ＴＥＯＳ−Ｏ3反応法を用いて、常圧で、成膜
温度を約３００〜６００℃、望ましくは約４００℃で、
膜厚約６０００〜９０００Åのシリコン酸化膜を流量が
ＴＥＯＳ（テトラエトキシシラン：Ｓｉ（ＯＣ
2Ｈ5）4）を２．２リットル／ｍｉｎ，Ｏ2を７．５リッ
トル／ｍｉｎの条件下で又はＢＰＳＧ膜を流量がＴＥＯ
Ｓを３．０リットル／ｍｉｎ，ＴＭＰＯを１．０リット
ル／ｍｉｎ，ＴＭＢを３０ｍｇの条件下で形成する。こ
の際、ＴＥＯＳ−Ｏ3反応法により形成された層間絶縁
膜１３はアズーデポ状態でメルト性を有するため、窒素
雰囲気中での９００〜１０００℃のメルト処理を行う必
要がない。その後、上部遮光膜１１としてＡｌ−Ｓｉ膜
を形成する。Next, the manufacturing process of one embodiment of the present invention according to claims 3 and 4 will be described with reference to FIG. First, the steps up to the formation of the lower light-shielding film 9 are performed in the same manner as in the above-described embodiment.
Then, using the TEOS-O 3 reaction method, the film formation temperature is about 300 to 600 ° C., and preferably about 400 ° C. under normal pressure.
A silicon oxide film having a film thickness of about 6000 to 9000Å has a flow rate of TEOS (tetraethoxysilane: Si (OC
2 H 5 ) 4 ) at 2.2 liter / min and O 2 at 7.5 liter / min, or the flow rate of BPSG film is TEO.
S is formed under the conditions of 3.0 liter / min, TMPO is 1.0 liter / min, and TMB is 30 mg. At this time, since the interlayer insulating film 13 formed by the TEOS-O 3 reaction method has the melt property in the as-deposited state, it is not necessary to perform the melt treatment at 900 to 1000 ° C. in the nitrogen atmosphere. Then, an Al-Si film is formed as the upper light-shielding film 11.
【００２１】[0021]
【発明の効果】以上詳細に説明したように、本発明を用
いることにより、ＷＳｉ，ＴｉＷ又はＴｉＮ等から成る
遮光膜と層間絶縁膜との界面における気泡の発生を防ぐ
ことにより、ＣＣＤデバイスの感度のバラツキを防ぐこ
とができる。As described above in detail, the use of the present invention prevents the generation of bubbles at the interface between the light-shielding film made of WSi, TiW, TiN or the like and the interlayer insulating film, thereby improving the sensitivity of the CCD device. Can be prevented from variation.
【図１】請求項１及び２記載の本発明の一実施例の固体
撮像素子の断面図である。FIG. 1 is a sectional view of a solid-state image sensor according to an embodiment of the present invention as set forth in claims 1 and 2.
【図２】請求項３及び４記載の本発明の一実施例の固体
撮像素子の断面図である。FIG. 2 is a sectional view of a solid-state image sensor according to an embodiment of the present invention as set forth in claims 3 and 4.
【図３】従来の２層遮光膜を有する固体撮像素子の断面
図である。FIG. 3 is a sectional view of a conventional solid-state imaging device having a two-layer light-shielding film.
１ 半導体基板 ２ Ｐウェル領域 ３ ＣＣＤ領域 ４ ゲート酸化膜 ５ ゲート窒化膜 ６ 画素分離領域 ７ 転送電極 ８ 受光部 ９ 下部遮光膜 １０ ＰＳＧ膜又はＢＰＳＧ膜 １１ 上部遮光膜 １２ 不純物を有しないシリコン酸化膜 １３ ＴＥＯＳ−Ｏ3反応法により形成された層間絶縁
膜1 semiconductor substrate 2 P well region 3 CCD region 4 gate oxide film 5 gate nitride film 6 pixel separation region 7 transfer electrode 8 light receiving portion 9 lower light-shielding film 10 PSG film or BPSG film 11 upper light-shielding film 12 silicon oxide film without impurities 13 Interlayer insulating film formed by TEOS-O 3 reaction method
Claims (4)
いて、 下部遮光膜上に所定の膜厚の不純物を含まない絶縁膜が
形成され、該不純物を含まない絶縁膜上に所定の膜厚の
不純物を含む絶縁膜が形成され、該不純物を含む絶縁膜
上に上部遮光膜が設けられていることを特徴とする固体
撮像素子。1. A solid-state imaging device having a two-layer light-shielding film, wherein an insulating film containing no impurities having a predetermined film thickness is formed on the lower light-shielding film, and a predetermined film is formed on the insulating film containing no impurities. A solid-state imaging device, comprising: an insulating film containing impurities having a film thickness; and an upper light-shielding film provided on the insulating film containing impurities.
造方法に於いて、 下部遮光膜を形成した後、所定の膜厚の不純物を含まな
い絶縁膜を形成する工程と、 該工程後、所定の膜厚の不純物を含む絶縁膜を形成する
工程とを有することを特徴とする、固体撮像素子の製造
方法。2. A method of manufacturing a solid-state imaging device having a two-layer light-shielding film, comprising the steps of forming a lower light-shielding film and then forming an insulating film not containing impurities of a predetermined thickness, and after the step. And a step of forming an insulating film containing impurities having a predetermined film thickness, the method for manufacturing a solid-state imaging device.
いて、 前記２層の遮光膜間にＴＥＯＳ−Ｏ3反応法によって形
成された層間絶縁膜が形成されていることを特徴とする
固体撮像素子。3. A solid-state imaging device having a two-layer light-shielding film, wherein an interlayer insulating film formed by a TEOS-O 3 reaction method is formed between the two light-shielding films. Solid-state image sensor.
造方法に於いて、 下部遮光膜を形成した後、ＴＥＯＳ−Ｏ3反応法により
層間絶縁膜を形成する工程と、 該工程後、上部遮光膜を形成する工程とを有することを
特徴とする、固体撮像素子の製造方法。4. A method of manufacturing a solid-state imaging device having a two-layer light-shielding film, comprising the steps of forming a lower light-shielding film and then forming an interlayer insulating film by a TEOS-O 3 reaction method, and after the step, And a step of forming an upper light-shielding film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5017270A JPH06232383A (en) | 1993-02-04 | 1993-02-04 | Solid-state image pickup element and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5017270A JPH06232383A (en) | 1993-02-04 | 1993-02-04 | Solid-state image pickup element and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06232383A true JPH06232383A (en) | 1994-08-19 |
Family
ID=11939283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5017270A Pending JPH06232383A (en) | 1993-02-04 | 1993-02-04 | Solid-state image pickup element and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06232383A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0818025A (en) * | 1994-06-30 | 1996-01-19 | Nec Corp | Solid image pickup element |
| US5594236A (en) * | 1993-12-14 | 1997-01-14 | Nippondenso Co., Ltd. | Sunlight sensor |
-
1993
- 1993-02-04 JP JP5017270A patent/JPH06232383A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5594236A (en) * | 1993-12-14 | 1997-01-14 | Nippondenso Co., Ltd. | Sunlight sensor |
| JPH0818025A (en) * | 1994-06-30 | 1996-01-19 | Nec Corp | Solid image pickup element |
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