JPH06232383A - Solid-state image pickup element and its manufacture - Google Patents
Solid-state image pickup element and its manufactureInfo
- Publication number
- JPH06232383A JPH06232383A JP5017270A JP1727093A JPH06232383A JP H06232383 A JPH06232383 A JP H06232383A JP 5017270 A JP5017270 A JP 5017270A JP 1727093 A JP1727093 A JP 1727093A JP H06232383 A JPH06232383 A JP H06232383A
- Authority
- JP
- Japan
- Prior art keywords
- film
- shielding film
- insulating film
- solid
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Solid State Image Pick-Up Elements (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、2層の遮光膜が設けら
れた固体撮像素子及びその製造方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image sensor having two layers of light-shielding film and a method for manufacturing the same.
【0002】[0002]
【従来の技術】図3は、従来方法で形成された2層の遮
光膜を有する固体撮像素子の断面図である。図3に示す
様に、従来の2層の遮光膜9及び11を有する固体撮像
素子において、下部遮光膜9上に直接層間絶縁膜とし
て、例えば、PSG膜又はBPSG膜10が形成されて
いる構造となっている。図3において、1は半導体基
板、2はPウェル領域、3はCCD領域、4はゲート窒
化膜、5はゲート窒化膜、6は画素分離領域、7は転送
電極、8は受光部を示す。2. Description of the Related Art FIG. 3 is a sectional view of a solid-state image pickup device having a two-layer light-shielding film formed by a conventional method. As shown in FIG. 3, in a conventional solid-state imaging device having two layers of light-shielding films 9 and 11, for example, a PSG film or a BPSG film 10 is directly formed as an interlayer insulating film on the lower light-shielding film 9. Has become. In FIG. 3, 1 is a semiconductor substrate, 2 is a P well region, 3 is a CCD region, 4 is a gate nitride film, 5 is a gate nitride film, 6 is a pixel isolation region, 7 is a transfer electrode, and 8 is a light receiving portion.
【0003】次に、従来の2層の遮光膜を有する固体撮
像素子の製造方法について説明する。まず、半導体基板
1上にPウェル領域2を形成した後、CCD領域3を形
成し、続いて、全面に形成されているシリコン酸化膜
(図示せず。)を除去し、ゲート酸化膜4及びゲート窒
化膜5をそれぞれ膜厚を例えば、約400〜800Å,
約200〜500Å堆積させる。Next, a method of manufacturing a conventional solid-state image pickup device having a two-layer light-shielding film will be described. First, the P well region 2 is formed on the semiconductor substrate 1, then the CCD region 3 is formed, and subsequently, the silicon oxide film (not shown) formed on the entire surface is removed, and the gate oxide film 4 and the gate oxide film 4 are formed. Each of the gate nitride films 5 has a film thickness of, for example, about 400 to 800Å,
About 200 to 500 Å is deposited.
【0004】次に、画素分離領域6,転送電極7及び受
光部8を設けた後、下部遮光膜9として、例えば、WS
i,TiW又はTiN等を堆積し、パターニングする。Next, after the pixel separation region 6, the transfer electrode 7 and the light receiving portion 8 are provided, a lower light shielding film 9 such as WS is formed.
i, TiW, TiN or the like is deposited and patterned.
【0005】次に、層間絶縁膜として、PSG膜又はB
PSG膜10を堆積し、窒素雰囲気中で900〜100
0℃でメルトする。例えば、層間絶縁膜としてBPSG
膜を用いた場合、膜厚6000〜9000Åで、リンの
濃度は約3〜6mol%,ボロンの濃度は約3〜6wt
%とする。次に、上部遮光膜11として、Al−Si膜
を膜厚約6000〜12000Å形成する。Next, a PSG film or B is used as an interlayer insulating film.
The PSG film 10 is deposited, and 900-100 in a nitrogen atmosphere.
Melt at 0 ° C. For example, as an interlayer insulating film, BPSG
When a film is used, the film thickness is 6000 to 9000Å, the concentration of phosphorus is about 3 to 6 mol%, and the concentration of boron is about 3 to 6 wt.
%. Next, as the upper light-shielding film 11, an Al-Si film is formed with a film thickness of about 6000 to 12000Å.
【0006】[0006]
【発明が解決しようとする課題】上述した従来工程を用
いる場合、下部遮光膜9には、WSi,TiW又はTi
N等が用いられており、この下部遮光膜9上にPSG膜
又BPSG膜10から成る層間絶縁膜が直接堆積するこ
とになり、後のメルト工程の熱処理により、WSi,T
iW又はTiN等から成る下部遮光膜9とPSG膜又は
BPSG膜10から成る層間絶縁膜との界面でガスが発
生し、気泡が生じる。尚、前記反応は、リン濃度及びボ
ロン濃度が高ければ高い程、また、メルト工程の熱処理
温度が高ければ高い程激しく起こる。When the conventional process described above is used, the lower light-shielding film 9 is formed of WSi, TiW or Ti.
N or the like is used, and the interlayer insulating film made of the PSG film or the BPSG film 10 is directly deposited on the lower light-shielding film 9, and WSi, T
Gas is generated at the interface between the lower light-shielding film 9 made of iW or TiN and the interlayer insulating film made of the PSG film or BPSG film 10 to generate bubbles. The higher the phosphorus concentration and the higher boron concentration, and the higher the heat treatment temperature in the melt process, the more severe the reaction.
【0007】上述の様にして発生した気泡は、固体撮像
素子の電気的特性、特に、チップ又はウェハー内での感
度のバラツキを起こさせる可能性が高くなる。The air bubbles generated as described above have a high possibility of causing variations in the electrical characteristics of the solid-state image pickup element, particularly in the sensitivity within the chip or wafer.
【0008】本発明は、WSi,TiW又はTiN等か
ら成る遮光膜とPSG膜又はBPSG膜等から成る層間
絶縁膜との界面に気泡を生じさせない手段を提供するこ
とを目的とする。An object of the present invention is to provide a means for preventing bubbles from being generated at the interface between a light-shielding film made of WSi, TiW, TiN or the like and an interlayer insulating film made of a PSG film or a BPSG film.
【0009】[0009]
【課題を解決するための手段】請求項1記載の本発明の
固体撮像素子は、2層の遮光膜を有する固体撮像素子に
於いて、下部遮光膜上に所定の膜厚の不純物を含まない
絶縁膜が形成され、該不純物を含まない絶縁膜上に所定
の膜厚の不純物を含む絶縁膜が形成され、該不純物を含
む絶縁膜上に上部遮光膜が設けられていることを特徴と
するものである。A solid-state image pickup device according to the present invention according to claim 1 is a solid-state image pickup device having two layers of light-shielding films, wherein the lower light-shielding film does not contain impurities of a predetermined thickness. An insulating film is formed, an insulating film containing an impurity of a predetermined thickness is formed on the insulating film not containing the impurity, and an upper light-shielding film is provided on the insulating film containing the impurity. It is a thing.
【0010】また、請求項2記載の本発明の固体撮像素
子の製造方法は、2層の遮光膜を有する固体撮像素子の
製造方法に於いて、下部遮光膜を形成した後、所定の膜
厚の不純物を含まない絶縁膜を形成する工程と、該工程
後、所定の膜厚の不純物を含む絶縁膜を形成する工程と
を有することを特徴とするものである。According to a second aspect of the present invention, there is provided a method of manufacturing a solid-state image pickup device according to the present invention, which is the same as the method of manufacturing a solid-state image pickup device having two layers of light-shielding films, after a lower light-shielding film is formed, a predetermined film thickness is formed. And a step of forming an insulating film containing impurities of a predetermined thickness after the step.
【0011】また、請求項3記載の本発明の固体撮像素
子は、2層の遮光膜を有する固体撮像素子に於いて、前
記2層の遮光膜間にTEOS−O3反応法によって形成
された層間絶縁膜が形成されていることを特徴とするも
のである。According to a third aspect of the present invention, there is provided a solid-state image pickup device having a two-layer light-shielding film, wherein the solid-state image pickup device is formed between the two light-shielding films by a TEOS-O 3 reaction method. It is characterized in that an interlayer insulating film is formed.
【0012】更に、請求項4記載の本発明の固体撮像素
子の製造方法は、2層の遮光膜を有する固体撮像素子の
製造方法に於いて、下部遮光膜を形成した後、TEOS
−O 3反応法により層間絶縁膜を形成する工程と、該工
程後、上部遮光膜を形成する工程とを有することを特徴
とするものである。Further, the solid-state image pickup device of the present invention according to claim 4
A method for manufacturing a child is a solid-state image sensor having a two-layer light-shielding film.
In the manufacturing method, after forming the lower light-shielding film, TEOS
-O 3A step of forming an interlayer insulating film by a reaction method, and
After that, a step of forming an upper light-shielding film is included.
It is what
【0013】[0013]
【作用】上記請求項1及び2記載の本発明を用いること
により、下部遮光膜上に不純物を含まないシリコン酸化
膜及び層間絶縁膜が形成され、下部遮光膜と不純物を含
まないシリコン酸化膜との界面には気泡は生じない。By using the present invention described in claims 1 and 2, a silicon oxide film containing no impurities and an interlayer insulating film are formed on the lower light-shielding film, and the lower light-shielding film and the silicon oxide film containing no impurities are formed. No bubbles are generated at the interface.
【0014】また、上記請求項3及び4記載の本発明を
用いることにより、下部遮光膜上に低温でメルト性を有
する層間絶縁膜を形成することができるので、下部遮光
膜と層間絶縁膜との界面には気泡は生じない。Further, by using the present invention described in claims 3 and 4, since an interlayer insulating film having a melting property at a low temperature can be formed on the lower light shielding film, the lower light shielding film and the interlayer insulating film can be formed. No bubbles are generated at the interface.
【0015】[0015]
【実施例】以下、実施例に基づいて、本発明を詳細に説
明する。図1は請求項1及び2記載の本発明の一実施例
の構造断面図、図2は請求項3及び4記載の本発明の一
実施例の構造断面図である。図1及び図2において、1
は半導体基板、2はPウェル領域、3はCCD領域、4
はゲート酸化膜、5はゲート窒化膜、6は画素分離領
域、7は転送電極、8は受光部、9は下部遮光膜、10
は層間絶縁膜としてのPSG膜又はBPSG膜、11は
上部遮光膜、12は不純物を有しないシリコン酸化膜、
13はTEOS−O3反応法により形成された層間絶縁
膜を示す。EXAMPLES The present invention will be described in detail below based on examples. FIG. 1 is a structural sectional view of an embodiment of the present invention described in claims 1 and 2, and FIG. 2 is a structural sectional view of an embodiment of the present invention described in claims 3 and 4. In FIGS. 1 and 2, 1
Is a semiconductor substrate, 2 is a P well region, 3 is a CCD region, 4
Is a gate oxide film, 5 is a gate nitride film, 6 is a pixel isolation region, 7 is a transfer electrode, 8 is a light receiving portion, 9 is a lower light-shielding film, 10
Is a PSG film or BPSG film as an interlayer insulating film, 11 is an upper light-shielding film, 12 is a silicon oxide film having no impurities,
Reference numeral 13 denotes an interlayer insulating film formed by the TEOS-O 3 reaction method.
【0016】請求項1及び2記載の本発明は、図1に示
すように、下部遮光膜9と層間絶縁膜としてのPSG膜
又はBPSG膜10との間に、CVD法や熱酸化法等に
より形成された不純物を含まないシリコン酸化膜12等
からなる絶縁膜が形成されていることを特徴とする。ま
た、請求項3及び4記載の本発明は、図2に示すよう
に、下部遮光膜9上にTEOS−O3反応法により形成
されたシリコン酸化膜やBPSG膜から成る層間絶縁膜
13が形成されていることを特徴とする。According to the present invention as set forth in claims 1 and 2, as shown in FIG. 1, a space between the lower light-shielding film 9 and the PSG film or BPSG film 10 as an interlayer insulating film is formed by a CVD method or a thermal oxidation method. It is characterized in that an insulating film made of the formed silicon oxide film 12 or the like containing no impurities is formed. Further, according to the present invention as set forth in claims 3 and 4, as shown in FIG. 2, an interlayer insulating film 13 made of a silicon oxide film or a BPSG film formed by the TEOS-O 3 reaction method is formed on the lower light-shielding film 9. It is characterized by being.
【0017】次に、図1を用いて請求項1及び2記載の
本発明の一実施例の製造工程を説明する。まず、半導体
基板1上にPウェル領域2を形成した後、CCD領域3
を形成する。続いて、全面に形成されたシリコン酸化膜
(図示せず。)を除去した後、約400〜800Åの膜
厚のゲート酸化膜4及び約200〜500Åの膜厚のゲ
ート窒化膜5を形成し、画素分離領域6、転送電極7及
び受光部8を設け、下部遮光膜9として、WSi,Ti
W又はTiNを堆積し、パターニングを行う。Next, the manufacturing process of one embodiment of the present invention described in claims 1 and 2 will be described with reference to FIG. First, after forming the P well region 2 on the semiconductor substrate 1, the CCD region 3 is formed.
To form. Then, after removing the silicon oxide film (not shown) formed on the entire surface, a gate oxide film 4 having a film thickness of about 400 to 800 Å and a gate nitride film 5 having a film thickness of about 200 to 500 Å are formed. The pixel isolation region 6, the transfer electrode 7, and the light receiving portion 8 are provided, and the lower light-shielding film 9 is made of WSi, Ti.
W or TiN is deposited and patterned.
【0018】次に、下部遮光膜9上に不純物を含まない
シリコン酸化膜12を熱酸化又はCVD法を用いて、約
100〜1000Å程度堆積させる。不純物を含まない
シリコン酸化膜12の膜厚を1000Å以上にすると、
後のフィルタ形成工程等で悪影響が生じる程の段差が生
じ、100Å以下であると被覆性が劣化する。Next, a silicon oxide film 12 containing no impurities is deposited on the lower light-shielding film 9 by thermal oxidation or the CVD method to a thickness of about 100 to 1000 Å. If the thickness of the silicon oxide film 12 containing no impurities is set to 1000 Å or more,
A step which causes a bad influence is generated in a subsequent filter forming step and the like, and when it is 100 Å or less, the covering property is deteriorated.
【0019】次に、層間絶縁膜として、リンの濃度を約
3〜6mol%,ボロンの濃度を約3〜6wt%で、膜
厚が約6000〜9000ÅのBPSG膜を形成する。
層間絶縁膜としては、BPSG膜の他にPSG膜も適用
可能である。その後、窒素雰囲気中で、約900〜10
00℃で層間絶縁膜をメルトした後、上部遮光膜11と
して、Al−Si膜を形成する。Next, a BPSG film having a phosphorus concentration of about 3 to 6 mol% and a boron concentration of about 3 to 6 wt% and a thickness of about 6000 to 9000Å is formed as an interlayer insulating film.
As the interlayer insulating film, a PSG film can be applied in addition to the BPSG film. Then, in a nitrogen atmosphere, about 900 to 10
After the interlayer insulating film is melted at 00 ° C., an Al—Si film is formed as the upper light shielding film 11.
【0020】次に、図2を用いて、請求項3及び4記載
の本発明の一実施例の製造工程を説明する。まず、下部
遮光膜9の形成工程までを上述の実施例と同様に行う。
その後、TEOS−O3反応法を用いて、常圧で、成膜
温度を約300〜600℃、望ましくは約400℃で、
膜厚約6000〜9000Åのシリコン酸化膜を流量が
TEOS(テトラエトキシシラン:Si(OC
2H5)4)を2.2リットル/min,O2を7.5リッ
トル/minの条件下で又はBPSG膜を流量がTEO
Sを3.0リットル/min,TMPOを1.0リット
ル/min,TMBを30mgの条件下で形成する。こ
の際、TEOS−O3反応法により形成された層間絶縁
膜13はアズーデポ状態でメルト性を有するため、窒素
雰囲気中での900〜1000℃のメルト処理を行う必
要がない。その後、上部遮光膜11としてAl−Si膜
を形成する。Next, the manufacturing process of one embodiment of the present invention according to claims 3 and 4 will be described with reference to FIG. First, the steps up to the formation of the lower light-shielding film 9 are performed in the same manner as in the above-described embodiment.
Then, using the TEOS-O 3 reaction method, the film formation temperature is about 300 to 600 ° C., and preferably about 400 ° C. under normal pressure.
A silicon oxide film having a film thickness of about 6000 to 9000Å has a flow rate of TEOS (tetraethoxysilane: Si (OC
2 H 5 ) 4 ) at 2.2 liter / min and O 2 at 7.5 liter / min, or the flow rate of BPSG film is TEO.
S is formed under the conditions of 3.0 liter / min, TMPO is 1.0 liter / min, and TMB is 30 mg. At this time, since the interlayer insulating film 13 formed by the TEOS-O 3 reaction method has the melt property in the as-deposited state, it is not necessary to perform the melt treatment at 900 to 1000 ° C. in the nitrogen atmosphere. Then, an Al-Si film is formed as the upper light-shielding film 11.
【0021】[0021]
【発明の効果】以上詳細に説明したように、本発明を用
いることにより、WSi,TiW又はTiN等から成る
遮光膜と層間絶縁膜との界面における気泡の発生を防ぐ
ことにより、CCDデバイスの感度のバラツキを防ぐこ
とができる。As described above in detail, the use of the present invention prevents the generation of bubbles at the interface between the light-shielding film made of WSi, TiW, TiN or the like and the interlayer insulating film, thereby improving the sensitivity of the CCD device. Can be prevented from variation.
【図1】請求項1及び2記載の本発明の一実施例の固体
撮像素子の断面図である。FIG. 1 is a sectional view of a solid-state image sensor according to an embodiment of the present invention as set forth in claims 1 and 2.
【図2】請求項3及び4記載の本発明の一実施例の固体
撮像素子の断面図である。FIG. 2 is a sectional view of a solid-state image sensor according to an embodiment of the present invention as set forth in claims 3 and 4.
【図3】従来の2層遮光膜を有する固体撮像素子の断面
図である。FIG. 3 is a sectional view of a conventional solid-state imaging device having a two-layer light-shielding film.
1 半導体基板 2 Pウェル領域 3 CCD領域 4 ゲート酸化膜 5 ゲート窒化膜 6 画素分離領域 7 転送電極 8 受光部 9 下部遮光膜 10 PSG膜又はBPSG膜 11 上部遮光膜 12 不純物を有しないシリコン酸化膜 13 TEOS−O3反応法により形成された層間絶縁
膜1 semiconductor substrate 2 P well region 3 CCD region 4 gate oxide film 5 gate nitride film 6 pixel separation region 7 transfer electrode 8 light receiving portion 9 lower light-shielding film 10 PSG film or BPSG film 11 upper light-shielding film 12 silicon oxide film without impurities 13 Interlayer insulating film formed by TEOS-O 3 reaction method
Claims (4)
いて、 下部遮光膜上に所定の膜厚の不純物を含まない絶縁膜が
形成され、該不純物を含まない絶縁膜上に所定の膜厚の
不純物を含む絶縁膜が形成され、該不純物を含む絶縁膜
上に上部遮光膜が設けられていることを特徴とする固体
撮像素子。1. A solid-state imaging device having a two-layer light-shielding film, wherein an insulating film containing no impurities having a predetermined film thickness is formed on the lower light-shielding film, and a predetermined film is formed on the insulating film containing no impurities. A solid-state imaging device, comprising: an insulating film containing impurities having a film thickness; and an upper light-shielding film provided on the insulating film containing impurities.
造方法に於いて、 下部遮光膜を形成した後、所定の膜厚の不純物を含まな
い絶縁膜を形成する工程と、 該工程後、所定の膜厚の不純物を含む絶縁膜を形成する
工程とを有することを特徴とする、固体撮像素子の製造
方法。2. A method of manufacturing a solid-state imaging device having a two-layer light-shielding film, comprising the steps of forming a lower light-shielding film and then forming an insulating film not containing impurities of a predetermined thickness, and after the step. And a step of forming an insulating film containing impurities having a predetermined film thickness, the method for manufacturing a solid-state imaging device.
いて、 前記2層の遮光膜間にTEOS−O3反応法によって形
成された層間絶縁膜が形成されていることを特徴とする
固体撮像素子。3. A solid-state imaging device having a two-layer light-shielding film, wherein an interlayer insulating film formed by a TEOS-O 3 reaction method is formed between the two light-shielding films. Solid-state image sensor.
造方法に於いて、 下部遮光膜を形成した後、TEOS−O3反応法により
層間絶縁膜を形成する工程と、 該工程後、上部遮光膜を形成する工程とを有することを
特徴とする、固体撮像素子の製造方法。4. A method of manufacturing a solid-state imaging device having a two-layer light-shielding film, comprising the steps of forming a lower light-shielding film and then forming an interlayer insulating film by a TEOS-O 3 reaction method, and after the step, And a step of forming an upper light-shielding film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5017270A JPH06232383A (en) | 1993-02-04 | 1993-02-04 | Solid-state image pickup element and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5017270A JPH06232383A (en) | 1993-02-04 | 1993-02-04 | Solid-state image pickup element and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH06232383A true JPH06232383A (en) | 1994-08-19 |
Family
ID=11939283
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5017270A Pending JPH06232383A (en) | 1993-02-04 | 1993-02-04 | Solid-state image pickup element and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH06232383A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0818025A (en) * | 1994-06-30 | 1996-01-19 | Nec Corp | Solid image pickup element |
US5594236A (en) * | 1993-12-14 | 1997-01-14 | Nippondenso Co., Ltd. | Sunlight sensor |
-
1993
- 1993-02-04 JP JP5017270A patent/JPH06232383A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5594236A (en) * | 1993-12-14 | 1997-01-14 | Nippondenso Co., Ltd. | Sunlight sensor |
JPH0818025A (en) * | 1994-06-30 | 1996-01-19 | Nec Corp | Solid image pickup element |
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