JPH0620059B2 - Ion beam processing method - Google Patents
Ion beam processing methodInfo
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- JPH0620059B2 JPH0620059B2 JP5255186A JP5255186A JPH0620059B2 JP H0620059 B2 JPH0620059 B2 JP H0620059B2 JP 5255186 A JP5255186 A JP 5255186A JP 5255186 A JP5255186 A JP 5255186A JP H0620059 B2 JPH0620059 B2 JP H0620059B2
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- processing
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- workpiece
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Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はイオンビーム加工方法に係り、特に、導電体層
と非導電体層より成る複数層を加工深さをモニタしなが
ら加工するのに好適なイオンビーム加工方法に関する。Description: TECHNICAL FIELD The present invention relates to an ion beam processing method, and more particularly, to processing a plurality of layers including a conductive layer and a non-conductive layer while monitoring the processing depth. The present invention relates to a suitable ion beam processing method.
〔従来の技術〕 第６図は、集束イオンビーム加工装置の概略構成図であ
る。第６図において、イオンビーム１は、イオン源14と
引き出し電極15との間に数kVから10数kVの高圧を印加す
ることにより引き出される。引き出されたイオンビーム
１はレンズ16で集束され、スティグマ19でビーム断面形
状が補正され、デフレクタ20で偏向され、テーブル22上
に設置した被加工物であるターゲット21に照射され、タ
ーゲット21をスパッタ加工する。この時ターゲット21か
ら放出される２次イオン３及び２次電子４の荷電粒子が
夫々２次イオンディテクタ28及び２次電子ディテクタ29
で検出される。これら装置は真空ポンプ33で10-6Torrオ
ーダー以上の真空度に排気された真空チャンバ32内に収
納されている。尚、微細な加工を行なうため、全体をエ
アサーボマウント31で浮上させた定盤30上に設置してあ
る。[Prior Art] FIG. 6 is a schematic configuration diagram of a focused ion beam processing apparatus. In FIG. 6, the ion beam 1 is extracted by applying a high voltage of several kV to several tens of kV between the ion source 14 and the extraction electrode 15. The extracted ion beam 1 is focused by a lens 16, the cross-sectional shape of the beam is corrected by a stigma 19, is deflected by a deflector 20, and is irradiated on a target 21 which is a workpiece placed on a table 22 and sputters the target 21. To process. At this time, the charged particles of the secondary ions 3 and secondary electrons 4 emitted from the target 21 are the secondary ion detector 28 and the secondary electron detector 29, respectively.
Detected in. These devices are housed in a vacuum chamber 32 which is evacuated by a vacuum pump 33 to a degree of vacuum of 10 −6 Torr or more. Incidentally, in order to perform fine processing, the whole is installed on a surface plate 30 which is floated by an air servo mount 31.
斯かる構成の集束イオンビーム装置では、イオン源14と
して通常デュオプラズマトロンイオン源が用いられてい
る。これはビーム電流が大きく、ターゲットからの２次
イオンの放出量が多いため、２次イオン検出によって、
その時ビームを照射している面の構成原子を同定でき
る。従って、２次イオンをモニタすることにより加工深
さを制御できることになる。In the focused ion beam device having such a configuration, a duoplasmatron ion source is usually used as the ion source 14. This is because the beam current is large and the amount of secondary ions emitted from the target is large.
At that time, the constituent atoms of the surface irradiated with the beam can be identified. Therefore, the processing depth can be controlled by monitoring the secondary ions.
尚、深さ方向の分析を行なう技術については、講談社発
行、染野，安盛編の「表面分析」61頁に詳しく記載され
ている。The technique for analyzing in the depth direction is described in detail in "Surface Analysis", page 61, published by Kodansha and edited by Someno and Yasumori.
２次イオンを検出して加工深さをモニタする場合、ビー
ム電流を大きくする必要上、１μｍ以下のビーム径は得
られない。このため、１μｍ以下のビーム径が必要なＬ
ＳＩ等の加工には、液体金属イオン源等の高輝度イオン
源が用いられる。しかし、細くビームを絞るためにはビ
ーム電流を小さくせねばならず、ＬＳＩ加工用イオンビ
ーム装置では加工している各面での組成を同定するだけ
の充分な２次イオン量を得られず、これを加工モニタに
利用するのは困難である。また、ターゲット21から放出
される２次電子４はＳＥＭ（Scanning Electron Micros
cope）と同様にターゲット表面の観察に利用できるが、
この２次電子電流は加工している各層での変化が乏し
く、これを加工モニタに使用することは不可能である。When the processing depth is monitored by detecting the secondary ions, the beam diameter of 1 μm or less cannot be obtained because the beam current needs to be increased. For this reason, L that requires a beam diameter of 1 μm or less
A high-brightness ion source such as a liquid metal ion source is used for processing SI and the like. However, in order to narrow the beam finely, the beam current must be made small, and the ion beam device for LSI processing cannot obtain a sufficient amount of secondary ions to identify the composition on each surface being processed, It is difficult to use this as a processing monitor. The secondary electrons 4 emitted from the target 21 are SEM (Scanning Electron Micros
It can be used to observe the target surface in the same way as
This secondary electron current has little change in each layer being processed, and it is impossible to use this as a processing monitor.
従来の集束イオンビーム加工装置はＳＩＭＳ（Secondar
y Ion micro Spectroscopy）等の分析を目的としたもの
で加工の終点位置を検出する必要はなかった。従って、
加工深さをモニタすることについては配慮していない。
しかし、近年、半導体集積回路の多層配線技術が進歩
し、イオンビーム加工装置を半導体集積回路の加工に使
用するようになってきている。このため、イオンビーム
加工において、加工深さを精度良くモニタできる技術が
必要となってきている。Conventional focused ion beam processing equipment is SIMS (Secondar
y Ion micro Spectroscopy) was the purpose of the analysis, and it was not necessary to detect the end point position of processing. Therefore,
No consideration is given to monitoring the machining depth.
However, in recent years, the multilayer wiring technology for semiconductor integrated circuits has advanced, and ion beam processing equipment has come to be used for processing semiconductor integrated circuits. Therefore, in the ion beam processing, a technique capable of accurately monitoring the processing depth has been required.
加工深さをモニタするには、加工するＬＳＩの各層にお
いて顕著な変化を示す量を検出する必要がある。その量
として、入射するイオンビームの電荷がSi基板までリー
クして流れ出る電流が、電流の各層での変化，検出の容
易さを考えた上で最も適当である。ただし、単純に上記
リーク電流を検出するだけではうまくゆかない。表層で
は比較的電流変化が大きく有効であるが、下層になると
加工穴側壁の影響が現れ、各層での電流変化が不明瞭と
なるためである。In order to monitor the processing depth, it is necessary to detect the amount showing a remarkable change in each layer of the LSI to be processed. As the amount, the current that leaks out of the charge of the incident ion beam to the Si substrate and flows out is the most appropriate in consideration of the change of current in each layer and the ease of detection. However, simply detecting the leak current does not work. This is because the change in current is relatively large and effective in the surface layer, but in the lower layer, the influence of the side wall of the processed hole appears and the change in current in each layer becomes unclear.
例えば第７図に示すように、絶縁物であるSiO2層とAl層
との複数層でなる被加工物をイオンビーム１で加工して
いる際中に、Si基板11から流れ出るリーク電流を電流計
８で検出すると、リーク電流は第８図に示すように変化
する。尚、第７図の記号Ａ〜Ｆは第８図横軸のＡ〜Ｆに
対応している。第８図に示す実験例では、下層での変化
が比較的明瞭で、ある程度Ｄ点，Ｅ点がリーク電流の変
化から類推できるが、被加工物がもう少し複雑になる
と、Ｄ点，Ｅ点が不明瞭となり、加工精度が低下してし
まい、再現性も低下してしまう。For example, as shown in FIG. 7, when a workpiece composed of a plurality of SiO 2 layers and Al layers, which are insulators, is being processed by the ion beam 1, the leakage current flowing out from the Si substrate 11 is When detected by the total 8, the leak current changes as shown in FIG. The symbols A to F in FIG. 7 correspond to A to F on the horizontal axis in FIG. In the experimental example shown in FIG. 8, the changes in the lower layer are relatively clear, and points D and E can be inferred from changes in the leakage current to some extent, but when the workpiece becomes a little more complicated, points D and E It becomes unclear, the processing accuracy is lowered, and the reproducibility is also lowered.
本発明の目的は、加工深さのモニタを精度良くかつ再現
性良く行なえるイオンビーム加工方法を提供することに
ある。It is an object of the present invention to provide an ion beam processing method capable of monitoring the processing depth with high accuracy and reproducibility.
上記目的は、導電体層と非導電体層との複数層でなる被
加工物に、イオン源から射出されるイオンビーム集束，
偏向させて照射し、前記被加工物を深さ方向に加工する
イオンビーム加工方法において、被加工物の加工領域を
所要深さ毎に段階的に加工し、各所要深さの加工を行な
った後に、前記加工領域内の局所領域をイオンビームで
走査し、該走査初期時に前記被加工物から流れ出る電流
を検出し、該電流の変化から加工の終点を検出すること
により、達成される。The above-mentioned object is to focus an ion beam emitted from an ion source on a workpiece including a plurality of layers of a conductor layer and a non-conductor layer,
In the ion beam processing method of deflecting and irradiating and processing the work piece in the depth direction, the work area of the work piece is processed step by step for each required depth, and processing for each required depth is performed. After that, it is achieved by scanning a local area in the processing area with an ion beam, detecting a current flowing out of the workpiece at the beginning of the scanning, and detecting an end point of the processing from a change in the current.
局所領域の加工を行なう際のイオンビームの走査によ
り、被加工物から流れ出る電流は、該加工層が導電体層
であるか非導電体層であるかによりその変動の仕方が異
なる。例えば、被加工物の基板から流れ出るリーク電流
を検出する場合、非導電体層の局所領域加工においては
リーク電流は略一定でほとんど変動せず、導電体層の局
所領域加工ではイオンビームの走査に従ってリーク電流
が変動する。このリーク電流の変動領域が、被加工物の
深さ方向の加工中に何度現われたかにより、何層目の導
電体層を加工したかがわかる。加工領域内の局所領域を
加工したときのリーク電流を検出するため、加工穴側壁
の悪影響を避けることができる。The current flowing out from the workpiece due to the scanning of the ion beam when processing the local region varies depending on whether the processing layer is a conductive layer or a non-conductive layer. For example, when detecting the leak current flowing out from the substrate of the workpiece, the leak current is substantially constant and hardly fluctuates in the local region processing of the non-conductive layer, and the ion current scanning is performed in the local region processing of the conductive layer. The leak current fluctuates. It is possible to know how many conductor layers have been processed depending on how many times the region where the leakage current fluctuates appears during processing in the depth direction of the workpiece. Since the leak current when the local area in the processing area is processed is detected, the adverse effect of the side wall of the processing hole can be avoided.
以下、本発明の一実施例を第１図乃至第５図を参照して
説明する。An embodiment of the present invention will be described below with reference to FIGS. 1 to 5.
第３図は、Si基板11上に積層されたAl層34，35，36とSi
O2層37，38，39，40の複数層を示している。本実施例で
は、第６図で説明したイオンビーム加工装置を使用し
て、３層目のＡｌ層36を切断する場合を説明する。FIG. 3 shows Al layers 34, 35, 36 and Si laminated on the Si substrate 11.
A plurality of O 2 layers 37, 38, 39 and 40 are shown. In the present embodiment, a case will be described in which the ion beam processing apparatus described in FIG. 6 is used to cut the third Al layer 36.
まず、集束イオンビームを最初数10μｍ角の広い領域で
走査し、ターゲットである被加工物表面から発生する２
次電子を検出し、表面の凹凸像を観察して加工すべき領
域を設定する。次に、走査領域を加工領域に合致させ、
その領域でのイオン照射密度を上げ加工を行う。First, a focused ion beam is first scanned over a wide area of several tens of μm square, and is generated from the surface of the workpiece as a target.
The secondary electrons are detected, and the surface irregularity image is observed to set the region to be processed. Next, match the scanning area to the processing area,
Processing is performed by increasing the ion irradiation density in that region.
この加工は、先ず、第５図(a)に示すように、加工領域
５の全面走査をｎ回、例えば25回行なう。次に、加工領
域５の領域端部を除く領域内において、第５図(b)に示
すように、局所領域６を設定し、この局所領域６を１回
あるいは数回全面走査する。このとき、基板11（第１
図）を設置している図示しないホルダから流れ出るリー
ク電流Isを電流計８で計測する。尚、第１図は、加工が
進み、第２層目のSiO2層38を加工する際に行なう局所領
域走査の状態を示したものである。局所領域６をイオン
ビーム走査すると、局所領域６部分が先にスパッタ加工
されてしまう。そこで、リーク電流計測後は、局所領域
６の加工領域５内での凹みをなくすため、第５図(e)に
示すように、残りの非局所領域12を局所領域走査数と同
数回イオンビームで走査して加工する。その後、再び、
加工領域５の全面走査をｎ回行ない、局所領域６のイオ
ンビーム走査とリーク電流の計測、非局所領域12の加工
を行なう。この様な動作を繰り返し行ない、被加工物を
所要深さ毎に段階的に加工しながら、各所要深さの加工
後に局所領域のイオンビーム走査に基づくリーク電流値
を計測する。For this processing, first, as shown in FIG. 5A, the entire surface of the processing area 5 is scanned n times, for example 25 times. Next, a local region 6 is set in the region other than the region end of the processed region 5 as shown in FIG. 5B, and the local region 6 is scanned once or several times over the entire surface. At this time, the substrate 11 (first
A leak current Is flowing out from a holder (not shown) in which (Fig.) Is installed is measured by an ammeter 8. Incidentally, FIG. 1 shows a state of local area scanning performed when the second SiO 2 layer 38 is processed as the processing progresses. When the local area 6 is scanned with an ion beam, the local area 6 is sputtered first. Therefore, after the leak current measurement, in order to eliminate the depression of the local region 6 in the processed region 5, as shown in FIG. 5 (e), the remaining non-local region 12 is subjected to the same number of ion beam scans as the number of local region scans. Scan to process. Then again
The entire surface of the processing region 5 is scanned n times, the ion beam scanning of the local region 6 and the leak current are measured, and the non-local region 12 is processed. By repeating such operations, the workpiece is processed stepwise for each required depth, and the leakage current value based on the ion beam scanning of the local region is measured after the processing of each required depth.
上述した局所領域６及び加工領域５の設定は、デフレク
タ20（第６図）にかける電圧を制御することにより行な
う。また、非局所領域12のみを第５図(c)に示す様に加
工する場合は、局所領域６にイオンビームが入るとき、
イオンビームをイオンビーム光学系の途中で遮断する。The local area 6 and the processing area 5 are set by controlling the voltage applied to the deflector 20 (FIG. 6). When only the non-local area 12 is processed as shown in FIG. 5 (c), when the ion beam enters the local area 6,
The ion beam is cut off in the middle of the ion beam optical system.
第２図は、加工層がAlの場合あるいはSiO2の場合の夫々
のリーク電流の違いを示す図である。局所領域６を例え
ば10分間連続加工すると、リーク電流は夫々第２図右側
グラフの様に変化する。両グラフは、全体的に見れば似
た傾向を示すが、イオンビーム照射開始時の数走査、第
２図のグラフでは加工開始30秒程の間では著しく異な
る。つまり、加工面がAl層の場合には照射開始からリー
ク電流がビーム走査に同期して振動する。一方、加工面
がSiO2層の場合には照射開始から数走査まではリーク電
流は一定で、変化しない。従って、第３図に示す被加工
物を基板11まで加工するとき、上述した様に所要深さ毎
に段階的に加工した後にリーク電流Isを計測して得られ
るリーク電流は第４図に示す様になる。第４図の記号ａ
〜ｈは、第３図の深さａ〜ｈに対応している。このた
め、第３層目のAl層36を切断加工するときは、リーク電
流の振幅が大きくなる山が３つ過ぎたことを検出するこ
とで、加工終了位置を検出できる。FIG. 2 is a diagram showing a difference in leak current when the processed layer is Al or SiO 2 . When the local region 6 is continuously processed for 10 minutes, for example, the leak current changes as shown in the graph on the right side of FIG. Although both graphs show similar tendencies as a whole, they are remarkably different between several scans at the start of ion beam irradiation and about 30 seconds after the start of processing in the graph of FIG. That is, when the processed surface is an Al layer, the leak current oscillates in synchronization with beam scanning from the start of irradiation. On the other hand, when the processed surface is the SiO 2 layer, the leak current is constant and does not change from the start of irradiation to several scans. Therefore, when the workpiece shown in FIG. 3 is processed up to the substrate 11, the leakage current Is obtained by measuring the leakage current Is after stepwise processing for each required depth as shown above is shown in FIG. Like Symbol a in FIG.
~ H corresponds to the depths ah in Fig. 3. Therefore, when the third Al layer 36 is cut and processed, the processing end position can be detected by detecting that there are three peaks where the amplitude of the leakage current becomes large.
尚、加工領域の走査回数は必要とする深さ方向の精度か
ら設定する。例えば、ビーム電流0.7nA，加工面積35μ
ｍ２の場合、平均加工速度は0.09μｍ／min である。し
たがって、加工終点の精度を0.2μｍとし、１全面走査
の走査時間を５secとすると、25回が加工領域の走査回
数となる。つまり、25回走査後１回加工モニタ用の走査
を行なうことによって0.2μｍごとの加工モニタが可能
となる。また、実施例の説明では、局所領域の位置を加
工領域中央部の１箇所固定位置としたが、加工領域内の
加工穴端部に牴触しない範囲で、複数個所設定し、リー
ク電流測定ごとに移動させると、加工領域内での加工不
均一がさらに低減する。The number of scans of the processing area is set based on the required accuracy in the depth direction. For example, beam current 0.7nA, processing area 35μ
In the case of m 2 , the average processing speed is 0.09 μm / min. Therefore, if the accuracy of the processing end point is 0.2 μm and the scanning time for one whole surface scanning is 5 sec, 25 times is the number of times of scanning the processing area. In other words, the processing monitor can be performed every 0.2 μm by performing the processing monitor scan once after 25 times of scanning. Further, in the description of the embodiment, the position of the local region is fixed at one position in the central portion of the processing region, but a plurality of positions are set within a range where the end portion of the processing hole in the processing region is not touched, and leakage current is measured every time. When moved to, the processing non-uniformity in the processing area is further reduced.
更にまた、被加工物から流れ出るモニタ用の電流は、実
施例で説明したリーク電流が好適であるが、２次電子を
使用することも可能である。尚、導電体層としてAl，非
導電体層としてSiO2を用いた例について説明したが、本
発明はこれ等の材料に限定されるものでないことはいう
までもない。Furthermore, the leak current described in the embodiment is suitable as the monitor current flowing out from the workpiece, but secondary electrons can also be used. Although an example in which Al is used as the conductor layer and SiO 2 is used as the non-conductor layer has been described, it goes without saying that the present invention is not limited to these materials.
本発明によれば、加工中に加工面が導電体層であるが非
導電体層であるかが明瞭に判別できるため、加工深さを
精度良く制御することができる。制御精度は加工時にお
けるビーム電流，加工面積によって変化するが、原理的
に１走査ごとのモニタも可能であり、0.1μｍ精度の制
御も可能となる。According to the present invention, it is possible to clearly determine whether the processed surface is a conductor layer or a non-conductor layer during processing, so that the processing depth can be accurately controlled. The control accuracy changes depending on the beam current and processing area during processing, but in principle it is also possible to monitor each scan and control with 0.1 μm accuracy.
第１図は本発明の一実施例に係るイオンビーム加工方法
で加工中の被加工物の斜視図、第２図は本発明の原理説
明図、第３図は複数層（被加工物）の縦構造図、第４図
は本発明の一実施例方法により得られたリーク電流の変
化グラフ、第５図(a)，(b)，(c)は本発明の１実施例に
係るビーム走査方法説明図、第６図は集束イオンビーム
装置の構成図、第７図は加工中のＬＳＩの断面図、第８
図はリーク電流の変化グラフである。 １……イオンビーム、５……加工領域、６……局所領
域、８……電流計、11……基板、12……非局所領域、3
4，35，36……Al層、37，38，39，40……SiO2層。FIG. 1 is a perspective view of a work piece being processed by an ion beam processing method according to an embodiment of the present invention, FIG. 2 is an explanatory view of the principle of the present invention, and FIG. 3 shows a plurality of layers (work piece). FIG. 4 is a vertical structural diagram, FIG. 4 is a graph showing changes in leakage current obtained by the method of one embodiment of the present invention, and FIGS. 5 (a), (b), and (c) are beam scans according to one embodiment of the present invention. Method explanatory drawing, FIG. 6 is a block diagram of the focused ion beam apparatus, FIG. 7 is a cross-sectional view of the LSI being processed, and FIG.
The figure is a graph of changes in leakage current. 1 ... Ion beam, 5 ... Processing area, 6 ... Local area, 8 ... Ammeter, 11 ... Substrate, 12 ... Non-local area, 3
4,35,36 ... Al layer, 37,38,39,40 ... SiO 2 layer.
Claims (4)
加工物に、イオン源から射出されるイオンビームを集束
・偏向させて照射し、前記被加工物を深さ方向に加工す
るイオンビーム加工方法において、被加工物の加工領域
を所要深さ毎に段階的に加工し、各所要深さの加工を行
なった後に、前記加工領域内の局所領域をイオンビーム
で走査し、該走査初期時に被加工物から流れ出る電流を
検出し、該電流の変化状態から加工の終点位置を検出す
ることを特徴とするイオンビーム加工方法。1. A workpiece comprising a plurality of conductive layers and non-conductive layers is focused and deflected by an ion beam emitted from an ion source to irradiate the workpiece in the depth direction. In the ion beam processing method of processing, the processing area of the workpiece is processed step by step at each required depth, and after processing each required depth, the local area in the processing area is scanned with an ion beam. An ion beam processing method characterized in that a current flowing out of a workpiece at the beginning of the scanning is detected, and a processing end point position is detected from a change state of the current.
前記電流を検出した後、該イオンビーム走査数と同数の
イオンビーム走査を前記加工領域内かつ前記局所領域外
の非局所領域で行ない、その後前記所要深さの加工を行
なうことを特徴とする特許請求の範囲第１項記載のイオ
ンビーム加工方法。2. After detecting the current by ion beam scanning to the local region, the same number of ion beam scans as the number of ion beam scans are performed in a non-local region inside the processing region and outside the local region, and thereafter. The ion beam processing method according to claim 1, wherein the processing is performed to the required depth.
なう毎に前記加工領域内で移動させることを特徴とする
特許請求の範囲第１項または第２項記載のイオンビーム
加工方法。3. The ion beam processing method according to claim 1, wherein the local region is moved within the processing region each time the processing of the required depth is performed.
物の基板から流れ出るリーク電流であることを特徴とす
る特許請求の範囲第１項乃至第３項のいずれかに記載の
イオンビーム加工方法。4. The ion beam processing according to claim 1, wherein the current flowing out from the work piece is a leak current flowing out from the substrate of the work piece. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5255186A JPH0620059B2 (en) | 1986-03-12 | 1986-03-12 | Ion beam processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5255186A JPH0620059B2 (en) | 1986-03-12 | 1986-03-12 | Ion beam processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62210625A JPS62210625A (en) | 1987-09-16 |
| JPH0620059B2 true JPH0620059B2 (en) | 1994-03-16 |
Family
ID=12917937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5255186A Expired - Lifetime JPH0620059B2 (en) | 1986-03-12 | 1986-03-12 | Ion beam processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0620059B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2569139B2 (en) * | 1988-08-24 | 1997-01-08 | 株式会社日立製作所 | Ion beam processing method |
-
1986
- 1986-03-12 JP JP5255186A patent/JPH0620059B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62210625A (en) | 1987-09-16 |
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