JPH06188296A - Detection of semiconductor single crystal defect - Google Patents

Detection of semiconductor single crystal defect

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Publication number
JPH06188296A
JPH06188296A JP35552492A JP35552492A JPH06188296A JP H06188296 A JPH06188296 A JP H06188296A JP 35552492 A JP35552492 A JP 35552492A JP 35552492 A JP35552492 A JP 35552492A JP H06188296 A JPH06188296 A JP H06188296A
Authority
JP
Japan
Prior art keywords
single crystal
oxygen precipitate
wafer
semiconductor single
hydrofluoric acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP35552492A
Other languages
Japanese (ja)
Other versions
JP2848176B2 (en
Inventor
Shiro Yoshino
史朗 芳野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
Original Assignee
Komatsu Electronic Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Electronic Metals Co Ltd filed Critical Komatsu Electronic Metals Co Ltd
Priority to JP35552492A priority Critical patent/JP2848176B2/en
Publication of JPH06188296A publication Critical patent/JPH06188296A/en
Application granted granted Critical
Publication of JP2848176B2 publication Critical patent/JP2848176B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To detect solely an oxygen precipitate by cutting a single crystal of semiconductor into a wafer, dipping the wafer into hydrofluoric acid to make a tangible oxygen precipitate, and microscopically observing the tangible oxygen precipitate. CONSTITUTION:A single crystal of silicon is pulled up by the Czochraski method. Then, the pulled up single crystal of silicon is sliced and the sliced silicon wafer is immersed in a 50% aqueous solution of hydrofluoric acid for 15 minutes. After rinsing in pure water and drying, the silicon wafer surface can be observed by an electron microscope, whereby an oxygen precipitate, stacking fault, dislocation, and the like can be distinguished. Also, size of only the oxygen precipitate without including a distorted field can be measured, and information on only the outermost surface of the single crystal of semiconductor can be obtained.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】この発明はシリコンその他の半導
体単結晶の欠陥を検出する方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for detecting defects in silicon or other semiconductor single crystals.

【０００２】[0002]

【従来の技術】半導体単結晶の欠陥検出方法としては、
例えば特開平４−１９２３４５号公報に開示されたもの
があり、これはチョクラルスキー法等により引き上げた
半導体単結晶をウエーハに切断し、該ウエーハをフッ酸
と硝酸との混合液に浸漬し、更にＫ2Ｃｒ2Ｏ7とフッ酸
と水との混合液に浸漬して、ウエーハ表面に現れたさざ
波模様の個数を計数する方法である。2. Description of the Related Art As a method for detecting defects in a semiconductor single crystal,
For example, there is one disclosed in JP-A-4-192345, which cuts a semiconductor single crystal pulled by the Czochralski method or the like into wafers and immerses the wafers in a mixed liquid of hydrofluoric acid and nitric acid, Further, it is a method of immersing in a mixed solution of K 2 Cr 2 O 7 , hydrofluoric acid and water and counting the number of ripple patterns appearing on the surface of the wafer.

【０００３】[0003]

【発明が解決しようとする課題】上記従来の方法では、
フッ酸と硝酸との混合液、あるいはＫ2Ｃｒ2Ｏ7とフッ
酸と水との混合液をエッチング液として用いており、こ
の方法によると酸素析出物だけでなく、周辺の歪場、転
移ループ、積層欠陥などもエッチングされる。したがっ
て酸素析出物が隣接して複数存在するときにも全体とし
て大きな食像が１個だけ得れらるおそれがあり、また酸
素析出物がないときにも食像が得られるおそれがあり、
いずれの場合にも酸素析出物だけの正確な観察を図るこ
とができなかった。したがって本発明は純粋に酸素析出
物だけを検出することができる半導体単結晶の欠陥検出
方法を提供することを目的とする。SUMMARY OF THE INVENTION In the above conventional method,
A mixed solution of hydrofluoric acid and nitric acid or a mixed solution of K 2 Cr 2 O 7 and hydrofluoric acid and water is used as an etching solution. According to this method, not only oxygen precipitates but also strain fields and transitions in the periphery are used. Loops, stacking faults, etc. are also etched. Therefore, even if there are a plurality of oxygen precipitates adjacent to each other, there is a possibility that only one large eclipse image may be obtained as a whole, and there may be a eclipse image even when there are no oxygen precipitates.
In either case, accurate observation of only oxygen precipitates could not be achieved. Therefore, it is an object of the present invention to provide a method for detecting defects in a semiconductor single crystal, which is capable of purely detecting only oxygen precipitates.

【０００４】[0004]

【課題を解決するための手段】本発明は、半導体単結晶
をウエーハに切断し、該ウエーハをフッ酸に浸漬して酸
素析出物を顕在化し、該顕在化した酸素析出物を顕微鏡
観察することによって、上記目的を達成したものであ
る。According to the present invention, a semiconductor single crystal is cut into a wafer, the wafer is immersed in hydrofluoric acid to reveal oxygen precipitates, and the exposed oxygen precipitates are observed under a microscope. Thus, the above-mentioned object is achieved.

【０００５】[0005]

【作用】フッ酸はＳｉＯxの構造を持つ欠陥のみの食像
を表わすから、上記発明方法によれば純粋に酸素析出物
だけを検出することができる。Since hydrofluoric acid shows an erosion image of only defects having the structure of SiO x , only the oxygen precipitates can be detected purely by the method of the present invention.

【０００６】[0006]

【実施例】以下に本発明の実施例について説明する。チ
ョクラルスキー法によってシリコン単結晶を引き上げ、
引き上げたシリコン単結晶をスライスし、スライスした
シリコンウエーハをフッ酸５０％水溶液に１５分間浸漬
し、その後純水による洗浄と乾燥をした後、シリコンウ
エーハ表面を電子顕微鏡で観察した。図１はこの観察結
果の一例を示す倍率１０万倍の写真である。他方図２は
従来例を示し、この従来例はＷｒｉｇｈｔエッチング液
を用いたものであり、倍率は３万倍である。図２に示さ
れているように、従来のエッチング液を用いたときには
酸素析出物の周囲の歪場、転移等もエッチングされてい
るが、図１に示す本実施例によれば、酸素析出物のみが
検出されていることが解る。EXAMPLES Examples of the present invention will be described below. Pulling a silicon single crystal by the Czochralski method,
The pulled silicon single crystal was sliced, the sliced silicon wafer was dipped in a 50% aqueous solution of hydrofluoric acid for 15 minutes, washed with pure water and dried, and then the surface of the silicon wafer was observed with an electron microscope. FIG. 1 is a photograph showing an example of this observation result at a magnification of 100,000 times. On the other hand, FIG. 2 shows a conventional example, which uses a Wright etching solution and has a magnification of 30,000 times. As shown in FIG. 2, strain fields, dislocations, etc. around the oxygen precipitates are also etched when the conventional etching solution is used, but according to the present embodiment shown in FIG. It turns out that only one is detected.

【０００７】[0007]

【発明の効果】本発明はフッ酸をエッチング液として用
いて半導体単結晶の欠陥を検出する方法であるから、第
１に酸素析出物と、積層欠陥、転移等を区別することが
できる。第２に、歪場を含まず、酸素析出物のみのサイ
ズを計測することができる。第３に、半導体単結晶の最
表面のみの情報を得ることができる。第４に半導体単結
晶の表面の荒れが少ないため、微小な酸素析出物を高感
度で検出することができる。Since the present invention is a method for detecting defects in a semiconductor single crystal by using hydrofluoric acid as an etching solution, first, oxygen precipitates can be distinguished from stacking faults, dislocations and the like. Secondly, it is possible to measure the size of only oxygen precipitates without including a strain field. Thirdly, information on only the outermost surface of the semiconductor single crystal can be obtained. Fourthly, since the surface of the semiconductor single crystal is less rough, minute oxygen precipitates can be detected with high sensitivity.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の一実施例によって検出された結晶構造
の表面を示す１０万倍電子顕微鏡写真FIG. 1 is a 100,000 times electron micrograph showing a surface of a crystal structure detected according to an embodiment of the present invention.

【図２】従来例によって検出された結晶構造の表面を示
す３万倍電子顕微鏡写真FIG. 2 is a 30,000 times electron micrograph showing the surface of a crystal structure detected by a conventional example.

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】半導体単結晶をウエーハに切断し、該ウエ
ーハをフッ酸に浸漬して酸素析出物を顕在化し、該顕在
化した酸素析出物を顕微鏡観察する半導体単結晶の欠陥
検出方法。1. A method for detecting defects in a semiconductor single crystal, which comprises cutting a semiconductor single crystal into a wafer, immersing the wafer in hydrofluoric acid to reveal oxygen precipitates, and observing the manifested oxygen precipitates under a microscope.
JP35552492A 1992-12-17 1992-12-17 Semiconductor single crystal defect detection method Expired - Lifetime JP2848176B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP35552492A JP2848176B2 (en) 1992-12-17 1992-12-17 Semiconductor single crystal defect detection method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35552492A JP2848176B2 (en) 1992-12-17 1992-12-17 Semiconductor single crystal defect detection method

Publications (2)

Publication Number Publication Date
JPH06188296A true JPH06188296A (en) 1994-07-08
JP2848176B2 JP2848176B2 (en) 1999-01-20

Family

ID=18444440

Family Applications (1)

Application Number Title Priority Date Filing Date
JP35552492A Expired - Lifetime JP2848176B2 (en) 1992-12-17 1992-12-17 Semiconductor single crystal defect detection method

Country Status (1)

Country Link
JP (1) JP2848176B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100398303B1 (en) * 2000-06-26 2003-09-19 미쯔비시 마테리알 폴리실리콘 가부시끼가이샤 Evalution method for polycrystalline silicon
CN100373573C (en) * 2005-01-06 2008-03-05 中芯国际集成电路制造(上海)有限公司 Method for affirming fatal fault in deep-sub-micrometer semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103965914B (en) * 2013-01-25 2016-06-08 上海华虹宏力半导体制造有限公司 Etching NPN doped region shape looks are to carry out the lost efficacy composition checked and the method for inspection

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100398303B1 (en) * 2000-06-26 2003-09-19 미쯔비시 마테리알 폴리실리콘 가부시끼가이샤 Evalution method for polycrystalline silicon
CN100373573C (en) * 2005-01-06 2008-03-05 中芯国际集成电路制造(上海)有限公司 Method for affirming fatal fault in deep-sub-micrometer semiconductor device

Also Published As

Publication number Publication date
JP2848176B2 (en) 1999-01-20

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