JPH06186580A - Liquid crystal display device - Google Patents

Liquid crystal display device

Info

Publication number
JPH06186580A
JPH06186580A JP33749292A JP33749292A JPH06186580A JP H06186580 A JPH06186580 A JP H06186580A JP 33749292 A JP33749292 A JP 33749292A JP 33749292 A JP33749292 A JP 33749292A JP H06186580 A JPH06186580 A JP H06186580A
Authority
JP
Japan
Prior art keywords
liquid crystal
insulating film
display device
crystal display
driver circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP33749292A
Other languages
Japanese (ja)
Inventor
Kiyobumi Kitawada
清文 北和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP33749292A priority Critical patent/JPH06186580A/en
Publication of JPH06186580A publication Critical patent/JPH06186580A/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To miniaturize a device and to suppress the deterioration of liquid crystal by separating source wiring and a picture element electrode in separate layers by using transparent organic insulating film as second inter-layer insulating film, peeling the sealing area lower part of the organic film, and arranging a driver circuit in the sealing area lower part. CONSTITUTION:A picture element transistor 313 is formed on a substrate 301. The driver circuit 304 consisting of an integrated circuit of transistors is arranged at the middle part of both a sealing area 303 and a picture element part, and those element substrates are covered with the transparent organic insulating film 318 of polyimide, etc. A picture element electrode 314 of ITO, etc., is formed on the transparent organic insulating film 318, and is connected to the drain electrode of the picture element transistor 313 via a contact hole. Also, the driver circuit 304 is arranged in the lower part of the sealing area 303, and the transparent organic insulating film 318 on the upper part of the circuit is peeled. Furthermore, a part extended from the picture element part to the sealing area 303 is covered with oriented film 312.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、アクティブマトリック
ス型液晶表示装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix type liquid crystal display device.

【0002】[0002]

【従来の技術】従来の液晶表示装置の一例を図1を用い
て説明する。
2. Description of the Related Art An example of a conventional liquid crystal display device will be described with reference to FIG.

【0003】この図は液晶表示装置の外観図である。This figure is an external view of a liquid crystal display device.

【0004】ガラス、石英等の基板101上に画素エリ
ア105を図1(a)のように配置し、この画素部の周
辺に薄膜トランジスタの集積回路からなるドライバー回
路103、104を配置している。対向基板102は、
画素エリア105とドライバー回路103、104の間
にその縁が位置するように、紫外線硬化樹脂等のシール
材106により基板101に固定されている。また対向
基板の透明電極の電位は導電性接着剤によって基板側の
パッド107を通してコモン電位に固定されている。
A pixel area 105 is arranged on a substrate 101 made of glass, quartz or the like as shown in FIG. 1A, and driver circuits 103 and 104 composed of thin film transistor integrated circuits are arranged around the pixel portion. The counter substrate 102 is
The pixel area 105 and the driver circuits 103 and 104 are fixed to the substrate 101 by a sealing material 106 such as an ultraviolet curable resin so that the edge thereof is located between the driver areas 103 and 104. The potential of the transparent electrode of the counter substrate is fixed to the common potential through the pad 107 on the substrate side by the conductive adhesive.

【0005】これは素子基板101と対向基板102の
間に封入されている液晶に水分等が流入するのをできる
だけ避けるためであり、更にドライバー回路、或いはそ
の周辺には電源と同じ電位持つ配線があるのでそれによ
って液晶に電界をかけないためである。
This is to prevent water and the like from flowing into the liquid crystal sealed between the element substrate 101 and the counter substrate 102 as much as possible, and further, a wiring having the same potential as the power source is provided in the driver circuit or its periphery. This is because an electric field is not applied to the liquid crystal due to this.

【0006】この図1のA−A’の部分での構造断面図
を図1(b)に示した。基板101上に多結晶シリコン
等による薄膜トランジスタ113が形成されている。薄
膜トランジスタ、ソース配線、画素電極114は第2層
間絶縁膜120に覆われてはいるが、画素電極114の
上部は開孔されている。このトランジスタのゲート電極
は最終的に終端部116でコンタクトホールを介して配
線117に接続しており、配線117は対向基板端部よ
り外側に形成されたトランジスタの集積回路からなるド
ライバー回路103と接続している。
FIG. 1 (b) is a sectional view of the structure taken along the line AA 'in FIG. A thin film transistor 113 made of polycrystalline silicon or the like is formed on the substrate 101. The thin film transistor, the source line, and the pixel electrode 114 are covered with the second interlayer insulating film 120, but the upper portion of the pixel electrode 114 is opened. The gate electrode of this transistor is finally connected to the wiring 117 at the terminal end portion 116 through the contact hole, and the wiring 117 is connected to the driver circuit 103 formed of an integrated circuit of the transistor formed outside the end portion of the counter substrate. is doing.

【0007】対向基板102には透明電極111が全面
に形成されており、紫外線硬化樹脂等のシール材106
により基板に固定されている。基板101、対向基板1
02をポリイミド等の配向膜112で覆っている。
A transparent electrode 111 is formed on the entire surface of the counter substrate 102, and a sealing material 106 such as an ultraviolet curable resin is formed.
It is fixed to the substrate by. Substrate 101, counter substrate 1
02 is covered with an alignment film 112 such as polyimide.

【0008】また図1のB−B’の部分での構造断面図
を図1(c)に示した。基板101上の第1層間絶縁膜
119の上層に配線306が形成されており、これらは
更に酸化シリコン等の第2層間絶縁膜120で覆われて
いるが、パッド107上は開孔してある。この上にポリ
イミド等の配向膜112を塗布してある。このパッド1
07はコモン電位になるように配線されているので、こ
の部分に導電性接着剤118を塗布し、対向基板102
を圧着すると対向基板の対向電極111はこれによりコ
モン電位となる。
Further, FIG. 1C shows a structural sectional view taken along the line BB 'in FIG. Wirings 306 are formed in the upper layer of the first interlayer insulating film 119 on the substrate 101, and these are further covered with a second interlayer insulating film 120 such as silicon oxide, but an opening is formed on the pad 107. . An alignment film 112 of polyimide or the like is applied on this. This pad 1
Since 07 is wired so as to have a common potential, the conductive adhesive 118 is applied to this portion, and the counter substrate 102
When is pressed, the counter electrode 111 of the counter substrate becomes a common potential.

【0009】また図2はこの液晶表示装置の斜視図であ
る。
FIG. 2 is a perspective view of this liquid crystal display device.

【0010】このようにシール205を横切る配線は最
低でもゲート線とソース線の数だけある。
As described above, the number of wirings that cross the seal 205 is at least the number of gate lines and source lines.

【0011】[0011]

【発明が解決しようとする課題】しかしながら従来の技
術では、ドライバー回路は対向基板の外部に配置されて
いるため、パネル組立時にドライバー回路を破損し歩留
まりを下げてしまうことがあった。またドライバー回路
がシールエリア外部に配置されているため装置全体が大
型になってしまっていた。
However, in the prior art, since the driver circuit is arranged outside the counter substrate, the driver circuit may be damaged at the time of panel assembly and the yield may be reduced. In addition, the driver circuit was placed outside the seal area, which made the entire device large.

【0012】[0012]

【課題を解決するための手段】本発明では第2層間絶縁
膜として透明有機絶縁膜を用いソース配線と画素電極を
別層に分離し、更に前記有機膜のシールエリア下部を剥
離し、ドライバー回路はシールエリア下部に配置するこ
とを特徴とする。
According to the present invention, a transparent organic insulating film is used as a second interlayer insulating film to separate a source wiring and a pixel electrode into separate layers, and a lower portion of a sealing area of the organic film is peeled off to form a driver circuit. Is located below the seal area.

【0013】[0013]

【実施例】以下実施例に基づいて本発明を詳しく説明す
る。
EXAMPLES The present invention will be described in detail based on the following examples.

【0014】図3の(a)は本発明による液晶表示装置
の外観図である。基板上に形成された画素エリアの外週
で、且つシールエリア下部にドライバー回路を配置して
ある。
FIG. 3A is an external view of a liquid crystal display device according to the present invention. A driver circuit is arranged outside the pixel area formed on the substrate and below the seal area.

【0015】図3の(b)は図3の(a)のA−A’に
於ける構造断面図である。基板101上に画素トランジ
スタ102が形成されている。シールエリアと画素部の
中程にはトランジスタの集積回路からなるドライバー回
路が配置されており、これら素子基板をポリイミド等の
透明有機絶縁膜によって覆っている。この透明有機絶縁
膜の上にITO等の画素電極が形成されており、画素ト
ランジスタのドレイン電極とコンタクトホールを介して
接続されている。またドライバー回路はシールエリア下
部に配置されており、回路上部の透明有機絶縁膜は剥離
されている。画素部からシールエリアに渡って配向膜に
覆われている。
FIG. 3B is a structural sectional view taken along the line AA 'in FIG. The pixel transistor 102 is formed on the substrate 101. A driver circuit composed of an integrated circuit of a transistor is arranged in the middle of the seal area and the pixel portion, and these element substrates are covered with a transparent organic insulating film such as polyimide. A pixel electrode such as ITO is formed on the transparent organic insulating film and is connected to the drain electrode of the pixel transistor through a contact hole. Further, the driver circuit is arranged below the seal area, and the transparent organic insulating film above the circuit is peeled off. The alignment film covers the pixel area and the seal area.

【0016】この時入射光は対向基板側から液晶表示装
置を透過することになるが、対向基板にはブラックマト
リックス等の遮光層があり、ドライバー回路には照射さ
れない。
At this time, incident light is transmitted through the liquid crystal display device from the counter substrate side, but the counter substrate has a light shielding layer such as a black matrix and is not irradiated to the driver circuit.

【0017】また図3の(c)は図3の(a)のB−
B’に於ける構造断面図である。
Further, FIG. 3 (c) shows B- of FIG. 3 (a).
It is a structure sectional view in B '.

【0018】対向基板の対向電極はドライバー回路付近
に形成されたコモン電位を持つ電極に付けられた導電性
接着剤319により接続され、コモン電位に固定され
る。
The counter electrode of the counter substrate is connected by a conductive adhesive 319 attached to an electrode having a common potential formed in the vicinity of the driver circuit and fixed at the common potential.

【0019】この場合の液晶表示装置の全体は図4に示
したように、ドライバー回路をシールエリア下部に配置
したことによりD1及びD2の幅の分だけ小型となって
いる。
As shown in FIG. 4, the entire liquid crystal display device in this case is reduced in size by the width of D1 and D2 by disposing the driver circuit below the seal area.

【0020】またドライバー回路をシールエリア下部に
配置したため必然的にシールの幅は広くなるが、水分等
の液晶への流入を抑えることができる。
Further, since the driver circuit is arranged below the seal area, the width of the seal is inevitably widened, but it is possible to suppress the inflow of water or the like into the liquid crystal.

【0021】[0021]

【発明の効果】本発明の液晶表示装置の構造をとること
により、次に述べる効果がある。
The structure of the liquid crystal display device of the present invention has the following effects.

【0022】ドライバー回路がシールエリア下部に配置
されたことで液晶表示装置全体をこれまでのものより小
型にすることができる。
Since the driver circuit is arranged below the seal area, the entire liquid crystal display device can be made smaller than the conventional one.

【0023】ドライバー回路をシールエリア下部に配置
したために、シールの幅は従来技術による液晶表示装置
に比べ、広くなる。そのため水分が内部の液晶に流入し
難く、液晶の劣化が少ない。
Since the driver circuit is arranged below the seal area, the width of the seal becomes wider than that of the conventional liquid crystal display device. Therefore, it is difficult for moisture to flow into the internal liquid crystal, and the liquid crystal is less deteriorated.

【0024】対向基板側から光を入射するとき対向基板
の遮光層によってドライバー回路に照射される光が少な
く消費電力の増加を防ぐことができる。
When light is incident from the counter substrate side, the light shielding layer of the counter substrate causes less light to be emitted to the driver circuit, so that increase in power consumption can be prevented.

【0025】セルギャップをより精度良く均一に保つこ
とができる。
The cell gap can be maintained more accurately and uniformly.

【0026】またドライバー回路はシールエリアの下部
に配置されたことで、組立工程での物理的損傷によるド
ライバー回路の破壊が少なく歩留まりが上がる。
Further, since the driver circuit is arranged below the seal area, the driver circuit is less destroyed due to physical damage in the assembly process, and the yield is increased.

【図面の簡単な説明】[Brief description of drawings]

【図1】 従来の技術による液晶表示装置の構造を示す
断面図。
FIG. 1 is a sectional view showing a structure of a conventional liquid crystal display device.

【図2】 従来技術による液晶表示装置の斜視図。FIG. 2 is a perspective view of a conventional liquid crystal display device.

【図3】 本発明による液晶表示装置の構造を示す断面
図。
FIG. 3 is a sectional view showing a structure of a liquid crystal display device according to the present invention.

【図4】 本発明による液晶表示装置の斜視図。FIG. 4 is a perspective view of a liquid crystal display device according to the present invention.

【符号の説明】[Explanation of symbols]

101、201、301、401・・・素子基板 102、202、302、402・・・対向基板 113、207、313、407・・・画素駆動トラン
ジスタ 116、316・・・画素駆動トランジスタのゲート電
極、及びゲート配線 106、205、303、405・・・シールエリア 103、104、203、204、304、403、4
04・・・ドライバー回路 117、317・・・配線 105・・・画素エリア 114、314・・・画素電極 111、311・・・対向電極 118、319・・・導電性樹脂 318・・・透明有機絶縁膜 107、305・・・コモン電位を持つパッド 110、310・・・ブラックマトリックス 115、315・・・画素電極とのコンタクトホール 112、312・・・配向膜 119・・・第1層間絶縁膜 120・・・第2層間絶縁膜 108、206、306、406・・・外部接続端子
101, 201, 301, 401 ... Element substrate 102, 202, 302, 402 ... Counter substrate 113, 207, 313, 407 ... Pixel driving transistor 116, 316 ... Pixel driving transistor gate electrode, And gate wiring 106, 205, 303, 405 ... Seal area 103, 104, 203, 204, 304, 403, 4
04 ... Driver circuit 117, 317 ... Wiring 105 ... Pixel area 114, 314 ... Pixel electrode 111, 311 ... Counter electrode 118, 319 ... Conductive resin 318 ... Transparent organic Insulating films 107, 305 ... Pads having common potential 110, 310 ... Black matrix 115, 315 ... Contact holes with pixel electrodes 112, 312 ... Alignment film 119 ... First interlayer insulating film 120 ... Second interlayer insulating film 108, 206, 306, 406 ... External connection terminal

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 G09G 3/36 7319−5G H01L 29/784 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI Technical display location G09G 3/36 7319-5G H01L 29/784

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】液晶表示装置の基板において、画素駆動薄
膜トランジスタが有機膜に覆われており、画素電極が前
記有機膜上に形成されることを特徴とする液晶表示装
置。
1. A liquid crystal display device, wherein a pixel driving thin film transistor is covered with an organic film on a substrate of the liquid crystal display device, and a pixel electrode is formed on the organic film.
【請求項2】シールエリアの前記有機膜を剥離すること
を特徴とする請求項1に記載の液晶表示装置。
2. The liquid crystal display device according to claim 1, wherein the organic film in the seal area is peeled off.
【請求項3】薄膜トランジスタの集積回路から成る画素
トランジスタ駆動回路をシールエリア下部に配置したこ
とを特徴とする請求項2に記載の液晶表示装置。
3. The liquid crystal display device according to claim 2, wherein a pixel transistor drive circuit including an integrated circuit of thin film transistors is arranged below the seal area.
JP33749292A 1992-12-17 1992-12-17 Liquid crystal display device Pending JPH06186580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33749292A JPH06186580A (en) 1992-12-17 1992-12-17 Liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33749292A JPH06186580A (en) 1992-12-17 1992-12-17 Liquid crystal display device

Publications (1)

Publication Number Publication Date
JPH06186580A true JPH06186580A (en) 1994-07-08

Family

ID=18309163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33749292A Pending JPH06186580A (en) 1992-12-17 1992-12-17 Liquid crystal display device

Country Status (1)

Country Link
JP (1) JPH06186580A (en)

Cited By (20)

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EP0762184A1 (en) * 1995-08-11 1997-03-12 Sharp Kabushiki Kaisha Transmission type liquid crystal display device and method for fabricating the same
US5798812A (en) * 1995-09-28 1998-08-25 Sharp Kabushiki Kaisha Active matrix substrate and display device using the same with extending protrusions between gate and source line terminals
WO1998043130A1 (en) * 1997-03-26 1998-10-01 Seiko Epson Corporation Liquid crystal device, electrooptic device, and projection display device using the same
US5995178A (en) * 1995-10-16 1999-11-30 Sharp Kabushiki Kaisha Active matrix liquid crystal panel and method for repairing defect therein
US6072559A (en) * 1996-03-12 2000-06-06 Sharp Kabushiki Kaisha Active matrix display device having defect repair extension line beneath each pixel
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US6204907B1 (en) * 1995-09-27 2001-03-20 Sharp Kabushiki Kaisha Liquid crystal display device and manufacturing method thereof
US6236444B1 (en) 1993-09-20 2001-05-22 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal device with drive circuits on both substrates
US6567147B1 (en) 1997-03-27 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method of fabricating the same
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US7023518B1 (en) 1995-12-19 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-conductive material or a weakly conductive material applied to a side edge of a substrate and a method of fabricating the same
JP2006514320A (en) * 2003-01-30 2006-04-27 サムスン エレクトロニクス カンパニー リミテッド Liquid crystal display
US7046312B2 (en) 1995-12-19 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Active matrix liquid crystal display and method of fabricating same
KR100567690B1 (en) * 1997-04-04 2006-05-25 산요덴키가부시키가이샤 Liquid crystal display device
JP2006189777A (en) * 2004-12-31 2006-07-20 Lg Philips Lcd Co Ltd Liquid crystal display device and method of manufacturing the same
JP2009059854A (en) * 2007-08-31 2009-03-19 Epson Imaging Devices Corp Light-receiving device, electro-optical device including light-receiving device, and electronic equipment
JP2010122706A (en) * 2005-10-14 2010-06-03 Seiko Epson Corp Display and electronic apparatus
US8624885B2 (en) 2006-07-03 2014-01-07 Japan Display West Inc. Electro-optical device and electronic apparatus

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US6236444B1 (en) 1993-09-20 2001-05-22 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal device with drive circuits on both substrates
US7525629B2 (en) 1993-09-20 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device comprising drive circuits that include thin film transistors formed on both substrates
US5953084A (en) * 1995-08-11 1999-09-14 Sharp Kabushiki Kaisha Transmission type liquid crystal display device having capacitance ratio of 10% or less and charging rate difference of 0.6% or less
US6052162A (en) * 1995-08-11 2000-04-18 Sharp Kabushiki Kaisha Transmission type liquid crystal display device with connecting electrode and pixel electrode connected via contact hole through interlayer insulating film and method for fabricating
US6097452A (en) * 1995-08-11 2000-08-01 Sharp Kabushiki Kaishi Transmission type liquid crystal display having an organic interlayer elements film between pixel electrodes and switching
EP0762184A1 (en) * 1995-08-11 1997-03-12 Sharp Kabushiki Kaisha Transmission type liquid crystal display device and method for fabricating the same
US6195138B1 (en) 1995-08-11 2001-02-27 Sharp Kabushiki Kaisha Transmission type liquid crystal display having an organic interlayer elements film between pixel electrodes and switching
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US6433851B2 (en) 1995-08-11 2002-08-13 Sharp Kabushiki Kaisha Transmission type liquid crystal display having a transparent colorless organic interlayer insulating film between pixel electrodes and switching
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US6204907B1 (en) * 1995-09-27 2001-03-20 Sharp Kabushiki Kaisha Liquid crystal display device and manufacturing method thereof
US5798812A (en) * 1995-09-28 1998-08-25 Sharp Kabushiki Kaisha Active matrix substrate and display device using the same with extending protrusions between gate and source line terminals
US5995178A (en) * 1995-10-16 1999-11-30 Sharp Kabushiki Kaisha Active matrix liquid crystal panel and method for repairing defect therein
US7046312B2 (en) 1995-12-19 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Active matrix liquid crystal display and method of fabricating same
US7023518B1 (en) 1995-12-19 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-conductive material or a weakly conductive material applied to a side edge of a substrate and a method of fabricating the same
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