JPH06181191A - Cleaning method for semiconductor device - Google Patents
Cleaning method for semiconductor deviceInfo
- Publication number
- JPH06181191A JPH06181191A JP33445192A JP33445192A JPH06181191A JP H06181191 A JPH06181191 A JP H06181191A JP 33445192 A JP33445192 A JP 33445192A JP 33445192 A JP33445192 A JP 33445192A JP H06181191 A JPH06181191 A JP H06181191A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- cleaning
- ashing
- nitrogen
- plasma etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、アッシング残渣を洗浄
して除去する半導体装置の洗浄方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device cleaning method for cleaning and removing ashing residues.
【０００２】[0002]
【従来の技術】通常の半導体装置の製造工程において
は、いくつかの工程で種々の洗浄が行われる。ここでア
ルミニウム（Ａｌ）配線の形成過程における洗浄方法を
例にして説明する。一般的に半導体装置上のＡｌ配線
は、Ａｌ合金をスパッタリングして形成される。Ａｌ配
線した半導体装置上にレジストを成膜し、このレジスト
にパターニングを施した後にドライエッチングして半導
体装置上を微細加工する。この後に半導体装置上のレジ
ストを、酸素プラズマによりアッシング（灰化）して除
去する。しかし、アッシングではレジストを完全に除去
できない。このため、主として有機物質からなるアッシ
ング残渣が半導体装置上に残留する。このアッシング残
渣を溶融するため半導体装置に薬液による洗浄を行い、
この薬液および溶融したアッシング残渣を半導体装置か
ら洗い流すため水による洗浄を行う。この半導体装置を
乾燥した後に次の工程へ搬送する。2. Description of the Related Art In a typical semiconductor device manufacturing process, various cleaning processes are performed. Here, a cleaning method in the process of forming aluminum (Al) wiring will be described as an example. Generally, Al wiring on a semiconductor device is formed by sputtering an Al alloy. A resist is formed on a semiconductor device having Al wiring, and after patterning the resist, dry etching is performed to finely process the semiconductor device. After that, the resist on the semiconductor device is removed by ashing (ashing) with oxygen plasma. However, the ashing cannot completely remove the resist. Therefore, the ashing residue mainly composed of the organic substance remains on the semiconductor device. In order to melt this ashing residue, the semiconductor device is cleaned with a chemical solution,
This chemical solution and the melted ashing residue are washed from the semiconductor device with water. After this semiconductor device is dried, it is transported to the next step.
【０００３】[0003]
【発明が解決しようとする課題】上記従来の技術におい
て、アッシング残渣は主として有機物質からなるもので
あるため、有機物質を融解するアミン系の洗浄液をアッ
シング残渣の洗浄に一般に用いる。しかし、アミン系の
洗浄液は水と混合すると強アルカリとなる性質がある。
このため、アミン系の洗浄液を半導体装置のアッシング
残渣の洗浄に用いてそのまま水洗浄を行うと強アルカリ
により半導体装置のＡｌ配線が腐食することがある。こ
れによりＡｌ配線の抵抗が増大したり、または半導体装
置が多層間配線であれば、上層と下層の配線層の接続部
であるスルーホールの抵抗増大などの不良現象を引き起
こすことがあった。これを防止するため、アミン系の洗
浄液により洗浄したそのままの半導体装置に、イソプロ
ピルアルコールやジメチルスルホキシドなどによりリン
スを施し、このリンスした半導体装置に水洗浄を行う。
このように半導体装置のアッシング残渣を除去する薬液
洗浄は、アミン系の洗浄液を用いての洗浄およびこの洗
浄液を洗い流すリンスを行わなければならないため、工
数が増えてしまいスループットが劣ってしまうという問
題がある。In the above conventional technique, since the ashing residue is mainly composed of an organic substance, an amine-based cleaning liquid that melts the organic substance is generally used for cleaning the ashing residue. However, the amine-based cleaning liquid has a property of becoming a strong alkali when mixed with water.
Therefore, if the amine-based cleaning liquid is used for cleaning the ashing residue of the semiconductor device and the water cleaning is performed as it is, the Al wiring of the semiconductor device may be corroded by the strong alkali. As a result, the resistance of the Al wiring may increase, or if the semiconductor device is a multi-layer wiring, a defect phenomenon such as an increase in resistance of a through hole that is a connecting portion between upper and lower wiring layers may occur. In order to prevent this, the semiconductor device as it is, which has been cleaned with an amine-based cleaning liquid, is rinsed with isopropyl alcohol, dimethyl sulfoxide, or the like, and the rinsed semiconductor device is rinsed with water.
As described above, in the chemical cleaning for removing the ashing residue of the semiconductor device, it is necessary to perform cleaning using an amine-based cleaning solution and rinsing to rinse out the cleaning solution, so that the number of steps is increased and the throughput is deteriorated. is there.
【０００４】本発明は、上記事情に鑑み、アッシング残
渣を除去する薬液洗浄において、その洗浄の工数を減少
して半導体装置製造のスループットを向上する半導体装
置の洗浄方法を提供することを目的とする。In view of the above circumstances, it is an object of the present invention to provide a method of cleaning a semiconductor device in which the number of cleaning steps is reduced and the throughput of semiconductor device manufacturing is improved in chemical cleaning for removing ashing residues. .
【０００５】[0005]
【課題を解決するための手段】上記目的を達成するため
の本発明の半導体装置の洗浄方法は、アッシング残渣を
薬液洗浄および水洗浄して除去し、半導体装置を乾燥す
る洗浄工程の一部あるいはすべてを非酸化雰囲気中で行
うことを特徴とする。ここに、洗浄工程において用いる
薬液および水が含む溶存酸素が少ないことが好ましい。In order to achieve the above object, a method of cleaning a semiconductor device according to the present invention comprises a cleaning step for removing an ashing residue by chemical cleaning and water cleaning, and a part of a cleaning step for drying the semiconductor device. All are performed in a non-oxidizing atmosphere. Here, it is preferable that the chemical solution and water used in the washing step contain little dissolved oxygen.
【０００６】[0006]
【作用】本発明の半導体装置の洗浄方法は、アミン系の
洗浄液と水が混合すると強アルカリが発生する、カソー
ド（陰極）側の反応であると考えられる Ｏ2 ＋４Ｈ+ ＋４ｅ- →２Ｈ2 Ｏ という反応を抑制するため、アミン系の洗浄液と水が混
合する薬液洗浄および水洗浄を行い、半導体装置を乾燥
する洗浄工程の一部あるいはすべてを非酸化雰囲気中で
行うものである。In the method for cleaning a semiconductor device of the present invention, a reaction on the cathode (cathode) side, which is considered to be a reaction on the cathode (cathode) side, in which a strong alkali is generated when an amine-based cleaning liquid and water are mixed is considered to be O 2 + 4H + + 4e − → 2H 2 O. In order to suppress the above reaction, chemical cleaning and water cleaning in which an amine-based cleaning liquid and water are mixed are performed, and a part or all of the cleaning step of drying the semiconductor device is performed in a non-oxidizing atmosphere.
【０００７】ここに、洗浄工程において用いる薬液を、
酸素を含まない不活性ガスなどによりバブリングして薬
液の含む溶存酸素を減少させ、強アルカリの発生をより
減少することが好ましい。Here, the chemical solution used in the cleaning step is
It is preferable to reduce the dissolved oxygen contained in the chemical solution by bubbling with an inert gas containing no oxygen to further reduce the generation of strong alkali.
【０００８】[0008]
【実施例】以下、本発明の実施例について説明する。 〔第１実施例〕図１は、本発明に係る第１実施例の手順
を示すフローチャートである。半導体装置上にアルミニ
ウム（Ａｌ）‐シリコン（Ｓｉ）‐銅（Ｃｕ）系合金を
スパッタリング法を用いて成膜する。このＡｌ‐Ｓｉ‐
Ｃｕ系合金にレジストパターニングを行う。このレジス
トパターニングした半導体装置をプラズマエッチング装
置内に入れ、この半導体装置にドライエッチングする。
このエッチングした半導体装置のレジストを除去するた
め、同一装置内で真空搬送で接続されているアッシング
室に搬送後、Ｏ2 ＋ＣＨＦ3 から成るガスを注入してス
テージ温度：２４℃でアッシングする。この後、プラズ
マエッチング装置にウエハを設置し内部を窒素置換して
窒素雰囲気中（本発明にいう非酸化雰囲気中）にし、窒
素を流しつつ窒素バブリング処理を施した９０℃のアミ
ン系薬液を３００ｒｐｍで１０分間噴射して半導体装置
を有機洗浄（本発明にいう薬液洗浄）する。その後プラ
ズマエッチング装置内を窒素でパージしつつ半導体装置
を純水で洗浄（本発明にいう水洗浄）し、乾燥する。EXAMPLES Examples of the present invention will be described below. [First Embodiment] FIG. 1 is a flow chart showing the procedure of the first embodiment according to the present invention. An aluminum (Al) -silicon (Si) -copper (Cu) -based alloy is formed on a semiconductor device by a sputtering method. This Al-Si-
Resist patterning is performed on the Cu-based alloy. The semiconductor device patterned with the resist is put into a plasma etching apparatus, and the semiconductor device is dry-etched.
In order to remove the resist of the etched semiconductor device, after carrying to the ashing chamber connected by vacuum carrying in the same device, a gas consisting of O 2 + CHF 3 is injected and ashing is performed at a stage temperature of 24 ° C. After that, the wafer was placed in a plasma etching apparatus, and the inside was replaced with nitrogen to be in a nitrogen atmosphere (in the non-oxidizing atmosphere referred to in the present invention), and a nitrogen bubbling treatment was performed at 90 ° C. with an amine chemical solution at 300 rpm. For 10 minutes to perform organic cleaning of the semiconductor device (chemical solution cleaning referred to in the present invention). Thereafter, while purging the inside of the plasma etching apparatus with nitrogen, the semiconductor device is washed with pure water (water washing referred to in the present invention) and dried.
【０００９】図２は、第１実施例において製造したＡｌ
配線の一例の断面図（ａ）、比較のため、大気雰囲気に
おいて洗浄して製造したＡｌ配線の一例の断面図（ｂ）
である。図２（ａ）に示すように本発明により製造した
半導体装置には、局部腐食（図２（ｂ）参照）が発生せ
ず、Ａｌ表面２から延びる、半導体装置の組織の境界を
示す粒界１を観測したのみである。一方、図２（ｂ）に
示すように大気雰囲気において洗浄して製造した半導体
装置には、そのＡｌ表面２にアミン系薬液と純水が大気
雰囲気において反応して発生した強アルカリ（図示せ
ず）により局部腐食３が発生した。この局部腐食３は、
その底にＣｕを主成分とする核４を有するものがあり、
かつ粒界１が発生しているものもある。局部腐食３は、
その最大径は２μｍ〜３μｍ，平均径０．７μｍであ
り、１×１０7 箇所／ｃｍ2 の頻度で発生した。FIG. 2 shows the Al produced in the first embodiment.
Sectional view (a) of an example of wiring, sectional view (b) of an example of Al wiring manufactured by cleaning in an air atmosphere for comparison.
Is. As shown in FIG. 2A, in the semiconductor device manufactured according to the present invention, local corrosion (see FIG. 2B) does not occur, and a grain boundary extending from the Al surface 2 and showing a boundary of the structure of the semiconductor device. Only 1 was observed. On the other hand, as shown in FIG. 2B, a semiconductor device manufactured by cleaning in an air atmosphere has a strong alkali (not shown) generated on the Al surface 2 by reaction of an amine-based chemical solution and pure water in the air atmosphere. ) Caused local corrosion 3. This local corrosion 3
Some have a core 4 mainly composed of Cu at the bottom,
In addition, some grain boundaries 1 are generated. Local corrosion 3 is
The maximum diameter was 2 μm to 3 μm, the average diameter was 0.7 μm, and the frequency was 1 × 10 7 points / cm 2 .
【００１０】〔第２実施例〕第２実施例もその手順は図
１に示すものと同一である。尚、上記第１実施例と同一
の構成の要素と同一の要素には、同一の番号を付して示
し、重複説明は省略する。半導体装置の上に６００ｎｍ
の熱酸化膜を形成した後、スパッタリング法を用いてア
ルミニウム（Ａｌ）‐シリコン（Ｓｉ）を厚さ１μｍに
成膜する。このＡｌ‐Ｓｉにレジストパターンニングを
行う。このレジストパターニングした半導体装置をプラ
ズマエッチング装置内に入れ、この半導体装置をＢＣｌ
3 ＋Ｃｌ2のガス系でマイクロ波プラズマエッチングを
行い、同一装置内のアッシング室でステージ温度２５０
℃、ガス系Ｏ2 ＋ＣＨ3 ＯＨでアッシングを行う。この
後アッシング残渣を剥離するため、プラズマエッチング
装置内を窒素置換して窒素雰囲気中（本発明にいう非酸
化雰囲気中）にし、窒素バブリングした１００℃のアミ
ン系薬液に半導体装置を１００分噴射する（本発明にい
う薬液洗浄）。プラズマエッチング装置内を窒素雰囲気
中のまま半導体装置に窒素バブリングした純水で２０分
間洗浄（本発明にいう水洗浄）する。この後プラズマエ
ッチング装置内を窒素パージしつつ半導体装置をスピン
ドライヤで乾燥する。[Second Embodiment] The procedure of the second embodiment is the same as that shown in FIG. The same elements as those of the first embodiment described above are designated by the same reference numerals, and duplicate description will be omitted. 600nm on top of semiconductor device
After forming the thermal oxide film of 1), aluminum (Al) -silicon (Si) is formed to a thickness of 1 μm by using the sputtering method. Resist patterning is performed on this Al-Si. The semiconductor device patterned with the resist is put into a plasma etching apparatus, and the semiconductor device is put into BCl.
Microwave plasma etching is performed with a gas system of 3 + Cl 2 and the stage temperature is set to 250 in the ashing chamber in the same equipment.
Ashing is carried out at 0 ° C. with a gas system O 2 + CH 3 OH. After that, in order to remove the ashing residue, the inside of the plasma etching apparatus is replaced with nitrogen to be in a nitrogen atmosphere (in the non-oxidizing atmosphere referred to in the present invention), and the semiconductor device is injected for 100 minutes into the nitrogen-blubbered 100 ° C. amine-based chemical solution. (Cleaning with a chemical solution according to the present invention). While the inside of the plasma etching apparatus is in a nitrogen atmosphere, the semiconductor device is cleaned with pure water with nitrogen bubbling for 20 minutes (water cleaning referred to in the present invention). After that, the semiconductor device is dried with a spin dryer while purging the inside of the plasma etching apparatus with nitrogen.
【００１１】図３は、第２実施例において製造した半導
体装置のＡｌ配線の一例の斜視図（ａ）、比較のため、
大気雰囲気において洗浄して製造した半導体装置のＡｌ
配線の一例の斜視図（ｂ）である。図３（ａ）に示すよ
うに本発明により製造した半導体装置には、酸化膜５の
上に設けられたＡｌ配線６のＡｌ表面２に粒界１のみが
認められる。そして、この粒界１には腐食は認められな
い。一方、図３（ｂ）に示すように大気雰囲気において
洗浄して製造した半導体装置には、酸化膜５の上に設け
られたＡｌ配線６のＡｌ表面２に粒界腐食が発生した。
この粒界腐食は、アミン系薬液と純水が大気雰囲気にお
いて反応して発生した強アルカリ（図示せず）により、
著しく腐食されたものである。FIG. 3 is a perspective view of an example of Al wiring of the semiconductor device manufactured in the second embodiment (a), for comparison,
Al of semiconductor device manufactured by cleaning in air atmosphere
It is a perspective view (b) of an example of wiring. As shown in FIG. 3A, in the semiconductor device manufactured according to the present invention, only the grain boundaries 1 are recognized on the Al surface 2 of the Al wiring 6 provided on the oxide film 5. Corrosion is not recognized in this grain boundary 1. On the other hand, as shown in FIG. 3B, in the semiconductor device manufactured by cleaning in the air atmosphere, the intergranular corrosion occurred on the Al surface 2 of the Al wiring 6 provided on the oxide film 5.
This intergranular corrosion is caused by a strong alkali (not shown) generated by the reaction of the amine chemical liquid and pure water in the atmosphere.
It was significantly corroded.
【００１２】ここに、非酸化雰囲気中にするために用い
る気体としては、本実施例に用いた窒素に限らず、アル
ゴン（Ａｒ）、二酸化炭素（ＣＯ2 ）、および水素（Ｈ
2 ）等、又はこれらの混合ガスであっても良いことは勿
論である。The gas used for the non-oxidizing atmosphere is not limited to the nitrogen used in this embodiment, but may be argon (Ar), carbon dioxide (CO 2 ), and hydrogen (H).
Of course, 2 ) or the like, or a mixed gas thereof may be used.
【００１３】[0013]
【発明の効果】以上、説明したように本発明の半導体装
置の洗浄方法は、薬液洗浄および水洗浄を行い、半導体
装置を乾燥する洗浄工程の一部あるいはすべてを非酸化
雰囲気中で行うものであるため、アミン系の洗浄液と水
が混合して強アルカリが発生することにより引き起こさ
れるＡｌの局部腐食が防止される。これにより、アミン
系の洗浄液が付着したままの半導体装置を水洗浄しても
Ａｌ配線が腐食することがない。このため、半導体装置
にリンスする必要がなく、半導体装置製造のスループッ
トが向上する。As described above, in the semiconductor device cleaning method of the present invention, part or all of the cleaning step of performing chemical cleaning and water cleaning and drying the semiconductor device is performed in a non-oxidizing atmosphere. Therefore, local corrosion of Al caused by the generation of a strong alkali by mixing the amine-based cleaning liquid and water is prevented. As a result, the Al wiring will not be corroded even if the semiconductor device with the amine-based cleaning liquid attached thereto is washed with water. Therefore, it is not necessary to rinse the semiconductor device, and the throughput of manufacturing the semiconductor device is improved.
【図１】本発明に係る第１実施例の手順を示すフローチ
ャートである。FIG. 1 is a flow chart showing a procedure of a first embodiment according to the present invention.
【図２】第１実施例において製造した半導体装置の一例
の断面図（ａ）、比較のため、大気雰囲気において洗浄
して製造した半導体装置の一例の断面図（ｂ）である。FIG. 2 is a sectional view (a) of an example of a semiconductor device manufactured in a first example, and a sectional view (b) of an example of a semiconductor device manufactured by cleaning in an air atmosphere for comparison.
【図３】第２実施例において製造した半導体装置のＡｌ
配線の一例の斜視図（ａ）、比較のため、大気雰囲気に
おいて洗浄して製造した半導体装置のＡｌ配線の一例の
斜視図（ｂ）である。FIG. 3 is an Al of the semiconductor device manufactured in the second embodiment.
FIG. 3A is a perspective view of an example of wiring, and FIG. 3B is a perspective view of an example of Al wiring of a semiconductor device manufactured by cleaning in an air atmosphere for comparison.
１ 粒界 ２ Ａｌ表面 ３ 局部腐食 ４ 核 ５ 酸化膜 ６ Ａｌ配線 1 Grain boundary 2 Al surface 3 Local corrosion 4 Nucleus 5 Oxide film 6 Al wiring
Claims (1)
浄して除去し、半導体装置を乾燥する洗浄工程の一部あ
るいはすべてを非酸化雰囲気中で行うことを特徴とする
半導体装置の洗浄方法。1. A method of cleaning a semiconductor device, characterized in that part or all of the cleaning step of removing the ashing residue by chemical cleaning and water cleaning and drying the semiconductor device is performed in a non-oxidizing atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33445192A JPH06181191A (en) | 1992-12-15 | 1992-12-15 | Cleaning method for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33445192A JPH06181191A (en) | 1992-12-15 | 1992-12-15 | Cleaning method for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06181191A true JPH06181191A (en) | 1994-06-28 |
Family
ID=18277537
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33445192A Withdrawn JPH06181191A (en) | 1992-12-15 | 1992-12-15 | Cleaning method for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06181191A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1143498A2 (en) * | 2000-04-02 | 2001-10-10 | Axcelis Technologies, Inc. | Post etch photoresist and residue removal process |
| US6358329B1 (en) | 1999-01-07 | 2002-03-19 | Mitsubishi Denki Kabushiki Kaisha | Resist residue removal apparatus and method |
| KR20030052168A (en) * | 2001-12-20 | 2003-06-26 | 동부전자 주식회사 | Method for metal line patterning of semiconductor device |
| KR100398996B1 (en) * | 2000-06-15 | 2003-09-22 | 가오가부시끼가이샤 | Method of manufacturing semiconductor device |
| KR100825769B1 (en) * | 2002-02-21 | 2008-04-29 | 삼성전자주식회사 | On-chip reference current and voltage generating circuits |
-
1992
- 1992-12-15 JP JP33445192A patent/JPH06181191A/en not_active Withdrawn
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6358329B1 (en) | 1999-01-07 | 2002-03-19 | Mitsubishi Denki Kabushiki Kaisha | Resist residue removal apparatus and method |
| EP1143498A2 (en) * | 2000-04-02 | 2001-10-10 | Axcelis Technologies, Inc. | Post etch photoresist and residue removal process |
| EP1143498A3 (en) * | 2000-04-02 | 2003-10-22 | Axcelis Technologies, Inc. | Post etch photoresist and residue removal process |
| KR100398996B1 (en) * | 2000-06-15 | 2003-09-22 | 가오가부시끼가이샤 | Method of manufacturing semiconductor device |
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| KR20030052168A (en) * | 2001-12-20 | 2003-06-26 | 동부전자 주식회사 | Method for metal line patterning of semiconductor device |
| KR100825769B1 (en) * | 2002-02-21 | 2008-04-29 | 삼성전자주식회사 | On-chip reference current and voltage generating circuits |
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