JPH06177432A - Light-emitting diode lamp and its manufacture - Google Patents
Light-emitting diode lamp and its manufactureInfo
- Publication number
- JPH06177432A JPH06177432A JP35087992A JP35087992A JPH06177432A JP H06177432 A JPH06177432 A JP H06177432A JP 35087992 A JP35087992 A JP 35087992A JP 35087992 A JP35087992 A JP 35087992A JP H06177432 A JPH06177432 A JP H06177432A
- Authority
- JP
- Japan
- Prior art keywords
- light
- emitting diode
- light emitting
- diode lamp
- mold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
Landscapes
- Led Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、発光ダイオード素子が
封止された透光性のモールド部からリード端子が導出さ
れた発光ダイオードランプに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode lamp in which lead terminals are led out from a light-transmissive mold portion in which a light emitting diode element is sealed.
【０００２】[0002]
【従来の技術】従来の発光ダイオードランプの構成を図
５を参照して説明する。一対のリード端子１ａ，１ｂの
うち、一方のリード端子１ａの先端部に発光ダイオード
素子２が固着されており、この発光ダイオード素子２と
他方のリード端子１ｂとが金属細線３を介して接続され
ている。発光ダイオード素子２が組み込まれたリード端
子１ａ，１ｂの先端部分は、光散乱剤４を混練した透光
性樹脂からなるドーム状のモールド部５で封止されてい
る。発光ダイオード素子２から照射された光は、モール
ド部５内の光散乱剤４によって散乱されながら、モール
ド部５のレンズ作用により収束されて外部へ放出され
る。2. Description of the Related Art The structure of a conventional light emitting diode lamp will be described with reference to FIG. Of the pair of lead terminals 1a and 1b, the light emitting diode element 2 is fixed to the tip of one of the lead terminals 1a, and the light emitting diode element 2 and the other lead terminal 1b are connected via a thin metal wire 3. ing. The tip portions of the lead terminals 1a and 1b in which the light emitting diode element 2 is incorporated are sealed with a dome-shaped mold portion 5 made of a translucent resin in which the light scattering agent 4 is kneaded. The light emitted from the light emitting diode element 2 is scattered by the light-scattering agent 4 in the mold part 5 and is converged by the lens action of the mold part 5 to be emitted to the outside.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上述し
た従来の発光ダイオードランプは、モールド部５内に光
散乱剤４を混練しているため、次のような問題点があ
る。 （１）モールド部５の注型時に、透光性樹脂に光散乱剤
４を混練しなければならないので、手間がかかる。 （２）発光ダイオード素子２から照射された光は、モー
ルド部５から出射されるまでの光路中、光散乱剤４によ
って常に散乱されて拡がり、モールド部５の前面から取
り出されない光が相当量あるので、ランプの光度が低下
する。 （３）光散乱剤４を混入することにより、モールド部５
のガラス転移温度が若干低下する。 （４）透光性樹脂に光散乱剤４を混練した後、注型され
るまでに時間が経過すると樹脂内の光散乱剤４が沈澱す
るので、その経過時間の長短に応じて、モールド部５内
に混入される光散乱剤の割合が変化し、品質にバラツキ
が生じやすい。However, the above-mentioned conventional light emitting diode lamp has the following problems because the light scattering agent 4 is kneaded in the mold portion 5. (1) Since it is necessary to knead the light-scattering agent 4 with the light-transmissive resin when casting the mold portion 5, it is troublesome. (2) The light emitted from the light emitting diode element 2 is always scattered and spread by the light scattering agent 4 in the optical path until it is emitted from the mold part 5, and a considerable amount of light is not extracted from the front surface of the mold part 5. As a result, the luminous intensity of the lamp is reduced. (3) By mixing the light scattering agent 4, the mold portion 5
The glass transition temperature of is slightly lowered. (4) After the light-scattering agent 4 is kneaded with the light-transmissive resin, the light-scattering agent 4 in the resin precipitates after a certain time elapses before being cast. The ratio of the light-scattering agent mixed in 5 changes, and the quality tends to vary.
【０００４】本発明は、このような事情に鑑みてなされ
たものであって、製造工程を煩雑化することなく、ま
た、安定した光散乱効果を得ることができる発光ダイオ
ードランプおよびその製造方法を提供することを目的と
している。The present invention has been made in view of the above circumstances, and provides a light emitting diode lamp and a method of manufacturing the same which can obtain a stable light scattering effect without complicating the manufacturing process. It is intended to be provided.
【０００５】[0005]
【課題を解決するための手段】本発明は、このような目
的を達成するために、次のような構成をとる。すなわ
ち、請求項１に記載の発明は、発光ダイオード素子が封
止された透光性のモールド部からリード端子が導出され
た発光ダイオードランプにおいて、前記モールド部は光
散乱剤を含有しない透光性樹脂からなり、かつ、前記モ
ールド部の少なくとも発光面は粗面に形成されたもので
ある。The present invention has the following constitution in order to achieve such an object. That is, the invention according to claim 1 is a light-emitting diode lamp in which a lead terminal is led out from a light-transmitting mold part in which a light-emitting diode element is sealed, wherein the mold part does not contain a light-scattering agent. It is made of resin, and at least the light emitting surface of the mold part is formed into a rough surface.
【０００６】請求項２に記載の発明は、発光ダイオード
素子が封止された透光性のモールド部からリード端子が
導出された発光ダイオードランプの製造方法において、
粗面加工された成形型に光散乱剤を含有しない透光性樹
脂を注入することにより前記モールド部を形成するもの
である。According to a second aspect of the present invention, there is provided a method of manufacturing a light emitting diode lamp in which lead terminals are led out from a light-transmissive mold part in which a light emitting diode element is sealed,
The mold part is formed by injecting a light-transmissive resin containing no light-scattering agent into a roughened mold.
【０００７】[0007]
【作用】請求項１に記載の発明によれば、発光ダイオー
ド素子から照射された光は、モールド部の内部では散乱
されずに発光面に至り、粗面に形成された発光面でのみ
散乱されて出射される。According to the invention described in claim 1, the light emitted from the light emitting diode element reaches the light emitting surface without being scattered inside the mold portion, and is scattered only on the light emitting surface formed on the rough surface. Is emitted.
【０００８】請求項２に記載の発明によれば、モールド
部の注型時に、発光面が粗面に形成されるので、発光面
を粗面にするための特別の工程を設ける必要はない。According to the second aspect of the invention, since the light emitting surface is formed to be a rough surface at the time of casting the mold portion, it is not necessary to provide a special step for making the light emitting surface a rough surface.
【０００９】[0009]
【実施例】以下、図面を参照して本発明の一実施例を説
明する。図１は、本発明に係る発光ダイオードランプの
一実施例の斜視図である。従来の発光ダイオードランプ
と同様に、一方のリード端子１ａの先端部に発光ダイオ
ード素子２が固着され、この発光ダイオード素子２と他
方のリード端子１ｂとが金属細線３で接続されている。
発光ダイオード素子２が組み込まれたリード端子１ａ，
１ｂの先端部分は、エポキシ樹脂などの透光性樹脂から
なるドーム状のモールド部１０で封止されている。この
モールド部１０の表面は、粗面に形成されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a perspective view of an embodiment of a light emitting diode lamp according to the present invention. Similar to the conventional light emitting diode lamp, a light emitting diode element 2 is fixed to the tip of one lead terminal 1a, and the light emitting diode element 2 and the other lead terminal 1b are connected by a thin metal wire 3.
A lead terminal 1a in which the light emitting diode element 2 is incorporated,
The tip portion of 1b is sealed with a dome-shaped mold portion 10 made of a translucent resin such as epoxy resin. The surface of the mold part 10 is formed to be a rough surface.
【００１０】図２は、図１に示した発光ダイオードラン
プの製造方法を示している。図中、符号１１はポリプロ
ピレンなどで形成された成形型であり、その内面は粗面
加工されている。この成形型１１内に光散乱剤を含有し
ない透光性エポキシ樹脂を注入するとともに、発光ダイ
オード素子２が組み込まれたリード端子１ａ，１ｂの先
端部を挿入した後、熱硬化させることによりモールド部
１０を形成する。FIG. 2 shows a method of manufacturing the light emitting diode lamp shown in FIG. In the figure, reference numeral 11 is a molding die made of polypropylene or the like, the inner surface of which is roughened. A transparent epoxy resin containing no light-scattering agent is injected into the mold 11, and the tip portions of the lead terminals 1a and 1b in which the light emitting diode element 2 is incorporated are inserted and then heat-cured to mold the mold portion. Form 10.
【００１１】図３を参照して、実施例に係る発光ダイオ
ードランプの作用を説明する。発光ダイオード素子２か
ら照射された光はモールド部１０内を進行するが、モー
ルド部１０を形成する透光性樹脂には光散乱剤が混入し
ていないので、モールド部１０内で散乱することなく、
モールド部１０の表面に達する。モールド部１０の表面
は、粗面加工されているので、この表面で光が散乱され
て出射される。The operation of the light emitting diode lamp according to the embodiment will be described with reference to FIG. The light emitted from the light emitting diode element 2 travels in the mold portion 10, but since the light-scattering agent is not mixed in the translucent resin forming the mold portion 10, it does not scatter in the mold portion 10. ,
The surface of the mold part 10 is reached. Since the surface of the mold portion 10 is roughened, light is scattered and emitted on this surface.
【００１２】上述した実施例では、ドーム状のモールド
部を備えた発光ダイオードランプを例に採って説明した
が、本発明はこれに限定されず、例えば図４に示すよう
な角形形状のモールド部１２や、あるいは円柱形のモー
ルド部など、種々の形態のモールド部を備えた発光ダイ
オードランプに適用することができる。In the above-described embodiment, the light emitting diode lamp provided with the dome-shaped mold portion is described as an example. However, the present invention is not limited to this, and for example, a rectangular mold portion as shown in FIG. The present invention can be applied to light emitting diode lamps having various types of mold parts such as 12 or a cylindrical mold part.
【００１３】また、モールド部の全表面を粗面にする必
要はなく、少なくとも発光面を粗面にすれば足りる。Further, it is not necessary to make the entire surface of the mold portion rough, and it is sufficient if at least the light emitting surface is made rough.
【００１４】[0014]
【発明の効果】以上の説明から明らかなように、請求項
１に記載の発明によれば、次のような効果を奏する。 （１）透光性樹脂に光散乱剤を混練するという手間が省
けるので、製造工程を簡素化することができる。 （２）発光ダイオード素子から照射された光は、モール
ド部内で散乱されないので、ランプの光度を向上するこ
とができる。 （３）光散乱剤を混入しないので、モールド部のガラス
転移温度が低下することがない。 （４）光散乱剤が沈澱して散乱の効果が製品によってば
らつくということがなく、品質が安定する。As is apparent from the above description, the invention described in claim 1 has the following effects. (1) Since the labor of kneading the light-scattering agent with the translucent resin can be omitted, the manufacturing process can be simplified. (2) Since the light emitted from the light emitting diode element is not scattered inside the mold part, the luminous intensity of the lamp can be improved. (3) Since the light scattering agent is not mixed, the glass transition temperature of the mold part does not decrease. (4) The light scattering agent does not precipitate and the scattering effect does not vary depending on the product, and the quality is stable.
【００１５】また、請求項２に記載の発明によれば、モ
ールド部の注型と同時に、モールド表面に粗面を形成す
ることができるので、請求項１に係る発光ダイオードラ
ンプを容易に製造することができる。According to the second aspect of the present invention, since the rough surface can be formed on the mold surface at the same time as the casting of the mold part, the light emitting diode lamp according to the first aspect can be easily manufactured. be able to.
【図１】実施例に係る発光ダイオードランプの要部斜視
図である。FIG. 1 is a perspective view of a main part of a light emitting diode lamp according to an embodiment.
【図２】実施例に係る発光ダイオードランプの製造方法
の説明図である。FIG. 2 is an explanatory view of the method for manufacturing the light emitting diode lamp according to the embodiment.
【図３】実施例に係る発光ダイオードランプの縦断面図
である。FIG. 3 is a vertical cross-sectional view of a light emitting diode lamp according to an embodiment.
【図４】別実施例に係る発光ダイオードランプの要部斜
視図である。FIG. 4 is a perspective view of a main part of a light emitting diode lamp according to another embodiment.
【図５】従来の発光ダイオードランプの縦断面図であ
る。FIG. 5 is a vertical cross-sectional view of a conventional light emitting diode lamp.
１ａ，１ｂ…リード端子 ２…発光ダイオード素子 ３…金属細線 １０，１２…モールド部 １１…成形型 1a, 1b ... Lead terminal 2 ... Light emitting diode element 3 ... Metal thin wire 10, 12 ... Mold part 11 ... Mold
Claims (2)
のモールド部からリード端子が導出された発光ダイオー
ドランプにおいて、前記モールド部は光散乱剤を含有し
ない透光性樹脂からなり、かつ、前記モールド部の少な
くとも発光面は粗面に形成されていることを特徴とする
発光ダイオードランプ。1. A light emitting diode lamp in which a lead terminal is led out from a light-transmissive mold part in which a light-emitting diode element is sealed, wherein the mold part is made of a light-transmissive resin containing no light-scattering agent, and A light emitting diode lamp, wherein at least a light emitting surface of the mold part is formed to be a rough surface.
のモールド部からリード端子が導出された発光ダイオー
ドランプの製造方法において、粗面加工された成形型に
光散乱剤を含有しない透光性樹脂を注入することにより
前記モールド部を形成することを特徴とする発光ダイオ
ードランプの製造方法。2. A method of manufacturing a light-emitting diode lamp in which a lead terminal is led out from a light-transmissive mold part in which a light-emitting diode element is sealed, wherein a roughened surface of a mold does not contain a light-scattering agent. A method for manufacturing a light-emitting diode lamp, characterized in that the mold portion is formed by injecting a photosensitive resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35087992A JPH06177432A (en) | 1992-12-03 | 1992-12-03 | Light-emitting diode lamp and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35087992A JPH06177432A (en) | 1992-12-03 | 1992-12-03 | Light-emitting diode lamp and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06177432A true JPH06177432A (en) | 1994-06-24 |
Family
ID=18413516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35087992A Pending JPH06177432A (en) | 1992-12-03 | 1992-12-03 | Light-emitting diode lamp and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06177432A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001148515A (en) * | 1999-11-22 | 2001-05-29 | Sharp Corp | Light-emitting device, manufacturing method therefor, and electronic equipment mounted with the light- emitting device |
| WO2002025744A1 (en) * | 2000-09-21 | 2002-03-28 | Aixtron Ag | Light-emitting diode comprising a luminous element |
| JP2005251875A (en) * | 2004-03-02 | 2005-09-15 | Toshiba Corp | Semiconductor light emitting device |
| JP2007005733A (en) * | 2005-06-27 | 2007-01-11 | Matsushita Electric Works Ltd | Light-emitting device |
| JP2007066938A (en) * | 2005-08-29 | 2007-03-15 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting device |
| JP2007521641A (en) * | 2003-12-09 | 2007-08-02 | ザ・レジェンツ・オブ・ザ・ユニバーシティ・オブ・カリフォルニア | Highly efficient (B, Al, Ga, In) N-based light emitting diode by surface roughening |
-
1992
- 1992-12-03 JP JP35087992A patent/JPH06177432A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001148515A (en) * | 1999-11-22 | 2001-05-29 | Sharp Corp | Light-emitting device, manufacturing method therefor, and electronic equipment mounted with the light- emitting device |
| WO2002025744A1 (en) * | 2000-09-21 | 2002-03-28 | Aixtron Ag | Light-emitting diode comprising a luminous element |
| JP2007521641A (en) * | 2003-12-09 | 2007-08-02 | ザ・レジェンツ・オブ・ザ・ユニバーシティ・オブ・カリフォルニア | Highly efficient (B, Al, Ga, In) N-based light emitting diode by surface roughening |
| US7704763B2 (en) | 2003-12-09 | 2010-04-27 | The Regents Of The University Of California | Highly efficient group-III nitride based light emitting diodes via fabrication of structures on an N-face surface |
| US8766296B2 (en) | 2003-12-09 | 2014-07-01 | The Regents Of The University Of California | Highly efficient gallium nitride based light emitting diodes via surface roughening |
| US10446714B2 (en) | 2003-12-09 | 2019-10-15 | The Regents Of The University Of California | Highly efficient gallium nitride based light emitting diodes via surface roughening |
| US10985293B2 (en) | 2003-12-09 | 2021-04-20 | The Regents Of The University Of California | Highly efficient gallium nitride based light emitting diodes via surface roughening |
| US11677044B2 (en) | 2003-12-09 | 2023-06-13 | The Regents Of The University Of California | Highly efficient gallium nitride based light emitting diodes via surface roughening |
| JP2005251875A (en) * | 2004-03-02 | 2005-09-15 | Toshiba Corp | Semiconductor light emitting device |
| JP2007005733A (en) * | 2005-06-27 | 2007-01-11 | Matsushita Electric Works Ltd | Light-emitting device |
| JP2007066938A (en) * | 2005-08-29 | 2007-03-15 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting device |
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